WO2013044210A2 - Stripping compositions having mixtures of alkylamides - Google Patents
Stripping compositions having mixtures of alkylamides Download PDFInfo
- Publication number
- WO2013044210A2 WO2013044210A2 PCT/US2012/056872 US2012056872W WO2013044210A2 WO 2013044210 A2 WO2013044210 A2 WO 2013044210A2 US 2012056872 W US2012056872 W US 2012056872W WO 2013044210 A2 WO2013044210 A2 WO 2013044210A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stripper
- photoresist
- alkylamide
- present
- weight
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Definitions
- This invention relates to a stripping composition containing mixtures of alkylamides, particularly to an alkylamide stripping
- composition applied to photoresist removal or to cleaning or removal of the aligning film is
- TFT-LCD thin-film transistor liquid crystal display
- stripping agent stripper
- the known composition of the stripper is pretty complicated, and it may consist of 4-6 kinds of chemical substances and therefore be very difficult to recover, and the stripper after recovery is required to undergo a very complicated reduction process before it can be recombined. Therefore, through recovery of known strippers in actual application it is difficult to attain reasonable economic returns, thus reducing the plant's intention to use the stripper recovery system. In this way, not only is the opportunity to reduce costs lost, but it will result in a considerable burden on the environment.
- KR2010033653 Disclosed in KR2010033653 is an anhydrous stripper that comprises 70- 99 wt% of a mixture of N-methylformaldehyde (NMF) and N, N- dimethylacetamide (DMAC) and 0.1 -10 wt% tetraethylene glycol. And the weight ratio of N-methylformaldehyde to N, N-dimethylacetamide is
- 1 1 to 2 (i.e., less than or equal to 1 ).
- a stripper containing a mixture of alkylamides wherein N-methylformaldehyde (NMF), N, N-dimethylacetamide (DMAC), and water are mixed to serve as a photoresist stripper, aligning film cleaner, or aligning film stripper.
- NMF N-methylformaldehyde
- DMAC N-dimethylacetamide
- an alkylamide stripper As an alkylamide stripper made with N-methylformaldehyde and N, N- dimethylacetamide as the two primary components, it can easily strip a photoresist without damaging the copper film or copper alloy film exposed below the photoresist, therefore, the alkylamide stripper has the advantage of being applicable to the manufacturing process of copper.
- a stripper containing a mixture of alkylamides and as the alkylamide stripper consists only of two primary components with a difference in boiling point under atmospheric pressure greater than 30°C, it can be easily recovered through the technology of fractional distillation, and the alkylamide stripper recovered can be recombined and reduced and recycled, thus attaining the effects of reduction of production cost and environmental protection.
- the present invention provides an alkylamide stripper that comprises N-methylformaldehyde, which accounts for 50- 70% of the total weight; N, N-dimethylacetamide, which accounts for 30-50% of the total weight; and water, which accounts for the remainder of the total weight.
- alkylamide stripper is not corrosive to copper or copper alloy, therefore, it is well suited to the manufacturing process of copper.
- alkylamide stripper is simple in composition, has a low evaporation rate and low viscosity, and is miscible with water, so that no other additional solvents are required to remove said stripper, therefore, the used alkylamide stripper can be easily recovered, to attain the effects of reduction of production cost and environmental protection.
- Figure 1 to Figure 3 are schematic diagrams of examples illustrating the flow process of the application of an alkylamide stripper of the present invention to the removal of a photoresist.
- Figure 4 is an optical microscope diagram of Example 1 .
- Figure 5 is a scanning electron microscope diagram of Example 1.
- the stripper of the present invention is an alkylamide stripper that comprises N-methylformaldehyde, N, N-dimethylacetamide, and water; the alkylamide stripper in the examples of the present invention can be expressed using the following formula:
- R" is methyl; R and R' are the same, being hydrogen or methyl.
- R and R' are both hydrogen, it is N-dimethylformaldehyde (CAS No.: 123- 39-7); whereas when R and R' are both methyl, it is N, N-dimethylacetamide (CAS No.: 127-19-5).
- alkylamide stripper of the present invention does not contain tetraethylene glycol.
- alkylamide stripper of the present invention primarily comprises N-methylformaldehyde, which accounts for 50-70% of the total weight; N, N-dimethylacetamide, which accounts for 30-50% of the total weight; and water, which accounts for the remainder of the total weight.
- N-methylformaldehyde in the alkylamide stripper of the present invention accounts for 50-70% of the total weight, preferably 55-65%, and more preferably 58-62%.
- N, N-dimethylacetamide in the alkylamide stripper of the present invention accounts for 30-50% of the total weight, preferably 35-45%, and more preferably 38-42%.
- Water in the alkylamide stripper of the present invention accounts for the remainder of the total weight, usually less than 5%, preferably less than 3%, more preferably less than 1 %, and most preferably less than 0.1 %.
- alkylamide stripper of the present invention basically does not contain water.
- Another specific example of the present invention is that the weight ratio of N-methylformaldehyde to N, N-dimethylacetamide is greater than 1 .
- the stripper of the present invention can be easily prepared through mixing various components at room temperature.
- a copper metal film 20 such as a copper film or copper alloy film
- the copper metal film 20 is coated with a photoresist 30, and the photoresist 30 is patterned, so that the photoresist 30 can be used as a shield.
- the copper metal film 20 not covered by the photoresist 30 is etched and removed through an etching process, thus making a copper circuit.
- the residual photoresist 30 on the copper metal film 20 can be removed using the alkylamide stripper of the present invention, so that the alkylamide stripper of the present invention can serve as a photoresist stripper for the photoresist 30, and as the alkylamide stripper is not corrosive to copper or copper alloy, therefore, it can protect the copper circuit from damage when the residual photoresist 30 is removed, thus reducing the resistance and capacitance delay (RC-Delay) effect of the electronic
- the stripper of the present invention can be used to make electronic components with copper or copper alloy as the circuit material.
- copper alloy with copper as the primary component refers to copper alloy containing greater than or equivalent to 90% in mass, and copper alloy containing other elements such as Sn, Ag, Mg, Ni, Co, Cr, Ti, Mo, Si or Al, etc.
- a specific example of the present invention is the alkylamide stripper of the present invention, and it is a photoresist stripper for removing the photoresist on the surface of the electronic component.
- the metal circuit of said electronic component as mentioned above is composed of copper or copper alloy.
- the implementation of the alkylamide stripper of the present invention puts the photoresist and/or the side wall polymer (SWP) in contact with the stripper of the present invention.
- Actual status such as temperature, time, etc., is to be determined by the properties and thickness of the photoresist material and/or the side wall polymer to be removed, and other factors such as familiarity by technical personnel in this field.
- photoresist stripping is a process wherein at a temperature in the range of 25-90°C the electronic component with the photoresist on the surface contacts (such as by means of spraying and dipping) the stripping composition of the present invention for a certain period of time (5-30 minutes), is washed with water, and the electronic component described is dried with an inert gas.
- the photoresist materials in the examples are organic polymer materials, including the electron beam photoresist, X-ray photoresist, ion beam photoresist, etc.
- organic polymer materials include n-photoresist containing phenol formaldehyde resin or poly (p-vinyl phenol), photoresist containing polymethyl methacrylate, etc.
- residues (side wall polymers) after etching, ion beam bombardment or plasma treatment in particular include: metal organic compounds and/or inorganic salts, oxides, hydroxides or residue that can be combined alone with the organic polymer resin of the photoresist to form a film or composition.
- Traditional substrates that technical personnel in this field are familiar with include but are not limited to silicon, silicon dioxide, aluminum, aluminum alloy, copper, copper alloy, etc., and the photoresist material and/or the side wall polymer can be removed from said substrate using the stripper of the present invention.
- a method to remove the photoresist from the surface of the electronic component consist of the following steps: at a temperature in the range of 25-90°C, the electronic component with the photoresist on the surface contacts the alkylamide stripper of the present invention for 5-30 minutes, to remove said photoresist.
- the metal circuit of said electronic component is composed of copper or copper alloy.
- a specific example of the method of the present invention is one wherein the alkylamide stripper composed of N-methylformaldehyde, which accounts for 50-70% of the total weight, N, N-dimethylacetamide, which accounts for 30-50% of the total weight, and water, which accounts for the remainder of the total weight, contacts the photoresist-containing electronic component at a
- Another specific example of the method of the present invention is one wherein the alkylamide stripper composed of N-methylformaldehyde, which accounts for 55-65% of the total weight, N, N-dimethylacetamide, which accounts for 35-45% of the total weight, and water, which accounts for the remainder of the total weight, contacts the photoresist-containing electronic component at a temperature in the range of 55-85°C for 5-30 minutes, thus also removing the photoresist.
- Yet another specific example of the method of the present invention is one wherein the alkylamide stripper composed of N-methylformaldehyde, which accounts for 58-62% of the total weight, N, N-dimethylacetamide, which accounts for 38-42% of the total weight, and water, which accounts for the remainder of the total weight, contacts the photoresist-containing electronic component at a temperature in the range of 60-80°C for 5-30 minutes, thus also removing the photoresist.
- the alkylamide stripper of the present invention can serve not only as a photoresist stripper for electronic components, but it is also applicable to stripping or cleaning aligning films having polyimide as the primary component.
- a specific example of the present invention is the alkylamide stripper of the present invention, which serves as an aligning film stripper or an aligning film cleaner, wherein said aligning film is composed of polyimide.
- the alkylamide stripper of the present invention not only is applicable to the manufacturing process of LCD or semi-conductor components, but as the alkylamide stripper is not corrosive to copper or copper alloy, it is also particularly applicable to the manufacturing process of copper to remove the photoresist or to stripping or cleaning the aligning film.
- the alkylamide stripper consists only of two primary components, which are N-methylformaldehyde and N, N-dimethylacetamide, with the difference in their boiling points under atmospheric pressure greater than 30°C, therefore, when the manufacturing process is over the alkylamide stripper can be easily separated from the liquid waste from the reaction and recovered through the technology of fractional distillation, and said alkylamide stripper can be easily recombined and reduced in accordance with the original percentage after the recovery, so as to recycle the alkylamide striper recovered, thus attaining the effects of reduction of production cost and environmental protection.
- the alkylamide stripper of the present invention is particularly useful and advantageous, for multiple reasons as described below.
- the stripper of the present invention is miscible with water, not corrosive, and basically nontoxic to human body and the environment. As its evaporation rate is slower than known strippers, it can be recycled many times, and without having to take complicated safety precautions. Meanwhile, as the waste of the coat stripped can be removed at any time, it is convenient for collection and treatment. At the same working temperature, the stripper of the present invention has even better stripping effects.
- the stripper of the present invention is simple in composition and easy to prepare, and all that is needed is to mix its primary components at room temperature, without having to take any special safety precautions for humans or the environment. The following is an even more detailed description of the present invention with examples that are absolutely not intended to restrict the applications of the present invention.
- a piece of copper foil of proper size (about 6 cm 26 cm, about 2.2 g) is cut off, and the surface of the copper foil is cleaned using a micro etching agent, to remove the oxides on the surface. After it is washed clean with deionized water and baked dry, the weight (initial weight) of the copper foil is accurately measured.
- the copper foil is placed in a flask containing 400 g of the stripper (the components are listed in Table 1 ), to test its corrosiveness for copper, and after it is heated at 80°C for 8 h, the weight of the copper foil is accurately measured. The weight loss of the copper foil is measured and its corrosion rate is calculated (See Table 2).
- the copper foil substrate is of the standard specifications of an LCD panel, the photoresist width is about 3 ⁇ , and the thickness is 1 -1 .5 ⁇ .
- Strippers of different formulas are heated to 80°C, the substrate to be tested is placed in the stripper for 5 seconds and taken out, then it is dipped in water for 3 seconds, before the water stain is blown dry using an air dryer.
- the residue of the photoresist before the stripping and after the stripping is observed using an optical microscope and scanning electron microscope, as shown in Figure 4 and Figure 5, and results of the assessment are listed on Table 3.
- Comparative Example 1 (pure NMF) and Comparative Example 2 (pure DMAC) are the worst in terms of the film-stripping effects, as there is some photoresist circuit pattern afterimage, and some back stain of the photoresist; Comparative Example 4 is slightly better than Comparative Example 1 and Comparative Example 2, as there is a small amount of photoresist residue, and also a small amount of back stain of the photoresist; and the other formulas can all effectively strip the photoresist, and the back stain of the photoresist is very little.
- the stripper needs to be heated to within a certain temperature range (60°C-90°C) before attaining the required stripping effect. However, at this operating temperature, safety becomes an important consideration.
- the flash point of DMAC is 63°C, while the flash point of NMF is 1 19°C. The flash point is tested using the closed cup ASTM D93 method, and the flash point of
- Comparative Example 3 is 80.5 °C, while that of Example 2 is 88.5 °C.
- the flash point of the stripper of the present invention is higher than that of known strippers (Comparative Example 3), and this helps with enhancing the safety of the factory operation.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014532066A JP2015503839A (en) | 2012-09-24 | 2012-09-24 | Stripping composition having a mixture of alkylamides |
KR1020147010936A KR20140071445A (en) | 2011-09-23 | 2012-09-24 | Stripping compositions comprising mixtures of alkylamides |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110285604.1A CN103019049B (en) | 2011-09-23 | 2011-09-23 | Stripping agent containing alkylamide mixture |
CN201110285604.1 | 2011-09-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2013044210A2 true WO2013044210A2 (en) | 2013-03-28 |
WO2013044210A3 WO2013044210A3 (en) | 2013-07-04 |
Family
ID=47018513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2012/056872 WO2013044210A2 (en) | 2011-09-23 | 2012-09-24 | Stripping compositions having mixtures of alkylamides |
Country Status (4)
Country | Link |
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KR (1) | KR20140071445A (en) |
CN (1) | CN103019049B (en) |
TW (1) | TWI567510B (en) |
WO (1) | WO2013044210A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105524627B (en) * | 2015-12-03 | 2017-12-01 | 阜阳欣奕华材料科技有限公司 | A kind of purification process and purification devices of liquid crystal aligning liquid waste liquid |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100033653A (en) | 2008-09-22 | 2010-03-31 | 에스케이에너지 주식회사 | Stripper composition for removing photoresist |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090072546A (en) * | 2007-12-28 | 2009-07-02 | 삼성전자주식회사 | Composition for removing photoresist and method of manufacturing array substrate using the same |
KR101579846B1 (en) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | Composition for removing a photoresist pattern and method of forming a metal pattern using the composition |
KR20110007828A (en) * | 2009-07-17 | 2011-01-25 | 동우 화인켐 주식회사 | Stripper composition for copper or copper alloy interconnection |
CN101750917A (en) * | 2009-09-25 | 2010-06-23 | 株式会社Lg化学 | Remover composition for photoresist and method for removing photoresist |
-
2011
- 2011-09-23 CN CN201110285604.1A patent/CN103019049B/en active Active
-
2012
- 2012-09-24 KR KR1020147010936A patent/KR20140071445A/en not_active Application Discontinuation
- 2012-09-24 TW TW101134879A patent/TWI567510B/en active
- 2012-09-24 WO PCT/US2012/056872 patent/WO2013044210A2/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100033653A (en) | 2008-09-22 | 2010-03-31 | 에스케이에너지 주식회사 | Stripper composition for removing photoresist |
Also Published As
Publication number | Publication date |
---|---|
WO2013044210A3 (en) | 2013-07-04 |
CN103019049B (en) | 2014-10-08 |
TWI567510B (en) | 2017-01-21 |
KR20140071445A (en) | 2014-06-11 |
TW201317721A (en) | 2013-05-01 |
CN103019049A (en) | 2013-04-03 |
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