WO2012164259A1 - Dispositifs électroniques - Google Patents

Dispositifs électroniques Download PDF

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Publication number
WO2012164259A1
WO2012164259A1 PCT/GB2012/051158 GB2012051158W WO2012164259A1 WO 2012164259 A1 WO2012164259 A1 WO 2012164259A1 GB 2012051158 W GB2012051158 W GB 2012051158W WO 2012164259 A1 WO2012164259 A1 WO 2012164259A1
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Prior art keywords
organic electronic
integrated
electronic device
conducting layer
integrated organic
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PCT/GB2012/051158
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English (en)
Inventor
Antony Sou
Sungjune JUNG
Enrico Gili
Henning Sirringhaus
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Cambridge Enterprise Limited
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Publication of WO2012164259A1 publication Critical patent/WO2012164259A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers

Definitions

  • This invention relates to integrated organic electronic devices, and in particular to smart imaging devices.
  • Organic electronic devices present particular challenges and opportunities.
  • Thin Film Technologies Limited are looking to fabricate non-volatile memory based on ferroelectric polymers
  • PolylC GmbH have a number of patent applications relating to the fabrication of electronic circuits comprising organic components.
  • There is also background prior art relating to colour sensing techniques see, for example, WO2009/013718
  • colour sensors using organic materials have been fabricated (see, for example, US7,586,528 and WO2008/038324).
  • Further background prior art can be found in Organic Electronics, Vol 1 1 , No 1 , pp175-178, Renshaw C.K. et al; W099/54936; US2006/273362; and GB2330451 .
  • an integrated organic electronic device having an integrated optoelectronic sensor and processing circuitry, the device comprising: a substrate bearing at least one organic semiconductor optosensor for light-sensing to provide a light-sensing signal, and organic semiconductor signal processing circuitry comprising a plurality of organic field effect transistors (OFETs), coupled to said optosensor to process said light sensing signal to provide a processed light detection signal output; a first, source-drain conducting layer; a gate dielectric layer; a first organic semiconductor layer between said first, source-drain conducting layer and said gate dielectric layer; wherein said plurality of OFETs is formed in said first organic semiconductor layer, each said OFET having source and drain connections patterned in said first, source-drain conducting layer and a gate connection; a second, interconnection conducting layer; a third, transparent conducting layer; an optosensor organic semiconductor layer formed between said second, interconnection conducting layer and said third, transparent conducting layer, where said optosensor has a first optosensor
  • Embodiments of the above described approach facilitate the integration of optoelectronic devices and their signal processing circuitry on a single substrate - in some preferred embodiments a flexible substrate - on which the sensor and processing circuitry is fabricated using solution deposition techniques.
  • the substrate is a plastic substrate, although other flexible substrates such as a thin metal, for example steel, substrate may also be employed.
  • Embodiments of the above described device thus facilitate reliable fabrication of complex organic electronic circuits in combination with optoelectronic components, in particular addressing some of the problems which occur in such circuits.
  • These problems include constraints on fabrication (low temperature processes are desirable; a solvent deposited material should not dissolve the material underneath); problems relating to aging, which affects device characteristics; and problems relating to variation between the characteristics of organic electronic devices which, because of their relatively limited noise margin, can affect circuit operation.
  • the integrated devices we describe have a structure which facilitates fabrication, addressing the first problem; which in embodiments employs matched optoelectronic devices and/or signal paths, which addresses the second problem; and which, in embodiments, employs combinatorial logic rather than register-based circuitry, which helps to address the third problem.
  • the OFETs may be either N-type or P-type but in some preferred implementations the processing circuitry includes both, complementary n_ and P-types of OFET.
  • the OFET devices may have either a top-gate or a bottom-gate configuration.
  • the sensor which in embodiments is a photodiode (but may alternatively comprise, for example, a phototransistor) is connected to one or more gate connections of an input transistor of the processing circuitry.
  • the photodiode may be fabricated, broadly speaking, in the same layer as the transistors, and the optosensor organic semiconductor layer may then be fabricated from the same semiconductor layer as used for a transistor.
  • a via may connect from the second optosensor electrode (which may be fabricated in the source/drain metal layer) to the gate metal layer, which may be fabricated in the second, interconnection metal layer.
  • the second electrode of the photodiode may be formed from the same metal layer as used for the bottom-gate of this transistor.
  • the photodiode is formed in a separate semiconducting layer to that employed for the transistors, in which case the second optosensor electrode may be formed in the second, interconnection metal layer, and the same layer used to form the connection to the gate of an input transistor.
  • the second optosensor electrode may be formed in the second, interconnection metal layer, and the same layer used to form the connection to the gate of an input transistor.
  • no via is needed between the second optosensor electrode of the photodiode and the gate of the input transistor.
  • a via which, rather than connecting to conducting layers, terminates on the gate dielectric of the transistor: This enables a self-aligned gate (top-gate) transistor structure to be employed.
  • a source-drain metal layer provides the output connection for the circuitry.
  • the integrated device includes an organic light emitting diode (OLED) device having an electrode coupled to this output source- drain metal layer.
  • OLED organic light emitting diode
  • the optosensor and OLED are fabricated in a second layer, broadly speaking above a layer comprising the organic electronic processing circuitry, a via connection may be made between source-drain metal of a bottom-gate (or top-gate) device in a lower layer, to the layer comprising the optoelectronic sensor and OLED.
  • the OLED and optosensor are, broadly speaking, within a common optoelectronics layer (the signal processing circuitry being within a second, transistor layer) the OLED may incorporate an active layer comprising the optosensor organic semi-conducting layer.
  • the third, transparent metal layer of the optosensor prefferably to also provide a transparent electrode for the OLED.
  • the input optosensor may be located above the signal processing circuitry but the output optoelectronic indicator may be located in the same layer as the signal processing circuitry, provided the structure above the output optical device is substantially transparent.
  • the organic semiconductor layer used to implement the optosensor may be the same layer used to form one or more of the transistors.
  • the transparent metal layer is transparent (that is having a transmittance of at least 20%) at at least one wavelength in the range 300nm to 1500nm.
  • references to 'transparent' are to light which includes ultra violet and infra red light, as well as to visible light, - embodiments of the devices we describe may usefully operate using light outside the visible spectrum.
  • the circuitry includes just a single interconnection metal layer, or has just two interconnection metal layers (broadly speaking one for connections in each of two orthoganol directions). This limits the number of vias needed.
  • the signal processing circuitry includes analogue signal processing circuitry including one or more resistors fabricated in an organic semiconductor layer of the device, for example a PEDOT-PSS layer.
  • a resistor may comprise a load resistor for an OFET, and/or a resistor to offset a level of a comparator.
  • a resistor fabricated in an organic semiconductor layer of the device is configured to perform a current-to-voltage conversion to convert a photocurrent from the optosensor to a voltage for input to the signal processing circuitry.
  • the device includes one or more matched pairs of organic semiconductor optosensors.
  • the signal processing circuitry includes two matched signal processing paths, one for each optosensor of a pair.
  • these matched signal processing paths are each coupled to common output stage circuitry implemented in combinatorial logic.
  • This architecture helps to address aging effects within the device.
  • the device includes a plurality of such matched pairs of organic optosensors, for exampled configured as an array to compare an object against a reference object and/or configured for colour matching. In embodiments of the latter approach two or three pairs of optosensors may be employed, either tuned to different wavelengths or, more preferably, all substantially the same with different coloured filters for each pair over the optosensors.
  • the device includes at least a pair of optosensors, configured to receive light from a sensed object and from a reference object.
  • the device is provided with a housing having a pair of windows beneath which the substrate bearing the optosensor resides.
  • the device is configured to be brought adjacent to or into contact with the sensed and referenced object, and to illuminate these objects from within the housing - that is from behind the window or windows through which the optosensors view the objects.
  • the housing includes a light conducting layer or region between the windows in the housing and the substrate to allow light to be input from an edge of the device.
  • a rear portion of the housing opposite the window or windows is transparent to allow illumination of the objections from behind the housing.
  • the optosensors are provided with a light blocking layer or region (which may comprise a thickened second electrode layer), to avoid direct illumination of the optosensors from behind.
  • the signal processing circuitry is screened from stray illumination by the light illuminating the sensed/reference objects.
  • Such a device is in a child's colour-matching and/or shape-matching toy.
  • Other example toys in which such a smart imaging device may be incorporated include a book and a jigsaw.
  • the invention provides an integrated organic electronic device, the device having an integrated optoelectronic sensor and processing circuitry, the device comprising: a substrate bearing at least one organic semiconductor optosensor for light-sensing to provide a light-sensing signal, and organic semiconductor signal processing circuitry comprising a plurality of organic field effect transistors (OFETs), coupled to said optosensor to process said light sensing signal to provide a processed light detection signal output; a first layer of organic semiconductor material in which said OFETs are fabricated; a second layer of organic semiconductor material in which said organic semiconductor optosensor is fabricated.
  • OFETs organic field effect transistors
  • a lower level or region of the device is used for the signal processing circuitry and a second, upper level or region is used for the optosensor(s), for example photodiode(s) and, where implemented, OLED(s).
  • the optosensor(s) for example photodiode(s) and, where implemented, OLED(s).
  • top-gate transistors are employed and thus the gate dielectric lies above the organic semiconductor layer of the transistors (with respect to the substrate).
  • the gate dielectric then comprises an inert, cross-linked material to resist attack from solvent during fabrication of the upper, optoelectronic device(s).
  • the metal interconnect layer(s) are above the gate dielectric and one or more vias is employed to connect between this layer and a source-drain drain layer of the transistors.
  • the substrate is a flexible, in particular plastic, substrate and the integrated organic electronic device is fabricated by solution deposition techniques such as an inkjet or other printing process.
  • Embodiments of the above described integrated organic electronic device may also, conveniently, include a photovoltaic device for powering the circuitry, additionally or alternatively to an external power supply such as a battery.
  • a photovoltaic device may employ, broadly speaking, a corresponding structure to a photodiode, and is thus straightforward to integrate.
  • the invention provides an integrated organic electronic imaging circuit, the circuit comprising a substrate onto which are integrated: at least one organic photosensor to detect an optical signal; an organic transistor circuit coupled to the organic photosensor, and configured to process information from the detected optical signal and to output a drive signal; and a display, coupled to receive said drive signal from said transistor circuit, to provide a display responsive to the processed detected optical signal.
  • a single-substrate/monolithically integrated smart imaging circuit comprising a substrate onto which are integrated: an array of photodiodes comprising at least one organic photodiode to detect an optical signal, an organic transistor circuit which processes the information deduced from the detected optical signal, and a display which receives a drive signal from the transistor circuit and displays an image which depends on the detected optical signal.
  • the substrate is preferably a flexible substrate, such as a flexible plastic substrate or a thin sheet of steel.
  • Flexible substrates allow the realisation of such smart imaging devices in novel form factors.
  • the device can simply be attached as a label to a non- planar surface and allows the integration of smart imaging functions into surfaces that are currently not suitable for integration of rigid devices made from inorganic semiconductors.
  • Plastic substrates also have the advantage of being substantially unbreakable, and this is an important attribute for certain of the applications discussed below, in particular toys, because the use of breakable substrates such as glass would risk doing harm to the user/child.
  • the array of organic photodiodes comprises a first set of reference photodiodes to produce electrical signals that identify the colour of a reference object and a second set of photodiodes to produce electrical signals that identify the colour of the second object.
  • the organic transistor circuit compares the electrical signals generated by the set of reference photodiodes with those generated by the second set of photodiodes and decides whether the colour of the second object is sufficiently similar to that of the reference object. It then sends a signal to the display which produces an image on the display indicating whether a colour match has been detected between the second object and the reference object or not.
  • the display preferably comprises an organic light-emitting diode, but other display elements such as a liquid crystal cell, an electrochromic or a reflective electrophoretic display medium may also be used.
  • the display may comprise a single pixel or a number of pixels and can either be a simple directly driven, segmented display or an active or passive matrix-addressed display.
  • the display may show a static image or may run through a predetermined set of images depending on whether a colour match has been achieved or not.
  • colour matching devices according to the first embodiment as a children's toy, wherein the child is given a first coloured object and places it as a reference object in front of the first set of reference photodiodes and is then asked to look in its environment for second objects that have the same or a similar colour.
  • the child has identified a suitable second object it holds the second array of photodiodes in front of the second object and the display indicates to the child whether it has successfully matched the colour or whether the second object has a different colour to that of the reference object.
  • the toy can be used with a sequence of reference objects of different colours, such as red, green, blue, pink, white or violet.
  • the toy is able to teach a young child recognition of colours, in an attractive and interactive manner.
  • the toy may also make use of an acoustic feedback in addition or in place of the display-based feedback.
  • the toy will have a power source, which could either be an external battery or an integrated power source such as a printed battery or a solar cell integrated onto the same substrate. It may also include a suitable light source to illuminate the reference and second object, or alternatively it may be constructed such that it is able to use the natural illumination present in the environment in which it is used to illuminate the reference and the second object.
  • the colour matching toy may also be used to teach children how to mix colours.
  • the child is given three basic coloured inks or paints, such as cyan, magenta and yellow or red, green and blue and is shown a reference colour. It is then asked to mix the three basic colours in the right portions in order to achieve the reference colour.
  • red can be made by mixing magenta and yellow in a ratio of 1 :1 .
  • cyan colour can be made by mixing green and blue light with same intensity.
  • the colour matching toy is then used to compare the mixed colour with the reference colour and the display indicates whether a colour match has been achieved.
  • the colour matching device may detect, for example, whether the colour of a product that is being manufactured is sufficiently close to a reference colour.
  • the product may, for example, be a car the paint of which needs to match closely with the colour desired by the customer.
  • Another example is a graphic arts proofing process where the colours in a printed document need to be adjusted to specific reference colours in order to achieve the most appealing appearance of the document.
  • the device may detect through optical means and colour matching whether a machine that is equipped to accept consumable parts, such as a printer accepting ink cartridges, cleaning equipment accepting cleaning fluids, etc., is being fitted with the correct consumable.
  • the device may also be able to indicate to the user which type of consumable is present in the machine in case multiple selections are possible, such as in the case of an air freshener with different scents.
  • Yet another example involves the continuous monitoring of the colour of an object in use in order to detect changes in colour that indicate that the product no longer meets required quality standards. This may involve, for example, food applications, where changes in the colour of the product can indicate perishing, or safety applications, where changes in the colour of an object can indicate a hazardous situation.
  • the smart imaging device can monitor continuously the abrasion of a coloured layer on a moving part and indicate an optical and/or acoustic alarm once a colour change is being detected.
  • the device may also be used in consumer electronics applications and may indicate to the user whether a particular colour is being detected in his daily life without the user having to pay attention to detecting the colour. This may involve, for example, the matching of the colour of clothes in a shop with a set of reference colours of the user's favourite clothes at home.
  • the array of organic photodiodes comprises a first array of reference photodiodes to produce electrical signals that identify the shape or dimension of a reference object and a second set of photodiodes to produce electrical signals that identify the shape or dimension of a second object.
  • the organic transistor circuit compares the electrical signals generated by the set of reference photodiodes with those generated by the second set of photodiodes. It then decides whether the shape or dimension of the second object is sufficiently similar to that of the reference object and sends a signal which produces an image on the display or an acoustic signal indicating to the user whether or not a shape or dimension match has been detected between the second object and the reference object.
  • Such monolithically integrated shape matching devices as a toy, wherein the child is first given a first object that has or displays a particular shape, for example a triangle, square or circle and places it as a reference object in front of the first set of reference photodiodes and is then asked to look in its environment for second objects that have the same or a similar shape.
  • a suitable second object it holds the second array of photodiodes in front of the second object and the display indicates to the child whether it has successfully matched the shape or whether the second object has a different shape to that of the reference object.
  • the toy would in this way teach a young child the recognition of shapes in an attractive and interactive manner.
  • the toy can be used with a sequence of reference objects of different shapes, such as triangle, squares, rectangles, lines, circles etc.
  • the toy may also make use of an acoustic feedback in addition or in place of the display-based feedback.
  • the toy will have a power source, which could either be an external battery or an integrated power source such as a printed battery or a solar cell integrated onto the same substrate. It may also include a suitable light source to illuminate the reference and second object, or alternatively it may be constructed such that it is able to use the natural illumination present in the environment in which it is used.
  • the toy may also be used to recognize the individual letters of the alphabet.
  • the child is first shown a letter on a reference card and asked to place the letter on the reference card in front of the first set of photodiodes. It is then asked to identify the same letter again among a sample of letters and place it in front of the second set of photodiodes. If the child identifies the correct letter the display indicates that a match has been achieved. In this way the child will be taught the individual letters of the alphabet.
  • the shape matching device may detect whether, for example, a linear dimension, size or general shape of an object that is being manufactured is equal to that of a reference object. If a deviation from the target dimension or shape is detected the manufacturing process may be halted in order to adjust the process conditions.
  • Another example for the use of such a smart imaging device is the monitoring of the dimensions of an object in use in a machine. The device may continuously compare the size of the object to that of a reference object and indicate if the object begins to deform or elongate indicating that the object is about to fail requiring the machine to be halted to avoid damage.
  • the array of organic photodiodes generate electrical signals which are processed by the transistor circuit to detect an event occurring in time and determine an output signal that depends on whether an event has been detected. This output signal is then communicated to the user either using the display function, an acoustic feedback or stored in a memory integrated on the device.
  • a monolithically integrated smart imaging device may be used as an event counter.
  • the display shows the updated number of events detected or alternatively the number of events could be stored in the internal memory and communicated to a host system through a wireless or wired communication interface.
  • Integrated smart imaging devices may be equipped with wireless communication functions such that they can communicate with a host control system or even the internet. However, in some of the above applications, for example the toy applications, it is sufficient for the device to operate in a standalone manner and to communicate with the user through the integrated display or acoustic feedback function.
  • Fig. 1 shows a schematic diagram of a monolithically integrated smart imaging circuit according to an embodiment of the present invention.
  • Fig. 2 shows a schematic diagram of a monolithically integrated colour matching device according to an embodiment of the present invention.
  • Fig. 3 shows an exemplary circuit diagram for realising a monolithically integrated colour matching circuit with a small number of transistors, diodes and resistors.
  • Fig. 4 shows a schematic diagram of a toy which is used to indicate whether the colour of two objects is matched.
  • Fig. 5 shows a different possible illumination configuration for a monolithically integrated colour matching device.
  • Fig. 6 shows a schematic diagram of a monolithically integrated dimension matching device according to an embodiment of the present invention.
  • Fig. 7 shows a schematic diagram of a monolithically integrated shape matching device according to an embodiment of the present invention.
  • Fig. 8 shows a schematic diagram of a monolithically integrated event counter according to an embodiment of the present invention.
  • Fig. 9 shows schematic diagrams for different device architectures for the monolithic integration of light sensing, information processing and display functions.
  • Organic semiconductors can be processed at low temperatures ⁇ 100-150 ⁇ either by vacuum evaporation or by solution processing and are compatible with manufacturing on low-cost flexible substrates such as poly (ethylene terephtalate) (PET) and poly (ethylene naphtalate) (PEN). They enable embedding electronic or optoelectronic functions into environments and form factors that are not accessible with conventional inorganic semiconductors that require process temperatures > 200-300 °C.
  • Solution- processible organic semiconductors enable new manufacturing methods, such as deposition by wet coating techniques as well as patterning by direct-write printing and microstructuring techniques.
  • OLEDs organic light-emitting diodes
  • OFETs organic field-effect transistors
  • OPDs organic photovoltaic cells
  • OPDs photodetectors
  • active semiconductors for OLEDs require high photoluminescence efficiency while for OFETs semiconductors with high charge carrier mobility are desirable.
  • optimised molecular structures for OLEDs, OFETs and OPDs are different, the processing characteristics as well as thermal and mechanical properties of most organic semiconductors are sufficiently similar that monolithic integration of these different device functions onto a common plastic substrate is easier in principle than it would be with inorganic semiconductors such as silicon and GaAs.
  • Such monolithically integrated devices potentially offer a broad range of functionalities and these could be realised with the novel form factors and attributes of lightweight, flexibility and robustness that are enabled by the use of plastic substrates.
  • current first generation commercial applications of organic electronics, such as OLED displays and active matrix OTFT flexible displays do not involve integration of more than one type of organic device.
  • OTFT integrated circuits are currently limited in their ability to perform complex information processing tasks because it is challenging to print integrated circuits with more than a few hundred active and passive elements with a suitable yield and uniformity of characteristics, and integration organic (light) sensing and display elements with a silicon integrated circuit, which is feasible, would be complex and increase the manufacturing cost.
  • organic smart imaging devices based on simple combinatorial logic architectures.
  • an integrated optoelectronic circuit which receives an input signal from its environment and which is able to switch its output between a finite number of possible states depending on the input signal received, without the use of a register or memory element.
  • OPD light sensing
  • OTFT circuits for information processing
  • display element for indication of the output state
  • energy harvesting functions implemented with either thin film batteries or OPV cell, all integrated onto a common substrate.
  • the smart imaging devices are configured for applications in toys, industrial processes and consumer electronics to achieve user requirements without requiring highly complex information processing and may in some cases be realized with less than 100 active and passive elements.
  • FIG. 1 shows the general configuration of a smart imaging circuit 100 according to an embodiment of the present invention which is integrated monolithically onto a common, flexible substrate.
  • a light signal is detected by an array 102 of photodiodes.
  • the photodiodes produce electrical signals that are a measure of the light intensity detected by each of the photodiodes.
  • a transistor circuit 104 records these electrical signals and performs a series of analog and/or digital operations to analyse the detected light signals and determine whether a defined configuration/event has been detected by the photodiodes.
  • the transistor circuit then also produces a drive signal 106 to address a display unit 108 to indicate to the user visually that the defined configuration/event has been detected.
  • the device is powered by a power source 1 10, which can, for example, be an external battery or mains power source. However, preferably, the power source is a printed battery or a printed solar cell and is integrated onto the same substrate.
  • the device may also have other functions, such as a loudspeaker 1 12 which provides an acoustic feedback to the user when the defined configuration/event has been detected.
  • the device may also have an integrated memory 1 14 where information derived from the signals of the photodiodes is stored. This information is transmitted to a host system with more sophisticated information processing capability through a communications interface 1 16, which may be a wireless, radiofrequency (RF) transmitter or a simple electrical contact pad interface.
  • RF radiofrequency
  • the device may also be able to sense stimuli other than light, for example, it may have integrated chemical, biological or mechanical sensors 1 18 integrated together with the light sensors.
  • Fig. 2 shows a schematic diagram of a smart colour matching circuit 200 according to an embodiment of the present invention which is integrated monolithically onto a common, flexible substrate 202.
  • This is a specific embodiment of the general smart imaging device shown in Fig. 1 .
  • the array of photodiodes 204 is configured to detect whether the colour of a second object is matched to that of a reference object.
  • this function is implemented with three pairs of photodiodes (PD, PDi ref ).
  • Each pair is configured to be sensitive to a particular wavelength range of the optical spectrum, for example PDi and PDi Ref are configured to be sensitive to the green portion of the spectrum, PD 2 and PD 2 Ref to the red portion of the spectrum and PD 3 and PD 3 Ref to the blue portion of the spectrum.
  • PDi , PD 2 and PD 3 are exposed to light reflected from or transmitted through the second object, while PD , PD 2 Ref and PD 3 Ref are exposed to light reflected from or transmitted through the reference object.
  • Each photodiode is connected to a resistor 206a-f or a more complex current-voltage converter, which converts the photocurrent generated in the PD as a result of light exposure into a voltage.
  • the two photodiodes of each pair and the corresponding resistors are preferably very similar or identical in their configuration, size and light detecting characteristics, so that when the object and the reference object have the same colour the two photodiodes in each pair produce the same electrical signals.
  • the colour g of an object can be uniquely determined by measuring the tristimulus values R,G,B of that colour with respect to three primary colours R , G , B .
  • Two colours that have the same R,G, B values appear identical, even if they do not have identical spectral energy distributions (in which case the two colours are called metameric colours).
  • the R, G, B tristimulus values can be measured, for example, with three photodiodes of different spectral sensitivity.
  • the method of colour matching used in embodiments of the present invention is to detect whether the tristimulus values of the second object and the reference object detected by PD ! and PDi Ref , PD 2 and PD 2 Ref and PD 3 and PD 3 Ref , respectively, are sufficiently close to each other that one can assume the colours of the second object and the reference object to be identical.
  • any set of primary colours other than R, G, B can alternatively be used.
  • the photodiodes can be configured to have spectral sensitivity in different parts of the optical spectrum in two ways. It is possible to select the band gap of the active organic semiconductor material of the OPDs such that the active light absorbing material of each of the three pairs of OPDs only absorbs light in a defined part of the optical spectrum (see Lanzani, Applied Physics Letters 90, 163509 2007). This provides, in principle, an elegant way to realize PDs with primary sensitivity in the red, green and blue part of the spectrum, respectively, simply by changing the molecular structure of the active semiconducting material. However, this uses deposition and integration of three different organic semiconductor materials onto the substrate and increases process complexity. A simpler method to achieve wavelength sensitivity is to deposit a colour filter on top of the photodiodes.
  • all six photodiodes can be realized with the same device architecture and active materials and the OPD is selected to have a high quantum efficiency over a broad portion of the visible spectrum.
  • This can be achieved, for example, with a state-of-the-art materials system used in OPVs, for example, based on bulk heterojunctions of poly[N-900-hepta-decanyl-2,7-carbazole-alt- 5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole) (PCDTBT) with the fullerene derivative [6,6]-phenyl C70-butyric acid methyl ester (PC70BM) (Park, Nature Photonics 3, 297 (2009).
  • PCDTBT poly[N-900-hepta-decanyl-2,7-carbazole-alt- 5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)
  • PC70BM fullerene derivative
  • This system has a high quantum efficiency of > 50% from 400-650 nm. If colour filters that transmit only red, green or blue light are placed on top, PD's for the individual primary colours can be realized. Only one active OPD semiconductor material needs to be integrated in this case and the realisation of a colour filter is potentially easier since the colour filter can be printed, for example on one of the encapsulation films on the device (see Figure 9C) or on the back of the substrate.
  • the integrated transistor circuit has parallel, matched analogue signal pathways 208a-c and in embodiments employs a combinatorial logic circuit output stage 210 without the need for a memory element.
  • the circuit compares the signal from the two photodiodes in each pair and produces, for example, a logic LOW signal if the difference signal from the two photodiodes is larger than a threshold value and a logic HIGH signal if the difference signal from the two photodiodes is smaller than a threshold value, and amplifies the difference signal.
  • a logic circuit then ensures that the output from the logic circuit enters a particular first state, only when the difference signal from each of the three pairs of photodiodes is smaller than a threshold value ((Match ? - Yes) condition). As soon as one or more of the three difference signals is larger than the threshold value, the output from the logic circuit enters a second state ((Match ? - No) condition).
  • This output signal is then used to generate a drive signal 212 for the display 214. If all three pairs of photodiodes generate a difference signal less than the threshold value the display is made to display a first image (or sequence of images) indicating that the colours of the object and the reference object are matched. If one or more of the three difference signals is larger than the threshold value, the display is driven to display a second image (or sequence of images) indicating that the colour of the object and the reference object are not matched.
  • the display preferably comprises an organic light-emitting diode, but other display elements such as a liquid crystal cell, an electrochromic or a reflective electrophoretic display medium may also be used.
  • the display may comprise a single pixel or a number of pixels and can either be a simple directly driven, segmented display or an active or passive matrix-addressed display.
  • the display may show a static image or may run through a predetermined set of images depending on whether a colour match has been achieved or not.
  • Fig. 3 shows an exemplary circuit diagram with a small number of transistors, diodes and resistors for realising the monolithically integrated colour matching device of Fig. 2, in which like elements are indicated by like reference numerals. This is a specific exemplary implementation and alternative architectures and designs of individual blocks may be used.
  • Each photodiode is connected to two resistors whose functions are to perform the current-voltage conversion for the photodiode current and also to bias the resulting voltage output into the appropriate operating region of the following comparator circuit.
  • Other combinations and topologies to perform the current-voltage conversion and the biasing are possible.
  • a resistor may be placed in series with the diode to perform the current-voltage conversion, and/or an additional resistor may be placed between the photodiode and the VSS or ground supply line to provide alternative biasing possibilities.
  • Two photodiodes are paired with two comparators in the exemplary circuit. The current outputs from the photodiodes having been converted to a voltage are then applied to the inputs of the two comparators.
  • the two photodiodes are cross connected to two comparators in the manner shown in Fig. 3.
  • a comparator is designed in such a way that one input is offset from the other input.
  • the cross connection of the comparators together with the effect of the offset switching threshold result in an indication of approximate voltage match between the two photodiodes.
  • the two outputs of the two comparators will be HIGH.
  • one of the comparator outputs will be LOW.
  • three pairs of photodiodes are connected respectively to three pairs of comparators. Each pair of comparators produces two outputs so that there are a total of six outputs. These six outputs are connected to a six-input NAND gate.
  • the six input NAND gate is implemented by six P-type transistors performing the pull-up function with a solitary N-type performing a static pull- down function. It is recognised that a person skilled in the art may implement other NAND gate designs including but not limited to alternative pull-up and pull-down designs.
  • the output of the NAND gate will be LOW if each pair of photodiodes are approximately equal as described above. This situation represents an approximate colour match. If any photodiode produces a current which is significantly different from its paired photodiode then the output of the NAND gate will be HIGH. This presents a colour mis-match.
  • the output of the NAND gate may then be used to drive either directly or indirectly an LED or other device.
  • the exemplary circuit shows that the NAND output is directly connected to an LED connected to VDD through a resistor.
  • Other designs may include but not limited to an LED connected through a resistor to VSS, or an intermediate driver stage which may increase current.
  • the exemplary circuit does not show the implementation of the bias voltage(s) employed for the comparators and the NAND gate. For example, this may be simply produced by a voltage divider constructed from resistors but other implementations are also possible. Also, the exemplary circuit does not show any hysteresis control on the output of the comparators. Hysteresis may be implemented by a transistor providing positive feedback on the comparator output. Once again, alternative hysteresis control circuits may be employed.
  • Fig. 4 illustrates the use of a monolithically integrated colour matching device in a children's toy 400.
  • the toy may make use of the ability of the colour matching device 402 which is built on a flexible substrate to conform to and wrap around a non-planar surface, such as the surface of a cylinder.
  • the child holds the toy in his hand using a suitable designed handle 404.
  • the colour matching device is embedded in or fixed to the surface of the toy and the array of reference photodiodes 406 (PDi. 3 Ref ) and second object photodiodes 408 (PDi -3 ) are located in spatially separate areas on the surface of the toy.
  • the child is asked to place a reference object 410 in front of the array of reference photodiodes and then asked to look in its environment for second objects 410 that are similar to or match the colour of the reference objects and place these objects in front of the photodiode array.
  • a colour-match indication is shown on display 414.
  • the toy may be powered by a battery 412 integrated into the housing or by an integrated solar cell or printed battery.
  • the toy may for example have the shape of a sheet or a credit or playing card onto which the reference object and the object are placed.
  • the sheet or card may be flexible such that the child can bend it around the objects.
  • Fig. 5 shows two examples of red, green, and blue illumination configurations for integrated organic optoelectronic devices 500, 550.
  • the (red, green, and blue) reference photodiodes 8 and the object photodiodes 9 on substrate 7 are embedded in an opaque housing 10.
  • the reference object 13 and the second object 14 are separated from the photodiodes by an aperture 12 and a transparent spacer 1 1 .
  • the aperture 12 blocks light impinging onto the photodiodes from the areas of the front surface which are not covered by the reference object or the second object.
  • the transparent spacer 1 1 allows light 15 from the environment to enter from the side, be reflected off the surface of the objects and then fall onto the photodiodes.
  • the housing 10 of the toy and the substrate 7 is transparent, such that light can enter from the back of the substrate.
  • an opaque material 10' such that the electrical signal generated by the photodiodes is not dominated by light 15' incident from the back that is not reflected off the objects.
  • This opaque material may, for example, be a black paint coated onto the back of the substrate of the colour matching device, or may simply be provided by one of the electrodes of the photodiode being opaque.
  • OPDs organic photodiodes
  • OPDs organic photodiodes
  • a black matrix light blocking layer may be integrated onto the top or bottom side of the substrate 7, but leaving the peripheral area of the photodiodes transparent to light. Both configurations ensure that most of the light impinging onto the photodiodes is light that has been reflected of the surface of the objects (or been transmitted through the objects in case the objects are transmissive).
  • Fig. 6 shows a schematic diagram of a monolithically integrated dimension matching device 600 according to an embodiment of the present invention.
  • the device is configured similarly to the colour matching device described above.
  • An array of reference photodiodes 602 is configured to image the dimension/length of a reference object.
  • a second array of photodiodes 604 is configured to image the dimension/length of a second object.
  • the device uses a larger number of photodiodes in each of the two arrays and configures the photodiodes into a two-dimensional pixelated array. The number of pixels may be increased in order to achieve higher precision measurements of dimension differences.
  • Integrated circuit 606 analyses the signals generated by the individual pixels and measures the targeted linear dimension of the reference object and the second object, providing an output to display 608.
  • the circuit configuration used for this may depend on the specific shape of the two objects and the nature of the dimensional measurement desired.
  • the measurement may simply consist of counting the number of pixels onto which the defined optical contrast/colour is being detected.
  • the photodiodes may be configured such that they are most sensitive at the wavelengths that are emitted from the line of defined optical contrast or colour. For example, if the length of a red line on a green background is to be measured the array of photodiodes may only comprise photodiodes that have high sensitivity in the red part of the spectrum.
  • the integrated circuit compares the dimensional measurements for the reference and the second object and generates a drive signal for the display which causes the display to indicate whether the dimensions of the reference object and the second object are identical within a defined tolerance or whether they are different.
  • the signal processing may be analogue (with matched signal paths from the reference and test photodiodes), for example summing photodiode voltages or currents to perform the 'count', and then comparing the results as previously described.
  • Fig. 7 shows a schematic diagram of a monolithically integrated shape matching device 700 according to an embodiment of the present invention.
  • the device is configured similarly to the dimension matching device described above.
  • An array of reference photodiodes 702 is configured to image the shape of a reference object.
  • a second array of photodiodes 704 is configured to image the shape of a second object.
  • Integrated circuit 706 analyses the signals generated by the individual pixels of the two arrays and determines whether the reference object has the same geometrical shape as the second object.
  • the reference object and the second object do not necessarily need to have the same size or orientation.
  • the reference object and the second object preferably exhibits a clear optical contrast/colour against a background, such that the photodiodes can be configured such that they are most sensitive at the wavelengths that are emitted from the line of defined optical contrast or colour. For example, if the two objects are red on a green background the array of photodiodes may only comprise photodiodes that have high sensitivity in the red part of the spectrum.
  • the integrated circuit determines the shape of the two objects, for example, by measuring/counting the number of corners detected and/or measuring the angles at the boundaries of the objects by determining the number of pixels with object signal that have neighbouring pixels on which no object signal is being detected.
  • the integrated circuit does not necessarily need to determine the absolute shape of the two objects, but may simply determine whether the two shapes are similar, i.e. have the same number of corners/angles. Again this may be performed in the digital and/or analogue domain, in the latter case again preferably employing matched signal paths.
  • the integrated circuit then decides whether the two objects have the same shape or not and generates a corresponding drive signal for the display 708 (and/or a loudspeaker).
  • Fig. 8 shows a monolithically integrated event counter 800 according to an embodiment of the present invention.
  • a single photodiode 802 may be sufficient to detect events when a particular optical contact is being generated on the photodetector. This optical contrast may correspond, for example, to a shadow falling on the photodiode or a light pulse hitting the photodetector. More complex arrays of photodiodes may be configured to detect more complex events, for example, consisting of the coincidence of several individual events.
  • Integrated circuit 804 registers the voltage pulse generated by the photodetector in each event and counts the number of events over a period of time. It outputs the current count onto an alphanumeric display 806 and/or an integrated memory (not shown).
  • FIG. 9 shows schematic diagrams for different device architectures 900, 930, 960 for the monolithic integration of light sensing, information processing and display functions using organic/printable electronic materials.
  • the device is fabricated on a lightweight, robust, flexible substrate 16, such as a PET or PEN plastic substrate or a steel substrate.
  • the substrate preferably has a suitable barrier film 17 protecting the device against exposure to harmful atmospheric species, such as moisture, penetrating into the layer stack from the bottom.
  • the transistors, photodiodes and display elements are fabricated on the same level directly on the surface of the substrate.
  • the substrate may have suitable substrate planarization or substrate modification layers deposited on its surface prior to the deposition of electrodes and active layers.
  • Figure 9(A) illustrates a top-gate transistor architecture; an analogous structure applies to other architectures, such as bottom gate OFETs.
  • a layer of transistor source- drain electrodes 18 and bottom electrodes 19 and 20 for the photodiode and the display element are defined on the surface of the substrate. Processes such as direct- write printing or photolithographic patterning may be used to structure these electrodes.
  • the electrodes 18, 19 and 20 are made from the same conducting material, for example an inorganic metal such as gold, copper or silver or a conducting polymer, such as PEDOT/PSS.
  • an inorganic metal such as gold, copper or silver
  • a conducting polymer such as PEDOT/PSS.
  • This may use different metals for the three electrodes or the local deposition of additional layers, such as self-assembled monolayers or conducting polymers, to modify the work function and charge injection/extraction properties of any of these electrodes.
  • the manufacturing process then involves deposition of the active semiconducting layers 21 of the photodiodes, 25/26 of the respective n-type and p-type OTFTs and 122 of the display element.
  • Layer 22 may, for example, be an OLED emissive layer.
  • Other active layers for other functional elements may also be deposited at this stage, for example the active layer of an OPV cell.
  • the active semiconductor layers can be deposited onto the substrate by direct printing, such as inkjet printing or gravure printing, or as a continuous layer by a coating technique and then patterned by a subtractive process, such as photolithography (see, for example, Chang et al., Advanced Functional Materials 20, 2825 (2010)).
  • the photodiode(s) 33 may be configured to have spectral sensitivity in different parts of the optical spectrum in two ways. It is possible to select the band gap of the active organic semiconductor material of the OPD such that the material only absorbs light in a defined part of the optical spectrum (see Lanzani, Applied Physics Letters 90, 163509 2007). This provides, in principle, an elegant way to realize PDs with primary sensitivity in the red, green and blue part of the spectrum, respectively, simply by changing the molecular structure of the active semiconducting material. However, this uses the deposition and integration of three different organic semiconductor materials. A simpler method to achieve wavelength sensitivity is to deposit a colour filter on top of the photodiodes.
  • the PD is selected to have a high quantum efficiency over a broad portion of the visible spectrum. This can be achieved, for example, with a state- of-the-art materials system used in OPVs, for example, based on bulk heterojunctions of poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20, 10,30- benzothiadiazole) (PCDTBT) with the fullerene derivative [6,6]-phenyl C70-butyric acid methyl ester (PC70BM) (Park, Nature Photonics 3, 297 (2009).
  • PCDTBT poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20, 10,30- benzothiadiazole)
  • PC70BM fullerene derivative [6,6]-phenyl C70-butyric acid methyl ester
  • This system has a high quantum efficiency of > 50% from 400-650 nm. If colour filters that transmit only red, green or blue light are placed on top, PD's for the individual primary colours can be realized. Only one active OPD semiconductor material needs to be integrated in this case and the realisation of a colour filter is potentially easier since the colour filter can be printed, for example on one of the encapsulation films on the device (see Figure 9C) or on the back of the substrate.
  • the display element 34 may be realized by laminating onto electrode 19 a reflective, bistable display film, for example, a film of an electrophoretic display element. This choice offers lower power consumption than OLED and also has less stringent stability and encapsulation requirements than OLED.
  • the electrode 19 remains exposed in a portion of the substrate at the end of the process.
  • the electrophoretic film which typically contains a conducting lamination adhesive, the electrophoretic medium and a top transparent electrode on a plastic substrate may then simply be laminated at the end of the process.
  • At least one of the electrodes 24 of the photodiodes 24 and the electrode 23 of the display element should be transparent to light.
  • the top electrode is transparent. If the photodiodes are formed in a so- called "inverted" configuration the top electrode will be the hole extracting anode and may, for example, be formed from a PEDOT/PSS conducting polymer with good optical transparency.
  • an additional fine metal grid may be printed on top of the PEDOT.
  • the printed metal electrode for example, silver
  • the bottom electrode may be formed from a non-transparent metal electrode of gold, silver copper or aluminium modified or a layer of indium tin oxide (ITO).
  • ITO indium tin oxide
  • the surface of this electrode should be modified with a surface layer that lowers the work function of the electrode, such as a layer of a metal oxide, such as zinc oxide (Vaynzof et al., Appl. Phys. Lett. 97, 033309 (2010)).
  • the transparent electrode is the bottom, hole extracting electrode and can be fabricated from a transparent conducting polymer, such as PEDOT/PSS or a combination of PEDOT/PSS with a transparent ITO electrode or a grid of metal lines if higher conductivity is needed.
  • the top electrode may be formed from an opaque film of a low work function metal film such as Al or Ba/AI or a printed metal such as silver.
  • a low work function metal film such as Al or Ba/AI
  • a printed metal such as silver.
  • the light may enter the photodiode through the back of the substrate.
  • Alternative configurations for the photodiode electrodes may also be used.
  • layer 25 comprises an organic semiconductor layer capable of high mobility n-type OFET operation, such as poly ⁇ [N,N9-bis(2-octyldodecyl)- naphthalene-1 ,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)
  • layer 26 is an organic semiconductor layer capable of high mobility p-type OFET operation, such as poly(2,5- bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene) (pBTTT) (McCulloch, Nat. Mat. 5, 328 (2006)).
  • pBTTT poly(2,5- bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene)
  • the substrate is then coated with a thin gate dielectric layer 27, such as a layer of polymethylmethacrylate (PMMA), which provides the electrical insulation between the active semiconducting layers of the transistors and the respective gate electrodes 28.
  • PMMA polymethylmethacrylate
  • layers 25 and 26 are deposited immediately prior to the gate dielectric deposition, i.e. the fabrication steps for the OLED and the OPD, including the deposition of their top electrodes, preferably occur prior to the deposition of the transistor active layers 25 and 26.
  • the fabrication steps for the OLED and the OPD including the deposition of their top electrodes, preferably occur prior to the deposition of the transistor active layers 25 and 26.
  • via-hole interconnections 29 are used. These may be fabricated, for example, by laser ablation, solvent etching (Kawase et al, 13, 1601 (2001 )) or other techniques.
  • an optically transparent top film 30 which is preferably also equipped with a barrier/encapsulation film 31 .
  • An edge encapsulation 32 ensures that no ingress of moisture and other potentially damaging species can occur from the side.
  • the transparent top film may also have formed on it an array of colour filters 37 in order to sensitize the individual photodiodes to different spectral regions ( Figure 9C).
  • Fig. 9B illustrates an alternative architecture 930, where the photodiode 33 and the display element 34 are formed on the top of the surface of the gate dielectric.
  • Fig. 9C illustrates a configuration, similar to that in Figure 9B, where the transistors have a self-aligned gate architecture. This is realized by depositing a first, thin gate dielectric material 27 onto the active semiconducting layers, and then depositing a thicker dielectric spacer layer 35, which is patterned such as to open up trenches just above the transistor channels, for example as described by Noh, Nat.
  • the gate dielectric layer 27 and the dielectric spacer layer 35 should be chosen to be inert during the subsequent processing steps of the photodiodes and the display element, in particular they should not be dissolved or swelled during any of the subsequent solution deposition steps; they may, for example, comprise a cross-linked polymer.
  • the active semiconductor layers and dielectrics of the transistors, photodiodes and any OLEDs are preferably fabricated from solution-processible organic semiconductors, conjugated polymers and dielectrics in order to be compatible with low cost, low-temperature flexible substrates and to achieve low manufacturing cost.
  • one or several of the active layers can also be made from an organic semiconductor deposited from vacuum phase or an organic dielectric layer deposited by chemical vapour deposition, such as parylene.
  • other carbon-based semiconductors and conductors, such as carbon nanotubes or graphene may be used as electrode materials or as active semiconductors.
  • any of the devices may also contain low-temperature processible inorganic materials that are compatible with manufacturing on flexible substrates, such as sputtered or vacuum deposited amorphous metal oxide semiconductors as described, for example, in Banger et al. (Nat. Mat. 10, 45 (201 1 )), or other precursor or nanoparticle or nanowire based inorganic semiconductors.
  • low-temperature processible inorganic materials that are compatible with manufacturing on flexible substrates, such as sputtered or vacuum deposited amorphous metal oxide semiconductors as described, for example, in Banger et al. (Nat. Mat. 10, 45 (201 1 )), or other precursor or nanoparticle or nanowire based inorganic semiconductors.

Abstract

L'invention concerne un circuit organique intégré d'imagerie électronique, le circuit comprenant un substrat sur lequel sont intégrés : au moins un photocapteur organique destiné à détecter un signal optique ; un circuit de transistors organiques couplé au photocapteur organique et configuré pour traiter des informations provenant du signal optique détecté et produire en sortie un signal d'attaque ; et un écran d'affichage, couplé pour recevoir ledit signal d'attaque dudit circuit de transistors et pour fournir un affichage en réponse au signal optique détecté et traité. Des modes de réalisation de l'invention utilisent un ou plusieurs réseaux pour comparer des couleurs et/ou des formes, par exemple pour le jouet d'un enfant.
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