WO2012164405A2

WO2012164405A2 - Introduction of an insulating buffer layer in multilayer with electro - optic layer

Info

Publication number: WO2012164405A2
Application number: PCT/IB2012/001514
Authority: WO
Inventors: 마리린 구이루-비리; 스테파니 데쀼띠에; 세바스찬 모루지옹; 박용화
Original assignee: 유니버시티 렌 1
Priority date: 2011-05-30
Filing date: 2012-05-30
Publication date: 2012-12-06
Also published as: KR20120133146A; KR101912718B1; WO2012164405A3

Abstract

The present invention provides an optical image shutter and a method of fabricating the same. An optical image shutter according to the present invention comprises: an electro-optical thin film layer whose refractive index changes according to an electric field; first and second electrodes separately arranged with the electro-optical thin film layer positioned therebetween; and an electric current prevention layer which is placed in at least one of the areas between the first electrode and the electro-optical thin film layer, and between the second electrode and the electro-optical thin film layer, and which prevents an electric current from flowing into the electro-optical thin film layer.

Description

【Specification】

[Name of invention]

Optical image shutter and its manufacturing method {Optical image shutter and method of fabricating the same}

Technical Field

Embodiments of the present invention relate to an optical image shutter and a method of manufacturing the same.

Background Art

^The optical shutter has a function of transmitting or blocking an optical image containing information according to a control signal. Optical shutters are optical models widely used in imaging devices such as cameras.

Recently, a technique for measuring distance information of a subject to obtain a 3D stereoscopic image by a camera has been studied. To measure the distance, use a LEDCLight Emitting Diode or UXLaser Diode to project light of a certain exaggeration (e.g., near infrared of 850) onto the subject, shutter the light image reflected from the subject, and then pass it through the image pickup device. Get the image. The distance information is then obtained through a series of processing on the acquired image. In this process, a fast shutter opening and closing time of several ns is required to accurately identify the light travel time according to the distance.

An optical shutter of the semiconductor substrate 10 has been proposed as an optical shutter capable of providing such a fast shutter opening and closing time. Since semiconductor-based optical shutters form electro-optical materials in thin films, they can function as optical shutters even at low voltages. Conductor-based optical shutter technology is being studied.

[Content of invention]

[Problem to solve]

The present disclosure provides an optical image shutter capable of reducing leakage current and a method of manufacturing the same.

[Technical Solution] An optical image shutter according to one type of the present invention includes: an all-optical thin film layer whose refractive index changes according to an electric field; First and second electrodes spaced apart from each other with the all-optical thin film layer interposed therebetween; And an anti-conduction layer disposed in at least one region between the first electrode and the all-optical thin film layer and between the second electrode and the all-optical thin film layer to prevent current from flowing into the all-optical thin film layer.

And, the all-optical thin film layer is KT _ai — _x Nb _x 0 ₃ (0 ≦ _x ≦ l) (KTN), LiNb0 ₃ (LN), Pb (Zr (V _x Ti _x ) 0 ₃ (0 <x <l) ( PZT) and DAST (4-dimethylamino-N-methy? 4 st i lbazol ium).

In addition, the current prevention layer may be formed of an insulating material.

In addition, the lattice constant of the insulating material may be similar to the lattice constant of the all-optical thin film worm.

In addition, the current prevention layer may be formed of at least one of Zr02, Ti02, MgO, SrTi03, A1203, Hf02, NbO, Si02 and Si3N4. And a buffer layer disposed under the first electrode. A substrate disposed under the buffer layer; And a reflective layer disposed on the second electrode. In addition, the substrate may be a crystalline substrate.

The substrate is formed of at least one of Si, GaAs, and Sapphire. The first electrode may be formed of a material including at least one of Pt, Cu, Ag, Ir, Ru, Al, Au.

In addition, a first reflective layer disposed under the first electrode; A substrate disposed under the first reflective layer; And a second reflector disposed on the second electrode.

The substrate may be a transparent amorphous substrate, and the first electrode may be formed of a transparent conductive oxide or a transparent oxide semiconductor.

In addition, the first electrode may be formed of SrTi0 ₃ or ZnO-based material. The reflectance of the second reflecting layer may be the same as the reflectance of the first reflecting layer. On the other hand, a method of manufacturing an optical image shutter according to one type of the present invention, forming a first electrode on the first reflective layer; Forming an all-optical thin film layer on which the refractive index changes according to an electric field on the first electrode; Forming a second electrode on the all-optical thin film layer; Forming a reflective layer on the second electrode; including, Inflow of current into the all-optical thin film layer in at least one step before and after forming the all-optical thin film layer Forming a conductive prevention layer to prevent the; may include. On the other hand, a method of manufacturing an optical image shutter according to another type of the present invention, forming a sacrificial layer on a crystalline substrate; Forming a first reflective layer on the sacrificial layer; Forming a first electrode on the first reflective layer; Forming an all-optical thin film layer on the first electrode, the refractive index of which is changed according to an electric field; Forming a second electrode on the all-optical thin film layer; Forming a second reflective layer on the second electrode; Bonding the second reflective layer onto the transparent substrate by flip-chip bonding; And removing the regenerative layer to separate the crystalline substrate on the first reflective layer, wherein at least one of before and after forming the all-optical thin film layer is introduced into the all-optical thin film layer. Forming an anti-conduction layer to prevent; further includes.

【Effects of the Invention】

In the optical image shutter according to the exemplary embodiment of the present disclosure, since the crystalline all-optical thin film layer may be formed at a low temperature by using a low-cost transparent substrate such as a glass substrate, a cost reduction and a yield improvement effect may be obtained.

In addition, since the all-optical crystal can be formed in the form of a thin film on the glass substrate, the optical image shutter can have a small thickness as a result.

In addition, since an anti-conduction layer is formed between the all-light thin film layer and the electrodes, the leakage current can be reduced.

In addition, since the anti-energization layer similar to the lattice constant of the all-optical thin film layer is used, it is possible to prevent cracking of the all-optical thin film layer and the anti-electric layer. Furthermore, the disclosed optical image shutters can be made large in area and can be utilized as shutters for cameras and shutters for flat displays.

[Brief Description of Drawings]

1 to 3 are cross-sectional views showing the structure of a transmissive optical image shutter according to an embodiment of the present invention.

4A to 4D illustrate a method of manufacturing a transmissive optical image shutter according to an embodiment of the present invention.

5 to 7 are cross-sectional views showing the structure of a reflective optical image shutter according to an embodiment of the present invention.

[Specific contents to carry out invention]

Hereinafter, an optical image shutter and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to the accompanying drawings. The width and thickness of the layers or regions shown in the accompanying drawings may be shown somewhat exaggerated for clarity. Throughout the description, like reference numerals refer to like elements.

With reference to the accompanying drawings will be described embodiments of the present invention;

1 to 3 are cross-sectional views showing the structure of the transmissive optical image shutters 100, 101, and 102 according to one embodiment of the present invention. 1 to 3, the transmissive light image shutters 100, 101, and 102 are disposed on the engine 10, the substrate 10 and reflect the light of a specific wavelength band 11. 16, crystalline all-optical thin film layer 14, all-optical thin film disposed between the first and second reflective layers 11 and 16, the refractive index of which varies with electric field First and second electrodes 12 and 15 disposed spaced apart between the first and second reflective layers 11 and 16 about the layer 14 to apply an electric field to the all-optical thin film layer 14, and then the first and second electrodes 12 and 15. An anti-conduction layer disposed between at least one of the electrode 12 and the all-light thin film layer 14 and between the second electrode 15 and the all-light thin film layer 14 to prevent current from flowing into the all-light thin film layer 14. (13, 17).

The substrate 10 may be made of a transparent amorphous material, for example, glass, so that light can be transmitted.

The first and second reflective layers 11 and 16 may be formed to have high reflectivity for light of a specific wavelength band by alternately stacking two or more kinds of transparent dielectric thin films having different refractive indices. In addition, instead of the dielectric thin film, a layer having simultaneous transmission and reflection characteristics of light, such as a thin metal, can be used as the first and second reflective layers 11 and 16. The first reflective layer 11 and the second reflective layer 16 may be formed of the same material and have the same structure. For example, the reflectances of the first and second reflective layers 11 and 16 may be the same, and each may be greater than or equal to 97%. Then, incident light resonates between the first reflective layer 11 and the second reflective layer 16 with the all-light thin film layer 14 in the center, and only light having a narrow wavelength band corresponding to the resonance mode may be transmitted. Therefore, the structure including the first reflective layer 11, the all-light thin film layer 14, and the second reflective layer 16 serves as a Fabry-Perot filter having controllable short wavelength transmission characteristics. The wavelength band of the transmitted light can be controlled according to the refractive index and the thickness of the all-light thin film layer 14. The light transmitted through the transmission type optical image shutters 100, 101, and 102 is, for example, an imaging device using a CCD or CMOS image sensor (Fig. Not shown).

The all-optical thin film layer 14 may be made of a material having an electro-optical effect in which the refraction changes according to the magnitude of the applied electric field. As a material of this all-optical thin film layer 14, for example, KTa ^ NbA ^^^ lKKTN), LiNb0 ₃ (LN), Pb (Zr0i-

Ji _x ) 0 ₃ (0 <x <l) (PZT) ₎ A crystal such as DAST (4-di me t hy 1 am i no-N-me t hy 1 -4 st i lbazol ium) can be used. It is important to control the crystallinity and directivity of the all-light thin film layer 14 in order to improve the all-light effect of the all-light thin film layer 14. For example, in the case of KTN, the all-optical thin film layer 14 may have a structure of a perovskite material having a lattice constant of a = 3.9 A for the all-optical effect.

The first and second electrodes 12 and 15 may be formed of the same material or different materials for applying an electric field to the all-optical thin film layer 14. E.g,

For example, the first electrode 12 may be a transparent metal oxide made of a material similar to the lattice constant of the all-optical thin film layer 14. Since the all-optical thin film layer 14, such as KTN, can be grown only on the already crystallized substrate 10, it becomes difficult to use an amorphous substrate such as glass, which can be mass-produced at low cost, as a substrate. In addition, even when using a crystallized substrate such as Si, GaAs, A1 ₂ 0 ₃ , MgO, SrTi0 _3, etc., the all-optical thin film layer 14 can be formed by a high silver process of about 70 C. However, such a high temperature process It is possible to cause a characteristic change such as a change in the refraction of the first reflective layer 11 and the second reflective layer 16 made of a dielectric thin film. Thus, before the formation of the all-optical thin film layer 14, the first electrode 12 is made of a crystalline material of transparent conductive oxide (TC0) that can be crystallized at a low temperature of 300 ^° C or lower regardless of the lattice constant of the underlying layer. ). The first electrode 12 may be adjusted to have a lattice constant similar to the lattice constant of the all-light thin film layer 14 to facilitate crystallization of the all-light thin film layer 14.

For example, the lattice constant of the first electrode 12 may be adjusted so that the lattice mismatch with the lattice constant of the all-optical thin film layer 14 is within 20% or within 10%. The material usable as this first electrode 12 may be SrTi¾. SrTi0 ₃ has the same perovskite structure as KTN, and the lattice constant is also similar to that of KTN.

On the other hand, the ZnO-based material, which is a transparent oxide semiconductor, also has a lattice constant of a = 3.3 A, similar to the lattice constant of KTN. ZnO can also be easily crystallized at low temperatures below 300 ^° C., regardless of the crystallinity of the substrate 10. In addition, ZnO can easily adjust the lattice constant by doping, and the electrical conductivity can be easily improved through doping. For example, ZnO may be doped with A1 or Ga to control the lattice constant and to improve the electrical conductivity. At this time, the doping concentration of A1 or Ga may be about 1 mol% <Al or Ga <5 mol%. Accordingly, ZnO based materials may also be used to form the first electrode 12.

In addition, three- or four-component ZnO having three or four compositions such as Al-In-Zn-0, In-Ga-Zn-0, Sn-Ga-Zn-0, Sn-Al-Zn-0, etc. The system material can be used as the first electrode 12. In this case, by changing the composition of Al, In, Ga, Sn, the first electrode 12 It is possible to adjust the lattice constants and electrical conductivity to the desired values. In addition, when the first electrode 12 is formed by the ZnO / Ag / ΖηΟ structure in which Ag, which is a metal having excellent electrical conductivity, is formed between the ZnO-based materials in the form of a thin film, the first electrode 12 is formed of a single ZnO. Conductivity can be further improved. When in this manner to form the first electrode 12 to form the ^next, before the optical thin film layer 14, a relatively low temperature may be formed of affection produced balls in (e. G., Up to about 30CTC), the electro-optic thin film layer (14) Crystallinity can also be improved.

The second electrode 15 may be formed of a general transparent metal oxide, for example, ITOGndium Tin Oxide, AZO (Alurainium Zinc Oxide), IZOQndium Zinc Oxide (SnO), Sn ((Tin oxide), or ln ₂ 0 ₃ . Of course, the second electrode 15 may also be formed of the same material as the material of the first electrode 12.

The energization preventing layers 13 and 17 prevent electrical conduction between at least one of the first and second electrodes 12 and 15 and the all-light thin film layer 14. The optical image shutters should measure the size of the imaging surface of the CCD or CMOS sensor. For this purpose, the aperture of the optical image shutter should have a size similar to that of the active area of the CCD or CMOS sensor, for example, a large aperture of about 1 cm diagonal. Deposition of the all-optical thin film layer 14 having such a large aperture on the first electrode 12 may result in defects on the all-optical thin film layer ₁₄ . Electrical conduction may be generated between the second electrode 12 positioned or the second electrode 15 positioned above and the all-light thin film layer 14. In addition, the electric current may generate a short to reach breakdown. All. Therefore, it is necessary to insert an energization prevention layer which prevents electricity supply between the all-light thin film layer 14 and an electrode.

The anti-current layers 13 and 17 may be formed of an insulating material including at least one of Zr0 ₂ , Ti0 ₂ , MgO, Ce0 ₂ , A1 ₂ 0 ₃ , Hf0 ₂ , NbO, Si¾, and Si ₃ N ₄ . In addition, the type of the insulating material of the anti-conduction layer 13 and 17 may vary depending on the material properties of the all-light thin film layer 14. For example, the energization prevention layers 13 and 17 may use an insulation material similar to the lattice constant of the all-light thin film layer 14. Thus, when KTN is used as the all-optical thin film layer 14, MgO having a lattice constant similar to the lattice constant of KTN can be used as the anti-energization layers 13 and 17. When the lattice constant of KTN is a = 3.3A, MgO having a lattice constant of a = 4.2A can be used as the current prevention layer (13, 17).

The anti-energization layers 13 and 17 may be disposed between the first electrode 12 and the all-optical thin film layer 14 as shown in FIG. 1, and the all-optical thin film layer 14 and the low) as shown in FIG. 2. It may be disposed between the two electrodes (15). In addition, it may be disposed between the first electrode 12 and the all-light thin film layer 14 and between the all-light thin film layer 14 and the second electrode 15 as shown in FIG. 3.

On the other hand, when the all-optical thin film layer 14 is composed of KTN, it is more effective to use MgO than Si¾ as the current prevention layer 13 and 17: because the crystal constants of MgO and KTN are similar, so that the same substrate ( 10) dense crystal thin film deposition is possible. Table 1 below shows Si¾, MgO and all-optical thin films available as the anti-energization layers 13 and 17. Table showing the physical characteristics of KTN available as layer 14.

Table 1

As shown in Table 1, since Si0 ₂ and MgO have an energy bandgap of 7 eV or more, insulation is excellent. In addition, MgO has an effect of increasing the applied electric field of KTN by more than two times, because the dielectric constant is about twice that of Si0 ₂ . In addition, the coefficient of thermal expansion of MgO is closer to KTN than that of Si¾, and the stress due to the change in silver that can occur during the process is relatively smaller than that of Si0 ₂ . Thus, when MgO is used as the current preventing layer 13, 17, cracking of the MgO or KTN layer can be prevented. In addition, if the diffusion of MgO occurs in KTN, the diffuser may cause a doping effect that contributes to the reduction of the dielectric loss. Therefore, there is an effect that the leakage current (leakage current) is reduced.

On the other hand, the operation principle of the optical image shutter is as follows. The center wavelength of the optical image shutter is determined according to the refractive index and thickness of the all-light thin film layer 14 as shown in Equation 1 below. [Equation 1]

Where ra is a positive integer and n and d are the refractive index and thickness of the all-optical thin film layer 14, respectively. On the other hand, the electro-optical effect refers to the effect of changing the refraction of the electro-thin film layer 14 when the electric field is applied to the electro-thin film layer 14, there are the Pockel effect (Kockel effect) and Kerr effect (Kerr effect). In consideration of the Kerr effect, the refractive index change η 'may be expressed as a function of the voltage difference V applied to the first and second electrodes 12 and 15 as shown in Equation 2. [Equation 2]

Where ¹² is the Kerr efficient of the all-optical thin film layer 14, and is KTN.

^ ₁₂ = -0.0018 _μ? ^ ² / V ²

Wu is the coefficient. In other words, when a voltage is applied to the first and second electrodes 12 and 15 disposed below and above the all-optical thin film charger 14, the refractive index of the all-optical thin film layer 14 is changed by the all-optical effect and accordingly, is defined by Equation 1 The increasing wavelength of the optical image shutter is changed as shown in Equation 3 below. [Equation 3]

_' m _' ,

c = -— ^η a

c 2 Therefore, the light transmission characteristics of the optical image shutter can be changed by adjusting the voltage difference applied to the first and second electrodes 12 and 15. For example, if light having a center wavelength of about 850 nm can pass through the optical image shutter before the electric field is applied to the all-optical thin film layer 14, when a voltage of 20 V is applied to the upper and lower portions of the all-optical thin film battery 14, An electric field is generated in the all-optical thin film layer 14, thereby changing the refraction. Then, the light having an exaggeration of about 870 nm may pass through the optical image shutter while the transmission characteristic of the optical image shutter is changed. Here, 850 nm and 870 nm, which are transmitted wavelengths, are merely exemplary, and the transmission exaggeration can be adjusted according to the refractive index and thickness of the all-optical thin film layer 14 and the design of the first and second reflective layers. The light transmission characteristics before and after the electric field is applied to the all-optical thin film layer 14 are changed, so that the optical image shutter may serve as a shutter for electrically controlling light having a specific wavelength band.

Deposition of each layer included in the transmissive optical image shutters 100, 101, and 102 may use chemical vapor deposition, sputtering, or PLEKPulsed Laser Deposion. However, when the glass substrate 10 is used for the transmissive optical image shutters 100, 101, and 102, the glass substrate 10 is an amorphous substrate while the first reflective layer is a crystalline material. Crystallization to (10) may be difficult. In such a case, the first reflective layer, the first electrode 12, the current prevention layer 13, 17, the all-light thin film layer 14, After sequentially forming the second electrode 15 and the second reflective layer, a portion of the formed transmissive light micro shutter is bonded to a transparent substrate 10 such as glass by flip-chip bonding. It is also possible. 4A-4D illustrate a method of manufacturing an optical image shutter in this manner.

First, referring to FIG. 4A, a regenerative layer 21, a second reflective layer 16, and a second electrode 15 are sequentially formed on a crystalline substrate 20 such as Si or GaAs. Since the crystalline substrate 20 will be removed later, it is not necessary to be transparent, but only a material having excellent crystallinity. Then, the second reflective layer 16 and the second electrode 15 are applied as described above. Then, on the second electrode 15, the all-optical thin film layer 14, the energization preventing layer 13, and the first electrode ( 12) and the first reflective layer 11 can be formed continuously. Here, the all-optical thin film layer 14 may be formed to a thickness of, for example, ¾m or less.

Referring next to FIG. 4B, the first reflective layer 11 is bonded onto a transparent substrate 10 such as glass, for example using a flip-chip bonding technique, and a regenerative layer (as shown in FIG. 4C). If 21 is removed, the crystalline substrate 20 is separated from the first reflective layer 11. Then, the transmissive optical image shutter 100 having the structure as shown in FIG. 4D may be finally formed.

In the case of the transmission type optical image shutter 100 shown in FIG. 4D, an anti-conduction layer 13 is formed between the all-light thin film layer ₁₄ and the first electrode 12, but the all-light thin film dancing 14 and the second electrode are provided. An energization preventing layer 17 may be formed between the layers 15. In addition, energization is performed between the all-optical thin film layer 14 and the first electrode 12 and between the all-optical thin film charge 14 and the second electrode 15. Protective layers 13 and 17 may be formed. -

. So far has been described for a transmission-type optical image shutter (100, 101, 102), and to also possible to configure the reflective optical image shutter with the same structure as that described in the above ^{^"," "Figure} 5 is one embodiment of the present invention Is a cross-sectional view showing the structure of the reflective optical image shutters 300, 301, and 302. Referring to Fig. 5, the reflective optical image shutter 300 includes a substrate 30, a buffer layer disposed on the substrate 30 ( 31, the first electrode 32 disposed on the buffer layer 31, the anti-conduction layers 33 and 37 disposed on the first electrode 32, and the all-light thin film layer 34 disposed on the anti-conduction layers 33 and 37. ), A second electrode 35 disposed on the all-optical thin film layer 34, and a reflective layer 36 disposed on the second electrode 35.

Since the reflective optical image shutter 300 shown in FIG. 5 is reflective, it is not necessary to use a transparent substrate. For example, the reflective optical image shutter 300 may use a crystalline substrate 30 such as Si or GaAs.

The buffer layer 31 is a layer for crystallizing the first electrode 32 on the substrate 31 and has a thermal expansion coefficient between the thermal expansion coefficient of the first electrode 32 and the thermal expansion coefficient of the substrate 30. It can be formed of a material. For example, the buffer layer 31 may be formed of at least one or more of oxides such as Si¾, P ₂ O ₅ , Ti0 ₂ , Li ₂ O, BaO, and the like.

In addition, in the case of the reflective optical image shutter 200, the first electrode 31 may be an opaque material in order to operate in the reflective type. And, the first electrode 32 has a high electrical conductivity It may be a metal material including at least one of Pt, Cu, kg, Ir, Ru, Al, and Au having a reflectance. The reflectance of the first electrode 32 may be, for example, about 90% or more.

The anti-current layer 33 may be formed of an insulating material including at least one of Zr0 ₂ , Ti0 ₂₎ MgO, Ce0 ₂₎ A1 ₂ 0 ₃ , Hf0 ₂₎ NbO, Si0 ₂ , and Si ₃ N ₄ . In addition, the kind of the insulating material of the current prevention layer 33 may vary depending on the material properties of the all-light thin film layer 34. For example, the current prevention layer 33 may use an insulating material similar to the lattice constant of the all-light thin film layer 34. Thus, when KTN is used as the all-optical thin film layer 34, MgO having a lattice constant similar to the lattice constant of KTN can be used as the energization preventing layer 33. When the lattice constant of KTN is a = 3.3A, MgO having a lattice constant of a = 4.2 lA can be used as the current prevention layer 33.

The all-optical thin film layer 34 may be made of a material having an electro-optical effect in which the refractive index is changed according to the magnitude of the applied electric field. As the material of this all-optical thin film layer 34, for example, KTa _t — _x Nb _x 0 ₃ (0 <x <l) (KTN), LiNb0 ₃ (LN), Pb (Zr0i- _x Ti _x ) 0 Crystals such as ₃ (0 <x <l) (PZT) and DAST (4-dimethylamino-N-methyl-4 st lblbolium) may be used. It is important to control the crystallinity and directivity of the all-light thin film layer 34 in order to improve the all-light effect of the all-light thin film layer 34. For example, in the case of KTN, the all-optical thin film layer 34 may have a structure of a perovskite material having a lattice constant of a = 3.9 A for the all-optical effect.

The second electrode 35 is a common transparent metal oxide, for example ITO lndium Tin Oxide), AZO (Aluminum Zinc Oxide), IZO (Indium Zinc Oxide), Sn0 ₂ (Tin oxide) or ln ₂ 0 ₃ It can be formed. Reflective layer 36 may have a low reflectance, for example, about 50¾ ». Therefore, the incident light resonates with Fabry-Per between the first electrode 31 and the reflective layer 36, and finally outputs to the reflective layer 36 having a relatively low reflectance. The reflective layer 36 may be formed to have reflectivity for light of a specific wavelength band by alternately stacking two or more kinds of transparent dielectric thin films having different refractive indices. Meanwhile, the anti-energization insects 33 and 37 may be disposed between the photoelectric thin film layer 34 and the second electrode 35, as shown in FIGS. 6 and 7.

The reflective optical image shutters 300, 301, and 302 illustrated in FIGS. 5 to 7 may deposit the buffer layer 31 on the substrate 30 by flip-chip bonding. In addition, the current prevention layer 33 and / or 37 and the all-light thin film layer 34 may be deposited by a PLD deposition process. Accordingly, the reflective optical image shutters 300, 301, and 302 may be sequentially stacked on the substrate 30 in the order of the buffer layer 31 and the first electrode 32.

As described above, according to the present invention, a low-cost transparent substrate such as a glass substrate may be used to form a crystalline all-optical thin film worm at low temperature. Therefore, cost reduction and yield improvement effect can be obtained in manufacturing the optical image shutter. In addition, since the all-optical crystal can be formed in the form of a thin film on the glass substrate, the resulting optical image shutter can have a small thickness. The total thickness can be 100 / zm to 1mm, or less than 100 except for the substrate. In addition, since the current prevention layer prevents the inflow of current between the all-light thin film layer and the electrodes, not only can the leakage current be reduced, but also the use of the anti-electric layer similar to the lattice constant of the all-light thin film layer, It can prevent cracking.

Optical image shutters using these crystalline all-optical thin film layers can have very fast shutter opening and closing speeds of several ns and can be large-area, which is why shutters are used in various optical devices such as cameras, flat panel displays, optical modulators, 3D cameras, and LADARs. Can be used as

Thus far, exemplary embodiments of the optical image shutter and its manufacturing method have been described and illustrated in the accompanying drawings in order to facilitate understanding of the present invention. It should be understood, however, that such embodiments are merely illustrative of the invention and do not limit it. And it is to be understood that the invention is not limited to the illustrated and described description. This is because a variety of other variations may occur to those skilled in the art.

[Explanation of code]

10, 30: Substrate 11: Low U reflective layer

12, 32: first electrode 13, 17, 33, 37: energization prevention layer

14, 34: all-light thin film layer 15, 35: second electrode

16: second reflection layer 31: buffer layer

61

Claims

[Patent Claims]

[Claim 1]

An all-light thin film layer having a refractive index changed according to an electric field;

First and second electrodes spaced apart from each other with the all-optical thin film layer interposed therebetween; And

And an anti-energization layer disposed in at least one region between the first electrode and the all-optical thin film layer and between the second electrode and the all-optical thin film layer to prevent current from flowing into the all-optical thin film layer.

[Claim 2]

The method of claim 1, wherein.

The electro-optic thin film layer is _{_{_{KTai- x Nb x O 3 (0}}} <x <l) (KTN), LiNb0 3 (LN), Pb (ZrO -! X Ti x) 0 3 (0

An optical image shutter comprising at least one of <x <l) (PZT) and DAST (4-dimethylamino-N-methyl-4 sti lbazol ium).

[Claim 3]

The method of claim 1, wherein.

And the anti-conduction layer is formed of an insulating material.

[Claim 4]

The method of claim 1,

And the lattice constant of the insulating material is similar to the lattice constant of the all-optical thin film layer.

[Claim 5]

The method of claim 1,

The energization prevention layer is Zr02 ₍ Ti02, MgO, SrTi03, A1203, Hf02, NbO, Si02 and Si3N4 optical image shutter.

[Claim 6]

The method of claim 1,

A buffer layer disposed under the first electrode;

A substrate disposed under the buffer layer; And

And a reflective layer disposed over the second electrode.

[Claim 7]

The method of claim 6,

And the substrate is a crystalline substrate.

[Claim 8]

The method of claim 7, wherein

And the substrate is formed of at least one of Si, GaAs, and Sapphire, and the low U electrode is formed of at least one of Pt, Cu, Ag, Ir, Ru, Al, Au.

[Claim 9]

The method of claim 1,

A first reflective layer disposed under the first electrode;

A substrate disposed under the first reflective layer; And And a second reflecting layer disposed on the second electrode.

[Claim 10]

The method of claim 9,

And the substrate is a transparent amorphous substrate, and the first electrode is formed of a transparent conductive oxide or a transparent oxide semiconductor.

[Claim 11]

The method of claim 10,

And the first electrode is formed of SrTi0 ₃ or ZnO-based material.

[Claim 12]

The method of claim 9,

The reflectance of the second reflecting layer is equal to the reflectance of the first reflecting layer.

[Claim 13]

Forming a first electrode on the first reflective layer;

Forming an all-optical thin film layer on the first electrode whose refractive index changes in accordance with an electric field;

Forming a second electrode on the all-optical thin film layer;

Forming a reflective layer on the second electrode;

At least one of the steps before and after forming the all-optical thin film layer Forming an anti-conduction layer to prevent the current flowing into the all-optical thin film layer; Optical image shutter manufacturing method comprising a.

[Claim 14]

Forming a regenerative layer on the crystalline substrate;

Forming a first reflective layer on the regenerative layer;

Forming a first electrode on the first reflective layer;

Forming an all-optical thin film layer on the first electrode, the refractive index of which is changed in accordance with an electric field;

Forming a second electrode on the all-optical thin film layer;

Forming a second reflective layer on the second electrode;

Bonding the second reflective layer onto the transparent substrate by flip-chip bonding; Removing the regenerative layer to separate the crystalline substrate on the first reflective layer;

And forming an anti-conduction layer for preventing current from flowing into the all-optical thin film layer in at least one of before and after forming the all-optical thin film layer.