WO2012144851A2 - Appareil de façonnage de lingots - Google Patents

Appareil de façonnage de lingots Download PDF

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Publication number
WO2012144851A2
WO2012144851A2 PCT/KR2012/003057 KR2012003057W WO2012144851A2 WO 2012144851 A2 WO2012144851 A2 WO 2012144851A2 KR 2012003057 W KR2012003057 W KR 2012003057W WO 2012144851 A2 WO2012144851 A2 WO 2012144851A2
Authority
WO
WIPO (PCT)
Prior art keywords
seed crystal
ingot
temperature difference
difference compensation
fabricating apparatus
Prior art date
Application number
PCT/KR2012/003057
Other languages
English (en)
Other versions
WO2012144851A3 (fr
Inventor
Bum Sup Kim
Chang Hyun Son
Original Assignee
Lg Innotek Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co., Ltd. filed Critical Lg Innotek Co., Ltd.
Publication of WO2012144851A2 publication Critical patent/WO2012144851A2/fr
Publication of WO2012144851A3 publication Critical patent/WO2012144851A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Definitions

  • the present disclosure relates to an ingot fabricating apparatus.
  • source materials are very important in electric and electronic industries and the field of mechanical parts, and thus, are main factors for practically determining the characteristics and performance indices of final parts.
  • SiC Silicon carbide
  • SiC is thermally stable, and has excellent oxidation resistance.
  • SiC has a high thermal conductivity of about 4.6 W/cm°C, and can be used to fabricate a substrate having a large diameter of 2 inches or greater.
  • a SiC single crystal growing technology is practically most stable and reliable, a substrate manufacturing technology using SiC is most developed.
  • a sublimation recrystallization method may be used to grow a SiC single crystal from SiC and a seed crystal.
  • SiC powder as a source material is put in a crucible, and a SiC single crystal as a seed crystal is disposed in the upper portion of the crucible.
  • a temperature gradient is formed between the source material and the seed crystal, whereby the source material in the crucible is spread to the seed crystal, and is recrystallized to grow the SiC single crystal.
  • Embodiments provide an ingot fabricating apparatus for growing a high quality single crystal.
  • an ingot fabricating apparatus includes: a crucible accommodating a source material; and an upper cover over the source material, wherein the upper cover includes a seed crystal fixing unit fixing a seed crystal; and a guide part guiding the seed crystal fixing unit.
  • an ingot fabricating apparatus includes a seed crystal fixing unit and a guide part. Since the guide part is screwed to the seed crystal fixing unit, the seed crystal fixing unit can rotate to move vertically. That is, when a driving part is rotated, torque from the driving part is transmitted to the seed crystal fixing unit to rotate it.
  • a distance between the seed crystal and a source material can be adjusted. That is, a gap between the source material and a single crystal growing from the seed crystal can be adjusted. As the single crystal grows, the single crystal comes closer to the source material having higher temperature so as to decrease the gap. In this case, the higher temperature of the source material may affect the quality of the single crystal. To address this issue, the gap between the source material and the single crystal can be constantly maintained, whereby the single crystal can have high quality.
  • the ingot fabricating apparatus includes a temperature difference compensation part.
  • the temperature difference compensation part is thicker in a portion corresponding to the central portion of the seed crystal, than in the other portions thereof, thereby increasing the temperature of the central portion of the seed crystal.
  • the center area maintains the central portion of the seed crystal at high temperature.
  • a temperature difference between the central portion and edge of the seed crystal can be decreased. That is, the temperature of the seed crystal can be uniformly maintained. Thus, a defect rate at the edge of the seed crystal can be minimized.
  • the central portion of the single crystal growing from the seed crystal can be prevented from bulging. Accordingly, the single crystal can be used more efficiently.
  • Fig. 1 is a first cross-sectional view illustrating an ingot fabricating apparatus according to a first embodiment.
  • Fig. 2 is a second cross-sectional view illustrating the ingot fabricating apparatus according to the first embodiment.
  • Fig. 3 is an exploded perspective view illustrating an upper cover according to the first embodiment.
  • Fig. 4 is a cross-sectional view illustrating an ingot fabricating apparatus according to a second embodiment.
  • Fig. 5 is an exploded perspective view illustrating an upper cover according to the second embodiment.
  • Fig. 6 is a cross-sectional view illustrating an ingot fabricating apparatus according to a third embodiment.
  • Fig. 7 is an exploded perspective view illustrating an upper cover according to the third embodiment.
  • each layer (or film), region, pattern or structure may be exaggerated, omitted, or schematically illustrated for convenience in description and clarity.
  • Fig. 1 is a first cross-sectional view illustrating an ingot fabricating apparatus according to the first embodiment.
  • Fig. 2 is a second cross-sectional view illustrating the ingot fabricating apparatus according to the first embodiment.
  • Fig. 3 is an exploded perspective view illustrating an upper cover according to the first embodiment.
  • an ingot fabricating apparatus 10 includes a crucible 100, an upper cover 200, an insulating material 300, a quartz tube 400, a heating induction part 500, and a temperature measuring part 600.
  • the crucible 100 may accommodate a source material 130.
  • the source material 130 may include silicon and carbon. More particularly, the source material 130 may include a silicon carbide compound.
  • the crucible 100 may accommodate silicon carbide (SiC) powder or polycarbosilane.
  • the crucible 100 may have a cylindrical barrel shape to accommodate the source material 130.
  • the crucible 100 may include a material having a melting point equal to or higher than the sublimation temperature of silicon carbide.
  • the crucible 100 may be formed of graphite.
  • the crucible 100 may be formed of graphite, and then, be coated with a material having a melting point equal to or higher than the sublimation temperature of silicon carbide.
  • the material used to coat the crucible 100 may be chemically inert with silicon and hydrogen at a growth temperature of a silicon carbide single crystal 190.
  • the material used to coat the crucible 100 may be metal carbide or metal nitride.
  • the material used to coat the crucible 100 may include: a mixture including at least two of Ta, Hf, Nb, Zr, W, and V; and carbide including carbon.
  • the material used to coat the crucible 100 may include: a mixture including at least two of Ta, Hf, Nb, Zr, W, and V; and nitride including nitrogen.
  • the upper cover 200 is disposed over the source material 130. That is, the upper cover 200 may be disposed on the upper portion of the crucible 100. The upper cover 200 may seal the crucible 100, so that a reaction can occur within the crucible 100.
  • the upper cover 200 may include the same material as that of the crucible 100. Accordingly, the upper cover 200 may store heat, like the crucible 100.
  • the upper cover 200 includes a seed crystal fixing unit 210 fixing a seed crystal 170, a guide part 220, and a driving part 230.
  • the guide part 220 may surround the seed crystal fixing unit 210.
  • the guide part 220 may guide the seed crystal fixing unit 210. Particularly, the guide part 220 may move the seed crystal fixing unit 210. More particularly, the guide part 220 may vertically move the seed crystal fixing unit 210.
  • the guide part 220 may be screwed to the seed crystal fixing unit 210. Accordingly, the seed crystal fixing unit 210 can be moved vertically. To this end, the guide part 220 may include a coupling recess 220a for the screwing.
  • the seed crystal fixing unit 210 includes: a seed crystal fixing part 212 to which the seed crystal 170 is fixed; and a temperature difference compensation part 214 disposed on the seed crystal fixing part 212.
  • the seed crystal 170 may be fixed to the seed crystal fixing part 212.
  • the seed crystal 170 may be fixed to the seed crystal fixing part 212 through an adhesive.
  • the seed crystal fixing part 212 may have a diameter corresponding to that of the seed crystal 170. That is, the seed crystal fixing part 212 may have a diameter equal to that of the seed crystal 170. Accordingly, the single crystal 190 can grow from the seed crystal 170.
  • a polycrystal may grow on a portion of the seed crystal fixing part 212 out of the seed crystal 170.
  • the temperature difference compensation part 214 is disposed on the seed crystal fixing part 212.
  • the temperature difference compensation part 214 may protrude through the top surface of the guide part 220.
  • the temperature difference compensation part 214 includes: a center area CA corresponding to the central portion of the seed crystal 170; and an edge area EA disposed at edges of the central area CA.
  • the center area CA may be thicker than the edge area EA.
  • the temperature difference compensation part 214 may have a slope inclined from the top surface of the guide part 220.
  • the temperature difference compensation part 214 may have an arch shape.
  • the temperature of the crucible 100 may decrease from an outer wall thereof to the center thereof. Accordingly, the temperature of the seed crystal 170 is lower at the center thereof than at the edge thereof.
  • the temperature difference compensation part 214 is thicker in a portion corresponding to the central portion of the seed crystal 170, than in the other portions thereof, thereby increasing the temperature of the central portion of the seed crystal 170.
  • the center area CA maintains the central portion of the seed crystal 170 at high temperature.
  • a temperature difference between the central portion and edge of the seed crystal 170 can be decreased. That is, the temperature of the seed crystal 170 can be uniformly maintained. Thus, a defect rate at the edge of the seed crystal 170 can be minimized.
  • the central portion of the single crystal 190 growing from the seed crystal 170 can be prevented from bulging. Accordingly, the single crystal 190 can be used more efficiently.
  • the driving part 230 may be disposed on the seed crystal fixing unit 210. Particularly, the driving part 230 may be disposed on the temperature difference compensation part 214.
  • the driving part 230 may rotate the seed crystal fixing unit 210 at the later part of a single crystal growing stage. That is, the driving part 230 may rotate the seed crystal fixing unit 210 to move the seed crystal fixing unit 210 upward.
  • the guide part 220 is screwed to the seed crystal fixing unit 210, when the driving part 230 is rotated, torque from the driving part 230 is transmitted to the seed crystal fixing unit 210, so that the seed crystal fixing unit 210 may be moved upward.
  • a gap between the seed crystal 170 and the source material 130 can be adjusted. That is, a gap G between the source material 130 and the single crystal 190 growing from the seed crystal 170 can be adjusted. As the single crystal 190 grows, the single crystal 190 comes closer to the source material 130 having higher temperature so as to decrease the gap G. In this case, the higher temperature of the source material 130 may affect the quality of the single crystal 190. To address this issue, the gap G between the source material 130 and the single crystal 190 can be constantly maintained, whereby the single crystal 190 can have high quality.
  • the driving part 230 may expose the top surface of the temperature difference compensation part 214. That is, the driving part 230 may include a hollow 230a to expose the top surface of the temperature difference compensation part 214.
  • the driving part 230 may have a cylindrical shape.
  • the current embodiment is not limited thereto, and thus, various shapes including the hollow 230a may be used.
  • Temperature of the upper portion of the crucible 100 can be measured through the hollow 230a. Particularly, temperature of the upper portion of the crucible 100 can be measured based on light emitted from the top surface of the temperature difference compensation part 214.
  • the temperature measuring part 600 may be disposed over the driving part 230.
  • the temperature measuring part 600 may measure the temperature, based on light emitted through the hollow 230a of the driving part 230.
  • the temperature measuring part 600 may include an optical pyrometer. Since the crucible 100 has an inner temperature of about 2000 °C or higher, it may be difficult to insert a thermometer therein. Thus, the optical pyrometer may be used to measure the temperature.
  • the insulating material 300 surrounds the crucible 100.
  • the insulating material 300 maintains the crucible 100 at crystal growth temperature. Since silicon carbide has a very high crystal growth temperature, graphite felt may be used to form the insulating material 300.
  • the insulating material 300 may be formed of graphite felt that is fabricated by compressing graphite fiber in a cylindrical shape having a certain thickness.
  • the insulating material 300 may include a plurality of layers to surround the crucible 100.
  • the quartz tube 400 is disposed around the outer circumferential surface of the crucible 100.
  • the quartz tube 400 is fitted on the outer circumferential surface of the crucible 100.
  • the quartz tube 400 prevents heat from being transferred from the heating induction part 500 into a single crystal growing device.
  • the quartz tube 400 may be a hollow tube. Coolant may circulate through the inner space of the quartz tube 400.
  • the quartz tube 400 makes it possible to control growth speed and growth size of the single crystal 190 more accurately.
  • the heating induction part 500 is disposed outside the crucible 100.
  • the heating induction part 500 may be a high frequency induction coil.
  • the crucible 100 may be heated by applying high frequency current to the high frequency induction coil. That is, the source material 130 accommodated in the crucible 100 may be heated to a desired temperature.
  • An induction heat central region of the heating induction part 500 is lower than the central portion of the crucible 100. Accordingly, the upper and lower portions of the crucible 100 have different temperature regions, thereby causing a temperature gradient. That is, since a hot zone HZ as the central portion of the heating induction part 500 is lower than the center of the crucible 100, the temperature of the lower portion of the crucible 100 with respect to the hot zone HZ is higher than that of the upper portion thereof. The temperature of the crucible 100 increases from the inner central portion of to the edge thereof, thereby also causing a temperature gradient. According to the temperature gradient, silicon carbide is sublimated from the source material 130, and the sublimated silicon carbide as gas is moved to the surface of the seed crystal 170 having relatively low temperature. Then, the silicon carbide gas is recrystalized to grow the single crystal 190.
  • Fig. 4 is a cross-sectional view illustrating an ingot fabricating apparatus according to the second embodiment.
  • Fig. 5 is an exploded perspective view illustrating an upper cover according to the second embodiment.
  • a temperature difference compensation part 214a of an ingot fabricating apparatus 20 may include a slope inclined from the top surface of a guide part 221.
  • the temperature difference compensation part 214a may have a conic shape.
  • Fig. 6 is a cross-sectional view illustrating an ingot fabricating apparatus according to the third embodiment.
  • Fig. 7 is an exploded perspective view illustrating an upper cover according to the third embodiment.
  • an ingot fabricating apparatus 30 includes a temperature difference compensation part 214b.
  • the temperature difference compensation part 214b may include a first temperature difference compensation part 215b, a second temperature difference compensation part 216b, and a third temperature difference compensation part 217b.
  • the first temperature difference compensation part 215b is disposed at the top surface of a guide part.
  • the second temperature difference compensation part 216b is disposed on the top surface of the first temperature difference compensation part 215b, and forms a stepped portion with the first temperature difference compensation part 215b.
  • the third temperature difference compensation part 217b is disposed on the top surface of the second temperature difference compensation part 216b, and forms a stepped portion with the second temperature difference compensation part 216b.
  • the temperature difference compensation part 214b may have a stair shape.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un appareil destiné à façonner un lingot, comprenant un creuset et un couvercle supérieur. Le creuset reçoit un matériau source. Le couvercle supérieur est disposé par-dessus le matériau source. Le couvercle supérieur comprend une unité de fixation de cristal d'amorce qui maintient un cristal d'amorce, ainsi qu'une partie de guidage qui guide l'unité de fixation de cristal d'amorce.
PCT/KR2012/003057 2011-04-21 2012-04-20 Appareil de façonnage de lingots WO2012144851A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0037236 2011-04-21
KR1020110037236A KR20120119365A (ko) 2011-04-21 2011-04-21 잉곳 제조 장치

Publications (2)

Publication Number Publication Date
WO2012144851A2 true WO2012144851A2 (fr) 2012-10-26
WO2012144851A3 WO2012144851A3 (fr) 2013-03-21

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Application Number Title Priority Date Filing Date
PCT/KR2012/003057 WO2012144851A2 (fr) 2011-04-21 2012-04-20 Appareil de façonnage de lingots

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KR (1) KR20120119365A (fr)
WO (1) WO2012144851A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101538556B1 (ko) * 2013-12-26 2015-07-22 주식회사 포스코 물리적 체결을 이용한 대구경 단결정 성장장치 및 방법
KR102122668B1 (ko) * 2018-12-12 2020-06-12 에스케이씨 주식회사 잉곳의 제조장치 및 이를 이용한 탄화규소 잉곳의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070283880A1 (en) * 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
KR20090078516A (ko) * 2008-01-15 2009-07-20 (주)크리스밴드 대구경 고품질 탄화규소 단결정 잉곳 성장을 위한 종자정부착 방법
KR20100070156A (ko) * 2008-12-17 2010-06-25 (주)크리스밴드 종자정 어셈블리 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070283880A1 (en) * 2005-03-24 2007-12-13 Tsvetkov Valeri F Apparatus and method for the production of bulk silicon carbide single crystals
KR20090078516A (ko) * 2008-01-15 2009-07-20 (주)크리스밴드 대구경 고품질 탄화규소 단결정 잉곳 성장을 위한 종자정부착 방법
KR20100070156A (ko) * 2008-12-17 2010-06-25 (주)크리스밴드 종자정 어셈블리 및 그 제조 방법

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Publication number Publication date
WO2012144851A3 (fr) 2013-03-21
KR20120119365A (ko) 2012-10-31

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