WO2012109069A3 - Pvd sputtering target with a protected backing plate - Google Patents

Pvd sputtering target with a protected backing plate Download PDF

Info

Publication number
WO2012109069A3
WO2012109069A3 PCT/US2012/023474 US2012023474W WO2012109069A3 WO 2012109069 A3 WO2012109069 A3 WO 2012109069A3 US 2012023474 W US2012023474 W US 2012023474W WO 2012109069 A3 WO2012109069 A3 WO 2012109069A3
Authority
WO
WIPO (PCT)
Prior art keywords
backing plate
copper
pvd
protective coating
coating layer
Prior art date
Application number
PCT/US2012/023474
Other languages
French (fr)
Other versions
WO2012109069A2 (en
Inventor
Muhammad M. Rasheed
Rongjun Wang
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020137023437A priority Critical patent/KR101938851B1/en
Priority to CN201280007376.4A priority patent/CN103348037B/en
Priority to JP2013553463A priority patent/JP6130304B2/en
Publication of WO2012109069A2 publication Critical patent/WO2012109069A2/en
Publication of WO2012109069A3 publication Critical patent/WO2012109069A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/04—Alloys based on copper with zinc as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer - usually containing a nickel material - covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.
PCT/US2012/023474 2011-02-09 2012-02-01 Pvd sputtering target with a protected backing plate WO2012109069A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020137023437A KR101938851B1 (en) 2011-02-09 2012-02-01 Pvd sputtering target with a protected backing plate
CN201280007376.4A CN103348037B (en) 2011-02-09 2012-02-01 There is the PVD sputtering target of shielded backboard
JP2013553463A JP6130304B2 (en) 2011-02-09 2012-02-01 PVD sputtering target with protected backing plate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/024,198 2011-02-09
US13/024,198 US8968537B2 (en) 2011-02-09 2011-02-09 PVD sputtering target with a protected backing plate

Publications (2)

Publication Number Publication Date
WO2012109069A2 WO2012109069A2 (en) 2012-08-16
WO2012109069A3 true WO2012109069A3 (en) 2013-01-03

Family

ID=46599914

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/023474 WO2012109069A2 (en) 2011-02-09 2012-02-01 Pvd sputtering target with a protected backing plate

Country Status (6)

Country Link
US (1) US8968537B2 (en)
JP (1) JP6130304B2 (en)
KR (1) KR101938851B1 (en)
CN (1) CN103348037B (en)
TW (1) TWI540216B (en)
WO (1) WO2012109069A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9534286B2 (en) * 2013-03-15 2017-01-03 Applied Materials, Inc. PVD target for self-centering process shield
JP2016531203A (en) 2013-08-01 2016-10-06 エイチ．シー． スターク インコーポレイテッド Partial spray repair of sputtering targets
CN104416253B (en) * 2013-09-02 2016-08-31 宁波江丰电子材料股份有限公司 The forming method of backboard and backboard
KR102112912B1 (en) * 2013-11-06 2020-05-19 제이엑스금속주식회사 Sputtering target/backing plate assembly
TWI491449B (en) * 2014-01-29 2015-07-11 Taiwan Green Point Entpr Co Painting and shielding fixture and painting method
US9644269B2 (en) 2014-01-30 2017-05-09 Varian Semiconductor Equipment Associates, Inc Diffusion resistant electrostatic clamp
US20160333460A1 (en) * 2014-03-26 2016-11-17 Jx Nippon Mining & Metals Corporation Sputtering target comprising tungsten carbide or titanium carbide
US20160053365A1 (en) * 2014-08-20 2016-02-25 Honeywell International Inc. Encapsulated composite backing plate
JP6672595B2 (en) 2015-03-17 2020-03-25 凸版印刷株式会社 Film forming equipment
US9397011B1 (en) * 2015-04-13 2016-07-19 Lam Research Corporation Systems and methods for reducing copper contamination due to substrate processing chambers with components made of alloys including copper
JP6126648B2 (en) * 2015-06-26 2017-05-10 田中貴金属工業株式会社 Platinum alloy target
WO2017053771A1 (en) 2015-09-25 2017-03-30 Applied Materials, Inc. Grooved backing plate for standing wave compensation
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
JP2018535324A (en) * 2015-11-24 2018-11-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Precoated shield for use in VHF-RF PVD chambers
US10699878B2 (en) * 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
CN108690961A (en) * 2017-04-06 2018-10-23 北京北方华创微电子装备有限公司 Magnetron sputtering component, magnetron sputtering chamber and magnetron sputtering apparatus
US10570504B2 (en) 2017-04-26 2020-02-25 International Business Machines Corporation Structure and method to fabricate highly reactive physical vapor deposition target
CN109385608A (en) * 2017-08-08 2019-02-26 宁波江丰电子材料股份有限公司 Target material assembly and its manufacturing method
KR102300756B1 (en) * 2017-11-21 2021-09-10 와틀로 일렉트릭 매뉴팩츄어링 컴파니 Ceramic pedestal with atomic protective layer
US11584985B2 (en) * 2018-08-13 2023-02-21 Honeywell International Inc. Sputter trap having a thin high purity coating layer and method of making the same
TWI672387B (en) * 2018-08-28 2019-09-21 住華科技股份有限公司 Sputtering target and method for using the same
US11114288B2 (en) * 2019-02-08 2021-09-07 Applied Materials, Inc. Physical vapor deposition apparatus
CN112210763B (en) * 2019-07-11 2022-05-24 联芯集成电路制造(厦门)有限公司 Method for depositing a metal layer on a wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282943A (en) * 1992-06-10 1994-02-01 Tosoh Smd, Inc. Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby
US20060070876A1 (en) * 2004-02-03 2006-04-06 Wu Chi T Physical vapor deposition target constructions
US20070039818A1 (en) * 2002-04-09 2007-02-22 Fujitsu Limited Method for fabricating a sputtering target
US7833387B2 (en) * 2004-01-07 2010-11-16 Hoya Corporation Mask blank manufacturing method and sputtering target for manufacturing the same

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855612A (en) * 1972-01-03 1974-12-17 Signetics Corp Schottky barrier diode semiconductor structure and method
JPH0730681Y2 (en) * 1988-09-19 1995-07-12 日電アネルバ株式会社 Sputtering cathode
JPH04314857A (en) * 1991-04-15 1992-11-06 Mitsubishi Kasei Corp Backing plate for sputtering device
US5593082A (en) * 1994-11-15 1997-01-14 Tosoh Smd, Inc. Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby
US6045670A (en) * 1997-01-08 2000-04-04 Applied Materials, Inc. Back sputtering shield
JP4551561B2 (en) * 1999-12-28 2010-09-29 株式会社東芝 Vacuum film forming apparatus parts, vacuum film forming apparatus using the same, and target apparatus
JP4817486B2 (en) * 2000-09-29 2011-11-16 株式会社東芝 Tungsten powder, manufacturing method thereof, sputter target and cutting tool
DE60236264D1 (en) * 2001-04-24 2010-06-17 Tosoh Smd Inc PROCESS FOR OPTIMIZING THE TARGET PROFILE
US20020162741A1 (en) 2001-05-01 2002-11-07 Applied Materials, Inc. Multi-material target backing plate
US6764265B2 (en) 2002-01-07 2004-07-20 Applied Materials Inc. Erosion resistant slit valve
US6822158B2 (en) * 2002-03-11 2004-11-23 Sharp Kabushiki Kaisha Thin-film solar cell and manufacture method therefor
WO2005007920A2 (en) * 2003-07-14 2005-01-27 Tosoh Smd, Inc. Sputtering target assembly having low conductivity backing plate and method of making same
US7611610B2 (en) * 2003-11-18 2009-11-03 Fei Company Method and apparatus for controlling topographical variation on a milled cross-section of a structure
US20050178653A1 (en) * 2004-02-17 2005-08-18 Charles Fisher Method for elimination of sputtering into the backing plate of a target/backing plate assembly
KR100925691B1 (en) * 2004-03-01 2009-11-10 닛코킨조쿠 가부시키가이샤 Ni-Pt ALLOY AND TARGET COMPRISING THE ALLOY
US8252126B2 (en) * 2004-05-06 2012-08-28 Global Advanced Metals, Usa, Inc. Sputter targets and methods of forming same by rotary axial forging
US7550066B2 (en) 2004-07-09 2009-06-23 Applied Materials, Inc. Staggered target tiles
US20060024451A1 (en) 2004-07-30 2006-02-02 Applied Materials Inc. Enhanced magnetic shielding for plasma-based semiconductor processing tool
US7316763B2 (en) 2005-05-24 2008-01-08 Applied Materials, Inc. Multiple target tiles with complementary beveled edges forming a slanted gap therebetween
US20060266639A1 (en) 2005-05-24 2006-11-30 Applied Materials, Inc. Sputtering target tiles having structured edges separated by a gap
US7550055B2 (en) 2005-05-31 2009-06-23 Applied Materials, Inc. Elastomer bonding of large area sputtering target
US20060289305A1 (en) 2005-06-27 2006-12-28 Applied Materials, Inc. Centering mechanism for aligning sputtering target tiles
US8097133B2 (en) 2005-07-19 2012-01-17 Applied Materials, Inc. Evacuable magnetron chamber
US7811411B2 (en) 2005-08-09 2010-10-12 Applied Materials, Inc. Thermal management of inductively coupled plasma reactors
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056845A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Multiple zone sputtering target created through conductive and insulation bonding
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US8157973B2 (en) * 2006-06-29 2012-04-17 Jx Nippon Mining & Metals Corporation Sputtering target/backing plate bonded body
US7476289B2 (en) 2006-06-29 2009-01-13 Applied Materials, Inc. Vacuum elastomer bonding apparatus and method
US20080188090A1 (en) 2007-02-02 2008-08-07 Applied Materials, Inc. Internal balanced coil for inductively coupled high density plasma processing chamber
US7789993B2 (en) 2007-02-02 2010-09-07 Applied Materials, Inc. Internal balanced coil for inductively coupled high density plasma processing chamber
US7572647B2 (en) 2007-02-02 2009-08-11 Applied Materials, Inc. Internal balanced coil for inductively coupled high density plasma processing chamber
JP2008306180A (en) 2007-05-21 2008-12-18 Applied Materials Inc Method and apparatus for controlling polishing profile of film on slope and edge of substrate
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US20090025636A1 (en) 2007-07-27 2009-01-29 Applied Materials, Inc. High profile minimum contact process kit for hdp-cvd application
US9202736B2 (en) 2007-07-31 2015-12-01 Applied Materials, Inc. Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
US7848076B2 (en) 2007-07-31 2010-12-07 Applied Materials, Inc. Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
US8108981B2 (en) 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
US8252410B2 (en) 2007-09-05 2012-08-28 Applied Materials, Inc. Ceramic cover wafers of aluminum nitride or beryllium oxide
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US20090197015A1 (en) 2007-12-25 2009-08-06 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
US20090258162A1 (en) 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
US8409355B2 (en) 2008-04-24 2013-04-02 Applied Materials, Inc. Low profile process kit
US9222172B2 (en) 2008-08-20 2015-12-29 Applied Materials, Inc. Surface treated aluminum nitride baffle
US8133368B2 (en) 2008-10-31 2012-03-13 Applied Materials, Inc. Encapsulated sputtering target
US9714465B2 (en) 2008-12-01 2017-07-25 Applied Materials, Inc. Gas distribution blocker apparatus
US9752228B2 (en) 2009-04-03 2017-09-05 Applied Materials, Inc. Sputtering target for PVD chamber
WO2010115128A2 (en) 2009-04-03 2010-10-07 Applied Materials, Inc. High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process
US20100288631A1 (en) 2009-05-12 2010-11-18 Solar Applied Materials Technology Corp. Ceramic sputtering target assembly and a method for producing the same
KR20120089647A (en) 2009-08-11 2012-08-13 어플라이드 머티어리얼스, 인코포레이티드 Process kit for rf physical vapor deposition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282943A (en) * 1992-06-10 1994-02-01 Tosoh Smd, Inc. Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby
US20070039818A1 (en) * 2002-04-09 2007-02-22 Fujitsu Limited Method for fabricating a sputtering target
US7833387B2 (en) * 2004-01-07 2010-11-16 Hoya Corporation Mask blank manufacturing method and sputtering target for manufacturing the same
US20060070876A1 (en) * 2004-02-03 2006-04-06 Wu Chi T Physical vapor deposition target constructions

Also Published As

Publication number Publication date
US20120199469A1 (en) 2012-08-09
TW201243078A (en) 2012-11-01
JP2014508222A (en) 2014-04-03
CN103348037B (en) 2016-01-20
JP6130304B2 (en) 2017-05-17
KR101938851B1 (en) 2019-01-15
KR20140044306A (en) 2014-04-14
CN103348037A (en) 2013-10-09
TWI540216B (en) 2016-07-01
WO2012109069A2 (en) 2012-08-16
US8968537B2 (en) 2015-03-03

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