WO2012155293A1 - Novel electroconductive films for quantum dot sensitized solar cells - Google Patents
Novel electroconductive films for quantum dot sensitized solar cells Download PDFInfo
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- WO2012155293A1 WO2012155293A1 PCT/CN2011/000860 CN2011000860W WO2012155293A1 WO 2012155293 A1 WO2012155293 A1 WO 2012155293A1 CN 2011000860 W CN2011000860 W CN 2011000860W WO 2012155293 A1 WO2012155293 A1 WO 2012155293A1
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- WIPO (PCT)
- Prior art keywords
- layer
- nanotubes
- nanowires
- counter electrode
- electrode
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 37
- 239000012789 electroconductive film Substances 0.000 title description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000002071 nanotube Substances 0.000 claims abstract description 28
- 239000002070 nanowire Substances 0.000 claims abstract description 26
- 239000003792 electrolyte Substances 0.000 claims abstract description 18
- 239000000565 sealant Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 229920005570 flexible polymer Polymers 0.000 claims 1
- 239000000243 solution Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000004020 conductor Substances 0.000 description 14
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 13
- 239000002048 multi walled nanotube Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 239000000395 magnesium oxide Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000002109 single walled nanotube Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229920003182 Surlyn® Polymers 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 5
- 238000000224 chemical solution deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 4
- 239000012943 hotmelt Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- -1 poly(ethylene terephthalate) Polymers 0.000 description 4
- 229910001415 sodium ion Inorganic materials 0.000 description 4
- 229910052979 sodium sulfide Inorganic materials 0.000 description 4
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 4
- 229910000369 cadmium(II) sulfate Inorganic materials 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005035 Surlyn® Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- CJCPHQCRIACCIF-UHFFFAOYSA-L disodium;dioxido-oxo-selanylidene-$l^{6}-sulfane Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=[Se] CJCPHQCRIACCIF-UHFFFAOYSA-L 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 239000010416 ion conductor Substances 0.000 description 2
- 229920000554 ionomer Polymers 0.000 description 2
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 2
- 239000011654 magnesium acetate Substances 0.000 description 2
- 235000011285 magnesium acetate Nutrition 0.000 description 2
- 229940069446 magnesium acetate Drugs 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229920005604 random copolymer Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 150000004763 sulfides Chemical class 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- JEVFKQIDHQGBFB-UHFFFAOYSA-K tripotassium;2-[bis(carboxylatomethyl)amino]acetate Chemical compound [K+].[K+].[K+].[O-]C(=O)CN(CC([O-])=O)CC([O-])=O JEVFKQIDHQGBFB-UHFFFAOYSA-K 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- WGFGZNVQMGCHHV-LURJTMIESA-N (2s)-2-amino-5-(2-aminoimidazol-1-yl)pentanoic acid Chemical compound OC(=O)[C@@H](N)CCCN1C=CN=C1N WGFGZNVQMGCHHV-LURJTMIESA-N 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910015808 BaTe Inorganic materials 0.000 description 1
- 229910004813 CaTe Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001200 Ferrotitanium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005228 Ga2S3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ATUUNJCZCOMUKD-OKILXGFUSA-N MLI-2 Chemical compound C1[C@@H](C)O[C@@H](C)CN1C1=CC(C=2C3=CC(OC4(C)CC4)=CC=C3NN=2)=NC=N1 ATUUNJCZCOMUKD-OKILXGFUSA-N 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- 229910004411 SrTe Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 1
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- ZAWGLAXBGYSUHN-UHFFFAOYSA-M sodium;2-[bis(carboxymethyl)amino]acetate Chemical compound [Na+].OC(=O)CN(CC(O)=O)CC([O-])=O ZAWGLAXBGYSUHN-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- This invention relates to electroconductive films containing titanium dioxide (Ti0 2 ) and one-dimensional conductors such as nanowires and/or nanotubes on a substrate.
- the electroconductive films are useful in preparing quantum dot sensitized solar cells.
- a method for preparing solar cells comprises forming a titanium dioxide (Ti0 2 ) patterned layer comprising nanotubes and/or nanowires contained therein on a conductive substrate electrode; forming quantum dots on the Ti0 2 patterned layer; forming a counter electrode; assembling the substrate electrode having the Ti0 2 layer comprising Ti0 2 and nanotubes and/or nanowires and quantum dots, and counter electrode into a sandwich with a gasket disposed between the surface of the substrate electrode having the Ti0 2 layer comprising nanotubes and/or nanowires and quantum dots coated thereon and the counter electrode; and injecting electrolyte and sealant (240) between the substrate electrode and counter electrode to form a solar cell.
- An insulating layer may be formed between the Ti0 2 layer and the quantum dots.
- a solar cell comprises a substrate electrode having a patterned electroconductive Ti0 2 layer comprising conductive nanotubes and/or nanowires coated thereon. Quantum dots are disposed over the electroconductive Ti0 2 layer. A gasket is disposed between the substrate electrode and a counter electrode. An electrolyte and sealer are injected between the substrate electrode and the counter electrode. An insulating layer may be disposed between the Ti0 2 layer and the quantum dots.
- FIG. 1 is a block diagram illustrating an electroconductive film containing one-dimensional conductors according to one example embodiment.
- FIG. 2 is a block diagram illustrating a solar cell according to one example embodiment.
- CBD refers to chemical bath deposition.
- Cd refers to the element cadmium or its cation Cd .
- DI water refers to deionized water
- DSSC dye sensitized solar cells
- EC film refers to electroconductive films.
- FF refers to the fill factor.
- Fill factor is defined as
- Vm and Im are the voltage and current at optimal operation when the solar cell is operated under a condition that gives the maximum output power.
- FTO or FTO glass refers to glass coated with a layer of fluorinated tin oxide.
- ITO or ITO glass refers to glass coated with a layer of indium tin oxide.
- Jsc refers to short-circuit current density.
- magnesium acetate refers to (CH3COO-) 2 Mg 2+
- ⁇ % refers to the percent conversion of light power to electric power.
- Voc, Isc ,and FF are preferred for higher conversion efficiency
- NH F refers to ammonium fluoride
- MgO refers to magnesium oxide
- MWCNT refere to multi- walled carbon nano tubes.
- NTA refers to sodium aminotriacetate [N(CH 2 COONa) 3 ].
- NTA is a strong complexing agent for Cd 2+ (and many other cations). It is also known as 2,2',2"-nitrilotriacetic acid.
- QD refers to quantum dots.
- Surlyn® is a random copolymer poly(ethylene-co-methacrylic acid) (EMAA) in which the methacrylic acid groups have been neutralized with sodium ions (Na + ).
- EMAC poly(ethylene-co-methacrylic acid)
- SWCNT refers to single-walled carbon nanotubes.
- Rs(0.8V) refers to the solar cell series resistance at 0.8 V.
- Rsh refers to the solar cell shunting resistance
- Solar cells may provide advantages for transportation and photovoltaic power-supply systems equipment. New designs and applications for supplying mobile electricity for lap-top computers, mobile phones, watches, etc. are possible. For example, replacing a rigid substrate by a flexible material allows low-cost fabrication by roll-to-roll mass production. Therefore, by applying flexible-device technologies the formation of solar cells, there exists the possibility of preparing significantly lower cost photovoltaic-generating systems.
- the solar cells include rigid substrate electrodes such as glass coated with indium tin oxide (ITO) or fluorinated tin oxide (FTO)
- ITO indium tin oxide
- FTO fluorinated tin oxide
- the solar cells include flexible substrate electrodes, such as poly(ethylene terephthalate) coated with indium tin oxide (PET-ITO) or fluorinated tin oxide/indium tin oxide (PET/FTO), poly(ethylene naphthalene) coated with tin-doped indium oxide (PEN-ITO) or fluorinated tin oxide/indium tin oxide (PEN/FTO) or flexible titanium metal or stainless steel.
- a transparent flexible electrode useful as a substrate is transparent flexible PET- ITO (125 um thick, having a resistivity of 10-100 ohm/sq, and ⁇ 79%
- a flexible metal such as titanium or stainless steel may be used as the substrate.
- the substrate would be non-transparent and the solar cell would be illuminated through the transparent flexible counter electrode described below.
- the substrate may be patterned, as for example by screen printing, to allow for the electroconductive layer to be laid down in a pattern.
- the solar cells include an electron conductor (EC).
- the electron conductor comprises a semiconductor such as Ti0 2 or ZnO containing one- dimensional conductors such as nanotubes or nanowires.
- the electron conductor may be formed of Ti0 2 that has been sintered.
- the invention includes in-situ synthesis of quantum dots onto the electroconductive Ti0 2 film containing nanotubes and/or nanowires is carried out.
- Quantum dots are semiconductors whose conducting characteristics are closely related to the size and shape of the individual crystal. Generally, the smaller the size of the crystal, the larger the band gap, the greater the difference in energy between the highest valence band and the lowest conduction band becomes, therefore more energy is needed to excite the dot, and concurrently, more energy is released when the crystal returns to its resting state. For example, in fluorescent dye applications, this equates to higher frequencies of light emitted after excitation of the dot as the crystal size grows smaller, resulting in a color shift from red to blue in the light emitted.
- An advantage in using quantum dots is that because of the high level of control possible over the size of the crystals produced, it is possible to have very precise control over the conductive properties of the material. (See, ⁇ http://en.wikipedia.org/wiki/Quantum_dot > Accessed 09/26/2010).
- QDs Inorganic quantum dots (QDs) have potential advantages over molecular dyes:
- Examples of specific pairs of materials for forming quantum dots include but are not limited to MgO, MgS, MgSe, MgTe, CaO, CaS, CaSe, CaTe, SrO, SrS,SrSe, SrTe, BaO, BaS, BaSe, BaTe, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgO, HgS, HgSe, HgTe, A1 2 0 3 , A1 2 S 3 , Al 2 Se 3, Al 2 Te 3> Ga 2 0 3, Ga 2 S 3, Ga 2 Se 3, Ga 2 Te 3, ln 2 0 3, In 2 S 3, In 2 Se 3, In 2 Te 3, Si0 2 , Ge0 2, Sn0 2 , SnS, SnSe, SnTe, PbO, Pb0 2 , PbS, PbSe, PbTe,
- the solar cell is assembled with a counter electrode and sealant.
- Transparent counter electrodes may be prepared by sputter depositing a thin metal film such as a platinum film on a plastic substrate, making a pinhole at the counter electrodes. Counter electrodes may also be prepared by electrochemical deposition from chloroplatinic acid solution.
- the counter electrode may be rigid or flexible; transparent or opaque. If the counter electrode is transparent, illumination through the counter electrode surface may be carried out. If the counter electrode is opaque, then illumination through the photoelectrode may be carried out.
- SWNT single walled carbon nanotubes
- MWNT multiwalled carbon nanotubes
- a typical weight ratio of nanotubes and/or nanowires to Ti0 2 is 0.1 : 1.
- the nanotubes may be hollow or solid. In one embodiment the nanotubes are hollow.
- the length and diameter of the nanotubes and/or nanowires is not critical. In one embodiment the length of the nanotubes may be shorter than the distance between the electrodes.
- the outer diameter of the nanotubes and/or nanowires is typically from about 10 nm to about 50 nm and the length is typically from about 1 ⁇ to about 12 ⁇ .
- the nanotubes and/or nanowires and Ti0 2 paste were then mixed together using a three-roll-mill for 1 hr.
- a small aliquot of the resulting Ti0 2 suspension containing the one-dimensional conductor was spread onto the substrate electrodes using a doctor-blade or screen-printing. After that, the electrodes were slowly heated to 400-500°C in a nitrogen atmosphere for ca. 0.5 hr. on a hotplate or in a muffle oven.
- a thin insulating layer of a metal oxide, such as Ti0 2 or MgO may be formed above the Ti0 2 layer containing the one-dimensional conductor.
- This insulating layer may be several molecular layers thick and is believed to inhibit charge recombination and increase current collection. It may also reduce the photo-oxidative activity of Ti0 2 increasing the stability of solar cell and efficiency.
- FIG. 1 is a block diagram illustrating an electroconductive film (100) containing one-dimensional conductors according to one example embodiment.
- a conductive substrate (102) such as indium tin oxide (ITO) or fluorine doped tin oxide (FTO) on a substrate (not shown) is coated with Ti0 2 (104) suspension containing Ti0 2 having nanowires (106) dispersed therein.
- An insulating layer (108) is arranged over the Ti0 2 layer.
- the substrate may be flexible or rigid.
- CdSe quantum dots are then deposited on Ti0 2 layer containing nanotubes or nanowires by chemical deposition.
- the deposition solution may be prepared by adding 0.7M potassium nitrilotriacetate [N(CH 2 COOK) 3 or NTA] to 0.5M CdS0 4 .
- 0.2M sodium selenosulfate (Na 2 SeS0 3 ) in excess Na 2 S0 3 prepared by stirring 0.2M Se with 0.5M Na 2 S0 3 at 70° for 3-5 hr, was added, resulting in a final composition of 80 mM CdS0 4 , 80mM Na 2 SeS0 3 (which includes 0.12M free Na 2 S0 3 ), and 120 mM NTA.
- the Ti0 2 film is placed in the solution, which is put in a thermostat chamber to control temperature at 10-50°C for several hours and kept in the dark.
- the samples are rinsed with water and dried in a N 2 flow.
- the solar cell is then assembled into a sandwich type cell by pressing the counter electrode against the sensitized electrodes coated with quantum dots. Between the two electrodes, there is an adhesive tape, that is to say, sealed with a hotmelt gasket of 60 um thickness made of the ionomer Surlyn (DuPont). The heating temperature is about 100°C for 10 minutes. This is to control electrolyte film thickness and to avoid short-circuiting of the cell. The active area of the cells may be determined by the area of the hotmelt gasket.
- Surlyn® is a random copolymer poly(ethylene-co-methacrylic acid) (EMAA) in which the
- methacrylic acid groups have been neutralized with sodium ions (Na + ).
- the electrolyte and sealant are then injected through the pinhole.
- the electrolyte comprises a solution of a sulfide salt, sulfur, and an ionic conductor in in a mixture of water and an alcohol.
- a typical electrolyte solution comprises a solution of 1M Na 2 S, 0.1M S, 0.2M KC1, in a mixture of pure water and methanol (volume ratio: 1 : 1).
- a drop of the electrolyte put on the hole in the back of the counter electrode.
- the electrolyte is introduced into the cell via vacuum backfilling.
- the hole may be sealed with a Surlyn layer.
- the gasket has two or more holes.
- FIG. 2 is an expanded block cross section diagram of a solar cell (200) formed in the above manner, using a Ti0 2 photoelectrode containing a one- dimensional conductor.
- a top counter electrode layer (210) is shown with a hole (215).
- Gasket (220) is shown between the top counter electrode layer (210) and a bottom substrate photoelectrode that includes an electroconductive Ti0 2 layer containing one-dimensional conductor (235) with quantum dots.
- electroconductive Ti0 2 layer contains the one-dimensional conductor such as nanowires, Ti0 2 nanotubes, multi-walled carbon nanotubes, single-walled nanotubes, or mixtures thereof.
- the electroconductive layer is coated onto a conductive substrate (230).
- electrolyte and sealer are represented at (240), and may be injected through hole (215) in one embodiment.
- Samples were prepared using Ti0 2 with and without single walled carbon nanotubes and with single walled carbon nanotubes.
- Samples containing multi-walled carbon nanotubes were prepared by dispersing multi-walled carbon nanotubes into a Ti0 2 paste at a weight ratio of 0.1 : 1. The paste was then mixed using a three-roll-mill for one hour. The carbon nanotubes were hollow and had an outer diameter of 15 ⁇ 5 nm and a length of 1 to 5 ⁇ .
- the Ti0 2 layers were prepared by screen printing onto a fluorinated tin oxide glass substrate and heated on a hotplate in a nitrogen atmosphere for 30 minutes at 450°C. A sample was also prepared having a magnesium oxide layer coated above the Ti0 2 layer containing the carbon nanotubes.
- Ti0 2 electrode samples were immersed in an ethanolic solution of 120 mmol/L of magnesium acetate (CH 3 COO " ) 2 Mg 2+ in ethanol for 1 minute at 70°C. They were then heated on a hotplate in a nitrogen atmosphere for 30 minutes at 450°C to form a magnesium oxide insulating layer above the Ti0 2 layer.
- TABLE I shows the composition of the three Ti0 2 layers.
- the mesoscopic Ti0 2 film on the conductive substrate electrode was immersed in NH 4 F (1 M) (ammonium fluoride) solution for about 3 minutes, removed and washed with deionized (DI) water.
- NH 4 F (1 M) ammonium fluoride
- a chemical bath deposition layer was prepared.
- a solution of potassium nitrilotriacetate/cadmium (NTA/Cd) in a ratio of 1.475 : 1 was prepared using CdS0 4 with the concentration of Cd 2+ at 0.2 M (other soluble cadmium salts such as cadmium chloride (CdCl 2 ) or Cd(N0 3 ) 2 can be used if desired.)
- CdCl 2 cadmium chloride
- Cd(N0 3 ) 2 can be used if desired.
- Approximately 2 mL the thus prepared NTA/Cd solution and 2 mL of sodium selenosulphate solution (such Na 2 SeS0 3 solution, 0.2 M) in 1 1 mL deionized water (DI water) were placed in a bottle.
- DI water deionized water
- the pH was adjusted to 10.5.
- the NH 4 F-treated electro- conductive film was placed in the bottle, and the bottle was placed in a thermostated water bath.
- the water bath was at a temperature of 30°C for the chemical bath deposition solution to synthesize and deposit CdSe-quantum dots onto the Ti0 2 films and thereby sensitize it.
- the CdSe-quantum dot sensitized Ti0 2 films were removed from the deposition solution, and washed with deionized water.
- Counter electrodes were prepared by sputter depositing a 100 nm conductive platinum film onto a glass substrate.
- the counter electrode contained two pinholes.
- the electrodes were assembled with a counter electrode as the cathode and filled with electrolyte to provide a quantum dot sensitized solar cell.
- the counter electrode was pressed against the sensitized electrodes coated with quantum dots.
- a hotmelt gasket of 60 um thickness made of the ionomer Surlyn (DuPont) was placed between the two electrodes.
- the assembled solar cell was sealed by heating at about 100°C for 10 minutes. The seal controls the electrolyte film thickness and avoids short-circuiting of the cell.
- the active area of the cells was determined by the area of the hotmelt gasket.
- the electrolyte and sealant were then injected.
- the electrolyte comprises a solution of a sulfide salt, sulfur, and an ionic conductor in in a mixture of water and an alcohol.
- the electrolyte solution comprised a solution of 1M Na 2 S, 0.1M S, 0.2M KC1, in a mixture of pure water and methanol (volume ratio: 1 : 1 ).
- the electrolyte was introduced via a capillary using two holes in the back of the counter electrode. The holes were sealed with an epoxy.
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Abstract
A solar cell (100) is assembled by forming a TiO2 patterned layer containing nanotubes or nanowires (106) on a substrate electrode (102). Quantum dots (QDs) (110) are formed on the TiO2 patterned layer. A gasket is disposed between the flexible substrate electrode (102) and a flexible counter electrode to form a sandwich. Electrolyte and sealant are injected between the substrate electrode (102) and the flexible counter electrode to form the flexible solar cell.
Description
NOVEL ELECTROCONDUCTIVE FILMS FOR
QUANTUM DOT SENSITIZED SOLAR CELLS
Field of the Invention
[0001] This invention relates to electroconductive films containing titanium dioxide (Ti02) and one-dimensional conductors such as nanowires and/or nanotubes on a substrate. The electroconductive films are useful in preparing quantum dot sensitized solar cells.
Background
[0002] Investigation of solar cells is important because of their advantages for transportation and photovoltaic power-supply systems equipment. New designs and applications for supplying mobile electricity for lap-top computers, mobile phones, watches, etc. are possible.
Summary
[0003] A method for preparing solar cells comprises forming a titanium dioxide (Ti02) patterned layer comprising nanotubes and/or nanowires contained therein on a conductive substrate electrode; forming quantum dots on the Ti02 patterned layer; forming a counter electrode; assembling the substrate electrode having the Ti02 layer comprising Ti02 and nanotubes and/or nanowires and quantum dots, and counter electrode into a sandwich with a gasket disposed between the surface of the substrate electrode having the Ti02 layer comprising nanotubes and/or nanowires and quantum dots coated thereon and the counter electrode; and injecting electrolyte and sealant (240) between the substrate electrode and counter electrode to form a solar cell. An insulating layer may be formed between the Ti02 layer and the quantum dots.
[0004] A solar cell comprises a substrate electrode having a patterned electroconductive Ti02 layer comprising conductive nanotubes and/or nanowires coated thereon. Quantum dots are disposed over the electroconductive Ti02
layer. A gasket is disposed between the substrate electrode and a counter electrode. An electrolyte and sealer are injected between the substrate electrode and the counter electrode. An insulating layer may be disposed between the Ti02 layer and the quantum dots.
Brief Description of the Drawings
[0005] FIG. 1 is a block diagram illustrating an electroconductive film containing one-dimensional conductors according to one example embodiment.
[0006] FIG. 2 is a block diagram illustrating a solar cell according to one example embodiment.
Definitions
[0007] The term CBD refers to chemical bath deposition.
[0008] The term Cd refers to the element cadmium or its cation Cd .
[0009] The term DI water refers to deionized water
[0010] The term DSSC refers to dye sensitized solar cells.
[0011] The term EC film refers to electroconductive films.
[0012] The term FF refers to the fill factor. Fill factor is defined as
FF = (VmIm)/(VocIsc), where Voc is the open-circuit voltage (when 1 = 0) and
Isc is the short-circuit current (when V = 0), and Vm and Im are the voltage and current at optimal operation when the solar cell is operated under a condition that gives the maximum output power.
[0013] The term FTO or FTO glass refers to glass coated with a layer of fluorinated tin oxide.
[0014] The term ITO or ITO glass refers to glass coated with a layer of indium tin oxide.
[0015] The term Jsc refers to short-circuit current density.
[0016] . The term magnesium acetate refers to (CH3COO-)2 Mg2+
[0017] The term η% refers to the percent conversion of light power to electric power. The conversion efficiency of the solar cell h% is defined as the ratio of the generated maximum electric output power to the total power of the
incident light Pin: η = (Vmlm)/Pin = VocIscFF/Pin. From this equation, high
Voc, Isc ,and FF are preferred for higher conversion efficiency
[0018] The term NH F refers to ammonium fluoride.
[0019] The term MgO refers to magnesium oxide.
[0020] The term MWCNT refere to multi- walled carbon nano tubes.
[0021] The term NTA refers to sodium aminotriacetate [N(CH2COONa)3].
NTA is a strong complexing agent for Cd2+ (and many other cations). It is also known as 2,2',2"-nitrilotriacetic acid.
[0022] The term QD refers to quantum dots.
[0023] Surlyn® is a random copolymer poly(ethylene-co-methacrylic acid) (EMAA) in which the methacrylic acid groups have been neutralized with sodium ions (Na+).
[0024] The term SWCNT refers to single-walled carbon nanotubes.
[0025] The term Voc is the open-circuit voltage (when the current I = 0).
[0026] The term Rs(0.8V) refers to the solar cell series resistance at 0.8 V.
[0027] The term Rs (Voc) refers to the solar cell series resistance at Voc .
[0028] The term Rsh refers to the solar cell shunting resistance.
Detailed Description
[0029] In the following description, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration specific embodiments which may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that structural, logical, and electrical changes may be made without departing from the scope of the present invention. The following description of example embodiments is, therefore, not to be taken in a limited sense, and the scope of the present invention is defined by the appended claims.
[0030] Solar cells may provide advantages for transportation and photovoltaic power-supply systems equipment. New designs and applications for supplying mobile electricity for lap-top computers, mobile phones, watches, etc. are possible. For example, replacing a rigid substrate by a flexible material
allows low-cost fabrication by roll-to-roll mass production. Therefore, by applying flexible-device technologies the formation of solar cells, there exists the possibility of preparing significantly lower cost photovoltaic-generating systems.
[0031] In one embodiment, the solar cells include rigid substrate electrodes such as glass coated with indium tin oxide (ITO) or fluorinated tin oxide (FTO)
[0032] In some embodiments, the solar cells include flexible substrate electrodes, such as poly(ethylene terephthalate) coated with indium tin oxide (PET-ITO) or fluorinated tin oxide/indium tin oxide (PET/FTO), poly(ethylene naphthalene) coated with tin-doped indium oxide (PEN-ITO) or fluorinated tin oxide/indium tin oxide (PEN/FTO) or flexible titanium metal or stainless steel. A transparent flexible electrode useful as a substrate is transparent flexible PET- ITO (125 um thick, having a resistivity of 10-100 ohm/sq, and ~79%
transmission@55 Onm) .
[0033] In some embodiments a flexible metal such as titanium or stainless steel may be used as the substrate. In such embodiments, the substrate would be non-transparent and the solar cell would be illuminated through the transparent flexible counter electrode described below.
[0034] The substrate may be patterned, as for example by screen printing, to allow for the electroconductive layer to be laid down in a pattern.
[0035] The solar cells include an electron conductor (EC). The electron conductor comprises a semiconductor such as Ti02 or ZnO containing one- dimensional conductors such as nanotubes or nanowires. In some embodiments, the electron conductor may be formed of Ti02 that has been sintered.
[0036] In some embodiments, the invention includes in-situ synthesis of quantum dots onto the electroconductive Ti02 film containing nanotubes and/or nanowires is carried out. There are two methods: chemical bath deposition and dip coating. Both methods utilize a suitable bandgap semiconductor, for example CdSe.
[0037] Quantum dots are semiconductors whose conducting characteristics are closely related to the size and shape of the individual crystal. Generally, the smaller the size of the crystal, the larger the band gap, the greater the difference
in energy between the highest valence band and the lowest conduction band becomes, therefore more energy is needed to excite the dot, and concurrently, more energy is released when the crystal returns to its resting state. For example, in fluorescent dye applications, this equates to higher frequencies of light emitted after excitation of the dot as the crystal size grows smaller, resulting in a color shift from red to blue in the light emitted. An advantage in using quantum dots is that because of the high level of control possible over the size of the crystals produced, it is possible to have very precise control over the conductive properties of the material. (See, < http://en.wikipedia.org/wiki/Quantum_dot > Accessed 09/26/2010).
[0038] Inorganic quantum dots (QDs) have potential advantages over molecular dyes:
(1) They are capable of facile tuning of effective band gaps down to the infra-red (IR) region by changing their sizes and compositions,
(2) They have a higher stability and resistance toward oxygen and water over their molecular dye counterparts,
(3) They open up new possibilities for making multilayer or hybrid
sensitizers; and
(4) They exhibit new phenomena such as multiple exciton generation and use of energy transfer-based charge collection as well as direct charge transfer schemes.
(5) They have the potential for low cost and high light to electricity
conversion efficiency.
[0039] Examples of specific pairs of materials for forming quantum dots (QD) include but are not limited to MgO, MgS, MgSe, MgTe, CaO, CaS, CaSe, CaTe, SrO, SrS,SrSe, SrTe, BaO, BaS, BaSe, BaTe, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgO, HgS, HgSe, HgTe, A1203, A12S3, Al2Se3, Al2Te3> Ga203, Ga2S3, Ga2Se3, Ga2Te3, ln203, In2S3, In2Se3, In2Te3, Si02, Ge02, Sn02, SnS, SnSe, SnTe, PbO, Pb02, PbS, PbSe, PbTe, A1N, A1P, AIAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb.
[0040] The solar cell is assembled with a counter electrode and sealant.
Transparent counter electrodes (CE) may be prepared by sputter depositing a
thin metal film such as a platinum film on a plastic substrate, making a pinhole at the counter electrodes. Counter electrodes may also be prepared by electrochemical deposition from chloroplatinic acid solution. The counter electrode may be rigid or flexible; transparent or opaque. If the counter electrode is transparent, illumination through the counter electrode surface may be carried out. If the counter electrode is opaque, then illumination through the photoelectrode may be carried out.
[0041] For preparation of photoelectrodes, single walled carbon nanotubes (SWNT) and/or multiwalled carbon nanotubes (MWNT) were dispersed with solvent and added into a Ti02 paste. A typical weight ratio of nanotubes and/or nanowires to Ti02 is 0.1 : 1. The nanotubes may be hollow or solid. In one embodiment the nanotubes are hollow. The length and diameter of the nanotubes and/or nanowires is not critical. In one embodiment the length of the nanotubes may be shorter than the distance between the electrodes. In one embodiment, the outer diameter of the nanotubes and/or nanowires is typically from about 10 nm to about 50 nm and the length is typically from about 1 μιτι to about 12 μιη. The nanotubes and/or nanowires and Ti02 paste were then mixed together using a three-roll-mill for 1 hr. A small aliquot of the resulting Ti02 suspension containing the one-dimensional conductor was spread onto the substrate electrodes using a doctor-blade or screen-printing. After that, the electrodes were slowly heated to 400-500°C in a nitrogen atmosphere for ca. 0.5 hr. on a hotplate or in a muffle oven.
[0042] A thin insulating layer of a metal oxide, such as Ti02 or MgO may be formed above the Ti02 layer containing the one-dimensional conductor. This insulating layer may be several molecular layers thick and is believed to inhibit charge recombination and increase current collection. It may also reduce the photo-oxidative activity of Ti02 increasing the stability of solar cell and efficiency.
[0043] FIG. 1 is a block diagram illustrating an electroconductive film (100) containing one-dimensional conductors according to one example embodiment. A conductive substrate (102) such as indium tin oxide (ITO) or fluorine doped tin oxide (FTO) on a substrate (not shown) is coated with Ti02 (104) suspension
containing Ti02 having nanowires (106) dispersed therein. An insulating layer (108) is arranged over the Ti02 layer. The substrate may be flexible or rigid.
[0044] CdSe quantum dots are then deposited on Ti02 layer containing nanotubes or nanowires by chemical deposition. The deposition solution may be prepared by adding 0.7M potassium nitrilotriacetate [N(CH2COOK)3 or NTA] to 0.5M CdS04. Then 0.2M sodium selenosulfate (Na2SeS03) in excess Na2S03, prepared by stirring 0.2M Se with 0.5M Na2S03 at 70° for 3-5 hr, was added, resulting in a final composition of 80 mM CdS04, 80mM Na2SeS03 (which includes 0.12M free Na2S03), and 120 mM NTA. During the deposition, the Ti02 film is placed in the solution, which is put in a thermostat chamber to control temperature at 10-50°C for several hours and kept in the dark.
Afterwards the samples are rinsed with water and dried in a N2 flow.
[0045] The solar cell is then assembled into a sandwich type cell by pressing the counter electrode against the sensitized electrodes coated with quantum dots. Between the two electrodes, there is an adhesive tape, that is to say, sealed with a hotmelt gasket of 60 um thickness made of the ionomer Surlyn (DuPont). The heating temperature is about 100°C for 10 minutes. This is to control electrolyte film thickness and to avoid short-circuiting of the cell. The active area of the cells may be determined by the area of the hotmelt gasket. Surlyn® is a random copolymer poly(ethylene-co-methacrylic acid) (EMAA) in which the
methacrylic acid groups have been neutralized with sodium ions (Na+).
[0046] The electrolyte and sealant are then injected through the pinhole. In one embodiment the electrolyte comprises a solution of a sulfide salt, sulfur, and an ionic conductor in in a mixture of water and an alcohol. A typical electrolyte solution comprises a solution of 1M Na2S, 0.1M S, 0.2M KC1, in a mixture of pure water and methanol (volume ratio: 1 : 1). A drop of the electrolyte put on the hole in the back of the counter electrode. The electrolyte is introduced into the cell via vacuum backfilling. The hole may be sealed with a Surlyn layer. In an embodiment, the gasket has two or more holes. The electrolyte is introduced through one hole and allowed to flow through the cell until electrolyte begins to flow out the other hole(s). The holes may then be sealed with a Surlyn layer.
[0047] FIG. 2 is an expanded block cross section diagram of a solar cell (200) formed in the above manner, using a Ti02 photoelectrode containing a one- dimensional conductor. A top counter electrode layer (210) is shown with a hole (215). Gasket (220) is shown between the top counter electrode layer (210) and a bottom substrate photoelectrode that includes an electroconductive Ti02 layer containing one-dimensional conductor (235) with quantum dots. The
electroconductive Ti02 layer contains the one-dimensional conductor such as nanowires, Ti02 nanotubes, multi-walled carbon nanotubes, single-walled nanotubes, or mixtures thereof. The electroconductive layer is coated onto a conductive substrate (230). Finally, electrolyte and sealer are represented at (240), and may be injected through hole (215) in one embodiment.
Example - Preparation of Solar Cells Containing Electroconductive Layers
One-Dimensional Conductors
[0048] Samples were prepared using Ti02 with and without single walled carbon nanotubes and with single walled carbon nanotubes.
[0049] Samples containing multi-walled carbon nanotubes (MWCNT) were prepared by dispersing multi-walled carbon nanotubes into a Ti02 paste at a weight ratio of 0.1 : 1. The paste was then mixed using a three-roll-mill for one hour. The carbon nanotubes were hollow and had an outer diameter of 15 ± 5 nm and a length of 1 to 5 μιη.
[0050] The Ti02 layers were prepared by screen printing onto a fluorinated tin oxide glass substrate and heated on a hotplate in a nitrogen atmosphere for 30 minutes at 450°C. A sample was also prepared having a magnesium oxide layer coated above the Ti02 layer containing the carbon nanotubes.
[0051] The Ti02 electrode samples were immersed in an ethanolic solution of 120 mmol/L of magnesium acetate (CH3COO")2 Mg2+ in ethanol for 1 minute at 70°C. They were then heated on a hotplate in a nitrogen atmosphere for 30 minutes at 450°C to form a magnesium oxide insulating layer above the Ti02 layer. TABLE I shows the composition of the three Ti02 layers.
TABLE I
CdSe Quantum Dot
Sample Electroconductive Components
Deposition Time
1 Ti02 260 min
Ti02+ multi-walled carbon nanotubes
2 260 min
(MWCNT)
Ti02+ multi-walled carbon nanotubes
3 260 min
(MWCNT) + MgO layer
[0052] The mesoscopic Ti02 film on the conductive substrate electrode was immersed in NH4F (1 M) (ammonium fluoride) solution for about 3 minutes, removed and washed with deionized (DI) water.
[0053] A chemical bath deposition layer was prepared. A solution of potassium nitrilotriacetate/cadmium (NTA/Cd) in a ratio of 1.475 : 1 was prepared using CdS04 with the concentration of Cd2+ at 0.2 M (other soluble cadmium salts such as cadmium chloride (CdCl2) or Cd(N03)2 can be used if desired.) Approximately 2 mL the thus prepared NTA/Cd solution and 2 mL of sodium selenosulphate solution (such Na2SeS03 solution, 0.2 M) in 1 1 mL deionized water (DI water) were placed in a bottle. Thus, 26.7mM Cd2+ solution was obtained. The pH was adjusted to 10.5. The NH4F-treated electro- conductive film was placed in the bottle, and the bottle was placed in a thermostated water bath. The water bath was at a temperature of 30°C for the chemical bath deposition solution to synthesize and deposit CdSe-quantum dots onto the Ti02 films and thereby sensitize it. After a sufficient time for deposition of the CdSe quantum dot (ca. 260 min), the CdSe-quantum dot sensitized Ti02 films were removed from the deposition solution, and washed with deionized water.
[0054] The samples were again immersed into NH4F (1 M) solution three times for approximately 3 minutes each time. The samples were removed from the, NH4F solution, washed with deionized water, and allowed to dry.
[0055] The samples were then dipped in to Zn(Ac)2 (zinc acetate) solution and Na2S (sodium sulfide) solution respectively for 1 min. This procedure was
repeated twice to form a ZnS-shell (zinc sulfide-shell). Washing with deionized water and drying afforded the photovoltaic electrode.
[0056] Counter electrodes (CE) were prepared by sputter depositing a 100 nm conductive platinum film onto a glass substrate. The counter electrode contained two pinholes.
[0057] The electrodes were assembled with a counter electrode as the cathode and filled with electrolyte to provide a quantum dot sensitized solar cell.
[0058] The counter electrode was pressed against the sensitized electrodes coated with quantum dots. A hotmelt gasket of 60 um thickness made of the ionomer Surlyn (DuPont) was placed between the two electrodes. The assembled solar cell was sealed by heating at about 100°C for 10 minutes. The seal controls the electrolyte film thickness and avoids short-circuiting of the cell. The active area of the cells was determined by the area of the hotmelt gasket.
[0059] The electrolyte and sealant were then injected. The electrolyte comprises a solution of a sulfide salt, sulfur, and an ionic conductor in in a mixture of water and an alcohol. The electrolyte solution comprised a solution of 1M Na2S, 0.1M S, 0.2M KC1, in a mixture of pure water and methanol (volume ratio: 1 : 1 ). The electrolyte was introduced via a capillary using two holes in the back of the counter electrode. The holes were sealed with an epoxy.
[0060] The results, shown below in TABLE II demonstrate the increase in short-circuit current density (Jsc) due to the addition of multi walled carbon nanotube one-dimensional conductors to the Ti02 layer. The results, further demonstrate the increase in FF and Rsh due to the thin MgO layer that may inhibit the recombination of electrons and holes at the quantum dot/Ti02-MCNT interface.
TABLE II
Claims
1. A method comprising:
forming a Ti02 patterned layer comprising Ti02 (104) and nanotubes and/or nanowires (106) on a conductive substrate electrode (102, 230);
forming quantum dots (1 10) on the Ti02 patterned layer;
forming a counter electrode (210);
assembling the substrate electrode having the Ti02 layer comprising TiO2 and nanotubes and/or nanowires and quantum dots (235), and counter electrode into a sandwich with a gasket (220) disposed between the surface of the substrate electrode having the Ti02 layer comprising nanotubes and/or nanowires and quantum dots coated thereon and the counter electrode; and
injecting electrolyte and sealant (240) between the substrate electrode and counter electrode to form a solar cell.
2. The method of claim 1 or 2 wherein the conductive substrate electrode and counter electrodes are flexible electrodes.
3. The method of claims 1 or 2 wherein the nanotubes and/or nanowires are hollow carbon nanotubes and have an outer diameter of from about 10 ran to about 50 nm and a length of from about 1 μηι to about 12 μηι.
4. The method of any of claims 1 to 3 wherein an insulating layer (108) is formed between the the Ti02 layer comprising Ti02 and nanotubes and/or nanowires and the quantum dot layer.
5. A solar cell comprising:
a conductive substrate electrode (102, 230) having coated thereon, a patterned electroconductive Ti02 layer comprising Ti02 (104) and nanotubes and/or nanowires (106)
quantum dots (1 10) disposed on the surface of the Ti02 layer;
a counter electrode (210); a gasket (220) disposed between the surface of the substrate electrode having the Ti02 layer comprising nanotubes and/or nanowires and quantum dots (235) and the counter electrode (210); and
an electrolyte and sealer (240) disposed between the substrate electrode and the counter electrode.
6. The solar cell of claim 5 wherein the substrate electrode and counter electrode are formed of a flexible polymer.
7. The solar cell of claim 5 or 6 wherein the nanotubes and/or nanowires are hollow carbon nanotubes and have an outer outer diameter of from about 10 nm to about 50 nm and a length of from about 1 μιη to about 12 μιη.
8. The solar cell of any of claims 5 to 7 comprising an insulating layer (108) between the nanotube or nanowire containing Ti02 layer and the quantum dot layer.
9. An electroconductive layer comprising a conductive substrate electrode (102, 230) having a patterned Ti02 layer comprising Ti02 (104) and nanotubes and/or nanowires (106).
10. The electroconductive layer of claim 9 further comprising an insulating layer (108) positioned above the Ti02 layer comprising Ti02 and nanotubes and/or nanowires.
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CN101924151A (en) * | 2009-06-15 | 2010-12-22 | 霍尼韦尔国际公司 | Nano-structured solar cell |
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KR101294835B1 (en) | 2013-01-02 | 2013-08-07 | 한국기계연구원 | Quantum dots solar cell and method the same |
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