WO2012127342A1 - Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less - Google Patents
Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less Download PDFInfo
- Publication number
- WO2012127342A1 WO2012127342A1 PCT/IB2012/050946 IB2012050946W WO2012127342A1 WO 2012127342 A1 WO2012127342 A1 WO 2012127342A1 IB 2012050946 W IB2012050946 W IB 2012050946W WO 2012127342 A1 WO2012127342 A1 WO 2012127342A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- fluorine
- solution
- material layers
- groups
- free
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 title claims abstract description 42
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- 230000003287 optical effect Effects 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 34
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- 125000000129 anionic group Chemical group 0.000 claims abstract description 24
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- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 4
- 125000001302 tertiary amino group Chemical group 0.000 claims description 4
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- 229910019142 PO4 Inorganic materials 0.000 claims description 2
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- HHBBIOLEJRWIGU-UHFFFAOYSA-N 4-ethoxy-1,1,1,2,2,3,3,4,5,6,6,6-dodecafluoro-5-(trifluoromethyl)hexane Chemical compound CCOC(F)(C(F)(C(F)(F)F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)F HHBBIOLEJRWIGU-UHFFFAOYSA-N 0.000 description 2
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
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- OKIYQFLILPKULA-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4-nonafluoro-4-methoxybutane Chemical compound COC(F)(F)C(F)(F)C(F)(F)C(F)(F)F OKIYQFLILPKULA-UHFFFAOYSA-N 0.000 description 1
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- NILYRCYRBPDITI-UHFFFAOYSA-N 4H-pyrazole Chemical compound C1C=NN=C1 NILYRCYRBPDITI-UHFFFAOYSA-N 0.000 description 1
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- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical group OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Chemical group OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
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- 235000013681 dietary sucrose Nutrition 0.000 description 1
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- ZPRZNBBBOYYGJI-UHFFFAOYSA-L disodium;2-[1-[2-(carboxylatomethoxy)ethyl]-2-undecyl-4,5-dihydroimidazol-1-ium-1-yl]acetate;hydroxide Chemical compound [OH-].[Na+].[Na+].CCCCCCCCCCCC1=NCC[N+]1(CCOCC([O-])=O)CC([O-])=O ZPRZNBBBOYYGJI-UHFFFAOYSA-L 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
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- 238000002386 leaching Methods 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
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- 239000000123 paper Substances 0.000 description 1
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- 239000011591 potassium Substances 0.000 description 1
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- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
Definitions
- the present invention is directed to a novel method for manufacturing integrated circuits devices, optical devices, micromachines and mechanical precision devices having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios >2.
- patterned material layers like patterned photoresist layers, patterned barrier material layers containing or consisting of titanium nitride, tantalum or tantalum nitride, patterned multi-stack material layers containing or consisting of stacks e.g. of alternating polysilicon and silicon dioxide layers, and patterned dielectric material layers containing or consisting of silicon dioxide or low-k or ultra-low-k dielectric materials are produced by photolithographic techniques.
- patterned material layers comprise structures of dimensions even below 20 nm with high aspect ratios.
- Photolithography is a method in which a pattern on a mask is projected onto a substrate such as a semiconductor wafer.
- Semiconductor photolithography typically includes the step of applying a layer of a photoresist on a top surface of the semiconductor substrate and exposing the photoresist to actinic radiation, in particular UV radiation of a wavelength of , for exa m pl e , 1 93 n m , th roug h the m ask .
- actinic radiation in particular UV radiation of a wavelength of
- the air gap between the final lens of the optical system and the photoresist surface is replaced by a liquid medium that has a refractive index greater than one, e.g., ultra pure water with a refractive index of 1 .44 for the wavelength of 193 nm.
- a barrier coating or a water _ in order to avoid leaching, water-uptake and pattern degradation, a barrier coating or a water _
- a post-exposure bake is often performed to allow the exposed photoresist polymers to cleave.
- the substrate including the cleaved polymer photoresist is then transferred to a developing chamber to remove the exposed photoresist, which is soluble in aqueous developer solutions.
- a developer solution such as tetramethylammonium hydroxide (TMAH) is applied to the resist surface in the form of a puddle to develop the exposed photoresist.
- TMAH tetramethylammonium hydroxide
- a deionized water rinse is then applied to the substrate to remove the dissolved polymers of the photoresists.
- the substrate is then sent to a spin drying process. Thereafter, the substrate can be transferred to the next process step, which may include a hard bake process to remove any moisture from the photoresist surface.
- photoresist patterns are required to include relatively thin and tall structures or features of photoresists, i.e., features having a high aspect ratio, on the substrate. These structures may suffer from bending and/or collapsing, in particular, during the spin dry process, due to excessive capillary forces of the deionized water remaining from the chemical rinse and spin dry processes and being disposed between adjacent photoresist features.
- the maximum stress ⁇ between small features caused by the capillary forces can be defined as follows:
- Another solution for immersion lithography may include using a photoresist with modified polymers to make it more hydrophobic. However, this solution may decrease the wettability of the developing solution.
- Another problem of the conventional photolithographic process is line edge roughness (LER) due to resist and optical resolution limits. LER includes horizontal and vertical deviations from the feature's ideal form. Especially as critical dimensions shrink, the LER becomes more problematic and may cause yield loss in the manufacturing process of IC devices.
- LER line edge roughness
- Watermarks may form on the photoresist as the deionized water or rinse liquid cannot be spun off from the hydrophobic surface of the photoresist.
- the photoresist may be hydrophobic particularly in areas of isolated, or non-dense, patterning. The watermarks have a harmful effect on yield and IC device performance.
- the American patent application US 2008/0280230 A1 discloses a chemical rinse solution containing an alcohol, in particular, isobutyl alcohol.
- the chemical rinse solution may contain fluorosurfactants such as 3M NovecTM fluid HFE-71 1 PA, -7000, -7100, -7200, and 7500, 3M FluorinertTM FC-72, -84, -77, -3255, -3283, -40, -43, -70, -4432, 4430, and - 4434, or 3M NovecTM 4200 and 4300.
- fluorosurfactants such as 3M NovecTM fluid HFE-71 1 PA, -7000, -7100, -7200, and 7500, 3M FluorinertTM FC-72, -84, -77, -3255, -3283, -40, -43, -70, -4432, 4430, and - 4434, or 3M NovecTM 4200 and 4300.
- 3M NovecTM 4200 is a perfluoroalkyl sulfonamide
- 3M NovecTM 4300 is a perfluoroalkyl sulfonate
- HFE-7000 is heptafluoro-3-methoxypropane
- HFE-7100 is nonafluoro-4-methoxybutane
- HFE-7200 is 1 -ethoxy-nonafluorobutane
- HFE-7500 is 3- ethoxy-dodecafluoro-2-(trifluoromethyl)-hexane
- HFE-71 1 PA is an azeotrope of 1 - .
- fluorosurfactants find numerous applications, for example, in textile, paper, glass, building, coating, cleaner, cosmetic, herbicide, pesticide, fungicide, adhesive, metal, or mineral oil technologies as well as in special coatings for semiconductor photolithography (photoresist, top antireflective coatings, bottom antireflective coatings) [cf., for example WO 2008/003446 A2 , page 1 4 , l i ne 29 to page 20 , l i ne 20] .
- the use of the fluorosurfactants for manufacturing ICs for nodes of 50 nm and lower, in particular for 32 nm nodes and lower, is not disclosed.
- many of these prior art fluorosurfactants are not easily biodegradable and are therefore prone to bioaccumulation. Objects of the Invention
- the novel method should allow for the immersion photolithography of photoresist layers, the developing of the photoresist layers exposed to actinic radiation through a mask and/or the chemical rinse of patterned material layers comprising patterns with a high aspect ratio and line-space dimensions of 50 nm and less, in particular, of 32 nm and less, especially, of 20 nm and less, without causing pattern collapse, line edge roughness (LER) and watermark defects.
- LER line edge roughness
- the novel method should allow for a significant reduction of LER by smoothing the roughness of the surfaces of the developed photoresist patterns caused by interference effects, for the efficient prevention and/or the removal of watermark defects not only on photoresist patterns but also on other patterned material layers, and the efficient removal of particles in order to achieve a significant defect reduction not only on photoresist patterns but also on other patterned material layers.
- novel method should not incur the disadvantages associated with the use of fluorosurfactants, in particular, insufficient biodegradability and bioaccumulation.
- the novel method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices comprising the steps of (1 ) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2;
- the method of the invention allowed for the immersion photolithography of photoresist layers, the developing of photoresist layers exposed to actinic radiation through a mask and/or the chemical rinse of patterned material layers, in particular, patterned developed photoresist layers, comprising patterns having line-space dimensions of 50 nm and less, particularly, of 32 nm and less and, most particularly, 20 nm and less, and aspect ratios >2 in the case of photoresist structures, and, in particular, >10 in the case of non-photoresist structures, without causing pattern collapse, line edge roughness (LER) and watermark defects.
- LER line edge roughness
- structures having aspect ratios >10 are frequently referred to as "high aspect ratio stacks".
- the method of the invention allowed for a significant reduction of LER by smoothing the roughness of the surfaces of the developed photoresist patterns caused by interference effects, for the efficient prevention and/or the removal of watermark defects not only on photoresist patterns but also on other patterned material layers, and the efficient removal of particles whereby a significant defect reduction not only on photoresist patterns but also on other patterned material layers could be achieved.
- the method of the invention could be most advantageously applied to photoresist patterns prepared not only from immersion photoresist layers but also from extreme UV (EUV) photoresist layers and electron beam (eBeam) photoresist layers.
- EUV extreme UV
- eBeam electron beam
- the method of the invention did not incur the disadvantages associated with the use of fluorosurfactants, in particular, insufficient biodegradability and bioaccumulation.
- the present invention is directed to a method of manufacturing integrated circuit (IC) devices, optical devices, micromachines and mechanical precision devices, in particular IC devices.
- IC integrated circuit
- the substrate is a semiconductor substrate, more preferably a silicon wafer including a silicon-gallium wafer, which wafers are customarily used for manufacturing IC devices, in particular IC devices comprising ICs having LSI, VLSI and ULSI.
- a substrate having patterned material layers having line-space dimensions of 50 nm and less, in particular, 32 nm and less and, especially, 20 nm and less, i.e. patterned material layers for the sub-20 nm technology nodes.
- the patterned material layers have ratios >2, preferably >10, even more preferably >50.
- the ratios are >2 and when they comprise or consist of non- photoresist structures the ratios are >10.
- the aspect ratio is in the range of up to 75, as for example, for 15 nm flash devices.
- the patterned material layers can be patterned developed photoresist layers, patterned barrier material layers containing or consisting of ruthenium, titanium nitride, tantalum or tantalum nitride, patterned multi-stack material layers containing or consisting of layers of at least two different materials selected from the group consisting of silicon, polysilicon, silicon dioxide, low-k and ultra-low-k materials, high-k materials, semiconductors other than silicon and polysilicon and metals; and patterned dielectric material layers containing or consisting of silicon dioxide or low-k or ultra-low-k dielectric materials.
- the surface of the patterned material layers is provided with a positive or a negative electrical charge by contacting the semiconductor substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free ionic surfactant A having at least one cationic or potentially cationic group or having at least one anionic or potentially anionic group.
- aqueous means that the aqueous, fluorine-free solution S contains the water, preferably deionized water and, most preferably ultrapure water as the main solvent.
- the aqueous, fluorine-free solution S may contain water-miscible polar organic solvents, albeit only in such minor amounts that do jeopardize the aqueous nature of the solution S.
- Fluorine-free means that the concentration of fluoride ions or covalently bonded fluorine in the solution S is below the detection limit of customary and known methods for quantitatively or qualitatively detecting fluorine.
- the aqueous, fluorine-free solution S can be applied in accordance with any known methods customarily used for contacting solid surfaces with liquids, as for example, dipping the substrates into the solution S or spraying, dropping or puddling the solution S onto the substrate surface.
- the aqueous, fluorine-free solution S contains at least one, preferably one, fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one, preferably one, fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one, preferably one, fluorine-free amphoteric surfactant.
- the at least one cationic or potentially cationic group contained in the fluorine- free cationic surfactant A is selected from the group consisting of primary, secondary and tertiary amino groups, primary, secondary, tertiary and quaternary ammonium groups, uronium-, thiouronium- und guanidinium groups, quaternary phosphonium groups and tertiary sulfonium groups.
- the secondary and tertiary amino groups, the secondary, tertiary and quaternary ammonium groups, the tertiary sulfonium groups and the quaternary phosphonium groups can comprise any organic residues as long as these residues do not jeopardize the hydrophilic nature of the cationic or potentially cationic group.
- the organic residues are selected from the group consisting of substituted and unsubstituted, preferably unsubstituted, alkyl groups having 1 to 10 carbon atoms, cycloalkyi groups having 5 to 12 carbon atoms, aryl groups having 6 to 16 carbon atoms and alkylcycloalkyl groups, alkylaryl groups, cycloalkylaryl groups and alkylcycloalkylaryl groups containing or consisting of the aforementioned alkyl, cycloalkyi and aryl groups.
- the secondary and tertiary amino groups and the secondary, tertiary and quaternary ammonium groups can be integral constituents of cationic substituted and unsubstituted, preferably unsubstituted, heterocyclic groups, preferably selected from the group consisting of pyrrolium-, imidazolium-, imidazolinium, 1 H-pyrazolium-, 3H- pyrazolium-, 4H-pyrazolium-, 1 -pyrazolinium-, 2-pyrazolinium-, 3-pyrazolinium-, 2,3- dihydro-imidazolinium-, 4,5-dihydro-imidazolinium-, 2,5-dihydro-imidazolinium-, pyrrolidinium-, 1 ,2,4-triazolium- (quaternary nitrogen atom in 1 -position), 1 ,2,4-triazolium- (quaternary nitrogen atom in 4-position), 1 ,2,3-triazolium- (quaternium-
- substituted organic moieties and cationic heterocyclic groups contain inert substituents, i.e., substituents which do not cause undesired effects such as decomposition or condensation reactions or the formation of precipitates.
- substituents which do not cause undesired effects such as decomposition or condensation reactions or the formation of precipitates.
- suitable substituents are nitrile groups, nitro groups and chlorine atoms.
- the counterions of the cationic groups are selected from the group consisting of anions of volatile inorganic and organic acids, in particular, HCI, formic acid, acetic acid and salicylic acid.
- the potentially anionic and anionic groups of the fluorine-free anionic surfactants A are selected from the group consisting of carboxylic acid, sulfonic acid, phosphonic acid, sulfuric acid monoester, phosphoric acid monoester and phosphoric acid diester groups and carboxylate, sulfonate, phosphonates, monoester sulfate, monoester phosphate and diester phosphate groups.
- the counterions of the anionic groups are selected from the group consisting of ammonium, lithium, sodium, potassium and magnesium cations. Most preferably, ammonium is used as the counterion.
- the surfactants A can contain nonionic hydrophilic groups customarily used in nonionic surfactants.
- the anionic and cationic surfactants A contain at least one hydrophobic group.
- any suitable hydrophobic group customarily used in ionic surfactants can be used.
- the hydrophobic groups are selected from the group consisting of substituted and unsubstituted, preferably, unsubstituted, branched and unbranched, saturated and unsaturated alkyl groups having 5 to 30 carbon atoms, cycloalkyl groups having 5 to 20 carbon atoms, aryl groups having 6 to 20 carbon atoms, alkylcycloalkyl groups, alkylaryl groups, cycloalkylaryl groups and alkylcycloalkylaryl containing or consisting of the aforementioned alkyl, cycloalkyl and aryl groups, and polysiloxane groups.
- the aforementioned substituted hydrophobic groups contain inert substituents, i.e., substituents which do not jeopardize the hydrophobic nature of the group and do not cause undesired effects such as decomposition or condensation reactions or the formation of precipitates.
- substituents are nitrile groups, nitro groups, fluorine atoms, and pentafluorosulfanyl groups.
- the fluorine-free amphoteric surfactant A is selected from the group consisting of alkylamine oxides, in particular alkyldimethylamine oxides; acyl-/dialkylethylendiamines, in particular sodium acylamphoacetate, disodium acylamphodipropionate, disodium alkylamphodiacetate, sodium acylamphohydroxypropylsulfonate, disodium acylamphodiacetate, sodium acyl-amphopropionate, and N-coconut fatty acid amidoethyl- N-hydroxyethylglycinate sodium salts; N-alkylamino acids, in particular aminopropyl a l kyl g l uta m i d e , a l kyl a m i n p rop i o n i c a c i d , s od i u
- the fluorine-free surfactants A are customary and known commercially available materials and are described, for example, in Rompp Online 201 1 , "Cationic Surfactants”, “Anionic Surfactants” and “Amphoteric Surfactants”.
- the concentration of the fluorine-free cationic, anionic or amphoteric surfactants A in the aqueous, fluorine-free solution S primarily depends on the critical micelle concentration value (CMC value). Therefore, the concentration can vary broadly and, therefore, can be adapted most advantageously to the particular requirements of a given method of the invention. Preferably, the concentration is in the range of 0.0005 to 1 % by weight, preferably 0.005 to 0.8% by weight and, most preferably, 0.01 to 0.6% by weight, the weight percentages being based on the complete weight of the solution S.
- the aqueous, fluorine-free solution S may contain water-miscible polar organic solvents.
- the aqueous, fluorine-free solution S does not contain any organic solvents.
- the aqueous, fluorine-free solution S can be used for different purposes and objects. Thus, it can be used as an immersion liquid S for immersing photoresists during irradiation with actinic light through a mask, as a developer solution S for photoresist layers exposed to actinic radiation through a mask and as a chemical rinse solution S for rinsing the patterned material layers.
- the aqueous solution S is removed from the contact with the substrate.
- Any known methods customarily used for removing liquids from solid surfaces can be employed.
- the solution S is removed by spin drying or drying processes making use of the Marangoni effect.
- the substrate is provided by a photolithographic process comprising the steps of
- immersion photoresist Any customary and known immersion photoresist, EUV photoresist or eBeam photoresist can be used.
- the immersion photoresist may already contain at least one fluorine-free cationic, anionic or amphoteric surfactant A.
- the immersion photoresist can contain nonionic surfactants. Suitable nonionic surfactants are described, for example, in the American patent application US 2008/0299487 A1 , page 6, paragraph [0078]. Most preferably, the immersion photoresist is a positive resist.
- UV radiation of a wavelength of 193 nm is preferably used as the actinic radiation.
- ultra-pure water is preferably used as the immersion liquid. More preferably, the immersion liquid contains at least one fluorine-free cationic, anionic or amphoteric surfactant A.
- Any customary and known developer solution can be used for developing the exposed photoresist layer.
- aqueous developer solutions containing tetramethylammonium hydroxide (TMAH) are used. More preferably, the aqueous developer solutions contain at least one fluorine-free ionic surfactant A.
- the chemical rinse solutions are aqueous solutions. More preferably, the aqueous developer solutions contain at least one fluorine-free cationic, anionic or amphoteric surfactant A. Preferably, the chemical rinse solutions are applied to the exposed and developed photoresist layers as puddles.
- the immersion solution S, the developer solution S or the chemical rinse solution S contains at least one fluorine-free ionic surfactant A.
- the at least one fluorine-free cationic, anionic or amphoteric surfactant A is contained in the chemical rinse solution S.
- Customary and known equipment customarily used in the semiconductor industry can be used for carrying out the photolithographic process in accordance with the method of the invention.
- Figure 1 illustrates how the photoresist structures or a high aspect ratio stacks 2 are drawn towards each other by the capillary forces of the evaporating cleaning solution 4, which capillary forces lead to pattern collapse.
- Figure 2 illustrates the beneficial effect which is achieved when the fluorine-free cationic surfactant A 3 is added to the cleaning solution 4, resulting in an aqueous fluorine-free solution S.
- the solution S effectively removes the particles and residues 5.
- some of the fluorine-free cationic surfactant A 3 is left on the surface of the structures, thereby creating a repulsive electrostatic force which prevents the pattern collapse.
- Figure 3 illustrates the beneficial effect which is achieved when the fluorine-free anionic surfactant A 3 is added to the cleaning solution 4, resulting in an aqueous fluorine-free solution S.
- the solution S effectively removes the particles and residues 5.
- some of the fluorine-free anionic surfactant A 3 is left on the surface of the structures, thereby creating a repulsive electrostatic force which prevents the pattern collapse.
- Silicon wafers were provided with 1000 nm thick layers of an immersion photoresist.
- the photoresist layers were exposed to UV radiation of a wavelength of 193 through a mask using ultrapure water as the immersion liquid.
- the mask contained features having dimensions of 20 nm.
- the exposed photoresist layers were baked and developed with an aqueous developer solution containing TMAH.
- the baked and developed photoresist layers were subjected to a chemical rinse treatment using a chemical rinse solution containing 0.02% by weight of a fluorine-free cationic surfactant.
- the chemical rinse solution was applied as a puddle.
- the silicon wafers were spun dry.
- the dried silicon wafers did not show any watermarks. It could be corroborated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) that the dried patterned photoresist layers having patterns with line-space dimensions of 20 nm and an aspect ratio of 50 did not show any pattern collapse.
- SEM scanning
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Abstract
Description
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Priority Applications (8)
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CN201280013375.0A CN103430102B (en) | 2011-03-18 | 2012-02-29 | Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less |
SG2013062880A SG192847A1 (en) | 2011-03-18 | 2012-02-29 | Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less |
US14/005,746 US9184057B2 (en) | 2011-03-18 | 2012-02-29 | Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less |
EP12761512.8A EP2686737A4 (en) | 2011-03-18 | 2012-02-29 | Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less |
JP2013558534A JP6063879B2 (en) | 2011-03-18 | 2012-02-29 | Integrated circuit device, optical device, micromachine, and method for manufacturing mechanical precision device having patterned material layer having a line width of 50 nm or less |
RU2013146360/28A RU2585322C2 (en) | 2011-03-18 | 2012-02-29 | Method of producing integrated circuits, optical devices, micromachines and mechanical high-precision devices with layers of structured material with line spacing of 50 nm or less |
KR1020137024426A KR101934687B1 (en) | 2011-03-18 | 2012-02-29 | Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less |
IL228000A IL228000B (en) | 2011-03-18 | 2013-08-18 | Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8932933B2 (en) * | 2012-05-04 | 2015-01-13 | Micron Technology, Inc. | Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures |
KR102167993B1 (en) * | 2012-06-22 | 2020-10-21 | 아반토 퍼포먼스 머티리얼즈, 엘엘씨 | Rinsing solution to prevent tin pattern collapse |
SG11201500098XA (en) | 2012-07-10 | 2015-02-27 | Basf Se | Compositions for anti pattern collapse treatment comprising gemini additives |
US10014261B2 (en) * | 2012-10-15 | 2018-07-03 | Palo Alto Research Center Incorporated | Microchip charge patterning |
JP6764288B2 (en) * | 2016-09-12 | 2020-09-30 | 株式会社Screenホールディングス | Substrate processing method and substrate processing equipment |
JP2018127513A (en) * | 2017-02-06 | 2018-08-16 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | Semiconductor water-soluble composition, and use thereof |
US10748757B2 (en) * | 2017-09-21 | 2020-08-18 | Honeywell International, Inc. | Thermally removable fill materials for anti-stiction applications |
US11094527B2 (en) | 2018-10-10 | 2021-08-17 | International Business Machines Corporation | Wet clean solutions to prevent pattern collapse |
CN113497142B (en) * | 2020-04-01 | 2024-04-19 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
JP2022149423A (en) * | 2021-03-25 | 2022-10-06 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080096141A1 (en) * | 2004-12-09 | 2008-04-24 | Yoshihiro Sawada | Cleaning Liquid For Lithography And Method For Resist Pattern Formation |
WO2008140083A1 (en) * | 2007-05-16 | 2008-11-20 | Tokuyama Corporation | Photoresist developing solution |
TW201035307A (en) * | 2009-03-31 | 2010-10-01 | Tokyo Ohka Kogyo Co Ltd | Cleaning liquid for lithography and method for forming a resist pattern using the same |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH063549B2 (en) * | 1984-12-25 | 1994-01-12 | 株式会社東芝 | Positive photoresist developer composition |
US6399279B1 (en) * | 1998-01-16 | 2002-06-04 | Mitsubishi Chemical Corporation | Method for forming a positive image |
US7087179B2 (en) * | 2000-12-11 | 2006-08-08 | Applied Materials, Inc. | Optical integrated circuits (ICs) |
US6660459B2 (en) * | 2001-03-14 | 2003-12-09 | Advanced Micro Devices, Inc. | System and method for developing a photoresist layer with reduced pattern collapse |
US6599683B1 (en) * | 2002-02-13 | 2003-07-29 | Micron Technology, Inc. | Photoresist developer with reduced resist toppling and method of using same |
DE10307523B4 (en) * | 2003-02-21 | 2005-11-17 | Infineon Technologies Ag | Process for producing a resist mask for the patterning of semiconductor substrates |
US20050158672A1 (en) | 2003-12-22 | 2005-07-21 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
US7008853B1 (en) * | 2005-02-25 | 2006-03-07 | Infineon Technologies, Ag | Method and system for fabricating free-standing nanostructures |
US8367312B2 (en) | 2006-01-11 | 2013-02-05 | Tokyo Ohka Kogyo Co., Ltd. | Detergent for lithography and method of forming resist pattern with the same |
JP2007258638A (en) | 2006-03-27 | 2007-10-04 | Sony Corp | Immersion exposure method and immersion exposure device |
JP4641964B2 (en) * | 2006-03-30 | 2011-03-02 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
US20080299487A1 (en) | 2007-05-31 | 2008-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography material and lithography process |
DE102006031262A1 (en) | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | fluorosurfactants |
DE102006031149A1 (en) | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | fluorosurfactants |
DE102006032391A1 (en) | 2006-07-04 | 2008-01-17 | Merck Patent Gmbh | fluorosurfactants |
DE102006031151A1 (en) | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | fluorosurfactants |
US20080280230A1 (en) | 2007-05-10 | 2008-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process including a chemical rinse |
US20100330805A1 (en) * | 2007-11-02 | 2010-12-30 | Kenny Linh Doan | Methods for forming high aspect ratio features on a substrate |
JP2009229572A (en) * | 2008-03-19 | 2009-10-08 | Tokyo Ohka Kogyo Co Ltd | Detergent for lithography and method for forming resist pattern |
DE102008027930A1 (en) | 2008-06-12 | 2009-12-17 | Merck Patent Gmbh | fluorosurfactants |
US20100122711A1 (en) * | 2008-11-14 | 2010-05-20 | Advanced Micro Devices, Inc. | wet clean method for semiconductor device fabrication processes |
BRPI1006393B1 (en) | 2009-04-02 | 2018-01-02 | Basf Se | "USE AT LEAST ONE UV FILTER" |
CN102422228B (en) | 2009-05-07 | 2015-01-21 | 巴斯夫欧洲公司 | Resist Stripping Compositions And Methods For Manufacturing Electrical Devices |
WO2010127941A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
SG10201402081TA (en) | 2009-05-07 | 2014-07-30 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
WO2011000694A1 (en) | 2009-06-30 | 2011-01-06 | Basf Se | Aqueous alkaline cleaning compositions and methods of their use |
US8969275B2 (en) | 2009-06-30 | 2015-03-03 | Basf Se | Aqueous alkaline cleaning compositions and methods of their use |
SG176903A1 (en) | 2009-06-30 | 2012-01-30 | Basf Se | Method for the phosphine-initialized production of hyperbranched polyols |
JP6165442B2 (en) | 2009-07-30 | 2017-07-19 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Post ion implanted photoresist stripping composition for advanced semiconductor applications. |
JP5206622B2 (en) * | 2009-08-07 | 2013-06-12 | 三菱瓦斯化学株式会社 | Treatment liquid for suppressing pattern collapse of metal microstructure and method for producing metal microstructure using the same |
CN102596855B (en) | 2009-09-02 | 2014-04-02 | 建筑研究和技术有限公司 | Hardening accelerator composition containing phosphated polycondensates |
WO2011045204A1 (en) | 2009-10-14 | 2011-04-21 | Basf Se | Method for producing oil using surfactant mixtures |
US8584750B2 (en) | 2009-10-14 | 2013-11-19 | Basf Se | Process for tertiary mineral oil production using surfactant mixtures |
US8853136B2 (en) | 2009-10-14 | 2014-10-07 | Basf Se | Process for tertiary mineral oil production using surfactant mixtures |
US8584751B2 (en) | 2009-10-14 | 2013-11-19 | Basf Se | Process for mineral oil production using surfactant mixtures |
AU2010305948A1 (en) | 2009-10-14 | 2012-05-24 | Basf Se | Method for tertiary oil production using surfactant mixtures |
EP2488599B1 (en) | 2009-10-14 | 2014-04-02 | Basf Se | Process for tertiary mineral oil production using surfactant mixtures |
DE102010043852A1 (en) | 2009-11-24 | 2011-05-26 | Basf Se | Method and device for characterizing magnetorheological fluids |
CN102630245B (en) | 2009-11-27 | 2014-10-08 | 巴斯夫欧洲公司 | Method for producing coatings containing polymers |
US8475662B2 (en) | 2009-11-30 | 2013-07-02 | Basf Se | Modified HIMS process |
WO2011069931A1 (en) | 2009-12-09 | 2011-06-16 | Basf Se | Formulation of light-sensitive pesticides and comb polymers containing a uv absorber |
GB201001923D0 (en) | 2010-02-05 | 2010-03-24 | Palox Offshore S A L | Protection of liquid fuels |
RU2012142938A (en) | 2010-03-10 | 2014-04-20 | Басф Се | METHOD FOR OIL PRODUCTION WITH APPLICATION OF CATIONIC SURFACE-ACTIVE SUBSTANCES, A HYDROPHOBIC BLOCK WHICH CONTAINS FROM 6 TO 10 CARBON ATOMS |
US8596367B2 (en) | 2010-03-10 | 2013-12-03 | Basf Se | Process for producing mineral oil using surfactants based on C16C18-containing alkyl propoxy surfactants |
US8607865B2 (en) | 2010-03-10 | 2013-12-17 | Basf Se | Process for extracting mineral oil using surfactants based on butylene oxide-containing alkyl alkoxylates |
EP2545137B1 (en) | 2010-03-10 | 2020-03-18 | Basf Se | Method for producing crude oil using surfactants based on c16c18 |
US20110220364A1 (en) | 2010-03-10 | 2011-09-15 | Basf Se | Process for mineral oil production using cationic surfactants having a hydrophobic block with a chain length of 6 to 10 carbon atoms |
AU2011226213A1 (en) | 2010-03-10 | 2012-10-11 | Basf Se | Use of polycarboxylate surfactant mixtures for microemulsion flooding |
MX340884B (en) | 2010-03-10 | 2016-07-29 | Basf Se | Method for producing crude oil using surfactants based on butylene oxide-containing alkyl alkoxylates. |
US8841241B2 (en) | 2010-04-16 | 2014-09-23 | Board Of Regents, The University Of Texas System | Anionic polyalkoxy group comprising surfactants on basis of guerbet-alcohols, method of manufacture and use in enhanced oil recovery (EOR) applications |
AR081282A1 (en) | 2010-04-23 | 2012-08-01 | Basf Se | PROCEDURE TO EXTRACT OIL USING SURFACTANTS, ESPECIALLY THOSE BASED ON A MIXTURE OF RENT ALCOXYLATES CONTAINING SECONDARY ALCOHOLS C35 |
AU2011244452A1 (en) | 2010-04-23 | 2012-11-01 | Basf Se | Method for producing mineral oil using surfactants based on a mixture of C32-Guerbet-, C34-Guerbet-, C36-Guerbet-containing alkyl alkoxylates |
US8618321B2 (en) | 2010-05-20 | 2013-12-31 | Basf Se | Derivatives of tris(2-hydroxyphenyl)methane, their preparation and use |
MX341194B (en) | 2010-05-20 | 2016-08-11 | Basf Se | Derivatives of tris(2-hydroxyphenyl)methane, and preparation and use thereof. |
RU2578718C2 (en) | 2010-07-19 | 2016-03-27 | Басф Се | Aqueous alkaline cleaning compositions and methods for use thereof |
JP5591623B2 (en) * | 2010-08-13 | 2014-09-17 | AzエレクトロニックマテリアルズIp株式会社 | Rinsing liquid for lithography and pattern forming method using the same |
SG10201506742RA (en) | 2010-08-27 | 2015-10-29 | Entegris Inc | Method for preventing the collapse of high aspect ratio structures during drying |
US8901000B2 (en) | 2010-09-01 | 2014-12-02 | Basf Se | Aqueous acidic solution and etching solution and method for texturizing the surface of single crystal and polycrystal silicon substrates |
CN103098179B (en) * | 2010-09-08 | 2016-12-07 | 三菱瓦斯化学株式会社 | The manufacture method for the treatment of fluid with the microstructure using this treatment fluid for suppressing the pattern collapse of microstructure |
EP2460860A1 (en) | 2010-12-02 | 2012-06-06 | Basf Se | Use of mixtures for removing polyurethanes from metal surfaces |
US8951955B2 (en) | 2011-01-13 | 2015-02-10 | Basf Se | Use of optionally oxidized thioethers of alcohol alkoxylates in washing and cleaning compositions |
ES2686304T3 (en) | 2011-01-13 | 2018-10-17 | Basf Se | Use of thioethers of alcoholalkoxylates, if necessary oxidized in detergents and cleaning agents |
MY161218A (en) | 2011-01-25 | 2017-04-14 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
WO2012113861A1 (en) | 2011-02-24 | 2012-08-30 | Basf Se | Compositions comprising alkylalkoxysulfonates for the production of high temperature stable foams |
US20120220502A1 (en) | 2011-02-24 | 2012-08-30 | Basf Se | Compositions comprising alkylalkoxysulfonates for the production of high temperature stable foams |
-
2012
- 2012-02-29 WO PCT/IB2012/050946 patent/WO2012127342A1/en active Application Filing
- 2012-02-29 EP EP12761512.8A patent/EP2686737A4/en not_active Withdrawn
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- 2012-02-29 KR KR1020137024426A patent/KR101934687B1/en active IP Right Grant
- 2012-02-29 JP JP2013558534A patent/JP6063879B2/en active Active
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- 2012-02-29 US US14/005,746 patent/US9184057B2/en active Active
- 2012-02-29 CN CN201280013375.0A patent/CN103430102B/en active Active
- 2012-03-16 TW TW101109236A patent/TWI574299B/en active
-
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- 2013-08-18 IL IL228000A patent/IL228000B/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080096141A1 (en) * | 2004-12-09 | 2008-04-24 | Yoshihiro Sawada | Cleaning Liquid For Lithography And Method For Resist Pattern Formation |
WO2008140083A1 (en) * | 2007-05-16 | 2008-11-20 | Tokuyama Corporation | Photoresist developing solution |
TW201035307A (en) * | 2009-03-31 | 2010-10-01 | Tokyo Ohka Kogyo Co Ltd | Cleaning liquid for lithography and method for forming a resist pattern using the same |
Non-Patent Citations (3)
Title |
---|
DRECHSLER, A. ET AL.: "ADSORPTION OF CATIONIC SURFACTANTS ONTO PHOTORESIST SURFACES - A WAY TO REDUCE PATTERN COLLAPSE IN HIGH ASPECT RATIO PATTERNING", THE CANADIAN JOURNAL OF CHEMICAL ENGINEERINGS, vol. 84, no. 1, February 2006 (2006-02-01), pages 3 - 8, XP055129155 * |
DRECHSLER, A. ET AL.: "The adsorption of cationic surfactants on photoresist surfaces and its effect on the pattern collapse in high aspect ratio patterning, Colloids and Surfaces Physicochem.", COLLOIDS AND SURFACES PHYSICOCHEM. ENG. ASPECTS, vol. 311, no. 1-3, 5 June 2007 (2007-06-05), pages 83 - 92, XP022326444 * |
See also references of EP2686737A4 * |
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IL228000A0 (en) | 2013-09-30 |
RU2585322C2 (en) | 2016-05-27 |
JP6063879B2 (en) | 2017-01-18 |
TWI574299B (en) | 2017-03-11 |
RU2013146360A (en) | 2015-04-27 |
US9184057B2 (en) | 2015-11-10 |
US20140011366A1 (en) | 2014-01-09 |
TW201243909A (en) | 2012-11-01 |
SG192847A1 (en) | 2013-09-30 |
KR101934687B1 (en) | 2019-03-18 |
MY165866A (en) | 2018-05-18 |
EP2686737A1 (en) | 2014-01-22 |
CN103430102B (en) | 2017-02-08 |
CN103430102A (en) | 2013-12-04 |
KR20140015368A (en) | 2014-02-06 |
JP2014514739A (en) | 2014-06-19 |
IL228000B (en) | 2018-11-29 |
EP2686737A4 (en) | 2014-09-03 |
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