WO2012171230A1 - 用于LED背光驱动电路的Boost升压电路 - Google Patents

用于LED背光驱动电路的Boost升压电路 Download PDF

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WO2012171230A1
WO2012171230A1 PCT/CN2011/076174 CN2011076174W WO2012171230A1 WO 2012171230 A1 WO2012171230 A1 WO 2012171230A1 CN 2011076174 W CN2011076174 W CN 2011076174W WO 2012171230 A1 WO2012171230 A1 WO 2012171230A1
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boost
circuit
component
resistor
pulse width
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French (fr)
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高新明
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/203,979 priority Critical patent/US8692476B2/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/37—Converter circuits
    • H05B45/3725—Switched mode power supply [SMPS]
    • H05B45/38—Switched mode power supply [SMPS] using boost topology
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

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  • the utility model relates to a boost boost circuit, and in particular to a boost boost circuit for an LED backlight drive circuit.
  • FIG. 1 is a schematic diagram of a LED backlight driving circuit in the prior art, in which only the driven LED is represented by a load, and the load may be multiple. LEDs connected in series, or multiple LEDs connected in series are connected in parallel.
  • the first capacitor C1, the inductor L, the first switch transistor Q1, the diode D, the first resistor R1 and the second capacitor constitute a peripheral power component of the Boost boost circuit, and a pulse width modulation chip (PWM) IC)
  • PWM pulse width modulation chip
  • the output of the UC3843 pin 6 is connected to the gate of the first switching transistor Q1.
  • the pulse width modulation chip UC3843 controls the above peripheral power components through the output terminal, so that the Boost boost circuit provides a high output voltage for the load.
  • First switch tube Q1, second switch tube Q2 and the third switching transistor Q3 are MOSFETs, and the withstand voltage of the gate-source terminal GS is generally plus or minus 20V.
  • the existing Boost boost circuit also needs to add a voltage regulator 101 for supplying the voltage of the first switch tube Q1 and the power supply voltage of the pulse width modulation chip UC3843.
  • Existing regulators can be divided into linear regulators and switching regulators. However, if a linear regulator is used, there is a disadvantage of high power consumption and a large heat dissipation area. If a switching regulator is chosen, it is more efficient than a linear regulator switching power supply, but it is expensive.
  • an object of the present invention is to provide a Boost boosting circuit for an LED backlight driving circuit, which can eliminate the voltage regulator and solve the above problems.
  • an object of the present invention is to provide a Boost boosting circuit for an LED backlight driving circuit, which can eliminate the voltage regulator and solve the above problems.
  • a Boost boosting circuit for an LED backlight driving circuit has an input end, an output end, and a plurality of peripheral power components, wherein the plurality of peripheral power components have an inductance and a first
  • the diode, the switching transistor and the first capacitor are characterized in that the Boost boosting circuit further comprises: a pulse width modulation chip, a second capacitor and a signal processing circuit.
  • a power supply pin of the pulse width modulation chip is coupled to the input for generating a PWM signal.
  • One end of the second capacitor is connected to an output pin of the pulse width modulation chip for filtering a DC component of the PWM signal.
  • One end of the signal processing circuit is connected to the second capacitor, and the other end is connected to the gate of the switch tube, and the signal processing circuit is configured to adjust the PWM signal after filtering the DC component to generate a corresponding High level and low level.
  • the signal processing circuit includes a second diode, a first resistor, a transistor, and a second resistor, the second diode is connected in parallel to the first resistor and the triode, and the An anode of the diode is connected to the second capacitor, a cathode is connected to the collector of the second resistor and the transistor; a base of the transistor is connected to the first resistor, and an emitter is grounded; A second resistor is coupled to the gate of the switching transistor.
  • the triode is a PNP triode.
  • the pulse width modulation chip is a UC384X series, such as UC3843.
  • the high level of the PWM signal is an input voltage of the input terminal, the low level is zero, and the duty ratio is D. Furthermore, the DC component is the input voltage multiplied by D. Furthermore, the high level of the PWM signal after filtering the DC component is the input voltage minus the DC component, and the low level is the negative DC component.
  • the Boost boost circuit of the present invention directly connects an input voltage through a pulse width modulation chip, and filters a DC component through the second capacitor, and then performs a PWM signal after filtering the DC component. Simple handling to directly control the opening and closing of the switch.
  • the utility model lays off the existing voltage regulator and reduces the cost.
  • the Boost boost circuit of the present invention directly connects an input voltage through a pulse width modulation chip, and filters a DC component through the second capacitor, and then performs a PWM signal after filtering the DC component. Simple handling to directly control the opening and closing of the switch.
  • the utility model lays off the existing voltage regulator and reduces the cost.
  • FIG. 1 is a schematic diagram of an LED backlight driving circuit in the prior art.
  • FIG. 2 is a circuit diagram of a Boost boost circuit for an LED backlight driving circuit in accordance with a preferred embodiment of the present invention.
  • FIG. 3 is a waveform diagram of a PWM signal generated by a pulse width modulation chip according to a preferred embodiment of the present invention.
  • Figure 4 is a waveform diagram of the PWM signal after filtering out the DC component.
  • Figure 5 is a corresponding high level and low level waveform diagram generated by the signal processing circuit.
  • FIG. 2 is a circuit diagram of a Boost boost circuit for an LED backlight driving circuit according to a preferred embodiment of the present invention.
  • the Boost boost circuit 100 has an input terminal 102, an output terminal 104, and a plurality of And a peripheral power component, wherein the input terminal 102 has an input voltage Vi, and the output terminal 104 has an output voltage Vo.
  • the plurality of peripheral power components have an inductance L, a first diode D1, a switching transistor Q1, a resistor R, a first capacitor C1, and a third capacitor C3.
  • the plurality of peripheral power components are boost boost circuit components well known to those skilled in the art, and are not described herein.
  • the Boost boost circuit 100 of the preferred embodiment of the present invention further includes a pulse width modulation chip 120, a second capacitor C2, and a signal processing circuit 140.
  • the pulse width modulation chip is a UC384X series, such as UC3843.
  • the present invention is not limited to the chips of the above models.
  • UC3843 has 7 pins, pin 1 is COMP, pin 2 is VFB, pin 3 is ISNS, pin 4 is RT/CT, pin 5 (not shown) is grounded, pin 6 is output pin OUT, pin 7 is power supply pin VCC.
  • UC3843 data sheet which will not be repeated here.
  • the power supply pin VCC of the pulse width modulation chip 120 is connected to the input terminal Vi for generating a PWM signal.
  • FIG. 3 is a waveform diagram of a PWM signal generated by a pulse width modulation chip according to a preferred embodiment of the present invention.
  • FIG. 4 is a waveform diagram of the PWM signal after filtering the DC component.
  • One end of the second capacitor C2 is connected to an output pin OUT of the pulse width modulation chip 120 for filtering a DC component of the PWM signal 200.
  • the DC component is the input voltage Vi multiplied by D, i.e., Vi*D.
  • the high level of the PWM signal 220 after filtering the DC component is the input voltage Vi minus the DC component Vi*D
  • the DC component of the low level Toff is negative - Vi*D .
  • one end of the signal processing circuit 140 (shown by a broken line) is connected to the second capacitor C2, and the other end is connected to the gate of the switch tube Q1.
  • the signal processing circuit 140 is configured to adjust the PWM signal 220 after filtering the DC component to generate a corresponding high level and a low level to the switch tube Q1, so that the switch tube Q1 is turned on when the level is high. When the level is low, the switch tube Q1 is turned off.
  • the signal processing circuit 140 includes a second diode D2, a first resistor R1, a transistor Q2, and a second resistor R2.
  • the second diode D2 is connected in parallel to the first resistor R1 and the transistor Q2, and the anode of the second diode D2 is connected to the second capacitor C2, and the cathode is connected to the second resistor R2.
  • the base of the transistor Q2 is connected to the first resistor R1 and the emitter is grounded.
  • the second resistor R2 is connected to the gate of the switching transistor Q1.
  • the triode is a PNP triode.
  • FIG. 5 is a corresponding high-level and low-level waveform diagram generated by the signal processing circuit.
  • the PWM signal 220 after filtering the DC component is at a high level
  • the second diode D2 is turned on, and the PNP transistor Q2 is turned off (non-conducting). Therefore, the corresponding high level of Vi-Vi*D after passing through the second resistor R is Von, and Von is smaller than Vi-Vi*D.
  • the PWM signal 220 after filtering the DC component is at a low level
  • the second diode D2 is turned off (non-conducting), and the collector-emitter of the PNP transistor Q2 is turned on.
  • the gate of the switching transistor Q1 is grounded, that is, the corresponding low level generated is zero. According to the corresponding high level Von and low level 0, the switching transistor Q1 (MOSFET) with lower withstand voltage can be protected.
  • the present invention does not limit the signal processing circuit to be implemented by the above circuit, and other circuit forms can also be implemented.
  • the Boost boosting circuit 100 of the present invention directly connects the input voltage Vi through the pulse width modulation chip 120, filters out the DC component through the second capacitor C2, and then filters the DC component after filtering the DC component.
  • Signal 220 performs a simple process to directly control the opening and closing of the switch. Therefore, the utility model can eliminate the voltage regulator required by the existing Boost boost circuit and reduce the cost.

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Abstract

公开了一种用于LED背光驱动电路的Boost升压电路，其包括一脉宽调制（PWM）芯片（120）、一第二电容（C2）及一信号处理电路（140）。所述脉宽调制芯片（120）的供电脚连接至输入端（Vi），用于产生一PWM信号。所述第二电容（C2）的一端连接至所述脉宽调制芯片（120）的输出脚，用于滤除所述PWM信号的直流分量。所述信号处理电路（140）的一端连接于所述第二电容（C2），另一端连接于开关管（Q1）的闸极，所述信号处理电路（140）用于调整所述滤除直流分量后的PWM信号，以产生对应的高电平及低电平。

Description

用于LED背光驱动电路的Boost升压电路 技术领域
本实用新型是有关于一种Boost升压电路，且特别是有关于一种用于LED背光驱动电路的Boost升压电路。
 背景技术
LED具有使用寿命长、光效率高、节能的优点，因此逐渐被应用在液晶显示器的背光源之中。下述介绍现有技术中的LED背光的驱动电路，参见图1，图1为现有技术中的LED背光驱动电路示意图，图中仅以负载表示被驱动的LED，所述负载可为多个串联在一起的LED、或为多个串联的LED的并联在一起。
第一电容C1、电感L、第一开关管Q1、二极管D、第一电阻R1及第二电容组成Boost升压电路的外围功率元件，一脉宽调制芯片(PWM IC)UC3843的输出端（第6脚）连接至第一开关管Q1的闸极。脉宽调制芯片UC3843通过输出端来控制上述的外围功率元件，使得Boost升压电路为负载提供够高的输出电压。
第一开关管Q1、第二开关管 Q2及第三开关管Q3为MOSFET，其闸极-源极端GS的耐压一般为正负20V。为了不让上述开关管承受太大耐压，因此现有的Boost升压电路还需增设稳压器101，用以提供驱动第一开关管Q1的电压及脉宽调制芯片UC3843的供电电压。现有的稳压器可分为线性稳压器及开关稳压器。然而，如果选用线性稳压器，则会有功耗大且需要较大散热面积的缺点。如果选用开关稳压器，其比线性稳压器转换电源的效率更高，但成本昂贵。
 技术问题
有鉴于此，本实用新型的目的在于提供一种用于LED背光驱动电路的Boost升压电路，其可省去稳压器，解决了上述的问题。
 技术解决方案
有鉴于此，本实用新型的目的在于提供一种用于LED背光驱动电路的Boost升压电路，其可省去稳压器，解决了上述的问题。
为达上述的目的，本实用新型采取以下技术方案。一种用于LED背光驱动电路的Boost升压电路，所述Boost升压电路具有一输入端、一输出端、及若干个外围功率元件，所述若干个外围功率元件具有一电感、一第一二极管、一开关管及一第一电容，其特征在于，所述Boost升压电路还包括：一脉宽调制芯片、一第二电容及一信号处理电路。
所述脉宽调制芯片的供电脚连接至所述输入端，用于产生一PWM信号。所述第二电容的一端连接至所述脉宽调制芯片的输出脚，用于滤除所述PWM信号的直流分量。所述信号处理电路的一端连接于所述第二电容，另一端连接于所述开关管的闸极，所述信号处理电路用于调整所述滤除直流分量后的PWM信号，以产生对应的高电平及低电平。
优选地，所述信号处理电路包括一第二二极管、一第一电阻、一三极管及一第二电阻，所述第二二极管并联于所述第一电阻及三极管，且所述第二二极管的阳极连接至所述第二电容、阴极连接至所述第二电阻及所述三极管的集极；所述三极管的基极连接至所述第一电阻、射极接地；所述第二电阻连接至所述开关管的闸极。
优选地，所述三极管为一PNP三极管。
优选地，所述脉宽调制芯片为UC384X系列，例如为UC3843。
优选地，所述PWM信号之高电平为所述输入端的输入电压、低电平为零，且占空比为D。此外，所述直流分量为输入电压乘上D。更进一步地说，所述滤除直流分量后的PWM信号的高电平为输入电压减掉所述直流分量，其低电平为负的所述直流分量。
相较于现有技术，本实用新型的Boost升压电路通过脉宽调制芯片直接连接输入电压，并通过所述第二电容滤除直流分量，再对所述滤除直流分量后的PWM信号进行简单的处理，以直接控制开关管的启闭。本实用新型舍去现有的稳压器，降低了成本。
为让本实用新型的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
 有益效果
相较于现有技术，本实用新型的Boost升压电路通过脉宽调制芯片直接连接输入电压，并通过所述第二电容滤除直流分量，再对所述滤除直流分量后的PWM信号进行简单的处理，以直接控制开关管的启闭。本实用新型舍去现有的稳压器，降低了成本。
 附图说明
图1为现有技术中的LED背光驱动电路示意图。
图2为本实用新型较佳实施例的用于LED背光驱动电路的Boost升压电路的电路图。
图3为本较佳实施例的脉宽调制芯片产生的PWM信号波型图。
图4为滤除直流分量后的PWM信号的波型图。
图5为信号处理电路所产生的对应的高电平及低电平波型图。
 本发明的最佳实施方式
请参照图2，图2为本实用新型较佳实施例的用于LED背光驱动电路的Boost升压电路的电路图，所述Boost升压电路100具有一输入端102、一输出端104、及若干个外围功率元件，其中所述输入端102具有一输入电压Vi、所述输出端104具有一输出电压Vo。所述若干个外围功率元件具有电感L、第一二极管D1、开关管Q1、电阻R、第一电容C1、第三电容C3。所述若干个外围功率元件为本领域技术人员所熟知的boost升压电路元件，在此不在赘述。
本实用新型较佳实施例的Boost升压电路100还包括：一脉宽调制芯片120、一第二电容C2及一信号处理电路140。在此较佳实施例中，所述脉宽调制芯片为UC384X系列，例如为UC3843。然而本实用新型并不限于上述型号之芯片。UC3843具有7个脚，脚1为COMP、脚2为VFB、脚3为ISNS、脚4为RT/CT、脚5（图未示）为接地、脚6为输出脚OUT、脚7为供电脚VCC。上述每个脚的细节请叁考UC3843的数据手册，在此不再赘述。另外，为求图面清楚，仅画出输出脚OUT及供电脚VCC的连接方式。所述脉宽调制芯片120的供电脚VCC连接至所述输入端Vi，用于产生一PWM信号。
请参照图3，图3为本较佳实施例的脉宽调制芯片产生的PWM信号波型图。所述PWM信号200为一周期为T的方波，PWM信号200的高电平为所述输入端102的输入电压Vi、Toff低电平为0。此外，在高电平的期间为Ton、在低电平的期间为Toff，且高电平期间Ton所占周期T的比例为占空比D，即D＝Ton/T。
请再参照图2及图4，图4为滤除直流分量后的PWM信号的波型图。所述第二电容C2的一端连接至所述脉宽调制芯片120的输出脚OUT，用于滤除所述PWM信号200的直流分量。在此较佳实施例中，所述直流分量为输入电压Vi乘上D，即Vi*D。更进一步地说，所述滤除直流分量后的PWM信号220的高电平为输入电压Vi减掉所述直流分量Vi*D，其低电平Toff为负的所述直流分量-Vi*D。
请再参照图2，所述信号处理电路140（如虚线所示）的一端连接于所述第二电容C2，另一端连接于所述开关管Q1的闸极。所述信号处理电路140用于调整所述滤除直流分量后的PWM信号220，以产生对应的高电平及低电平给所述开关管Q1，使得在高电平时所述开关管Q1打开、在低电平时所述开关管Q1关闭。
在此较佳实施例中，所述信号处理电路140包括一第二二极管D2、一第一电阻R1、一三极管Q2及一第二电阻R2。所述第二二极管D2并联于所述第一电阻R1及三极管Q2，且所述第二二极管D2的阳极连接至所述第二电容C2、阴极连接至所述第二电阻R2及所述三极管Q2的集极。所述三极管Q2的基极连接至所述第一电阻R1、射极接地。所述第二电阻R2连接至所述开关管Q1的闸极。更进一步地说，所述三极管为一PNP三极管。
请一同参照图2及图5，图5为信号处理电路所产生的对应的高电平及低电平波型图。当所述滤除直流分量后的PWM信号220为高电平时，所述第二二极管D2导通，而所述PNP三极管Q2截止（不导通）。因此，Vi-Vi*D经过第二电阻R后所产生对应的高电平为Von，Von小于Vi-Vi*D。当所述滤除直流分量后的PWM信号220为低电平时，所述第二二极管D2截止（不导通），而所述PNP三极管Q2集-射极导通。因此，所述开关管Q1的闸极接地，即所产生对应的低电平为0。根据对应的高电平为Von及低电平0可保护耐压较低的开关管Q1(MOSFET)。然而，本实用新型并不限信号处理电路以上述电路实施，其他电路形式亦可实施。
参考前述工作原理，本实用新型的Boost升压电路100通过脉宽调制芯片120直接连接输入电压Vi，并通过所述第二电容C2滤除直流分量，再对所述滤除直流分量后的PWM信号220进行简单的处理，以直接控制开关管的启闭。因此，本实用新型可舍去现有的Boost升压电路所需的稳压器，降低了成本。
虽然本实用新型已用优选实施例揭露如上，然其并非用以限定本实用新型，本实用新型所属技术领域的技术人员，在不脱离本实用新型的精神和范围内，当可作各种的更动与润饰，因此本实用新型的保护范围当视后附的权利要求书所界定的为准。
 本发明的实施方式
工业实用性
序列表自由内容

Claims (15)

  1. 一种用于LED背光驱动电路的Boost升压电路，所述Boost升压电路具有一输入端、一输出端、及若干个外围功率元件，所述若干个外围功率元件具有一电感、一第一二极管、一开关管及一第一电容，其特征在于，所述Boost升压电路还包括：
    一脉宽调制芯片，所述脉宽调制芯片的供电脚连接至所述输入端，用于产生一PWM信号；
    一第二电容，一端连接至所述脉宽调制芯片的输出脚，用于滤除所述PWM信号的直流分量；以及
    一信号处理电路，一端连接于所述第二电容，另一端连接于所述开关管的闸极，所述信号处理电路用于调整所述滤除直流分量后的PWM信号，以产生对应的高电平及低电平至所述开关管的闸极，以直接控制述开开关管的启闭。
  2. 根据权利要求1所述的Boost升压电路，其特征在于：所述信号处理电路包括一第二二极管、一第一电阻、一三极管及一第二电阻，所述第二二极管并联于所述第一电阻及三极管，且所述第二二极管的阳极连接至所述第二电容、阴极连接至所述第二电阻及所述三极管的集极；所述三极管的基极连接至所述第一电阻、射极接地；所述第二电阻连接至所述开关管的闸极。
  3. 根据权利要求1所述的Boost级联升压电路，其特征在于，所述脉宽调制芯片为UC384X系列。
  4. 根据权利要求3所述的Boost升压电路，其特征在于，所述脉宽调制芯片为UC3843。
  5. 根据权利要求1所述的Boost升压电路，其特征在于，所述PWM信号之高电平为所述输入端的输入电压、低电平为零，且占空比为D。
  6. 根据权利要求5所述的Boost升压电路，其特征在于，所述直流分量为输入电压乘上D。
  7. 根据权利要求6所述的Boost升压电路，其特征在于，所述滤除直流分量后的PWM信号的高电平为输入电压减掉所述直流分量，其低电平为负的所述直流分量。
  8. 一种用于LED背光驱动电路的Boost升压电路，所述Boost升压电路具有一输入端、一输出端、及若干个外围功率元件，所述若干个外围功率元件具有一电感、一第一二极管、一开关管及一第一电容，其特征在于，所述Boost升压电路还包括：
    一脉宽调制芯片，所述脉宽调制芯片的供电脚连接至所述输入端，用于产生一PWM信号；
    一第二电容，一端连接至所述脉宽调制芯片的输出脚，用于滤除所述PWM信号的直流分量；以及
    一信号处理电路，一端连接于所述第二电容，另一端连接于所述开关管的闸极，所述信号处理电路用于调整所述滤除直流分量后的PWM信号，以产生对应的高电平及低电平。
  9. 根据权利要求8所述的Boost升压电路，其特征在于：所述信号处理电路包括一第二二极管、一第一电阻、一三极管及一第二电阻，所述第二二极管并联于所述第一电阻及三极管，且所述第二二极管的阳极连接至所述第二电容、阴极连接至所述第二电阻及所述三极管的集极；所述三极管的基极连接至所述第一电阻、射极接地；所述第二电阻连接至所述开关管的闸极。
  10. 根据权利要求9所述的Boost升压电路，其特征在于，所述三极管为一PNP三极管。
  11. 根据权利要求8所述的Boost级联升压电路，其特征在于，所述脉宽调制芯片为UC384X系列。
  12. 根据权利要求8所述的Boost升压电路，其特征在于，所述脉宽调制芯片为UC3843。
  13. 根据权利要求8所述的Boost升压电路，其特征在于，所述PWM信号之高电平为所述输入端的输入电压、低电平为零，且占空比为D。
  14. 根据权利要求13所述的Boost升压电路，其特征在于，所述直流分量为输入电压乘上D。
  15. 根据权利要求14所述的Boost升压电路，其特征在于，所述滤除直流分量后的PWM信号的高电平为输入电压减掉所述直流分量，其低电平为负的所述直流分量。
PCT/CN2011/076174 2011-06-16 2011-06-23 用于LED背光驱动电路的Boost升压电路 Ceased WO2012171230A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107196521A (zh) * 2017-07-19 2017-09-22 上海仁机仪器仪表有限公司 盖革米勒探测器用的低功耗高压电源模块

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102654989B (zh) * 2012-05-04 2014-06-11 深圳市华星光电技术有限公司 液晶显示器的背光模块驱动方法及其系统
CN103096595B (zh) * 2013-01-11 2014-11-05 深圳市华星光电技术有限公司 Led驱动电路
CN103474033B (zh) * 2013-08-09 2016-06-22 京东方科技集团股份有限公司 升压控制电路及其控制方法、升压电路、显示装置
CN106793337B (zh) * 2017-01-23 2019-08-06 深圳创维－Rgb电子有限公司 一种提升led背光源亮度的电路、方法、装置及控制器
CN109671413B (zh) * 2019-02-26 2020-11-13 合肥京东方显示技术有限公司 升压电路和关机电路及它们的驱动方法以及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2355816A (en) * 1999-10-26 2001-05-02 Mitel Corp Efficient controlled current sink for LED backlight panel
CN2445351Y (zh) * 2000-09-13 2001-08-29 钟玉麟 液晶显示器背光升压转换电路
KR20060089289A (ko) * 2005-02-03 2006-08-09 주식회사 현대오토넷 에스·엠·피·에스를 이용한 인젝터 구동회로
CN101820223A (zh) * 2010-04-28 2010-09-01 海洋王照明科技股份有限公司 一种电池升压电路、灯具控制电路及应急灯

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2355816A (en) * 1999-10-26 2001-05-02 Mitel Corp Efficient controlled current sink for LED backlight panel
CN2445351Y (zh) * 2000-09-13 2001-08-29 钟玉麟 液晶显示器背光升压转换电路
KR20060089289A (ko) * 2005-02-03 2006-08-09 주식회사 현대오토넷 에스·엠·피·에스를 이용한 인젝터 구동회로
CN101820223A (zh) * 2010-04-28 2010-09-01 海洋王照明科技股份有限公司 一种电池升压电路、灯具控制电路及应急灯

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107196521A (zh) * 2017-07-19 2017-09-22 上海仁机仪器仪表有限公司 盖革米勒探测器用的低功耗高压电源模块

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