WO2012137597A1 - Protection circuit module and battery pack - Google Patents

Protection circuit module and battery pack Download PDF

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Publication number
WO2012137597A1
WO2012137597A1 PCT/JP2012/057084 JP2012057084W WO2012137597A1 WO 2012137597 A1 WO2012137597 A1 WO 2012137597A1 JP 2012057084 W JP2012057084 W JP 2012057084W WO 2012137597 A1 WO2012137597 A1 WO 2012137597A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal wiring
protection circuit
circuit module
substrate
switching element
Prior art date
Application number
PCT/JP2012/057084
Other languages
French (fr)
Japanese (ja)
Inventor
亮介 山本
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Publication of WO2012137597A1 publication Critical patent/WO2012137597A1/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H01M10/486Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte for measuring temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2200/00Safety devices for primary or secondary batteries
    • H01M2200/10Temperature sensitive devices
    • H01M2200/106PTC
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10196Variable component, e.g. variable resistor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Definitions

  • the present invention relates to a protection circuit module and a battery pack, and more particularly to a structure related to thermal coupling between a switching element and a thermal element in a circuit.
  • the battery pack has a configuration in which a secondary battery such as a lithium ion battery is housed in a case together with a protection circuit module and the like.
  • the protection circuit module An IC element, FET element, external connection terminal, and the like are mounted on the substrate.
  • the protection circuit module also includes a thermistor element that detects the temperature of an external connection terminal, an FET element, and the like. A thermal coupling structure of the FET element and the thermistor element in the protection circuit module according to the prior art will be described with reference to FIG.
  • the substrate 9 On one main surface of 40, two FET elements 942 and 943 and a thermistor element 944 are mounted in the vicinity thereof. As shown in FIG. The elements 942 and 943 and the thermistor element 944 are thermally coupled by a silicone resin layer applied therebetween.
  • a silicone resin layer is provided between an electronic element (such as an FET element) that becomes a heat generation source during charging and discharging and a thermal element (thermistor element) that detects the heat.
  • an electronic element such as an FET element
  • a thermal element thermal element
  • the present invention provides a protection circuit capable of reducing the manufacturing cost while maintaining high heat transfer between an electronic element as a heat source and a thermal element that detects the heat.
  • An object is to provide a module and a battery pack provided with the module.
  • a protection circuit module is a module that is inserted in an input / output path of power between a secondary battery and its mounting device, and includes a substrate, an electronic element, A thermal element.
  • the substrate includes a plurality of metal wiring layers and an insulating layer interposed between the metal wiring layers.
  • the electronic element is mounted on one main surface of the substrate and is inserted in the power input / output path.
  • the thermal element is arranged on one main surface (the main surface on the side where the electronic element is mounted) or the other main surface (the main surface opposite to the main surface on which the electronic element is mounted) on the substrate. Yes.
  • the protection circuit module according to the present invention is a plan view of the substrate, the electronic element, and the thermosensitive element in a direction perpendicular to one main surface of the substrate, and When seeing through the insulating layer on the substrate, among the plurality of metal wiring layers on the substrate, A part of the inner metal wiring layer closest to the one main surface with the insulating layer sandwiched between the electronic elements is formed so as to overlap at least a part of the electronic elements and all of the thermal elements. Yes.
  • the thermosensitive element detects the temperature of the electronic element through a part of the metal wiring layer.
  • the battery pack according to the present invention includes one or a plurality of secondary batteries and the protection circuit module according to the present invention having the above-described configuration.
  • the thermal element mounted on the substrate is in a state where all of it overlaps with a part of the inner metal wiring layer closest to the one main surface. For this reason, the heat generated in the electronic element is transmitted to a part of the metal wiring layer and is transmitted to the thermal element.
  • the thermal element since all of the thermal element overlaps with a part of the metal wiring layer, it is not necessary to achieve thermal coupling between the electronic element and the thermal element by forming a silicone resin layer as in the prior art.
  • the heat detection performance of the thermosensitive element can be maintained high.
  • the protection circuit module according to the present invention can reduce the manufacturing cost while maintaining high heat transfer between the electronic element that is a heat source and the thermal element that detects the heat.
  • the battery pack according to the present invention includes the protection circuit module according to the present invention, the heat transfer between the electronic element that is a heat source and the thermal element that detects the heat is maintained high as described above. However, the manufacturing cost can be reduced.
  • the protection circuit module and the battery pack according to the present invention the following variation configurations can be adopted as an example.
  • the electronic element is a switching element
  • other elements such as a resistance element inserted in the power distribution path may be used.
  • the protection circuit module and the battery pack according to the present invention in the above configuration, it is also possible to adopt a configuration in which the second switching element is mounted on the one main surface of the substrate in a state of being spaced from the switching element.
  • the switching element and the second switching element are both FET elements, and a part of the inner metal wiring layer on the substrate serves to connect the drains of the switching element and the second switching element. It is also possible to adopt the configuration of being made. When such a configuration is adopted, heat is transferred to a part of the inner metal wiring layer through the drain of each FET element, so that heat is transferred at high speed with high accuracy.
  • thermosensitive element is disposed between the switching element and the second switching element on the one main surface of the substrate.
  • heat generated by the switching element and the second switching element is transmitted not only by a part of the metal wiring layer of the inner layer but also by radiation, thus ensuring higher detection performance. Is done.
  • a part of the inner metal wiring layer provided for the connection between the drains of the switching element and the second switching element is the switching element.
  • a second region that bulges toward It is also possible to adopt a configuration in which the first region and the second region are continuously formed and the thermal element is disposed at a position corresponding to the upper side of the second region.
  • a conductive land which is a part of the metal wiring layer on the one main surface of the substrate and to which the drains of the switching element and the second switching element are respectively connected, is a part of the inner metal wiring layer of the substrate.
  • each is connected by a plurality of through holes.
  • the thermal element is a chip thermistor element.
  • the thermosensitive element has a configuration including an element body and a lead extending from the element body, all of the element bodies that contribute to heat detection in the element configuration are in the metal layer of the inner layer in plan view. It is sufficient that the arrangement overlaps a part of the wiring layer. That is, the leads do not necessarily have to have overlapping positional relationships.
  • FIG. 4 is a schematic perspective view showing the arrangement relationship of FET elements 142 and 143, thermistor element 144, metal wiring layer 140a2, and the like in protection circuit module 14.
  • FIG. 4 is a schematic cross-sectional view showing a positional relationship among FET elements 142, 143, thermistor element 144, and metal wiring layer 140a2 in the protection circuit module 14.
  • FIG. 4 is a schematic plan view showing a positional relationship between a thermistor element 144 and a thermal fuse element 147 with respect to FET elements 142 and 143.
  • FIG. (A) is a schematic top view which shows the positional relationship of the thermistor element 344 and the thermal fuse element 347 with respect to FET element 142,143 in the protection circuit module which concerns on the modification 2, (b) is based on the modification 3.
  • FIG. 6 is a schematic plan view showing the positional relationship of the thermistor element 444 and the thermal fuse element 447 with respect to the FET elements 142 and 143 in the protection circuit module.
  • FIG. (A) is a top view which shows the positional relationship of FET element 942,943 and thermistor element 944 in the protection circuit module of the battery pack based on a prior art
  • (b) is the sectional drawing.
  • the battery pack 1 has a long exterior case 10 having a length in the X-axis direction that is longer than the width in the Y-axis direction and the height in the Z-axis direction.
  • Three cylindrical unit cells 11, 12, 13 and a protection circuit module 14 connected to these unit cells 11, 12, 13 are accommodated.
  • the three unit cells 11, 12, 13 are both lithium ion secondary batteries, They are arranged in series with the shaft cores combined in the X axis direction.
  • the protection circuit module 14 includes a strip-shaped substrate 140 that is long in the X-axis direction. Arranged along the unit cells 11, 12, and 13. In the protection circuit module 14, an external connection terminal 141 is mounted on the main surface (upper main surface in the Z-axis direction) of the substrate 140 for electrical connection with a mounted device.
  • an external connection terminal 141 is mounted on the main surface (upper main surface in the Z-axis direction) of the substrate 140 for electrical connection with a mounted device.
  • FIG. 1 in order to understand the internal structure of the battery pack 1, originally Z The outer case disposed on the upper side in the axial direction is omitted.
  • FIG. (A) shows the protection circuit module 14 on one main surface (front surface) of the substrate 140.
  • FIG. 2B is a plan view showing the protection circuit module 14 and the substrate 140. It is a top view which shows the other main surface (back surface).
  • a substrate 140 is provided in the protection circuit module 14.
  • a plurality of electronic chips including the FET elements 142 and 142 and the thermistor element 144 are mounted on the front surface, and an external connection terminal 141 is also mounted.
  • one of the FET elements 142 and 143 is an element for charging, and the other is an element for discharging.
  • the thermistor element 144 is arranged in a state of being sandwiched between the FET elements 142 and 143 in the X-axis direction (refer to part A).
  • a thermal fuse element 147 is also disposed below the thermistor element 144 in the Y-axis direction.
  • the thermal fuse element 147 is also an element that detects the temperature of the FET elements 142 and 143 and the like.
  • a control IC for protection is provided on the back surface of the substrate 140.
  • a plurality of electronic chips including the elements 145 and 146 are mounted. FET Each gate of the elements 142 and 143 is connected to one IC element 145, One terminal of the thermistor element 144 is connected to the other IC element 146 (detailed wiring layout and circuit diagram are omitted).
  • the substrate 140 of the protection circuit module 14 includes a plurality of metal wiring layers 140a1, 140b1, 14 0c1, 140d1, 140e1, 140f1, 140g1, 140h1, 140a2, 140b2, 140a3, 140b3, 140a4, 140b4, and insulating layers 140a5, 140a6, 140a7 interposed between the respective layers.
  • the insulating layers 140a5, 140a6, and 140a7 are drawn with two-dot chain lines for convenience of illustration, and the metal wiring layers 140a1, 140b1, and 14 are shown.
  • 0c1, 140d1, 140e1, 140f1, 140g1, 140h1, 140a2, 140b2, 140a3, 140b3, 140a4 and 140b4 are also schematically drawn. Further, illustration of other components on the substrate 140 such as the thermal fuse element 147 is omitted.
  • metal wiring layers 140 a 1, 140 are disposed on the front side of the substrate 14.
  • 140c1, 140d1, 140e1, 140f1, 140g1, 140h1 are formed.
  • the gate 142b of the FET element 142 is connected to the metal wiring layer 140a1
  • the source 142c is connected to the metal wiring layer 140b1.
  • the drain 142d of the FET element 142 is connected to the metal wiring layer 140c1.
  • the drain 143d of the FET element 143 is connected to the metal wiring layer 140f1
  • the gate 143b is connected to the metal wiring layer 140g1
  • the source 143c is connected to the metal wiring layer 140h1.
  • the thermistor element 144 is a chip thermistor element. Terminals 144b and 144c are provided at both ends of a. And metal wiring layer 1 The terminal 144b of the thermistor element 144 is connected to 40d1, and the metal wiring layer 14 is connected. The other terminal 144c is connected to 0e1.
  • metal wiring layers 140a2 and 140b2 are provided in the second layer (the inner layer closest to the front surface) of the substrate 140. Among these, the metal wiring layer 140a2 is Metal wiring layers 140c1, 140f on the front side 1 and a plurality of through holes inserted through the insulating layer 140a5.
  • a metal wiring layer 140b2 is provided on the inner side of the metal wiring layer 140h1 in the Z-axis direction. Between the metal wiring layer 140h1 and the metal wiring layer 140b2, They are connected by a plurality of through holes that pass through the insulating layer 140a5.
  • Metal wiring layers 140a3 and 140b3 are provided in the third layer of the substrate 140.
  • the metal wiring layer 140a3 is connected to the upper metal wiring layer 140a2 by a plurality of through holes that pass through the insulating layer 140a6.
  • the layer 140b3 is connected to the upper metal wiring layer 140b2 by a plurality of through holes that pass through the insulating layer 140a6.
  • Metal wiring layers 140a4 and 140b4 are provided on the back surface of the substrate 140.
  • the metal wiring layer 140a4 includes an inner metal wiring layer 140a3 immediately above the Z-axis direction,
  • the metal wiring layer 1 is connected by a plurality of through holes that pass through the insulating layer 140a7.
  • 40b4 is connected to the inner metal wiring layer 140b3 directly above by a plurality of through-holes that pass through the insulating layer 140a7.
  • FIGS. 4 and 5A Heat Transfer Path from FET Elements 142 and 143 to Thermistor Element 144
  • a heat transfer path from the FET elements 142 and 143 to the thermistor element 144 will be described with reference to FIGS. 4 and 5A.
  • each of the drains 142d, 14 of the FET elements 142, 143 is shown.
  • 3d is connected to the metal wiring layers 140c1 and 140f1, and the metal wiring 140c.
  • 1,140f1 is connected to the inner metal wiring layer 140a2 through the through holes 140i1 and 140j1.
  • the thermistor element 144 is arranged directly above the Z-axis direction with respect to the metal wiring layer 140a2 via an insulating layer (not shown in FIG. 4, refer to FIG. 3).
  • the FET elements 142 and 143 and the thermistor element 14 4 and the metal wiring layer 140a2 are arranged such that a part of the FET elements 142 and 143 overlaps with a part of the lower metal wiring layer 140a2, and the whole thermistor element 144 overlaps with a part of the metal wiring layer 140a2. It is supposed to be.
  • the thermal fuse element 147 is arranged below the thermistor element 144 in the Y-axis direction and overlaps with a part of the metal wiring layer 140a2. Not done.
  • the FET elements 142 Part of the heat generated at 143 is transferred from the drains 142d and 143d to the metal wiring layer 14 It is transmitted to metal wiring layer 140a2 through 0c1, 140f1 and through holes 140i1, 140j1.
  • the thermistor element 144 has a metal wiring layer 1. Heat is transferred from 40a2 through insulating layer 140a5.
  • the thermistor element 144 includes an FET element 1. Since they are arranged in proximity to each other between 42 and 143, heat is transferred to the thermistor element 144 also by radiation. Therefore, in the protection circuit module 14 according to the present embodiment, good thermal coupling between the FET elements 142 and 143 and the thermistor element 144 can be achieved without providing a silicone resin layer as in the prior art shown in FIG. In addition to being able to protect with high accuracy, automation during manufacturing is not hindered. [Modification 1] The configuration of the protection circuit module according to Modification 1 will be described with reference to FIG. Note that the protection circuit module according to this modification has the same configuration as the above embodiment except for the shape of the metal wiring layer 240a2. For this reason, only differences from the above embodiment will be described below.
  • the FET The metal wiring layer 240a2 that connects the drains of the elements 142 and 143 has a shape that bulges downward in the Y-axis direction from the metal wiring layer 140a2 of the protection circuit module 14 according to the above embodiment.
  • the entire thermistor element 144 is overlapped with the metal wiring layer 240a2, which is the same as the above embodiment.
  • the entire temperature fuse element 147 is also made of metal. It overlaps with the wiring layer 240a2. Specifically, a region sandwiched between the FET element 142 and the FET element 143 in the metal wiring layer 140a2 is a first region A1.
  • the thermistor element 144 When the region bulging downward in the Y-axis direction is the second region A2, the thermistor element 144 is disposed above the first region A1 in the Z-axis direction (front side in the drawing), and the thermal fuse element 147 is the second region A2. It is disposed above the area A2 in the Z-axis direction (front side of the sheet).
  • the thermistor element 144 is an FET.
  • the temperature fuse element 147 also has excellent temperature detection characteristics of the FET elements 142 and 143 and the like. Therefore, in this modification, without forming the silicone resin layer, High safety can be ensured.
  • the FET A thermal fuse element 347 is disposed between the elements 142 and 143, and the thermistor element 344 is disposed on the lower side in the Y-axis direction with respect to the thermal fuse element 347.
  • the FET element 142 The metal wiring layer 340a2 connecting the drains of the 143 is the FET element 142,1. 43 1st area
  • the thermal fuse element 347 is used.
  • the thermistor element 344 is formed in the Z region of the second region A12 of the metal wiring layer 340a2. It is arranged on the upper side in the axial direction (front side of the paper).
  • all the thermistor elements 444 are located above the second region A22 in the metal wiring layer 440a2 in the Z-axis direction (front side in the drawing). Instead, only a part thereof is located above the second region A22 in the metal wiring layer 440a2 in the Z-axis direction (front side on the paper surface). However, all of the thermal fuse elements 447 are located above the first region A21 in the metal wiring layer 440a2 in the Z-axis direction (front side in the drawing). For this reason, the thermistor element 444 can obtain a certain degree of heat transfer effect by heat transfer through the metal wiring 440a2. Will fall.
  • the battery pack 1 including the three unit cells 11, 12, and 13 is taken as an example, but the present invention is directed to the number and arrangement of unit cells, and protection against the unit cells.
  • the unit cell is not limited to a lithium ion battery, and a nickel cadmium secondary battery, a nickel hydride secondary battery, or the like can also be adopted. Can also be used, and further, a metal laminate outer battery can be used.
  • the protection circuit module 14 incorporated in the battery pack 1 is taken as an example.
  • the protection circuit module does not necessarily have to be packaged together with the unit cell. That is, it can be a device composed of a single protection circuit module.
  • the shape of the substrate in the protection circuit module is not limited to an elongated strip shape, but may be a square shape, a circular shape, or an elliptical shape.
  • the thermistor element is not particularly mentioned.
  • PTC Physical Tempera
  • NT true Coefficient
  • NTC Negative Te
  • a temperature coefficient element or a thermal fuse may be employed.
  • the temperature of the FET elements 142 and 143 is detected by the thermistor elements 144 and 244.
  • the detection target is other switching elements such as transistor elements, resistance elements, and external connections. It can also be a terminal, connection wiring, or the like.
  • copper (Cu) having high thermal conductivity is desirable, but aluminum (Al), nickel (Ni) plated steel, etc. can also be used.
  • the present invention is useful for realizing a battery pack with a low manufacturing cost while having high quality as a power source for mobile devices and vehicles.
  • Battery pack 10. Exterior case 11, 12, 13. Unit cell 14. Protection circuit module 140. Substrate 141. External connection terminals 142, 143. FET elements 144, 244, 344. Thermistor elements 145 and 146. IC elements 147, 347, 447. Thermal fuse elements 140a1, 140b1, 140c1, 140d1, 140e1, 140f1, 140g 1,140h1,140a2,140b2,140a3,140b3,140a4,14 0b4, 240a2, 340a2, 440a2. Metal wiring layers 140a5, 140a6, 140a7. Insulating layers 140i1, 140j1. Through hole

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Structure Of Printed Boards (AREA)
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Abstract

[Problem] To provide a protective circuit module that can reduce production costs while maintaining high heat transfer between electronic elements that are sources of heat and a heat-sensitive element that detects that heat and to provide a battery pack provided with the same. [Solution] A substrate is formed from insulating layers inserted between metal wiring layers (140b1, ...) and these same metal wiring layers (140b1, ...). When the substrate, FET elements (142, 143), and a thermistor element (144) are viewed in a planar view in the direction of the Z axis, part of the metal wiring layer (140a2) is formed on the substrate in a state that overlaps part of the FET elements (142, 143) and all of the thermistor element (144). The thermistor element (144) detects the temperature of the FET elements (142, 143) via the metal wiring layer (140a2).

Description

保護回路モジュールおよび電池パックProtection circuit module and battery pack
 本発明は、保護回路モジュールおよび電池パックに関し、特に、回路内にお
けるスイッチング素子と感熱素子との熱カップリングに係る構造に関する。
The present invention relates to a protection circuit module and a battery pack, and more particularly to a structure related to thermal coupling between a switching element and a thermal element in a circuit.
 携帯電話機やノートブック型パーソナルコンピュータ(ノートパソコン)な
どのモバイル機器、さらには電動アシスト自転車や電動バイク、および電動自
動車などの普及に伴って、電力供給源としての電池パックが広く用いられてい
る。
 電池パックは、リチウムイオン電池などの二次電池が、保護回路モジュール
などとともにケース内に収納されてなる構成を有する。保護回路モジュールは、
基板にIC素子、FET素子、および外部接続端子などが実装されてなる。ま
た、保護回路モジュールには、外部接続端子やFET素子などの温度を検知す
るサーミスタ素子も備えられている。従来技術に係る保護回路モジュールでの
FET素子とサーミスタ素子との熱カップリング構造について、図7を用い説
明する。
With the spread of mobile devices such as cellular phones and notebook personal computers (notebook personal computers), as well as electric assist bicycles, electric motorcycles, and electric vehicles, battery packs as power supply sources are widely used.
The battery pack has a configuration in which a secondary battery such as a lithium ion battery is housed in a case together with a protection circuit module and the like. The protection circuit module
An IC element, FET element, external connection terminal, and the like are mounted on the substrate. The protection circuit module also includes a thermistor element that detects the temperature of an external connection terminal, an FET element, and the like. A thermal coupling structure of the FET element and the thermistor element in the protection circuit module according to the prior art will be described with reference to FIG.
 図7(a)に示すように、従来技術に係る保護回路モジュールでは、基板9
40の一方の主面上に2つのFET素子942,943と、これらに近接して
サーミスタ素子944とが実装されている。図7(b)に示すように、FET
素子942,943とサーミスタ素子944とは、その間に塗布されたシリコ
ーン樹脂層により、熱カップリングされている。
As shown in FIG. 7A, in the protection circuit module according to the prior art, the substrate 9
On one main surface of 40, two FET elements 942 and 943 and a thermistor element 944 are mounted in the vicinity thereof. As shown in FIG.
The elements 942 and 943 and the thermistor element 944 are thermally coupled by a silicone resin layer applied therebetween.
 このように、従来技術に係る保護回路モジュールでは、充放電時などに発熱
源となる電子素子(FET素子など)と、その熱を検知する感熱素子(サーミ
スタ素子)との間にシリコーン樹脂層を形成することにより、感熱素子の熱検
知精度および検知速度を高くすることがなされている。
Thus, in the protection circuit module according to the prior art, a silicone resin layer is provided between an electronic element (such as an FET element) that becomes a heat generation source during charging and discharging and a thermal element (thermistor element) that detects the heat. By forming, the thermal detection accuracy and detection speed of the thermal element are increased.
特開2004-87851号公報JP-A-2004-87851 特開2010-252538号公報JP 2010-252538 A
 しかしながら、保護回路モジュールの製造時においては、発熱源である電子
素子と感熱素子との熱カップリングのためのシリコーン樹脂層の形成を自動化
することが困難であり、手作業が必要である。このため、シリコーン樹脂層の
形成における作業の必要性から、製造コストの低減の障害となる。
 本発明は、上記のような問題に鑑み、発熱源である電子素子とその熱を検知
する感熱素子との間の熱伝達性を高く維持しながら、製造コストの低減を図る
ことができる保護回路モジュールおよびこれを備えた電池パックを提供するこ
とを目的とする。
However, at the time of manufacturing the protection circuit module, it is difficult to automate the formation of the silicone resin layer for the thermal coupling between the electronic element that is a heat source and the thermosensitive element, and manual work is required. For this reason, it becomes an obstacle of reduction of manufacturing cost from the necessity of the operation | work in formation of a silicone resin layer.
In view of the above problems, the present invention provides a protection circuit capable of reducing the manufacturing cost while maintaining high heat transfer between an electronic element as a heat source and a thermal element that detects the heat. An object is to provide a module and a battery pack provided with the module.
 上記目的を達成するために、本発明は、次の構成を採用することを特徴とす
る。
 本発明に係る保護回路モジュールは、二次電池とその装着機器との間におけ
る電力の入出力経路中に介挿されるモジュールであって、基板と、電子素子と、
感熱素子とを備える。
 基板は、複数の金属配線層、および当該金属配線層間に介挿された絶縁層か
らなる。
In order to achieve the above object, the present invention employs the following configuration.
A protection circuit module according to the present invention is a module that is inserted in an input / output path of power between a secondary battery and its mounting device, and includes a substrate, an electronic element,
A thermal element.
The substrate includes a plurality of metal wiring layers and an insulating layer interposed between the metal wiring layers.
 電子素子は、基板の一方の主面に実装され、電力の入出力経路中に介挿され
ている。
 感熱素子は、基板における一方の主面(電子素子が実装された側の主面)ま
たは他方の主面(電子素子が実装された側の主面とは反対側の主面)に配置さ
れている。
 本発明に係る保護回路モジュールは、上記において、基板および電子素子お
よび感熱素子を、基板の一方の主面に対して直交する方向から平面視し、且つ、
基板における前記絶縁層を透視するとき、基板における複数の金属配線層の内、
電子素子に対して絶縁層を間に挟んだ上記一方の主面に最も近い内層の金属配
線層の一部が、電子素子の少なくとも一部と感熱素子の全部とに重複する状態
で形成されている。そして、感熱素子は、金属配線層の一部を介して電子素子
の温度を検知することを特徴とする。
The electronic element is mounted on one main surface of the substrate and is inserted in the power input / output path.
The thermal element is arranged on one main surface (the main surface on the side where the electronic element is mounted) or the other main surface (the main surface opposite to the main surface on which the electronic element is mounted) on the substrate. Yes.
The protection circuit module according to the present invention is a plan view of the substrate, the electronic element, and the thermosensitive element in a direction perpendicular to one main surface of the substrate, and
When seeing through the insulating layer on the substrate, among the plurality of metal wiring layers on the substrate,
A part of the inner metal wiring layer closest to the one main surface with the insulating layer sandwiched between the electronic elements is formed so as to overlap at least a part of the electronic elements and all of the thermal elements. Yes. The thermosensitive element detects the temperature of the electronic element through a part of the metal wiring layer.
 また、本発明に係る電池パックでは、1または複数の二次電池と、上記構成
の本発明に係る保護回路モジュールを備える、ことを特徴とする。
In addition, the battery pack according to the present invention includes one or a plurality of secondary batteries and the protection circuit module according to the present invention having the above-described configuration.
 本発明に係る保護回路モジュールでは、基板などを平面視する場合において、
基板に実装された感熱素子が、上記一方の主面に最も近い内層の金属配線層の
一部に対して、その全部が重複する状態となっている。このため、電子素子で
発生した熱は、上記金属配線層の一部に伝達され、感熱素子へと伝達される。
この際、感熱素子の全部が上記金属配線層の一部に重複しているので、従来技
術のように電子素子と感熱素子との間をシリコーン樹脂層の形成により熱カッ
プリングを図らなくても、感熱素子における熱検知性能を高く維持することが
できる。
In the protection circuit module according to the present invention, when the substrate or the like is viewed in plan view,
The thermal element mounted on the substrate is in a state where all of it overlaps with a part of the inner metal wiring layer closest to the one main surface. For this reason, the heat generated in the electronic element is transmitted to a part of the metal wiring layer and is transmitted to the thermal element.
At this time, since all of the thermal element overlaps with a part of the metal wiring layer, it is not necessary to achieve thermal coupling between the electronic element and the thermal element by forming a silicone resin layer as in the prior art. The heat detection performance of the thermosensitive element can be maintained high.
 また、本発明に係る保護回路モジュールの構成においては、その製造時にお
いて手作業でのシリコーン樹脂層の形成が必要なく、製造における自動化をよ
り推進することができ、製造コストの低減を図ることが可能である。
 従って、本発明に係る保護回路モジュールは、発熱源である電子素子とその
熱を検知する感熱素子との間の熱伝達性を高く維持しながら、製造コストの低
減を図ることができる。
Further, in the configuration of the protection circuit module according to the present invention, it is not necessary to manually form a silicone resin layer at the time of manufacturing, and automation in manufacturing can be further promoted, and manufacturing cost can be reduced. Is possible.
Therefore, the protection circuit module according to the present invention can reduce the manufacturing cost while maintaining high heat transfer between the electronic element that is a heat source and the thermal element that detects the heat.
 また、本発明に係る電池パックは、本発明に係る保護回路モジュールを備え
るので、上記同様に、発熱源である電子素子とその熱を検知する感熱素子との
間の熱伝達性を高く維持しながら、製造コストの低減を図ることができる。
 本発明に係る保護回路モジュールおよび電池パックでは、一例として、次の
ようなバリエーション構成を採用することができる。
In addition, since the battery pack according to the present invention includes the protection circuit module according to the present invention, the heat transfer between the electronic element that is a heat source and the thermal element that detects the heat is maintained high as described above. However, the manufacturing cost can be reduced.
In the protection circuit module and the battery pack according to the present invention, the following variation configurations can be adopted as an example.
 本発明に係る保護回路モジュールおよび電池パックでは、上記構成において、
電子素子がスイッチング素子である、という構成を採用することができる。た
だし、スイッチング素子以外にも、電力流通経路中に介挿される抵抗素子など
の他の素子とすることもできる。
 本発明に係る保護回路モジュールおよび電池パックでは、上記構成において、
基板における上記一方の主面に、上記スイッチング素子に対して間隔をあけた
状態で、第2スイッチング素子が実装されている、という構成を採用すること
もできる。この場合において、上記スイッチング素子および上記第2スイッチ
ング素子が、ともにFET素子であり、基板における上記内層の金属配線層の
一部が、上記スイッチング素子と上記第2スイッチング素子のドレイン同士の
接続に供されている、という構成を採用することもできる。このような構成を
採用する場合には、各FET素子のドレインを通して上記内層の金属配線層
の一部に対して熱が伝達されるので、高精度で速い速度で熱が伝達される。
In the protection circuit module and the battery pack according to the present invention, in the above configuration,
A configuration in which the electronic element is a switching element can be employed. However, in addition to the switching element, other elements such as a resistance element inserted in the power distribution path may be used.
In the protection circuit module and the battery pack according to the present invention, in the above configuration,
It is also possible to adopt a configuration in which the second switching element is mounted on the one main surface of the substrate in a state of being spaced from the switching element. In this case, the switching element and the second switching element are both FET elements, and a part of the inner metal wiring layer on the substrate serves to connect the drains of the switching element and the second switching element. It is also possible to adopt the configuration of being made. When such a configuration is adopted, heat is transferred to a part of the inner metal wiring layer through the drain of each FET element, so that heat is transferred at high speed with high accuracy.
 本発明に係る保護回路モジュールおよび電池パックでは、上記構成において、
感熱素子が、基板における上記一方の主面上で、スイッチング素子と第2スイ
ッチング素子との間に配置されている、という構成を採用することもできる。
このような構成を採用する場合には、スイッチング素子および第2スイッチン
グ素子で発した熱が、上記内層の金属配線層の一部だけでなく、輻射により伝
達されるので、より高い検知性能が確保される。
In the protection circuit module and the battery pack according to the present invention, in the above configuration,
It is also possible to adopt a configuration in which the thermosensitive element is disposed between the switching element and the second switching element on the one main surface of the substrate.
When such a configuration is adopted, heat generated by the switching element and the second switching element is transmitted not only by a part of the metal wiring layer of the inner layer but also by radiation, thus ensuring higher detection performance. Is done.
 あるいは、本発明に係る保護回路モジュールおよび電池パックでは、上記構
成において、スイッチング素子と第2スイッチング素子とのドレイン同士の接
続に供されている上記内層の金属配線層の一部が、スイッチング素子と第2ス
イッチング素子のドレイン同士の間の第1領域と、当該第1領域からドレイン
同士を結ぶ方向(スイッチング素子と第2スイッチング素子とを最短で結ぶ仮
想直線の延伸方向)に対して交差する方向に向けて膨出した第2領域とを有し、
第1領域と第2領域とが連続形成されているとともに、感熱素子が第2領域の
上方に相当する位置に配置されているという構成を採用することもできる。
このような構成を採用する場合にあっても、第1領域に対して連続形成された
第2領域にスイッチング素子および第2スイッチング素子で発した熱が高効率
に伝導され、結果として感熱素子にも高効率に伝達される。よって、このよう
な構成を採用した場合にも、感熱素子の高い検知性能が確保される。
Alternatively, in the protection circuit module and the battery pack according to the present invention, in the above configuration, a part of the inner metal wiring layer provided for the connection between the drains of the switching element and the second switching element is the switching element. A direction intersecting the first region between the drains of the second switching element and the direction connecting the drains from the first region (the extending direction of the imaginary straight line connecting the switching element and the second switching element at the shortest). A second region that bulges toward
It is also possible to adopt a configuration in which the first region and the second region are continuously formed and the thermal element is disposed at a position corresponding to the upper side of the second region.
Even when such a configuration is adopted, the heat generated by the switching element and the second switching element is conducted with high efficiency to the second region continuously formed with respect to the first region, and as a result, the thermal element Is also transmitted with high efficiency. Therefore, even when such a configuration is adopted, high detection performance of the thermal element is ensured.
 本発明に係る保護回路モジュールおよび電池パックでは、上記構成において、
基板の上記一方の主面における上記金属配線層の一部であり、上記スイッチン
グ素子および上記第2スイッチング素子のドレインがそれぞれ接続される導電
ランドが、基板における上記内層の金属配線層の一部に対して、各々複数のス
ルーホールにより接続されている、という構成を採用することもできる。この
ような構成を採用する場合には、スイッチング素子および第2スイッチング素
子で発した熱が、スルーホールにおけるプラグを介して上記内層の金属配線層
の一部される。よって、このような構成を採用する場合にも、感熱素子のさら
なる検知性能の向上を図ることができる。
In the protection circuit module and the battery pack according to the present invention, in the above configuration,
A conductive land, which is a part of the metal wiring layer on the one main surface of the substrate and to which the drains of the switching element and the second switching element are respectively connected, is a part of the inner metal wiring layer of the substrate. On the other hand, it is also possible to adopt a configuration in which each is connected by a plurality of through holes. When such a configuration is adopted, the heat generated by the switching element and the second switching element is part of the inner metal wiring layer through the plug in the through hole. Therefore, even when such a configuration is adopted, the detection performance of the thermal element can be further improved.
 本発明に係る保護回路モジュールおよび電池パックでは、上記構成において、
感熱素子がチップサーミスタ素子である、という構成を採用することができる。
なお、感熱素子が、素子本体と、これから延出されたリードとからなる構成の
場合には、素子の構成の内、熱検知に寄与する素子本体の全部が、平面視にお
いて、上記内層の金属配線層の一部に対して重複する配置となっていればよい。
即ち、リードについては、必ずしも重複する位置関係をとらなくてもよい。
In the protection circuit module and the battery pack according to the present invention, in the above configuration,
It is possible to adopt a configuration in which the thermal element is a chip thermistor element.
In the case where the thermosensitive element has a configuration including an element body and a lead extending from the element body, all of the element bodies that contribute to heat detection in the element configuration are in the metal layer of the inner layer in plan view. It is sufficient that the arrangement overlaps a part of the wiring layer.
That is, the leads do not necessarily have to have overlapping positional relationships.
発明の実施の形態に係る電池パック1の構成を示す模式斜視図である。It is a model perspective view which shows the structure of the battery pack 1 which concerns on embodiment of invention. 電池パック1における保護回路モジュール14の外観を示す模式平面図である。2 is a schematic plan view showing an appearance of a protection circuit module 14 in the battery pack 1. FIG. 保護回路モジュール14におけるFET素子142,143、サーミスタ素子144、および金属配線層140a2などの配置関係を示す模式斜視図である。4 is a schematic perspective view showing the arrangement relationship of FET elements 142 and 143, thermistor element 144, metal wiring layer 140a2, and the like in protection circuit module 14. FIG. 保護回路モジュール14におけるFET素子142,143、サーミスタ素子144、および金属配線層140a2の配置関係を示す模式断面図である。4 is a schematic cross-sectional view showing a positional relationship among FET elements 142, 143, thermistor element 144, and metal wiring layer 140a2 in the protection circuit module 14. FIG. (a)は、保護回路モジュール14におけるFET素子142,143に対するサーミスタ素子144および温度ヒューズ素子147の位置関係を示す模式平面図であり、(b)は、変形例1に係る保護回路モジュールでのFET素子142,143に対するサーミスタ素子144および温度ヒューズ素子147の位置関係を示す模式平面図である。(A) is a schematic top view which shows the positional relationship of the thermistor element 144 and the thermal fuse element 147 with respect to FET element 142,143 in the protection circuit module 14, (b) is in the protection circuit module which concerns on the modification 1. FIG. 4 is a schematic plan view showing a positional relationship between a thermistor element 144 and a thermal fuse element 147 with respect to FET elements 142 and 143. FIG. (a)は、変形例2に係る保護回路モジュールでのFET素子142,143に対するサーミスタ素子344および温度ヒューズ素子347の位置関係を示す模式平面図であり、(b)は、変形例3に係る保護回路モジュールでのFET素子142,143に対するサーミスタ素子444および温度ヒューズ素子447の位置関係を示す模式平面図である。(A) is a schematic top view which shows the positional relationship of the thermistor element 344 and the thermal fuse element 347 with respect to FET element 142,143 in the protection circuit module which concerns on the modification 2, (b) is based on the modification 3. 6 is a schematic plan view showing the positional relationship of the thermistor element 444 and the thermal fuse element 447 with respect to the FET elements 142 and 143 in the protection circuit module. FIG. (a)は、従来技術に係る電池パックの保護回路モジュールにおけるFET素子942,943とサーミスタ素子944との位置関係を示す平面図であり、(b)は、その断面図である。(A) is a top view which shows the positional relationship of FET element 942,943 and thermistor element 944 in the protection circuit module of the battery pack based on a prior art, (b) is the sectional drawing.
 以下では、本発明を実施するための形態について、図面を参酌しながら説明
する。なお、以下で示す具体例は、本発明の構成およびその構成から奏される
作用・効果を分かりやすく説明するために用いる一例であって、本発明は、発
明の本質とする構成部分以外について、以下の具体例に何ら限定を受けるもの
ではない。
[実施の形態]
 1.電池パック1の全体構成
 電池パック1の全体構成について、図1を用い説明する。
Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In addition, the specific example shown below is an example used for easily explaining the configuration of the present invention and the operations and effects produced from the configuration, and the present invention is not limited to the components essential to the invention. The following specific examples are not limited at all.
[Embodiment]
1. Overall Configuration of Battery Pack 1 The overall configuration of the battery pack 1 will be described with reference to FIG.
 図1に示すように、本実施の形態に係る電池パック1は、Y軸方向の幅およ
びZ軸方向の高さに比べて、X軸方向の長さが長い長尺状の外装ケース10に、
3本の円筒形の素電池11,12,13と、これら素電池11,12,13に
接続された保護回路モジュール14とが収納されている。
 3本の素電池11,12,13は、ともにリチウムイオン二次電池であって、
X軸方向に軸芯を併せた状態で直列配置されている。
As shown in FIG. 1, the battery pack 1 according to the present embodiment has a long exterior case 10 having a length in the X-axis direction that is longer than the width in the Y-axis direction and the height in the Z-axis direction. ,
Three cylindrical unit cells 11, 12, 13 and a protection circuit module 14 connected to these unit cells 11, 12, 13 are accommodated.
The three unit cells 11, 12, 13 are both lithium ion secondary batteries,
They are arranged in series with the shaft cores combined in the X axis direction.
 保護回路モジュール14は、X軸方向に長い短冊状の基板140を有し、3
本の素電池11,12,13に沿った状態で配置されている。保護回路モジュ
ール14においては、基板140の主面(Z軸方向上側主面)に、装着機器と
の電気接続に供される外部接続端子141が実装されている。
 なお、図1においては、電池パック1の内部構造が分かるように、本来、Z
軸方向上側に配される外装ケースを省略して図示している。
The protection circuit module 14 includes a strip-shaped substrate 140 that is long in the X-axis direction.
Arranged along the unit cells 11, 12, and 13. In the protection circuit module 14, an external connection terminal 141 is mounted on the main surface (upper main surface in the Z-axis direction) of the substrate 140 for electrical connection with a mounted device.
In addition, in FIG. 1, in order to understand the internal structure of the battery pack 1, originally Z
The outer case disposed on the upper side in the axial direction is omitted.
 2.保護回路モジュール14の概略構成
 保護回路モジュール14の概略構成について、図2を用い説明する。図2
(a)は、保護回路モジュール14を、基板140の一方の主面(オモテ面)
を示す平面図であり、図2(b)は、保護回路モジュール14を、基板140
の他方の主面(裏面)を示す平面図である。
2. Schematic Configuration of Protection Circuit Module 14 A schematic configuration of the protection circuit module 14 will be described with reference to FIG. FIG.
(A) shows the protection circuit module 14 on one main surface (front surface) of the substrate 140.
FIG. 2B is a plan view showing the protection circuit module 14 and the substrate 140.
It is a top view which shows the other main surface (back surface).
 図2(a)に示すように、保護回路モジュール14においては、基板140
のオモテ面に、FET素子142,142およびサーミスタ素子144を含む
複数の電子チップが実装されており、また、外部接続端子141も実装されて
いる。
 ここで、FET素子142,143の内の一方は、充電用の素子であり、他
方が放電用の素子である。そして、サーミスタ素子144は、X軸方向におい
てFET素子142,143の間に挟まれた状態で配置されている(A部を参
照)。
As shown in FIG. 2A, in the protection circuit module 14, a substrate 140 is provided.
A plurality of electronic chips including the FET elements 142 and 142 and the thermistor element 144 are mounted on the front surface, and an external connection terminal 141 is also mounted.
Here, one of the FET elements 142 and 143 is an element for charging, and the other is an element for discharging. The thermistor element 144 is arranged in a state of being sandwiched between the FET elements 142 and 143 in the X-axis direction (refer to part A).
 また、図2のA部に示すように、サーミスタ素子144に対して、Y軸方向
下方には温度ヒューズ素子147も配されている。温度ヒューズ素子147も
FET素子142,143などの温度を検知する素子である。
 図2(b)に示すように、基板140の裏面には、保護に係る制御用のIC
素子145,146を含む複数の電子チップが実装されている。なお、FET
素子142,143の各ゲートは、一方のIC素子145に接続されており、
サーミスタ素子144の一方の端子は、他方のIC素子146に接続されてい
る(詳細な配線レイアウトおよび回路図は省略)。
2, a thermal fuse element 147 is also disposed below the thermistor element 144 in the Y-axis direction. The thermal fuse element 147 is also an element that detects the temperature of the FET elements 142 and 143 and the like.
As shown in FIG. 2B, a control IC for protection is provided on the back surface of the substrate 140.
A plurality of electronic chips including the elements 145 and 146 are mounted. FET
Each gate of the elements 142 and 143 is connected to one IC element 145,
One terminal of the thermistor element 144 is connected to the other IC element 146 (detailed wiring layout and circuit diagram are omitted).
 3.FET素子142,143とサーミスタ素子144
 FET素子142,143とサーミスタ素子144との熱カップリングに係
る構成について、図3を用い説明する。なお、本実施の形態に係る保護回路モ
ジュール14の基板140は、複数の金属配線層140a1,140b1,14
0c1,140d1,140e1,140f1,140g1,140h1,140a2,
140b2,140a3,140b3,140a4,140b4と、各層間に介挿され
た絶縁層140a5,140a6,140a7とからなる構成を有する。図3では、
基板140の構成の内、絶縁層140a5,140a6,140a7については図
示の都合上、二点鎖線で描いており、金属配線層140a1,140b1,14
0c1,140d1,140e1,140f1,140g1,140h1,140a2,
140b2,140a3,140b3,140a4,140b4についても模式的に描
いている。また、温度ヒューズ素子147などの基板140における他の部品
については、図示を省略している。
3. FET elements 142 and 143 and thermistor element 144
A configuration relating to thermal coupling between the FET elements 142 and 143 and the thermistor element 144 will be described with reference to FIG. The substrate 140 of the protection circuit module 14 according to the present embodiment includes a plurality of metal wiring layers 140a1, 140b1, 14
0c1, 140d1, 140e1, 140f1, 140g1, 140h1, 140a2,
140b2, 140a3, 140b3, 140a4, 140b4, and insulating layers 140a5, 140a6, 140a7 interposed between the respective layers. In FIG.
Of the configuration of the substrate 140, the insulating layers 140a5, 140a6, and 140a7 are drawn with two-dot chain lines for convenience of illustration, and the metal wiring layers 140a1, 140b1, and 14 are shown.
0c1, 140d1, 140e1, 140f1, 140g1, 140h1, 140a2,
140b2, 140a3, 140b3, 140a4 and 140b4 are also schematically drawn. Further, illustration of other components on the substrate 140 such as the thermal fuse element 147 is omitted.
 図3に示すように、基板14のオモテ面には、金属配線層140a1,140
b1,140c1,140d1,140e1,140f1,140g1,140h1が形
成されている。このうち、金属配線層140a1にはFET素子142のゲート
142bが接続され、金属配線層140b1にはソース142cが接続されてい
る。また、金属配線層140c1にはFET素子142のドレイン142dが接
続されている。同様に、金属配線層140f1にはFET素子143のドレイン
143dが接続され、金属配線層140g1にはゲート143bが接続され、金
属配線層140h1にはソース143cが接続されている。
As shown in FIG. 3, metal wiring layers 140 a 1, 140 are disposed on the front side of the substrate 14.
b1, 140c1, 140d1, 140e1, 140f1, 140g1, 140h1 are formed. Among these, the gate 142b of the FET element 142 is connected to the metal wiring layer 140a1, and the source 142c is connected to the metal wiring layer 140b1. The drain 142d of the FET element 142 is connected to the metal wiring layer 140c1. Similarly, the drain 143d of the FET element 143 is connected to the metal wiring layer 140f1, the gate 143b is connected to the metal wiring layer 140g1, and the source 143c is connected to the metal wiring layer 140h1.
 サーミスタ素子144は、チップサーミスタ素子であって、素子本体144
aの両端に端子144b,144cが設けられている。そして、金属配線層1
40d1にはサーミスタ素子144の端子144bが接続され、金属配線層14
0e1には他方の端子144cが接続されている。
 次に、図3に示すように、基板140における2層目(オモテ面に最も近い
側の内層)には、金属配線層140a2,140b2が設けられており、このう
ち、金属配線層140a2は、オモテ面における金属配線層140c1,140f
1と、絶縁層140a5を挿通する複数のスルーホールにより接続されている。
また、金属配線層140h1のZ軸方向内方には、金属配線層140b2が設け
られている。金属配線層140h1と金属配線層140b2との間についても、
絶縁層140a5を挿通する複数のスルーホールにより接続されている。
The thermistor element 144 is a chip thermistor element.
Terminals 144b and 144c are provided at both ends of a. And metal wiring layer 1
The terminal 144b of the thermistor element 144 is connected to 40d1, and the metal wiring layer 14 is connected.
The other terminal 144c is connected to 0e1.
Next, as shown in FIG. 3, metal wiring layers 140a2 and 140b2 are provided in the second layer (the inner layer closest to the front surface) of the substrate 140. Among these, the metal wiring layer 140a2 is Metal wiring layers 140c1, 140f on the front side
1 and a plurality of through holes inserted through the insulating layer 140a5.
A metal wiring layer 140b2 is provided on the inner side of the metal wiring layer 140h1 in the Z-axis direction. Between the metal wiring layer 140h1 and the metal wiring layer 140b2,
They are connected by a plurality of through holes that pass through the insulating layer 140a5.
 基板140の3層目には、金属配線層140a3,140b3が設けられてお
り、金属配線層140a3は上方の金属配線層140a2と、絶縁層140a6を
挿通する複数のスルーホールにより接続され、金属配線層140b3は上方の金
属配線層140b2と、絶縁層140a6を挿通する複数のスルーホールにより
接続されている。
 基板140の裏面には、金属配線層140a4,140b4が設けられており、
金属配線層140a4はZ軸方向直上における内層の金属配線層140a3と、
絶縁層140a7を挿通する複数のスルーホールにより接続され、金属配線層1
40b4は直上内層の金属配線層140b3と、絶縁層140a7を挿通する複数
のスルーホールにより接続されている。
Metal wiring layers 140a3 and 140b3 are provided in the third layer of the substrate 140. The metal wiring layer 140a3 is connected to the upper metal wiring layer 140a2 by a plurality of through holes that pass through the insulating layer 140a6. The layer 140b3 is connected to the upper metal wiring layer 140b2 by a plurality of through holes that pass through the insulating layer 140a6.
Metal wiring layers 140a4 and 140b4 are provided on the back surface of the substrate 140.
The metal wiring layer 140a4 includes an inner metal wiring layer 140a3 immediately above the Z-axis direction,
The metal wiring layer 1 is connected by a plurality of through holes that pass through the insulating layer 140a7.
40b4 is connected to the inner metal wiring layer 140b3 directly above by a plurality of through-holes that pass through the insulating layer 140a7.
 4.FET素子142,143からサーミスタ素子144への熱伝達経路
 FET素子142,143からサーミスタ素子144への熱伝達経路につい
て、図4および図5(a)を用い説明する。
 図4に示すように、FET素子142,143の各ドレイン142d,14
3dは、金属配線層140c1,140f1に接続されており、金属配線140c
1,140f1は、スルーホール140i1,140j1を介して直下内層の金属配
線層140a2に接続されている。そして、サーミスタ素子144は、金属配線
層140a2に対しては、絶縁層(図4では、図示を省略。図3を参照。)を介
し、そのZ軸方向直上に配置されている。
4). Heat Transfer Path from FET Elements 142 and 143 to Thermistor Element 144 A heat transfer path from the FET elements 142 and 143 to the thermistor element 144 will be described with reference to FIGS. 4 and 5A.
As shown in FIG. 4, each of the drains 142d, 14 of the FET elements 142, 143 is shown.
3d is connected to the metal wiring layers 140c1 and 140f1, and the metal wiring 140c.
1,140f1 is connected to the inner metal wiring layer 140a2 through the through holes 140i1 and 140j1. The thermistor element 144 is arranged directly above the Z-axis direction with respect to the metal wiring layer 140a2 via an insulating layer (not shown in FIG. 4, refer to FIG. 3).
 図5(a)に示すように、FET素子142,143とサーミスタ素子14
4、および金属配線層140a2の配置は、FET素子142,143の一部が
下方の金属配線層140a2の一部と重複し、且つ、サーミスタ素子144の全
部が金属配線層140a2の一部と重複するようになっている。
 なお、図5(a)に示すように、本実施の形態においては、温度ヒューズ素
子147は、サーミスタ素子144に対してY軸方向下方に配されており、金
属配線層140a2の一部と重複していない。
As shown in FIG. 5A, the FET elements 142 and 143 and the thermistor element 14
4 and the metal wiring layer 140a2 are arranged such that a part of the FET elements 142 and 143 overlaps with a part of the lower metal wiring layer 140a2, and the whole thermistor element 144 overlaps with a part of the metal wiring layer 140a2. It is supposed to be.
As shown in FIG. 5A, in the present embodiment, the thermal fuse element 147 is arranged below the thermistor element 144 in the Y-axis direction and overlaps with a part of the metal wiring layer 140a2. Not done.
 以上の構成により、保護回路モジュール14においては、FET素子142,
143で発した熱の一部が、ドレイン142d,143dから金属配線層14
0c1,140f1、およびスルーホール140i1,140j1を介して金属配線
層140a2に伝達される。そして、サーミスタ素子144には、金属配線層1
40a2から絶縁層140a5を介して熱が伝達される。
With the above configuration, in the protection circuit module 14, the FET elements 142,
Part of the heat generated at 143 is transferred from the drains 142d and 143d to the metal wiring layer 14
It is transmitted to metal wiring layer 140a2 through 0c1, 140f1 and through holes 140i1, 140j1. The thermistor element 144 has a metal wiring layer 1.
Heat is transferred from 40a2 through insulating layer 140a5.
 また、図2および図3に示す通り、サーミスタ素子144は、FET素子1
42,143の間において、それらに近接した状態で配置されているので、輻
射によっても熱がサーミスタ素子144へと伝達される。
 従って、本実施の形態に係る保護回路モジュール14では、図7に示す従来
技術のようなシリコーン樹脂層を設けなくても、FET素子142,143と
サーミスタ素子144との間の良好な熱カップリングを図ることができ、高い
精度での保護が可能であるとともに、製造時における自動化を阻害することも
ない。
[変形例1]
 変形例1に係る保護回路モジュールの構成について、図5(b)を用い説明
する。なお、本変形例に係る保護回路モジュールでは、上記実施の形態に対し
て、金属配線層240a2の形状を除き、同一構成を有する。このため、以下で
は、上記実施の形態との差異点のみを説明する。
Further, as shown in FIGS. 2 and 3, the thermistor element 144 includes an FET element 1.
Since they are arranged in proximity to each other between 42 and 143, heat is transferred to the thermistor element 144 also by radiation.
Therefore, in the protection circuit module 14 according to the present embodiment, good thermal coupling between the FET elements 142 and 143 and the thermistor element 144 can be achieved without providing a silicone resin layer as in the prior art shown in FIG. In addition to being able to protect with high accuracy, automation during manufacturing is not hindered.
[Modification 1]
The configuration of the protection circuit module according to Modification 1 will be described with reference to FIG. Note that the protection circuit module according to this modification has the same configuration as the above embodiment except for the shape of the metal wiring layer 240a2. For this reason, only differences from the above embodiment will be described below.
 図5(b)に示すように、本変形例に係る保護回路モジュールでは、FET
素子142,143のドレイン同士を接続する金属配線層240a2が上記実施
の形態に係る保護回路モジュール14の金属配線層140a2よりも、Y軸方向
下側に膨出した形状となっている。そして、平面視において、サーミスタ素子
144の全体が金属配線層240a2に重複している点は、上記実施の形態と同
じであるが、本変形例では、温度ヒューズ素子147についても、その全体が
金属配線層240a2に重複している。具体的には、金属配線層140a2につ
いて、FET素子142とFET素子143とで挟まれる領域を第1領域A1
とし、Y軸方向下側に膨出した領域を第2領域A2とする場合、サーミスタ素
子144は第1領域A1のZ軸方向上方(紙面手前側)に配置され、温度ヒュ
ーズ素子147は第2領域A2のZ軸方向上方(紙面手前側)に配置されてい
る。
As shown in FIG. 5B, in the protection circuit module according to this modification, the FET
The metal wiring layer 240a2 that connects the drains of the elements 142 and 143 has a shape that bulges downward in the Y-axis direction from the metal wiring layer 140a2 of the protection circuit module 14 according to the above embodiment. In the plan view, the entire thermistor element 144 is overlapped with the metal wiring layer 240a2, which is the same as the above embodiment. However, in the present modification, the entire temperature fuse element 147 is also made of metal. It overlaps with the wiring layer 240a2. Specifically, a region sandwiched between the FET element 142 and the FET element 143 in the metal wiring layer 140a2 is a first region A1.
When the region bulging downward in the Y-axis direction is the second region A2, the thermistor element 144 is disposed above the first region A1 in the Z-axis direction (front side in the drawing), and the thermal fuse element 147 is the second region A2. It is disposed above the area A2 in the Z-axis direction (front side of the sheet).
 以上のような構成を採用する本変形例では、サーミスタ素子144がFET
素子142,143の温度検知に優れる点は上記同様であるのに加えて、温度
ヒューズ素子147についてもFET素子142,143などの温度検知特性
が優れている。よって、本変形例では、シリコーン樹脂層を形成しなくても、
高い安全性を確保することがきる。
[変形例2]
 変形例2に係る保護回路モジュールの構成について、図6(a)を用い説明
する。図6(a)では、保護回路モジュールの構成の内、図5(a)および図
5(b)に相当する部分だけを抜き出して描いている。
In this modification employing the above-described configuration, the thermistor element 144 is an FET.
In addition to the same point as described above for the temperature detection of the elements 142 and 143, the temperature fuse element 147 also has excellent temperature detection characteristics of the FET elements 142 and 143 and the like. Therefore, in this modification, without forming the silicone resin layer,
High safety can be ensured.
[Modification 2]
A configuration of the protection circuit module according to Modification 2 will be described with reference to FIG. In FIG. 6A, only the part corresponding to FIG. 5A and FIG. 5B is extracted from the configuration of the protection circuit module.
 図6(a)に示すように、本変形例に係る保護回路モジュールでは、FET
素子142,143の間に、温度ヒューズ素子347が配置されており、サー
ミスタ素子344については、温度ヒューズ素子347に対してY軸方向下側
に配置されている。
 また、図6(a)に示すように、本変形例においても、FET素子142,
143のドレイン同士を接続する金属配線層340a2がFET素子142,1
43間の第1領域A11と、当該領域よりもY軸方向下側に膨出した第2領域A
12とを有し構成されている。そして、本変形例では、温度ヒューズ素子347
は、金属配線層340a2の第1領域A11のZ軸方向上方(紙面手前側)に配
置され、サーミスタ素子344は、金属配線層340a2の第2領域A12のZ
軸方向上方(紙面手前側)に配置されている。
As shown in FIG. 6 (a), in the protection circuit module according to this modification, the FET
A thermal fuse element 347 is disposed between the elements 142 and 143, and the thermistor element 344 is disposed on the lower side in the Y-axis direction with respect to the thermal fuse element 347.
In addition, as shown in FIG. 6A, the FET element 142,
The metal wiring layer 340a2 connecting the drains of the 143 is the FET element 142,1.
43 1st area | region A11 and 2nd area | region A which bulged below the Y-axis direction rather than the said area | region
12 and is configured. In this modification, the thermal fuse element 347 is used.
Is disposed above the first region A11 of the metal wiring layer 340a2 in the Z-axis direction (front side in the drawing), and the thermistor element 344 is formed in the Z region of the second region A12 of the metal wiring layer 340a2.
It is arranged on the upper side in the axial direction (front side of the paper).
 以上のような構成を採用する本変形例においても、サーミスタ素子344お
よび温度ヒューズ素子347がともに金属配線層340a2の直上に位置するた
め、FET素子142,143で発した熱が、高効率にサーミスタ素子344
および温度ヒューズ素子347へと伝達され、シリコーン樹脂層を形成しなく
てもよい点は、上記同様である。
[変形例3]
 変形例3に係る保護回路モジュールの構成について、図6(b)を用い説明
する。図6(b)でも、保護回路モジュールの構成の内、図5(a)および図
5(b)、さらに図6(a)に相当する部分だけを抜き出して描いている。
Also in this modified example employing the above-described configuration, since the thermistor element 344 and the thermal fuse element 347 are both located immediately above the metal wiring layer 340a2, the heat generated by the FET elements 142 and 143 is highly efficient. Element 344
As described above, it is transmitted to the thermal fuse element 347 and the silicone resin layer need not be formed.
[Modification 3]
A configuration of the protection circuit module according to Modification 3 will be described with reference to FIG. Also in FIG. 6B, only the portion corresponding to FIGS. 5A and 5B and FIG. 6A is extracted from the configuration of the protection circuit module.
 図6(b)に示すように、本変形例に係る保護回路モジュールでは、サーミ
スタ素子444については、その全部が金属配線層440a2における第2領域
A22のZ軸方向上方(紙面手前側)に位置するのではなく、その一部しか金属
配線層440a2における第2領域A22のZ軸方向上方(紙面手前側)に位置
していない。ただし、温度ヒューズ素子447については、その全部が金属配
線層440a2における第1領域A21のZ軸方向上方(紙面手前側)に位置し
ている。このため、サーミスタ素子444については、金属配線440a2を介
した熱伝達により、ある程度の熱伝達に係る効果を得ることはできるが、上記
実施の形態および変形例1,2に対して、熱検知特性が低下してしまう。
As shown in FIG. 6B, in the protection circuit module according to this modification, all the thermistor elements 444 are located above the second region A22 in the metal wiring layer 440a2 in the Z-axis direction (front side in the drawing). Instead, only a part thereof is located above the second region A22 in the metal wiring layer 440a2 in the Z-axis direction (front side on the paper surface). However, all of the thermal fuse elements 447 are located above the first region A21 in the metal wiring layer 440a2 in the Z-axis direction (front side in the drawing). For this reason, the thermistor element 444 can obtain a certain degree of heat transfer effect by heat transfer through the metal wiring 440a2. Will fall.
 ただし、金属配線層340a2に対するサーミスタ素子344の重複度合いに
よっては、上記従来技術に係る保護回路モジュールと同等以上の熱検知特性を
得ることができ、シリコーン樹脂層を形成しなくてもよい分だけ製造コストの
低減を図ることができる。
 また、本変形例では、温度ヒューズ素子447については、その全部が金属
配線層440a2の上方に位置するので、温度ヒューズ素子447におけるFE
T素子142,143の熱を検知する性能が高い。
[その他の事項]
 上記実施の形態では、図1に示すように、3本の素電池11,12,13を
備える電池パック1を一例としたが、本発明は、素電池の本数や配置、および
素電池に対する保護回路モジュールの配置などに関して、種々のバリエーショ
ン構成を採用することができる。例えば、素電池については、リチウムイオン
電池に限らず、ニッケルカドミウム二次電池やニッケル水素二次電池などを採
用することもできるし、素電池の外観形状についても、円筒形に限らず角形の
ものを採用することもでき、さらには金属ラミネート外装電池などとすること
もできる。
However, depending on the degree of overlap of the thermistor element 344 with respect to the metal wiring layer 340a2, it is possible to obtain heat detection characteristics equal to or higher than those of the protection circuit module according to the above-described prior art, and manufacture as much as the silicone resin layer need not be formed Cost can be reduced.
Further, in the present modification, all of the thermal fuse element 447 is located above the metal wiring layer 440a2, so that the FE in the thermal fuse element 447 is the same.
The performance of detecting the heat of the T elements 142 and 143 is high.
[Other matters]
In the above embodiment, as shown in FIG. 1, the battery pack 1 including the three unit cells 11, 12, and 13 is taken as an example, but the present invention is directed to the number and arrangement of unit cells, and protection against the unit cells. Various variation configurations can be employed with respect to the arrangement of the circuit modules. For example, the unit cell is not limited to a lithium ion battery, and a nickel cadmium secondary battery, a nickel hydride secondary battery, or the like can also be adopted. Can also be used, and further, a metal laminate outer battery can be used.
 また、上記実施の形態では、電池パック1に組み込まれた保護回路モジュー
ル14を一例としたが、必ずしも保護回路モジュールが素電池と一緒にパッケ
ージングされている必要はない。即ち、保護回路モジュール単体からなるデバ
イスとすることもできる。
 また、保護回路モジュールにおける基板の形状についても、細長い短冊状だ
けでなく、正方形のものや円形、さらには楕円形などのものとすることもでき
る。
In the above embodiment, the protection circuit module 14 incorporated in the battery pack 1 is taken as an example. However, the protection circuit module does not necessarily have to be packaged together with the unit cell. That is, it can be a device composed of a single protection circuit module.
Further, the shape of the substrate in the protection circuit module is not limited to an elongated strip shape, but may be a square shape, a circular shape, or an elliptical shape.
 また、上記実施の形態および変形例などでは、サーミスタ素子について、特
に言及をしなかったが、例えば、PTC(Positive Tempera
ture Coefficient)素子、NTC(Negative Te
mperature Coefficient)素子、さらには、温度ヒュー
ズなどを採用することができる。
 また、上記実施の形態および変形例では、サーミスタ素子144,244に
よりFET素子142,143の温度を検知することとしたが、検知対象はト
ランジスタ素子などの他のスイッチング素子や、抵抗素子や外部接続端子、接
続配線などとすることもできる。
Further, in the above-described embodiments and modifications, the thermistor element is not particularly mentioned. For example, PTC (Positive Tempera)
true Coefficient (NT) element, NTC (Negative Te)
For example, a temperature coefficient element or a thermal fuse may be employed.
In the embodiment and the modification described above, the temperature of the FET elements 142 and 143 is detected by the thermistor elements 144 and 244. However, the detection target is other switching elements such as transistor elements, resistance elements, and external connections. It can also be a terminal, connection wiring, or the like.
 さらに、金属配線層の構成材料としては、熱伝導性が高い銅(Cu)が望ま
しいが、その他にアルミニウム(Al)やニッケル(Ni)メッキ鋼などとす
ることもできる。
Furthermore, as a constituent material of the metal wiring layer, copper (Cu) having high thermal conductivity is desirable, but aluminum (Al), nickel (Ni) plated steel, etc. can also be used.
 本発明は、モバイル機器や車両用の電源として、高い品質を備えながら、製
造コストの低い電池パックを実現するのに有用である。
INDUSTRIAL APPLICABILITY The present invention is useful for realizing a battery pack with a low manufacturing cost while having high quality as a power source for mobile devices and vehicles.
  1.電池パック
 10.外装ケース
 11,12,13.素電池
 14.保護回路モジュール
140.基板
141.外部接続端子
142,143.FET素子
144,244,344.サーミスタ素子
145,146.IC素子
147,347,447.温度ヒューズ素子
140a1,140b1,140c1,140d1,140e1,140f1,140g
1,140h1,140a2,140b2,140a3,140b3,140a4,14
0b4,240a2,340a2,440a2.金属配線層
140a5,140a6,140a7.絶縁層
140i1,140j1.スルーホール
1. Battery pack 10. Exterior case 11, 12, 13. Unit cell 14. Protection circuit module 140. Substrate 141. External connection terminals 142, 143. FET elements 144, 244, 344. Thermistor elements 145 and 146. IC elements 147, 347, 447. Thermal fuse elements 140a1, 140b1, 140c1, 140d1, 140e1, 140f1, 140g
1,140h1,140a2,140b2,140a3,140b3,140a4,14
0b4, 240a2, 340a2, 440a2. Metal wiring layers 140a5, 140a6, 140a7. Insulating layers 140i1, 140j1. Through hole

Claims (8)

  1.  二次電池とその装着機器との間における電力の入出力経路中に介挿される保
    護回路モジュールであって、
     複数の金属配線層、および当該金属配線層間に介挿された絶縁層からなる基
    板と、
     前記基板の一方の主面に実装され、前記電力の入出力経路中に介挿された電
    子素子と、
     前記基板における前記一方の主面または他方の主面に配置された感熱素子と、
    を備え、
     前記基板および前記電子素子および前記感熱素子を、前記基板の一方の主面
    に対して直交する方向から平面視し、且つ、前記基板における前記絶縁層を透
    視するとき、
     前記基板における前記複数の金属配線層の内、前記電子素子に対して前記絶
    縁層を間に挟んだ前記一方の主面に最も近い内層の金属配線層の一部は、前記
    電子素子の少なくとも一部と前記感熱素子の全部とに重複する状態で形成され
    ており、
     前記感熱素子は、前記金属配線層の一部を介して前記電子素子の温度を検知
    する
     ことを特徴とする保護回路モジュール。
    A protection circuit module inserted in an input / output path of power between the secondary battery and the mounted device,
    A substrate comprising a plurality of metal wiring layers and an insulating layer interposed between the metal wiring layers;
    An electronic element mounted on one main surface of the substrate and inserted in the power input / output path;
    A thermal element disposed on the one main surface or the other main surface of the substrate;
    With
    When the substrate, the electronic element, and the thermosensitive element are viewed in a plan view from a direction orthogonal to one main surface of the substrate, and the insulating layer in the substrate is seen through,
    Of the plurality of metal wiring layers on the substrate, a part of the inner metal wiring layer closest to the one main surface sandwiching the insulating layer between the electronic elements is at least one of the electronic elements. Formed in a state overlapping with all of the thermosensitive element,
    The said heat sensitive element detects the temperature of the said electronic element through a part of said metal wiring layer. The protection circuit module characterized by the above-mentioned.
  2.  前記電子素子は、スイッチング素子である
     ことを特徴とする請求項1に記載の保護回路モジュール。
    The protection circuit module according to claim 1, wherein the electronic element is a switching element.
  3.  前記基板における前記一方の主面には、前記スイッチング素子に対して間隔
    をあけた状態で、第2スイッチング素子が実装されており、
     前記スイッチング素子および前記第2スイッチング素子は、ともにFET素
    子であり、
     前記基板における前記内層の金属配線層の一部は、前記スイッチング素子と
    前記第2スイッチング素子のドレイン同士の接続に供されている
     ことを特徴とする請求項2に記載の保護回路モジュール。
    A second switching element is mounted on the one main surface of the substrate in a state spaced from the switching element,
    The switching element and the second switching element are both FET elements,
    3. The protection circuit module according to claim 2, wherein a part of the inner metal wiring layer in the substrate is provided for connection between drains of the switching element and the second switching element.
  4.  前記感熱素子は、前記基板における前記一方の主面上において、前記スイッ
    チング素子と前記第2スイッチング素子との間に配置されている
     ことを特徴とする請求項3に記載の保護回路モジュール。
    The protection circuit module according to claim 3, wherein the thermal element is disposed between the switching element and the second switching element on the one main surface of the substrate.
  5.  前記スイッチング素子と前記第2スイッチング素子のドレイン同士の接続に
    供されている前記内層の金属配線層の一部は、前記スイッチング素子と前記第
    2スイッチング素子のドレイン同士の間の第1領域と、当該第1領域から前記
    ドレイン同士を結ぶ方向に対して交差する方向に向けて膨出した第2領域とを
    有し、
     前記第1領域と第2領域とは連続形成されているとともに、前記感熱素子は、
    前記第2領域の上方に相当する位置に配置されている
     ことを特徴とする請求項3に記載の保護回路モジュール。
    A part of the inner metal wiring layer provided for connection between the drains of the switching element and the second switching element is a first region between the drains of the switching element and the second switching element; A second region bulging from the first region toward the direction intersecting the direction connecting the drains,
    The first region and the second region are continuously formed, and the thermal element is
    The protection circuit module according to claim 3, wherein the protection circuit module is disposed at a position corresponding to the upper side of the second region.
  6.  前記一方の主面における前記金属配線層の一部であり、前記スイッチング素
    子および前記第2スイッチング素子のドレインがそれぞれ接続される導電ラン
    ドは、前記基板における前記内層の金属配線層の一部に対して、各々複数のス
    ルーホールにより接続されている
     ことを特徴とする請求項3から請求項5の何れかに記載の保護回路モジュー
    ル。
    The conductive land, which is a part of the metal wiring layer on the one main surface and to which the drains of the switching element and the second switching element are respectively connected, is part of the metal wiring layer of the inner layer on the substrate The protection circuit module according to claim 3, wherein the protection circuit modules are connected by a plurality of through holes.
  7.  前記感熱素子は、チップサーミスタ素子である
     ことを特徴とする請求項1から請求項6の何れかに記載の保護回路モジュー
    ル。
    The protection circuit module according to claim 1, wherein the thermal element is a chip thermistor element.
  8.  1または複数の二次電池と、
     請求項1から請求項7の何れかの保護回路モジュールと、
    を備える
     ことを特徴とする電池パック。
    One or more secondary batteries;
    A protection circuit module according to any one of claims 1 to 7,
    A battery pack comprising:
PCT/JP2012/057084 2011-04-01 2012-03-21 Protection circuit module and battery pack WO2012137597A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011081378A JP2014116329A (en) 2011-04-01 2011-04-01 Protection circuit module and battery pack
JP2011-081378 2011-04-01

Publications (1)

Publication Number Publication Date
WO2012137597A1 true WO2012137597A1 (en) 2012-10-11

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WO (1) WO2012137597A1 (en)

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Publication number Priority date Publication date Assignee Title
EP3038438A1 (en) * 2014-12-22 2016-06-29 LG Electronics Inc. Printed circuit board and motor drive apparatus including the printed circuit board
WO2019176509A1 (en) * 2018-03-15 2019-09-19 株式会社オートネットワーク技術研究所 Electrical connection apparatus
US10651519B2 (en) * 2016-12-14 2020-05-12 Denso Corporation Battery pack

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Publication number Priority date Publication date Assignee Title
KR102357835B1 (en) 2017-01-26 2022-02-04 삼성에스디아이 주식회사 Battery pack

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Publication number Priority date Publication date Assignee Title
JPH06260730A (en) * 1993-03-08 1994-09-16 Sony Corp Printed wiring board
JPH09233713A (en) * 1996-02-20 1997-09-05 Internatl Business Mach Corp <Ibm> Protective circuit of secondary battery
JP2001061232A (en) * 1999-08-20 2001-03-06 Toshiba Electronic Engineering Corp Protection circuit device of secondary battery
JP2002516554A (en) * 1998-05-21 2002-06-04 クゥアルコム・インコーポレイテッド Battery pack protection circuit
JP2004087851A (en) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd Circuit board and battery pack
JP2008270683A (en) * 2007-04-25 2008-11-06 Nidec Sankyo Corp Laminated substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260730A (en) * 1993-03-08 1994-09-16 Sony Corp Printed wiring board
JPH09233713A (en) * 1996-02-20 1997-09-05 Internatl Business Mach Corp <Ibm> Protective circuit of secondary battery
JP2002516554A (en) * 1998-05-21 2002-06-04 クゥアルコム・インコーポレイテッド Battery pack protection circuit
JP2001061232A (en) * 1999-08-20 2001-03-06 Toshiba Electronic Engineering Corp Protection circuit device of secondary battery
JP2004087851A (en) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd Circuit board and battery pack
JP2008270683A (en) * 2007-04-25 2008-11-06 Nidec Sankyo Corp Laminated substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3038438A1 (en) * 2014-12-22 2016-06-29 LG Electronics Inc. Printed circuit board and motor drive apparatus including the printed circuit board
US10666118B2 (en) 2014-12-22 2020-05-26 Lg Electronics Inc. Printed circuit board and motor drive apparatus including the printed circuit board
US10651519B2 (en) * 2016-12-14 2020-05-12 Denso Corporation Battery pack
WO2019176509A1 (en) * 2018-03-15 2019-09-19 株式会社オートネットワーク技術研究所 Electrical connection apparatus

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