WO2012164545A1 - Piégeage d'énergie à partir d'un engrenage rotatif à l'aide d'un appareil de piégeage mems piézoélectrique du type à impact - Google Patents

Piégeage d'énergie à partir d'un engrenage rotatif à l'aide d'un appareil de piégeage mems piézoélectrique du type à impact Download PDF

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Publication number
WO2012164545A1
WO2012164545A1 PCT/IB2012/052805 IB2012052805W WO2012164545A1 WO 2012164545 A1 WO2012164545 A1 WO 2012164545A1 IB 2012052805 W IB2012052805 W IB 2012052805W WO 2012164545 A1 WO2012164545 A1 WO 2012164545A1
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Prior art keywords
piezoelectric
gear
tip
cantilever
silicon
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PCT/IB2012/052805
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English (en)
Inventor
Don ISARAKORN
Pattanaphong JANPHUANG
Danick Briand
Nico De Rooij
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Ecole Polytechnique Federale De Lausanne (Epfl)
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Publication of WO2012164545A1 publication Critical patent/WO2012164545A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/304—Beam type
    • H10N30/306—Cantilevers

Definitions

  • the present invention concerns energy harvesting from an impact by using a piezoelectric MEMS scavenger.
  • useful electrical power is generated by the impact between a rotating object, for example a gear, and a MEMS piezoelectric transducer.
  • a rotating object for example a gear
  • MEMS piezoelectric transducer for example a MEMS piezoelectric transducer.
  • the design of the device structure is based on both analytical and FEM models for the estimation of induced voltage generated from a piezoelectric transducer.
  • Vibration energy harvesting is potentially interesting for powering low-power electronic devices and various types of sensors. It not only provides a regenerative energy source, but also offers an advantage for systems in which battery replacement is challenging (i.e. remote locations).
  • the development of energy harvesters to produce energy from vibrations has rapidly advanced during the past few years since motions and vibrations are the most ubiquitous ambient energy source available. Typical examples are industrial machines, vehicles, and the human body.
  • piezoelectric materials have received much attention due to its high conversion efficiency, its high power density, its miniaturization potential using simple structures, and its mass manufacturability [see reference 1].
  • the first example has not been used to harvest energy from a rotating object and the windmill concept does not scale to down to compact harvesting systems. Only very limited studies have been reported on the use of MEMS devices to harvest energy from mechanical impact [see reference 2].
  • a MEMS harvester based on the impact between a rotating object and a piezoelectric compliant structure.
  • the impact type piezoelectric harvester consisting of a piezoelectric layer (bulk and thin film), for example a 135 pm-thick PZT sheet, bonded on an AFM like cantilever beam (based on silicon and metallic substrates) was successfully fabricated.
  • the electrical characteristics of the harvester i.e. voltage, power and load
  • FEM finite elements method
  • the invention concerns a device for energy harvesting from an impact by using a piezoelectric MEMS scavenger comprising at least a gear with teeth driven by an inertial mass system and a piezoelectric transducer located next to the gear, wherein the piezoelectric transducer is coupled to the inertial mass system through a tip so that when the gear starts moving, the piezoelectric transducer is set into motion by the impact between the gear teeth and the tip of the transducer.
  • the transducer may be a cantilever structure.
  • the cantilever structure may be placed on a top side or a bottom side of the gear.
  • the cantilever may be a single element.
  • the cantilever may have several arms, each arm having a tip.
  • the cantilever has five arms.
  • the transducer is a piezoelectric membrane with at least one tip.
  • the membrane may comprise a plurality of tips and the membrane may be circular.
  • the piezoelectric transducer may comprise a silicon substrate with a silicon nitride film and a PZT layer covered with a nickel top and bottom layer each forming an electrode layer.
  • the invention also concerns a method for fabricating the piezoelectric transducer as defined herein, the method comprising at least the following steps: -) provision of a 100 mm in diameter and 390 ⁇ -thick silicon substrate;
  • the exposed silicon area is wet etched in a KOH solution to accomplish the silicon AFM like cantilever resulting in a silicon tip with a height of 240 pm;
  • An embodiment of the invention concerns an object comprising at least a device as defined herein.
  • the object may be a watch.
  • Figure 1A and 1 B illustrates a schematic diagram of the concept of harvesting energy from a rotating object
  • Figure 2A and 2B illustrates a schematic of cantilever based energy harvesters (2A unimorph, 2B bimorph);
  • Figure 3 illustrates the result of a FE; simulation for the induced voltage generated by PZT film;
  • Figures 4(a) to 4(e) illustrates the fabrication process of an impact type harvester
  • Figure 5 illustrates optical images of a PZT/Silicon cantilever and SEM image obtained from the silicon tip
  • Figure 6 illustrates a schematic diagram of an experimental setup for testing the impact type PZT MEMS harvester
  • Figure 7 illustrates an optical image of the harvester mounted on X, Y and Z stage over the gear box
  • Figure 8 illustrates a comparison between the analytically calculated, the simulated, and the experimentally measured open circuit voltage as a function of the tip's depth
  • Figure 9 illustrates an output voltage signal waveform for different resistive loads at a gearbox speed of 25 rpm and tip's depth of 100 ⁇ ;
  • Figure 10 illustrates a variation of the output power as a function of the resistive loads for different tip's depth
  • Figures 1 1A, 1 1 B, 12A, 12B, 13A, 13B, 14A, and 14B illustrate possible configurations of the device according to the present invention
  • Figure 15 illustrates operation modes of the piezoelectric transducers according to the invention.
  • Figure 16 illustrates the potential application to integrate an impact-type piezoelectric energy harvesting array with a commercially available mechanical watch mechanism.
  • Figures 1A and 1 B shows a schematic drawing of the concept for harvesting energy from a rotating object.
  • the system comprises basically a piezoelectric harvester 2 positioned beside ( Figure 1A) or above a gear 1 ( Figure 1 B) to be coupled to a rotating inertial mass in order to keep the system as compact as possible.
  • the piezoelectric harvester 2 is coupled to the gear 1 through a point 3 at the free end of the cantilever 2 (AFM like design).
  • the inertial mass system coupled to the gear was represented by an electric motor.
  • the piezoelectric harvester 2 is set into motion by the impact between the gear teeth 4 and the tip 3 of cantilever 2.
  • a silicon substrate served as a support layer 6 for the piezoelectric material 5 (see figure 2A) since silicon micromachining allows the easy fabrication of AFM like cantilever structure with a tip which allows a vertical integration.
  • the cantilever structure was chosen since it is the most compliant structure for a given input force and it can generate larger strain compared to bridge and diaphragm structures.
  • a unimorph (figure 2A) or bimorph (figure 2B) piezoelectric cantilever beam structure may be used with a piezo layer 5 on a support elastic layer 6, or two piezo layers 5, 5' on each side of the support layer 6 or even multiple piezo stacks.
  • the power generation from the strained piezoelectric layer(s) in cantilever structure can be analytically modeled using the bending beam theory of the piezoelectric bimorph reported in reference [10]. Since the configuration of the harvesting device considered here is the unimorph embodiment, its open circuit voltage is a half of the open circuit voltage obtained from the bimorph.
  • the open circuit voltage of the piezoelectric unimor h can be expressed by: where H: the total thickness of the beam, L: the length of the beam, ⁇ ⁇ displacement of the beam, h 3 i: the piezoelectric constant expressed as: where g 31 and g 33 : piezoelectric voltage constant, c x , c° 2 and c° : piezoelectric elastic stiffness coefficients.
  • the magnitude of h 3 i was calculated using the material specifications available for the piezoelectric ceramic PZT-5A4E from Piezo Systems, Inc.
  • the design of the impact type piezoelectric harvester was supported by FEM simulation in ANSYS 12.0 to determine the induced voltage generated by the deflection of the piezoelectric unimorph.
  • the harvester was comprised of a PZT film stacked on a silicon beam.
  • the geometry of the harvester is defined by three main parameters: the area of the beam, the thickness of the support layer and the thickness of the piezoelectric film.
  • a rectangular shape with a length of 5 mm and a width of 3 mm was chosen to maximize the size of the capacitor while maintaining a compact design since the potential power output is directly related to this parameter [see reference 1].
  • the piezoelectric layer 5 made of 135 pm-thick PZT-5A was first selected because bulk piezoelectric ceramics can provide greater electromechanical coupling, structural strength than deposited thin films [see reference 3].
  • the piezoelectric film 5 completely covers the silicon support layer 6. As demonstrated in reference 4, to maximize the electrical energy generated from the harvester the ratio of the thickness of the bender (t p / t c ) has to be close to 0.64 ( Figure 3A). Due to the thickness of the PZT film the silicon support layer thickness has been defined to be thinner than 150 pm to maintain a certain flexibility of the harvester.
  • the tip at the free end of a cantilever was neglected for simplification and therefore the force or displacement was directly loaded to the free end of cantilever in the direction of approach (z-direction).
  • the boundary conditions included displacement constraints in the clamped position of the cantilever to prevent the beam from moving away. Therefore the free end of cantilever was allowed to move only in z-direction.
  • the bottom surface of the PZT layer 5 was set as ground and top surface as floating. Variations in the tip depth, from 80 pm to 200 pm, were simulated by applying the corresponding displacement to the tip of the cantilever, from 10 pm to 54 pm, in the static analysis.
  • Figure 3B shows the generated voltage distributed along the PZT when strained by 54 pm of tip deflection.
  • the average voltage generated through the PZT film thickness is simulated by coupling the entire nodes at top surface together in ANSYS [see reference 8].
  • the process starts from a 100 mm in diameter and 390 pm-thick silicon substrate 7.
  • the shape of rectangular cantilevers 8 is first patterned from the top side by DRIE (see Fig. 4(a)).
  • a 150 nm-thick LPCVD silicon nitride film 9 is then deposited on both sides for electrical isolation and used as mask during the KOH etching of silicon (see Fig. 4(b)).
  • Backside openings 10 in the nitride are defined using UV lithography followed by RIE etching (see Fig. 4(c)).
  • the exposed silicon area is wet etched in a KOH solution to accomplish the silicon AFM like cantilever resulting in a silicon tip with a height of 240 pm (see Fig. 4(d)).
  • Fig. 5 shows one of the fabricated impact type PZT harvesters (Fig.5a) and SEM image obtained from the silicon tip 1 1 (Fig.5b).
  • a gearbox 20 with speed of 100 rpm comprising a mini DC motor and a gear 1 with eighteen teeth 4 was used as a rotating object to impact the harvester 2 according to the present invention.
  • the harvester was then mounted on a micrometric X, Y and Z stage 21 to precisely adjust the position of the tip 3 over and into the gearbox 20 and connected to an oscilloscope 22 to detect the output voltage from the impact type PZT harvester.
  • a laser Doppler vibrometer (LDV), Polytec OFV 502 fiber interferometer 23 driven by Polytec OFV 3000 vibrometer controller, is used to monitor the displacement of the harvesting device.
  • Fig. 7 is an image of the harvester of figure 6 mounted over the gearbox 20 (gear 1 with teeth 4).
  • the power generation from the impact type PZT harvester is observed by varying the depth of the tip 3 into the gearbox 4.
  • the measured results on the output voltage generated from the impact type PZT harvester and the displacements of the beam obtained as function of the tip's depth are given in table 1 below.
  • the results of the analytical model and FEM simulation were then compared to the measured electrical response of the impact type PZT harvester (see Figure 8). A good agreement between measurements, analytical and FEM simulation is achieved.
  • the voltage level depends on the design parameters and electrical load used in the circuit.
  • Figure 9 gives an example of the output voltage peaks measured with different tip depth.
  • the harvester was connected with various resistive loads and the generated current through the resistive loads for different tip depth was recorded by a multimeter (Agilent 3441 1A).
  • Figures 1 1 A, 1 1 B, 12A, 12B and 13A, 13B illustrate other possible configurations of the device according to the present invention all with the aim of minimizing the space or volume taken by the elements, in order to be usable in many technical fields.
  • One typical application is the watch industry. Of course, other fields may be envisaged.
  • figures 1 1A and 1 1 B illustrate configurations with cantilever above and/or below a horizontal gear.
  • Figure 1 1A corresponds to the basic one illustrated in figure 1 with a gear 1 comprising teeth 4, a cantilever 2 with a tip 3.
  • Figure 1 B illustrates a variant of the basic configuration which uses two cantilevers 2, 2' each with a tip 3, 3', each being placed on one side of the gear 1 . This allows a compact arrangement of multiple elements.
  • Figure 12A and 12B illustrate configurations with multi-cantilevers above and/or below a horizontal gear.
  • figure 12A illustrates an embodiment with five cantilevers 2-1 , 2-2, 2-3, 2-4 and 2-5, each with a tip 3-1 to 3-5.
  • These multi- cantilevers 2-1 to 2-5 are placed on one side of the gear 1 with teeth 4.
  • Figure 12B illustrates a variant of the embodiment of Figure 12A where multi- cantilevers 2-1 to 2-5 and 2-1 ' to 2-5' are placed on each side of the gear 1 each with tips 3-1 to 3-5 and 3-1 ' to 3-5'.
  • Figures 13A and 13B illustrate other embodiments with a membrane comprising tips on top and/or bottom of the gear.
  • FIG 13A there is a disk 25 with tips 25-1 , 25-2 and 25-3 which cooperate with the teeth 4 of the gear 1 according to the principles of the present invention.
  • the disk may comprise up to several tips depending on the number of the gear teeth in order to improve the harvesting efficiency.
  • Figure 13B illustrates the modification of Figure 13A by separating the membrane into several parts.
  • the electrical characteristics of this embodiment can be modified using the connection of the small membranes.
  • the membranes or multi-cantilevers
  • the membranes will be connected in series in order to increase the voltage generated from the harvester.
  • other configurations in parallel for example are possible in the frame of the present invention.
  • Figure 14A illustrates the in plane movement configuration.
  • the piezoelectric cantilever 2-6 with tip 3-6 will be bent in the same plane as the surface of the gear 1 instead of bending up and down.
  • Figure 14B illustrates a variant of the embodiment of figure 14A where multi- cantilevers 2-6, 2-7, 2-8 are used with tips 3-6 to 3-8 and placed on the gear 1 .
  • This embodiment is implemented to avoid the torsional movement of the beam 2-6 to 2-8 which could reduce the output power generated from the piezoelectric harvester due to the charge cancellation effect.
  • Piezoelectric operation modes see figure 15
  • many designs for piezoelectric MEMS devices utilized the polycrystalline PZT (bulk or films), which allow the operations in either d 3 i or d 33 modes.
  • the d 3 i mode transducers have a PZT layer 5 in between top 27 and bottom 28 electrodes, while the d 33 mode transducers dismiss the need of a bottom electrode 28 by utilizing interdigitated (IDT) electrodes 29 on the top of the PZT layer 5.
  • IDT interdigitated
  • the polarization direction is through the film's thickness and perpendicular to the plane of the film, but the generated displacement to be used or the applied stress to be detected is in plane of the film.
  • the use of PZT films that are polarized in the plane of the film instead of through the thickness enables the d 33 to be employed.
  • the d 33 piezoelectric coefficient is typically around twice the magnitude of the d 3 i piezoelectric coefficient in PZT [see reference 1 1]. Therefore, the use of d 33 mode could enhance the performance of the devices.
  • the piezoelectric materials can be integrated onto several substrates such as silicon, metal, and polymer or plastic. Using silicon micromachining, it allows us the easy fabrication of the MEMS structure. At present, there are several piezoelectric materials available. However, the materials of interest for application in MEMS device are mainly PZT (lead zirconate titanate), ZnO (zinc oxide), AIN (aluminium nitride), PMN-PT, and PVDF. Among these, PZT is commonly used in energy harvesting application because of its properties (high electro mechanical coupling and high piezoelectric coefficient) which is desirable in piezoelectric harvesters.
  • a piezoelectric (PZT) layer can be integrated onto silicon substrate in three forms: thin films with a thickness of less than 3 pm; thick films with a thickness ranging from several microns to 100 pm and bonded bulk piezoelectric sheets [see reference 12].
  • High-quality PZT thin films can be directly grown on silicon using several techniques such as sol-gel, sputtering, metalorganic chemical vapor deposition (MOCVD) and pulse laser deposition (PLD) [see reference 12-14].
  • MOCVD metalorganic chemical vapor deposition
  • PLD pulse laser deposition
  • the crystallization, orientation, and the interface between the film and the electrode of these films need to be optimized.
  • epitaxial PZT (epi-PZT) thin films on silicon substrates are receiving a lot of interest [see reference 15] since epitaxial films in general exhibit properties, including piezoelectric coefficient, polarization, and dielectric constant superior to polycrystalline films which are promising for the realization of high performance MEMS devices.
  • PZT thick films with a thickness in the range of 10-100pm have shown a larger piezoelectricity compared to deposited thin film which are suitable for micro-sensors and actuators.
  • thick PZT films are difficult to directly produce on silicon substrate using conventional thin film processing.
  • the sol-gel composite method developed [see reference 6] can produce PZT films up to 100 ⁇ thickness but film's density is low due to insufficient sintering leading to reduce dielectric constant and piezoelectric coefficient.
  • Screen-printing is another approach to produce the PZT film thicker than ⁇ ⁇ [see reference 17].
  • the screen printed thick PZT films are not well crystallized because the sintering must be done at temperature less than 950°C to avoid a reaction between the PZT and Si [see reference 16]. Consequently, the film cannot shrink densely and their piezoelectricity is lower compared to bulk PZT ceramic.
  • Bulk PZT ceramics provide greater electromechanical coupling, structural strength, charge capacity, piezoelectricity and dielectric constant than deposited piezoelectric thin films (a few ⁇ ), which are attractive in many MEMS applications including high force actuators, harsh environment sensors and micro power generators [see reference 18].
  • a key to enabling the fabrication of microdevices using bulk PZT ceramics is the bonding of the PZT to Si substrates.
  • the thickness of the intermediate adhesion layer should be less than several microns in order to obtain a good mechanical property.
  • the bonding temperature needs to be as low as possible to reduce the residual stress due to the difference in thermal expansion between PZT and Si [see reference 14].
  • Piezoelectric materials could be directly integrated on several substrates before or after its structuring depending on fabrication process, processing temperature and complexity of the structure.
  • the system could be a module with an inertial mass, a gear, a harvester that could be implemented in different systems and objects, wearable on the body of a user, on machine tools, in different moving objects etc, not moving in resonance, the movement of the system/object generating energy harvesting in accordance with the principle of the present invention.
  • the examples and embodiments, sizes and materials disclosed in the present application are of course only for illustrative purposes and should not be construed in a limiting fashion. Other variants using equivalent means are of course possible as well without imparting from the spirit a scope of the present invention.
  • different embodiments disclosed herein may be combined together if desired.

Abstract

La présente invention concerne un dispositif permettant de collecter de l'énergie provenant d'un impact par l'utilisation d'un système de collecte MEMS piézoélectrique comprenant au moins un engrenage (1) entraîné par un système à masse d'inertie et un transducteur piézoélectrique (2) situé sur l'engrenage dans le but de garder le système aussi compact que possible. Le transducteur piézoélectrique, tel qu'une structure en porte-à-faux, est accouplé au système à masse d'inertie au moyen d'une pointe (3) sur l'extrémité libre de l'élément en porte-à-faux de sorte que, lorsque l'engrenage tourne, l'élément en porte-à-faux piézoélectrique est animé par l'impact entre les dents de l'engrenage (4) et la pointe de l'élément en porte-à-faux. D'autre part, l'élément en porte-à-faux piézoélectrique peut être animé avec le blocage et le dégagement de la pointe à l'aide de l'engrenage. Dans ce cas, la forme de la pointe et de l'engrenage n'a pas besoin d'être optimisée. En outre, le revêtement sans frottement de la pointe avec SiC ou du diamant doit être pris en compte dans le but d'améliorer l'efficacité des systèmes.
PCT/IB2012/052805 2011-06-03 2012-06-04 Piégeage d'énergie à partir d'un engrenage rotatif à l'aide d'un appareil de piégeage mems piézoélectrique du type à impact WO2012164545A1 (fr)

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