WO2013034404A1 - Vacuum coating apparatus - Google Patents

Vacuum coating apparatus Download PDF

Info

Publication number
WO2013034404A1
WO2013034404A1 PCT/EP2012/065865 EP2012065865W WO2013034404A1 WO 2013034404 A1 WO2013034404 A1 WO 2013034404A1 EP 2012065865 W EP2012065865 W EP 2012065865W WO 2013034404 A1 WO2013034404 A1 WO 2013034404A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
substrate carrier
substrate
vacuum coating
coating apparatus
Prior art date
Application number
PCT/EP2012/065865
Other languages
English (en)
French (fr)
Inventor
Frank Fuchs
Andreas Geiss
Michael Neumayer
Guido Mahnke
Harald Rost
Michael Klosch-Trageser
Tobias Bergmann
Original Assignee
Schmid Vacuum Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Vacuum Technology Gmbh filed Critical Schmid Vacuum Technology Gmbh
Publication of WO2013034404A1 publication Critical patent/WO2013034404A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096Flat-bed apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow
    • C23C16/45591Fixed means, e.g. wings, baffles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Definitions

  • the invention relates to a vacuum coating apparatus having an evacu- able coating chamber, in which there is provided a substrate carrier for holding a substrate to be coated, having an electrode above the substrate carrier, having a counter-electrode, and having a gas feed having at least one gas outlet opening for feeding process gases into the coating chamber.
  • Such vacuum coating apparatuses are known in principle (cf., for example, US 6,626,186 B1 ). They are used for numerous coating tasks. This may be for example a CVD (Chemical Vapour Deposition) method or a PECVD (Plasma Enhanced Chemical Vapour Deposition) method. In the case of the latter, an RF voltage is applied between the electrode and the counter-electrode, as a result of which a plasma is generated.
  • CVD Chemical Vapour Deposition
  • PECVD Pullasma Enhanced Chemical Vapour Deposition
  • an RF voltage is applied between the electrode and the counter-electrode, as a result of which a plasma is generated.
  • Such methods are used for example in the production of solar cells, for instance in order to apply a nitride coating in order to passivate the surface of solar cells.
  • a problem with such processes is clean implementation of the process in order to apply a contaminant-free coating of constant thickness to the substrate surface, the coating being as uniform as possible.
  • the coating result is influenced here by numerous process parameters, such as the gas composition of the reaction gases, the temperature of the substrate to be coated, the temperature within the coating chamber, the distance between the electrode and the counter-electrode, the voltage or frequency applied, the flow profile of the process gases, and further parameters.
  • DE 10 2008 026 000 A1 discloses a vacuum coating apparatus in which a first process gas is let into the vacuum chamber over the entire width of the surface to be coated of a substrate, a second process gas is let into the vacuum chamber in the region of the narrow sides of the substrate, and process gas is extracted by suction from the narrow sides of the substrate during the coating.
  • the relevant vacuum chamber is designed for a continuous process using a coating source for instance in the form of a linear magnetron sputtering source.
  • the invention is directed to the object of disclosing a vacuum coating apparatus wherein the coating process can be carried out more uniformly than in previous designs and with high stability in a manner largely free of contaminants. Furthermore, an improved vacuum coating method with use of a voltage between an electrode and a counter-electrode with a feed of process gas shall be disclosed, the method allowing implementation of the process which is uniform and stable.
  • the distance between the electrode and the counter-electrode is fixedly specified
  • the distance between the substrate carrier, on which the substrate is held, and the electrode can be altered.
  • the coating process can be adjusted to different conditions. Altered conditions can be taken into account during numerous coating cycles and coating processes that deviate over time can be stabilized by adapting the distance between the electrode and the counter-electrode.
  • the vacuum coating apparatus operates preferably in batch mode. It may be for instance a PECVD method or a CVD method.
  • a lifting device by means of which the substrate carrier is movable.
  • the electrode vertically adjustable in the case of adjustment of the substrate carrier by means of a lifting device, an advantageous embodiment is achieved in particular when the vacuum coating apparatus is configured with two planes arranged one above the other, between which the substrate carrier can in any case be moved by a lifting device, in order in this way to be able to achieve better throughput in a batch installation.
  • the upper plane is used for coating
  • the lower plane serves as a buffer for fully coated substrates and allows increased throughput in conjunction with a suitable handling device.
  • the distance between the electrode and the substrate carrier is automatically adjustable, preferably settable by means of a controller depending on at least one coating parameter.
  • the object of the invention is also achieved by a method for vacuum coating a substrate with application of a voltage between an electrode located opposite the substrate and a counter-electrode, with a feed of process gas into the coating chamber, wherein a distance between the electrode and the counter-electrode is set, preferably automatically controlled depending on at least one process parameter.
  • a method for vacuum coating a substrate with application of a voltage between an electrode located opposite the substrate and a counter-electrode, with a feed of process gas into the coating chamber, wherein a distance between the electrode and the counter-electrode is set, preferably automatically controlled depending on at least one process parameter.
  • the process gas is fed here via a multiplicity of gas outlet openings in the electrode and is directed by at least one flow guiding element in the direction of the substrate, suction extraction preferably taking place in the bottom region of the coating chamber.
  • the object is achieved in the case of a vacuum coating apparatus of the type mentioned at the beginning in that at least one flow guiding element extends between the electrode and the substrate carrier.
  • the process gases fed from above can be directed particularly uniformly in the direction of the substrate. A lateral escape of the process gases, before they have passed over the substrate surface, is prevented or minimized in this way.
  • the flow guiding element is in the form of a frame which extends from the electrode in the direction of the substrate carrier.
  • the at least one gas outlet opening is preferably arranged within a chamber enclosed by the flow guiding element.
  • a plurality of gas outlet openings are provided in the electrode.
  • the flow guiding element is arranged and dimensioned such that a gap of at most 20 mm, preferably of at most 10 mm, further preferably of at most 6 mm remains between the substrate carrier and the flow guiding element.
  • the flow guiding element is arranged and dimensioned such that a gap of about 2 to 20 mm, preferably of about 2 to 7 mm, particularly preferably of about 2 to 5 mm remains between the substrate carrier and the flow guiding element.
  • the remaining gap can be set in the specified range of between 2 and 20 mm such that optimized implementation of the process can be achieved.
  • the substrate carrier is held on a plate, preferably on a graphite plate, which is connected as the counter- electrode.
  • the substrate carrier is itself normally connected as the counter-electrode, in this way homogenization of the electrical field between the substrate and the electrode is achieved on account of the use of the plate. It is not the substrate itself that acts as the counter-electrode but rather the plate, which is preferably configured as a graphite plate. In this way, the substrate is enclosed in a more homogeneous field between the plate, which has been shifted further downwards, and the electrode. Particular advantages arise when the plate is configured as a graphite plate, since graphite is a particularly good heat conductor, and this contributes to a uniform temperature distribution.
  • the plate, or the graphite plate is heated.
  • the plate is embodied as a graphite plate.
  • the plate, on which the substrate carrier is held can be heated throughout.
  • a much more uniform temperature is ensured.
  • rapid homogenization of the temperature at the substrate is achieved in this way on account of the graphite plate which is heated throughout.
  • Figure 1 shows a cross section through a vacuum coating apparatus according to the invention in a highly simplified, schematic illustration
  • Figures 2a) to 2c) show a schematic illustration of a vacuum coating installation having three coating cells, one service cell and one loading cell, which are arranged in a pentagonal manner around a central distribution cell, wherein different types of use are illustrated in a) to c).
  • a vacuum coating apparatus according to the invention is designated overall by reference numeral 10.
  • the vacuum coating apparatus 10 has a coating chamber 12, which is surrounded in an air-tight manner by a bottom 16, walls 18 and a top 14.
  • the coating chamber 12 has an upper plane 38 and a lower plane 40 under the latter.
  • a substrate carrier 28 can be held both in the upper plane 38 and in the lower plane 40.
  • the substrate carrier 28 can be introduced into the upper plane 38 and extracted from the latter via an associated door 48 in the wall 18 by means of a handling device 52.
  • associated rollers 36 For holding in the upper plane, use is made here of associated rollers 36, which can be actuated from outside the coating chamber 12 by means of vacuum bushings and which can be lowered in the wall 18 by axial movement.
  • transport rollers 46 which serve to hold a substrate carrier 28, which can in turn, with the door 50 open, be introduced into and extracted from the lower plane 40 of the coating chamber 12 by means of an associated handling device 54.
  • a substrate carrier 28 located in the coating chamber 12 rests, with the transport rollers 36 retracted into the wall 18, on a plate 32 which consists preferably of graphite and can be moved in the vertical direction with the aid of a lifting device 42.
  • the lifting device 42 comprises a lifting drive 64, it being possible for this to be, for example, an electric cylinder, with the aid of which a piston can be displaced in a controlled manner in the vertical direction.
  • the plate 32 consisting of graphite is heatable, for which purpose a plurality of heating elements 34, for example resistance heating elements, are provided on its underside, the heating elements 34 being arranged in manner distributed uniformly over the entire undersurface of the plate 32.
  • a planar substrate 30 is held on the substrate carrier 28, which planar substrate 30 can be coated in the coating apparatus 10.
  • the plate 32 is connected as a counter-electrode.
  • an associated flat electrode 24 is arranged at a distance d from the substrate carrier 28.
  • a multiplicity of gas outlet openings 26 pass through the electrode 24, said gas outlet openings 26 extending in a manner distributed in the form of a grid over the entire surface of the electrode 24.
  • the gas outlet openings 26 serve to feed process gas for a vacuum coating process, it being possible for said process gas to be fed from outside the coating chamber 12 via a connected gas feed 22.
  • a voltage is applied (not illustrated), it being possible for this to be an RF voltage if a PECVD process under vacuum is intended to be carried out in the coating chamber.
  • a flow guiding element 70 is provided. This is a circumferentially closed frame which is fastened to the underside of the electrode 24 and extends downwards to just above the substrate carrier 28.
  • a gap s which is preferably in the range of about 2 to 20 mm, in particular 2 to 5 mm, and is preferably variable with the aid of the lifting device 42 depending on at least one process parameter.
  • the lifting device 42 is controlled via a central controller 60, as is indicated via a control line 66.
  • a sensor 62 is illustrated purely schematically in the coating chamber 12, the sensor 62 being coupled to the central controller 60 via a line 68. This can be, for example, a temperature sensor, a pressure sensor, a sensor for sensing a particular gas partial pressure, etc.
  • the senor 28 is merely indicated in a purely schematic manner and can be configured as any desired sensor, and that it is possible to provide a number of different sensors which are connected to the controller 60.
  • the distance d between the substrate carrier 28 and the electrode 24 or the gap s between the lower end of the flow guiding element or frame 70 and the substrate carrier 28 can be set in dependence on one of the process parameters with the aid of the controller 60, in order to ensure optimized implementation of the process.
  • the coating chamber 12 can be evacuated with the aid of a vacuum pump 20.
  • the vacuum pump 20 has a multiplicity of suction openings 21 , which are preferably arranged in a uniformly distributed manner in the bottom region of the coating chamber 12.
  • the graphite plate 32 which is connected as the counter-electrode, serves to homogenize the electrical field, since it is easier to make contact with the graphite plate 32 than with the substrate carrier. Furthermore, graphite is a very good heat conductor, which ensures a uniform temperature distribution over the entire surface. A particularly uniform temperature distribution thus arises over the entire graphite plate 32 and thus also over the substrate carrier 28 and ultimately the substrate 30, and this leads to a correspondingly homogeneous coating result.
  • the substrate carrier 28, having the substrate 30 located thereon can be moved into the lower plane 40 by means of the lifting device 42. With the doors 48 or 50 open, a new substrate carrier having a substrate to be coated can then be introduced by means of the handling device 52, as is indicated by the arrow 56. At the same time, the substrate carrier 28, having the fully coated substrate 30 located thereon, can be extracted from the lower plane 40, with the door 50 open, via the handling device 54, as is indicated by the arrow 58.
  • the installation preferably operates in a cyclical manner in batch mode.
  • FIG. 2 illustrates the basic structure of a vacuum coating installation which is designated overall by the number 80.
  • the vacuum coating installation 80 according to Figure 2a) comprises three coating cells P1 , P2, P3 and an identically constructed service cell M, and also a loading cell 82, said cells being arranged on the outside around a distribution cell 84 which has the form of a regular pentagon.
  • the coating cells P1 , P2, P3 and the maintenance cell M can each be coupled to the distribution cell 84 via an associated port or door.
  • Each coating cell P1 , P2, P3 and the maintenance cell M is formed by a vacuum coating apparatus 10 in the above-described manner.
  • the same coating process is carried out in all of the coating cells P1 , P2, P3.
  • the capacity of the coating cells P1 , P2, P3 is designed such that three coating cells suffice to ensure the nominal throughput.
  • the maintenance cell M has an identical structure to the coating cells P1 , P2, P3 and thus serves as reserve capacity. This means that the coating process operates at nominal throughput, while at the same time maintenance work, for example cleaning work and the like, can be carried out in one cell, in the maintenance cell M, without the nominal throughput being impaired.
  • Figure 2b shows a different state of the vacuum coating installation 80', in which the cell P3 previously used as a coating cell in the process as per Figure 2a) is now used as the maintenance cell M, and in which the previous maintenance cell M is now operated as the coating cell P3 in the process.
  • Figure 2c shows a further state of the vacuum coating installation 80", in which the cell previously used as the coating cell P2 as per Figure 2b), is now used as the maintenance cell M, while the previous maintenance cell is used as the coating cell P2.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/EP2012/065865 2011-09-05 2012-08-14 Vacuum coating apparatus WO2013034404A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011113294.9 2011-09-05
DE201110113294 DE102011113294A1 (de) 2011-09-05 2011-09-05 Vakuumbeschichtungsvorrichtung

Publications (1)

Publication Number Publication Date
WO2013034404A1 true WO2013034404A1 (en) 2013-03-14

Family

ID=46690503

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/065865 WO2013034404A1 (en) 2011-09-05 2012-08-14 Vacuum coating apparatus

Country Status (3)

Country Link
DE (1) DE102011113294A1 (pt-PT)
TW (1) TW201319298A (pt-PT)
WO (1) WO2013034404A1 (pt-PT)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956315A (zh) * 2014-05-22 2014-07-30 中国地质大学(北京) 一种电极间距可调的离子反应腔室及电极间距调整装置
CN113957388A (zh) * 2020-07-21 2022-01-21 宝山钢铁股份有限公司 一种采用导流板式结构均匀分配金属蒸汽的真空镀膜装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3052766B1 (fr) * 2016-06-15 2018-07-13 Thales Reacteur de fabrication de nanostructures par depot chimique en phase vapeur

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0272140A2 (en) * 1986-12-19 1988-06-22 Applied Materials, Inc. TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films.
US5399387A (en) * 1993-01-28 1995-03-21 Applied Materials, Inc. Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
US6189482B1 (en) * 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US6444277B1 (en) * 1993-01-28 2002-09-03 Applied Materials, Inc. Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates
US6626186B1 (en) 1998-04-20 2003-09-30 Tokyo Electron Limited Method for stabilizing the internal surface of a PECVD process chamber
WO2005104206A1 (en) * 2004-04-20 2005-11-03 Applied Materials, Inc. Method of controlling the uniformity of pecvd-deposited thin films
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US20070264443A1 (en) * 2006-05-09 2007-11-15 Applied Materials, Inc. Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits
US20090022908A1 (en) * 2007-07-19 2009-01-22 Applied Materials, Inc. Plasma enhanced chemical vapor deposition technology for large-size processing
DE102008026000A1 (de) 2008-05-29 2009-12-03 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Beschichtung flächiger Substrate
WO2012054200A2 (en) * 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US7279049B2 (en) * 2004-02-05 2007-10-09 Applied Materials, Inc. Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
US7740705B2 (en) * 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US20100044213A1 (en) * 2008-08-25 2010-02-25 Applied Materials, Inc. Coating chamber with a moveable shield

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0272140A2 (en) * 1986-12-19 1988-06-22 Applied Materials, Inc. TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films.
US5399387A (en) * 1993-01-28 1995-03-21 Applied Materials, Inc. Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
US6444277B1 (en) * 1993-01-28 2002-09-03 Applied Materials, Inc. Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates
US6189482B1 (en) * 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US6626186B1 (en) 1998-04-20 2003-09-30 Tokyo Electron Limited Method for stabilizing the internal surface of a PECVD process chamber
WO2005104206A1 (en) * 2004-04-20 2005-11-03 Applied Materials, Inc. Method of controlling the uniformity of pecvd-deposited thin films
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US20070264443A1 (en) * 2006-05-09 2007-11-15 Applied Materials, Inc. Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits
US20090022908A1 (en) * 2007-07-19 2009-01-22 Applied Materials, Inc. Plasma enhanced chemical vapor deposition technology for large-size processing
DE102008026000A1 (de) 2008-05-29 2009-12-03 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Beschichtung flächiger Substrate
WO2012054200A2 (en) * 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956315A (zh) * 2014-05-22 2014-07-30 中国地质大学(北京) 一种电极间距可调的离子反应腔室及电极间距调整装置
CN113957388A (zh) * 2020-07-21 2022-01-21 宝山钢铁股份有限公司 一种采用导流板式结构均匀分配金属蒸汽的真空镀膜装置

Also Published As

Publication number Publication date
DE102011113294A1 (de) 2013-03-07
TW201319298A (zh) 2013-05-16

Similar Documents

Publication Publication Date Title
US9165808B2 (en) Metal organic chemical vapor deposition device and temperature control method therefor
KR102382275B1 (ko) 반도체 기판 프로세싱 장치의 샤워헤드 모듈을 위한 볼 스크루 샤워헤드 모듈 조절기 어셈블리
TW201737290A (zh) 晶圓邊緣環升降解決方案
TWI719990B (zh) 基於改善邊緣膜厚均勻性之目的之電漿限制與晶圓邊緣的分離
CN105280518B (zh) 半导体基板的热处理装置
JP2010526446A5 (pt-PT)
KR20090036722A (ko) 기판 지지대 및 이를 구비하는 박막 증착 장치
US9845531B2 (en) Substrate processing system
TW201122151A (en) Hot wire chemical vapor deposition (CVD) inline coating tool
CN104718602B (zh) 基板处理装置
WO2013034404A1 (en) Vacuum coating apparatus
JP2022525107A (ja) 温度調整可能なマルチゾーン静電チャック
CN102272897A (zh) 等离子体处理装置以及等离子体cvd成膜方法
US20120309115A1 (en) Apparatus and methods for supporting and controlling a substrate
WO2013034411A2 (en) Vacuum coating apparatus
EP2202785A1 (en) Plasma treatment apparatus, plasma treatment method, and semiconductor element
KR102502149B1 (ko) Ald 균일성을 개선하기 위한 장치 및 방법들
KR101625478B1 (ko) 수직 적층식 히터를 구비한 박막 증착 장치 및 이를 이용한 박막 증착 방법
US20130108792A1 (en) Loading and unloading system for thin film formation and method thereof
KR101046910B1 (ko) 진공처리장치
TWI776104B (zh) 基板處理裝置及利用該裝置的基板處理方法
CN112553591A (zh) 一种热丝法化学气相沉积设备及化学气相沉积方法
KR102228545B1 (ko) 기판처리장치
TW201527583A (zh) 用於控制一氣體供應之方法及控制器與應用其之設備
KR101855655B1 (ko) 기판처리장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12748205

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12748205

Country of ref document: EP

Kind code of ref document: A1