WO2012109094A3 - Magnetic random access memory devices configured for self-referenced read operation - Google Patents

Magnetic random access memory devices configured for self-referenced read operation Download PDF

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Publication number
WO2012109094A3
WO2012109094A3 PCT/US2012/023682 US2012023682W WO2012109094A3 WO 2012109094 A3 WO2012109094 A3 WO 2012109094A3 US 2012023682 W US2012023682 W US 2012023682W WO 2012109094 A3 WO2012109094 A3 WO 2012109094A3
Authority
WO
WIPO (PCT)
Prior art keywords
random access
access memory
read operation
magnetic random
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/023682
Other languages
French (fr)
Other versions
WO2012109094A2 (en
Inventor
Neal Berger
Mourad El Baraji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Crocus Technology Inc
Original Assignee
Crocus Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crocus Technology Inc filed Critical Crocus Technology Inc
Priority to EP12744425.5A priority Critical patent/EP2673779B1/en
Publication of WO2012109094A2 publication Critical patent/WO2012109094A2/en
Publication of WO2012109094A3 publication Critical patent/WO2012109094A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

A magnetic random access memory cell includes a sense layer, a storage layer, and a spacer layer disposed between the sense layer and the storage layer. During a write operation, the storage layer has a magnetization direction that is switchable between m directions to store data corresponding to one of m logic states, with m > 2. During a read operation, the sense layer has a magnetization direction that is varied, relative to the magnetization direction of the storage layer, to determine the data stored by the storage layer.
PCT/US2012/023682 2011-02-08 2012-02-02 Magnetic random access memory devices configured for self-referenced read operation Ceased WO2012109094A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12744425.5A EP2673779B1 (en) 2011-02-08 2012-02-02 Magnetic random access memory devices configured for self-referenced read operation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/023,442 US8467234B2 (en) 2011-02-08 2011-02-08 Magnetic random access memory devices configured for self-referenced read operation
US13/023,442 2011-02-08

Publications (2)

Publication Number Publication Date
WO2012109094A2 WO2012109094A2 (en) 2012-08-16
WO2012109094A3 true WO2012109094A3 (en) 2012-10-18

Family

ID=46600547

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/023682 Ceased WO2012109094A2 (en) 2011-02-08 2012-02-02 Magnetic random access memory devices configured for self-referenced read operation

Country Status (4)

Country Link
US (1) US8467234B2 (en)
EP (1) EP2673779B1 (en)
TW (1) TWI525612B (en)
WO (1) WO2012109094A2 (en)

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US8576615B2 (en) 2011-06-10 2013-11-05 Crocus Technology Inc. Magnetic random access memory devices including multi-bit cells
US8488372B2 (en) 2011-06-10 2013-07-16 Crocus Technology Inc. Magnetic random access memory devices including multi-bit cells
EP2608208B1 (en) * 2011-12-22 2015-02-11 Crocus Technology S.A. Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation
US8917531B2 (en) 2013-03-14 2014-12-23 International Business Machines Corporation Cell design for embedded thermally-assisted MRAM
US9406870B2 (en) 2014-04-09 2016-08-02 International Business Machines Corporation Multibit self-reference thermally assisted MRAM
EP2942780B1 (en) 2014-05-09 2019-10-30 Crocus Technology S.A. Multi-bit MRAM cell and method for writing and reading to such MRAM cell
EP2958108B1 (en) 2014-06-17 2019-08-28 CROCUS Technology Self-referenced multibit MRAM cell having a synthetic antiferromagnetic storage layer
US9524765B2 (en) 2014-08-15 2016-12-20 Qualcomm Incorporated Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion

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KR20090112037A (en) * 2008-04-23 2009-10-28 주식회사 하이닉스반도체 Multi-bit recording method using magnetoresistive element and MRAM using the same
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US20080247072A1 (en) * 2007-03-29 2008-10-09 Commissariat A L'energie Atomique Magnetic tunnel junction magnetic memory
KR20090112037A (en) * 2008-04-23 2009-10-28 주식회사 하이닉스반도체 Multi-bit recording method using magnetoresistive element and MRAM using the same
WO2010064476A1 (en) * 2008-12-02 2010-06-10 富士電機ホールディングス株式会社 Magnetic memory element and nonvolatile storage device

Also Published As

Publication number Publication date
WO2012109094A2 (en) 2012-08-16
TW201237864A (en) 2012-09-16
EP2673779A4 (en) 2018-01-03
EP2673779B1 (en) 2019-08-28
EP2673779A2 (en) 2013-12-18
TWI525612B (en) 2016-03-11
US8467234B2 (en) 2013-06-18
US20120201074A1 (en) 2012-08-09

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