WO2013047000A1

WO2013047000A1 - Microwave radiating mechanism, surface wave plasma source, and surface wave plasma processing device

Info

Publication number: WO2013047000A1
Application number: PCT/JP2012/070988
Authority: WO
Inventors: 池田　太郎; 長田　勇輝; 大幸宮下; 河西　繁
Original assignee: 東京エレクトロン株式会社
Priority date: 2011-09-30
Filing date: 2012-08-20
Publication date: 2013-04-04
Also published as: TW201332402A; JP2013077441A

Abstract

A microwave radiating mechanism (41) comprises: a surface wave plasma emitting antenna (81); a slow wave material (82) formed from a dielectric; a dielectric member (83) in which an electric field is formed for generating a surface wave plasma by microwaves radiated from the antenna (81); either an electric field sensor (112) or a plasma light emission sensor (113); and sensor via holes (110) which are disposed for the passage of the slow wave material (82) and the surface wave plasma emitting antenna (81). The sensor through holes (110) are formed in a region corresponding to the interior of a slot in a concentric circle with an equivalent one or more integer multiples of one or more slots. Either the electric field sensor (112) or the plasma light emission sensor (113) is inserted into at least one of the sensor through holes (110).

Description

Microwave radiation mechanism, surface wave plasma source and surface wave plasma processing apparatus

The present invention relates to a microwave radiation mechanism, a surface wave plasma source, and a surface wave plasma processing apparatus.

Plasma processing is an indispensable technology for the manufacture of semiconductor devices. Recently, the design rules of semiconductor elements constituting LSIs have been increasingly miniaturized due to the demand for higher integration and higher speed of LSIs, and semiconductor wafers Along with this, there is a demand for plasma processing apparatuses that can cope with such miniaturization and enlargement.

However, in parallel plate type and inductively coupled plasma processing apparatuses that have been widely used in the past, the electron temperature of the generated plasma is high, causing plasma damage to fine elements, and limiting the region where the plasma density is high. Therefore, it is difficult to uniformly and rapidly perform plasma processing on a large semiconductor wafer.

Therefore, an RLSA (Radial Line Slot Antenna) microwave plasma processing apparatus that can uniformly form high-density, low-electron-temperature surface wave plasma has attracted attention (for example, Patent Document 1).

The RLSA microwave plasma processing apparatus is provided with a radial line slot antenna (Radial Line Slot Antenna) having a plurality of slots formed in a predetermined pattern at the top of the chamber as a surface wave plasma generation antenna, and is guided from a microwave generation source. The microwave is radiated from the slot of the antenna and radiated into a chamber held in a vacuum through a microwave transmission plate made of a dielectric material provided under the antenna. Wave plasma is generated, thereby processing an object to be processed such as a semiconductor wafer.

In addition, the microwaves are divided into a plurality of parts, and a plurality of microwave radiating parts having the above-mentioned surface wave plasma generating antennas are provided. A plasma processing apparatus for generating plasma has also been proposed (Patent Document 2).

In this type of plasma processing apparatus, the output of the microwave for generating plasma is detected at a position between the power supply unit and the tuner, and the actual plasma state is detected in the chamber. Through small windows.

JP 2000-294550 A International Publication No. 2008/013112 Pamphlet

When detecting the microwave output at a position between the power supply unit and the tuner, it is difficult to determine whether or not the set power is actually output from the surface wave plasma generating antenna. In addition, when detecting the plasma state through a small window provided in the chamber, it is possible to detect even if the plasma is extinguished or defective in ignition among multiple antenna modules. Is difficult.

In order to eliminate such inconvenience, it is conceivable to directly detect the power output from the surface wave plasma generating antenna and the plasma state directly under the antenna. In this case, the electric field distribution for generating the plasma May be disturbed.

Accordingly, an object of the present invention is to provide a microwave radiation mechanism capable of directly detecting the power output from the surface wave plasma generating antenna and the plasma state immediately below the antenna without disturbing the electric field distribution for generating the plasma, and Another object is to provide a surface wave plasma source and a surface wave plasma processing apparatus using the same.

According to a first aspect of the present invention, a microwave transmission path for transmitting a microwave output from a microwave output unit in a surface wave plasma source for forming a surface wave plasma in a chamber is provided. A microwave radiation mechanism for radiating a microwave into the chamber, and generating a surface wave plasma by radiating the microwave transmitted through the microwave transmission path into the chamber through a slot An antenna, a slow-wave material made of a dielectric material provided upstream of the surface wave plasma generating antenna of the microwave transmission path, and a downstream side of the surface wave plasma generating antenna of the microwave transmission path An electric field for generating the surface wave plasma is formed by the microwave radiated from the surface wave plasma generating antenna. An electric field sensor that detects an electric field of the dielectric member in order to measure the electric power of the microwave radiated from the electric wave member and the antenna for generating the surface wave plasma, or the surface wave plasma via the dielectric member A plasma emission sensor for detecting luminescence, and a sensor insertion hole provided so as to penetrate the slow wave material and the surface wave plasma generating antenna, and into which the electric field sensor or the plasma emission sensor is inserted, The sensor insertion hole is formed in a region corresponding to the inside of the slot of the slow wave material and the surface wave plasma generating antenna, n times the slot on the same circumference centered on the axis of the microwave transmission path. (Where n is an integer equal to or greater than 1), and the electric field sensor or the plasma emission sensor has a small number of sensor insertion holes. Kutomo one to have been inserted, the microwave radiation mechanism is provided.

The electric field sensor is constituted by a coaxial cable having a monopole portion at a tip, and monitors an electric field generated in the dielectric member by bringing the monopole portion into contact with or close to the dielectric member. It is preferable. The electric field sensor has a function of grasping whether or not electromagnetic waves are normally radiated from the surface wave plasma generating antenna, a function of grasping a power value for obtaining an appropriate plasma condition according to a process, and It is possible to have a function of detecting ignition or misfiring of plasma.

The plasma light emitting sensor may include a light receiving element that detects light emission of plasma through the dielectric member, and the light receiving element may be in contact with or close to the dielectric member.

It is preferable that a plug for preventing electromagnetic wave leakage is inserted into the sensor insertion hole in which the electric field sensor or the plasma emission sensor is not inserted.

According to the second aspect of the present invention, a microwave generation mechanism for generating a microwave, a microwave transmission path for transmitting the generated microwave, and the microwave transmission path are provided, and the microwave is provided in the chamber. A surface wave plasma source having a plurality of microwave radiation mechanisms for radiating, and radiating microwaves into the chamber to generate surface wave plasma by gas supplied into the chamber, wherein the microwave radiation The mechanism provides a surface wave plasma source having the configuration of the first aspect.

According to a third aspect of the present invention, a chamber that accommodates a substrate to be processed, a gas supply mechanism that supplies a gas into the chamber, a microwave generation mechanism that generates a microwave, and a generated microwave are transmitted. A microwave transmission path, and a plurality of microwave radiation mechanisms that are provided in the microwave transmission path and radiate microwaves into the chamber, radiate microwaves into the chamber, and are supplied into the chamber. A surface wave plasma source for generating a surface wave plasma from a gas, and processing the substrate to be processed in the chamber with the surface wave plasma, wherein the microwave radiation mechanism Provides a surface wave plasma processing apparatus having the configuration of the first aspect.

It is sectional drawing which shows schematic structure of the surface wave plasma processing apparatus which has a microwave radiation mechanism which concerns on embodiment of this invention. It is a block diagram which shows the structure of the microwave plasma source used for the surface wave plasma processing apparatus of FIG. It is a longitudinal cross-sectional view which shows the microwave radiation mechanism in the surface wave plasma processing apparatus of FIG. It is a cross-sectional view which shows the electric power feeding mechanism of a microwave radiation mechanism. It is a top view which shows the slag and the sliding member in the main body of a tuner. It is a perspective view which shows the inner side conductor in the main body of a tuner. It is a top view which shows an example of the antenna for surface wave plasma generation. It is sectional drawing which shows the structural example of an electric field sensor. It is a figure which shows the monitor electric power by an electric field sensor. It is a figure which shows the relationship between the electric power radiated | emitted from the antenna for surface wave plasma generation, and the square value of monitor current. It is a figure which shows the electric field simulation result at the time of providing one sensor insertion hole in the antenna for surface wave plasma generation | occurrence | production which has five slots. Results of electric field simulation in the case where five sensor insertion holes are provided on the same circumference around the axis of the coaxial waveguide 44 in the surface wave plasma generating antenna having five slots (equal angle). FIG. When five sensor insertion holes are provided equally and a plug is inserted into the sensor insertion hole, the variation in electric field due to the rotation angle of the plug (sensor insertion hole), the radial position, and the diameter of the plug (sensor insertion hole) It is a figure which shows the result investigated compared with the case where a plug (sensor insertion hole) is not provided, and the case where only one plug (sensor insertion hole) is provided. It is a figure for demonstrating the rotation angle of a plug in FIG. 12, the position of radial direction, and the diameter of a plug. It is a figure which shows the relationship between the distance from electromagnetic waves (the back surface of a dielectric material member), and an attenuation constant.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

<Configuration of surface wave plasma processing apparatus>
FIG. 1 is a cross-sectional view showing a schematic configuration of a surface wave plasma processing apparatus having a microwave radiation mechanism according to an embodiment of the present invention, and FIG. 2 is a microwave plasma source used in the surface wave plasma processing apparatus of FIG. FIG.

The surface wave plasma processing apparatus 100 is configured as a plasma etching apparatus that performs, for example, an etching process as a plasma process on a wafer, and is grounded in a substantially cylindrical shape made of an airtight metal material such as aluminum or stainless steel. A chamber 1 and a microwave plasma source 2 for forming microwave plasma in the chamber 1. An opening 1 a is formed in the upper part of the chamber 1, and the microwave plasma source 2 is provided so as to face the inside of the chamber 1 from the opening 1 a.

In the chamber 1, a susceptor 11 for horizontally supporting a semiconductor wafer W (hereinafter, referred to as a wafer W), which is an object to be processed, is erected at the center of the bottom of the chamber 1 via an insulating member 12a. It is provided in a state supported by the support member 12. Examples of the material constituting the susceptor 11 and the support member 12 include aluminum whose surface is anodized (anodized).

Although not shown, the susceptor 11 includes an electrostatic chuck for electrostatically attracting the wafer W, a temperature control mechanism, a gas flow path for supplying heat transfer gas to the back surface of the wafer W, and the wafer. In order to convey W, elevating pins and the like that elevate and lower are provided. Furthermore, a high frequency bias power supply 14 is electrically connected to the susceptor 11 via a matching unit 13. By supplying high frequency power from the high frequency bias power source 14 to the susceptor 11, ions in the plasma are attracted to the wafer W side.

An exhaust pipe 15 is connected to the bottom of the chamber 1, and an exhaust device 16 including a vacuum pump is connected to the exhaust pipe 15. Then, by operating the exhaust device 16, the inside of the chamber 1 is exhausted, and the inside of the chamber 1 can be decompressed at a high speed to a predetermined degree of vacuum. Further, on the side wall of the chamber 1, a loading / unloading port 17 for loading / unloading the wafer W and a gate valve 18 for opening / closing the loading / unloading port 17 are provided.

In the upper position of the susceptor 11 in the chamber 1, a shower plate 20 that discharges a processing gas for plasma etching toward the wafer W is provided horizontally. The shower plate 20 has a gas flow path 21 formed in a lattice shape and a large number of gas discharge holes 22 formed in the gas flow path 21. It is a space part 23. A pipe 24 extending outside the chamber 1 is connected to the gas flow path 21 of the shower plate 20, and a processing gas supply source 25 is connected to the pipe 24.

On the other hand, a ring-shaped plasma gas introduction member 26 is provided along the chamber wall above the shower plate 20 of the chamber 1, and the plasma gas introduction member 26 has a number of gas discharge holes on the inner periphery. Is provided. A plasma gas supply source 27 for supplying plasma gas is connected to the plasma gas introduction member 26 via a pipe 28. Ar gas or the like is preferably used as the plasma generating gas.

The plasma gas introduced into the chamber 1 from the plasma gas introduction member 26 is turned into plasma by the microwave introduced into the chamber 1 from the microwave plasma source 2, and this plasma passes through the space 23 of the shower plate 20. The processing gas discharged from the gas discharge hole 22 of the shower plate 20 is excited to form plasma of the processing gas.

The microwave plasma source 2 is supported by a support ring 29 provided at the upper part of the chamber 1, and the space between them is hermetically sealed. As shown in FIG. 2, the microwave plasma source 2 includes a microwave output unit 30 that distributes the microwaves to a plurality of paths and outputs microwaves, and transmits the microwaves output from the microwave output unit 30 to enter the chamber 1. And a microwave supply unit 40 for radiating.

The microwave output unit 30 includes a microwave power source 31, a microwave oscillator 32, an amplifier 33 that amplifies the oscillated microwave, and a distributor 34 that distributes the amplified microwave into a plurality of parts. .

The microwave oscillator 32 causes, for example, a PLL oscillation of a microwave having a predetermined frequency (for example, 915 MHz). The distributor 34 distributes the microwave amplified by the amplifier 33 while matching the impedance between the input side and the output side so that the loss of the microwave does not occur as much as possible. As the microwave frequency, 700 MHz to 3 GHz can be used in addition to 915 MHz.

The microwave supply unit 40 includes a plurality of amplifier units 42 that mainly amplify the microwaves distributed by the distributor 34, and a microwave radiation mechanism 41 connected to each of the plurality of amplifier units 42. Yes.

The amplifier unit 42 includes a phase shifter 45, a variable gain amplifier 46, a main amplifier 47 constituting a solid state amplifier, and an isolator 48.

The phase shifter 45 is configured to be able to change the phase of the microwave, and by adjusting this, the radiation characteristic can be modulated. For example, by adjusting the phase for each antenna module, the directivity is controlled to change the plasma distribution, and the circular polarization is obtained by shifting the phase by 90 ° between adjacent antenna modules as will be described later. be able to. The phase shifter 45 can be used for the purpose of spatial synthesis in the tuner by adjusting the delay characteristics between the components in the amplifier. However, the phase shifter 45 need not be provided when such modulation of radiation characteristics and adjustment of delay characteristics between components in the amplifier are not required.

The variable gain amplifier 46 is an amplifier for adjusting the power level of the microwave input to the main amplifier 47, adjusting the variation of individual antenna modules, or adjusting the plasma intensity. By changing the variable gain amplifier 46 for each antenna module, the generated plasma can be distributed.

The main amplifier 47 constituting the solid state amplifier can be configured to include, for example, an input matching circuit, a semiconductor amplifying element, an output matching circuit, and a high Q resonance circuit.

The isolator 48 separates reflected microwaves reflected by the microwave radiation mechanism 41 and directed to the main amplifier 47, and includes a circulator and a dummy load (coaxial terminator). The circulator guides the microwave reflected by the antenna unit 43 of the microwave radiation mechanism 41 described later to the dummy load, and the dummy load converts the reflected microwave guided by the circulator into heat.

As shown in the longitudinal sectional view of FIG. 3 and the transverse sectional view of FIG. 4, the microwave radiation mechanism 41 includes a waveguide 44 having a coaxial structure that transmits microwaves, and the microwave transmitted through the waveguide 44 is transferred to the chamber 1. And an antenna portion 43 that radiates inside. Then, the microwaves radiated from the microwave radiation mechanism 41 into the chamber 1 are combined in the space in the chamber 1, and surface wave plasma is formed in the chamber 1.

The waveguide 44 is configured by coaxially arranging a cylindrical outer conductor 52 and a rod-shaped inner conductor 53 provided at the center thereof, and an antenna portion 43 is provided at the tip of the waveguide 44. In the waveguide 44, the inner conductor 53 is a power supply side, and the outer conductor 52 is a ground side. The upper end of the outer conductor 52 and the inner conductor 53 is a reflection plate 58.

A feeding mechanism 54 that feeds microwaves (electromagnetic waves) is provided on the proximal end side of the waveguide 44. The power feeding mechanism 54 has a microwave power introduction port 55 for introducing microwave power provided on a side surface of the waveguide 44 (outer conductor 52). A coaxial line 56 including an inner conductor 56 a and an outer conductor 56 b is connected to the microwave power introduction port 55 as a feed line for supplying the microwave amplified from the amplifier unit 42. A feeding antenna 90 extending horizontally toward the inside of the outer conductor 52 is connected to the tip of the inner conductor 56 a of the coaxial line 56.

The feed antenna 90 is formed by, for example, cutting a metal plate such as aluminum and then fitting it into a dielectric member such as Teflon (registered trademark). A slow wave material 59 made of a dielectric material such as Teflon (registered trademark) for shortening the effective wavelength of the reflected wave is provided between the reflector 58 and the feeding antenna 90.

In addition, when a microwave with a high frequency such as 2.45 GHz is used, the slow wave material 59 may not be provided. At this time, the electromagnetic wave radiated from the power feeding antenna 90 is reflected by the reflection plate 58, thereby transmitting the maximum electromagnetic wave into the waveguide 44 having the coaxial structure. In that case, the distance from the feeding antenna 90 to the reflector 58 is set to a half wavelength multiple of about λg / 4. However, this may not apply to microwaves with low frequencies due to radial constraints. In that case, it is preferable to optimize the shape of the feeding antenna so that the antinodes of the electromagnetic waves generated from the feeding antenna 90 are induced below the feeding antenna 90 instead of the feeding antenna 90.

As shown in FIG. 4, the feeding antenna 90 is connected to the inner conductor 56 a of the coaxial line 56 at the microwave power introduction port 55, and the first pole 92 to which the electromagnetic wave is supplied and the second electromagnetic wave to radiate the supplied electromagnetic wave. The antenna main body 91 having the pole 93 and the reflection part 94 extending from both sides of the antenna main body 91 along the outside of the inner conductor 53 to form a ring shape, and the electromagnetic wave incident on the antenna main body 91 and the reflection part A standing wave is formed by the electromagnetic wave reflected at 94. The second pole 93 of the antenna body 91 is in contact with the inner conductor 53.

The microwave power is fed into the space between the outer conductor 52 and the inner conductor 53 by the feed antenna 90 radiating microwaves (electromagnetic waves). Then, the microwave power supplied to the power feeding mechanism 54 propagates toward the antenna unit 43.

A tuner 60 is provided in the waveguide 44. The tuner 60 matches the impedance of the load (plasma) in the chamber 1 with the characteristic impedance of the microwave power source in the microwave output unit 30, and includes two tuners provided between the outer conductor 52 and the inner conductor 53. It has

slag

61a, 61b and the slag drive part 70 provided in the outer side (upper side) of the reflecting plate 58. FIG.

Among these slags, the slag 61a is provided on the slag drive unit 70 side, and the slag 61b is provided on the antenna unit 43 side. Further, in the inner space of the inner conductor 53, two

slag moving shafts

64a and 64b for slag movement are provided along a longitudinal direction of the inner conductor 53. The

slag moving shafts

64a and 64b are formed by screw rods having trapezoidal screws, for example.

As shown in FIG. 5, the slag 61a has an annular shape made of a dielectric, and a sliding member 63 made of a resin having slipperiness is fitted inside the slag 61a. The sliding member 63 is provided with a screw hole 65a into which the slag moving shaft 64a is screwed and a through hole 65b into which the slag moving shaft 64b is inserted. On the other hand, the slag 61b has a screw hole 65a and a through hole 65b as in the case of the slag 61a. On the contrary to the slag 61a, the screw hole 65a is screwed to the slag moving shaft 64b and is connected to the through hole 65b. The slag moving shaft 64a is inserted. Thereby, the slag 61a moves up and down by rotating the slag movement shaft 64a, and the slag 61b moves up and down by rotating the slag movement shaft 64b. That is, the

slugs

61a and 61b are moved up and down by a screw mechanism including the

slug moving shafts

64a and 64b and the sliding member 63.

As shown in FIG. 6, the inner conductor 53 has three slits 53a formed at equal intervals along the longitudinal direction. On the other hand, the sliding member 63 is provided with three protrusions 63a at equal intervals so as to correspond to the slits 53a. Then, the sliding member 63 is fitted into the

slags

61a and 61b in a state where the protruding portions 63a are in contact with the inner circumferences of the

slags

61a and 61b. The outer peripheral surface of the sliding member 63 comes into contact with the inner peripheral surface of the inner conductor 53 without play, and the sliding member 63 slides up and down the inner conductor 53 by rotating the

slug movement shafts

64a and 64b. It is supposed to be. That is, the inner peripheral surface of the inner conductor 53 functions as a sliding guide for the

slugs

61a and 61b. The width of the slit 53a is preferably 5 mm or less. Thereby, as will be described later, the microwave power leaking into the inner conductor 53 can be substantially eliminated, and the radiation efficiency of the microwave power can be kept high.

As a resin material constituting the sliding member 63, a resin having good sliding property and relatively easy to process, for example, a polyphenylene sulfide (PPS) resin can be mentioned as a suitable material.

The

slag moving shafts

64 a and 64 b extend through the reflecting plate 58 to the slag driving unit 70. A bearing (not shown) is provided between the

slug moving shafts

64a and 64b and the reflection plate 58. A bottom plate 67 made of a conductor is provided at the lower end of the inner conductor 53. The lower ends of the

slag moving shafts

64a and 64b are normally open ends to absorb vibration during driving, and a bottom plate 67 is provided at a distance of about 2 to 5 mm from the lower ends of the

slag moving shafts

64a and 64b. It has been. The bottom plate 67 may be used as a bearing portion, and the lower ends of the

slag moving shafts

64a and 64b may be supported by the bearing portion.

The slag drive unit 70 has a casing 71,

slag moving shafts

64a and 64b extend into the casing 71, and gears 72a and 72b are attached to the upper ends of the

slag moving shafts

64a and 64b, respectively. The slag drive unit 70 is provided with a motor 73a that rotates the slag movement shaft 64a and a motor 73b that rotates the slag movement shaft 64b. A gear 74a is attached to the shaft of the motor 73a, and a gear 74b is attached to the shaft of the motor 73b. The gear 74a meshes with the gear 72a, and the gear 74b meshes with the gear 72b. Accordingly, the slag movement shaft 64a is rotated by the motor 73a via the

gears

74a and 72a, and the slag movement shaft 64b is rotated by the motor 73b via the gears 74b and 72b. The

motors

73a and 73b are, for example, stepping motors.

Note that the slag moving shaft 64b is longer than the slag moving shaft 64a and reaches the upper side. Therefore, the positions of the gears 72a and 72b are vertically offset, and the

motors

73a and 73b are also vertically offset. Thereby, the space of a power transmission mechanism such as a motor and gears can be reduced, and the casing 71 that accommodates them can have the same diameter as the outer conductor 52.

On the

motors

73a and 73b,

increment type encoders

75a and 75b for detecting the positions of the

slugs

61a and 61b are provided so as to be directly connected to these output shafts.

The positions of the

slags

61a and 61b are controlled by the slag controller 68. Specifically, the slag controller 68 controls the

motors

73a and 73b based on the impedance value of the input end detected by an impedance detector (not shown) and the positional information of the

slags

61a and 61b detected by the

encoders

75a and 75b. The impedance is adjusted by sending a signal and controlling the positions of the

slugs

61a and 61b. The slug controller 68 performs impedance matching so that the termination is, for example, 50Ω. When only one of the two slugs is moved, a trajectory passing through the origin of the Smith chart is drawn, and when both are moved simultaneously, only the phase rotates.

The antenna unit 43 has a planar surface having a slot for radiating microwaves and a surface wave plasma generating antenna 81 for generating surface wave plasma, and a delay provided on the upper surface of the surface wave plasma generating antenna 81. And a corrugated material 82. A cylindrical member 82 a made of a conductor passes through the center of the slow wave member 82 to connect the bottom plate 67 and the surface wave plasma generating antenna 81. Therefore, the inner conductor 53 is connected to the surface wave plasma generating antenna 81 through the bottom plate 67 and the cylindrical member 82a. The slow wave material 82 and the surface wave plasma generating antenna 81 have a disk shape larger in diameter than the outer conductor 52. The lower end of the outer conductor 52 extends to the surface of the slow wave material 82, and the periphery of the slow wave material 82, the surface wave plasma generating antenna 81, and a top plate 83 to be described later is covered with a covered conductor 84.

The slow wave material 82 has a dielectric constant larger than that of vacuum, and is made of, for example, fluorine resin or polyimide resin such as quartz, ceramics, polytetrafluoroethylene, etc. Therefore, the antenna has a function of shortening the wavelength of the microwave to make the antenna smaller. The slow wave material 82 can adjust the phase of the microwave depending on its thickness, and the thickness thereof is adjusted so that the surface wave plasma generating antenna 81 becomes a “wave” of a standing wave. Thereby, reflection can be minimized and the radiation energy of the surface wave plasma generating antenna 81 can be maximized.

On the further tip side of the surface wave plasma generating antenna 81, a top plate 83 made of a dielectric member, for example, quartz or ceramics, for forming an electric field for generating surface wave plasma and vacuum-sealing is disposed. ing. Then, the microwave amplified by the main amplifier 47 passes between the peripheral walls of the inner conductor 53 and the outer conductor 52, passes through the top plate 83 from the surface wave plasma generating antenna 81, and is radiated to the space in the chamber 1. .

For example, as shown in FIG. 7, the surface wave plasma generating antenna 81 is formed in a disc shape (planar shape) as a whole, and six slots 131 are formed in a circumferential shape. Yes. All of these slots 131 have the same shape and are formed in an elongated shape along the circumference. The joint portion between adjacent ones of the slots 131 is configured such that the end of one slot 131 and the end of the other slot 131 overlap each other. That is, the center portion of the slot 131 is in a state where one end portion on the outer side and the other end portion on the inner side are connected, and an annular region 132 indicated by a two-dot chain line including six slots 131 is included. In FIG. 1, one end portion that coincides with the outer periphery and the other end portion that coincides with the inner periphery are obliquely connected, and the joint portion between the slots adjacent to each other in the circumferential direction is covered with the slot. In this way, there is no portion without slots in the circumferential direction.

The slot 131 has a length of (λg / 2) −δ. Here, λg is the effective wavelength of the microwave, and δ is a fine adjustment component (including 0) that is finely adjusted so that the uniformity of the electric field strength is increased in the circumferential direction (angular direction). The length of the slot 131 is not limited to about λg / 2, but may be any length obtained by subtracting a fine adjustment component (including 0) from an integral multiple of λg / 2. The slot 131 has a substantially equal length at the center, and one end and the other end (overlap portion) on both sides thereof. That is, the central portion has a length of (λg / 6) −δ ₁ , and the end portions on both sides thereof have lengths of (λg / 6) −δ ₂ and (λg / 6) −δ ₃ , respectively. However, δ ₁ , δ ₂ , and δ ₃ are fine adjustment components (including 0) for fine adjustment to increase the uniformity of the electric field strength in the circumferential direction (angular direction). Since it is preferable that the lengths of the overlapping portions of adjacent slots are equal, it is preferable that δ ₂ = δ ₃ . In the present embodiment, the length of one slot 131 is about λg / 2, and since there are six, the total length is about 3λg, of which the overlap portion is (λg / 6) × Since 6 = λg and the total length is 2λg, the antenna is substantially equivalent to a conventional antenna in which four slots having a length of about λg / 2 are arranged circumferentially. The slot 131 is formed such that its inner circumference is at a position of (λg / 4) ± δ ′ from the center of the surface wave plasma generating antenna 81. However, δ ′ is a fine adjustment component (including 0) for fine adjustment to make the electric field intensity distribution in the radial direction uniform. Note that the length from the center to the inner periphery of the slot is not limited to about λg / 4, and may be any length obtained by adding a fine adjustment component (including 0) to an integral multiple of λg / 4.

Such a surface wave plasma generating antenna 81 can avoid the electromagnetic wave intensity from being weakened at the slot-to-slot joint, and can improve the plasma uniformity in the circumferential direction (angular direction).

However, the number of slots is not limited to six, and the same effect can be obtained even when, for example, five, four, or seven or more. The slot shape of the surface wave plasma generating antenna 81 is not limited to that shown in FIG. 7. For example, a plurality of arc-shaped slots may be formed uniformly on the circumference.

As shown in FIGS. 3 and 7, the slow wave member 82 and the surface wave plasma generating antenna 81 have sensor insertion holes that penetrate the slots 131 and reach the surface of the top plate 83 in regions corresponding to the inside of the slots 131. 110 is provided. The number of the sensor insertion holes 110 is n times the number of the slots 131 of the surface wave plasma generating antenna 81 (n is an integer of 1 or more), and the same circle around the axis of the waveguide 44 having the coaxial structure. It is provided evenly (equal angle) on the circumference. In the case of FIG. 7, the number of slots 131 is six, and the number of sensor insertion holes 110 is six (n = 1).

The electric field sensor 112 or the plasma light emission sensor 113 is inserted into at least one of the sensor insertion holes 110 through the reflective skin 111 made of a cylindrical metal (see FIG. 3). A plug for preventing electromagnetic wave leakage (dummy plug) may be inserted into the sensor insertion hole 110 in which the electric field sensor 112 or the plasma emission sensor 113 is not inserted.

The electric field sensor 112 has a coaxial cable shape and has a monopole antenna at the tip. Specifically, as shown in FIG. 8, the electric field sensor 112 includes an inner conductor 121, an outer outer conductor 122, and a dielectric 123 such as Teflon (registered trademark) provided therebetween. In addition, the tip portion of about 3 mm is a notch 124 where the outer conductor 122 does not exist, and the tip constitutes a monopole antenna having only the inner conductor 121. And by making the front-end | tip 125 of this electric field sensor 112 contact or adjoin to the back surface of the top plate 83, electromagnetic waves are input from the notch part 124 of a front-end | tip, and a signal can be taken out.

As the diameter of the sensor insertion hole 110, for example, about 3 mm can be used. Thereby, a standard coaxial cable (inner conductor: φ0.51 mm, outer conductor: φ2.19 mm, dielectric: φ1.67 mm) can be used as the electric field sensor 112.

In the case of the present embodiment, single-mode surface wave plasma is generated. Therefore, the standing wave generated in the dielectric body constituting the top plate 83 has the same pattern, and the position of the abdominal node of the standing wave is fixed. The magnitude of the standing wave increases with the antenna output power. The electric field sensor 112 uses this. That is, the output power from the surface wave plasma generating antenna 81 can be directly monitored if the electric field sensor 112 is brought into contact with or close to the back surface of the top plate 83 while avoiding the positions of antinodes and nodes of the standing wave. Become.

The monitor power in this case is as shown in FIG. 9, for example. In this case, since the monitor current flowing in the monitor line changes depending on the length of the monopole portion at the tip, desired monitor power can be extracted by adjusting the length of the monopole portion. The intensity of the detected current can also be adjusted by adjusting the strength of the electric field detected by adjusting the distance between the tip of the electric field sensor 112 and the back surface of the dielectric top plate 83.

The monitor current value flowing through the monitor line is proportional to the electric field, but the power passing through the top plate 83 is proportional to the square of the electric field, so the square of the monitor current value is proportional to this passing power. The relationship is obtained. If the power loss from the power source to the top plate 83 is negligibly small until propagation, and almost all energy is absorbed by the plasma, the input power and the passing power at the top plate 83 are almost equal.

Whether the signal detected by the electric field sensor 112 is measured by the measuring unit 126 and compared with a predetermined value stored in advance in the measuring unit 126, so that electromagnetic waves are normally emitted from the surface wave plasma generating antenna 81. It is possible to grasp whether or not. Further, since the electric field sensor 112 is in contact with the plasma via the top plate 83, for example, the change in the output electric field value of the surface wave plasma generating antenna 81 when the plasma conditions (gas type, pressure, etc.) are changed. By monitoring, it is possible to grasp a change in plasma impedance. Further, it can be used as means for detecting plasma ignition / misfire.

In the case where the sensor to be inserted into the sensor insertion hole 110 is the plasma emission sensor 113, it is possible to detect whether or not the plasma is actually ignited when the microwave radiation mechanism 41 emits microwaves. . As the plasma light emission sensor 113, a general optical sensor is used, and light emission of plasma is directly detected through the top plate 83 by a light receiving element. Thereby, sufficient light emission intensity can be obtained and high detection accuracy can be obtained.

The signal detected by the plasma emission sensor 113 is taken into the power amplifier control board in the measurement unit 126, and if the detection signal cannot be detected within a predetermined time (for example, 5 seconds) after the power is turned on. It can be considered that the power is turned off because the plasma is not ignited.

In the present embodiment, the main amplifier 47, the tuner 60, and the surface wave plasma generating antenna 81 are arranged close to each other. The tuner 60 and the surface wave plasma generating antenna 81 constitute a lumped constant circuit existing within a half wavelength, and the surface wave plasma generating antenna 81, the slow wave material 82, and the top plate 83 are combined. Since the resistance is set to 50Ω, the tuner 60 is directly tuned with respect to the plasma load, and can efficiently transmit energy to the plasma.

Each component in the surface wave plasma processing apparatus 100 is controlled by a control unit 140 including a microprocessor. The control unit 140 includes a storage unit that stores a process sequence of the surface wave plasma processing apparatus 100 and a process recipe that is a control parameter, an input unit, a display, and the like, and controls the plasma processing apparatus according to the selected process recipe. It has become.

<Operation of surface wave plasma processing apparatus>
Next, the operation in the surface wave plasma processing apparatus 100 configured as described above will be described.
First, the wafer W is loaded into the chamber 1 and placed on the susceptor 11. Then, while introducing a plasma gas, for example, Ar gas, into the chamber 1 from the plasma gas supply source 27 through the pipe 28 and the plasma gas introduction member 26, a microwave is introduced into the chamber 1 from the microwave plasma source 2. A surface wave plasma is generated.

After generating the surface wave plasma in this manner, a processing gas, for example, an etching gas such as Cl ₂ gas is discharged from the processing gas supply source 25 into the chamber 1 through the pipe 24 and the shower plate 20. The discharged processing gas is excited by plasma that has passed through the space 23 of the shower plate 20 to be converted into plasma, and plasma processing, for example, etching processing is performed on the wafer W by the plasma of the processing gas.

When generating the surface wave plasma, in the microwave plasma source 2, the microwave power oscillated from the microwave oscillator 32 of the microwave output unit 30 is amplified by the amplifier 33 and then distributed to a plurality by the distributor 34. The distributed microwave power is guided to the microwave supply unit 40. In the microwave supply unit 40, the microwave power distributed in plural is individually amplified by the main amplifier 47 constituting the solid state amplifier, and is supplied to the waveguide 44 of the microwave radiating mechanism 41. The impedance is automatically matched by 60, and is radiated into the chamber 1 through the surface wave plasma generating antenna 81 and the top plate 83 of the antenna unit 43 in a state where there is substantially no power reflection and is spatially synthesized.

The power supply to the waveguide 44 of the microwave radiation mechanism 41 is performed from the side surface because the slag driving unit 70 is provided on the extension line of the axis of the waveguide 44 having the coaxial structure. That is, when the microwave (electromagnetic wave) propagating from the coaxial line 56 reaches the first pole 92 of the power feeding antenna 90 at the microwave power introduction port 55 provided on the side surface of the waveguide 44, it follows the antenna body 91. Then, the microwave (electromagnetic wave) propagates and radiates the microwave (electromagnetic wave) from the second pole 93 at the tip of the antenna body 91. Further, the microwave (electromagnetic wave) propagating through the antenna main body 91 is reflected by the reflecting portion 94 and is combined with the incident wave to generate a standing wave. When a standing wave is generated at the position where the feed antenna 90 is disposed, an induced magnetic field is generated along the outer wall of the inner conductor 53, and an induced electric field is generated by being induced thereby. By these chain actions, microwaves (electromagnetic waves) propagate in the waveguide 44 and are guided to the antenna unit 43.

At this time, in the waveguide 44, the maximum microwave (electromagnetic wave) power can be transmitted to the waveguide 44 having the coaxial structure by reflecting the microwave (electromagnetic wave) radiated from the feeding antenna 90 by the reflection plate 58. However, in that case, in order to effectively combine the reflected wave, it is preferable that the distance from the feed antenna 90 to the reflector 58 is a half wavelength of about λg / 4.

The microwave radiation mechanism 41 is extremely compact because the antenna unit 43 and the tuner 60 are integrated. For this reason, the microwave plasma source 2 itself can be made compact. Further, the main amplifier 47, the tuner 60, and the surface wave plasma generating antenna 81 are provided close to each other. In particular, the tuner 60 and the surface wave plasma generating antenna 81 can be configured as a lumped constant circuit, and the surface wave plasma. By designing the combined resistance of the generating antenna 81, the slow wave member 82, and the top plate 83 to 50Ω, the tuner 60 can tune the plasma load with high accuracy. Further, since the tuner 60 constitutes a slag tuner that can perform impedance matching by moving the two

slags

61a and 61b, the tuner 60 is compact and has low loss. Further, the tuner 60 and the surface wave plasma generating antenna 81 are close to each other, constitute a lumped constant circuit and function as a resonator, and thereby impedance mismatching up to the surface wave plasma generating antenna 81 is achieved. Can be eliminated with high accuracy, and the inconsistent portion can be substantially made into a plasma space. Therefore, the tuner 60 enables high-precision plasma control.

Furthermore, since the drive transmission part, the drive guide part, and the holding part for driving the slag are provided inside the inner conductor 53, the drive mechanism of the

slags

61a and 61b can be reduced in size. The microwave radiation mechanism 41 can be reduced in size.

By the way, in an apparatus that radiates electromagnetic waves from an antenna to generate plasma as in this embodiment, it is extremely important to know the effective power actually radiated from the antenna. Conventionally, not the power radiated from the antenna but the power output from the power source or the power between the power source and the tuner has been detected. However, for example, when power loss or electromagnetic field leakage occurs between the tuner and the antenna, even when power of 1000 W is output from the power source, for example, only 500 W is radiated from the antenna. There is also a possibility. In such a case, the member may be altered, deformed, or burned out.

On the other hand, it is extremely important to monitor whether the plasma is actually ignited when the plasma source is turned on. This is because if the plasma does not ignite or if it is ignited and then misfired, proceeding the process as it is, the wafer that is not actually processed is assumed to have been processed, and the next process It becomes a defective product. In addition, when power is sent to the chamber when the plasma is not lit, power is sent with almost no load, so in some cases excessive reflected power is sent from the chamber to the power supply. The power source or the line connecting the power source and the chamber may cause a great deal of damage. Conventionally, a plasma emission sensor has been used in a window formed on the side of the chamber or the like as means for detecting such poor ignition or misfire of plasma. However, in the case of such a plasma emission sensor, even if it is possible to grasp whether or not the whole plasma is ignited, when using a plurality of microwave radiation mechanisms 41 as in the present embodiment, a part of the plasma emission mechanism 41 is plasma. Even if there is something that is not lit (lit), it is difficult to detect it.

Therefore, in this embodiment, each microwave radiation mechanism 41 is provided with a sensor insertion hole 110, and the electric field sensor 112 or the plasma emission sensor 113 is inserted into the sensor insertion hole 110, so that the surface wave of one microwave radiation mechanism 41 is obtained. The power value of the microwave radiated from the plasma generating antenna 81 or the presence / absence of plasma ignition (lighting) in one microwave radiation mechanism 41 is grasped.

As described above, the electric field sensor 112 has a monopole antenna structure by providing the notch 124 where the outer conductor 122 does not exist at the tip of the coaxial cable, so that the electromagnetic wave from the top plate 83 can be obtained via the notch 124 at the tip. Is detected, and the output power from the surface wave plasma generating antenna 81 can be directly monitored.

Whether the signal detected by the electric field sensor 112 is measured by the measuring unit 126 and compared with a predetermined value stored in advance in the measuring unit 126, so that electromagnetic waves are normally emitted from the surface wave plasma generating antenna 81. It is possible to grasp whether or not. For example, when an appropriate electron density is obtained when supplying 1000 W of power from a power source and an appropriate process result is obtained, the electric field value (for example, peak value or If the effective value) is monitored, it can be determined whether or not normal power is radiated from the surface wave plasma generating antenna 81 by comparing the measured value with the actually measured value.

Further, since the electric field sensor 112 is located on the side irradiated with the microwave and is in contact with the plasma via the top plate 83, for example, surface wave plasma when the plasma conditions (gas type, pressure, etc.) are changed. By monitoring the change in the output electric field value of the generating antenna 81, it is possible to grasp the change in the plasma impedance. If the value of plasma impedance increases, the electric field value increases. Thereby, it becomes possible to grasp | ascertain the electric power value for obtaining suitable plasma conditions according to a process.

Furthermore, the electric field sensor 112 can also be used as means for detecting plasma ignition / misfire. Specifically, ignition / misfire can be determined by comparing a signal from the electric field sensor 112 with a previously measured ignition signal. Accordingly, it is not necessary to install a window on the side surface of the chamber as in the prior art, and it is possible to realize ignition / misfire detection means that is much cheaper than a conventional structure.

Since the plasma light emission sensor 113 directly detects the light emission of the plasma through the top plate 83 by the light receiving element, it is possible to obtain sufficient light emission intensity, and to detect the plasma ignition or misfire directly under each microwave radiation mechanism 41 with high accuracy. be able to.

In this case, it is preferable to detect these at a position corresponding to the inside of the slot of the surface wave plasma generating antenna 81 in order to grasp the power value and the presence or absence of plasma ignition with high accuracy. For this purpose, it is necessary to provide a sensor insertion hole at a position corresponding to the inside of the slot of the slow wave member 82 and the surface wave plasma generating antenna 81, but one sensor insertion hole is provided at a position corresponding to the inside of the slot. If formed, the electromagnetic wave in the slow wave material 82 is disturbed, and the non-uniform electromagnetic wave is emitted into the plasma, and the electric field distribution is decentered.

For example, FIG. 11A shows a result of electric field simulation in the case where a surface wave plasma generating antenna having five slots is used and one sensor insertion hole is provided. The electric field distribution is eccentric to the sensor insertion hole side. I understand.

Therefore, in this embodiment, the number of sensor insertion holes 110 that is n times the number of the slots 131 of the surface wave plasma generating antenna 81 (n is an integer of 1 or more) is centered on the axis of the waveguide 44 having the coaxial structure. The electric field sensor 112 or the plasma light emitting sensor 113 is inserted into at least one of them on the same circumference. As a result, the influence of the sensor insertion hole on the electromagnetic waves cancels out, and the power output from the antenna and the plasma state immediately below the antenna can be detected without disturbing the electric field distribution.

In FIG. 11B, in a surface wave plasma generating antenna having five slots, five sensor insertion holes are provided equally (at an equal angle) on the same circumference around the axis of the waveguide 44 having a coaxial structure. In this case, it is confirmed that the eccentricity of the electric field distribution can be prevented by forming the sensor insertion hole 110 according to this embodiment.

When five sensor insertion holes are evenly provided, and plugs are inserted into the sensor insertion holes, the variation in electric field due to the rotation angle of the plug (sensor insertion hole), the radial position, and the diameter of the plug (sensor insertion hole) is investigated. did. For comparison, the variation in the electric field was similarly investigated when no plug (sensor insertion hole) was provided and when only one plug (sensor insertion hole) was provided. FIG. 12 shows the results of variations in plug rotation angle, radial position, plug diameter, and electric field at that time. FIG. 13 is a diagram for explaining the rotation angle, radial position, and plug diameter of the plug in FIG.
Note that circle 1 in FIG. 12 is a variation in electric field in a region having a radius of 65 mm from the center of the antenna, and circle 2 is a variation in electric field in a region having a radius of 37.5 mm from the center of the antenna.

In FIG. No. 1 when no plug is provided. No. 2 is the case where only one plug is provided. Nos. 3 to 13 are cases where five plugs are provided. Nos. 3 to 7 were obtained by changing the rotation angle. Nos. 8 to 10 were obtained by changing the radial position. Nos. 11 to 13 have different plug diameters. As shown in FIG. 12, when there is only one plug, variation in the circumferential direction is large in the circle 2, but when five plugs are provided, the plug is centered on the waveguide center axis. If the same number of slots are provided on the same circumference, the electric field distribution equivalent to that without a plug can be obtained regardless of the rotation angle, radial position, and plug diameter. I understand that.

Also, since the tip of the sensor insertion hole 110 is in contact with the top plate 83, there is a concern that electromagnetic waves (microwaves) leak from the sensor insertion hole 110 and adversely affect measurement by the sensor. However, since the electromagnetic wave attenuates as the distance increases, the part where the influence of the electromagnetic wave is a concern, that is, the measurement substrate in the case of the electric field sensor 112, and the light receiving element in the case of the plasma light emission sensor 113 are Such adverse effects can be avoided by separating them to some extent. For example, when the wavelength of the microwave is 348 mm (frequency 860 MHz) and the diameter of the sensor insertion hole 110 is 3.0 mm, the attenuation constant is 50 dB at a position 4.0 mm away from the contact surface as shown in FIG. A sufficient damping constant is obtained. Therefore, in this case, if the measurement substrate of the electric field sensor 112 or the light receiving element of the plasma light emission sensor 113 is separated from the back surface of the top plate 83 by 4.0 mm or more, the influence of electromagnetic waves from the top plate 83 can be avoided. . Moreover, such an adverse effect can also be avoided by sufficiently reducing the diameter of the sensor insertion hole 110 compared to the wavelength used.

In the present embodiment, when the electric field sensor 112 is used as the sensor, the sensor insertion hole 110 is formed in the top plate 83, so that a narrow hole space is formed in the atmosphere and electric power is taken out therefrom. There is concern about power loss. However, the power to be extracted can be sufficiently attenuated (eg, −60 dB) with respect to the power output power by optimizing the diameter of the sensor insertion hole 110 and the monopole antenna of the electric field sensor 112, so that the power loss can be sufficiently reduced. Sufficient power can be taken out while reducing the size.

As described above, according to the present embodiment, the sensor insertion hole is located on the same circumference around the axis of the microwave transmission path in the region corresponding to the inside of the slot of the slow wave material and the surface wave plasma generating antenna. Since the number of slots is equal to n times (where n is an integer equal to or greater than 1), the effects of the sensor insertion holes on the electromagnetic waves cancel each other, and the electric field distribution is not disturbed. It is possible to detect the power and the plasma state directly under the antenna.

<Other applications>
The present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the idea of the present invention. For example, the configuration of the microwave output unit 30 and the microwave supply unit 40 is not limited to the above embodiment. Specifically, when it is not necessary to control the directivity of the microwave radiated from the antenna or to make it circularly polarized, the phase shifter is unnecessary.

In the above embodiment, the etching processing apparatus is exemplified as the plasma processing apparatus. However, the present invention is not limited to this, and the plasma processing apparatus can be used for other plasma processing such as film formation processing, oxynitride film processing, and ashing processing. Further, the substrate to be processed is not limited to the semiconductor wafer W, and may be another substrate such as an FPD (flat panel display) substrate typified by a substrate for LCD (liquid crystal display) or a ceramic substrate.

DESCRIPTION OF SYMBOLS 1; Chamber 2; Microwave plasma source 11; Susceptor 12; Support member 15; Exhaust pipe 16; Exhaust device 17; Carry-in / out port 20; Shower plate 30; Microwave output part 31; Microwave supply section 41; microwave radiation mechanism 43; antenna section 44; waveguide 52; outer conductor 53; inner conductor 54; feeding mechanism 55; microwave power introduction port 56; coaxial line 58; reflector 60; Surface wave plasma generating antenna 82; Slow wave material 83; Top plate 100; Surface wave plasma processing apparatus 110; Sensor insertion hole 112; Electric field sensor 113; Plasma emission sensor 140;

Claims

A microwave radiation mechanism is provided in a microwave transmission path for transmitting microwaves output from a microwave output unit in a surface wave plasma source for forming surface wave plasma in a chamber, and radiates microwaves into the chamber. There,
A surface wave plasma generating antenna for generating surface wave plasma by radiating the microwave transmitted through the microwave transmission path into the chamber through a slot;
A slow wave material made of a dielectric material provided on the upstream side of the surface wave plasma generating antenna of the microwave transmission path;
A dielectric provided on the downstream side of the surface wave plasma generating antenna of the microwave transmission path, and forming an electric field for generating the surface wave plasma by the microwave radiated from the surface wave plasma generating antenna Members,
An electric field sensor for detecting the electric field of the dielectric member in order to measure the electric power of the microwave radiated from the surface wave plasma generating antenna, or plasma for detecting light emission of the surface wave plasma through the dielectric member A luminescence sensor;
A sensor insertion hole provided so as to penetrate the slow wave material and the surface wave plasma generating antenna; and the electric field sensor or the plasma emission sensor is inserted;
Comprising
The sensor insertion hole is formed in a region corresponding to the inside of the slot of the slow wave material and the surface wave plasma generating antenna, n times the slot on the same circumference centered on the axis of the microwave transmission path. (Where n is an integer equal to or greater than 1) are formed uniformly,
The microwave radiation mechanism, wherein the electric field sensor or the plasma emission sensor is inserted into at least one of the sensor insertion holes.
The electric field sensor includes a coaxial cable having a monopole portion at a tip, and monitors an electric field generated in the dielectric member by bringing the monopole portion into contact with or in proximity to the dielectric member. The microwave radiation mechanism according to 1.
The electric field sensor has a function of grasping whether or not electromagnetic waves are normally radiated from the surface wave plasma generating antenna, a function of grasping a power value for obtaining an appropriate plasma condition according to a process, and a plasma. The microwave radiation mechanism according to claim 1, which has a function of detecting ignition or misfiring of a gas.
The microwave radiation mechanism according to claim 1, wherein the plasma light emission sensor includes a light receiving element that detects light emission of plasma through the dielectric member, and the light receiving element is in contact with or close to the dielectric member. .
The microwave radiation mechanism according to claim 1, wherein a plug for preventing electromagnetic wave leakage is inserted into the sensor insertion hole in which the electric field sensor or the plasma emission sensor is not inserted.
A microwave generation mechanism for generating a microwave, a microwave transmission path for transmitting the generated microwave, and a plurality of microwave radiation mechanisms provided in the microwave transmission path for radiating microwaves into the chamber A surface wave plasma source that radiates microwaves into the chamber to generate surface wave plasma by the gas supplied into the chamber,
The microwave radiation mechanism is
A surface wave plasma generating antenna for generating surface wave plasma by radiating the microwave transmitted through the microwave transmission path into the chamber through a slot;
A slow wave material made of a dielectric material provided on the upstream side of the surface wave plasma generating antenna of the microwave transmission path;
A dielectric provided on the downstream side of the surface wave plasma generating antenna of the microwave transmission path, and forming an electric field for generating the surface wave plasma by the microwave radiated from the surface wave plasma generating antenna Members,
An electric field sensor for detecting the electric field of the dielectric member in order to measure the electric power of the microwave radiated from the surface wave plasma generating antenna, or plasma for detecting light emission of the surface wave plasma through the dielectric member A luminescence sensor;
A sensor insertion hole provided so as to penetrate the slow wave material and the surface wave plasma generating antenna; and the electric field sensor or the plasma emission sensor is inserted;
Have
The sensor insertion hole is formed in a region corresponding to the inside of the slot of the slow wave material and the surface wave plasma generating antenna, n times the slot on the same circumference centered on the axis of the microwave transmission path. (Where n is an integer equal to or greater than 1) are formed uniformly,
The electric field sensor or the plasma emission sensor is a surface wave plasma source inserted into at least one of the sensor insertion holes.
A chamber for accommodating a substrate to be processed;
A gas supply mechanism for supplying gas into the chamber;
A microwave generation mechanism for generating microwaves, a microwave transmission path for transmitting the generated microwaves, and a plurality of microwave radiation mechanisms for radiating microwaves into the chamber are provided in the microwave transmission path. And a surface wave plasma source that radiates microwaves into the chamber and generates surface wave plasma by the gas supplied into the chamber,
A surface wave plasma processing apparatus for processing a substrate to be processed in the chamber with the surface wave plasma,
The microwave radiation mechanism is
A surface wave plasma generating antenna for generating surface wave plasma by radiating the microwave transmitted through the microwave transmission path into the chamber through a slot;
A slow wave material made of a dielectric material provided on the upstream side of the surface wave plasma generating antenna of the microwave transmission path;
A dielectric provided on the downstream side of the surface wave plasma generating antenna of the microwave transmission path, and forming an electric field for generating the surface wave plasma by the microwave radiated from the surface wave plasma generating antenna Members,
An electric field sensor for detecting the electric field of the dielectric member in order to measure the electric power of the microwave radiated from the surface wave plasma generating antenna, or plasma for detecting light emission of the surface wave plasma through the dielectric member A luminescence sensor;
A sensor insertion hole provided so as to penetrate the slow wave material and the surface wave plasma generating antenna; and the electric field sensor or the plasma emission sensor is inserted;
Have
The sensor insertion hole is formed in a region corresponding to the inside of the slot of the slow wave material and the surface wave plasma generating antenna, and n times the slot on the same circumference centered on the axis of the microwave transmission path. (Where n is an integer equal to or greater than 1) are formed uniformly,
The surface wave plasma processing apparatus, wherein the electric field sensor or the plasma emission sensor is inserted into at least one of the sensor insertion holes.