WO2012109094A3 - Magnetic random access memory devices configured for self-referenced read operation - Google Patents

Magnetic random access memory devices configured for self-referenced read operation Download PDF

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Publication number
WO2012109094A3
WO2012109094A3 PCT/US2012/023682 US2012023682W WO2012109094A3 WO 2012109094 A3 WO2012109094 A3 WO 2012109094A3 US 2012023682 W US2012023682 W US 2012023682W WO 2012109094 A3 WO2012109094 A3 WO 2012109094A3
Authority
WO
WIPO (PCT)
Prior art keywords
random access
access memory
read operation
magnetic random
layer
Prior art date
Application number
PCT/US2012/023682
Other languages
French (fr)
Other versions
WO2012109094A2 (en
Inventor
Neal Berger
Mourad El Baraji
Original Assignee
Crocus Technology Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crocus Technology Inc. filed Critical Crocus Technology Inc.
Priority to EP12744425.5A priority Critical patent/EP2673779B1/en
Publication of WO2012109094A2 publication Critical patent/WO2012109094A2/en
Publication of WO2012109094A3 publication Critical patent/WO2012109094A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Abstract

A magnetic random access memory cell includes a sense layer, a storage layer, and a spacer layer disposed between the sense layer and the storage layer. During a write operation, the storage layer has a magnetization direction that is switchable between m directions to store data corresponding to one of m logic states, with m > 2. During a read operation, the sense layer has a magnetization direction that is varied, relative to the magnetization direction of the storage layer, to determine the data stored by the storage layer.
PCT/US2012/023682 2011-02-08 2012-02-02 Magnetic random access memory devices configured for self-referenced read operation WO2012109094A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12744425.5A EP2673779B1 (en) 2011-02-08 2012-02-02 Magnetic random access memory devices configured for self-referenced read operation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/023,442 2011-02-08
US13/023,442 US8467234B2 (en) 2011-02-08 2011-02-08 Magnetic random access memory devices configured for self-referenced read operation

Publications (2)

Publication Number Publication Date
WO2012109094A2 WO2012109094A2 (en) 2012-08-16
WO2012109094A3 true WO2012109094A3 (en) 2012-10-18

Family

ID=46600547

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/023682 WO2012109094A2 (en) 2011-02-08 2012-02-02 Magnetic random access memory devices configured for self-referenced read operation

Country Status (4)

Country Link
US (1) US8467234B2 (en)
EP (1) EP2673779B1 (en)
TW (1) TWI525612B (en)
WO (1) WO2012109094A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8576615B2 (en) 2011-06-10 2013-11-05 Crocus Technology Inc. Magnetic random access memory devices including multi-bit cells
US8488372B2 (en) 2011-06-10 2013-07-16 Crocus Technology Inc. Magnetic random access memory devices including multi-bit cells
EP2608208B1 (en) * 2011-12-22 2015-02-11 Crocus Technology S.A. Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation
US8917531B2 (en) 2013-03-14 2014-12-23 International Business Machines Corporation Cell design for embedded thermally-assisted MRAM
US9406870B2 (en) 2014-04-09 2016-08-02 International Business Machines Corporation Multibit self-reference thermally assisted MRAM
EP2942780B1 (en) * 2014-05-09 2019-10-30 Crocus Technology S.A. Multi-bit MRAM cell and method for writing and reading to such MRAM cell
EP2958108B1 (en) 2014-06-17 2019-08-28 CROCUS Technology Self-referenced multibit MRAM cell having a synthetic antiferromagnetic storage layer
US9524765B2 (en) 2014-08-15 2016-12-20 Qualcomm Incorporated Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080247072A1 (en) * 2007-03-29 2008-10-09 Commissariat A L'energie Atomique Magnetic tunnel junction magnetic memory
US20090073755A1 (en) * 2006-03-15 2009-03-19 Honeywell International Inc. MRAM read bit with askew fixed layer
KR20090112037A (en) * 2008-04-23 2009-10-28 주식회사 하이닉스반도체 Method for recording multi-bit using magnetic reluctance element and magnetic random access memory using the same
WO2010064476A1 (en) * 2008-12-02 2010-06-10 富士電機ホールディングス株式会社 Magnetic memory element and nonvolatile storage device

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917749A (en) * 1997-05-23 1999-06-29 Motorola, Inc. MRAM cell requiring low switching field
US5959880A (en) * 1997-12-18 1999-09-28 Motorola, Inc. Low aspect ratio magnetoresistive tunneling junction
US5982660A (en) * 1998-08-27 1999-11-09 Hewlett-Packard Company Magnetic memory cell with off-axis reference layer orientation for improved response
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
SG115462A1 (en) 2002-03-12 2005-10-28 Inst Data Storage Multi-stage per cell magnetoresistive random access memory
US6657889B1 (en) * 2002-06-28 2003-12-02 Motorola, Inc. Memory having write current ramp rate control
US6577529B1 (en) * 2002-09-03 2003-06-10 Hewlett-Packard Development Company, L.P. Multi-bit magnetic memory device
US7190611B2 (en) * 2003-01-07 2007-03-13 Grandis, Inc. Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US6714442B1 (en) 2003-01-17 2004-03-30 Motorola, Inc. MRAM architecture with a grounded write bit line and electrically isolated read bit line
WO2004097809A1 (en) 2003-05-02 2004-11-11 Fujitsu Limited Magnetic recording medium, magnetic storage apparatus and method of producing magnetic recording medium
US6794697B1 (en) * 2003-10-01 2004-09-21 Hewlett-Packard Development Company, L.P. Asymmetric patterned magnetic memory
US7053430B2 (en) 2003-11-12 2006-05-30 Honeywell International Inc. Antiferromagnetic stabilized storage layers in GMRAM storage devices
US7023724B2 (en) 2004-01-10 2006-04-04 Honeywell International Inc. Pseudo tunnel junction
US7502248B2 (en) * 2004-05-21 2009-03-10 Samsung Electronics Co., Ltd. Multi-bit magnetic random access memory device
EP1768840B1 (en) * 2004-07-13 2014-09-03 The Regents of The University of California Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage
KR100590563B1 (en) * 2004-10-27 2006-06-19 삼성전자주식회사 Multi-bit MRAM and methods of operating and manufacturing the same
US6937497B1 (en) * 2004-11-18 2005-08-30 Maglabs, Inc. Magnetic random access memory with stacked toggle memory cells
US7133309B2 (en) 2005-01-10 2006-11-07 International Business Machines Corporation Method and structure for generating offset fields for use in MRAM devices
US7443639B2 (en) 2005-04-04 2008-10-28 International Business Machines Corporation Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials
KR100657956B1 (en) 2005-04-06 2006-12-14 삼성전자주식회사 Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
US8058696B2 (en) 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US8018011B2 (en) 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US7903452B2 (en) * 2006-06-23 2011-03-08 Qimonda Ag Magnetoresistive memory cell
KR100885184B1 (en) 2007-01-30 2009-02-23 삼성전자주식회사 Memory Devices Having Resistance Property Capable Of Being Independently Controlled By Electric And Magnetic Fields And Methods Of Operating The Same
KR100862183B1 (en) * 2007-06-29 2008-10-09 고려대학교 산학협력단 Magnetic memory device
US20090027948A1 (en) * 2007-07-24 2009-01-29 Manfred Ruehrig Integrated Circuits, Method of Programming a Cell, Thermal Select Magnetoresistive Element, Memory Module
KR101311577B1 (en) 2007-07-25 2013-09-26 삼성전자주식회사 Method for visible communication in a visible light cimmunication
KR101425958B1 (en) 2007-09-06 2014-08-04 삼성전자주식회사 Memory system capable of storing multi-bit data and its read method
US7706176B2 (en) * 2008-01-07 2010-04-27 Qimonda Ag Integrated circuit, cell arrangement, method for manufacturing an integrated circuit and for reading a memory cell status, memory module
KR20090096294A (en) 2008-03-07 2009-09-10 삼성전자주식회사 Multi-level nonvolatile memory device using variable resistive element
US7746687B2 (en) 2008-09-30 2010-06-29 Seagate Technology, Llc Thermally assisted multi-bit MRAM
EP2270812B1 (en) 2009-07-02 2017-01-18 CROCUS Technology Ultimate magnetic random access memory-based ternay CAM
EP2276034B1 (en) 2009-07-13 2016-04-27 Crocus Technology S.A. Self-referenced magnetic random access memory cell
US8331141B2 (en) * 2009-08-05 2012-12-11 Alexander Mikhailovich Shukh Multibit cell of magnetic random access memory with perpendicular magnetization
US8279662B2 (en) * 2010-11-11 2012-10-02 Seagate Technology Llc Multi-bit magnetic memory with independently programmable free layer domains
US8625336B2 (en) * 2011-02-08 2014-01-07 Crocus Technology Inc. Memory devices with series-interconnected magnetic random access memory cells
US8488372B2 (en) 2011-06-10 2013-07-16 Crocus Technology Inc. Magnetic random access memory devices including multi-bit cells
US8576615B2 (en) 2011-06-10 2013-11-05 Crocus Technology Inc. Magnetic random access memory devices including multi-bit cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090073755A1 (en) * 2006-03-15 2009-03-19 Honeywell International Inc. MRAM read bit with askew fixed layer
US20080247072A1 (en) * 2007-03-29 2008-10-09 Commissariat A L'energie Atomique Magnetic tunnel junction magnetic memory
KR20090112037A (en) * 2008-04-23 2009-10-28 주식회사 하이닉스반도체 Method for recording multi-bit using magnetic reluctance element and magnetic random access memory using the same
WO2010064476A1 (en) * 2008-12-02 2010-06-10 富士電機ホールディングス株式会社 Magnetic memory element and nonvolatile storage device

Also Published As

Publication number Publication date
US8467234B2 (en) 2013-06-18
WO2012109094A2 (en) 2012-08-16
EP2673779A4 (en) 2018-01-03
EP2673779B1 (en) 2019-08-28
US20120201074A1 (en) 2012-08-09
EP2673779A2 (en) 2013-12-18
TWI525612B (en) 2016-03-11
TW201237864A (en) 2012-09-16

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