WO2013072697A2 - Method - Google Patents
Method Download PDFInfo
- Publication number
- WO2013072697A2 WO2013072697A2 PCT/GB2012/052846 GB2012052846W WO2013072697A2 WO 2013072697 A2 WO2013072697 A2 WO 2013072697A2 GB 2012052846 W GB2012052846 W GB 2012052846W WO 2013072697 A2 WO2013072697 A2 WO 2013072697A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- palladium
- zinc oxide
- coating
- platinum
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 164
- 239000011787 zinc oxide Substances 0.000 claims abstract description 82
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000000576 coating method Methods 0.000 claims abstract description 53
- 239000011248 coating agent Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 49
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 claims abstract description 30
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 22
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 150000003751 zinc Chemical class 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 18
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 claims description 17
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 12
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 11
- 150000003839 salts Chemical class 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 239000000178 monomer Substances 0.000 claims description 9
- 230000009467 reduction Effects 0.000 claims description 7
- -1 nitrate ions Chemical class 0.000 description 57
- 239000010408 film Substances 0.000 description 24
- 229920000075 poly(4-vinylpyridine) Polymers 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 238000000151 deposition Methods 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 12
- 239000003570 air Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000000844 anti-bacterial effect Effects 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 239000004744 fabric Substances 0.000 description 9
- 241000894007 species Species 0.000 description 9
- 239000004743 Polypropylene Substances 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 229920001155 polypropylene Polymers 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- KFDVPJUYSDEJTH-UHFFFAOYSA-N 4-ethenylpyridine Chemical compound C=CC1=CC=NC=C1 KFDVPJUYSDEJTH-UHFFFAOYSA-N 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
- 241000894006 Bacteria Species 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000003795 desorption Methods 0.000 description 4
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 230000002147 killing effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 241000588724 Escherichia coli Species 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000001580 bacterial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010668 complexation reaction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000013545 self-assembled monolayer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical group C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 241000272478 Aquila Species 0.000 description 1
- YASYEJJMZJALEJ-UHFFFAOYSA-N Citric acid monohydrate Chemical compound O.OC(=O)CC(O)(C(O)=O)CC(O)=O YASYEJJMZJALEJ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001646716 Escherichia coli K-12 Species 0.000 description 1
- 239000006142 Luria-Bertani Agar Substances 0.000 description 1
- 241001124569 Lycaenidae Species 0.000 description 1
- 241000721701 Lynx Species 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 241001365789 Oenanthe crocata Species 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 238000003991 Rietveld refinement Methods 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 206010052428 Wound Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000010669 acid-base reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000004113 cell culture Methods 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229960002303 citric acid monohydrate Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000010559 graft polymerization reaction Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 238000002129 infrared reflectance spectroscopy Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012538 light obscuration Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000007523 nucleic acids Chemical class 0.000 description 1
- 102000039446 nucleic acids Human genes 0.000 description 1
- 108020004707 nucleic acids Proteins 0.000 description 1
- 238000005580 one pot reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000013032 photocatalytic reaction Methods 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 238000000807 solvent casting Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000009424 underpinning Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 230000029663 wound healing Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2073—Multistep pretreatment
- C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
Definitions
- the present invention relates to a method for applying a zinc oxide coating to a substrate, a zinc oxide coating obtainable by such a method, and an apparatus comprising a substrate and such a zinc oxide coating on the substrate.
- Zinc oxide is a transparent semiconductor with wurtzite (hexagonal close packed) crystal structure and a bandgap of about 3.3 eV. It exhibits many desirable properties, which include ultraviolet light absorption, photoconductivity, photocata lysis,
- Electroless deposition of zinc oxide is potentially attractive given that it proceeds at mild temperatures (less than 50° C), is relatively inexpensive, and produces highly crystalline films.
- Izaki, M. et al., J. Electrochem. Soc., 1997, 144, L3, and Shinagawa, T. et al., Electrochim. Acta, 2007, 53, 1170, describe a reaction between zinc nitrate and dimethylaminoborane (DMAB) in the presence of a palladium(O) catalyst under aqueous conditions (where dimethylaminoborane reduces the nitrate).
- DMAB dimethylaminoborane
- a method for applying a zinc oxide coating to a substrate comprising the steps of:
- the agent comprising palladium(II) and/or platinum(II) is an agent comprising palladium(II).
- Figure 1 shows a reaction scheme for an embodiment of the invention.
- Step (i) involves applying a nitrogen-containing aromatic heterocycle functionalised coating to the substrate.
- Step (i) may be a solventless method for functionalising solid surfaces with nitrogen containing aromatic heterocyclic groups.
- step (i) of applying a nitrogen-containing aromatic heterocycle functionalised coating to the substrate is performed by plasma deposition.
- Plasmachemical deposition is an established technique for the functionalization of surfaces. Film thickness can be easily controlled, and the process is solventless, conformal, as well as being substrate-independent, thereby making it well-suited for application to three-dimensional substrates such as textiles.
- pulsed plasmachemical deposition of, e.g., poly(4-vinylpyridine) is one potential way for tethering pyridine groups onto solid surfaces. This comprises modulating an electrical discharge in the presence of gaseous precursors containing polymerizable carbon-carbon double bonds.
- on- and off- periods typically timescales are of the order of microseconds and milliseconds respectively.
- any surface which relies on a specific functionality for its performance can, in principle, be produced by the aforementioned pulsed plasmachemical methodology.
- Examples devised in the past include: anhydride, carboxylic acid, amine, cyano, epoxide, hydroxyl, halide, thiol, furfuryl, perfluoroalkyl, perfluoromethylene, and trifluoromethyl functionalized surfaces.
- WO 2006/111711 Al describes a method for applying a coating containing reactive nitrogen functionality contained within an aromatic heterocyclic structure to a substrate, which method includes subjecting said substrate to a plasma discharge of a monomer possessing said heterocyclic nitrogen functionality.
- step (i) of the method of the invention uses a pulsed plasma deposition procedure.
- step (i) of the method of the invention uses a substantially continuous wave plasma deposition procedure.
- step (i) of the method of the invention uses a low average-power plasma deposition procedure.
- a procedure occurs at a power density of up to 10 mW/cm 3 .
- Low average-power plasma polymerisation can potentially overcome the limitations of other techniques for the production of surfaces bearing nitrogen containing aromatic heterocyclic moieties.
- the electroless deposition process is autocatalytic, so the conventional high structural retention criteria for the deposited plasma polymer layer are not compulsory, and the electroless deposition process can work at higher average powers as well.
- step (i) comprises subjecting the substrate to a plasma discharge of a monomer possessing aromatic heterocyclic nitrogen functionality.
- Step (i) of the method of the invention may use monomers possessing at least one conventionally polymerisable unsaturated functional group (e.g. selected from acrylate, methacrylate, alkene, styrene, alkyne and/or derivatives thereof) that is substantially distinct from the nitrogen containing aromatic ring structure desired at the substrate surface (e.g. selected from pyridine, pyrrole, quinoline, isoquiniline, purine, pyrimidine, indole and/or derivatives thereof)- Suitable monomers are described in WO 2006/111711 Al.
- the nitrogen containing aromatic ring structures are derived from pyridine.
- a particular example of a suitable monomer is a vinyl pyridine such as, for example, 4-vinyl pyridine:
- the nitrogen-containing aromatic heterocyclic groups in the nitrogen-containing aromatic heterocycle functionalised coating are derived from pyridine.
- Step (i) of the method of the invention may use a plasma polymerisation procedure as described in WO 2006/111711 Al.
- Step (i) of the method of the invention may result in a product wholly coated in a polymer coating possessing nitrogen containing aromatic heterocyclic functionality.
- the nitrogen containing aromatic heterocycle functionalised polymer coating is only applied to one or more selected surface domains of the substrate.
- the applications of such patterned substrates include fields where the spatial control of, for example, surface wettability is a consideration.
- the restriction of the nitrogen containing aromatic heterocycle coating to specific surface domains may be achieved by the methods described in WO 2006/111711 Al.
- step (i) of applying a nitrogen-containing aromatic heterocycle functionalised coating to the substrate may also be performed by a technique selected from, for example, spin coating, solvent casting, UV induced graft polymerization, and the use of self-assembled monolayers (SAMs).
- Step (ii) involves contacting the nitrogen-containing aromatic heterocycle functionalised coating with an agent comprising palladium(II) and/or platinum(II), resulting in a coating comprising complexed palladium(II) and/or platinum(II).
- Palladium and/or platinum centres can be coordinated to nitrogen-containing heterocycles such as pyridine via electron lone pair interaction.
- WO 2006/111711 Al describes a method where, after the application of a nitrogen containing aromatic heterocycle functionalised coating to a surface as described above, the surface is contacted with a solution of a metal salt, such as palladium chloride, under conditions such that the metal salt complexes with the surface heterocyclic groups.
- the agent comprising palladium(II) and/or platinum(II) in step (ii) comprises a salt of palladium(II) and/or platinum(II).
- the salt of palladium(II) and/or platinum(II) is a salt of palladium(II).
- the salt of palladium(II) is a halide such as, for example, palladium chloride.
- Step (ii) of the method of the invention may use the procedure for complexation of palladium chloride with a nitrogen containing aromatic heterocycle functionalised coating as described in WO 2006/111711 Al.
- Step (iii) involves reducing the complexed palladium(II) and/or platinum(II) in the coating to palladium(O) and/or platinum(O).
- the reduction of the complexed palladium(II) and/or platinum(II) to palladium(O) and/or platinum(O) in step (iii) occurs in the presence of
- DMAB dimethylaminoborane
- step (iii) of the method of the invention entails reduction of complexed palladium(II) to palladium(O) by a reducing agent such as, for example, DMAB.
- Step (iv) involves contacting the coating comprising complexed palladium(O) and/or platinum(O) with a zinc salt in the presence of a reducing agent under aqueous conditions to form a zinc oxide coating on the substrate.
- the zinc salt in step (iv) is zinc nitrate.
- the reducing agent in step (iv) is DMAB.
- steps (iii) and (iv) of the method of the invention entail reduction of complexed palladium(II) centres to palladium(O) by DMAB, followed by the reaction between zinc nitrate and DMAB in the presence of the palladium(O) centres.
- steps (iii) and (iv) of the method of the invention occur together as a one-pot reaction.
- the reducing agent which reduces the complexed palladium(II) and/or platinum(II) in the coating to palladium(O) and/or platinum(O) in step (iii) may also act as the reducing agent in step (iv).
- steps (iii) and (iv) of the method of the invention entail the in situ reduction of complexed palladium(II) centres to palladium(O) by DMAB, directly followed by the reaction between zinc nitrate and the DMAB in the presence of the resultant palladium(O) centres.
- a zinc oxide coating obtainable by, or which has been produced using, a method according to the first aspect.
- the zinc oxide coating is an antibacterial coating.
- the zinc oxide coating is for use in UV protection.
- an apparatus comprising a substrate and a zinc oxide coating according to the second aspect.
- the apparatus is a medical dressing.
- the apparatus is a thin film transistor.
- the apparatus is a dye-sensitized solar cell.
- the apparatus is a kinetic energy harvester.
- the apparatus is an electrode.
- the apparatus is a transparent electrode, e.g. in a liquid crystal display.
- references to properties such as film thicknesses, contact angles and the like are - unless stated otherwise - to properties measured under ambient conditions, i.e. at atmospheric pressure and at a temperature of from 18 to 25°C, for example about 20°C.
- Figure 1 shows a reaction scheme for an embodiment of the invention, namely the palladium catalyst seeding of pulsed plasma deposited poly(4-vinyl pyridine) films followed by electroless growth of zinc oxide.
- Figure 2 shows XPS spectra of: (a) pulsed plasma deposited poly(4-vinylpyridine); (b) pulsed plasma deposited poly(4-vinyl pyridine) seeded with palladium(II) chloride; (c) electroless zinc oxide growth onto palladium(II) chloride seeded pulsed plasma deposited poly(4-vinylpyridine).
- Figure 3 shows infrared spectra of: (a) 4-vinyl pyridine monomer; and (b) pulsed plasma deposited poly(4-vinylpyridine). * denotes polymerizable alkene bond absorbances in precursor.
- Figure 4 shows X-ray diffraction analysis of 500 nm thick zinc oxide film electrolessly grown onto palladium seeded pulsed plasma deposited poly(4-vinylpyridine).
- Figure 5 is an optical microscope image of zinc oxide film electrolessly grown onto palladium seeded pulsed plasma deposited poly(4-vinylpyridine).
- Figure 7 shows XPS C(ls) envelope of electrolessly deposited zinc oxide onto silicon wafer: (a) no UV exposure, and (b) 750 s UV exposure.
- Figure 8 shows a mechanism illustrating change in adsorbed species on zinc oxide surface during UV irradiation followed by subsequent oxygen readsorption over time.
- Film thickness measurements were carried out using a spectrophotometer (nkd-6000, Aquila Instruments Ltd.). Transmittance and reflectance curves across the 300-1000 nm wavelength range were fitted to a Cauchy model for dielectrics using a modified Levenberg-Marquardt method. The pulsed plasma poly(4-vinyl pyridine) deposition rate was measured to be 15 ⁇ 2 nm min "1 .
- XPS X-ray photoelectron spectroscopy
- Elemental compositions were calculated using sensitivity factors derived from chemical standards: C(ls) : O(ls) : N(ls) : Pd(3d) : Zn(2p) equals 1.00 : 0.36 : 0.57 : 0.05 : 0.05. All binding energies were referenced to the C(ls) hydrocarbon peak at 285.0 eV. The core level spectra were fitted to a linear background. Fourier transform infrared (FTIR) analysis of the deposited films was undertaken using a Perkin-Elmer Spectrum One spectrometer equipped with a liquid nitrogen cooled MCT detector.
- FTIR Fourier transform infrared
- Reflection-absorption (RAIRS) measurements utilized a variable angle accessory (Specac Ltd) set at 66° fitted with a KRS-5 polarizer to remove the s- polarized component. All spectra were averaged over 128 scans at a resolution of 4 cm "1 .
- Depth profiling measurements were undertaken by the Rutherford backscattering technique using a He + ion beam (5SDH Pelletron Accelerator). Backscattered He + ions were detected with 19 keV resolution using a PIPS detector.
- X-ray diffraction patterns of electrolessly deposited zinc oxide layers (1 ⁇ thick, mounted on a silicon (100) substrate) were collected using a powder diffractometer (Bruker d8) equipped with a Cu tube (1.5418 A wavelength), and a linear position- sensitive detector (Lynx Eye with a Ni filter). Data were collected from 5-65° 2 ⁇ with a step size of 0.02°.
- the electrolessly deposited zinc oxide layers were imaged with an optical microscope (Olympus BX40) fitted with a x50 magnification lens.
- Antibacterial testing was carried out according to a modified form of the Japanese Industrial Standard Protocol.
- a bacterial cell culture wild-type Escherichia coli K-12 lab strain W3110 grown to an A 6 5onm of 0.4 was applied in minimal salts buffer onto zinc oxide coated nonwoven polypropylene cloth and uncoated controls.
- Samples were incubated for 24 h at 37 °C in a moist, dark environment. Excess culture and cloth were transferred to a 2 ml spin column and centrifuged at 9000 rpm for 2 min to maximise recovery. The recovered culture was vortexed to resuspend cells; tenfold dilutions were performed and spotted onto LB agar. Plates were incubated overnight at 30 °C, after which the number of colonies was counted. To control for cell absorption onto samples, the above procedure was repeated with 1 min exposure of bacteria on coated and uncoated cloth.
- Pulsed plasmachemical deposition was undertaken in a cylindrical glass reactor (4.5 cm diameter, 500 cm 3 volume, 1 x 10 3 mbar base pressure, leak rate better than 1.7 x 10 "9 mol s "1 ).
- a copper coil (4 mm diameter, 10 turns) wound around the reactor was attached to a 13.56 MHz radio frequency (RF) power supply via an L-C matching unit.
- the whole apparatus was enclosed in a Faraday cage.
- the chamber was evacuated using a 30 L min 1 rotary pump attached to a liquid nitrogen cold trap and the system pressure monitored with a Pirani gauge.
- a pulse signal generator was used to trigger the RF power generator and an oscilloscope monitored the pulse shape.
- the glass reactor Prior to deposition, the glass reactor was cleaned by scrubbing with detergent, rinsing in acetone, oven drying, and then running a 40 W continuous wave air plasma for 30 min. Next, silicon (100) wafers (Silicon Valley Microelectronics Inc.), glass coverslips (VWR International Ltd), or nonwoven polypropylene cloth pieces (Corovin GmbH) were inserted into the chamber, and the system pumped back down to base pressure. At this stage, the reactor was purged with 4-vinylpyridine precursor (+95%, Sigma-Aldrich, further purified with three freezepump-thaw cycles) at a pressure of 0.2 mbar for 5 min followed by ignition of the electrical discharge.
- 4-vinylpyridine precursor (+95%, Sigma-Aldrich
- the poly(4-vinyl pyridine) functionalized surfaces were then immersed into an aqueous catalyst solution containing 2 ⁇ palladium(II) chloride (+99.999%, Alfa Aesar), 3.0 M sodium chloride (+99.5%, Sigma), and 0.5 M sodium citrate dehydrate (+99%, Aldrich) (which had been adjusted to pH 4.5 with citric acid monohydrate (+99%, Aldrich)) for 12 h, and subsequently washed in deionized water.
- the palladium(II) chloride immobilized surfaces were placed into an aqueous chemical bath containing 0.05 M zinc nitrate (+98%, Sigma-Aldrich) and 0.05 M dimethylaminoborane (+97%, Sigma-Aldrich) at a temperature of 323 K for 2 h.
- XPS characterization of pulsed plasma deposited poly(4-vinyl pyridine) layers confirmed the presence of only carbon and nitrogen at the surface, with no Si(2p) signal showing through from the underlying silicon substrate, see Table 1. Furthermore, a good correlation was found to exist between the atomic percentages calculated for the precursor (theoretical) and pulsed plasma deposited poly(4-vinyl pyridine) films, which is consistent with a high level of structural retention. Immersion into palladium(II) chloride solution gave rise to the appearance of Pd(3d 5 2 ) and Pd(3d 3 2 ) signals at 338.3 eV and 343.5 eV respectively and a Cl(2p) peak at 198.8 eV.
- X-ray diffraction characterisation showed peaks at 31.9°, 34.5°, 36.3°, 47.6°, 56.6°, and 62.9°, which are consistent with zinc oxide in the wurtzite structure (hexagonal close packed), see Figure 4.
- Rietveld refinement confirmed that the ratio of peak intensities matches that expected for wurtzite zinc oxide. Therefore the films are polycrystalline and randomly oriented. Peak widths measured for the powder diffraction patterns suggest a minimum crystallite size of 25 nm; although a number of other parameters, including lattice strain, can also be contributing factors.
- Optical microscopy showed a roughened surface corresponding to the different crystalline faces, see Figure 5.
- zinc oxide films deposited onto flat non-conducting glass pieces exhibited a marked increase in electrical conductivity rising from a dark conductivity value of 10 "7 mS cm 1 up to 1.5 mS cm 1 after 750 s, see Figure 6.
- the electrical conductivity was observed to slowly decay following termination of UV exposure.
- photoconductivity was retained following a period of weeks, whilst UV irradiation under vacuum gave rise to an increase in electrical conductivity.
- Zinc oxide coated polypropylene cloth pieces also displayed significant antibacterial activity (up to a log kill of 2.9) towards the Gram-negative bacterium, Escherichia coli, see Table 3.
- Control samples of the polypropylene cloth pieces exhibited no antibacterial activity, whereas a reduction of only log 0.2 was observed following exposure to the pulsed plasma poly(4-vinyl pyridine) coated cloth.
- This small drop can be attributed to the absorption (rather than killing) of cells onto the hydrophilic layer, since a similar result was obtained following a 1 min incubation period (as opposed to 24 h).
- XPS and infrared analyses have shown that a variety of substrates can be coated with structurally well-defined poly(4-vinyl pyridine) layers (in marked contrast to earlier high power continuous wave plasma polymers derived from 4-vinylpyridine). Subsequent seeding with catalytic palladium centres can provide for the localised electroless growth of zinc oxide.
- An additional benefit of this approach is that the functional polymer nanolayer can serve to protect the underlying substrate material from subsequent chemical processing steps such as, for example, the oxidising and reducing agents contained within the zinc oxide electroless deposition solution.
- Zinc oxide coated pulsed plasma poly(4-vinylpyridine) films display
- Photodesorption of 0 2( g ) from the zinc oxide surface creates vacancies, which can allow water molecule (present in the ambient air) adsorption.
- the necessity for water to be present during UV exposure indicates a photo-assisted dissociative water adsorption mechanism, see Figure 2.
- the photogenerated hydroxide groups are responsible for the surface switching from hydrophobic to hydrophilic. The contact angle fully recovers over a matter of weeks following extinction of UV irradiation (the exact duration depending upon UV intensity), see Figure 6.
- Verification of oxygen readsorption processes underpinning the reversible surface wetting behaviour back towards hydrophobic recovery was achieved by observing the lack of contact angle increase for when zinc oxide was UV irradiated in air (on flat substrate) and then stored under ultra high vacuum for extended periods of time. Therefore, in air, the water adsorbed at the surface during photoirradiation is thermodynamically displaced by oxygen species over a period of time. The speed at which this happens (leading to recharged hydrophobicity) is slow, and determines the long hydrophobicity recovery times seen for zinc oxide.
- This photochemical contact angle decay observed for UV exposure in air and reversal afterwards shows no correlation to the fast (purely electronic) bulk electron photoconduction processes, due to the far slower oxygen desorption and readsorption surface chemistry processes, see Figure 8.
- Zinc oxide displays similar surface chemistry during UV irradiation to that reported for titanium dioxide (another metal oxide semiconductor with a comparable bandgap). It is postulated that molecular oxygen adsorbs at titanium dioxide surface defect sites and it then traps a photogenerated electron to become 0 2 ⁇ (a cis ) species. In a similar fashion to zinc oxide, such 0 2 " (a cis ) species undergo photodesorption as 0 2(g) from Ti0 2 surfaces during UV irradiation. Therefore, the same behaviour is observed for both zinc oxide and titanium dioxide surfaces in relation to photoconductivity and photo-switchable wetting.
- Palladium catalyst seeded pulsed plasma poly(4-vinyl pyridine) nanolayers have been employed for the electroless growth of crystalline zinc oxide thin films. These are found to display photoconductivity, photo-switchable wetting, superhydrophobicity, and antibacterial properties.
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EP12806616.4A EP2780490A2 (en) | 2011-11-17 | 2012-11-16 | Method for applying zinc oxide to a substrate |
KR1020147016286A KR20140131907A (en) | 2011-11-17 | 2012-11-16 | Method for applying zinc oxide to a substrate |
US14/358,461 US20140302257A1 (en) | 2011-11-17 | 2012-11-16 | Method |
JP2014541754A JP2014533776A (en) | 2011-11-17 | 2012-11-16 | Method |
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KR20150096016A (en) * | 2014-02-13 | 2015-08-24 | 한국화학연구원 | Cell culture substrate with ZnO thin film formed by atomic layer deposition |
US20160219884A1 (en) * | 2015-02-04 | 2016-08-04 | Duravit Aktiengesellschaft | Ceramic article and a method for production thereof |
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US20160353578A1 (en) * | 2013-11-26 | 2016-12-01 | Jun Yang | Printing Method for Fabrication of Printed Electronics |
CN115233372A (en) * | 2022-08-02 | 2022-10-25 | 中采实业新材料(滁州)有限公司 | Processing method of composite spunlace non-woven fabric |
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US20070190362A1 (en) * | 2005-09-08 | 2007-08-16 | Weidman Timothy W | Patterned electroless metallization processes for large area electronics |
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SHINAGAWA, T. ET AL., ELECTROCHIM. ACTA, vol. 53, 2007, pages 1170 |
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KR20150096016A (en) * | 2014-02-13 | 2015-08-24 | 한국화학연구원 | Cell culture substrate with ZnO thin film formed by atomic layer deposition |
KR101652427B1 (en) * | 2014-02-13 | 2016-08-31 | 한국화학연구원 | Cell culture substrate with ZnO thin film formed by atomic layer deposition |
US20160219884A1 (en) * | 2015-02-04 | 2016-08-04 | Duravit Aktiengesellschaft | Ceramic article and a method for production thereof |
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WO2013072697A3 (en) | 2013-08-29 |
GB201119867D0 (en) | 2011-12-28 |
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