WO2013032424A1 - Circuit and method for reading a resistive switching device in an array - Google Patents
Circuit and method for reading a resistive switching device in an array Download PDFInfo
- Publication number
- WO2013032424A1 WO2013032424A1 PCT/US2011/049337 US2011049337W WO2013032424A1 WO 2013032424 A1 WO2013032424 A1 WO 2013032424A1 US 2011049337 W US2011049337 W US 2011049337W WO 2013032424 A1 WO2013032424 A1 WO 2013032424A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- preamplifier
- voltage
- current
- switching device
- setup
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Analogue/Digital Conversion (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/239,053 US9064568B2 (en) | 2011-08-26 | 2011-08-26 | Circuit and method for reading a resistive switching device in an array |
KR1020147006935A KR20140047732A (en) | 2011-08-26 | 2011-08-26 | Circuit and method for reading a resistive switching device in an array |
EP11871717.2A EP2748820A4 (en) | 2011-08-26 | 2011-08-26 | Circuit and method for reading a resistive switching device in an array |
PCT/US2011/049337 WO2013032424A1 (en) | 2011-08-26 | 2011-08-26 | Circuit and method for reading a resistive switching device in an array |
CN201180073670.0A CN103827972A (en) | 2011-08-26 | 2011-08-26 | Circuit and method for reading resistive switching device in array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2011/049337 WO2013032424A1 (en) | 2011-08-26 | 2011-08-26 | Circuit and method for reading a resistive switching device in an array |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013032424A1 true WO2013032424A1 (en) | 2013-03-07 |
Family
ID=47756663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2011/049337 WO2013032424A1 (en) | 2011-08-26 | 2011-08-26 | Circuit and method for reading a resistive switching device in an array |
Country Status (5)
Country | Link |
---|---|
US (1) | US9064568B2 (en) |
EP (1) | EP2748820A4 (en) |
KR (1) | KR20140047732A (en) |
CN (1) | CN103827972A (en) |
WO (1) | WO2013032424A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9934854B2 (en) * | 2014-11-14 | 2018-04-03 | Hewlett Packard Enterprise Development Lp | Memory controllers comparing a difference between measured voltages with a reference voltage difference |
WO2016085470A1 (en) * | 2014-11-25 | 2016-06-02 | Hewlett-Packard Development Company, L.P. | Bi-polar memristor |
US10318861B2 (en) * | 2015-06-17 | 2019-06-11 | International Business Machines Corporation | Artificial neuron apparatus |
US9880780B2 (en) * | 2015-11-30 | 2018-01-30 | Samsung Electronics Co., Ltd. | Enhanced multi-stream operations |
CN105741869B (en) * | 2016-01-22 | 2018-05-01 | 清华大学 | The test method and test equipment of resistance-change memory device |
CN105978625A (en) * | 2016-06-27 | 2016-09-28 | 佛山市南海区联合广东新光源产业创新中心 | Visible light communication device with resistor array |
CN106027145A (en) * | 2016-06-27 | 2016-10-12 | 佛山市南海区联合广东新光源产业创新中心 | Visible light communication switching and controlling method |
US10446232B2 (en) | 2017-12-19 | 2019-10-15 | Micron Technology, Inc. | Charge separation for memory sensing |
US11289146B2 (en) | 2019-08-27 | 2022-03-29 | Micron Technology, Inc. | Word line timing management |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001184856A (en) * | 1999-10-29 | 2001-07-06 | Hewlett Packard Co <Hp> | Circuit for sensing memory cell resistive state |
US20040240276A1 (en) * | 2003-06-02 | 2004-12-02 | Frederick Perner | Magnetic memory cell sensing with first and second currents |
US20050169034A1 (en) * | 2004-02-03 | 2005-08-04 | Perner Fredrick A. | Remote sensed pre-amplifier for cross-point arrays |
US20050195647A1 (en) | 2004-03-04 | 2005-09-08 | Perner Frederick A. | 1R1D MRAM block architecture |
US20100118588A1 (en) * | 2008-11-12 | 2010-05-13 | Seagate Technology Llc | Voltage reference generation for resistive sense memory cells |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6259644B1 (en) * | 1997-11-20 | 2001-07-10 | Hewlett-Packard Co | Equipotential sense methods for resistive cross point memory cell arrays |
US6185143B1 (en) * | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
US6574129B1 (en) | 2002-04-30 | 2003-06-03 | Hewlett-Packard Development Company, L.P. | Resistive cross point memory cell arrays having a cross-couple latch sense amplifier |
EP1484764B1 (en) | 2003-06-04 | 2006-08-16 | STMicroelectronics S.r.l. | Method for generating a reference current for sense amplifiers connected to cells of a memory matrix, particularly in big-sized flash memories, and corresponding generator |
KR100735750B1 (en) | 2005-12-15 | 2007-07-06 | 삼성전자주식회사 | Semiconductor devices including a reference cell block and sense amplification units for generating a plurality of uniform reference data and systems employing the same |
US7518934B2 (en) | 2007-03-23 | 2009-04-14 | Intel Corporation | Phase change memory with program/verify function |
GB2452567A (en) * | 2007-09-10 | 2009-03-11 | Texas Instruments Ltd | A track and hold circuit using output transistor capacitance as the hold capacitor |
US7813166B2 (en) | 2008-06-30 | 2010-10-12 | Qualcomm Incorporated | Controlled value reference signal of resistance based memory circuit |
JP5229742B2 (en) | 2009-12-24 | 2013-07-03 | 株式会社東芝 | Semiconductor memory device |
US8942026B2 (en) * | 2010-11-19 | 2015-01-27 | Hewlett-Packard Development Company, L.P. | Circuit and method for reading a resistive switching device in an array |
-
2011
- 2011-08-26 WO PCT/US2011/049337 patent/WO2013032424A1/en active Application Filing
- 2011-08-26 US US14/239,053 patent/US9064568B2/en active Active
- 2011-08-26 EP EP11871717.2A patent/EP2748820A4/en not_active Withdrawn
- 2011-08-26 KR KR1020147006935A patent/KR20140047732A/en active IP Right Grant
- 2011-08-26 CN CN201180073670.0A patent/CN103827972A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001184856A (en) * | 1999-10-29 | 2001-07-06 | Hewlett Packard Co <Hp> | Circuit for sensing memory cell resistive state |
US20040240276A1 (en) * | 2003-06-02 | 2004-12-02 | Frederick Perner | Magnetic memory cell sensing with first and second currents |
US20050169034A1 (en) * | 2004-02-03 | 2005-08-04 | Perner Fredrick A. | Remote sensed pre-amplifier for cross-point arrays |
US20050195647A1 (en) | 2004-03-04 | 2005-09-08 | Perner Frederick A. | 1R1D MRAM block architecture |
US20100118588A1 (en) * | 2008-11-12 | 2010-05-13 | Seagate Technology Llc | Voltage reference generation for resistive sense memory cells |
Non-Patent Citations (1)
Title |
---|
See also references of EP2748820A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP2748820A4 (en) | 2014-12-24 |
EP2748820A1 (en) | 2014-07-02 |
US9064568B2 (en) | 2015-06-23 |
CN103827972A (en) | 2014-05-28 |
US20140198559A1 (en) | 2014-07-17 |
KR20140047732A (en) | 2014-04-22 |
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