WO2012118898A3 - Isolating segmented radiation detectors using alumina - Google Patents

Isolating segmented radiation detectors using alumina Download PDF

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Publication number
WO2012118898A3
WO2012118898A3 PCT/US2012/027140 US2012027140W WO2012118898A3 WO 2012118898 A3 WO2012118898 A3 WO 2012118898A3 US 2012027140 W US2012027140 W US 2012027140W WO 2012118898 A3 WO2012118898 A3 WO 2012118898A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
type
alumina
detectors
isolating
Prior art date
Application number
PCT/US2012/027140
Other languages
French (fr)
Other versions
WO2012118898A2 (en
Inventor
Marc Christophersen
Bernard F. Phlips
Original Assignee
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Government Of The United States Of America, As Represented By The Secretary Of The Navy filed Critical The Government Of The United States Of America, As Represented By The Secretary Of The Navy
Publication of WO2012118898A2 publication Critical patent/WO2012118898A2/en
Publication of WO2012118898A3 publication Critical patent/WO2012118898A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Abstract

Radiation detectors can be made of n-type (614) or p-type (114) silicon. All segmented detectors on p- type (114) silicon and double-sided detectors on n-type (614) silicon require an "inter-segment isolation" to separate the n-type strips (104) from each other; an alumina (506) layer for isolating the strip detectors is applied, and forms negative charges at the silicon interface (130) with appropriate densities. When alumina (506) dielectric is deposited on silicon 108, the negative interface charge acts like an effective p-stop (404) or p-spray (402) barrier because electrons are "pushed" away from the interface (130) due to the negative interface charge.
PCT/US2012/027140 2011-03-01 2012-02-29 Isolating segmented radiation detectors using alumina WO2012118898A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161447752P 2011-03-01 2011-03-01
US61/447,752 2011-03-01

Publications (2)

Publication Number Publication Date
WO2012118898A2 WO2012118898A2 (en) 2012-09-07
WO2012118898A3 true WO2012118898A3 (en) 2014-04-10

Family

ID=46758478

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/027140 WO2012118898A2 (en) 2011-03-01 2012-02-29 Isolating segmented radiation detectors using alumina

Country Status (1)

Country Link
WO (1) WO2012118898A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455858B1 (en) * 2000-08-13 2002-09-24 Photon Imaging, Inc. Semiconductor radiation detector
US7060523B2 (en) * 2003-05-12 2006-06-13 The Regents Of The University Of California Lithium-drifted silicon detector with segmented contacts
US7205632B2 (en) * 2004-04-05 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
US7223982B1 (en) * 2006-02-22 2007-05-29 Redlen Technologies Segmented radiation detector with side shielding cathode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455858B1 (en) * 2000-08-13 2002-09-24 Photon Imaging, Inc. Semiconductor radiation detector
US7060523B2 (en) * 2003-05-12 2006-06-13 The Regents Of The University Of California Lithium-drifted silicon detector with segmented contacts
US7205632B2 (en) * 2004-04-05 2007-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
US7223982B1 (en) * 2006-02-22 2007-05-29 Redlen Technologies Segmented radiation detector with side shielding cathode

Also Published As

Publication number Publication date
WO2012118898A2 (en) 2012-09-07

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