WO2013034404A1 - Vacuum coating apparatus - Google Patents
Vacuum coating apparatus Download PDFInfo
- Publication number
- WO2013034404A1 WO2013034404A1 PCT/EP2012/065865 EP2012065865W WO2013034404A1 WO 2013034404 A1 WO2013034404 A1 WO 2013034404A1 EP 2012065865 W EP2012065865 W EP 2012065865W WO 2013034404 A1 WO2013034404 A1 WO 2013034404A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- substrate carrier
- substrate
- vacuum coating
- coating apparatus
- Prior art date
Links
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000000576 coating method Methods 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 56
- 239000011248 coating agent Substances 0.000 claims abstract description 54
- 239000007789 gas Substances 0.000 claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 14
- 239000010439 graphite Substances 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 description 11
- 238000009434 installation Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Definitions
- the invention relates to a vacuum coating apparatus having an evacu- able coating chamber, in which there is provided a substrate carrier for holding a substrate to be coated, having an electrode above the substrate carrier, having a counter-electrode, and having a gas feed having at least one gas outlet opening for feeding process gases into the coating chamber.
- Such vacuum coating apparatuses are known in principle (cf., for example, US 6,626,186 B1 ). They are used for numerous coating tasks. This may be for example a CVD (Chemical Vapour Deposition) method or a PECVD (Plasma Enhanced Chemical Vapour Deposition) method. In the case of the latter, an RF voltage is applied between the electrode and the counter-electrode, as a result of which a plasma is generated.
- CVD Chemical Vapour Deposition
- PECVD Pullasma Enhanced Chemical Vapour Deposition
- an RF voltage is applied between the electrode and the counter-electrode, as a result of which a plasma is generated.
- Such methods are used for example in the production of solar cells, for instance in order to apply a nitride coating in order to passivate the surface of solar cells.
- a problem with such processes is clean implementation of the process in order to apply a contaminant-free coating of constant thickness to the substrate surface, the coating being as uniform as possible.
- the coating result is influenced here by numerous process parameters, such as the gas composition of the reaction gases, the temperature of the substrate to be coated, the temperature within the coating chamber, the distance between the electrode and the counter-electrode, the voltage or frequency applied, the flow profile of the process gases, and further parameters.
- DE 10 2008 026 000 A1 discloses a vacuum coating apparatus in which a first process gas is let into the vacuum chamber over the entire width of the surface to be coated of a substrate, a second process gas is let into the vacuum chamber in the region of the narrow sides of the substrate, and process gas is extracted by suction from the narrow sides of the substrate during the coating.
- the relevant vacuum chamber is designed for a continuous process using a coating source for instance in the form of a linear magnetron sputtering source.
- the invention is directed to the object of disclosing a vacuum coating apparatus wherein the coating process can be carried out more uniformly than in previous designs and with high stability in a manner largely free of contaminants. Furthermore, an improved vacuum coating method with use of a voltage between an electrode and a counter-electrode with a feed of process gas shall be disclosed, the method allowing implementation of the process which is uniform and stable.
- the distance between the electrode and the counter-electrode is fixedly specified
- the distance between the substrate carrier, on which the substrate is held, and the electrode can be altered.
- the coating process can be adjusted to different conditions. Altered conditions can be taken into account during numerous coating cycles and coating processes that deviate over time can be stabilized by adapting the distance between the electrode and the counter-electrode.
- the vacuum coating apparatus operates preferably in batch mode. It may be for instance a PECVD method or a CVD method.
- a lifting device by means of which the substrate carrier is movable.
- the electrode vertically adjustable in the case of adjustment of the substrate carrier by means of a lifting device, an advantageous embodiment is achieved in particular when the vacuum coating apparatus is configured with two planes arranged one above the other, between which the substrate carrier can in any case be moved by a lifting device, in order in this way to be able to achieve better throughput in a batch installation.
- the upper plane is used for coating
- the lower plane serves as a buffer for fully coated substrates and allows increased throughput in conjunction with a suitable handling device.
- the distance between the electrode and the substrate carrier is automatically adjustable, preferably settable by means of a controller depending on at least one coating parameter.
- the object of the invention is also achieved by a method for vacuum coating a substrate with application of a voltage between an electrode located opposite the substrate and a counter-electrode, with a feed of process gas into the coating chamber, wherein a distance between the electrode and the counter-electrode is set, preferably automatically controlled depending on at least one process parameter.
- a method for vacuum coating a substrate with application of a voltage between an electrode located opposite the substrate and a counter-electrode, with a feed of process gas into the coating chamber, wherein a distance between the electrode and the counter-electrode is set, preferably automatically controlled depending on at least one process parameter.
- the process gas is fed here via a multiplicity of gas outlet openings in the electrode and is directed by at least one flow guiding element in the direction of the substrate, suction extraction preferably taking place in the bottom region of the coating chamber.
- the object is achieved in the case of a vacuum coating apparatus of the type mentioned at the beginning in that at least one flow guiding element extends between the electrode and the substrate carrier.
- the process gases fed from above can be directed particularly uniformly in the direction of the substrate. A lateral escape of the process gases, before they have passed over the substrate surface, is prevented or minimized in this way.
- the flow guiding element is in the form of a frame which extends from the electrode in the direction of the substrate carrier.
- the at least one gas outlet opening is preferably arranged within a chamber enclosed by the flow guiding element.
- a plurality of gas outlet openings are provided in the electrode.
- the flow guiding element is arranged and dimensioned such that a gap of at most 20 mm, preferably of at most 10 mm, further preferably of at most 6 mm remains between the substrate carrier and the flow guiding element.
- the flow guiding element is arranged and dimensioned such that a gap of about 2 to 20 mm, preferably of about 2 to 7 mm, particularly preferably of about 2 to 5 mm remains between the substrate carrier and the flow guiding element.
- the remaining gap can be set in the specified range of between 2 and 20 mm such that optimized implementation of the process can be achieved.
- the substrate carrier is held on a plate, preferably on a graphite plate, which is connected as the counter- electrode.
- the substrate carrier is itself normally connected as the counter-electrode, in this way homogenization of the electrical field between the substrate and the electrode is achieved on account of the use of the plate. It is not the substrate itself that acts as the counter-electrode but rather the plate, which is preferably configured as a graphite plate. In this way, the substrate is enclosed in a more homogeneous field between the plate, which has been shifted further downwards, and the electrode. Particular advantages arise when the plate is configured as a graphite plate, since graphite is a particularly good heat conductor, and this contributes to a uniform temperature distribution.
- the plate, or the graphite plate is heated.
- the plate is embodied as a graphite plate.
- the plate, on which the substrate carrier is held can be heated throughout.
- a much more uniform temperature is ensured.
- rapid homogenization of the temperature at the substrate is achieved in this way on account of the graphite plate which is heated throughout.
- Figure 1 shows a cross section through a vacuum coating apparatus according to the invention in a highly simplified, schematic illustration
- Figures 2a) to 2c) show a schematic illustration of a vacuum coating installation having three coating cells, one service cell and one loading cell, which are arranged in a pentagonal manner around a central distribution cell, wherein different types of use are illustrated in a) to c).
- a vacuum coating apparatus according to the invention is designated overall by reference numeral 10.
- the vacuum coating apparatus 10 has a coating chamber 12, which is surrounded in an air-tight manner by a bottom 16, walls 18 and a top 14.
- the coating chamber 12 has an upper plane 38 and a lower plane 40 under the latter.
- a substrate carrier 28 can be held both in the upper plane 38 and in the lower plane 40.
- the substrate carrier 28 can be introduced into the upper plane 38 and extracted from the latter via an associated door 48 in the wall 18 by means of a handling device 52.
- associated rollers 36 For holding in the upper plane, use is made here of associated rollers 36, which can be actuated from outside the coating chamber 12 by means of vacuum bushings and which can be lowered in the wall 18 by axial movement.
- transport rollers 46 which serve to hold a substrate carrier 28, which can in turn, with the door 50 open, be introduced into and extracted from the lower plane 40 of the coating chamber 12 by means of an associated handling device 54.
- a substrate carrier 28 located in the coating chamber 12 rests, with the transport rollers 36 retracted into the wall 18, on a plate 32 which consists preferably of graphite and can be moved in the vertical direction with the aid of a lifting device 42.
- the lifting device 42 comprises a lifting drive 64, it being possible for this to be, for example, an electric cylinder, with the aid of which a piston can be displaced in a controlled manner in the vertical direction.
- the plate 32 consisting of graphite is heatable, for which purpose a plurality of heating elements 34, for example resistance heating elements, are provided on its underside, the heating elements 34 being arranged in manner distributed uniformly over the entire undersurface of the plate 32.
- a planar substrate 30 is held on the substrate carrier 28, which planar substrate 30 can be coated in the coating apparatus 10.
- the plate 32 is connected as a counter-electrode.
- an associated flat electrode 24 is arranged at a distance d from the substrate carrier 28.
- a multiplicity of gas outlet openings 26 pass through the electrode 24, said gas outlet openings 26 extending in a manner distributed in the form of a grid over the entire surface of the electrode 24.
- the gas outlet openings 26 serve to feed process gas for a vacuum coating process, it being possible for said process gas to be fed from outside the coating chamber 12 via a connected gas feed 22.
- a voltage is applied (not illustrated), it being possible for this to be an RF voltage if a PECVD process under vacuum is intended to be carried out in the coating chamber.
- a flow guiding element 70 is provided. This is a circumferentially closed frame which is fastened to the underside of the electrode 24 and extends downwards to just above the substrate carrier 28.
- a gap s which is preferably in the range of about 2 to 20 mm, in particular 2 to 5 mm, and is preferably variable with the aid of the lifting device 42 depending on at least one process parameter.
- the lifting device 42 is controlled via a central controller 60, as is indicated via a control line 66.
- a sensor 62 is illustrated purely schematically in the coating chamber 12, the sensor 62 being coupled to the central controller 60 via a line 68. This can be, for example, a temperature sensor, a pressure sensor, a sensor for sensing a particular gas partial pressure, etc.
- the senor 28 is merely indicated in a purely schematic manner and can be configured as any desired sensor, and that it is possible to provide a number of different sensors which are connected to the controller 60.
- the distance d between the substrate carrier 28 and the electrode 24 or the gap s between the lower end of the flow guiding element or frame 70 and the substrate carrier 28 can be set in dependence on one of the process parameters with the aid of the controller 60, in order to ensure optimized implementation of the process.
- the coating chamber 12 can be evacuated with the aid of a vacuum pump 20.
- the vacuum pump 20 has a multiplicity of suction openings 21 , which are preferably arranged in a uniformly distributed manner in the bottom region of the coating chamber 12.
- the graphite plate 32 which is connected as the counter-electrode, serves to homogenize the electrical field, since it is easier to make contact with the graphite plate 32 than with the substrate carrier. Furthermore, graphite is a very good heat conductor, which ensures a uniform temperature distribution over the entire surface. A particularly uniform temperature distribution thus arises over the entire graphite plate 32 and thus also over the substrate carrier 28 and ultimately the substrate 30, and this leads to a correspondingly homogeneous coating result.
- the substrate carrier 28, having the substrate 30 located thereon can be moved into the lower plane 40 by means of the lifting device 42. With the doors 48 or 50 open, a new substrate carrier having a substrate to be coated can then be introduced by means of the handling device 52, as is indicated by the arrow 56. At the same time, the substrate carrier 28, having the fully coated substrate 30 located thereon, can be extracted from the lower plane 40, with the door 50 open, via the handling device 54, as is indicated by the arrow 58.
- the installation preferably operates in a cyclical manner in batch mode.
- FIG. 2 illustrates the basic structure of a vacuum coating installation which is designated overall by the number 80.
- the vacuum coating installation 80 according to Figure 2a) comprises three coating cells P1 , P2, P3 and an identically constructed service cell M, and also a loading cell 82, said cells being arranged on the outside around a distribution cell 84 which has the form of a regular pentagon.
- the coating cells P1 , P2, P3 and the maintenance cell M can each be coupled to the distribution cell 84 via an associated port or door.
- Each coating cell P1 , P2, P3 and the maintenance cell M is formed by a vacuum coating apparatus 10 in the above-described manner.
- the same coating process is carried out in all of the coating cells P1 , P2, P3.
- the capacity of the coating cells P1 , P2, P3 is designed such that three coating cells suffice to ensure the nominal throughput.
- the maintenance cell M has an identical structure to the coating cells P1 , P2, P3 and thus serves as reserve capacity. This means that the coating process operates at nominal throughput, while at the same time maintenance work, for example cleaning work and the like, can be carried out in one cell, in the maintenance cell M, without the nominal throughput being impaired.
- Figure 2b shows a different state of the vacuum coating installation 80', in which the cell P3 previously used as a coating cell in the process as per Figure 2a) is now used as the maintenance cell M, and in which the previous maintenance cell M is now operated as the coating cell P3 in the process.
- Figure 2c shows a further state of the vacuum coating installation 80", in which the cell previously used as the coating cell P2 as per Figure 2b), is now used as the maintenance cell M, while the previous maintenance cell is used as the coating cell P2.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011113294.9 | 2011-09-05 | ||
DE201110113294 DE102011113294A1 (de) | 2011-09-05 | 2011-09-05 | Vakuumbeschichtungsvorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013034404A1 true WO2013034404A1 (en) | 2013-03-14 |
Family
ID=46690503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2012/065865 WO2013034404A1 (en) | 2011-09-05 | 2012-08-14 | Vacuum coating apparatus |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102011113294A1 (pt-PT) |
TW (1) | TW201319298A (pt-PT) |
WO (1) | WO2013034404A1 (pt-PT) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103956315A (zh) * | 2014-05-22 | 2014-07-30 | 中国地质大学(北京) | 一种电极间距可调的离子反应腔室及电极间距调整装置 |
CN113957388A (zh) * | 2020-07-21 | 2022-01-21 | 宝山钢铁股份有限公司 | 一种采用导流板式结构均匀分配金属蒸汽的真空镀膜装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3052766B1 (fr) * | 2016-06-15 | 2018-07-13 | Thales | Reacteur de fabrication de nanostructures par depot chimique en phase vapeur |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0272140A2 (en) * | 1986-12-19 | 1988-06-22 | Applied Materials, Inc. | TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films. |
US5399387A (en) * | 1993-01-28 | 1995-03-21 | Applied Materials, Inc. | Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates |
US6189482B1 (en) * | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
US6444277B1 (en) * | 1993-01-28 | 2002-09-03 | Applied Materials, Inc. | Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates |
US6626186B1 (en) | 1998-04-20 | 2003-09-30 | Tokyo Electron Limited | Method for stabilizing the internal surface of a PECVD process chamber |
WO2005104206A1 (en) * | 2004-04-20 | 2005-11-03 | Applied Materials, Inc. | Method of controlling the uniformity of pecvd-deposited thin films |
US20070116872A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116888A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US20070264443A1 (en) * | 2006-05-09 | 2007-11-15 | Applied Materials, Inc. | Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits |
US20090022908A1 (en) * | 2007-07-19 | 2009-01-22 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition technology for large-size processing |
DE102008026000A1 (de) | 2008-05-29 | 2009-12-03 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Beschichtung flächiger Substrate |
WO2012054200A2 (en) * | 2010-10-20 | 2012-04-26 | Applied Materials, Inc. | Dual delivery chamber design |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6001183A (en) * | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
US7279049B2 (en) * | 2004-02-05 | 2007-10-09 | Applied Materials, Inc. | Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support |
US7740705B2 (en) * | 2006-03-08 | 2010-06-22 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
US20100044213A1 (en) * | 2008-08-25 | 2010-02-25 | Applied Materials, Inc. | Coating chamber with a moveable shield |
-
2011
- 2011-09-05 DE DE201110113294 patent/DE102011113294A1/de not_active Withdrawn
-
2012
- 2012-08-14 WO PCT/EP2012/065865 patent/WO2013034404A1/en active Application Filing
- 2012-08-22 TW TW101130429A patent/TW201319298A/zh unknown
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0272140A2 (en) * | 1986-12-19 | 1988-06-22 | Applied Materials, Inc. | TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films. |
US5399387A (en) * | 1993-01-28 | 1995-03-21 | Applied Materials, Inc. | Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates |
US6444277B1 (en) * | 1993-01-28 | 2002-09-03 | Applied Materials, Inc. | Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates |
US6189482B1 (en) * | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
US6626186B1 (en) | 1998-04-20 | 2003-09-30 | Tokyo Electron Limited | Method for stabilizing the internal surface of a PECVD process chamber |
WO2005104206A1 (en) * | 2004-04-20 | 2005-11-03 | Applied Materials, Inc. | Method of controlling the uniformity of pecvd-deposited thin films |
US20070116872A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116888A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US20070264443A1 (en) * | 2006-05-09 | 2007-11-15 | Applied Materials, Inc. | Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits |
US20090022908A1 (en) * | 2007-07-19 | 2009-01-22 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition technology for large-size processing |
DE102008026000A1 (de) | 2008-05-29 | 2009-12-03 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Beschichtung flächiger Substrate |
WO2012054200A2 (en) * | 2010-10-20 | 2012-04-26 | Applied Materials, Inc. | Dual delivery chamber design |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103956315A (zh) * | 2014-05-22 | 2014-07-30 | 中国地质大学(北京) | 一种电极间距可调的离子反应腔室及电极间距调整装置 |
CN113957388A (zh) * | 2020-07-21 | 2022-01-21 | 宝山钢铁股份有限公司 | 一种采用导流板式结构均匀分配金属蒸汽的真空镀膜装置 |
Also Published As
Publication number | Publication date |
---|---|
DE102011113294A1 (de) | 2013-03-07 |
TW201319298A (zh) | 2013-05-16 |
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