WO2012162276A3 - Spatially selective laser annealing applications in high-efficiency solar cells - Google Patents

Spatially selective laser annealing applications in high-efficiency solar cells Download PDF

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Publication number
WO2012162276A3
WO2012162276A3 PCT/US2012/038907 US2012038907W WO2012162276A3 WO 2012162276 A3 WO2012162276 A3 WO 2012162276A3 US 2012038907 W US2012038907 W US 2012038907W WO 2012162276 A3 WO2012162276 A3 WO 2012162276A3
Authority
WO
WIPO (PCT)
Prior art keywords
techniques
solar cells
selective
emitter
disclosed
Prior art date
Application number
PCT/US2012/038907
Other languages
French (fr)
Other versions
WO2012162276A2 (en
Inventor
Mehrdad M. Moslehi
Virendra V. Rana
Pranav Anbalagan
Heather DESHAZER
Vivek SARASWAT
Pawan Kapur
Original Assignee
Solexel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/303,488 external-priority patent/US20130164883A1/en
Application filed by Solexel, Inc. filed Critical Solexel, Inc.
Priority to KR1020137034083A priority Critical patent/KR101532721B1/en
Publication of WO2012162276A2 publication Critical patent/WO2012162276A2/en
Publication of WO2012162276A3 publication Critical patent/WO2012162276A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
PCT/US2012/038907 2011-05-20 2012-05-21 Spatially selective laser annealing applications in high-efficiency solar cells WO2012162276A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020137034083A KR101532721B1 (en) 2011-05-20 2012-05-21 Spatially selective laser annealing applications in high-efficiency solar cells

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161488684P 2011-05-20 2011-05-20
US61/488,684 2011-05-20
US13/303,488 US20130164883A1 (en) 2007-10-06 2011-11-23 Laser annealing applications in high-efficiency solar cells
US13/303,488 2011-11-23

Publications (2)

Publication Number Publication Date
WO2012162276A2 WO2012162276A2 (en) 2012-11-29
WO2012162276A3 true WO2012162276A3 (en) 2013-02-28

Family

ID=47218018

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/038907 WO2012162276A2 (en) 2011-05-20 2012-05-21 Spatially selective laser annealing applications in high-efficiency solar cells

Country Status (2)

Country Link
KR (1) KR101532721B1 (en)
WO (1) WO2012162276A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US9455362B2 (en) 2007-10-06 2016-09-27 Solexel, Inc. Laser irradiation aluminum doping for monocrystalline silicon substrates
JP6383291B2 (en) 2011-12-26 2018-08-29 ソレクセル、インコーポレイテッド System and method for improving light capture of solar cells
CN112599637B (en) * 2020-12-09 2022-05-31 成都晔凡科技有限公司 Method for manufacturing solar cell piece and solar cell piece

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010091466A1 (en) * 2009-02-11 2010-08-19 Newsouth Innovations Pty Limited Photovoltaic device structure and method
US20100224229A1 (en) * 2009-03-09 2010-09-09 Pralle Martin U Multi-junction semiconductor photovoltaic apparatus and methods
US7857907B2 (en) * 2007-01-25 2010-12-28 Au Optronics Corporation Methods of forming silicon nanocrystals by laser annealing

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538564A (en) * 1994-03-18 1996-07-23 Regents Of The University Of California Three dimensional amorphous silicon/microcrystalline silicon solar cells
EP0996967B1 (en) * 1997-06-30 2008-11-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Method for producing layered structures on a semiconductor substrate, semiconductor substrate and semiconductor components produced according to said method
CN101675531B (en) * 2007-02-16 2013-03-06 纳克公司 Solar cell structures, photovoltaic modules and corresponding processes
US8088675B2 (en) * 2008-09-19 2012-01-03 Applied Materials, Inc. Methods of making an emitter having a desired dopant profile

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7857907B2 (en) * 2007-01-25 2010-12-28 Au Optronics Corporation Methods of forming silicon nanocrystals by laser annealing
WO2010091466A1 (en) * 2009-02-11 2010-08-19 Newsouth Innovations Pty Limited Photovoltaic device structure and method
US20100224229A1 (en) * 2009-03-09 2010-09-09 Pralle Martin U Multi-junction semiconductor photovoltaic apparatus and methods

Also Published As

Publication number Publication date
KR20140008533A (en) 2014-01-21
WO2012162276A2 (en) 2012-11-29
KR101532721B1 (en) 2015-07-01

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