WO2012151270A1 - Boîtiers, systèmes et dispositifs à diodes électroluminescentes (del), et procédés associés - Google Patents
Boîtiers, systèmes et dispositifs à diodes électroluminescentes (del), et procédés associés Download PDFInfo
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- WO2012151270A1 WO2012151270A1 PCT/US2012/036110 US2012036110W WO2012151270A1 WO 2012151270 A1 WO2012151270 A1 WO 2012151270A1 US 2012036110 W US2012036110 W US 2012036110W WO 2012151270 A1 WO2012151270 A1 WO 2012151270A1
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000007704 transition Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 description 45
- 239000004033 plastic Substances 0.000 description 25
- 229920003023 plastic Polymers 0.000 description 25
- 239000000758 substrate Substances 0.000 description 25
- 239000008393 encapsulating agent Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000004954 Polyphthalamide Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 238000001652 electrophoretic deposition Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229920006375 polyphtalamide Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- JPOPEORRMSDUIP-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(2,3,5,6-tetrachlorophenyl)benzene Chemical compound ClC1=CC(Cl)=C(Cl)C(C=2C(=C(Cl)C=C(Cl)C=2Cl)Cl)=C1Cl JPOPEORRMSDUIP-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 239000004416 thermosoftening plastic Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004313 glare Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000742 single-metal deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- -1 GaN Chemical class 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/27—Retrofit light sources for lighting devices with two fittings for each light source, e.g. for substitution of fluorescent tubes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/66—Details of globes or covers forming part of the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/10—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Definitions
- the subject matter disclosed herein relates generally to light emitting diodes (LED) packages and, more particularly, to LED packages having a reflector cavity with angled wall portions for housing LED devices and reflecting light therefrom.
- LED light emitting diodes
- Solid state light sources such as light emitting diodes (LEDs) are widely used in lighting products for commercial and personal use, including, for example, indoor and outdoor lighting applications and backlighting displays for monitors and televisions.
- Incandescent and fluorescent bulbs and tubes have long been the standard in the lighting industry. Incandescent and fluorescent bulbs and tubes can be inefficient in the use of energy, can have short lifespans, and/or can cause disposal problems.
- compact fluorescent lamps (CFL) while having longer life spans than incandescent lamps, have a relatively short lifespan. Due to the chemicals, for example, Mercury, used inside such lamps, these lamps cannot be disposed of after use in the normal course of garbage disposal. Disposal of such CFL lamps for large facilities is expense and can be time consuming due to the procedures that should be followed.
- LEDs can be used in the design of compact, thin, energy-saving products having longer lifetimes than conventional lighting products on the market. Products using LEDs require less power to meet the brightness specifications for a given lighting application, thereby significantly reducing energy consumption and the need for active cooling systems.
- a current trend in packaging LEDs is the use of thinner molded packages for fitting into thin, possibly flat, panel display systems. Thinner packages can, for example, have increased cavity angles to assist in exceeding or maintaining brightness specifications. As cavity angles increase, package material can incompletely mold about package components. For example, package material can incompletely mold about portions of a leadframe. This can lead to gaps, voids, incomplete resin filling, and low adhesion between components within a given package.
- LED light emitting diode
- Multichip LED lamps can be mounted and used in fluorescent fittings, with ballast replaced by driver electronics. Spatial distribution, intensity and spectrum of light output from LED lamps in fluorescent fittings can be comparable to those produced by a fluorescent tube with the same or less power input. LED lamps in such fluorescent fittings, however, can be relatively expensive to manufacture. Smaller LEDs are desirable in such applications. Also, the LEDs can also create heat levels that, if they became excessive and/or the heat is not properly dissipated, can lead to LED and/or circuitry failure.
- Large format LED displays typically comprise a combination of individual LED panels providing image resolutions determined by the distance between adjacent pixels or "pixel pitch.”
- Outdoor displays which are intended for viewing from greater distances, have relatively large pixel pitches and usually comprise discrete LED arrays.
- discrete LED arrays a cluster of individually mounted red, green, and blue LEDs are driven to form what appears to the viewer as a full color pixel.
- indoor screens which require shorter pixel pitches such as 3 mm or less, typically comprise panels carrying red, green, and blue LEDs mounted on a single electronic package such as a surface mount device (SMD) package.
- SMD surface mount device
- Each SMD usually defines a pixel.
- the relatively small SMDs are attached to a driver printed circuit board (PCB) that controls the output of each SMD.
- PCB driver printed circuit board
- each LED package and/or the material used to mount each of the LEDs may have reflective characteristics, which can further decrease color fidelity by creating unwanted light reflection and/or glare.
- SMDs and many other types of electronic packages whether containing integrated circuits or discrete components such as diodes or power transistors, dissipate sufficient heat to require thermal management. Also, excessive heat may cause LEDs failures.
- One of the considerations for designing an LED system is effective thermal management.
- One of the objectives of effective thermal management in the design of electronic packaging is to maintain the operating temperature of the LEDs and other active circuit components at an appropriately low level to prevent premature component failure.
- Various cooling strategies including conduction heat transfer are in common use.
- One conventional way of implementing conduction heat transfer for dissipating heat in an electronic package is to allow the heat to conduct away along the leads of the device. However, the leads often do not have sufficient mass or exposed surface area to provide effective heat dissipation. For example, high intensity LEDs that emit light principally in the visible part of the electromagnetic spectrum can generate a significant amount of heat that is difficult to dissipate using such conventional techniques.
- LED packages, systems, devices and methods are provided. It is, therefore, an object of the present disclosure herein to provide novel LED packages, systems and methods as described for example in further detail hereinbelow.
- FIG. 1 is a top perspective view illustrating an embodiment of a light emitting diode (LED) package according to the subject matter disclosed herein;
- LED light emitting diode
- Figure 2 is a top plan view illustrating the embodiment of the LED package according to Figure 1 ;
- Figure 3A is a cross-sectional view illustrating the embodiment of the LED package taken along line 3A-3A in Figure 2;
- Figure 3B is a cross-sectional view illustrating the embodiment of the LED package taken along line 3B-3B in Figure 2;
- Figure 4 is a bottom perspective view illustrating the embodiment of the LED package according to Figure 1 ;
- Figure 5 is a perspective view illustrating a lead frame in accordance with one embodiment that may be used in an LED package according to the subject matter herein;
- Figure 6 is a top plan view illustrating another embodiment of an LED package according to the subject matter disclosed herein;
- Figures 7A and 7B are cross-sectional side views illustrating a portion of an embodiment of a LED package according to the subject matter herein;
- Figures 8A-8C are cross-sectional schematic side views illustrating portions of embodiments of LED packages according to the subject matter herein;
- Figure 9 is a top plan view illustrating a further embodiment of an LED package according to the subject matter herein;
- Figure 10 is a top plan view illustrating an embodiment of a display screen using embodiments of LED packages according to the subject matter herein;
- Figure 11 is a partial cross-sectional side view illustrating an embodiment of a lighting device using embodiments of LED packages according to the subject matter herein;
- Figure 12 is a top perspective view illustrating another embodiment of a lighting device using embodiments of LED packages according to the subject matter herein.
- references to a structure being formed “on” or “above” another structure or portion contemplates that additional structure, portion, or both may intervene. References to a structure or a portion being formed “on” another structure or portion without an intervening structure or portion may be described herein as being formed “directly on” the structure or portion.
- relative terms such as “on”, “above”, “upper”, “top”, “lower”, or “bottom” are used herein to describe one structure's or portion's relationship to another structure or portion as illustrated in the figures. It will be understood that relative terms such as “on”, “above”, “upper”, “top”, “lower” or “bottom” are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, structure or portion described as “above” other structures or portions would now be oriented “below” the other structures or portions. Likewise, if devices in the figures are rotated along an axis, structure or portion described as “above”, other structures or portions would now be oriented “next to” or “left of the other structures or portions. Like numbers refer to like elements throughout.
- Light emitting devices may comprise group lll-V nitride (e.g., gallium nitride) based light emitting diodes (LEDs) or lasers fabricated on a growth substrate, for example, silicon carbide substrate, such as those devices manufactured and sold by Cree, Inc. of Durham, North Carolina.
- silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham, North Carolina.
- Silicon carbide (SiC) substrates/layers discussed herein may be 4H polytype silicon carbide substrates/layers.
- Other silicon carbide candidate polytypes, such as 3C, 6H, and 15R polytypes, however, may be used.
- SiC substrates are available from Cree, Inc., of Durham, N.C., the assignee of the present subject matter, and the methods for producing such substrates are set forth in the scientific literature as well as in a number of commonly assigned U.S. patents, including but not limited to U.S. Patent No. Re. 34,861 ; U.S. Patent No. 4,946,547; and U.S. Patent No. 5,200,022, the disclosures of which are incorporated by reference herein in their entireties.
- Group III nitride refers to those semiconducting compounds formed between nitrogen and one or more elements in Group III of the periodic table, usually aluminum (Al), gallium (Ga), and indium (In).
- the term also refers to binary, ternary, and quaternary compounds such as GaN, AIGaN and AllnGaN.
- the Group III elements can combine with nitrogen to form binary (e.g., GaN), ternary (e.g., AIGaN), and quaternary (e.g., AllnGaN) compounds. These compounds may have empirical formulas in which one mole of nitrogen is combined with a total of one mole of the Group III elements.
- formulas such as AlxGa1-xN where 1>x>0 are often used to describe these compounds.
- Techniques for epitaxial growth of Group III nitrides have become reasonably well developed and reported in the appropriate scientific literature, and in commonly assigned U.S. Patent No. 5,210,051 , U.S. Patent No. 5,393,993, and U.S. Patent No. 5,523,589, the disclosures of which are hereby incorporated by reference herein in their entireties.
- LEDs disclosed herein comprise a growth substrate
- the crystalline epitaxial growth substrate on which the epitaxial layers comprising an LED are grown may be removed, and the freestanding epitaxial layers may be mounted on a substitute carrier substrate or submount which may have better thermal, electrical, structural and/or optical characteristics than the original substrate.
- the subject matter described herein is not limited to structures having crystalline epitaxial growth substrates and may be used in connection with structures in which the epitaxial layers have been removed from their original growth substrates and bonded to substitute carrier substrates.
- Group III nitride based LEDs may be fabricated on growth substrates (such as a silicon carbide substrates) to provide horizontal devices (with both electrical contacts on a same side of the LED) or vertical devices (with electrical contacts on opposite sides of the LED).
- the growth substrate may be maintained on the LED after fabrication or removed (e.g., by etching, grinding, polishing, etc.). The growth substrate may be removed, for example, to reduce a thickness of the resulting LED and/or to reduce a forward voltage through a vertical LED.
- a horizontal device may be flip chip bonded (e.g., using solder) to a carrier substrate or printed circuit board (PCB), or wire bonded.
- a vertical device (without or without the growth substrate) may have a first terminal solder bonded to a carrier substrate, mounting pad, or PCB and a second terminal wire bonded to the carrier substrate, electrical element, or PCB. Examples of vertical and horizontal LED chip structures are discussed by way of example in U.S. Publication No. 2008/0258130 to Bergmann et al. and in U.S. Publication No. 2006/0186418 to Edmond et al., the disclosures of which are hereby incorporated by reference herein in their entireties.
- Solid state light LEDs may be used individually or in combinations, optionally together with one or more luminescent materials (e.g., phosphors, scintillators, lumiphoric inks) and/or filters, to generate light of desired perceived colors (including combinations of colors that may be perceived as white).
- luminescent materials e.g., phosphors, scintillators, lumiphoric inks
- filters to generate light of desired perceived colors (including combinations of colors that may be perceived as white).
- luminescent (also called 'lumiphoric') materials in LED devices may be accomplished by adding such materials to encapsulants, adding such materials to lenses, or by direct coating onto LEDs. Other materials, such as dispersers and/or index matching materials may be disposed in such encapsulants.
- the LED can be coated, at least partially, with one or more phosphors with the phosphors absorbing at least a portion of the LED light and emitting a different wavelength of light such that the LED emits a combination of light from the LED and the phosphor. In one embodiment, the LED emits a white light combination of LED and phosphor light.
- the LED can be coated and fabricated using many different methods, with one suitable method being described in U.S. Patent Application Serial Nos. 11/656,759 and 11/899,790, both entitled "Wafer Level Phosphor Coating Method and Devices Fabricated Utilizing Method", and both of which are incorporated herein by reference.
- LEDs can be coated using other methods such an electrophoretic deposition (EPD), with a suitable EPD method described in U.S. patent application Ser. No. 11/473,089 entitled “Close Loop Electrophoretic Deposition of Semiconductor Devices", which is also incorporated herein by reference. It is understood that LED devices and methods according to the present subject matter can also have multiple LEDs of different colors, one or more of which may be white emitting.
- EPD electrophoretic deposition
- FIGS 1-8C depict a light-emitting diode (LED) package, generally designated 10 that can be, for example, a surface-mount device (SMD) and parts thereof according to specific, exemplary embodiments for use in LED displays such as indoor and/or outdoor LED screens.
- LED package 10 can comprise a casing 12 that forms a body 13 for carrying a lead frame 14, an embodiment of which is described in more detail below and to which one or more LEDs 40 can be electrically connected.
- one or more LEDs 40 can be electrically connected by electrical connections such as wire leads 40A, 40B (see, for example, Figure 2) to lead frame 14.
- Other suitable electrical connections can also be used to electrically connect one or more LEDs 40 to lead frame 14 as are known within the art.
- Casing 12 can be at least generally rectangular, including opposed, first and second main (or upper and lower) surfaces 16 and 18, respectively, opposing respective side surfaces 20 and 22, and end surfaces 24 and 26. Casing 12 and lead frame 14 can help define the outer dimension of LED package 10.
- distance T (as seen in Figure 3B) between upper surface 16 of casing 12, or body 12, and lower surfaces 90, 92 of lead frame 14, or the package profile height or thickness can be less than about, or approximately, 2.0 mm.
- distance T between upper surface 16 and and a lower surface 92 of lead frame 14 can be approximately 1.70 mm to approximately 1.95 mm.
- distance T between upper and lower main surfaces 16 and 18 can be approximately 1.90 mm.
- Distance W between side surfaces 20 and 22 can be less than approximately 3.0 mm.
- distance W between side surfaces 20 and 22 can be approximately 2.7 mm to approximately 3.0 mm.
- distance W between side surfaces 20 and 22 can be approximately 2.8 mm.
- Distance L between end surfaces 24 and 26 can be less than approximately 3.5 mm.
- distance L between end surfaces 24 and 26 also can range between approximately 3.1 mm to approximately 3.5 mm.
- distance L between end surfaces 24 and 26 can be approximately 3.2 mm.
- Casing 12 can be fabricated from materials that are both electrically insulating and thermally conductive.
- the casing can be a thermoplastic polycondensate.
- a thermoplastic polycondensate that can be used is polyphthalamide (PPA).
- PPA polyphthalamide
- casing 12 can be formed of black PPA or white PPA. It has been found that the use of black material in image generation LED packages, such as with LED packages employed in video displays, improves contrast.
- Other casing materials that can be used can comprise ceramics, resins, epoxies, and glass.
- casing 12 can comprise a white plastic material, more specifically, a molded white plastic material.
- casing 12 can comprise any suitable moldable material.
- casing 12 can comprise a plastic material having quantitative and qualitative properties optimized for solid state device package applications.
- the plastic material can in one aspect comprise, for example, any suitable organic polymer, such as for example a heat resistant resin such as a polyamide resin.
- the plastic material can be filled with glass or mineral material for strength and something like titanium dioxide for reflectivity.
- the plastic material can in one aspect be a liquid crystal polymer (LCP).
- An optimized plastic material in accordance herewith can comprise a glass transition temperature (T g ) that can, for example, be greater than approximately 110 degrees Celsius (°C).
- the glass transition temperature (T g ) can, for example, be greater than approximately 115°C or greater than approximately 120°C. In one aspect, the glass transition temperature (T g ) can be greater than approximately 123°C.
- the optimized plastic material in accordance herewith can also comprise a melting point temperature (T m ) that can be less than approximately 315°C.
- the melting point temperature (T m ) can, for example, be less than approximately 310°C.
- the melting point temperature (T m ) can, for example, be less than approximately 300°C.
- the melting point temperature (T m ) can be approximately 307°C.
- a plastic material with a T g of approximately 123°C is higher than many plastics conventionally used and can allow the package to have increased stability at elevated temperatures.
- a plastic material with a lower T m of approximately 307°C can allow better flowability because the melting temperature is lower than that of plastics conventionally used and the plastic body is easier to mold.
- the plastic selected for casing 12 can also comprise optimized qualitative properties.
- a white plastic material can be chosen which exhibits a better reflectivity retention value while also exhibiting fewer tendencies to discolor, degrade, and/or yellow when subjected to heat and/or light exposure.
- the reflectivity of the plastic material can in one aspect be greater than 90% for example, and that level or another level of high reflectivity can be maintained over time, heat, moisture, and blue light exposure.
- the plastic material for casing 12 can comprise an elongation value (mechanical property) of approximately 1.4% or greater, or an elongation value of 1.6% or greater. In one aspect, the elongation value can be approximately 1.5% or greater. Also as a mechanical property, the flexural strength of the plastic material of casing 12 as measured by ASTM D790 standards can be approximately 150 MPa or lower, approximately 130 MPa or lower, or approximately 120 MPa or lower. In one aspect, the flexural strength of the plastic material of casing 12 can be approximately 140 MPa or lower as measured by ASTM D790 standards. Also as a mechanical property, the flexural modulus of the plastic material of casing 12 can be approximately 6.9 GPa or lower, or approximately 6.5 GPa or lower.
- the flexural modulus of the plastic material of casing 12 can be approximately 6.0 GPa or lower.
- the tensile strength of the plastic material of casing 12 can be approximately 100 MPa or lower as measured by ASTM D638 standards, approximately 90 MPa or lower, or approximately 80 MPa or lower. In one aspect, the tensile strength of the plastic material of casing 12 can be less than approximately 75 MPa as measured by ASTM D638 standards.
- Casing 12 can further define a reflector recess or cavity 28 that can be disposed at least partially within casing 12.
- cavity 28 can extend from upper surface 16 into the body of casing 12.
- the effectiveness of the reflectivity of reflector cavity 28 can be enhanced by the tapering of reflector cavity 28 inwardly toward the interior of the casing.
- reflector cavity 28 can have angled wall portions 30, 32, 34, 36 that can form at least generally a rectangular shape.
- angled side wall portions 30, 32 extend approximately parallel to each other, while angled end wall portions 34, 36 extend approximately parallel to each other with angled side wall portions 30, 32 being approximately perpendicular to angled end wall portions 34, 36.
- Angled side wall portions 30, 32 can be angled at a different angle from angled end wall portions 34, 36 as described further below.
- a transition wall portion 39A, 39B, 39C, 39D can reside between angled side wall portions 30, 32 and angled end wall portions 34, 36 that provide a transitioning of respective angles of the respective wall portions 30, 32, 34, 36.
- angled side wall portions 30, 32 can be longer than angled end wall portions 34, 36.
- the size of the cavity is increased compared to, for example, circular shaped cavities.
- the ratio of the area of the cavity floor over the area of the main surface can be at least 35%. In some embodiments, it is greater than 40%. In still other embodiments, the ratio is greater than 50%.
- Reflector cavity 28 can optionally be coated with a reflecting substance and/or filled to a desired level with an encapsulant E (as shown, for example, in dotted lines in Figure 1).
- the dotted line illustrates a first level to which encapsulant E can be filled within reflector cavity 28. That is, encapsulant E can be filled to a level substantially flush with upper main surface 16, or in the alternative it may be filled to any suitable level within reflector cavity 28 and can comprise a concave or convex surface and even exceed or extend above upper main surface 16.
- Encapsulant E can protect and positionally stabilize lead frame 14 and the one or more LEDs 40 carried thereby.
- encapsulant E may cover the one or more LEDs 40, the portions of lead frame 14 exposed through reflector cavity 28, and the LEDs' electrical connections. Encapsulant E can be selected to have predetermined optical properties so as to enhance the projection of light from the LEDs.
- Encapsulant E can comprise any suitable material known in the art.
- encapsulant E can be formed from a resin, an epoxy, a thermoplastic polycondensate, glass, and/or other suitable materials or combinations of materials.
- materials can be added to encapsulant E to enhance the emission, absorption and/or dispersion of light to and/or from the LEDs.
- encapsulant E can optionally comprise a phosphor or a lumiphor to interact with light emitted by one or more LEDs 40 and responsively emit light of a different wavelength spectrum.
- a reflective insert or ring can be positioned and secured along at least a portion of angled wall portions 30, 32, 34, 36 of reflector cavity 28.
- the reflective insert or ring can be integral with casing 12 and may be made from the same material as casing 12.
- the total volume within cavity 28 can be larger than other similar LED packages, such as for instance those where the cavity or recess is circular.
- angled side wall portions 30, 32 can have a length WAS and angled end wall portions 34, 36 can have a length WAE- Length W A E of angled end wall portions 34, 36 can be greater than length W AE of angled side wall portions 30, 32.
- length W A E of angled end wall portions 34, 36 greater than length W A E of angled side wall portions 30, 32, the angle of angled side wall portions 30, 32 (and between angled side wall portions 30, 32) can be greater than the angle of angled end wall portions 34, 36 (and between angled end wall portions 34, 36) as described further below.
- FIG. 6 illustrates a top view of LED package 10.
- LED package 10 is shown with one LED 40 schematically illustrated therein, but there can be one or more LEDs 40.
- LED package 10 is generic and included herein to illustrate possible further dimensions.
- LED 40 can comprise a width 1 and a length 2 which can be any suitable dimensions.
- LED package 10 illustrates various dimensions of the package itself. For example, typical dimensions, for instance, lengths, widths, thicknesses, and areas can be such as those illustrated in Figure 6 and disclosed in Table 1 below.
- the overall package area (L1 x W1) can be approximately 9.4 mm 2 to approximately 10 mm 2 .
- Any shape, dimension, and structure of LED chip such as LED 40 can be used in LED package 10. As described earlier, more than one LED 40 can be disposed in LED package 10.
- LED 40 can have various lengths and widths. Any suitable dimension of LED 40 can be used.
- Distances L5 and L6 can be large enough to create a lip to hold encapsulant in cavity 28. Thus, distances L5 and L6 can be minimized to allow holding of encapsulant, while creating larger angled wall portions 30, 32, 34, 36. Thereby, reflective surfaces of reflector cavity 28 can be maximized and the wasted space on upper surface 24 can be minimized.
- Such an arrangement can result in at least about a 10% bright output of illumination.
- the opening of reflector cavity 28 at upper surface 16 can be a larger rectangular shape and the opening of reflector cavity 28 at a cavity floor 70 (see Figures 7A and 7B) can be a smaller rectangular shape.
- the larger rectangular shape of the opening of reflector cavity 28 at upper surface 16 may be or may not be proportional to the smaller rectangular shape of the opening of reflector cavity 28 at cavity floor 70.
- the larger rectangular shape of the opening at upper surface 16 can be defined by longer side wall portions and shorter end wall portions, while the smaller rectangular shape at cavity floor 70 can be a square with the side wall portions and end wall portions that define that opening being substantially the same length.
- Lead frame 14 can comprise an electrically conductive chip carrier generally designated 50 and first, second, and third electrically conductive connection parts, respectively generally designated 52, 54, and 56, separate from the electrically conductive chip carrier. Electrically conductive chip carrier 50 and first, second, and third electrically conductive connection parts 52, 54, and 56 can form leads 60, 62, 64, and 66. Electrically conductive chip carrier 50 can have an upper surface 80 including a connection pad 68. Connection pad 68 can be exposed from casing 12. First electrically conductive connection part 52 can be at least partially surrounded by electrically conductive chip carrier 50.
- first, second and third electrically conductive connection parts can have an upper surface, a lower surface or terminal, and a connection pad on the upper surface.
- first electrically conductive connection part 52 can have an upper surface 82, a lower surface 92, and a connection pad 72 on upper surface 82.
- Second electrically conductive connection part 54 can have an upper surface 84, a lower surface 94, and a connection pad 74 on upper surface 84.
- Third electrically conductive connection part 56 can have an upper surface 86, a lower surface 96, and a connection pad 76 on upper surface 86.
- first, second, and third electrically conductive connection parts 52, 54, and 56 can each have connection pads 72, 74, 76 respectively.
- connection pads 72, 74, 76 can have at least a portion exposed from casing 12 as well as shown in Figures 1 and 2.
- a surface area of upper surface 82 of first electrically conductive connection part 52 can be less than an upper surface area of upper surface 84 or 86 of second and third electrically conductive connection parts 54 and 56.
- Connection pad 68 can have opposing sides. One of the opposing sides, which can be close to connection pads 74 and 76, can be at least as long as end wall portions 34, 36 of reflector cavity 28 as shown in Figures 1 and 2. The other side, which is close to connection pad 72, is greater than approximately one half of the length of the adjacent end wall portion 34 of reflector cavity 28.
- One or more LEDs are disposed on upper surface 80 of electrically conductive chip carrier 50. For example, in Figures 1 and 2, LED 40 can be disposed on connection pad 68 of upper surface 80.
- solder pads are included on the bottom of the end portions such that no solder is visible when viewing each individual LED package from the top. This can be advantageous as it helps to prevent glare and improve contrast, particularly during daylight viewing.
- reflector cavity 28 can extend into the casing interior a sufficient depth to expose the connection pads 60 and 72, 74, 76.
- electrically conductive chip carrier 50 and first, second, and third electrically conductive connection parts 52, 54, and 56 that form leads 60, 62, 64, and 66, respectively, may be separated by gaps 98 among connection pads 68 and connection pads 72, 74, 76, to electrically isolate connection parts 52, 54, and 56 from each other and from electrically conductive chip carrier 50.
- gaps 98 between connection pads 68 and connection pads 72, 74, 76 can be filled with casing material to form body portions 12A, 12B that isolate connection pads 68 and connection pads 72, 74, 76 from each other.
- enhanced heat dissipation can be realized by a surface area of upper surface 82 of first electrically conductive connection part 52 that is minimized to only have enough space to hold a connection pad 72.
- the surface area of upper surface 82 can be less than a surface area of either upper surface 84 or 86 of second and third electrically conductive connection parts 54 and 56.
- Electrically conductive connection parts 52, 54, and 56 can comprise enlarged electrical connection pads 72, 74, 76, respectively, positioned around a central region 58 (see Figures 1 and 2) adjacent to, but spaced apart from, the component carrying upper surface 80 of chip carrier 50.
- gaps 98 can separate connection parts 52, 54, and 56 from each other and from electrically conductive chip carrier 50.
- leads 60, 62, 64, and 66 can be bent to extend outside of and along their respective end surfaces 24 and 26 of the casing, then bent again so that lower surfaces 90, 92, 94, and 96 of leads 60, 62, 64, and 66 extend along lower surface 26 of casing 12.
- Lower surfaces 90, 92, 94, and 96 may also be referred to as pin pads.
- the outwardly facing surfaces of lower surfaces 90, 92, 94, and 96 of leads 60, 62, 64, and 66 and the bottom surface of a thermal conductive body can be substantially flush to facilitate connection to an underlying substrate.
- Lower surfaces 90, 92, 94, and 96 of the leads are electrically connected or bonded to traces or pads on the substrate using any of a number of well-known connection techniques, including soldering.
- Electrically conductive chip carrier 50 and electrically conductive connection parts 52, 54, 56 can be made from an electrically conductive metal or metal alloy, such as copper, a copper alloy, other suitable low resistivity, corrosion resistant materials, or combinations of these materials. Because all the LED chips are disposed on electrically conductive chip carrier 50, a large surface area of upper surface 80 may help heat dissipation.
- reflector cavity 28 can be bounded from below by a floor 70 (including portions of connection pads 68, 72, 74, 76, and casing or body portions 12A, 12B), and bounded along edges by angled side wall portions 30, 32, angled end wall portions 34, 36, and transition wall portions 39A-39D.
- a transition wall portion 39A-39D is disposed between each respective angled side wall portions 30, 32 and angled end wall portions 34, 36.
- Each side wall portion 30, 32 and each end wall portion 34, 36 can comprise a substantially straight upper edge, and each transition wall portion 39A-39D can comprise a curved or segmented upper edge transitioning from the upper edge of a side wall portion 30, 32 to the upper edge of end wall portion 34, 36.
- Figures 7A and 7B illustrate schematic drawings of cavity angles that LED packages, such as LED package 10 and other packages described herein, can have.
- Points P in Figures 7A and 7B can comprise an intersection area of where one or more cavity, or angled, wall portions 30, 32, 34, and/or 36 extends towards and intersects cavity floor 70.
- one or more cavities can comprise a cavity angle measured between walls of reflector cavity 28.
- cavity angles of packages described herein can comprise 90° or more.
- cavity angles of packages described herein can comprise 90° or less.
- Figure 7A illustrates a portion of cavity floor 70 disposed between exterior lateral end walls 24 and 26. That is, Figure 7A illustrates the longer measurement L4 of cavity floor.
- the cavity angle ⁇ between the cavity end wall portions 34 and 36 of the reflector cavity 28 can be approximately 72°.
- cavity angle ⁇ between the cavity end wall portions 34, 36 of the reflector cavity 28 (as measured between the end wall portions) can be at least approximately 70° or more depending on the thickness T (see Figure 3B) of the LED package. Thinner, optimized packages with thinner dimensions can comprise larger cavity angles which can allow the reflection level within the package to maintain or exceed the amount of reflected light. Such reflected light can maintain or exceed, for example, current brightness standards for similar packages.
- the area beneath the point formed by the cavity wall and cavity floor can become so small that viscous material cannot mold therein, forming voids.
- the packages described herein can reduce and/or eliminate the voids by providing larger areas below the point where the cavity wall meets the cavity floor, and/or displacing electrical leads at least a distance away from the point, or edge of the cavity floor.
- Figure 7B illustrates a portion of cavity floor 70 disposed between exterior lateral side walls 20 and 22. That is, Figure 7B illustrates the shorter width measurement W3 of cavity floor 70.
- the cavity angle a between cavity, or angled, side wall portions 30, 32 of reflector cavity 28 (as measured between the side wall portions) can be approximately 50° or more, for example, approximately 51 °.
- the cavity angle a between cavity side wall portions 30, 32 of reflector cavity 28 can be at least approximately 45° or more depending on thickness T (see Figure 3B) of the LED package.
- thinner, optimized packages with thinner dimensions can comprise larger cavity angles which can allow the reflection level within the package to maintain or exceed the amount of reflected light, such that the reflected light can maintain or exceed current brightness standards.
- Each transition wall portion 39A-39D can be inclined at a larger average angle, relative to a plane perpendicular to the floor of the reflector cavity, than each side wall portion 30, 32 and each end wall portion 34, 36.
- Figure 8A provides a simplified schematic cross-sectional view of a body portion, illustrating an angle ⁇ of a side wall portion thereof relative to a plane perpendicular to the floor of the body cavity
- Figure 8B provides a simplified schematic cross-sectional view of a body portion, illustrating an angle ⁇ of an end wall portion thereof relative to a plane perpendicular to the floor of the body cavity
- Figure 8C provides a simplified schematic cross-sectional view of a body portion, illustrating an angle p of a transition wall portion relative to a plane perpendicular to the floor of the body cavity.
- each side wall portion can be inclined at an angle ⁇ of at least approximately 25° or greater. In further embodiments, angle ⁇ may be at least approximately 30°, or at least approximately 35°. In some embodiments, each side wall portion can be inclined at an angle ⁇ of at least approximately 30°. In further embodiments, angle ⁇ can be at least approximately 35°, or at least approximately 40°. In some embodiments, each transition wall portion is inclined at an angle p of at least approximately 35°. In further embodiments, angle p can be at least approximately 40°, or at least approximately 45°. Such angles of side wall portions 30, 32, end wall portions 34, 36, and transition wall portions 39A-39D are greater than typically employed in solid state emitter devices.
- any one or more (or all) of these wall portions can be characterized by a segmented and/or curved cross-section, that is, with the wall extending from the floor to the upper edge of the package being non-linear along at least a portion thereof. If such walls are curved or segmented, then the inclination angles mentioned above can correspond to an average angle of a curved or segmented wall, or an angle between endpoints of such a wall.
- side wall portions 30, 32/end wall portions 34, 36 and transition wall portions 39A-39D of alternating angles enables frontal area of reflector cavity 28 to be maximized relative to shaped upper surface 16, while providing desirably diffused output beam characteristics, particularly when multiple emitters, such as multiple LEDs, are disposed in cavity 28.
- an LED package 110 can comprises a casing 112 carrying a lead frame 114 that can be as described above.
- LED package 110 can further comprise one or more LEDs.
- LED package 110 comprises three LEDs 44, 46, 48 that can emit red, green and blue colors, respectively, so that when appropriately energized the LEDs produce in combination a substantially full range of colors.
- the LED chips can have a square-like size or rectangular size.
- the square-like LED chip can have a profile height less than bout 0.11 mm, or in the range of approximately 0.09 mm to approximately 0.11 mm, or less than approximately 0.1 mm, or in the range of approximately 0.08 to approximately 0.10 mm.
- the square-like LED chip can have a profile width of less than approximately 0.32 mm, or in the range of 0.265 mm to 0.315 mm.
- the square-like LED chip can have a profile width of less than approximately 0.38 mm, or in the range of approximately 0.33 mm to approximately 0.38 mm.
- the rectangular LED chip can have a profile height of less than approximately 0.13 mm, or in the range of approximately 0.10 mm to approximately 0.13 mm.
- the rectangular LED chip can have a profile width of less than approximately 0.28 mm, or in the range of approximately 0.20 mm to approximately 0.28 mm.
- the rectangular LED chip can have a profile width of less than approximately 0.36 mm, or in the range of approximately 0.28 mm to approximately 0.36 mm.
- lead frame 114 can comprise electrically conductive chip carrier 50 and electrically conductive connection parts 52, 54, and 56 that provide connection pads 72, 74, and 76. Electrically conductive chip carrier 50 and electrically conductive connection parts 52, 54, and 56 form leads 60, 62, 64, and 66. Electrically conductive chip carrier 50 can have an upper surface 80 comprising a connection pad 68. Connection pad 68 can be exposed from casing 112. Connection pad 68 has opposing sides. One of the opposing sides, which is close to connection pads 74 and 76, can be at least as long as a side of cavity 128. The other side of connection pad 68, which is close to connection pad 72, can be greater than approximately 1/2 of the length of the adjacent side of cavity 128.
- a plurality of LEDs can be disposed on upper surface 80 of the electrically conductive chip carrier 50.
- three LEDs 44, 46, and 48 are disposed on connection pad 68 of upper surface 80.
- the three LEDs usually emit lights in different color.
- LED 44 can emit red light
- LED 46 can emit green light
- LED 48 can emit blue light.
- Two or more of the LEDs may emit the same color, including white.
- LED 44 and LED 46 can both emit red light.
- Each LED has a first electrical terminal and a second electrical terminal.
- the first electrical terminal can be called an anode.
- first LED 44 can have an anode electrically coupled to connection pad 74 of electrically conductive connection part 54.
- Second LED 46 can have an anode electrically coupled to connection pad 76 of electrically conductive connection part 56.
- Third LED 48 can have an anode electrically coupled to connection pad 72 of electrically conductive connection part 52.
- chip carrier 50 also works as a heat sink to dissipate heat from the plurality of LEDs.
- the dimensions of the blue and green LEDs can be a width of approximately 205 microns to approximately 275 microns and a length of approximately 285 microns to approximately 355 microns. In one embodiment, the blue and green LEDs can have a width of approximately 240 microns and a length of approximately 320 microns. The thickness of the blue and green LEDs can vary from approximately 100 microns to approximately 130 microns, for example, approximately 115 microns.
- the red LEDs can have various sizes.
- the red LEDs can have a width and length of approximately 355 microns, but the widths and lengths can range in size from approximately 330 microns to approximately 380 microns.
- the thicknesses of the red LEDs in such embodiments can be approximately 70 microns to approximately 125 microns, for example, approximately 100 microns.
- the red LEDs have bonding pads ranging in size from approximately 90 microns to approximately 110 microns, for example, approximately 100 microns.
- the red LEDs can have a width and length of approximately 290 microns, but the widths and lengths can range from approximately 265 microns to approximately 315 microns.
- the thicknesses of the red LEDs in such embodiments can be approximately 100 microns, but the thicknesses can range from approximately 85 microns to approximately 115 microns.
- the red LEDs can have bonding pads ranging in size from approximately 80 microns to approximately 100 microns, for example, approximately 90 microns.
- LED display screen 200 can be, for example, an indoor or an outdoor screen comprising, in general terms, a driver printed circuit board (PCB) 202 carrying a large number of LED packages 204 arranged in rows and columns, each LED package is attached or is integral to the other LED packages 204 to form a single screen.
- LED packages 204 can be electrically connected to traces or pads on PCB 202.
- PCB 202 can be connected to an appropriate electrical signal processing and driver circuitry.
- LED packages 204 can comprise, for example, LED packages 10, 110 as described above.
- Each LED package 204 can comprise a lead frame with a casing disposed on at least a portion of the lead frame.
- the casing can have a reflector cavity therein that forms a rectangular shaped opening around one or more LEDs 206 on the lead frame with the reflector cavity having angled end and side wall portions surrounding the one or more LEDs.
- the angle of each end wall portion of the reflector cavity can be at a different angle from the angle of each side wall portion.
- each LED package 204 can have multiple LEDs 206 therein.
- each of the LED packages 204 can carry a vertically oriented, linear array of red, green and blue LEDs 206 as described above. Such a linear orientation of the LEDs can improve color fidelity over a wide range of viewing angles.
- a single LED can be provided in each LED package as with package 10 from Figures 1-5.
- Each LED package 204 can define a pixel 210.
- Each pixel 210 of the display can have a size of approximately 3.0 mm or less by approximately 3.5 mm or less.
- LED packages 204 can comprise devices such as those described above and illustrated in Figures 1-9. As stated above, LED packages 204 can be electrically connected to traces or pads on PCB 202 that are interconnected to provide appropriate electrical signal processing circuitry and driver circuitry (not shown). Through-holes 208 can also be provided to allow for better and shorter contact for the plastic casing body to the PCB. Through-holes 208 also allow for improved thermal dissipation.
- LEDs for use in backlighting or other panel display systems can comprise an arrangement or planar arrays of red, green, and blue LED devices configured to emit light that appears as a pixel of white light in operation. Sizes of red, green, and blue LEDs can be selected to meet a desired brightness and/or intensity balancing level. Any configuration of the red, green, and blue LEDs can be used. LED packages and/or LEDs utilizing metal-to-metal die attach methods as described herein can be used in backlighting systems and any suitable display panel system 200.
- LED packages and/or LEDs used in backlighting and display panel systems can offer light output of up to 122 lumens at 300 mA in cool white (CW), and up to 100 lumens at 300 mA in warm white (WW) color points.
- LED packages and/or LEDs disclosed herein can be used in lighting fixtures comprising fixtures used in display panel systems offering a minimum CRI for CW color points of 65 CRI.
- LED packages and/or LEDs disclosed herein can be used in lighting fixtures comprising fixtures used in display panel systems offering a minimum CRI for CW color points of 75 CRI which corresponds to a range of 5,000 K to 8,300 K CCT.
- LED packages and/or LEDs disclosed herein for use in display panel systems can also offer, for example, a minimum CRI for CW color points of 80 CRI which corresponds to a range of 2,600K to 3,700K CCT.
- Such LED packages and/or LEDs can be used for both standard and high voltage configurations.
- a lighting device 300 can comprise a tube 302 and LED packages 310 similar to LED packages 10, 110 described above with reference to Figures 1-4 that can be placed or attached in a single row.
- LED packages 310 can be integral with each other or can be separately attached to a substrate.
- LED packages 310 can be properly attached to a driver PCB 306 as shown Figure 1 1.
- PCB 306 can be connected to appropriate electrical signal processing and driver circuitry such as an electrical connector 308.
- Tube 302 can be generally transparent or translucent.
- a portion of tube 302, which LED packages 310 face, can be generally transparent or translucent, while a portion of tube 302 that PCB 304 faces can be opaque.
- the row or strip LED packages 310 can be inserted into a tube 302 that can be bigger, smaller or comparable to the dimensions of a fluorescent lighting tube, or CFL lamp, in a manner known in the art as the LED packages herein can replace fluorescent tube lights.
- Arrays of LED packages can also be used in the lighting devices.
- Backlighting devices can be made in strips on the side (one row, no columns), or an array.
- An array of LED packages can be used in backlighting devices and other lighting devices, for example and without limitation, as shown in Figure 12.
- Figure 12 illustrates portions of a front side 330A and back side 330B of a lighting device 330.
- Such a lighting device 330 can be used in lighting fixtures that traditionally used CFL lamps, or fluorescent tubes.
- lighting device 330 can be used in place of CFL lamps.
- lighting device 330 can comprise a tube 332 having a front side 332A and a back side 332B. Lighting device 330 can also comprise a PCB 334 disposed within tube 332 and an electrical connector 336 on either end of tube 332. Lighting device 330 can further comprise LED packages 340 similar to LED packages 10, 110 described above with reference to Figures 1-4 that can be electrically and operatively attached to a driver PCB 334 in an array 342. As shown in Figure 12, array 342 can be in a checkerboard pattern. Such a checkerboard pattern array 342 can facilitate the creation of uniform lighting by lighting device 330.
- array 342 of LED packages 340 can be attached so that they face front side 332A of tube 332.
- Front side 332A can permit light generated by array 342 of LED packages 340 to shine therethrough.
- front side 332A can be generally transparent or translucent.
- back side 332A of tube 332 can face the lighting fixture while front side 332A of tube 332 faces outward so that light generated by array 342 of LED packages 340 shines outward into the area to be lighted.
- back side 332B of tube 332 can be opaque.
- Tube 332 can be a single unitary tube so that front side 332A and back side 332B of tube 332 are a single integral piece.
- back side 332B of tube 332 can be painted or coated with a generally opaque material.
- front side 332A of tube 332 and back side 332A of tube 332 can comprise two different components that can be fitted together to form tube 332.
- back side 332A of tube 332 can be generally transparent or translucent.
- a second PCB with LED packages such as an array of LED packages, can be disposed in the tube so that the LED packages face back side 332A of tube 332 so that light generated by the LED packages shines therethrough.
- LED packages such as an array of LED packages
- Such embodiments can be used in lighting fixtures where it is desirable to have light shining in opposite directions so that light from a single lighting device can shine in a more full range of area.
- such lighting devices can create a light output that covers a large radius and portion of a circumference on either side of the lighting device. In this manner, a generally full radius of light can be generated.
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Abstract
L'invention concerne des boîtiers, des systèmes et des dispositifs à diodes électroluminescentes (DEL), ainsi que des procédés associés. Les boîtiers peuvent comprendre une grille de connexion à support de puce électroconducteur présentant une surface supérieure. Une DEL peut être placée sur la surface supérieure du support de puce électroconducteur. Une gaine peut être disposée sur la grille de connexion de manière à en couvrir au moins une partie. Une cavité de réflexion peut être ménagée dans la gaine entourant la DEL. La cavité de réflexion peut comprendre des parties de paroi latérale inclinées et des parties de paroi d'extrémité inclinées, l'angle d'inclinaison des parties de paroi latérale étant différent de l'angle d'inclinaison des parties de paroi d'extrémité.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020137031905A KR20140018979A (ko) | 2011-05-03 | 2012-05-02 | 발광 다이오드(led) 패키지들, 시스템들, 디바이스들 및 이와 관련된 방법들 |
CN201280021567.6A CN103534821B (zh) | 2011-05-03 | 2012-05-02 | 发光二极管(led)的封装、系统、装置及相关方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201161482088P | 2011-05-03 | 2011-05-03 | |
US61/482,088 | 2011-05-03 |
Publications (1)
Publication Number | Publication Date |
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WO2012151270A1 true WO2012151270A1 (fr) | 2012-11-08 |
Family
ID=47108027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2012/036110 WO2012151270A1 (fr) | 2011-05-03 | 2012-05-02 | Boîtiers, systèmes et dispositifs à diodes électroluminescentes (del), et procédés associés |
Country Status (4)
Country | Link |
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KR (1) | KR20140018979A (fr) |
CN (1) | CN103534821B (fr) |
TW (1) | TW201251132A (fr) |
WO (1) | WO2012151270A1 (fr) |
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US8860043B2 (en) | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US8866166B2 (en) | 2009-06-05 | 2014-10-21 | Cree, Inc. | Solid state lighting device |
US8878217B2 (en) | 2010-06-28 | 2014-11-04 | Cree, Inc. | LED package with efficient, isolated thermal path |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
US9123874B2 (en) | 2009-01-12 | 2015-09-01 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US9859471B2 (en) | 2011-01-31 | 2018-01-02 | Cree, Inc. | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
US11101408B2 (en) | 2011-02-07 | 2021-08-24 | Creeled, Inc. | Components and methods for light emitting diode (LED) lighting |
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US9786825B2 (en) | 2012-02-07 | 2017-10-10 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components, and methods |
CN109244102A (zh) | 2018-09-10 | 2019-01-18 | 佛山市国星光电股份有限公司 | 一种led显示单元组及显示面板 |
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US9123874B2 (en) | 2009-01-12 | 2015-09-01 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US8860043B2 (en) | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US8866166B2 (en) | 2009-06-05 | 2014-10-21 | Cree, Inc. | Solid state lighting device |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
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US9859471B2 (en) | 2011-01-31 | 2018-01-02 | Cree, Inc. | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
US11101408B2 (en) | 2011-02-07 | 2021-08-24 | Creeled, Inc. | Components and methods for light emitting diode (LED) lighting |
Also Published As
Publication number | Publication date |
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CN103534821A (zh) | 2014-01-22 |
KR20140018979A (ko) | 2014-02-13 |
TW201251132A (en) | 2012-12-16 |
CN103534821B (zh) | 2017-03-29 |
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