WO2012148552A2 - Nanocapteurs électromagnétiques de redressement - Google Patents

Nanocapteurs électromagnétiques de redressement Download PDF

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Publication number
WO2012148552A2
WO2012148552A2 PCT/US2012/026600 US2012026600W WO2012148552A2 WO 2012148552 A2 WO2012148552 A2 WO 2012148552A2 US 2012026600 W US2012026600 W US 2012026600W WO 2012148552 A2 WO2012148552 A2 WO 2012148552A2
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Prior art keywords
substrate portion
channel
substrate
detector
boundary
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PCT/US2012/026600
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English (en)
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WO2012148552A3 (fr
Inventor
Jonathan P. Bird
Gregory R. AIZIN
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The Research Foundation Of State University Of New York
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Publication of WO2012148552A2 publication Critical patent/WO2012148552A2/fr
Publication of WO2012148552A3 publication Critical patent/WO2012148552A3/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878—Sensors; antennas; probes; detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Definitions

  • the present invention pertains to the use of nanoscale semiconductor devices as broadband, room-temperature detectors of electromagnetic radiation including radiation in the microwave and terahertz regions of the spectrum.
  • THz terahertz
  • VOx microbolometer arrays have been used to achieve standoff detection of the THz radiation emitted from quantum cascade lasers, over distances as long as 25 meters. These detectors also suffer from poor sensitivity beyond 1 THz, however, since they again require active illumination by powerful THz sources.
  • THz rectifiers are Schottky diodes, which operate at room temperatures and are widely used as detectors at radio and microwave frequencies. Their use for detection in the THz range is limited, however, for a number of reasons.
  • Schottky diodes Due to the fact that they are planar tunnel structures, conventional Schottky diodes have large RC constants, and cutoff frequencies that generally fall below the THz range.
  • the invention may be embodied as an electromagnetic radiation detector.
  • the detector comprises a semiconductor substrate and at least one interrupt region.
  • the semiconductor substrate may be selected to form a depletion region at each boundary of the substrate.
  • the semiconductor substrate comprises a GaAs/AlGaAs heterostructure.
  • At least one interrupt region defines boundaries of a first substrate portion, a second substrate portion, and a channel substrate portion.
  • the interrupt region(s) may be disposed in the substrate.
  • the interrupt region(s) may be gates disposed on the substrate. In another embodiment, the gates may be formed from metal and supplied with a negative potential difference.
  • the interrupt regions may be formed from a suitable material that forms a junction with the substrate resulting in a depletion region. For example, air, metal, doped- semiconductor, or other insulative materials may be used.
  • the channel substrate portion connects the first substrate portion and the second substrate portion.
  • the channel substrate portion may have a width defined by the distance between a first channel boundary and a second channel boundary. In one
  • the width of the channel substrate portion may be defined by the shortest distance between the first channel boundary and the second channel boundary.
  • the width of the channel substrate portion may be between 100 nm and 300 nm.
  • the second channel boundary may be the edge or boundary of the substrate itself.
  • the channel substrate portion may also have a length defined by the distance between the first substrate portion and the second substrate portion.
  • the length of the channel substrate portion may be defined by the shortest distance between the first substrate portion and the second substrate portion.
  • the length of the channel substrate may be approximately 500 nm.
  • the width of the channel substrate portion may be selected such that a first depletion region formed at the first channel boundary overlaps with a second depletion region formed at the second channel boundary.
  • the first and the second depletion regions may overlap when the potential difference across the length of the channel substrate portion is 0 volts.
  • the first and the second depletion regions overlap such that the electrical conductance along the length of the channel substrate portion is non-linear as a function of the potential difference across the length.
  • the first and the second depletion regions may overlap when the detector is at room temperature.
  • Room temperature may be defined as a temperature between and including 18 degrees to 22 degrees Celsius.
  • the detector may further comprise a conductive gate layer.
  • the conductive gate layer may be disposed on at least a part of the channel substrate portion and affect the electrical conductance of the channel substrate portion.
  • the conductive gate layer may be capacitively coupled with the channel substrate portion.
  • the invention may also be embodied as a method of detecting electromagnetic radiation in a target environment. The steps of the method may comprise providing a detector, biasing a first and/or second substrate portion, establishing a reference profile, exposing the detector to the target environment, measuring an electrical characteristic, and detecting electromagnetic radiation by comparing the measured electrical characteristic to the reference profile.
  • the frequency of the detected electromagnetic radiation may be between 1 THz and 10 THz.
  • the provided detector may have a semiconductor substrate and at least one interrupt region.
  • the interrupt region(s) define boundaries of a first substrate portion, a second substrate portion, and a channel substrate portion.
  • the interrupt region(s) may be disposed in the substrate.
  • the interrupt region(s) may be gates disposed on the substrate. In another embodiment, the gates may be formed from metal and supplied with a negative potential difference.
  • the interrupt region(s) may be formed from any suitable material that forms a junction with the substrate resulting in a depletion region.
  • the channel substrate portion connects the first substrate portion and the second substrate portion.
  • the channel substrate portion may have a width defined by the distance between a first channel boundary and a second channel boundary.
  • the channel substrate portion may also have a length defined by the distance between the first substrate portion and the second substrate portion.
  • the width of the channel substrate portion may be selected such that a first depletion region formed at the first channel boundary overlaps with a second depletion region formed at the second channel boundary.
  • the first and the second depletion regions may overlap when the potential difference across the length of the channel substrate portion is 0 volts.
  • the detector may be exposed to the target environment and an electrical characteristic is measured between the first and second substrate areas.
  • the biasing step may be performed on the first and/or second substrate portions. The biasing may be performed at different potentials or currents. For example, the biasing may be performed by varying the potential difference between the first substrate portion and the second substrate portion.
  • the establishing step may establish a reference profile by measuring a baseline electrical characteristic between the first substrate portion to the second substrate portion when the device is exposed to ambient electromagnetic radiation. The electrical characteristic may be voltage and/or current.
  • the devices described here use nanoscale semiconductor devices as broadband, room-temperature detectors of electromagnetic radiation (including radiation in the microwave and terahertz regions of the spectrum).
  • radiation is detected by utilizing intrinsic nonlinearities in the electrical characteristics of the nanosensor, such as their drain conductance or transconductance.
  • the nonlinearities generate either a measurable photo-current or photo-voltage, by rectifying the incident electromagnetic radiation.
  • Such nanosensors function by utilizing the exchange of charge between surface states, formed at the etched walls of the nanosensor, and the interior of the nanosensor channel, as a way to generate the pronounced nonlinearities needed for efficient radiation detection.
  • Devices according to the present invention overcome many of the limitations identified above. Due to the classical nature of their rectification mechanism (further described below), the present devices are capable of exhibiting broadband THz response, particularly in the critical 1 - 10 THz range that is currently poorly served by previous technology. In contrast to detectors that rely on bolometric mechanisms, the present devices are immune to the influence of the blackbody background, allowing more sensitive detection to be achieved. The present devices also respond very quickly (on nanosecond timescales) to driving potentials, and are well-suited for applications requiring real-time processing, such as video-rate THz imaging. In contrast to Schottky diodes, the present devices are planar in their construction, making them far more amenable to multi-device integration for focal-plane imaging.
  • the present devices are useful for broad application in THz sensing, including active THz imaging in both commercial and military settings. Other applications lie in nondestructive evaluation, quality control and studies of atmospheric interactions. Furthermore, the present devices are highly suited to integration into multi-element focal plane arrays, making them useful for application to real-time THz imaging systems.
  • Figure 1 illustrates a device in following with one embodiment of the
  • FIG. 2a illustrates a device in following with another embodiment
  • FIG. 2b illustrates conductance quantization of quantum point
  • Figure 3 illustrates a comparison of measured THz photo-response to
  • FIG. 4 illustrates THz induced photo-current at 1.45 K and 1.63
  • Figure 5 a illustrates a comparison of dark and irradiate I d -V sd curves
  • Figure 5b illustrates similar measurements compared to Figure 5a in
  • Figure 6 illustrates a nanoscale channel, around 100 nm wide, realized in a 2DEG substrate by focused-ion-beam milling in keeping with the invention
  • Figure 8a illustrates current-voltage characteristics measured at room
  • FIG. 8b illustrates THz photo-current calculated by subtraction of
  • Figure 9 illustrates a method as one embodiment of the present
  • Fig. 6 depicts an electromagnetic radiation detector 61 according to an embodiment of the present invention.
  • the detector 61 comprises a semiconductor substrate 60 and at least one interrupt region (embodiments having two interrupt regions 62, 63 are depicted in the figures).
  • the semiconductor substrate 60 forms a depletion region at each boundary of the semiconductor substrate 60.
  • a depletion region forms at the boundary of the interrupt regions 62, 63 and the boundary of the semiconductor substrate 60 itself (the natural boundary).
  • the semiconductor substrate 60 comprises a GaAs/AlGaAs heterostructure.
  • Other semiconductors, and combinations of semiconductors, that form depletion regions at boundaries are also suitable for use in embodiments of the invention.
  • the interrupt regions 62, 63 define boundaries of a first substrate portion 65, a second substrate portion 64, and a channel substrate portion 66.
  • the channel substrate portion 66 connects the first substrate portion 65 and the second substrate portion 64.
  • the interrupt regions 62, 63 may be disposed in the semiconductor substrate 60.
  • the interrupt regions 62, 63 may be gaps in the semiconductor substrate 60 formed by removal of substrate material.
  • the interrupt regions 62, 63 may comprise any material which forms a boundary (e.g., a junction) causing the semiconductor to form a depletion region.
  • the interrupt regions 62, 63 may comprise a insulative material (e.g., air, etc.), metal, doped- semiconductor, or any other material that creates this effect (and combinations thereof).
  • the interrupt regions 62, 63 may be gates disposed on the semiconductor substrate 60.
  • the gates may be comprised of metal and layered on the semiconductor substrate 60. Such gates are supplied with a negative potential, causing a depletion region to form due to the electrical charge on the gates.
  • the extents of the channel substrate portion 66 may be defined by the interrupt regions 62, 63.
  • the detector 61 has a shape akin to an hour-glass (although symmetry is not a requirement).
  • the extents of the channel substrate portion 66 may be defined by the interrupt region and the natural boundary of the semiconductor substrate 60 (a depletion region forming at the natural boundary).
  • the channel substrate portion 66 has a width w defined by the distance between a first channel boundary 68 and a second channel boundary 69.
  • the width w of the channel substrate portion 66 may be defined by the shortest distance between the first channel boundary 68 and the second channel boundary 69. For example, where the first and second channel boundaries are curved, the width w may be selected as the shortest distance between such curved boundaries. In some embodiments, the width w of the channel substrate portion 66 is between 100 nm and 300 nm.
  • the channel substrate portion 66 also has a length / defined by the distance between the first substrate portion 65, and the second substrate portion 64.
  • the length / of the channel substrate portion 66 may be defined by the shortest distance between the first substrate portion 65 and the second substrate portion 64. In some embodiments, the length / of the channel substrate portion 66 is approximately 500 nm.
  • the width w of the channel substrate portion 66 is selected such that a first depletion region formed at the first channel boundary 68 overlaps with a second depletion region formed at the second channel boundary 69 when the potential difference across the length of the channel substrate portion 66 is 0 volts. In this way, no voltage need be applied to the substrate portions (e.g., no charge on the first and/or second substrate portions 65, 64 adjacent to the channel substrate portion 66) to achieve the interaction between the depletion regions. The potential of the first substrate portion 65 and second substrate portion 64 may be adjusted.
  • Such adjustments include, without limitation, varying the potential difference between the first and second substrate portions 65, 64 over time, varying the potential difference from a positive to a negative value, varying the potential difference from a negative to a positive value, and a combination of such adjustments.
  • the first and the second depletion regions may overlap such that the electrical conductance along the length / of the channel substrate portion 66 is non-linear as a function of the potential difference across the length /.
  • the first and the second depletion regions overlap when the detector 61 is at room temperature.
  • Room temperature may be defined as a temperature between and including 18 degrees to 22 degrees Celsius.
  • a conductive gate layer may be disposed on at least a part of the channel substrate portion 66, the conductive gate layer being capacitively coupled to the channel substrate portion 66. In this manner, the conductive gate layer may affect the electrical conductance of the channel substrate portion 66.
  • Fig. 9 depicts a method 90 of detecting electromagnetic radiation in a target environment according to an embodiment of the present invention. The steps of the method 90 comprise providing 91 a detector similar to the aforementioned detector, biasing 92 a first and/or second substrate portion of the detector, establishing 94 a reference profile, exposing 96 the detector to the target environment, measuring 98 an electrical characteristic, and detecting 99 electromagnetic radiation by comparing the measured electrical characteristic to the reference profile.
  • the frequency of the detected electromagnetic radiation is be between 1 THz and 10 THz.
  • the provided 91 detector has a semiconductor substrate and at least one interrupt region.
  • the interrupt region(s) define boundaries of a first substrate portion, a second substrate portion, and a channel substrate portion.
  • the interrupt region(s) may be disposed in the substrate.
  • the interrupt region(s) may also be gates disposed on the substrate. In another embodiment, the gates may be formed from metal and supplied with a negative potential difference.
  • the interrupt reasons may be any suitable material that forms a junction with the substrate resulting in a depletion region.
  • a channel substrate portion connects the first substrate portion and the second substrate portion.
  • the channel substrate portion may have a width defined by the distance between a first channel boundary and a second channel boundary.
  • the channel substrate portion may also have a length defined by the distance between the first substrate portion and the second substrate portion.
  • the width of the channel substrate portion may be selected such that a first depletion region formed at the first channel boundary overlaps with a second depletion region formed at the second channel boundary.
  • the first and the second depletion regions may overlap when the potential difference across the length of the channel substrate portion is 0 volts.
  • the detector may be exposed 96 to the target environment and an electrical characteristic may be measured 98 between the first and second substrate areas.
  • the biasing 92 step may be performed on the first and/or second substrate portions.
  • the biasing 92 may be performed at different potentials or currents.
  • the biasing may be performed by varying the potential difference between the first substrate portion and the second substrate portion.
  • the voltage or current value may be swept from positive to negative, and negative to positive.
  • the establishing 94 step may establish a reference profile by measuring a baseline electrical characteristic between the first substrate portion and the second substrate portion when the device is exposed to ambient electromagnetic radiation.
  • the electrical characteristic may be voltage and/or current.
  • Electromagnetic radiation may be detected 99 by comparing the measured 98 electrical characteristic to the reference profile.
  • the reference profile may be subtracted from the measured electrical characteristic, the results indicating the presence of electromagnetic radiation on the sensor.
  • Fig. 8a and Fig. 8b are an example of one such comparison.
  • Fig. 2a depicts a Quantum Point Contact.
  • Quantum Point Contacts are nanoelectronic devices realized by using nanofabrication techniques to deposit metal gates 20, 24, separated by a nanoscale gap, on the surface of a high-mobility semiconductor 26.
  • the gap may be approximately lOOnm.
  • V g negative bias
  • Fig. 2b shows the variation of the QPC conductance as a function of gate voltage (V g ) at 2.5 K. As V g is made more negative, the transverse confinement within the QPC grows, and the conductance decreases in a step-like fashion as the number of ID subbands occupied by electrons decreases one at a time.
  • the invention may utilize a result in the multi-subband regime. Namely, the strongly non-linear nature of the transconductance, arising from its ID quantization (see Fig.
  • FIG. 3 An example of this photo-response is shown in Fig. 3, in which the THz-induced photo-current ( ⁇ / ⁇ ⁇ ) is plotted as a function of V g (data are for a different device to that of Fig. 2a).
  • ⁇ ⁇ shows a clear series of oscillations, which were found to be correlated to the transitions between successive quantized steps; that is, to the regions of maximum non- linearity in the transconductance.
  • the invention may utilize THz irradiation on the electrical characteristics in the barrier-limited regime, where the QPC is pinched-off and thermal activation over its local barrier is the main mechanism for current flow.
  • an Id- V s d curve of the QPC was measured at different fixed gate voltages. Modifications to the curve due to THz irradiation were studied. Under dark conditions, the current exhibits a region near zero bias where it is strongly suppressed, due to the presence of the local barrier, but at larger V s d it increases significantly due to an associated lowering of this barrier.
  • Figs. 4, 5a, and 5b Representative results from THz measurements are presented in Figs. 4, 5a, and 5b.
  • Fig. 5a shows Id- V s d curves measured with and without THz irradiation (at 1.63 THz). These data are for a fixed gate voltage of -5.6 V.
  • the THz photo-current obtained by the subtraction of these two curves is plotted, along with similar measurements at other gate voltages.
  • Reproducible step-like features are apparent in all of the curves. These features are correlated with the population of successive ID subbands of the QPC, as the increasing source voltage pulls down the QPC barrier.
  • This photo-response can largely be attributed to a bolometric effect (i.e. laser-induced heating), which can be even stronger than any rectification in this regime of activated transport.
  • Devices according to embodiments of the present invention utilize strong lateral carrier confinement, leading to pronounced electrical non-linearities that are robust even in the presence of the thermal fluctuations present at room temperature.
  • Devices according the present invention utilize the low (meV) photon energy of THz waves, a characteristic that makes such waves well suited to stand-off materials evaluation and security screening— applications where it is desirable to avoid the use of ionizing radiation such as X-rays.
  • the short wavelength ( ⁇ 10 2 ⁇ ) of THz photons also makes them well suited for imaging applications, where they can provide enhanced resolution as compared to longer- wavelength microwaves.
  • devices according to embodiments of the present invention can be implemented in a CMOS process flow, or are, at least, compatible with CMOS manufacturing.
  • Devices according to embodiments of the present invention may comprise semiconductor nanoconstrictions in which strong lateral confinement of the carriers, combined with electrostatic gating, will allow the creation of highly non-linear features in their electrical characteristics. Such non-linearities may be exploited to achieve efficient THz rectification. The ability to induce such strong electrical non-linearities may significantly improve detector responsivity, while at the same time also lower noise equivalent power (“NEP”), which describes the minimum signal power distinguishable from signal noise.
  • the lateral structure of the sensors will make them amenable to integration into large CMOS circuits, such as image-processing arrays.
  • nanoconstrictions are realized by using suitable nanolithography approaches to implement a channel, around 500-nm long and of width 100 - 400 nm, in the high-mobility 2DEG of a
  • the nanoconstriction may be fabricated by using wet chemical etching to transfer the desired pattern to the substrate and using electron-beam lithography to expose the desired pattern.
  • focused-ion-beam milling may be used to implement a one-step process in which excess material is milled away to form the interrupt regions in the substrate and thereby forming the channel substrate portion. Both approaches provide a reliable method of fabricating suitable devices, although the focused-ion-beam method allows for more precise control of the device dimensions.
  • An example of a nanoconstriction fabricated by ion-beam milling is shown in Fig. 6. Other techniques for fabricating similar structures in semiconductive material may be utilized.
  • nanoconstrictions have been investigated by applying a variable source-drain voltage (Vsd) and measuring the variation of the resulting current (Id).
  • Vsd variable source-drain voltage
  • Id the resulting current
  • the first and second substrate portions can be a source (s) and drain (d) with the channel substrate portion (nanoconstriction) connecting the source and the drain.
  • these characteristics were also measured for a variety of temperatures between 77 & 300 K in the exemplary devices.
  • the curves of Fig. 7 indicate the presence of robust non-linearity that persists even at room temperature. Although not apparent on the scale of Fig. 7, the data for the 130 nm constriction also exhibit strong non- linearity. Measurements have been performed on a 180 nm width constriction. The measurements were made at room temperature, using a C02 gas laser to pump methanol gas and generate radiation at 2.5 THz. With an emphasis on providing a proof-of-principle demonstration, measurements were made with a simple setup in which the test device was placed, while subject to ambient room illumination, in the path of the unfocused THz beam. These results, as illustrated in Fig.
  • Fig. 8a determine the THz photo-current by measuring the Ia- V s d curve for the device both in the absence of, and under, THz illumination Fig. 8a. It should be noted that these curves are distinct from that shown in Fig. 7, which was obtained for a similar device but without ambient room illumination.
  • Fig. 8b shows the photo-current obtained by subtraction of these two measurements, and reveals a significant response to the THz irradiation. This response is maximal near ⁇ 4 V (around 0.5 ⁇ ), where the current reaches a plateau like feature, but is of opposite polarity to that of the current itself.
  • Embodiments of devices according to the present invention may include integrating a local nanoscale gate to achieve an additional, rectification-based, modulation of the detector current.
  • FIG. 1 illustrates an embodiment of a device according to the present invention.
  • three interrupt regions 10, 14, 18 form a nanoscale gap 12.
  • Embodiments of devices according to the present invention may include impedance-matched antenna structures to efficiently couple radiation to the detector.
  • the present invention has been described with respect to one or more particular embodiments, it will be understood that other embodiments of the present invention may be made without departing from the spirit and scope of the present invention. Hence, the present invention is deemed limited only by the appended claims and the reasonable interpretation thereof.

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Abstract

L'invention peut être mise en œuvre sous forme d'un semi-conducteur nanométrique pour la détection en bande large à température ambiante de rayonnement électromagnétique, y compris les rayonnements dans les plages micro-ondes et terahertz du spectre. Le rayonnement peut être détecté en utilisant les non-linéarités intrinsèques des caractéristiques électriques du nanocapteur, comme la conductance ou la transconductance du drain. Les non-linéarités génèrent un photo-courant ou une photo-tension mesurables en redressant le rayonnement électromagnétique incident. L'invention peut comprendre l'utilisation de l'échange de charge entre les états de surface formés au niveau des parois attaquées du nanocapteur et l'intérieur du nanocapteur, comme moyen permettant de générer les non-linéarités prononcées nécessaires pour une détection efficace du rayonnement.
PCT/US2012/026600 2011-02-24 2012-02-24 Nanocapteurs électromagnétiques de redressement WO2012148552A2 (fr)

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WO2020068261A1 (fr) 2018-09-28 2020-04-02 Massachusetts Institute Of Technology Molécules immunomodulatrices localisées dans le collagène et leurs procédés
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WO2021221782A1 (fr) 2020-05-01 2021-11-04 Massachusetts Institute Of Technology Ligands chimériques ciblant des récepteurs antigéniques et leurs utilisations
WO2023081715A1 (fr) 2021-11-03 2023-05-11 Viracta Therapeutics, Inc. Association d'une thérapie de lymphocytes car t avec des inhibiteurs de tyrosine kinase de bruton et procédés d'utilisation associés

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019060425A1 (fr) 2017-09-19 2019-03-28 Massachusetts Institute Of Technology Compositions pour la thérapie par lymphocytes t à récepteur antigénique chimérique et leurs utilisations
CN109125941A (zh) * 2018-08-07 2019-01-04 丁明刚 一种太赫兹玻璃器皿
WO2020068261A1 (fr) 2018-09-28 2020-04-02 Massachusetts Institute Of Technology Molécules immunomodulatrices localisées dans le collagène et leurs procédés
WO2020263399A1 (fr) 2019-06-26 2020-12-30 Massachusetts Institute Of Technology Complexes protéine de fusion-hydroxyde métallique immunomodulateurs et leurs procédés
WO2021061648A1 (fr) 2019-09-23 2021-04-01 Massachusetts Institute Of Technology Méthodes et compositions pour la stimulation de réponses de lymphocytes t endogènes
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