WO2013107211A1 - Light-induced cell desorption method and cell culture device therefor - Google Patents

Light-induced cell desorption method and cell culture device therefor Download PDF

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WO2013107211A1
WO2013107211A1 PCT/CN2012/084905 CN2012084905W WO2013107211A1 WO 2013107211 A1 WO2013107211 A1 WO 2013107211A1 CN 2012084905 W CN2012084905 W CN 2012084905W WO 2013107211 A1 WO2013107211 A1 WO 2013107211A1
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cell culture
photosensitive semiconductor
cell
vitro
culture vessel
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程逵
翁文剑
洪逸
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浙江大学
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    • CCHEMISTRY; METALLURGY
    • C12BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12MAPPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
    • C12M25/00Means for supporting, enclosing or fixing the microorganisms, e.g. immunocoatings

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  • the present invention belongs to the field of tissue engineering, and in particular relates to a method of photo-induced cell desorption and a cell culture apparatus used therefor. Background technique
  • In vitro cell culture is an indispensable technology for the research of biomedical technology and biological materials. How to reduce the adverse effects of external uncertainties on cell behavior in in vitro cell culture, enable it to adhere, proliferate, differentiate, and separate from the culture medium when needed, thereby reflecting the response to drugs or materials at the cellular level. Directly affect the development of new drugs and new medical materials.
  • One of the existing desorption methods is to mechanically peel the cells by a blade; the other is to digest the connected cells and the extracellular matrix of the culture substrate and the integrin using a digestive enzyme represented by trypsin to make the cells Get rid of the surface of the substrate.
  • trypsin a digestive enzyme represented by trypsin to make the cells Get rid of the surface of the substrate.
  • the mechanical separation of cells will definitely cause some damage to the cells.
  • the amount and duration of trypsin need to be controlled more precisely. Otherwise, the membrane proteins may be digested at the same time, thereby damaging the cells.
  • ECM itself has certain biological functions, it is also questionable whether cells completely separated from ECM can completely and reliably reflect the effects to be characterized.
  • the present invention provides a method for photocell desorption in cell culture in vitro and a cell culture apparatus therefor, which can minimize damage to cells upon cell desorption.
  • a method for photocell desorption in cell culture in vitro comprising the steps of:
  • the photosensitive semiconductor structure layer is a photosensitive semiconductor film or a photosensitive semiconductor micro/nano dot matrix, wherein the photosensitive semiconductor film has a crystal grain size of 2 to 100 nm and a thickness of 50 nm to 2000 nm, and the semiconductor nanometer in the photosensitive semiconductor micro/nano lattice
  • the density of the dots ranges from 1.0x l 0 1() to lxl 0 12 /cm 2 , and the dot size ranges from 10 to 500 cents;
  • the photosensitive semiconductor is titanium oxide, zinc oxide, tin oxide, iron oxide or zirconium oxide. That is, the photosensitive semiconductor film is a titanium oxide film, a zinc oxide film, a tin oxide film, an iron oxide film or a zirconia film; the photosensitive semiconductor micro-nano lattice is a titanium oxide micro-nano lattice, a zinc oxide micro-nano lattice , tin oxide micro-nano lattice, iron oxide micro-nano lattice or zirconia micro-nano lattice.
  • Ultraviolet light with a wavelength of 300 ⁇ 400 nm is incident from the bottom of the cell culture vessel, and irradiated for 1 to 40 minutes;
  • visible light having a wavelength of 400 to 700 nm is incident from the cell culture surface or the bottom of the cell culture vessel for 10 to 60 minutes.
  • a cell culture apparatus for use in photocell desorption in cell culture in vitro comprising: a cell culture vessel, wherein a photosensitive semiconductor structure layer is prepared as a cell culture surface on a cell contact surface of the cell culture vessel
  • the photosensitive semiconductor is a photosensitive semiconductor having a light-to-hydrophobic-hydrophilic conversion property
  • the photosensitive semiconductor structural layer is a photosensitive semiconductor film or a photosensitive semiconductor micro/nano lattice, wherein the photosensitive semiconductor film has a grain size of 2 to 100 nm, thickness 50 nm to 2000 nm, density of semiconductor nanodots in the photosensitive semiconductor micro/nano lattice The range is 1.
  • the photosensitive semiconductor is titanium oxide, zinc oxide, tin oxide, iron oxide.
  • the photosensitive semiconductor film is an oxidized film, a zinc oxide film, a tin oxide film, an iron oxide film or a zirconia film;
  • the photosensitive semiconductor micro-nano lattice is a titanium oxide micro-nano lattice, zinc oxide Micro sodium lattice, oxygen tin micro sodium lattice, iron oxide micro sodium lattice or zirconia micro sodium lattice.
  • the cells are adherent cells cultured in a simulated physiological environment in vitro.
  • the cell culture vessel is a commercially available cell culture vessel, which is commercially available, commonly made of silicate glass, quartz, polystyrene, polylactic acid, polyglycolic acid or polyacrylate.
  • the photosensitive semiconductor thinning can be prepared by a conventional sol-gel method, chemical vapor deposition or physical vapor deposition.
  • the photosensitive semiconductor micro-sodium lattice can be prepared by a prior art phase separation self-assembly method, liquid template deposition, vapor phase template deposition, thin film photolithography, hydrothermal method or printing.
  • a photosensitive semiconductor material which can undergo a transition of hydrophobicity to hydrophilic surface under light irradiation is selected by utilizing characteristics in which cells are liable to adhere to a relatively hydrophobic surface and are not easily attached to a hydrophilic surface, and in cell culture.
  • the cells of the vessel contact the surface of the photo-sensitized semiconductor film or the micro-sodium lattice as the cell culture surface:
  • the surface wettability of the cultured cells changes after the light is irradiated, and the cells spontaneously detach from the surface of the culture device. Achieve cell desorption.
  • the photosensitive semiconductor film or the photosensitive semiconductor micro/nano lattice may also be replaced by other surface nanostructures of the photosensitive semiconductor, such as a sodium bar array or a nanorod film, a nanoflower array or a sodium popcorn film.
  • the photosensitive semiconductor is preferably titanium oxide zinc oxide, tin oxide, iron oxide or zirconium oxide.
  • the present invention has the following beneficial technical effects :
  • the method of the invention has the advantages of high cell detachment efficiency, small damage to cells, simple operation, wide application range and the like, and has strong practicability.
  • the cell culture apparatus of the present invention only needs to be slightly modified from the prior art cell culture vessels, has low cost, and is easy to implement and is convenient for popularization and application.
  • Fig. 1 is an inverted micrograph of the cultured cells of Example 1 before ultraviolet light irradiation using an inverted biological microscope.
  • Fig. 2 is an inverted micrograph of the cultured cells of Example 1 after ultraviolet light observation using an inverted biological microscope.
  • Fig. 3 is a graph showing the comparison of MTS activity values of the detached cells in Example 1 and the control group obtained by the MTS assay. detailed description
  • the nanodots in the titanium oxide micro-nano lattice have a density of 1.0 x 10 1 Q / cm 2 and a dot size of 200 nm 500
  • the bone cells were cultured in vitro on the cell culture surface of the above quartz glass cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 350 nm was incident from the bottom of the cell culture vessel, and irradiation for 30 minutes allowed 91% of the cells to be detached from the surface. .
  • Fig. 1 and Fig. 2 are inverted micrographs of the cultured cells of Example 1 observed before and after ultraviolet irradiation, respectively, observed by an inverted biological microscope. Comparing Fig. 1 and Fig. 2, it can be seen that a large number of cells changed from fusiform to spheroidal after ultraviolet light irradiation, indicating that a large number of cells are about to detach.
  • the activity of the detached cells in the control group cultured on the standard cell culture plate of Example 1 and the same conditions was examined by MTS assay, and the MTS activity values of the detached cells in Example 1 and the control group were compared.
  • the activity value (OD value, optical density value, also referred to as absorbance) of the cells detached in Example 1 is significantly higher than that of the control cultured on the standard cell culture plate under the same conditions.
  • the activity values of the cells detached from the group indicate that the photodetachment has good safety, and the detached cells still have a good activity, and the activity is even higher than that of the cells detached from the control group.
  • MTS assay is a commonly used method for detecting cell viability in the art, and the MTS reagent used is also a conventional reagent, which is commercially available from manufacturers such as Promega.
  • the chemical names of MTS are as follows: 3-(4,5-dime&ylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfopheny l)-2H-tetrazolium, inner salt.
  • a zinc oxide film is prepared as a cell culture surface by chemical vapor deposition on a cell contact surface of a silicate glass cell culture vessel.
  • the zinc oxide film has a grain size of 2 to 10 nm and a thickness of SOnrtio.
  • the fibroblasts were cultured in vitro on the cell culture surface of the above silicate glass cell culture vessel, and after three days of culture, ultraviolet light having a wavelength of 300 nm was incident from the bottom of the cell culture vessel, and irradiation was performed for 1 minute, so that 70% of the cells were obtained. The surface is separated.
  • a titanium oxide film was prepared as a cell culture surface by physical vapor deposition on the cell contact surface of the polylactic acid cell culture vessel, and the titanium oxide film had a crystal grain size of 10 to 30 nm and a thickness of 1000 ⁇ .
  • the fibroblasts were cultured in vitro on the cell culture surface of the above polylactic acid cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 365 nm was incident from the bottom of the cell culture vessel, and irradiation for 25 minutes allowed 74% of the cells to be detached from the surface. .
  • An iron oxide micro-nano lattice was prepared as a cell culture surface on the cell contact surface of the silicate glass cell culture vessel by liquid template deposition method, and the density of the semiconductor nanodots in the iron oxide micro-nano lattice was in the range of 1.0 ⁇ 10. 12 / cm 2 , point size range from 10 to 100.
  • vascular endothelial cells were cultured in vitro on the cell culture surface of the above silicate glass cell culture vessel, and after three days of culture, visible light having a wavelength of 700 nm was incident from the bottom of the cell culture vessel, and irradiation was performed for 25 minutes to make 90% of the cells from the surface. Get rid of.
  • Example 5
  • a tin oxide film was prepared as a cell culture surface by a vapor phase template deposition on a cell contact surface of a polyglycolic acid cell culture vessel, and the tin oxide film had a grain size of 20 to 80 nm and a thickness of 2000 ⁇ .
  • Epithelial cells were cultured in vitro on the cell culture surface of the above-mentioned polyglycolic acid cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 300 nm was incident from the bottom of the cell culture vessel, and irradiation for 5 minutes allowed 80% of the cells to be detached from the surface. .
  • An iron oxide film was prepared as a cell culture surface on a cell contact surface of a quartz glass cell culture vessel by a sol-gel method, and the iron oxide film had a grain size of 50 to 100 nm and a thickness of ⁇ leg.
  • the fibroblasts were cultured in vitro on the cell culture surface of the above quartz glass cell culture vessel, and after three days of culture, visible light having a wavelength of 420 nm was incident from the bottom of the cell culture vessel, and irradiation was carried out for 10 minutes to detach 72% of the cells from the surface.
  • Example 7
  • a titanium oxide micro-nano lattice is prepared on the cell contact surface of the silicate glass cell culture vessel as a cell culture surface by a printing method, and the density of the semiconductor nanodots in the titanium oxide micro-nano lattice is in the range of l. lx l0 1Q / Cm 2 , the dot size ranges from 400 nm to 500 nm.
  • Cardiomyocytes were cultured in vitro on the cell culture surface of the above silicate glass cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 365 nm was incident from the bottom of the cell culture vessel, and after irradiation for 30 minutes, 66% of the cells were detached from the surface.
  • ultraviolet light having a wavelength of 365 nm was incident from the bottom of the cell culture vessel, and after irradiation for 30 minutes, 66% of the cells were detached from the surface.
  • a zirconia film was prepared as a cell culture surface on a cell contact surface of a polyacrylate cell culture vessel by a sol-gel method, and the zirconia film had a crystal grain size of 2 to 20 nm and a thickness of 1,500 ⁇ .
  • the fibroblasts were cultured in vitro on the cell culture surface of the above polyacrylate cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 365 nm was incident from the bottom of the cell culture vessel, and after irradiation for 30 minutes, 85% of the cells were detached from the surface.
  • ultraviolet light having a wavelength of 365 nm was incident from the bottom of the cell culture vessel, and after irradiation for 30 minutes, 85% of the cells were detached from the surface.
  • a titanium oxide micro-nano lattice was prepared as a cell culture surface on a cell contact surface of a quartz glass cell culture vessel having a titanium oxide film by thin film photolithography, and half of the titanium oxide micro-nano lattice
  • the density of the conductor nanodots ranges from 1.0x10 1 () / cm 2
  • the dot size ranges from 300 to 500 nm.
  • the fibroblasts were cultured in vitro on the cell culture surface of the quartz glass cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 320 nm was incident from the bottom of the cell culture vessel, and irradiation for 10 minutes allowed 76% of the cells to be detached from the surface. .
  • a titanium oxide film was prepared by hydrothermal method on a cell contact surface of a polystyrene cell culture vessel as a cell culture surface having a crystal grain size of 20 70 nm and a thickness of 1200 nm.
  • Cell culture in the above polystyrene cell culture vessel The surface was cultured in vitro for fibroblasts. After three days of culture, ultraviolet light having a wavelength of 300 nm was incident from the bottom of the cell culture vessel for 15 minutes, and 70% of the cells were detached from the surface.
  • a zinc oxide film was prepared as a cell culture surface on a cell contact surface of a silicate glass cell culture vessel by a sol-gel method, and the zinc oxide film had a grain size of 10 70 nm and a thickness of 1800.
  • the fibroblasts were cultured in vitro on the cell culture surface of the above silicate glass cell culture vessel, and after three days of culture, ultraviolet light having a wavelength of 300 nm was incident from the bottom of the cell culture vessel, and irradiation was performed for 1 minute, so that 70% of the cells were obtained. The surface is separated.

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Abstract

Provided are a light-induced cell desorption method and a cell culture device therefor. The light-induced cell desorption method comprises: before in vitro cell culture is performed, preparing a photosensitive semiconductor structure layer acting as a cell culture surface on a cell contact surface of a cell culture vessel; then, performing in vitro cell culture on the cell culture surface of the cell culture vessel; after the in vitro cell culture is completed, desorbing cells growing on the cell culture surface from the cell culture vessel through irradiation of ultraviolet light or visible light. The method can maximally reduce damage to the cells during cell desorption. The cell culture device used in the method comprises the cell culture vessel, wherein a photosensitive semiconductor structure layer acting as a cell culture surface is prepared on the cell contact surface of the cell culture vessel.

Description

光致细胞脱附的方法及其所使用的细胞培养器具 技术领域  Photoinduced cell desorption method and cell culture apparatus therefor
本发明属于组织工程领域, 具体涉及一种光致细胞脱附的方法及其所 使用的细胞培养器具。 背景技术  The present invention belongs to the field of tissue engineering, and in particular relates to a method of photo-induced cell desorption and a cell culture apparatus used therefor. Background technique
体外细胞培养(in vitro cell culture)是目前生物医药技术、 生物材料方 面的研究必不可少的技术。 在体外细胞培养中如何减少外界不确定因素对 细胞行为的不利影响、 使之有效附着、 增殖、 分化, 并在需要的时候与培 养基分离, 从而细胞水平上体现对药物或材料的响应, 这些直接影响新药 物与新型医用材料的研发。  In vitro cell culture is an indispensable technology for the research of biomedical technology and biological materials. How to reduce the adverse effects of external uncertainties on cell behavior in in vitro cell culture, enable it to adhere, proliferate, differentiate, and separate from the culture medium when needed, thereby reflecting the response to drugs or materials at the cellular level. Directly affect the development of new drugs and new medical materials.
在体外细胞培养所涉及的细胞中, 很多为贴壁细胞。 通常采用在聚苯 乙烯的细胞培养器具中进行细胞培养, 贴壁细胞一般通过细胞外基质 (ECM) 和整合素等较为牢固地附着在细胞培养器具表面。 研究发现, 基 底材料表面的宏观亲水憎水特性也对细胞能否附着以及增殖和分化等行为 有着非常重要的影响。 细胞倾向于附着在微憎水的表面上, 而不易于附着 于亲水的表面之上。 在涉及到对一些细胞相关酶活性表征时, 需要先要使 细胞从表面上脱离下来。 现有的脱附方法一种是通过铲刀以机械力剥离细 胞; 另一种是采用以胰酶为代表的消化酶将连接细胞与培养基材的细胞外 基质和整合素等消化, 使细胞脱离基材表面。 前一种方式中以机械力剥离 细胞肯定会对细胞造成一定的损伤, 而后一种方式中胰酶的用量和作用时 间则需要较为精确的控制, 否则可能同时将细胞膜蛋白消化, 从而损伤细 胞。 而且, 由于 ECM等本身即具有一定的生物学功能, 完全脱离了 ECM 的细胞能否完整、 可靠地反映出所要表征的效应, 也还存在疑问。  Many of the cells involved in in vitro cell culture are adherent cells. Cell culture is usually carried out in a cell culture apparatus of polystyrene, and adherent cells are generally firmly attached to the surface of the cell culture apparatus through an extracellular matrix (ECM) and integrin. It has been found that the macroscopic hydrophilic hydrophobic properties on the surface of the substrate material also have a very important influence on the cell attachment and proliferation and differentiation. The cells tend to adhere to the surface of the microporous water and are not easily attached to the hydrophilic surface. When it comes to the characterization of some cell-related enzyme activities, it is necessary to first detach the cells from the surface. One of the existing desorption methods is to mechanically peel the cells by a blade; the other is to digest the connected cells and the extracellular matrix of the culture substrate and the integrin using a digestive enzyme represented by trypsin to make the cells Get rid of the surface of the substrate. In the former method, the mechanical separation of cells will definitely cause some damage to the cells. In the latter method, the amount and duration of trypsin need to be controlled more precisely. Otherwise, the membrane proteins may be digested at the same time, thereby damaging the cells. Moreover, since ECM itself has certain biological functions, it is also questionable whether cells completely separated from ECM can completely and reliably reflect the effects to be characterized.
近年来, OKA O等采用温敏聚合物利用其憎水亲水特性可随温度变化 的特性成功地通过温度变化实现了细胞从细胞培养器皿上分离 [N. Matsuda, T. Shimizu, M. Yamato, T. Okano, Tissue Engineering Based on Cell Sheet Technology, Advanced Materials, 2007, 19, 3089-3099]。 但是, 以温度作为外 场仍需要较长的时间, 而所需的低温过程在一定程度可损伤细胞的功能。 发明内容 In recent years, OKA O and the like have used temperature-sensitive polymers to successfully separate cells from cell culture vessels by temperature changes using their hydrophobic hydrophilic properties. [N. Matsuda, T. Shimizu, M. Yamato , T. Okano, Tissue Engineering Based on Cell Sheet Technology, Advanced Materials, 2007, 19, 3089-3099]. However, with temperature as the outside The field still takes a long time, and the required low temperature process can damage the function of the cells to a certain extent. Summary of the invention
本发明提供了一种用于体外细胞培养中光致细胞脱附的方法及其所使 用的细胞培养器具, 可最大程度减小在细胞脱附时对细胞的损伤。  The present invention provides a method for photocell desorption in cell culture in vitro and a cell culture apparatus therefor, which can minimize damage to cells upon cell desorption.
一种用于体外细胞培养中光致细胞脱附的方法, 包括以下步骤: A method for photocell desorption in cell culture in vitro, comprising the steps of:
( 1 )在进行体外细胞培养前, 在细胞培养器皿的细胞接触表面上制备 光敏半导体结构层作为细胞培养表面, 所述光敏半导体为具有光至憎水-亲 水转换特性的光敏半导体, 所述光敏半导体结构层为光敏半导体薄膜或光 敏半导体微纳点阵, 其中, 所述光敏半导体薄膜的晶粒尺寸为 2〜100nm, 厚度为 50nm〜2000nm,所述光敏半导体微纳点阵中的半导体纳米点的密度 范围在 1 .0x l 01()〜l x l 012/cm2 , 点尺寸范围在 10謹〜 500謹; (1) preparing a photosensitive semiconductor structure layer as a cell culture surface on a cell contact surface of a cell culture vessel before performing in vitro cell culture, the photosensitive semiconductor being a photosensitive semiconductor having a light to hydrophobic-hydrophilic conversion property, The photosensitive semiconductor structure layer is a photosensitive semiconductor film or a photosensitive semiconductor micro/nano dot matrix, wherein the photosensitive semiconductor film has a crystal grain size of 2 to 100 nm and a thickness of 50 nm to 2000 nm, and the semiconductor nanometer in the photosensitive semiconductor micro/nano lattice The density of the dots ranges from 1.0x l 0 1() to lxl 0 12 /cm 2 , and the dot size ranges from 10 to 500 cents;
C 2 )在所述细胞培养器皿的细胞培养表面上进行并完成体外细胞培养 后, 通过紫外光或可见光照射处理使生长于所述细胞培养表面的细胞从所 述细胞培养器皿脱附。  C 2 ) After performing cell culture on the cell culture surface of the cell culture vessel and performing in vitro cell culture, cells grown on the cell culture surface are desorbed from the cell culture vessel by ultraviolet light or visible light irradiation treatment.
优选的技术方案中, 所述光敏半导体为氧化钛、 氧化锌、 氧化锡、 氧 化铁或氧化锆。 即, 所述光敏半导体薄膜为氧化钛薄膜、 氧化锌薄膜、 氧 化锡薄膜、 氧化铁薄膜或氧化锆薄膜; 所述光敏半导体微纳点阵为氧化钛 微纳点阵、 氧化锌微纳点阵、 氧化锡微纳点阵、 氧化铁微纳点阵或氧化锆 微纳点阵。  In a preferred embodiment, the photosensitive semiconductor is titanium oxide, zinc oxide, tin oxide, iron oxide or zirconium oxide. That is, the photosensitive semiconductor film is a titanium oxide film, a zinc oxide film, a tin oxide film, an iron oxide film or a zirconia film; the photosensitive semiconductor micro-nano lattice is a titanium oxide micro-nano lattice, a zinc oxide micro-nano lattice , tin oxide micro-nano lattice, iron oxide micro-nano lattice or zirconia micro-nano lattice.
其中, 所述的紫外光或可见光照射处理的过程为:  Wherein, the process of ultraviolet light or visible light irradiation treatment is:
将波长为 300~400纳米的紫外光从细胞培养器皿底部入射, 照射 1~40 分钟;  Ultraviolet light with a wavelength of 300~400 nm is incident from the bottom of the cell culture vessel, and irradiated for 1 to 40 minutes;
或者, 将波长为 400~700纳米的可见光从细胞培养器皿细胞培养表面 或底部入射, 照射 10~60分钟。  Alternatively, visible light having a wavelength of 400 to 700 nm is incident from the cell culture surface or the bottom of the cell culture vessel for 10 to 60 minutes.
一种用于体外细胞培养中光致细胞脱附时所使用的细胞培养器具, 包 括: 细胞培养器皿, 其中, 在所述细胞培养器皿的细胞接触表面上制备有 光敏半导体结构层作为细胞培养表面, 所述光敏半导体为具有光至憎水-亲 水转换特性的光敏半导体, 所述光敏半导体结构层为光敏半导体薄膜或光 敏半导体微纳点阵, 其中, 所述光敏半导体薄膜的晶粒尺寸为 2〜100nm, 厚度为 50nm〜2000nm,所述光敏半导体微纳点阵中的半导体纳米点的密度 范围在 1 .0x 101Q〜l x l 012/cm2 , 点尺寸范菌在 10nm〜5(X)nm; 优选的技术方案中, 所述光敏半导体为氧化钛、 氧化锌、 氧化锡、 氧 化铁或氧化锆 即:: 所述光敏半导体薄膜为氧化欽薄膜、 氧化锌薄膜、 氧 化锡薄膜、 氧化铁薄膜或氧化锆薄膜; 所述光敏半导体微纳点阵为氧化钛 微纳点阵、 氧化锌微鈉点阵、 氧^锡微鈉点阵、 氧化铁微鈉点阵或氧化锆 微鈉点阵。 A cell culture apparatus for use in photocell desorption in cell culture in vitro, comprising: a cell culture vessel, wherein a photosensitive semiconductor structure layer is prepared as a cell culture surface on a cell contact surface of the cell culture vessel The photosensitive semiconductor is a photosensitive semiconductor having a light-to-hydrophobic-hydrophilic conversion property, and the photosensitive semiconductor structural layer is a photosensitive semiconductor film or a photosensitive semiconductor micro/nano lattice, wherein the photosensitive semiconductor film has a grain size of 2 to 100 nm, thickness 50 nm to 2000 nm, density of semiconductor nanodots in the photosensitive semiconductor micro/nano lattice The range is 1. 0x 10 1Q 〜 lxl 0 12 /cm 2 , and the spot size is 10 nm 〜 5 (X) nm; in a preferred technical solution, the photosensitive semiconductor is titanium oxide, zinc oxide, tin oxide, iron oxide. Or zirconia:: the photosensitive semiconductor film is an oxidized film, a zinc oxide film, a tin oxide film, an iron oxide film or a zirconia film; the photosensitive semiconductor micro-nano lattice is a titanium oxide micro-nano lattice, zinc oxide Micro sodium lattice, oxygen tin micro sodium lattice, iron oxide micro sodium lattice or zirconia micro sodium lattice.
本发明中:  In the present invention:
所述细胞为在体外模拟生理环境下培养的贴壁细胞。  The cells are adherent cells cultured in a simulated physiological environment in vitro.
所述細胞培养器皿 常用的细胞培养器皿, 可从市场购得, 通.常由硅 酸盐玻璃、 石英、 :聚苯乙烯、 聚乳酸、:聚乙醇酸或聚丙烯酸酯制成  The cell culture vessel is a commercially available cell culture vessel, which is commercially available, commonly made of silicate glass, quartz, polystyrene, polylactic acid, polyglycolic acid or polyacrylate.
所述光敏半导体薄滅可以采用常规的溶胶-凝胶法、 化学气相沉积或物 理气相沉积等方法制备。  The photosensitive semiconductor thinning can be prepared by a conventional sol-gel method, chemical vapor deposition or physical vapor deposition.
所述光敏半导体微鈉点阵可以通:过现有技术中的分相自组装法、: 液相 模板沉积、 气相模板沉积、 薄膜光刻法、 水热法或 打印等方法制备。  The photosensitive semiconductor micro-sodium lattice can be prepared by a prior art phase separation self-assembly method, liquid template deposition, vapor phase template deposition, thin film photolithography, hydrothermal method or printing.
本发明中, 利用细胞易于附着于较为憎水的表面而不易于附着于亲水 的表面等特性, 选择在光照射下表面可发生憎水向亲水的转变的光敏半导 体材料, 并在細胞培养器皿的細胞:接触表面形威光敏半导体薄膜或微鈉点 阵作为细胞培养表面:, 这样, :所培养的细胞在经光照射后, 表面润湿性发 生变化, 细胞自发从培养器具表面脱离, 实现细胞脱附。  In the present invention, a photosensitive semiconductor material which can undergo a transition of hydrophobicity to hydrophilic surface under light irradiation is selected by utilizing characteristics in which cells are liable to adhere to a relatively hydrophobic surface and are not easily attached to a hydrophilic surface, and in cell culture. The cells of the vessel: contact the surface of the photo-sensitized semiconductor film or the micro-sodium lattice as the cell culture surface: Thus, the surface wettability of the cultured cells changes after the light is irradiated, and the cells spontaneously detach from the surface of the culture device. Achieve cell desorption.
因此, 本发明中, 所述光敏半导体薄膜或光敏半导体微纳点阵也可以 由光敏半导体的其他表面纳米结构替代, 如鈉米棒阵列或纳米棒薄膜、.纳 米花阵列或鈉米花薄膜等。 所述的光敏半导体优选为氧化钛 氧化锌、 氧 化锡、 氧化铁或氧化锆。  Therefore, in the present invention, the photosensitive semiconductor film or the photosensitive semiconductor micro/nano lattice may also be replaced by other surface nanostructures of the photosensitive semiconductor, such as a sodium bar array or a nanorod film, a nanoflower array or a sodium popcorn film. The photosensitive semiconductor is preferably titanium oxide zinc oxide, tin oxide, iron oxide or zirconium oxide.
与现有技术相比, 本发明具有以下有益的技术效果 : Compared with the prior art, the present invention has the following beneficial technical effects :
本发明方法具有细胞脫离效率高、 对细胞损伤小、 操作简便、 适用细 胞范围广等特点 具有很强的实用性。 本发明細胞培养器具只需对现有技 术中的细胞培荞器皿进行很小的改迸, 成本低, 易于实现 便于推广应用。 附图说明  The method of the invention has the advantages of high cell detachment efficiency, small damage to cells, simple operation, wide application range and the like, and has strong practicability. The cell culture apparatus of the present invention only needs to be slightly modified from the prior art cell culture vessels, has low cost, and is easy to implement and is convenient for popularization and application. DRAWINGS
图 :1 为采用倒置生物显微镜观察实施例 1 中培养细胞在紫外光照前的 倒.置显微图■。 图 2为采用倒置生物显微镜观察实施例 1 中培养细胞在紫外光照后的 倒置显微图。 Fig. 1 is an inverted micrograph of the cultured cells of Example 1 before ultraviolet light irradiation using an inverted biological microscope. Fig. 2 is an inverted micrograph of the cultured cells of Example 1 after ultraviolet light observation using an inverted biological microscope.
图 3为采用 MTS检测法得到的实施例 1和对照组中的脱离的细胞的 MTS活性值对比图。 具体实施方式  Fig. 3 is a graph showing the comparison of MTS activity values of the detached cells in Example 1 and the control group obtained by the MTS assay. detailed description
下面结合实施例和附图来详细说明本发明, 但本发明并不仅限于此。 实施例 1  The invention will be described in detail below with reference to the embodiments and the drawings, but the invention is not limited thereto. Example 1
以分相自组装法在石英玻璃细胞培养器皿的细胞接触表面上制备氧化 钛微纳点阵, 过程如下: 按乙醇: 去离子水: 乙酰丙酮 =0.3 : 1 1 (以摩尔 比计)配制溶液, 并按 0.02mol/L加入钛酸四正丁酯、 按 40g L加入聚乙'烯 基吡咯烷酮(K-30), 形成前驱体溶液, 滴加到石英玻璃细胞培养器皿的细 胞接触表面上, 以 6000 转每秒的速度旋涂 40s, 然后在 50CTC下热处理两 小时得到氧化钛微纳点阵作为细胞培养表面。 该氧化钛微纳点阵中纳米点 的密度为 1.0x l01Q/cm2 , 点尺寸为 200nm 500 The titanium oxide micro-nano lattice was prepared by the phase separation self-assembly method on the cell contact surface of the quartz glass cell culture vessel as follows: Ethanol: Deionized water: Acetylacetone = 0.3: 1 1 (in molar ratio) And adding tetra-n-butyl titanate at 0.02 mol/L, adding poly(ethylene) alkenylpyrrolidone (K-30) to 40 g of L to form a precursor solution, which is added dropwise to the cell contact surface of the quartz glass cell culture vessel. Spin coating for 40 s at 6000 rpm, followed by heat treatment at 50 CTC for two hours gave a titanium oxide micro-nano lattice as the cell culture surface. The nanodots in the titanium oxide micro-nano lattice have a density of 1.0 x 10 1 Q / cm 2 and a dot size of 200 nm 500
在上述石英玻璃细胞培养器皿的细胞培养表面上进行骨细胞体外培 养, 培养三天后, 以波长为 350纳米的紫外光从细胞培养器皿底部入射, 照射 30分钟, 即可使 91%细胞从表面脱离。  The bone cells were cultured in vitro on the cell culture surface of the above quartz glass cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 350 nm was incident from the bottom of the cell culture vessel, and irradiation for 30 minutes allowed 91% of the cells to be detached from the surface. .
图 1和图 2分别为采用倒置生物显微镜所观察到的实施例 1 中培养细 胞在紫外光照前、 后的倒置显微图。对比图 1和图 2, 可以看出经紫外光照 射后大量细胞由梭形变成类球形, 说明大量细胞即将脱离。  Fig. 1 and Fig. 2 are inverted micrographs of the cultured cells of Example 1 observed before and after ultraviolet irradiation, respectively, observed by an inverted biological microscope. Comparing Fig. 1 and Fig. 2, it can be seen that a large number of cells changed from fusiform to spheroidal after ultraviolet light irradiation, indicating that a large number of cells are about to detach.
采用 MTS检测法对实施例 1和同样条件下在标准细胞培养板上培养的 对照组中的脱离的细胞的活性进行检测, 实施例 1 和对照组中的脱离的细 胞的 MTS活性值对比如图 3所示, 从图 3中可以看出, 实施例 1中脱离的 细胞的活性值(OD值, optical density值, 又称吸光值) 明显高于同样条件 下在标准细胞培养板上培养的对照组中所脱离的细胞的活性值, 说明光致 脱离具有的很好的安全性, 脱离的细胞仍具有很好的活性, 其活性甚至高 于对照组中所脱离的细胞的活性。  The activity of the detached cells in the control group cultured on the standard cell culture plate of Example 1 and the same conditions was examined by MTS assay, and the MTS activity values of the detached cells in Example 1 and the control group were compared. As shown in Fig. 3, it can be seen from Fig. 3 that the activity value (OD value, optical density value, also referred to as absorbance) of the cells detached in Example 1 is significantly higher than that of the control cultured on the standard cell culture plate under the same conditions. The activity values of the cells detached from the group indicate that the photodetachment has good safety, and the detached cells still have a good activity, and the activity is even higher than that of the cells detached from the control group.
上述 MTS检测法为本领域中常用的细胞活性检测方法, 其中所采用的 MTS试剂也为常规试剂, 可从 Promega公司等生产厂家购得。 MTS的化学 名称如下: 3-(4,5-dime&ylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfopheny l)-2H-tetrazolium, inner salt。 实施例 2 The above MTS assay is a commonly used method for detecting cell viability in the art, and the MTS reagent used is also a conventional reagent, which is commercially available from manufacturers such as Promega. The chemical names of MTS are as follows: 3-(4,5-dime&ylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfopheny l)-2H-tetrazolium, inner salt. Example 2
以化学气相沉积法在硅酸盐玻璃细胞培养器皿的细胞接触表面上制备 氧化锌薄膜作为细胞培养表面, 该氧化锌薄膜晶粒尺寸为 2〜10nm, 厚度 为 SOnrtio  A zinc oxide film is prepared as a cell culture surface by chemical vapor deposition on a cell contact surface of a silicate glass cell culture vessel. The zinc oxide film has a grain size of 2 to 10 nm and a thickness of SOnrtio.
在上述硅酸盐玻璃细胞培养器皿的细胞培养表面进行成纤维细胞体外 培养, 培养三天后, 以波长为 300纳米的紫外光从细胞培养器皿底部入射, 照射 1分钟, 即可使 70%细胞从表面脱离。 实施例 3  The fibroblasts were cultured in vitro on the cell culture surface of the above silicate glass cell culture vessel, and after three days of culture, ultraviolet light having a wavelength of 300 nm was incident from the bottom of the cell culture vessel, and irradiation was performed for 1 minute, so that 70% of the cells were obtained. The surface is separated. Example 3
以物理气相沉积法在聚乳酸细胞培养器皿的细胞接触表面上制备氧化 钛薄膜作为细胞培养表面, 该氧化钛薄膜晶粒尺寸为 10〜30nm, 厚度为 1000議。  A titanium oxide film was prepared as a cell culture surface by physical vapor deposition on the cell contact surface of the polylactic acid cell culture vessel, and the titanium oxide film had a crystal grain size of 10 to 30 nm and a thickness of 1000 Å.
在上述聚乳酸细胞培养器皿的细胞培养表面进行成纤维细胞体外培 养, 培养三天后, 以波长为 365纳米的紫外光从细胞培养器皿底部入射, 照射 25分钟, 即可使 74%细胞从表面脱离。 实施例 4  The fibroblasts were cultured in vitro on the cell culture surface of the above polylactic acid cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 365 nm was incident from the bottom of the cell culture vessel, and irradiation for 25 minutes allowed 74% of the cells to be detached from the surface. . Example 4
以液相模板沉积法在硅酸盐玻璃细胞培养器皿的细胞接触表面上制备 氧化铁微纳点阵作为细胞培养表面, 该氧化铁微纳点阵中的半导体纳米点 的密度范围在 1.0x l012/cm2 , 点尺寸范围在 10謹〜 100謹。 An iron oxide micro-nano lattice was prepared as a cell culture surface on the cell contact surface of the silicate glass cell culture vessel by liquid template deposition method, and the density of the semiconductor nanodots in the iron oxide micro-nano lattice was in the range of 1.0×10. 12 / cm 2 , point size range from 10 to 100.
在上述硅酸盐玻璃细胞培养器皿的细胞培养表面进行血管内皮细胞体 外培养, 培养三天后, 以波长为 700纳米的可见光从细胞培养器皿底部入 射, 照射 25分钟, 即可使 90%细胞从表面脱离。 实施例 5  The vascular endothelial cells were cultured in vitro on the cell culture surface of the above silicate glass cell culture vessel, and after three days of culture, visible light having a wavelength of 700 nm was incident from the bottom of the cell culture vessel, and irradiation was performed for 25 minutes to make 90% of the cells from the surface. Get rid of. Example 5
以气相模板沉积在聚羟基乙酸细胞培养器皿的细胞接触表面上制备氧 化锡薄膜作为细胞培养表面, 该氧化锡薄膜晶粒尺寸为 20〜80nm, 厚度为 2000議。 在上述聚羟基乙酸细胞培养器皿的细胞培养表面进行上皮细胞体外培 养, 培养三天后, 以波长为 300纳米的紫外光从细胞培养器皿底部入射, 照射 5分钟, 即可使 80%细胞从表面脱离。 实施例 6 A tin oxide film was prepared as a cell culture surface by a vapor phase template deposition on a cell contact surface of a polyglycolic acid cell culture vessel, and the tin oxide film had a grain size of 20 to 80 nm and a thickness of 2000 Å. Epithelial cells were cultured in vitro on the cell culture surface of the above-mentioned polyglycolic acid cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 300 nm was incident from the bottom of the cell culture vessel, and irradiation for 5 minutes allowed 80% of the cells to be detached from the surface. . Example 6
以溶胶-凝胶法在石英玻璃细胞培养器皿的细胞接触表面上制备氧化铁 薄膜作为细胞培养表面, 该氧化铁薄膜晶粒尺寸为 50〜100nm, 厚度为 ■腿。  An iron oxide film was prepared as a cell culture surface on a cell contact surface of a quartz glass cell culture vessel by a sol-gel method, and the iron oxide film had a grain size of 50 to 100 nm and a thickness of ■ leg.
在上述石英玻璃细胞培养器皿的细胞培养表面进行成纤维细胞体外培 养, 培养三天后, 以波长为 420纳米的可见光从细胞培养器皿底部入射, 照射 10分钟, 即可使 72%细胞从表面脱离。 实施例 7  The fibroblasts were cultured in vitro on the cell culture surface of the above quartz glass cell culture vessel, and after three days of culture, visible light having a wavelength of 420 nm was incident from the bottom of the cell culture vessel, and irradiation was carried out for 10 minutes to detach 72% of the cells from the surface. Example 7
以打印法在硅酸盐玻璃细胞培养器皿的细胞接触表面上制备氧化钛微 纳点阵作为细胞培养表面, 该氧化钛微纳点阵中的半导体纳米点的密度范 围在 l . l x l01Q/cm2 , 点尺寸范围在 400nm〜500nm。 A titanium oxide micro-nano lattice is prepared on the cell contact surface of the silicate glass cell culture vessel as a cell culture surface by a printing method, and the density of the semiconductor nanodots in the titanium oxide micro-nano lattice is in the range of l. lx l0 1Q / Cm 2 , the dot size ranges from 400 nm to 500 nm.
在上述硅酸盐玻璃细胞培养器皿的细胞培养表面进行心肌细胞体外培 养。 培养三天后, 以波长为 365纳米的紫外光从细胞培养器皿底部入射, 照射 30分钟, 即可使 66%细胞从表面脱离。 实施例 8  Cardiomyocytes were cultured in vitro on the cell culture surface of the above silicate glass cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 365 nm was incident from the bottom of the cell culture vessel, and after irradiation for 30 minutes, 66% of the cells were detached from the surface. Example 8
以溶胶-凝胶法在聚丙烯酸酯细胞培养器皿的细胞接触表面上制备氧化 锆薄膜作为细胞培养表面, 该氧化锆薄膜晶粒尺寸为 2〜20nm, 厚度为 1500匪。  A zirconia film was prepared as a cell culture surface on a cell contact surface of a polyacrylate cell culture vessel by a sol-gel method, and the zirconia film had a crystal grain size of 2 to 20 nm and a thickness of 1,500 Å.
在上述聚丙烯酸酯细胞培养器皿的细胞培养表面进行成纤维细胞体外 培养。 培养三天后, 以波长为 365纳米的紫外光从细胞培养器皿底部入射, 照射 30分钟, 即可使 85%细胞从表面脱离。 实施例 9  The fibroblasts were cultured in vitro on the cell culture surface of the above polyacrylate cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 365 nm was incident from the bottom of the cell culture vessel, and after irradiation for 30 minutes, 85% of the cells were detached from the surface. Example 9
以薄膜光刻法在具有氧化钛薄膜的石英玻璃细胞培养器皿的细胞接触 表面上制备氧化钛微纳点阵作为细胞培养表面, 该氧化钛微纳点阵中的半 导体纳米点的密度范围在 1.0x l01()/cm2 , 点尺寸范围在 300 500nm A titanium oxide micro-nano lattice was prepared as a cell culture surface on a cell contact surface of a quartz glass cell culture vessel having a titanium oxide film by thin film photolithography, and half of the titanium oxide micro-nano lattice The density of the conductor nanodots ranges from 1.0x10 1 () / cm 2 , and the dot size ranges from 300 to 500 nm.
在上述石英玻璃细胞培养器皿的细胞培养表面进行成纤维细胞体外培 养, 培养三天后, 以波长为 320纳米的紫外光从细胞培养器皿底部入射, 照射 10分钟, 即可使 76%细胞从表面脱离。 实施例 10  The fibroblasts were cultured in vitro on the cell culture surface of the quartz glass cell culture vessel. After three days of culture, ultraviolet light having a wavelength of 320 nm was incident from the bottom of the cell culture vessel, and irradiation for 10 minutes allowed 76% of the cells to be detached from the surface. . Example 10
以水热法在聚苯乙烯细胞培养器皿的细胞接触表面上制备氧化钛薄膜 作为细胞培养表面, 该氧化钛薄膜晶粒尺寸为 20 70nm, 厚度为 1200nm 在上述聚苯乙烯细胞培养器皿的细胞培养表面进行成纤维细胞体外培 养, 培养三天后, 以波长为 300纳米的紫外光从细胞培养器皿底部入射, 照射 15分钟, 即可使 70%细胞从表面脱离。 实施例 11  A titanium oxide film was prepared by hydrothermal method on a cell contact surface of a polystyrene cell culture vessel as a cell culture surface having a crystal grain size of 20 70 nm and a thickness of 1200 nm. Cell culture in the above polystyrene cell culture vessel The surface was cultured in vitro for fibroblasts. After three days of culture, ultraviolet light having a wavelength of 300 nm was incident from the bottom of the cell culture vessel for 15 minutes, and 70% of the cells were detached from the surface. Example 11
以溶胶-凝胶法在硅酸盐玻璃细胞培养器皿的细胞接触表面上制备氧化 锌薄膜作为细胞培养表面, 该氧化锌薄膜晶粒尺寸为 10 70nm, 厚度为 1800  A zinc oxide film was prepared as a cell culture surface on a cell contact surface of a silicate glass cell culture vessel by a sol-gel method, and the zinc oxide film had a grain size of 10 70 nm and a thickness of 1800.
在上述硅酸盐玻璃细胞培养器皿的细胞培养表面进行成纤维细胞体外 培养, 培养三天后, 以波长为 300纳米的紫外光从细胞培养器皿底部入射, 照射 1分钟, 即可使 70%细胞从表面脱离。  The fibroblasts were cultured in vitro on the cell culture surface of the above silicate glass cell culture vessel, and after three days of culture, ultraviolet light having a wavelength of 300 nm was incident from the bottom of the cell culture vessel, and irradiation was performed for 1 minute, so that 70% of the cells were obtained. The surface is separated.

Claims

权 利 要 求 书 Claim
1、 一种用于体外细胞培养中光致细胞脱附的方法, 其特征在于, 包括 以下步骤: A method for photocell desorption in cell culture in vitro, comprising the steps of:
( 1 )在进行体外细胞培养前, 在细胞培养器皿的细胞接触表面上制备 光敏半导体结构层作为细胞培养表面, 所述光敏半导体为具有光至憎水-亲 水转换特性的光敏半导体, 所述光敏半导体结构层为光敏半导体薄膜或光 敏半导体微纳点阵, 其中, 所述光敏半导体薄膜的晶粒尺寸为 2〜100nm, 厚度为 50nm〜2000nm,所述光敏半导体微纳点阵中的半导体纳米点的密度 范围在 1.0x l 01()〜l x l 012/cm2 , 点尺寸范围在 10謹〜 500謹; (1) preparing a photosensitive semiconductor structure layer as a cell culture surface on a cell contact surface of a cell culture vessel before performing in vitro cell culture, the photosensitive semiconductor being a photosensitive semiconductor having a light to hydrophobic-hydrophilic conversion property, The photosensitive semiconductor structure layer is a photosensitive semiconductor film or a photosensitive semiconductor micro/nano dot matrix, wherein the photosensitive semiconductor film has a crystal grain size of 2 to 100 nm and a thickness of 50 nm to 2000 nm, and the semiconductor nanometer in the photosensitive semiconductor micro/nano lattice The density of the dots ranges from 1.0xl 0 1() to lxl 0 12 /cm 2 , and the dot size ranges from 10 to 500 cents;
( 2 )在所述细胞培养器皿的细胞培养表面上进行并完成体外细胞培养 后, 通过紫外光或可见光照射处理使生长于所述细胞培养表面的细胞从所 述细胞培养器皿脱附。  (2) After performing cell culture on the cell culture surface of the cell culture vessel and completing in vitro cell culture, cells grown on the cell culture surface are desorbed from the cell culture vessel by ultraviolet light or visible light irradiation treatment.
2、 如权利要求 1所述的用于体外细胞培养中光致细胞脱附的方法, 其 特征在于, 所述光敏半导体为氧化钛、 氧化锌、 氧化锡、 氧化铁或氧化锆。  The method for photocell desorption in cell culture in vitro according to claim 1, wherein the photosensitive semiconductor is titanium oxide, zinc oxide, tin oxide, iron oxide or zirconium oxide.
3、如权利要求 1或 2所述的用于体外细胞培养中光致细胞脱附的方法, 其特征在于, 所述的紫外光或可见光照射处理的过程为- 将波长为 300〜400纳米的紫外光从细胞培养器皿底部入射, 照射 1〜40 分钟;  The method for photocell desorption in cell culture in vitro according to claim 1 or 2, wherein the ultraviolet light or visible light irradiation treatment process is - a wavelength of 300 to 400 nm Ultraviolet light is incident from the bottom of the cell culture vessel and irradiated for 1 to 40 minutes;
或者, 将波长为 400~700纳米的可见光从细胞培养器皿的细胞培养表 面或底部入射, 照射 10〜60分钟。  Alternatively, visible light having a wavelength of 400 to 700 nm is incident from the cell culture surface or the bottom of the cell culture vessel, and irradiated for 10 to 60 minutes.
4、 一种用于体外细胞培养中光致细胞脱附时所使用的细胞培养器具, 包括: 细胞培养器皿, 其特征在于, 在所述细胞培养器皿的细胞接触表面 上制备有光敏半导体结构层作为细胞培养表面, 所述光敏半导体为具有光 至憎水-亲水转换特性的光敏半导体, 所述光敏半导体结构层为光敏半导体 薄膜或光敏半导体微纳点阵, 其中, 所述光敏半导体薄膜的晶粒尺寸为 2〜 lOOnm, 厚度为 50nn!〜 2000nm, 所述光敏半导体微纳点阵中的半导体纳米 点的密度范围在 1.0x l01Q〜l x l012/cm2 , 点尺寸范围在 10nm〜500nm。 4. A cell culture apparatus for use in photocell desorption in cell culture in vitro, comprising: a cell culture vessel, characterized in that a photosensitive semiconductor structural layer is prepared on a cell contact surface of the cell culture vessel. As a cell culture surface, the photosensitive semiconductor is a photosensitive semiconductor having a light-to-hydrophobic-hydrophilic conversion property, and the photosensitive semiconductor structural layer is a photosensitive semiconductor film or a photosensitive semiconductor micro/nano lattice, wherein the photosensitive semiconductor film The grain size is 2~100 nm and the thickness is 50nn! ~ 2000 nm, the density of the semiconductor nano-dots in the photosensitive semiconductor micro-nano lattice ranges from 1.0 x 10 1Q to lx 10 12 /cm 2 , and the dot size ranges from 10 nm to 500 nm.
5、 如权利要求 4所述的细胞培养器具, 其特征在于, 所述光敏半导体 为氧化钛、 氧化锌、 氧化锡、 氧化铁或氧化锆。  The cell culture apparatus according to claim 4, wherein the photosensitive semiconductor is titanium oxide, zinc oxide, tin oxide, iron oxide or zirconium oxide.
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