WO2013091142A1 - Lead frame pad containing microchannels for packaging high-power electronic component, packaging structure and process - Google Patents

Lead frame pad containing microchannels for packaging high-power electronic component, packaging structure and process Download PDF

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Publication number
WO2013091142A1
WO2013091142A1 PCT/CN2011/002157 CN2011002157W WO2013091142A1 WO 2013091142 A1 WO2013091142 A1 WO 2013091142A1 CN 2011002157 W CN2011002157 W CN 2011002157W WO 2013091142 A1 WO2013091142 A1 WO 2013091142A1
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WO
WIPO (PCT)
Prior art keywords
pad
microchannel
lead frame
power electronic
electronic component
Prior art date
Application number
PCT/CN2011/002157
Other languages
French (fr)
Chinese (zh)
Inventor
刘胜
毛章明
罗小兵
吴林
张阳
周洋
徐玲
Original Assignee
武汉飞恩微电子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉飞恩微电子有限公司 filed Critical 武汉飞恩微电子有限公司
Priority to PCT/CN2011/002157 priority Critical patent/WO2013091142A1/en
Priority to CN201180074629.5A priority patent/CN103988295B/en
Publication of WO2013091142A1 publication Critical patent/WO2013091142A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a high power electronic component, and more particularly to a lead frame pad and package structure and process for a high power electronic component package containing microchannels.
  • Insulated Gate Bipolar Transistor is a high-power semiconductor three-level device with high efficiency and switching speed.
  • IGBT Insulated Gate Bipolar Transistor
  • the widespread use of IGBT devices in electric vehicles and high-speed railway power locomotives has become a driving force in the development of the power electronics industry.
  • the development and application of IGBT devices place high demands on the weight and volume of devices.
  • Cooling components for power electronics are one of the key factors in reducing weight and volume. Air-cooled aluminum alloy heat sinks used in traditional electronic products are too bulky for automobiles and power locomotives. Therefore, the weight and volume of the liquid cooling method is more conducive to the application of high-power electronic devices in electric vehicles and high-speed railway power vehicles.
  • liquid-cooled structure of current high-power devices is placed under a direct copper-clad DBC (Direct Bonding Copper) substrate to replace the air-cooled heat sink.
  • DBC Direct Bonding Copper
  • This liquid-cooled construction is still too cumbersome for electric vehicles.
  • the current high-power electronic devices contain multiple layers of materials, their large interfacial thermal resistance results in the thermal resistance of high-power electronic devices using liquid cooling at this stage. Therefore, it is very important to develop high-power electronic device liquid cooling technology that is light, small, and low thermal resistance. The new heat dissipation technology will facilitate the development and application of high-power electronic devices.
  • An object of the present invention is to provide a lead frame pad and package structure and process for a high power electronic component package containing microchannels in view of the deficiencies in the prior art.
  • the present invention includes a lead frame type conductive pad, a pad base, a 0 type seal ring, a bolt and a nut, the lead frame type conductive pad having a top surface on which the power component is placed, a bolt hole for connecting, and a groove structure for mounting a 0-type seal ring, the pad substrate including a microchannel for liquid flow, a bolt hole for connection, and a groove structure for mounting a 0-type seal, characterized in that: The lead frame type conductive pad and the pad base are connected and fixed by using the bolt and the nut to form a microchannel capable of directly cooling the conductive pad; wherein the type 0 A seal ring is placed in the recess formed by the lead frame type conductive pad and the pad base for preventing leakage of fluid within the microchannel.
  • the diode and the IGBT device are connected to the lead frame type pad, And electrically interconnected with the lead frame pad; the diode and the IGBT device and the lead frame pins are interconnected by a wire bonding process; the diode, the IGBT device and the lead interconnect are packaged in the molding compound.
  • the leads of the lead frame extend out of the molding compound to interconnect with external circuitry.
  • the packaged leadframe pad is connected to a pad base containing microchannels by bolts, and a 0-ring seal for waterproofing is provided between the pad and the pad base.
  • the lead frame type conductive pad includes at least one drain pin, one source pin and one gate pin.
  • the cross-sectional shape of the bottom surface of the lead frame type conductive pad is semicircular, or triangular, or rectangular.
  • the top surface of the pad base has a semi-circular shape, or a triangular shape, or a rectangular shape.
  • the microchannel within the pad base contains at least one fluid inlet and one fluid outlet.
  • the thickness of the lead frame type conductive pad ranges from 0.1 mm to 0.8 mm, and the thickness of the pad base is 1.0 mm to 3.0 mm.
  • the types of microchannels in the pad base include a pin rib array type, a straight micro channel array type, a single micro channel type, and a tree bifurcated micro channel type.
  • the column rib shape of the pin rib array type microchannel includes a rectangular parallelepiped rib, a triangular prism pin rib, a cylindrical pin rib, and a hexagonal prism pin rib, and the pin rib array pattern includes a side row and a fork row.
  • the pitch of the ribs ranges from 0.05 mm to 15 mm.
  • the cross-sectional area of a single microchannel of a straight microchannel array type ranges from 0.0025 square millimeters to 9 square millimeters.
  • the cross-sectional area of a single branch of the tree-shaped bifurcated microchannel ranges from 0.0025 square millimeters to 9 square millimeters.
  • the anode of the diode is interconnected with the source of the IGBT element via a lead
  • the cathode of the diode is interconnected with the lead frame type conductive pad via a lead
  • the drain of the IGBT element is interconnected with the lead frame type conductive pad via a lead
  • the gate of the IGBT element The gate pins of the lead frame of the pole and lead frame type conductive pads are interconnected by wires.
  • the interconnection between the diode and the IGBT component uses at least three leads.
  • the interconnection between the IGBT component and the source of the leadframe employs at least three leads.
  • the present invention also provides a process for fabricating the package using a power electronic package containing a microchannel lead frame type disk, in the following steps:
  • an initial leadframe pad having a recess in which a 0-type seal is placed, a bolt hole and at least one source pin, a gate pin, and a drain connected to the pad;
  • the diode Bonding the diode to the upper surface of the lead frame pad, the diode is bonded to the lead frame pad through the conductive paste, and the negative electrode of the diode is electrically interconnected with the lead frame pad;
  • the drain of the IGBT component is electrically interconnected with the lead frame pad through the conductive paste; the wire interconnection diode and the source of the IGBT component, the IGBT component and the lead frame pad Electrical interconnection between the drain and the drain;
  • a diode, an IGBT component, a portion of the leadframe pad, and a portion of the leadframe pins are packaged in a molding compound; microvias are fabricated on the initial leadframe pads having bolt holes and corresponding pad pads with bolt holes Used for Install the groove of the O-ring;
  • the fabricated lead frame pad and the pad base are assembled, and the 0-type sealing ring is loaded into the groove of the lead frame pad and the pad base, and the size of the 0-type sealing ring is the same as the groove space.
  • the assembly between the lead frame pad and the pad base is assembled using bolts and nuts.
  • the step also includes the final pin cutting process. '
  • Figure 1A is a top plan view of one embodiment of the present invention, the device within the molding compound is indicated by a dashed line;
  • Figure 1B is a cross-sectional view taken along line B-B of the embodiment of Figure 1A;
  • Figure 1C is a cross-sectional view taken along line C-C of the embodiment of Figure 1B;
  • FIG. 2 is a plan view of a manufacturing process flow of a lead frame type pad in the embodiment of FIG. 1 and a DD cross-sectional view thereof;
  • FIG. 3 is a process flow diagram of the power device connected to the lead frame type pad in the embodiment and an FF thereof. Cross-sectional view;
  • Figure 4 Figure 3 subsequent process flow diagram and its EE cross-sectional view;
  • Figure 5 is a flow chart showing the manufacturing process of the microchannel-containing pad in the embodiment and its F-F cross-sectional view;
  • Figure 6 is a final package process step diagram of Embodiment 1;
  • Figure 7A is a top plan view of another embodiment of the present invention.
  • Figure 7B is a cross-sectional view taken along line B-B of the embodiment of Figure 7A;
  • Figure 7C is a cross-sectional view taken along line C-C of the embodiment of Figure 7B;
  • Figure 8A is a top plan view of another embodiment of the present invention.
  • Figure 8B is a cross-sectional view taken along line B-B of the embodiment of Figure 8A;
  • Figure 8C is a cross-sectional view taken along line C-C of the embodiment of Figure 8B.
  • the lead frame type conductive pad 118 and the pad base 126 are connected and fixed by bolts 124 and nuts 116 to form a microchannel capable of direct cooling of the conductive pad 118; wherein the 0-type seal 122 is placed on the lead
  • the frame-shaped conductive pad 118 is formed in a recess formed by the disk base 126 for preventing fluid in the microchannel.
  • a high power electronic component package 100 employing microvia-based leadframe pads is packaged within molding compound 102.
  • the device packaged inside the molding compound 102 is indicated by a broken line.
  • a detailed internal mechanism of a power electronic package using a leadframe pad with microchannels is shown in Figure 1B.
  • power electronic component package 100 includes a conductive pad 118 including pins 106, and a pad pad 126 for liquid-cooled microchannels.
  • Diode 112 and IGBT 114 are bonded to the upper surface of conductive pad 118.
  • the anode of diode 112 is interconnected with the source of IGBT 114 via lead 110
  • the cathode of diode 112 is interconnected with leadframe conductive pad 118 via lead 110
  • the drain of IGBT 114 is interconnected with leadframe conductive pad 118 via lead 110.
  • the gate of IGBT 114 is interconnected with the gate pin 108 of the leadframe of leadframe conductive pad 118 via lead 110.
  • the interconnection between diode 112 and IGBT 114 employs at least three leads.
  • the interconnection between the IGBT 1 14 and the lead frame source uses at least three leads.
  • a conductive pad 118 to which the power electronic component is mounted is coupled to the disk base 126 by a bolt 124 and a nut 116.
  • a Type 0 seal 122 for preventing leakage is placed between the conductive pad 118 and the pad base 126.
  • Type 0 seals 122 can be fitted with rubber seals.
  • Conductive pad 118 and pad base 126 have recesses for mounting Type 0 seal 122, as shown in Figure 1C.
  • the microchannel structure of pad base 126 will be given in Figure 1C.
  • the lead frame type conductive pad 118 has a thickness ranging from 0.1 mm to 0.8 mm.
  • the pad base 126 has a thickness ranging from 1.0 mm to 3.0 mm.
  • the pad base 126 has a microchannel structure for liquid cooling.
  • the microchannel contains a liquid outlet and an inlet.
  • the top of the pad base 126 is machined with a 0-ring seal.
  • the cross-sectional shape of the bottom surface of the lead frame type conductive pad 118 is semicircular, or triangular, or rectangular.
  • Pad Base 126 The top groove has a semi-circular shape, or a triangular shape, or a rectangular shape.
  • the groove of this embodiment is semicircular.
  • FIG. 2 shows the process flow for manufacturing a lead frame type tray.
  • the process is illustrated using a top view and a D-D profile.
  • the process begins with an initial plate 202.
  • Plate 202 can be fabricated from any suitable electrically conductive material.
  • the plate 202 is made of copper.
  • the step of forming a structure 206 for mounting the 0-type seal ring 122 is formed on the bottom surface 202 of the plate by photolithography.
  • structure 206 is indicated by a dashed line.
  • Step 208 can be used to create lead pins 104, 106, 108 and bolt holes 201 in a stamped manner.
  • leadframe pad 212 and structure 206 for mounting a 0-ring can be fabricated.
  • step 302 diode 304 and IGBT 306 are bonded to the upper surface of leadframe conductive pad 212 by conductive paste 308 and form assembly 310.
  • the conductive paste 308 can be any suitable tantalum or conductive resin.
  • Step 302 can be accomplished by a solder wire process.
  • the diode 304 and the IGBT 306, the IGBT 306 and the source pin 104, and the gate pin 108 are bonded by a wire 110. The way of interconnection is achieved, and finally component 314 is formed.
  • the molding compound 102 is used to partially package assembly 314 to form assembly 402.
  • the molding compound can be any suitable thermosetting material.
  • the molding compound is made of a polymer resin material, but any suitable material may be employed as the molding compound in this embodiment.
  • the molding compound 102 encapsulates the diode tube 304, the IGBT 306, the lead interconnect 110 and a portion of the source pin 104, the drain pin 106, and the gate pin 108. Portions of the pins extend beyond the molding compound 102.
  • step 404 component 406 is finally obtained by cutting and pin correction.
  • FIG. 5 is a process flow 500 for fabricating a microchannel padded submount.
  • Process 500 will be described in a top view and a cross-sectional view F-F.
  • Process flow 500 begins with a plate 502.
  • Plate 502 can be fabricated from any suitable electrically conductive material.
  • the flat plate 502 of this embodiment is made of copper.
  • the bolt holes 506 can be formed by stamping.
  • the microchannel 510 can be fabricated by photolithography and wet etching.
  • the microchannels in the pad base include at least one fluid inlet and one fluid outlet.
  • the microchannel 510 of this embodiment includes a fluid inlet 512 and a fluid outlet 514.
  • the microchannel 510 contains a microcylinder 516.
  • the cross-sectional shapes of the microchannel array type microchannels include a triangle, a rectangle, a semicircle, and a trapezoid.
  • the micro-pillars are in the shape of a rectangular parallelepiped and are arranged in a row.
  • the type of microchannel of this embodiment is a direct microchannel array.
  • the cross-sectional shape of the microchannel of this embodiment is a rectangle.
  • the micro-cylinder can adopt any suitable shape, such as a triangular prism, a cylinder, a hexahedron, a hexagonal prism, and the like.
  • the micro-pillars 516 can also be arranged in a row of forks.
  • the recess 520 for mounting the Type 0 seal can be processed by photolithography and wet etching. After the process 500 is completed, a pad base 522 containing microchannels can be obtained.
  • the cross-sectional area of a single microchannel of a straight microchannel array type ranges from 0.0025 square millimeters to 9 square millimeters.
  • Figure 6 shows the assembly flow for assembly 406, type 0 seal 122, and microchannel pad base 522. All components are represented in a cutaway view.
  • a Type 0 seal is placed in the space formed by the grooves 206 and 520.
  • the assembly 406 is secured to the microchannel-containing pad base 522 by bolts 124 and nuts 116. Therefore, the microchannel containing disk base 522 can be replaced during use.
  • 100 is a power electronic package finished with a lead frame type soldering pad.
  • the second embodiment is the same as the first embodiment except that the molding positions of the molding compound are different. See Figure 7,
  • Embodiment 2 Unlike the power electronic package 100 illustrated in FIG. 1A, the positions of the bolts of the power electronic package 700 of FIG. 7A are not disposed below the pins 704, 708. Both the lead frame pad 702 and the microchannel pad base 712 in FIGS. 7B and 7C are expanded with a space for bolting. This is the same as the one in Figure 1B and Figure 1C. The wire frame pads 1 18 are different from the micro channel pad pads 126.
  • the third embodiment is the same as the first embodiment and the second embodiment except that the form of the microchannel in the pad base is different from that in the first embodiment and the second embodiment.
  • the microchannels 804 in the pad base 806 of the power electronics package 800 are rectangular channels.
  • the fluid inlet 808 and fluid outlet 810 are placed at the same end of the pad base 806, which is different from the previous two embodiments.
  • the left end bolt holes are placed in the middle to provide space for the fluid inlet 808 and fluid outlet 810.
  • the fourth embodiment is the same as the first embodiment except that the type of the microchannel is a pin rib array type, the array of the pin ribs is in a row, the shape of the column rib is a cylindrical pin rib, and the pitch of the pin rib array type microchannel is rib pitch.
  • the range is from 0.05 mm to 15 mm.
  • Embodiment 5 is the same as Embodiment 1, except that the type of the microchannel is a single microchannel type, the cross section shape of the microchannel is a rectangle, and the cross-sectional area of the microchannel of the single microchannel ranges from 0.0025 mm 2 to 9 mm 2 . .

Abstract

Provided are a lead frame pad containing microchannels for packaging a high-power electronic component, a packaging structure and a packaging process. The lead frame pad comprises: a lead frame-type conductive pad (118), a pad base (126), an O-shaped sealing ring (122), and a power component (114). The power component (114) is disposed on the top surface of the lead frame-type conductive pad (118), the top of the power component (114) and the top of a pin (106) are packaged inside an insulation module (102), the pad base (126) contains microchannels for a liquid to flow, the O-shaped sealing ring (122) is mounted between the conductive pad (118) and the pad base (126), bolt holes for connection are provided on both the lead frame-type conductive pad (118) and the pad base (126), the lead frame-type conductive pad is fixedly connected to the pad base through a bolt (124) and a nut (116), and the O-shaped sealing ring (122) is placed between the lead frame-type conductive pad (118) and a groove corresponding to the pad base (126).

Description

用于髙功率电子元件封装含微通道的引线框架焊盘及封装结构和工艺 技术领域  Lead frame pad with microchannel for germanium power electronic component package and package structure and process
本发明涉及一种高功率的电子元器件,特别涉及一种用于高功率电子元件封装含微 通道的引线框架焊盘及封装结构和工艺。  The present invention relates to a high power electronic component, and more particularly to a lead frame pad and package structure and process for a high power electronic component package containing microchannels.
背景技术 Background technique
绝缘栅双极型晶体管 IGBT(Insulated Gate Bipolar Transistor)是一种高功率的半导体三 级器件，具有很高的效率和开关速度。 IGBT器件在电动汽车及高速铁路动力机车中的广 泛应用已经成为功率电子工业发展的驱动力。 IGBT器件的发展和应用对器件的重量和体 积的减小提出了较高的要求。而功率电子产品的冷却部件是其重量和体积减小的关键因素 之一。传统电子产品中应用到的空冷铝合金热沉对于汽车及动力机车而言过于笨重。因此， 重量和体积更小的液体冷却方式更有利于高功率电子器件在电动汽车及高速铁路动力机 车上的应用。  Insulated Gate Bipolar Transistor (IGBT) is a high-power semiconductor three-level device with high efficiency and switching speed. The widespread use of IGBT devices in electric vehicles and high-speed railway power locomotives has become a driving force in the development of the power electronics industry. The development and application of IGBT devices place high demands on the weight and volume of devices. Cooling components for power electronics are one of the key factors in reducing weight and volume. Air-cooled aluminum alloy heat sinks used in traditional electronic products are too bulky for automobiles and power locomotives. Therefore, the weight and volume of the liquid cooling method is more conducive to the application of high-power electronic devices in electric vehicles and high-speed railway power vehicles.
但是， 目前的高功率器件的液冷结构被放置在直接覆铜 DBC ( Direct Bonding Copper) 基板下方以取代空冷的热沉。 这种液冷的结构对于电动汽车仍然过于笨重。 另外， 因为现 阶段高功率电子器件含有多层的材料，其较大的界面热阻导致现阶段采用液冷的高功率电 子器件的热阻仍然较髙。 因此， 开发轻便、 小型、 低热阻的高功率电子器件液冷技术十分 重要， 新型的散热技术将有利于高功率电子器件的发展和应用。  However, the liquid-cooled structure of current high-power devices is placed under a direct copper-clad DBC (Direct Bonding Copper) substrate to replace the air-cooled heat sink. This liquid-cooled construction is still too cumbersome for electric vehicles. In addition, because the current high-power electronic devices contain multiple layers of materials, their large interfacial thermal resistance results in the thermal resistance of high-power electronic devices using liquid cooling at this stage. Therefore, it is very important to develop high-power electronic device liquid cooling technology that is light, small, and low thermal resistance. The new heat dissipation technology will facilitate the development and application of high-power electronic devices.
发明内容 Summary of the invention
本发明的目的是针对已有技术中存在的缺陷，提供一种用于高功率电子元件封装含微 通道的引线框架焊盘及封装结构和工艺。  SUMMARY OF THE INVENTION An object of the present invention is to provide a lead frame pad and package structure and process for a high power electronic component package containing microchannels in view of the deficiencies in the prior art.
本发明包括一个引线框架式导电焊盘、一个焊盘底座、 0型密封圈、 螺栓和螺帽， 所 述的引线框架式导电悍盘具有放置功率元件的顶面、 用于连接的螺栓孔和用于安装 0型 密封圈的凹槽结构， 所述的焊盘基底含有用于液体流动的微通道、 用于连接的螺栓孔和 用于安装 0型密封圈的凹槽结构， 其特征在于： 所述的引线框架式导电焊盘与所述的焊 盘底座使用所述的螺栓和螺帽进行连接固定， 形成能对导电焊盘进行直接冷却的流体流 动的微通道； 其中所述的 0型密封圈被放置在所述的引线框架式导电焊盘与焊盘底座形 成的凹槽内， 用于防止微通道内的流体的泄露。  The present invention includes a lead frame type conductive pad, a pad base, a 0 type seal ring, a bolt and a nut, the lead frame type conductive pad having a top surface on which the power component is placed, a bolt hole for connecting, and a groove structure for mounting a 0-type seal ring, the pad substrate including a microchannel for liquid flow, a bolt hole for connection, and a groove structure for mounting a 0-type seal, characterized in that: The lead frame type conductive pad and the pad base are connected and fixed by using the bolt and the nut to form a microchannel capable of directly cooling the conductive pad; wherein the type 0 A seal ring is placed in the recess formed by the lead frame type conductive pad and the pad base for preventing leakage of fluid within the microchannel.
本发明应用于高功率电子封装时， 二极管和 IGBT器件悍接在引线框架式的焊盘上， 并与引线框架式焊盘进行电互联；二极管与 IGBT器件及引线框架引脚之间通过引线键合 工艺实现互联； 二极管、 IGBT器件和引线互联被封装在模塑料中。 引线框架的引脚伸 出模塑料外以便与外部电路互联。 封装好的引线框架式焊盘通过螺栓与一个含有微通道 的焊盘底座连接， 焊盘与焊盘底座之间含有一个用于防水的 0型密封圈。 When the invention is applied to a high power electronic package, the diode and the IGBT device are connected to the lead frame type pad, And electrically interconnected with the lead frame pad; the diode and the IGBT device and the lead frame pins are interconnected by a wire bonding process; the diode, the IGBT device and the lead interconnect are packaged in the molding compound. The leads of the lead frame extend out of the molding compound to interconnect with external circuitry. The packaged leadframe pad is connected to a pad base containing microchannels by bolts, and a 0-ring seal for waterproofing is provided between the pad and the pad base.
所述的引线框架式导电焊盘包含至少一个漏极引脚、 一个源极引脚和一个门极引脚。 的引线框架式导电焊盘底面凹槽的截面形状为半圆形， 或三角形， 或矩形。 焊盘底座顶 面凹槽的截面形状为半圆形， 或三角形， 或矩形。 焊盘底座内的微通道包含至少一个流 体入口和一个流体出口。 引线框架式导电焊盘的厚度范围是 0.1毫米至 0.8毫米， 悍盘底 座的厚度范围是 1.0毫米至 3.0毫米。  The lead frame type conductive pad includes at least one drain pin, one source pin and one gate pin. The cross-sectional shape of the bottom surface of the lead frame type conductive pad is semicircular, or triangular, or rectangular. The top surface of the pad base has a semi-circular shape, or a triangular shape, or a rectangular shape. The microchannel within the pad base contains at least one fluid inlet and one fluid outlet. The thickness of the lead frame type conductive pad ranges from 0.1 mm to 0.8 mm, and the thickness of the pad base is 1.0 mm to 3.0 mm.
所述的焊盘底座内的微通道的类型包括针肋阵列型、 直微通道阵列型、 单微通道型 和树形分叉微通道型。  The types of microchannels in the pad base include a pin rib array type, a straight micro channel array type, a single micro channel type, and a tree bifurcated micro channel type.
针肋阵列型微通道的柱肋形状包括长方体针肋、 三棱柱针肋、 圆柱针肋和六棱柱针肋， 针肋阵列样式包括顺排和叉排方式。 针肋间距的范围是 0.05毫米到 15毫米。  The column rib shape of the pin rib array type microchannel includes a rectangular parallelepiped rib, a triangular prism pin rib, a cylindrical pin rib, and a hexagonal prism pin rib, and the pin rib array pattern includes a side row and a fork row. The pitch of the ribs ranges from 0.05 mm to 15 mm.
直微通道阵列型的单个微通道的截面面积的范围是 0.0025平方毫米至 9平方毫米。 树形分叉型微通道的单个分支的截面面积的范围是 0.0025平方毫米至 9平方毫米。 二极管的正极与所述的 IGBT元件的源极经引线互联，二极管的负极与引线框架式导 电焊盘经引线互联， IGBT元件的漏极与引线框架式导电焊盘经引线互联， IGBT元件 的门极与引线框架式导电焊盘的引线框架的门极引脚经引线互联。二极管与 IGBT元件之 间的互联采用至少三根引线。 IGBT元件与引线框架源极之间的互联采用至少三根引线。  The cross-sectional area of a single microchannel of a straight microchannel array type ranges from 0.0025 square millimeters to 9 square millimeters. The cross-sectional area of a single branch of the tree-shaped bifurcated microchannel ranges from 0.0025 square millimeters to 9 square millimeters. The anode of the diode is interconnected with the source of the IGBT element via a lead, the cathode of the diode is interconnected with the lead frame type conductive pad via a lead, the drain of the IGBT element is interconnected with the lead frame type conductive pad via a lead, and the gate of the IGBT element The gate pins of the lead frame of the pole and lead frame type conductive pads are interconnected by wires. The interconnection between the diode and the IGBT component uses at least three leads. The interconnection between the IGBT component and the source of the leadframe employs at least three leads.
本发明还提供了制造采用含微通道引线框架式悍盘的功率电子封装的工艺所述封装的 工艺， 依次步骤如下：  The present invention also provides a process for fabricating the package using a power electronic package containing a microchannel lead frame type disk, in the following steps:
获得初始的引线框架式焊盘， 所述焊盘具有放置 0型密封圈的凹槽， 螺栓孔和至少 一个源极引脚、 一个门极引脚和一个与焊盘相连的漏极；  Obtaining an initial leadframe pad having a recess in which a 0-type seal is placed, a bolt hole and at least one source pin, a gate pin, and a drain connected to the pad;
粘结二极管至引线框架式焊盘上表面， 二极管通过导电胶与引线框架式焊盘粘结， 二极管 的负极与引线框架式焊盘电互联； Bonding the diode to the upper surface of the lead frame pad, the diode is bonded to the lead frame pad through the conductive paste, and the negative electrode of the diode is electrically interconnected with the lead frame pad;
粘结 IGBT元件至引线框架式悍盘上表面， IGBT元件的漏极通过导电胶与引线框架式 焊盘电互联； 引线互联二极管与所述 IGBT元件， IGBT元件与引线框架式焊盘的源极和漏 极之间的电互联；  Bonding the IGBT component to the upper surface of the lead frame type disk, the drain of the IGBT component is electrically interconnected with the lead frame pad through the conductive paste; the wire interconnection diode and the source of the IGBT component, the IGBT component and the lead frame pad Electrical interconnection between the drain and the drain;
将二极管、 IGBT元件、一部分引线框架式焊盘和一部分引线框架的引脚封装在模塑料内； 在具有螺栓孔的初始引线框架式焊盘以及对应带螺栓孔的焊盘底座上制造微通道和用于 安装 O型密封圈的凹槽； A diode, an IGBT component, a portion of the leadframe pad, and a portion of the leadframe pins are packaged in a molding compound; microvias are fabricated on the initial leadframe pads having bolt holes and corresponding pad pads with bolt holes Used for Install the groove of the O-ring;
装配所述加工好的引线框架式焊盘及焊盘底座， 将 0型密封圈装入引线框架式焊盘 和焊盘底座上的凹槽内， 0型密封圈的大小与凹槽空间相同，引线框架式焊盘和焊盘底座 之间的装配采用螺栓和螺帽装配。 步骤还包含最后的引脚切割工艺过程。 '  The fabricated lead frame pad and the pad base are assembled, and the 0-type sealing ring is loaded into the groove of the lead frame pad and the pad base, and the size of the 0-type sealing ring is the same as the groove space. The assembly between the lead frame pad and the pad base is assembled using bolts and nuts. The step also includes the final pin cutting process. '
本发明的优点如下： The advantages of the invention are as follows:
1 ) 对焊接有芯片的焊盘直接冷却， 具有更好的冷却效率；  1) Directly cooling the pad with the chip soldered, with better cooling efficiency;
2 ) 减少封装所用的材料层数， 有利于降低髙功率电子封装内部的界面热阻； 2) reducing the number of layers of materials used in the package, which is beneficial to reducing the interface thermal resistance inside the 髙 power electronic package;
3 ) 可显著降低高功率电子封装产品的尺寸； 3) can significantly reduce the size of high-power electronic packaging products;
4 ) 采用螺栓连接， 易于更换， 维护方便。  4) Bolted for easy replacement and easy maintenance.
阱图说明 Well diagram description
图 1A 本发明的一个实施例的顶视图， 模塑料内的器件采用虚线表示；  Figure 1A is a top plan view of one embodiment of the present invention, the device within the molding compound is indicated by a dashed line;
图 1B 图 1A实施例的 B-B剖视图；  Figure 1B is a cross-sectional view taken along line B-B of the embodiment of Figure 1A;
图 1C 图 1B实施例的 C-C剖视图；  Figure 1C is a cross-sectional view taken along line C-C of the embodiment of Figure 1B;
图 2 图 1实施例中的引线框架式焊盘的制造工艺流程的俯视图及其 D-D剖视图； 图 3 图 1实施例中的功率器件悍接在引线框架式焊盘上的工艺流图及其 F-F剖视图； 图 4 图 3后续的工艺流程图及其 E-E剖视图；  2 is a plan view of a manufacturing process flow of a lead frame type pad in the embodiment of FIG. 1 and a DD cross-sectional view thereof; FIG. 3 is a process flow diagram of the power device connected to the lead frame type pad in the embodiment and an FF thereof. Cross-sectional view; Figure 4 Figure 3 subsequent process flow diagram and its EE cross-sectional view;
图 5 图 1实施例中的含微通道焊盘的制造工艺流程图及其 F-F剖视图；  Figure 5 is a flow chart showing the manufacturing process of the microchannel-containing pad in the embodiment and its F-F cross-sectional view;
图 6 实施例一最终的封装工艺步骤图；  Figure 6 is a final package process step diagram of Embodiment 1;
图 7A是本发明另一实施例的顶视图；  Figure 7A is a top plan view of another embodiment of the present invention;
图 7B是图 7A实施例的 B-B剖视图；  Figure 7B is a cross-sectional view taken along line B-B of the embodiment of Figure 7A;
图 7C是图 7B实施例的 C-C剖视图；  Figure 7C is a cross-sectional view taken along line C-C of the embodiment of Figure 7B;
图 8A是本发明另一实施例的顶视图；  Figure 8A is a top plan view of another embodiment of the present invention;
图 8B是图 8A实施例的 B-B剖视图；  Figure 8B is a cross-sectional view taken along line B-B of the embodiment of Figure 8A;
图 8C是图 8B实施例的 C-C剖视图。  Figure 8C is a cross-sectional view taken along line C-C of the embodiment of Figure 8B.
具体实施方式 detailed description
实施例一 Embodiment 1
下面结合附图进一步说明本发明的实施例：  Embodiments of the present invention are further described below in conjunction with the accompanying drawings:
引线框架式导电焊盘 118与焊盘底座 126采用螺栓 124和螺帽 116进行连接固定， 形成能对导电焊盘 118进行直接冷却的流体流动的微通道； 其中 0型密封圈 122被放置 在引线框架式导电焊盘 118与悍盘底座 126形成的凹槽内， 用于防止微通道内的流体的 泄露。 采用含微通道的引线框架式焊盘的高功率电子元件封装 100封装在模塑料 102内。 为便于说明， 封装在模塑料 102内部的器件使用虚线表示。 采用含微通道的引线框架式 焊盘的功率电子封装的详细内部机构如图 1B所示。 The lead frame type conductive pad 118 and the pad base 126 are connected and fixed by bolts 124 and nuts 116 to form a microchannel capable of direct cooling of the conductive pad 118; wherein the 0-type seal 122 is placed on the lead The frame-shaped conductive pad 118 is formed in a recess formed by the disk base 126 for preventing fluid in the microchannel. Give way. A high power electronic component package 100 employing microvia-based leadframe pads is packaged within molding compound 102. For convenience of explanation, the device packaged inside the molding compound 102 is indicated by a broken line. A detailed internal mechanism of a power electronic package using a leadframe pad with microchannels is shown in Figure 1B.
如图 1B所示， 功率电子元件封装 100包括含有引脚 106的导电焊盘 118， 和含有用 于液冷微通道的焊盘底座 126。 二极管 112和 IGBT 114粘结在导电焊盘 118的上表面。 二极管 112的正极与 IGBT 114的源极经引线 110互联， 二极管 112的负极与引线框架式 导电焊盘 118经引线 110互联， IGBT 114的漏极与引线框架式导电焊盘 118经引线 110 互联， IGBT 114的门极与引线框架式导电焊盘 118的引线框架的门极引脚 108经引线 110互联。 二极管 112与 IGBT 114之间的互联采用至少三根引线。 IGBT 1 14与引线框架 源极之间的互联采用至少三根引线。安装有功率电子元件的导电焊盘 118与悍盘底座 126 通过螺栓 124和螺帽 116进行连接。 在导电焊盘 118与焊盘底座 126之间放置有用于防 止泄露的 0型密封圈 122。 0型密封圈 122可以釆用橡胶密封圈。导电焊盘 118和焊盘底 座 126具有安装 0型密封圈 122的凹槽，如图 1C所示。焊盘底座 126的微通道结构将会 在图 1C中给出。 引线框架式导电焊盘 118的厚度范围是 0.1毫米至 0.8毫米。 焊盘底座 126的厚度范围是 1.0毫米至 3.0毫米。  As shown in FIG. 1B, power electronic component package 100 includes a conductive pad 118 including pins 106, and a pad pad 126 for liquid-cooled microchannels. Diode 112 and IGBT 114 are bonded to the upper surface of conductive pad 118. The anode of diode 112 is interconnected with the source of IGBT 114 via lead 110, the cathode of diode 112 is interconnected with leadframe conductive pad 118 via lead 110, and the drain of IGBT 114 is interconnected with leadframe conductive pad 118 via lead 110. The gate of IGBT 114 is interconnected with the gate pin 108 of the leadframe of leadframe conductive pad 118 via lead 110. The interconnection between diode 112 and IGBT 114 employs at least three leads. The interconnection between the IGBT 1 14 and the lead frame source uses at least three leads. A conductive pad 118 to which the power electronic component is mounted is coupled to the disk base 126 by a bolt 124 and a nut 116. A Type 0 seal 122 for preventing leakage is placed between the conductive pad 118 and the pad base 126. Type 0 seals 122 can be fitted with rubber seals. Conductive pad 118 and pad base 126 have recesses for mounting Type 0 seal 122, as shown in Figure 1C. The microchannel structure of pad base 126 will be given in Figure 1C. The lead frame type conductive pad 118 has a thickness ranging from 0.1 mm to 0.8 mm. The pad base 126 has a thickness ranging from 1.0 mm to 3.0 mm.
如图 1C所示， 焊盘底座 126具有用于液冷的微通道结构。 该微通道含有液体出口和 进口。 焊盘底座 126的顶部加工有放置 0型密封圈的结构。 引线框架式导电焊盘 118底 面凹槽的截面形状为半圆形， 或三角形， 或矩形。 焊盘底座 126顶面凹槽的截面形状为 半圆形， 或三角形， 或矩形。 本实施例的凹槽为半圆形。  As shown in Fig. 1C, the pad base 126 has a microchannel structure for liquid cooling. The microchannel contains a liquid outlet and an inlet. The top of the pad base 126 is machined with a 0-ring seal. The cross-sectional shape of the bottom surface of the lead frame type conductive pad 118 is semicircular, or triangular, or rectangular. Pad Base 126 The top groove has a semi-circular shape, or a triangular shape, or a rectangular shape. The groove of this embodiment is semicircular.
图 2所示的是制造引线框架式悍盘的工艺流程。 该工艺流程采用顶视图和 D-D剖面 图进行说明。工艺流程开始于一块初始平板 202。平板 202可以采用任何合适的导电材料 制造。 平板 202采用铜制造。 步骤使用光刻的方法在平板底面 202形成用于安装 0型密 封圈 122的结构 206。 为便于说明， 结构 206采用虚线表示。 步骤 208可采用冲压的方式 产生引线框架的引脚 104、 106、 108和螺栓孔 201。 在步骤 204和 208完成后， 可以制得 引线框架式焊盘 212和用于安装 0型密封圈的结构 206。  Figure 2 shows the process flow for manufacturing a lead frame type tray. The process is illustrated using a top view and a D-D profile. The process begins with an initial plate 202. Plate 202 can be fabricated from any suitable electrically conductive material. The plate 202 is made of copper. The step of forming a structure 206 for mounting the 0-type seal ring 122 is formed on the bottom surface 202 of the plate by photolithography. For ease of illustration, structure 206 is indicated by a dashed line. Step 208 can be used to create lead pins 104, 106, 108 and bolt holes 201 in a stamped manner. After completion of steps 204 and 208, leadframe pad 212 and structure 206 for mounting a 0-ring can be fabricated.
图 3所示是在引线框架式导电焊盘 212表面安装功率元件的工艺流程 300。 工艺流程 300将使用顶视图和剖视图 E-E进行说明。 在步骤 302中， 二极管 304和 IGBT 306通过 导电胶 308被粘结在引线框架式导电焊盘 212上表面， 并形成组件 310。导电胶 308可以 是任何合适的悍料或导电树脂。 步骤 302可以通过软焊线工艺实现。 步骤 312中， 二极 管 304与 IGBT 306， IGBT 306 与源极引脚 104、 门极引脚 108之间通过引线 110键合 互联的方式实现， 最终形成组件 314。 3 is a process flow 300 for mounting a power component on a surface of a leadframe conductive pad 212. Process 300 will be described using a top view and a cross-sectional view EE. In step 302, diode 304 and IGBT 306 are bonded to the upper surface of leadframe conductive pad 212 by conductive paste 308 and form assembly 310. The conductive paste 308 can be any suitable tantalum or conductive resin. Step 302 can be accomplished by a solder wire process. In step 312, the diode 304 and the IGBT 306, the IGBT 306 and the source pin 104, and the gate pin 108 are bonded by a wire 110. The way of interconnection is achieved, and finally component 314 is formed.
图 4是图 3后续的工艺流程图，在步骤 400中，模塑料 102被用于部分封装组件 314， 形成组件 402。模塑料可以是任何合适的热硬化性材料。 一般， 模塑料采用高分子树脂材 料， 但是本实施例中可采用任何合适的材料作为模塑料。 模塑料 102将二.极管 304、 IGBT 306、 引线互联 110和部分源极引脚 104, 漏极引脚 106及门极引脚 108进行封装。 部分 引脚伸出模塑料 102之外。  4 is a subsequent process flow diagram of FIG. 3 in which molding compound 102 is used to partially package assembly 314 to form assembly 402. The molding compound can be any suitable thermosetting material. Generally, the molding compound is made of a polymer resin material, but any suitable material may be employed as the molding compound in this embodiment. The molding compound 102 encapsulates the diode tube 304, the IGBT 306, the lead interconnect 110 and a portion of the source pin 104, the drain pin 106, and the gate pin 108. Portions of the pins extend beyond the molding compound 102.
在步骤 404的结尾工艺中， 通过切割和引脚的矫正， 最终得到组件 406。  In the end process of step 404, component 406 is finally obtained by cutting and pin correction.
图 5是制造含微通道焊盘底座的工艺流程 500。 工艺 500将采用俯视图和剖视图 F-F 进行说明。工艺流程 500开始于一平板 502。平板 502可以采用任何合适的导电材料制造。 本实施例的平板 502采用铜制造。 步骤 504中， 螺栓孔 506可通过冲压形成。 步骤 508 可以采用光刻和湿法刻蚀的方法制造微通道 510，焊盘底座内的微通道包含至少一个流体 入口和一个流体出口。本实施例的微通道 510包含流体入口 512和流体出口 514。微通道 510内含有微柱体 516。 直微通道阵列型的微通道的截面形状包括三角形、 矩形、 半圆形 和梯形。 在工艺 500中， 微柱体的形状为长方体形， 并且采用顺排的方式排列。 本实施 例微通道的类型为直微通道阵列。 本实施例的微通道的截面形状为矩形。 实际应用中， 微柱体可以采用任意合适的形状， 如三棱柱、 圆柱、 六面体、 六棱柱等一切可能的形状。 同样， 微柱体 516也可以采用叉排的方式排列。 在工艺 500的步骤 518中， 用于安装 0 型密封圈的凹槽 520可以采用光刻和湿法刻蚀的方法加工。 在完成工艺过程 500后， 可 以获得含微通道的焊盘底座 522。 直微通道阵列型的单个微通道的截面面积的范围是 0.0025平方毫米至 9平方毫米。  Figure 5 is a process flow 500 for fabricating a microchannel padded submount. Process 500 will be described in a top view and a cross-sectional view F-F. Process flow 500 begins with a plate 502. Plate 502 can be fabricated from any suitable electrically conductive material. The flat plate 502 of this embodiment is made of copper. In step 504, the bolt holes 506 can be formed by stamping. Step 508 The microchannel 510 can be fabricated by photolithography and wet etching. The microchannels in the pad base include at least one fluid inlet and one fluid outlet. The microchannel 510 of this embodiment includes a fluid inlet 512 and a fluid outlet 514. The microchannel 510 contains a microcylinder 516. The cross-sectional shapes of the microchannel array type microchannels include a triangle, a rectangle, a semicircle, and a trapezoid. In the process 500, the micro-pillars are in the shape of a rectangular parallelepiped and are arranged in a row. The type of microchannel of this embodiment is a direct microchannel array. The cross-sectional shape of the microchannel of this embodiment is a rectangle. In practical applications, the micro-cylinder can adopt any suitable shape, such as a triangular prism, a cylinder, a hexahedron, a hexagonal prism, and the like. Similarly, the micro-pillars 516 can also be arranged in a row of forks. In step 518 of process 500, the recess 520 for mounting the Type 0 seal can be processed by photolithography and wet etching. After the process 500 is completed, a pad base 522 containing microchannels can be obtained. The cross-sectional area of a single microchannel of a straight microchannel array type ranges from 0.0025 square millimeters to 9 square millimeters.
图 6所示的是组件 406、 0型密封圈 122和含微通道焊盘底座 522的装配流程。 所有 的组件都采用剖视图表示。 在装配流程 600中， 0型密封圈被放置在由凹槽 206和 520 形成的空间中。 组件 406与含微通道焊盘底座 522通过螺栓 124和螺帽 116进行连接固 定。 因此， 含微通道悍盘底座 522在使用过程中可以进行更换。 100是采用引线框架式焊 盘的功率电子封装成品。  Figure 6 shows the assembly flow for assembly 406, type 0 seal 122, and microchannel pad base 522. All components are represented in a cutaway view. In the assembly process 600, a Type 0 seal is placed in the space formed by the grooves 206 and 520. The assembly 406 is secured to the microchannel-containing pad base 522 by bolts 124 and nuts 116. Therefore, the microchannel containing disk base 522 can be replaced during use. 100 is a power electronic package finished with a lead frame type soldering pad.
实施例二 Embodiment 2
实施例二与实施例一相同，所不同的是模塑料的封装位置不同。 参见图 7，  The second embodiment is the same as the first embodiment except that the molding positions of the molding compound are different. See Figure 7,
实施例二不同于图 1A所示的功率电子封装 100,图 7A中的功率电子封装 700的螺栓 的位置并没有设置在引脚 704,708的下方。图 7B和图 7C中的引线框架式焊盘 702和含微 通道焊盘底座 712的两侧均扩展有用于螺栓连接的空间。 这一点与图 1B和图 1C中的引 线框架式焊盘 1 18和含微通道焊盘底座 126不同。 Embodiment 2 Unlike the power electronic package 100 illustrated in FIG. 1A, the positions of the bolts of the power electronic package 700 of FIG. 7A are not disposed below the pins 704, 708. Both the lead frame pad 702 and the microchannel pad base 712 in FIGS. 7B and 7C are expanded with a space for bolting. This is the same as the one in Figure 1B and Figure 1C. The wire frame pads 1 18 are different from the micro channel pad pads 126.
实施例三 Embodiment 3
实施例三与实施例一、 实施例二相同，所不同的是焊盘底座内的微通道的形式与实施 例一、实施例二中的不同。功率电子封装 800中焊盘底座 806内的微通道 804为矩形通道。 同时， 流体的入口 808和流体出口 810被放置在焊盘底座 806的同一端， 这一点与前述两 种实施例均不同。在图 8所示的功率电子封装中， 左端的螺栓孔被设置在中间以便为流体 的入口 808和流体出口 810提供空间。  The third embodiment is the same as the first embodiment and the second embodiment except that the form of the microchannel in the pad base is different from that in the first embodiment and the second embodiment. The microchannels 804 in the pad base 806 of the power electronics package 800 are rectangular channels. At the same time, the fluid inlet 808 and fluid outlet 810 are placed at the same end of the pad base 806, which is different from the previous two embodiments. In the power electronics package shown in Figure 8, the left end bolt holes are placed in the middle to provide space for the fluid inlet 808 and fluid outlet 810.
实施例四 Embodiment 4
实施例四与实施例一相同，所不同的是微通道的类型为针肋阵列型，针肋阵列样式为 顺排，柱肋形状为圆柱针肋，针肋阵列型微通道的针肋间距的范围是 0.05毫米到 15毫米。 实施例五  The fourth embodiment is the same as the first embodiment except that the type of the microchannel is a pin rib array type, the array of the pin ribs is in a row, the shape of the column rib is a cylindrical pin rib, and the pitch of the pin rib array type microchannel is rib pitch. The range is from 0.05 mm to 15 mm. Embodiment 5
实施例五与实施例一相同，所不同的是微通道的类型为单微通道型， 微通道的截面形 状为矩形， 单微通道的微通道的截面面积的范围是 0.0025平方毫米至 9平方毫米。  Embodiment 5 is the same as Embodiment 1, except that the type of the microchannel is a single microchannel type, the cross section shape of the microchannel is a rectangle, and the cross-sectional area of the microchannel of the single microchannel ranges from 0.0025 mm 2 to 9 mm 2 . .

Claims

1. 一种用于高功率电子元件封装的含微通道的引线框架焊盘，包括一个引线框架 式导电焊盘、 一个焊盘底座、 0型密封圈、 螺栓和螺帽， 所述的引线框架式导 电焊盘具有放置功率元件的顶面、用于连接的螺栓孔和用于安装 0型密封圈的 凹槽结构， 所述的悍盘基底含有用于液体流动的微通道、 用于连接的螺栓孔和 用于安装 o型密封圈的凹槽结构， 其特征在于： 所述的引线框架式导电焊盘与 所述的焊盘底座使用螺栓和螺帽进行连接固定， 形成能对导电焊盘进行直接冷 却的流体流动的微通道； 其中所述的 0型密封圈被放置在所述的引线框架式导 电悍盘与焊盘底座形成的凹槽内， 用于防止微通道内的流体的泄露。 A microchannel-containing lead frame pad for a high power electronic component package comprising a lead frame type conductive pad, a pad pad, a 0 type seal ring, a bolt and a nut, and the lead frame The conductive pad has a top surface on which the power component is placed, a bolt hole for connection, and a groove structure for mounting a type 0 seal, the tray substrate containing microchannels for liquid flow, for connection a bolt hole and a groove structure for mounting the o-ring, wherein: the lead frame type conductive pad and the pad base are connected and fixed by using a bolt and a nut to form a conductive pad a microchannel for direct cooling fluid flow; wherein the 0-ring is placed in a recess formed by the lead frame type conductive pad and the pad base for preventing leakage of fluid in the microchannel .
2. 根据权利要求 1所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述的引线框架式导电焊盘包含至少一个漏极引脚、 一个源极引脚 和一个门极引脚。  2. The microchannel-containing lead frame pad for high power electronic component package according to claim 1, wherein said lead frame type conductive pad comprises at least one drain pin and one source lead Foot and a gate pin.
3. 根据权利要求 1所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述的引线框架式导电焊盘底面凹槽的截面形状为半圆形， 或三角 形， 或矩形。  3. The microchannel-containing lead frame pad for a high power electronic component package according to claim 1, wherein a cross-sectional shape of the bottom surface of the lead frame type conductive pad is semicircular, or Triangle, or rectangle.
4. 根据权利要求 1所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述的焊盘底座顶面凹槽的截面形状为半圆形， 或三角形， 或矩形。  4. The microchannel-containing lead frame pad for high power electronic component package according to claim 1, wherein the top surface of the pad base has a semicircular shape, or a triangular shape. Or rectangle.
5. 根据权利要求 1所述的用于髙功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述的焊盘底座内的微通道包含至少一个流体入口和一个流体出 臼。  5. The microchannel-containing leadframe pad for a power electronic component package according to claim 1, wherein the microchannel in the pad base comprises at least one fluid inlet and one fluid outlet.
6. 根据权利要求 1所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述的引线框架式导电悍盘的厚度范围是 0.1毫米至 0.8毫米。  6. The microchannel-containing lead frame pad for high power electronic component package according to claim 1, wherein said lead frame type conductive disk has a thickness ranging from 0.1 mm to 0.8 mm.
7. 根据权利要求 1所述的一种用于高功率电子元件封装的含微通道的引线框架 焊盘， 其特征在于所述的焊盘底座的厚度范围是 1.0毫米至 3.0毫米。  7. A microchannel-containing lead frame pad for a high power electronic component package according to claim 1, wherein said pad base has a thickness ranging from 1.0 mm to 3.0 mm.
8. 根据权利要求 1所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述的焊盘底座内的微通道的类型包括针肋阵列型、直微通道阵列 型、 单微通道型和树形分叉微通道型。  8. The microchannel-containing lead frame pad for high power electronic component package according to claim 1, wherein the type of the microchannel in the pad base comprises a pin rib array type, a direct micro channel Array type, single micro channel type and tree bifurcated micro channel type.
9. 根据权利要求 8所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述焊盘底座内微通道的针肋阵列型微通道的柱肋形状包括长方 体针肋、 三棱柱针肋、 圆柱针肋和六棱柱针肋。 9. The microchannel-containing lead frame pad for high power electronic component package according to claim 8, wherein the column rib shape of the pin rib array type microchannel of the microchannel in the pad base comprises a rectangular parallelepiped Needle ribs, triangular prism pin ribs, cylindrical pin ribs and hexagonal prism pin ribs.
10. 根据权利要求 8所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述焊盘底座内微通道的针肋阵列型微通道的针肋阵列样式包括顺 排和叉排方式。 10. The microchannel-containing lead frame pad for a high power electronic component package according to claim 8, wherein the pin rib array pattern of the pin rib array type microchannel of the microchannel in the pad base comprises Straight and forked.
11. 根据权利要求 8所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述焊盘底座内微通道的直微通道阵列型的微通道的截面形状包括 三角形、 矩形、 半圆形和梯形。  11. The microchannel-containing lead frame pad for high power electronic component package according to claim 8, wherein a cross-sectional shape of the microchannel array type microchannel of the microchannel in the pad base comprises Triangles, rectangles, semicircles, and trapezoids.
12. 根据权利要求 8所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述悍盘底座内微通道的单微通道的微通道的截面形状包括三角 形、 矩形、 半圆形和梯形。  12. The microchannel-containing lead frame pad for high power electronic component package according to claim 8, wherein a cross-sectional shape of the microchannel of the microchannel of the microchannel in the disk base comprises a triangle, Rectangular, semi-circular and trapezoidal.
13. 根据权利要求 8所述的用于高功率电子元件封装的含微通道的引线框架悍盘， 其特征在于所述焊盘底座内微通道的针肋阵列型微通道的针肋间距的范围是  13. The microchannel-containing lead frame disk for high power electronic component package according to claim 8, wherein a range of pin pitch of the pin rib array type microchannel of the microchannel in the pad base is Yes
0.05毫米到 15毫米。  0.05 mm to 15 mm.
14. 根据权利要求 8所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述悍盘底座内微通道的单微通道的微通道的截面面积的范围是  14. The microchannel-containing lead frame pad for high power electronic component package according to claim 8, wherein a range of a cross-sectional area of the microchannel of the microchannel of the microchannel in the tray base is
0.0025平方毫米至 9平方毫米。  0.0025 mm 2 to 9 mm 2 .
15. 根据权利要求 8所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其特征在于所述焊盘底座内微通道的直微通道阵列型的单个微通道的截面面积 的范围是 0.0025平方毫米至 9平方毫米。  15. The microchannel-containing lead frame pad for a high power electronic component package according to claim 8, wherein a cross-sectional area of a single microchannel of a direct microchannel array type of the microchannel in the pad base is The range is from 0.0025 square millimeters to 9 square millimeters.
16. 根据权利要求 8所述的用于高功率电子元件封装的含微通道的引线框架焊盘， 其 特征在于所述焊盘底座内微通道的树形分叉型微通道的单个分支的截面面积的范 围是 0.0025平方毫米至 9平方毫米。  16. The microchannel-containing lead frame pad for a high power electronic component package according to claim 8, wherein a cross section of a single branch of the tree-shaped bifurcated microchannel of the microchannel in the pad base The area ranges from 0.0025 square millimeters to 9 square millimeters.
17. —种采用含微通道引线框架式焊盘的功率电子封装结构， 包括如权利要求 1所述 的含微通道的引线框架焊盘、至少一个二极管、至少一个 IGBT元件和封装二极管、 IGBT元件和引线框架引脚的模塑料， 所述的二极管粘结在引线框架式导电焊盘上 表面，所述的 IGBT元件粘结在引线框架式导电焊盘上表面，其特征在于所述的二 极管的正极与所述的 IGBT元件的源极经引线互联，所述的二极管的负极与引线框 架式导电焊盘经引线互联，所述的 IGBT元件的漏极与引线框架式导电焊盘经引线 互联，所述的 IGBT元件的门极与引线框架式导电焊盘的引线框架的门极引脚经引 线互联。  17. A power electronic package structure using a microchannel leadframe pad, comprising the microchannel-containing leadframe pad of claim 1, at least one diode, at least one IGBT component and package diode, IGBT component And a molding compound of the lead frame pin, the diode is bonded to the upper surface of the lead frame type conductive pad, and the IGBT element is bonded to the upper surface of the lead frame type conductive pad, characterized in that the diode is a positive electrode is interconnected with a source of the IGBT element via a lead, a negative electrode of the diode is interconnected with a lead frame type conductive pad via a lead, and a drain of the IGBT element is interconnected with a lead frame type conductive pad via a lead. The gate of the IGBT element and the gate pin of the lead frame of the lead frame type conductive pad are interconnected by a wire.
18. 根据权利要求 17所述的采用含微通道引线框架式焊盘的功率电子封装结构， 其特 征在于所述的二极管与 IGBT元件之间的互联釆用至少三根引线。 18. The power electronic package structure using a microchannel lead frame type pad according to claim 17, wherein the interconnection between the diode and the IGBT element uses at least three leads.
19. 根据权利要求 17所述的采用含微通道引线框架式焊盘的功率电子封装结构， 其特 征在于所述的 IGBT元件与引线框架源极之间的互联采用至少三根引线。 19. A power electronic package structure using a microchannel leadframe pad according to claim 17, wherein the interconnection between said IGBT component and the leadframe source employs at least three leads.
20. 一种制造采用含微通道引线框架式焊盘的功率电子封装的工艺， 依次步骤如下： 获得初始的引线框架式焊盘，所述焊盘具有放置 0型密封圈的凹槽，螺栓孔和至 少一个源极引脚、 一个门极引脚和一个与焊盘相连的漏极；  20. A process for fabricating a power electronic package using a microchannel leadframe pad, the steps of which are as follows: Obtain an initial leadframe pad having a recess in which a 0-ring is placed, a bolt hole And at least one source pin, one gate pin, and one drain connected to the pad;
粘结二极管至引线框架式焊盘上表面， 二极管通过导电胶与引线框架式焊盘粘 结， 二极管的负极与引线框架式焊盘电互联；  Bonding the diode to the upper surface of the lead frame pad, the diode is bonded to the lead frame pad through the conductive paste, and the negative electrode of the diode is electrically interconnected with the lead frame pad;
粘结 IGBT元件至引线框架式焊盘上表面， IGBT元件的漏极通过导电胶与引线 框架式焊盘电互联；  Bonding the IGBT component to the upper surface of the lead frame pad, and the drain of the IGBT component is electrically interconnected with the lead frame pad through the conductive paste;
引线互联二极管与所述 IGBT元件， IGBT元件与引线框架式焊盘的源极和漏极 之间的电互联；  Electrical interconnection between the lead interconnection diode and the IGBT element, the source and the drain of the IGBT element and the lead frame pad;
将二极管、 IGBT元件、 一部分引线框架式焊盘和一部分引线框架的引脚封装在 模塑料内；  A diode, an IGBT element, a portion of the lead frame pad, and a portion of the lead frame are packaged in a molding compound;
在具有螺栓孔的初始引线框架式焊盘以及对应带螺栓孔的焊盘底座上制造微通 道和用于安装 0型密封圈的凹槽；  Manufacturing a microchannel and a groove for mounting a 0-type seal on an initial lead frame pad having a bolt hole and a pad base corresponding to the bolt hole;
装配所述加工好的引线框架式焊盘及焊盘底座， 将 0型密封圈装入引线框架式焊 盘和焊盘底座上的凹槽内， 0型密封圈的大小与凹槽空间相同，引线框架式焊盘和 焊盘底座之间的装配采用螺栓和螺帽装配。  The fabricated lead frame pad and the pad base are assembled, and the 0-type sealing ring is loaded into the groove of the lead frame pad and the pad base, and the size of the 0-type sealing ring is the same as the groove space. The assembly between the lead frame pad and the pad base is assembled using bolts and nuts.
21. 根据权利要求 20所述的一种制造采用采用含微通道引线框架式焊盘的功率电子封 装的工艺流程， 其特征在于包含最后的引脚切割工艺过程。  21. A process flow for manufacturing a power electronic package using a microchannel-containing leadframe pad according to claim 20, characterized by comprising a final pin cutting process.
PCT/CN2011/002157 2011-12-21 2011-12-21 Lead frame pad containing microchannels for packaging high-power electronic component, packaging structure and process WO2013091142A1 (en)

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