WO2012108426A1

WO2012108426A1 - Deposition apparatus and deposition method

Info

Publication number: WO2012108426A1
Application number: PCT/JP2012/052735
Authority: WO
Inventors: 廣治鳴海; 正浩市原; 博之田村; 松本　栄一; 三之田島; 永田　博彰; 吉岡　正樹
Original assignee: キヤノントッキ株式会社
Priority date: 2011-02-10
Filing date: 2012-02-07
Publication date: 2012-08-16
Also published as: JP5616812B2; KR101941305B1; TW201247912A; JP2012167309A; KR20140018232A

Abstract

Provided is an epoch-making deposition apparatus, which can prevent a deposition mask from warping due to heat, and which can perform highly accurate deposition, since a deposition film in a film-forming pattern can be deposited in a wide range using the deposition mask, even a small deposition mask (2), by relatively moving a large substrate (4) with a space between the substrate and the deposition mask, and since the deposition mask (2) can be maintained at a constant temperature by sufficiently suppressing an increase of the temperature of the deposition mask. In the deposition apparatus, the substrate (4) and the deposition mask (2) are disposed with the space therebetween, a mask holder (6) is disposed between the substrate (4) and an evaporation source (1), said mask holder constituting a scatter limiting section that is provided with a limiting opening (5), the deposition mask (2) is attached to the mask holder (6) by bonding the deposition mask to the mask holder, the mask holder (6) is provided with a temperature control mechanism (9) that maintains the temperature of the deposition mask (2), and the highly accurate deposition film in the film-forming pattern can be formed in a range wider than the deposition mask (2) by relatively moving the substrate (4) with respect to the deposition mask (2).

Description

Vapor deposition apparatus and vapor deposition method

The present invention relates to a vapor deposition apparatus and a vapor deposition method for forming a vapor deposition film having a film formation pattern using a vapor deposition mask on a substrate.

In recent years, organic EL display devices using organic electroluminescence elements have attracted attention as display devices that replace CRTs and LCDs.

An organic EL device such as an organic EL display device has a configuration in which an electrode layer and a light emitting layer in which a plurality of organic layers are laminated are formed on a substrate, and a sealing layer is further formed on the substrate. Compared with high-speed response, a high viewing angle and high contrast can be realized.

Such an organic EL device is generally manufactured by a vacuum vapor deposition method, in which a substrate and a vapor deposition mask are aligned and closely adhered in a vacuum chamber, and a vapor deposition film having a desired film formation pattern is formed on the substrate by the vapor deposition mask. Is formed.

Moreover, in the manufacture of such an organic EL device, the vapor deposition mask for obtaining a desired film formation pattern is enlarged with an increase in the size of the substrate. To increase the size, tension was applied to the vapor deposition mask. Therefore, it is difficult to manufacture a large evaporation mask because it must be welded and fixed to the mask frame. In consideration of these factors, the mask frame becomes large in order to take these into consideration, and the increase in thickness and weight becomes significant in order to obtain accuracy. In addition, an invar material having a small linear expansion coefficient is used for the mask frame in order to prevent deterioration of mask accuracy due to thermal expansion, but it is expensive.

As described above, it is required to increase the size of the vapor deposition mask as the substrate size increases, but it is difficult to increase the size of the high-definition mask. Has occurred.

Further, as shown in, for example, JP-T-2010-511784, the substrate and the vapor deposition mask are spaced apart from each other, and the organic light-emitting layer is formed with high accuracy by an opening that generates vapor particles having directivity from the evaporation source. However, the evaporation source and the opening for generating directivity have an integrated structure, and the integrated structure is heated to a high temperature to generate evaporated particles from the opening. Therefore, the deposition mask receives the radiant heat from the evaporation source, which has no effect of keeping the mask temperature constant during the deposition, and prevents the deterioration of the position accuracy of the film formation pattern due to the thermal expansion of the deposition mask. Can not.

That is, since the vapor deposition mask becomes high temperature and expands due to thermal expansion, the pitch distance between the mask opening itself and the mask opening extends, and the deposition pattern itself on the substrate formed by the vapor deposition mask increases. The accuracy and the alignment accuracy of the film formation pattern are lowered.

Furthermore, by adopting a configuration in which the substrate and the vapor deposition mask are spaced apart and relatively moved, a desired film formation pattern can be vapor-deposited over a large area even with a small vapor deposition mask. Since they are separated from each other, the temperature increase of the vapor deposition mask cannot be further prevented, and the vapor deposition mask is subject to thermal deformation and distortion due to the temperature increase as described above, and the vapor deposition accuracy is extremely inferior.

When the substrate and the evaporation mask are adhered and polymerized as before, the radiant heat to the evaporation mask escapes to the substrate and is radiated.

However, if the substrate is moved relative to the vapor deposition mask while the substrate and the vapor deposition mask are separated from each other, as described above, the temperature rise of the vapor deposition mask is remarkably caused by distortion due to this thermal expansion, and the position accuracy of the film formation pattern is extremely inferior. End up.

JP 2010-511784 gazette

The present invention solves these various problems, and does not increase the size of the vapor deposition mask to the same size as the substrate is enlarged. Evaporation film with a deposition pattern can be deposited using a vapor deposition mask, and the structure can be simply and efficiently deposited by moving the film in a separated state, and the restriction opening can be evaporated even when the vapor deposition mask is in a separated state. By providing it between the source and the vapor deposition mask, it is possible to limit the scattering direction of the vaporized particles and prevent vapor deposition particles from passing through the vaporization port at adjacent or separated positions from passing each other and A vapor deposition mask is attached in contact with a mask holder having a scattering restriction portion provided with a restriction opening, and at least one of the mask holder or the vapor deposition mask is attached. By providing a temperature control mechanism that maintains the temperature of the deposition mask, this mask holder not only serves as a scattering limiter, but also exhibits a temperature holding function that suppresses the incidence of radiation heat from the evaporation source and suppresses the deposition mask temperature rise. The temperature of the vapor deposition mask can be kept constant, thereby preventing distortion of the vapor deposition mask due to heat, and the substrate and the vapor deposition mask can be moved relative to each other in a separated state, but highly accurate vapor deposition can be performed. An object of the present invention is to provide a vapor deposition apparatus and a vapor deposition method.

Especially in the manufacture of organic EL devices, it is possible to cope with the increase in size of the substrate, the organic light emitting layer can be deposited with high accuracy, and the damage of the substrate, the deposition mask, and the deposited film due to the mask contact can be prevented. It is an object of the present invention to provide a vapor deposition apparatus and a vapor deposition method for manufacturing an organic EL device that can realize vapor deposition.

The gist of the present invention will be described with reference to the accompanying drawings.

A film forming material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening 3 of the vapor deposition mask 2, and a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4. In the vapor deposition apparatus configured as described above, scattering of the evaporated particles of the film forming material evaporated from the evaporation source 1 is between the evaporation source 1 and the substrate 4 disposed in a state of being opposed to the evaporation source 1. A mask holder 6 having a scattering restriction portion provided with a restriction opening portion 5 for restricting the direction is provided, and the substrate 4 and the vapor deposition mask 2 provided in a separated state are joined to the mask holder 6 and attached. At least one of the mask holder 6 and the vapor deposition mask 2 is provided with a temperature control mechanism 9 for maintaining the temperature of the vapor deposition mask 2, and the substrate 4 is attached to the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1. On the other hand, it is configured to be relatively movable while maintaining a separated state from the vapor deposition mask 2, and by this relative movement, a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed in a wider area than the vapor deposition mask 2. 4 is a vapor deposition apparatus characterized in that the vapor deposition apparatus is formed on the upper surface.

Further, the evaporation source 1 containing the film forming material and the mask opening through which the evaporation particles of the film forming material evaporated from the evaporation port 8 of the evaporation source 1 pass in the vapor deposition chamber 7 in a reduced pressure atmosphere. The vapor deposition mask 2 provided with the portion 3 is disposed, a plurality of the evaporation port portions 8 are arranged in parallel, and the substrate 4 that is positioned in a separated state from the vapor deposition mask 2 is scattered from the plurality of evaporation port portions 8. The vaporized particles to be deposited pass through the mask opening 3 and a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4. The vaporization source 1, the vaporization source 1, The mask having the scattering restricting portion provided with the restricting opening portion 5 that does not allow the evaporated particles from the evaporation port portion 8 adjacent to or away from the substrate 4 disposed in an opposing state to pass therethrough. A holder 6 is provided, and this mask holder -6 is attached to the substrate 4 in a state of being separated from the substrate 4, and at least one of the mask holder 6 and the deposition mask 2 is controlled to keep the temperature of the deposition mask 2 from rising. The holding temperature control mechanism 9 is provided, and the substrate 4 is moved relative to the mask holder 6 to which the vapor deposition mask 2 is attached and the evaporation source 1 while maintaining the separated state from the vapor deposition mask 2. The vapor deposition film of the film formation pattern of the vapor deposition mask 2 is made continuous in this relative movement direction so that the vapor deposition film is formed over a wide range even with the vapor deposition mask 2 smaller than the substrate 4. This relates to the vapor deposition apparatus according to Item 1.

In addition, a plurality of the evaporation port portions 8 of the evaporation source 1 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4 and the restriction opening portion of the scattering restriction portion provided in the mask holder 6 5 are arranged side by side along the lateral direction, and the evaporated particles evaporating from the respective evaporation port portions 8 pass only through the opposed limiting opening 5 and further face the limiting opening 5. A vapor deposition film of the film formation pattern is formed on the substrate 4 through the mask opening 3 of the vapor deposition mask 2 so that the vaporized particles from the vaporization port 8 at adjacent or separated positions are attached and captured. 3. The vapor deposition apparatus according to claim 2, wherein the restricting opening portion 5 is configured to restrict a scattering direction of the evaporated particles.

The vapor deposition apparatus according to claim 1, wherein the vapor deposition mask 2 is attached to an end of the mask holder 6 on the substrate 4 side.

The vapor deposition apparatus according to claim 4, wherein a tension is applied to the vapor deposition mask 2 at an end of the mask holder 6 on the substrate 4 side.

6. The vapor deposition apparatus according to claim 5, wherein the mask holder 6 stretches the vapor deposition mask 2 by applying a tension in a relative movement direction of the substrate 4.

The vapor deposition mask 2 is divided into a plurality of pieces in the lateral direction orthogonal to the relative movement direction of the substrate 4, and the divided vapor deposition mask 2 is attached to the mask holder 6 in the lateral direction. It concerns on the vapor deposition apparatus of Claim 1 characterized by the above-mentioned.

In addition, a plurality of the evaporation ports 8 of the evaporation source 1 are juxtaposed in a lateral direction orthogonal to the relative movement direction of the substrate 4, and the restricting openings are respectively opposed to the one or a plurality of evaporation ports 8. The deposition mask 2 is attached to an end of the mask holder 6 on the substrate 4 side so as to cover each restriction opening 5 of the mask holder 6 having the scattering restriction portion provided with the portion 5. The vapor deposition apparatus according to claim 1.

Further, a rib portion 24 extending in the relative movement direction of the substrate 4 is provided between the restricting openings 5 of the mask holder 6, and each restricting portion is provided on the front end surface of the rib portion 24 on the substrate 4 side. 2. The vapor deposition apparatus according to claim 1, further comprising a mask mounting support surface for supporting and bonding the vapor deposition mask provided in the opening.

The mask holder 6 extends in the relative movement direction of the substrate 4 and deforms the mask holder 6 due to tension applied to the vapor deposition mask 2 when the vapor deposition mask 2 is stretched on the mask holder 6. In order to prevent this, the rib portion 24 for improving the rigidity of the mask holder 6 in the extending direction is provided between the restricting openings 5. is there.

The temperature control mechanism 9 includes a medium path 12 or a heat pipe for circulating a temperature-controlled medium around the restriction opening 5 of the mask holder 6 or between the restriction openings 5. The vapor deposition apparatus according to claim 1, wherein 22 is provided.

Further, the temperature control mechanism 9 is configured by providing the medium path 12 or the heat pipe 22 through which the medium flows in the mask holder 6 around the restriction opening 5 or between the restriction openings 5. The vapor deposition apparatus according to claim 11, wherein a plurality of stages are provided in a facing direction between the substrate 4 and the evaporation source 1.

Further, the temperature control mechanism 9 includes the evaporation source 1 side temperature controlled part 9A and the substrate 4 side temperature controlled part 9B in the mask holder 6, and each of the temperature controlled

parts

9A and 9B is provided. 13. The vapor deposition apparatus according to claim 12, wherein the medium path 12 through which the medium is circulated independently or the heat pipes 22 that are independent of each other is internally provided.

Further, the temperature control mechanism 9 is configured to cause the temperature gradient generated in the medium path 12 or the heat pipe 22 to be generated in different directions in the respective stages provided in the facing direction. 12. The vapor deposition apparatus according to claim 11, wherein the heat pipe 22 is arranged.

Furthermore, the temperature control mechanism 9 relates to the vapor deposition apparatus according to claim 9, wherein the medium path 12 or the heat pipe 22 is arranged in the rib portion 24.

Further, the temperature control mechanism 9 causes the temperature gradient generated in the medium path 12 or the heat pipe 22 disposed in the rib portion 24 to be generated in different directions between the adjacent rib portions 24. The vapor deposition apparatus according to claim 15, wherein the medium path 12 or the heat pipe 22 is arranged.

2. The mask holder 6 according to claim 1, wherein the restriction opening 5 is formed such that the opening area on the evaporation source 1 side is smaller than the opening area on the substrate 4 side. This relates to a vapor deposition apparatus.

Further, the independent evaporation source 1 side temperature control unit 9A and the substrate 4 side temperature control unit 9B are provided between the limiting openings 5 of the mask holder 6 so as to provide the evaporation source 1 side temperature control. The evaporation source by increasing the flow rate of the medium in the medium path 12 or the contact area with the medium, or the number of the heat pipes 22 or the cross-sectional area of the heat pipes 22 of the control unit 9A from the substrate 4 side temperature controlled unit 9B. 14. The vapor deposition apparatus according to claim 13, wherein the temperature control capability of the 1-side temperature control unit 9A is enhanced.

Further, a medium path 12 or a heat pipe through which a medium whose temperature is controlled by heat exchange is distributed around the mask opening 3 or between the mask openings 3 on the surface of the vapor deposition mask 2 on the substrate 4 side. The vapor deposition apparatus according to claim 1, wherein the temperature control mechanism 9 is provided on the vapor deposition mask 2.

2. The vapor deposition apparatus according to claim 1, wherein the evaporation port portion 8 of the evaporation source 1 has a slit shape that is long in the relative movement direction of the substrate 4 and narrow in the lateral direction. Is.

Further, when the substrate 4 and the vapor deposition mask 2 are vapor-deposited in a separated state and a vapor deposition film having a film formation pattern by the vapor deposition mask 2 is formed on the substrate 4, the shadow SH which is a side edge inclined portion of the vapor deposition film is When the gap between the substrate 4 and the vapor deposition mask 2 is G, the lateral opening width of the evaporation port 8 is φx, and the distance between the evaporation port 8 and the vapor deposition mask 2 is TS, It is expressed by the formula, and the configuration is such that the gap G can be set large by setting the opening width φx of the vapor deposition port portion 8 small so that the shadow SH does not reach the interval PP between adjacent vapor deposition films. The vapor deposition apparatus according to claim 20, wherein

Further, all or a part of the plurality of evaporation ports 8 arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrate 4 is provided in one evaporation source 1, and the film forming material is heated. The evaporation source 1 is composed of the evaporation particle generating section 26 that performs and the horizontally long diffusion section 27 that diffuses the evaporation particles generated from the evaporation particle generating section 26 and equalizes the pressure. 2. The vapor deposition apparatus according to claim 1, wherein a plurality of the mouth portions 8 are formed side by side in the lateral direction.

In addition, a plurality of the evaporation port portions 8 of the evaporation source 1 are arranged in a lateral direction orthogonal to the relative movement direction of the substrate 4, and each evaporation port portion 8 protrudes toward the substrate 4 side of the evaporation source 1. Provided at the tip of the evaporation port portion forming projection 28 to be cut off, and the heat shield for blocking the heat of the evaporation source 1 around the evaporation port portion formation protrusion 28 or between the evaporation port portion formation protrusions 28 The vapor deposition apparatus according to claim 1, wherein a portion 19 is provided.

A plurality of the mask openings 3 of the vapor deposition mask 2 are arranged side by side in a lateral direction orthogonal to the relative movement direction of the substrate 4, and each mask opening 3 is a slit long in the relative movement direction. A plurality of openings are formed in the relative movement direction, and the total opening length in the relative movement direction is set to be longer as the distance from the central portion of the restriction opening 5 is longer in the lateral direction. It concerns on the vapor deposition apparatus of Claim 1 characterized by the above-mentioned.

Further, the formation pitch in the lateral direction perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 of the vapor deposition mask 2 that determines the film formation pattern to be vapor deposited on the substrate 4 is the pitch of the film deposition pattern of the vapor deposition film. The gap G between the substrate 4 and the evaporation mask 2 and the distance between the substrate 4 and the evaporation source 1 are set narrower by a difference corresponding to at least one of the sizes, and the evaporation mask 2 The opening size in the lateral direction perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 is set to the gap G, the distance, and the evaporation of the evaporation source 1 rather than the pattern width of the deposition pattern of the vapor deposition film. 2. The vapor deposition apparatus according to claim 1, wherein the opening width φx in the lateral direction of the mouth portion 8 is set wide by a difference corresponding to at least one of the sizes. That.

The vapor deposition apparatus according to claim 1, wherein the mask holder (6) is connected to the temperature control mechanism (9) via a connecting portion (25) so as to be detachable from the vapor deposition apparatus. .

2. The vapor deposition apparatus according to claim 1, further comprising a cleaning mechanism for cleaning the film forming material attached to at least one of the mask holder 6 or the vapor deposition mask 2 attached to the mask holder 6. is there.

2. The vapor deposition apparatus according to claim 1, further comprising a material recovery mechanism 17 that recovers a film forming material attached to at least one of the mask holder 6 or the vapor deposition mask 2 attached to the mask holder 6. Is.

The vapor deposition apparatus according to claim 1, wherein a second vapor deposition mask 10 is disposed between the substrate 4 and the vapor deposition mask 2.

Further, the second mask opening 11 of the second vapor deposition mask 10 is larger than the mask opening 3 of the vapor deposition mask 2 located on the evaporation source 1 side from the second vapor deposition mask 10. At least the lateral opening pattern orthogonal to the relative movement direction of the substrate 4 is provided in the same pattern, and the opening formation pitch is different according to the difference in distance from the substrate 4, and the opening width is 30. The vapor deposition apparatus according to claim 29, wherein the vapor deposition apparatus is provided so as to be the same or narrower.

30. The vapor deposition apparatus according to claim 29, wherein the second vapor deposition mask 10 is formed of a material having a larger linear expansion coefficient than that of the vapor deposition mask 2 positioned on the evaporation source 1 side. It is related to.

The deposition apparatus according to claim 1, wherein the film forming material is an organic material.

In addition, the vapor deposition apparatus according to any one of claims 1 to 32 is used to form a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 on the substrate 4. It concerns the method.

Since the present invention is configured as described above, even if the deposition mask is not enlarged as the substrate is enlarged, the deposition mask can be widely used by relatively moving the substrate in a separated state even if the deposition mask is smaller than the substrate. Vapor deposition film with a deposition pattern can be deposited, and the structure can be simply and efficiently vapor-deposited by relative movement in the separated state, and the limiting opening can be deposited with the evaporation source even when the vapor deposition mask is in the separated state. By providing between the mask and the mask, it is possible to limit the scattering direction of the evaporated particles and prevent the vapor deposition particles from passing through the evaporation port at the adjacent or remote positions so as not to overlap. The vapor deposition mask is attached to a mask holder having a scattering restriction portion provided with a portion, and the vapor deposition mask is attached to at least one of the mask holder or the vapor deposition mask. By providing a temperature control mechanism that holds the temperature of the mask, this mask holder not only serves as a scattering restriction part, but also exhibits a temperature holding function that suppresses the incidence of radiant heat from the evaporation source and suppresses the temperature rise of the vapor deposition mask. The temperature of the vapor deposition mask can be kept constant, thereby preventing distortion of the vapor deposition mask due to heat, and the substrate and the vapor deposition mask can be moved relative to each other in a separated state, but highly accurate vapor deposition can be performed. It becomes a vapor deposition apparatus and a vapor deposition method.

Especially in the manufacture of organic EL devices, it is possible to cope with the increase in size of the substrate, the organic light emitting layer can be deposited with high accuracy, and the damage of the substrate, the deposition mask, and the deposited film due to the mask contact can be prevented. It becomes the vapor deposition apparatus and vapor deposition method for organic EL device manufacture which can implement | achieve vapor deposition of this.

Further, in the inventions according to

claims

2 and 3, the operation and effect of the present invention can be exhibited more satisfactorily, and the vapor deposition apparatus is further excellent in practicality.

Further, in the inventions according to

claims

4 and 5, since the vapor deposition mask is attached to the mask holder at the end on the substrate side farthest from the evaporation source, it is possible to further suppress the incidence of radiant heat from the evaporation source, The tension applied to the mask is stably maintained by the temperature holding function of the mask holder.

In the invention described in claim 6, since tension is applied in the relative movement direction of the substrate with respect to the vapor deposition mask, the vapor deposition mask does not bend, and the film formation error caused by the deflection is eliminated.

Further, in the invention according to claim 7, since a small evaporation mask divided into a plurality of sheets can be formed on a large substrate, the evaporation mask can be easily manufactured.

Further, in the invention according to claim 8, vapor deposition masks in which mask openings are individually set are arranged side by side so as to achieve uniformity in each vapor deposition region based on the film thickness distribution characteristics for each vaporization port. Or the vapor deposition mask can be individually replaced.

According to the ninth and tenth aspects of the present invention, the rib portion provided extending in the relative movement direction of the substrate can prevent the mask holder from being deformed by the tension of the deposition mask and can maintain the tension of the deposition mask. In addition, by providing a mask mounting support surface, it is possible to firmly support and join the vapor deposition mask to the mask holder.

In the invention described in claim 11, a temperature control mechanism can be easily provided in the vapor deposition mask or a mask holder which is a part for conducting heat of the vapor deposition mask, and the vapor deposition mask is maintained at a constant temperature. It can be easily realized that the thermal expansion of the vapor deposition mask can be suppressed and vapor deposition can be performed in a highly accurate film formation pattern.

In the inventions according to claims 12 to 19, the temperature holding function for holding the vapor deposition mask at a constant temperature is further enhanced, and for example, the temperature holding of the evaporation source side mask holder to which a large amount of evaporation particles adhere is maintained. Function can be enhanced.

That is, for example, among the temperature control units provided in a plurality of stages on the mask holder, the temperature source control unit on the evaporation source side absorbs heat from the evaporation source, and the substrate side (vapor deposition mask side) temperature control unit further heats it. The temperature of the vapor deposition mask can be kept constant by absorbing water, and the temperature holding function is further enhanced.

Furthermore, in the invention described in claim 14, for example, a temperature gradient is generated in the direction from the evaporation source to the mask side on the lower stage side, and a temperature gradient is generated in the direction from the vapor deposition mask to the evaporation source side on the upper stage side. In this case, even if high-temperature radiant heat from the evaporation source is incident on the lower stage of the mask holder, the temperature rise of the lower stage can be further suppressed, and on the upper stage, a temperature gradient is generated in the direction from the vapor deposition mask toward the evaporation source. Thus, even if high-temperature radiant heat from the evaporation source enters the deposition mask, the temperature rise of the deposition mask can be further suppressed.

In the invention described in claim 15, even if high-temperature radiant heat from the evaporation source is incident on the rib portion, the temperature rise of the rib portion is suppressed, and the thermal expansion of the vapor deposition mask attached to the end of the mask holder is suppressed. it can.

Further, in the invention described in claim 16, even if high-temperature radiant heat from the evaporation source is incident on the rib portion or the mask holder, the temperature distribution in the mask holder becomes uniform, so that the temperature of the mask holder is further increased. The thermal expansion of the vapor deposition mask attached to the end of the mask holder can be further suppressed.

In the invention according to claim 17, since the shape of the limiting opening of the mask holder is made smaller than the opening area on the substrate side, the evaporation area of the film forming material evaporated from the evaporation source is reduced. More particles can be captured on the evaporation source side of the restriction opening, so that the film forming material adhering to the substrate side of the restriction opening, that is, the evaporation mask can be reduced, and the vapor deposition mask replacement cycle can be reduced. In addition to being able to extend the time, it becomes easy to collect the deposited film forming material after the mask holder is replaced.

Further, in the invention of claim 19, the temperature of the vapor deposition mask itself is controlled efficiently, and for example, the temperature holding function is further improved by providing a temperature control mechanism for the mask holder. Since a medium path and a heat pipe that constitute a part of the temperature control mechanism can be provided by using a portion (gap) separated from the vapor deposition mask, the flexibility of the layout of the medium path and the heat pipe can be ensured. .

Further, in the invention described in claim 20, the opening width of the evaporation port portion of the evaporation source is narrowed to cause a gap between the substrate and the vapor deposition mask (the size of the gap also varies depending on the distance from the evaporation source). ) It is possible to further suppress the shadow of the film formation pattern (the amount of protrusion of the inclined portion on the side edge of the vapor deposition film), and increase the evaporation rate by increasing the opening length of the evaporation port in the relative movement direction. it can.

In particular, in the invention described in claim 21, by narrowing the opening width of the evaporation port portion, for example, in the case of sequentially depositing RGB, it is possible to cause a shadow to reach adjacent vapor deposition films (adjacent pixels). In addition, by narrowing the opening width of the evaporation port portion in this way, the gap between the substrate and the evaporation mask can be increased, and the mask mounting support surface between the aforementioned limiting openings can be widened, or the evaporation mask itself An even better vapor deposition apparatus can be provided, such as a temperature control mechanism.

In the invention described in claim 22, since a plurality of evaporation ports are arranged side by side as one evaporation source, it is possible to adjust and control the generation amount of the evaporation particles, the ejection pressure, etc. with one evaporation source. In particular, by providing a horizontally long diffusion part in the evaporation source and arranging a plurality of evaporation port parts in parallel therewith, the pressure can be made uniform, and the pressure can be made uniform between the plurality of evaporation port parts arranged in parallel. It will be.

Further, in the invention described in claim 23, an evaporation port portion forming projection is provided in the evaporation source, for example, projecting from the horizontally long diffusion portion (toward the substrate side), and the evaporation port is formed at the tip of each projection. By providing the structure, the radiant heat from the heating range other than the evaporation port part, that is, the high heat range of the evaporation source, can be caused by, for example, a heat blocking part such as a cooling member (functioning as a temperature control part provided in the evaporation source) Since it can interrupt | block, the temperature rise of a vapor deposition mask can be suppressed and the temperature of a vapor deposition mask can be kept constant.

Further, in the invention described in claim 24, the vapor deposition film having a film formation pattern determined by the horizontal arrangement of the mask openings of the vapor deposition mask is formed by relative movement of the substrate. In the relative movement direction, the long total opening length is set so as to increase in the lateral direction from the central portion of the limiting opening (for example, the position facing the evaporation port), so that the evaporation rate decreases as the distance in the lateral direction increases. However, the film thickness can be made uniform by correspondingly increasing the opening length.

According to a twenty-fifth aspect of the present invention, the formation pitch in the lateral direction of the mask openings is determined from the film formation pitch of the film formation pattern deposited on the substrate, the gap between the substrate and the evaporation mask, and the substrate and evaporation. Installed narrower by a difference corresponding to at least one of the distances to the source, and the opening dimension in the lateral direction of the mask opening than the pattern width of the film formation pattern is the gap, the distance, Since the opening width in the lateral direction of the evaporation port portion of the evaporation source is set wide by a difference corresponding to at least one of the sizes, the substrate and the vapor deposition mask are separated from each other, and a gap is formed between them. Even if there is, the position of the film formation pattern is not shifted and the width of the film formation pattern is not shifted, and the formation accuracy of the film formation pattern can be increased.

Further, in the invention described in claim 26, since it is connected to the vapor deposition apparatus via the connecting portion, for example, separation and reconnection with the temperature control mechanism can be easily performed when the mask holder is replaced.

Further, in the invention described in claim 27, by providing the cleaning device, the film forming material adhering to the mask holder or the vapor deposition mask can be cleaned in the vapor deposition device, and the mask holder and the vapor deposition mask can be reused. Easy to do.

Further, in the invention described in claim 28, since the material recovery mechanism is provided, the material can be recovered and reused. For example, as in the invention described in claim 17, the shape of the mask holder is changed to the evaporation source side. For example, the temperature control function of the temperature control unit on the evaporation source side is further increased, for example, as in the invention of claim 18, by increasing the size (increasing the evaporation source side end so as not to adhere to the inner surface of the restriction opening). As a result, the material adheres to the evaporation source side end of the mask holder, and the recovery becomes easier.

Further, in the invention of claim 29, since the second vapor deposition mask is provided, it is possible to form a film with the opening pattern of the second vapor deposition mask after suppressing the incidence of radiant heat from the evaporation source. More highly accurate vapor deposition can be performed while suppressing the temperature rise of the vapor deposition mask.

Further, in the invention of claim 30, it is a vapor deposition apparatus capable of realizing a second vapor deposition mask that can more reliably prevent shadows and perform high-precision vapor deposition.

Further, in the invention described in claim 31, a temperature increase of the vapor deposition mask is suppressed by a mask holder having a vapor deposition mask, a scattering restriction portion provided with a restriction opening contacting the vapor deposition mask, and a temperature control mechanism provided in the mask holder. Since the temperature can be kept constant, the second vapor deposition mask provided between the vapor deposition mask and the substrate can be formed of a material having a large linear expansion coefficient because it is more difficult to raise the temperature. As a result, it is possible to form a higher-definition mask opening, thereby providing a vapor deposition apparatus capable of performing vapor deposition with higher accuracy.

Also, in the invention of claim 32, it becomes an organic material vapor deposition apparatus and is more practical. Moreover, in the invention of Claim 33, it becomes the outstanding vapor deposition method which exhibits the said effect | action and effect.

It is the rough explanatory front view which cut the principal part of a present Example. It is the explanation front view which cut the principal part of a present Example. It is the explanation side view which cut the important section of this example. It is a description perspective view of the principal part of a present Example. It is a description exploded perspective view of a present Example. FIG. 5 is a cross-sectional view taken along line AA of FIG. 4 showing the temperature control mechanism of the present embodiment. FIG. 5 is a cross-sectional view taken along line BB of FIG. 4 showing the temperature control mechanism of the present embodiment. FIG. 5 is a sectional view taken along the line CC of FIG. 4 showing the temperature control mechanism of the present embodiment. FIG. 6 is a sectional view taken along the line DD of FIG. 4 showing the temperature control mechanism of the present embodiment. It is explanatory drawing which shows the temperature control mechanism provided also in the vapor deposition mask of the present Example. It is explanatory front sectional drawing which shows the temperature control mechanism provided also in the vapor deposition mask of the present Example. It is explanatory front view which shows another example of the temperature control mechanism provided in the vapor deposition mask of a present Example. It is an expansion explanatory front view of the principal part of a present Example. It is a description perspective view of the evaporation source of a present Example. It is an expansion explanatory top view of the vapor deposition mask of a present Example. It is an expansion explanatory top view which shows another example of the vapor deposition mask of a present Example. It is explanatory drawing which can suppress the shadow of a vapor deposition film by narrowing the opening width | variety of the evaporation port part of the evaporation source of a present Example, and can take a gap large by this. It is explanatory drawing which shows that the arrangement pitch of the horizontal direction of the mask opening part of the vapor deposition mask of a present Example is made a little narrower than a film-forming pitch. It is explanatory drawing which shows that the opening dimension of the horizontal direction of the mask opening part of the vapor deposition mask of a present Example is made a little wider than the pattern width of a film-forming pattern. It is explanatory drawing which shows that the vapor deposition rate of a present Example becomes so low that it deviates from a center part to a horizontal direction. It is a graph which shows that the film thickness distribution of a present Example becomes distribution based on a cosine law, and the correction | amendment setting of the formation length of a mask opening part is lengthened so that it leaves | separates from a center part to a horizontal direction according to this. It is explanatory drawing which shows that the mask attachment support surface of the rib part between the opening parts for a restriction | limiting of the mask holder of a present Example can be taken widely. It is the rough explanatory front view which cut the principal part of the 2nd example (example which provided the 2nd vapor deposition mask).

Embodiments of the present invention that are considered suitable will be briefly described with reference to the drawings, illustrating the operation of the present invention.

In FIG. 1, the film-forming material evaporated from the evaporation source 1 passes through the restriction opening 5 of the mask holder 6 configured as a scattering restriction part, and onto the substrate 4 through the mask opening 3 of the vapor deposition mask 2. After deposition, a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4.

At this time, the substrate 4 and the vapor deposition mask 2 are arranged in a separated state, and the substrate 4 is configured to be movable relative to the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state. Thus, by relatively moving the substrate 4, a deposition film having a deposition pattern defined by the deposition mask 2 is formed on the substrate 4 in a wider range than the deposition mask 2 itself.

Further, a mask holder 6 having a scattering restriction portion provided with the restriction opening 5 for restricting the scattering direction of the evaporated particles of the film forming material evaporated from the evaporation source 1 between the vapor deposition mask 2 and the evaporation source 1. To prevent the deposition patterns from overlapping even if the vapor deposition mask 2 and the substrate 4 are in a separated state without allowing the vaporized particles from the vaporization openings 8 adjacent or separated by the restriction opening 5 to pass therethrough. is doing.

Furthermore, the vapor deposition mask 2 is joined and attached to the mask holder 6 that constitutes the scattering limiting portion, and a temperature control mechanism 9 that holds the temperature of the vapor deposition mask 2 on at least one of the mask holder 6 or the vapor deposition mask 2 is provided. Since it is provided, the incidence of heat from the evaporation source 1 is suppressed, the temperature rise of the mask holder 6 and the vapor deposition mask 2 is suppressed, and the vapor deposition mask 2 is in contact with the mask holder 6 even when it is separated from the substrate 4. As a result, the heat of the vapor deposition mask 2 escapes to the mask holder 6, and the temperature control mechanism 9 is provided on the mask holder 6 or the vapor deposition mask 2, so that the vapor deposition mask 2 is kept at a constant temperature. Function is improved.

Therefore, the mask holder 6 having the scattering restriction portion also functions as a temperature holding function at the same time as the function of restricting the scattering direction of the evaporated particles, can suppress the temperature rise of the vapor deposition mask 2, and keep the vapor deposition mask 2 at a constant temperature. This also prevents distortion of the vapor deposition mask 2 due to heat.

Accordingly, the substrate 4 is moved relative to the vapor deposition mask 2, the mask holder 6 provided with the vapor deposition mask 2 and the evaporation source 1 while keeping the separated state from the vapor deposition mask 2 in this relative movement direction. The vapor deposition film of the above-mentioned film formation pattern by the vapor deposition mask 2 is continued to form a vapor deposition film in a wide range even with the vapor deposition mask 2 smaller than the substrate 4, and the film formation pattern by incidence from the evaporation port 8 at the adjacent or remote position. Overlapping and distortion due to heat are sufficiently suppressed, and a vapor deposition apparatus capable of performing highly accurate vapor deposition is obtained.

Specific embodiments of the present invention will be described with reference to the drawings.

In this embodiment, a film forming material (for example, an organic material for manufacturing an organic EL device) evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening 3 of the vapor deposition mask 2, and this vapor deposition is performed. In a vapor deposition apparatus configured such that a vapor deposition film having a film formation pattern defined by a mask 2 is formed on a substrate 4, the substrate 4 and the vapor deposition mask 2 are disposed in a separated state, and the substrate 4 is disposed on the vapor deposition mask. 2. The mask holder 6 and the evaporation source 1 configured as the scattering restriction portion provided with the restriction opening 5 are configured to be relatively movable while maintaining the separated state from the vapor deposition mask 2, and by this relative movement, A vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4 in a wider range than the vapor deposition mask 2.

Further, a restriction opening 5 is provided between the vapor deposition mask 2 and the evaporation source 1 to limit the scattering direction of the evaporated particles of the film forming material evaporated from the evaporation ports 8 of the evaporation sources 1 arranged in parallel. A mask holder 6 that constitutes a scattering restriction portion is provided, and the evaporation particles having a large scattering angle are restricted so that the evaporation particles from the evaporation port portions 8 at adjacent or remote positions are not allowed to pass.

That is, the vapor deposition is performed by the vaporized particles from the plurality of vaporization openings 8 so that the vaporization can be performed on the large-area substrate 4 while securing the vaporization rate, and the vaporization of the adjacent or separated positions by the restriction openings 5 is performed. Even if the vapor deposition mask 2 and the substrate 4 are separated from each other, the overlapping of the film formation patterns is prevented.

Further, the vapor deposition mask 2 is joined and attached to the master holder 6 that constitutes the scattering limiting portion, and the temperature is controlled so that the temperature of the vapor deposition mask 2 is held in at least one of the mask holder 6 or the vapor deposition mask 2. A control unit 9 is provided so that heat can be conducted to the mask holder 6 by being bonded to the mask holder 6 even when the vapor deposition mask 2 is separated from the substrate 4. The temperature holding function is also performed at the same time as the scattering direction limiting function, so that the temperature rise of the vapor deposition mask 2 is suppressed and the temperature of the vapor deposition mask 2 is kept constant.

Further, since the vapor deposition mask 2 releases heat as a structure bonded to the mask holder 6 in this way, even if the vapor deposition mask 2 is vapor-deposited in a separated state without being in contact with the substrate 4, the vapor deposition mask 2 is used. 2 is sufficiently suppressed, and the temperature holding function by the temperature control mechanism 9 provided directly on the master holder 6 or the vapor deposition mask 2 is further enhanced, so that the vapor deposition mask 2 can be controlled at a constant temperature. The vapor deposition mask 2 is less likely to be distorted by heat, and the deposition pattern accuracy is maintained, so that deposition with high positional accuracy can be performed.

Accordingly, the substrate 4 is moved relative to the mask holder 6 (mask unit) provided with the vapor deposition mask 2 and the evaporation source 1 while maintaining the separated state from the vapor deposition mask 2, and the vapor deposition mask is moved in the relative movement direction. 2. An excellent vapor deposition apparatus capable of forming a vapor deposition film in a wide range even with the vapor deposition mask 2 smaller than the substrate 4 by continuing the vapor deposition film of the film formation pattern 2 and performing high-precision vapor deposition with high positional accuracy of the film formation pattern. It becomes.

More specifically, the evaporation source 1 in which the film forming material (for example, an organic material for manufacturing an organic EL device) is housed in a vapor deposition chamber 7 (for example, in the vacuum chamber 7) in a reduced pressure atmosphere. And the vapor deposition mask 2 provided with the mask opening 3 through which the vaporized particles of the film forming material evaporating from a plurality of the evaporation ports 8 arranged side by side of the evaporation source 1 pass. A vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4 by depositing vapor particles scattered from the plurality of vaporization openings 8 through the mask opening 3 on the substrate 4 aligned with the state. Scattering provided with a restriction opening 5 between the substrate 4 and the evaporation source 1 so as to prevent evaporation particles from the evaporation port 8 located adjacent to or away from the evaporation source 1 from passing therethrough. Configure the restriction A mask holder 6 is disposed, and the vapor deposition mask 2 disposed in a separated state from the substrate 4 is attached to the mask holder 6, and heat from the evaporation source 1 is absorbed into the mask holder 6. The temperature suppression mechanism 9 that maintains the temperature of 2 is provided.

In other words, in this embodiment, since the substrate 4 and the vapor deposition mask 2 are relatively moved in a separated state in this manner for vapor deposition, a plurality of evaporation port portions 8 are provided in the lateral direction perpendicular to the relative movement direction of the substrate 4. The overlapping of the film formation patterns due to incidence from the adjacent or distant evaporation port portions 8 of the evaporation port portions 8 is limited by each limiting opening 5 (attached and captured), and When the substrate 4 and the vapor deposition mask 2 are vapor-deposited in a separated state and a vapor deposition film having a film formation pattern by the vapor deposition mask 2 is formed on the substrate 4, a shadow SH is generated as an inclined portion on both sides of the vapor deposition film. SH varies according to various conditions such as a gap G between the substrate 4 and the vapor deposition mask 2 and a distance TS from the evaporation port 8. In this embodiment, each evaporation port 8 is narrowed by reducing the opening width φx to suppress this shadow SH (the amount of protrusion), and the evaporation port 8 is lengthened in the relative movement direction to increase the evaporation rate. Yes.

Specifically, as shown in FIG. 17, the shadow SH which is an inclined portion at both end portions of the vapor deposition film is G for the gap between the substrate 4 and the vapor deposition mask 2, and the lateral opening width of the evaporation port 8. Is φx, and the distance between the evaporation port 8 and the vapor deposition mask 2 is TS, it is expressed by the following formula, and the shading SH is set so as not to reach the interval PP between the adjacent vapor deposition films. The gap G can be set large by setting the opening width φx small.

In this embodiment, for example, in the manufacture of an organic EL display device, RGB that are light emitting layers are sequentially deposited, but in this case, film formation is performed using the deposition mask 2 in each of RGB. For example, when the pixel R is vapor-deposited, the pixel GB is hidden by the vapor deposition mask 2, but when the substrate 4 and the vapor deposition mask 2 are separated as in the present embodiment, the both ends of the vapor deposition film are inclined. The shadow SH of the portion is generated, but it is necessary to set so that the shadow SH does not reach the adjacent pixels (SH <PP).

This shadow SH changes according to the conditions of the gap G between the substrate 4 and the vapor deposition mask 2, the distance TS between the evaporation port 8 and the vapor deposition mask 2, and the opening width φx of the evaporation port 8. As shown in FIG. 17, the shadow SH is expressed by the above equation, and the gap G can be set large by setting the opening width φx of the evaporation port portion 8 small so as not to reach the interval PP between the adjacent vapor deposition films. I am doing so.

Specifically, when the shadow SH is set to 0.03 mm or less, TS is set to 100 to 300 mm, and φx is set to 0.5 to 3 mm, the gap G can be secured to 1 mm or more.

For example, if TS is 100 mm and φx is 3 mm, G is 1 mm, and if TS is 100 mm and φx is reduced to 0.6 mm, G can be 5 mm. Further, when TS is 300 mm, φx is 3 mm, and G is 1 mm, SH can be reduced to 0.01 mm, and a higher-definition film forming pattern may be supported.

Thus, by using the gap G of 1 mm or more between the substrate 4 and the vapor deposition mask 2, it becomes possible to provide the medium path 12 and the heat pipe 22 in the vapor deposition mask 2 itself as will be described later. As described above, the mask mounting support surface 23 can be widely formed on the rib portion 24 of the mask frame 6, and the second vapor deposition mask 10 described later can be provided.

Further, in this embodiment, if the distance between the evaporation source 1 and the substrate 4 is increased, the size of the apparatus is increased, the material efficiency is deteriorated, and the vapor deposition rate is lowered. The openings 8 are arranged side by side, the evaporation masks 2 are opposed to each other, the evaporation range in one evaporation opening 8 is narrowed, the incident angle is not increased, and the evaporation by the plurality of evaporation openings 8 is performed. Even if it exists, it is set as the structure which prevents the overlap of the film-forming pattern by the opening part 5 for a restriction | limiting, and does not need to make the distance with the evaporation source 1 so much.

In addition, since the incident angle does not increase in this way, the film thickness is prevented from decreasing due to the lower deposition rate as the distance from the position facing the evaporation port portion 8 increases. In addition, when the incident angle is large, the amount of change in the deposition position due to the change in the film formation pattern increases with respect to the change in the gap G between the substrate 4 and the deposition mask 2, that is, the flatness of the substrate 4 and the deposition mask 2. If the flatness error is caused by thermal distortion, the gap G fluctuates and the error increases. Therefore, the amount of change due to this deposition position error can be suppressed by preventing the incident angle from increasing. High-precision deposition is possible.

Further, in the present embodiment, as described above, with respect to the shadow SH, each evaporation port 8 is made into a narrow slit-shaped opening to reduce the lateral opening width φx and reach the adjacent vapor deposition film (adjacent pixel). A moderate amount of shading SH is prevented.

In the present embodiment, as described above, the narrow evaporation ports 8 are arranged in parallel in the horizontal direction, and the vapor deposition mask 2 provided with the corresponding mask openings 3 is disposed opposite to the evaporation ports 8. The restriction opening 5 is provided between the vapor deposition mask 2 and the evaporation source 1, and only the evaporation particles from the evaporation opening 8 facing the evaporation mask 8 pass through the evaporation opening 8 adjacent to or away from the evaporation opening 8. In the present embodiment, one or a plurality of evaporation port portions 8 are provided for each evaporation port portion 8 in this way. Each of the limiting openings 5 is associated with each other, and the vapor deposition mask 2 is attached so as to correspond to each of the limiting openings 5.

More specifically, in this embodiment, a mask holder 6 (mask unit) provided with an evaporation source 1 and a vapor deposition mask 2 and a substrate 4 are disposed in a vacuum chamber 7, and the chamber 7 is driven by a vacuum pump 13. The inside is decompressed, the alignment mechanism 14 aligns the substrate 4 and the vapor deposition mask 2 attached to the mask holder 6, and the substrate 4 is vapor-deposited by moving relative to the vapor deposition mask 2 (horizontal conveyance). It is said.

The alignment mechanism 14 that aligns the substrate 4 and the vapor deposition mask 2 captures, for example, the alignment marks provided on the substrate 4 and the vapor deposition mask 2 with a camera, makes an image determination, and moves the alignment mark X with the movement adjustment mechanism so that they match. , Y, θ directions are finely adjusted and aligned, and even if the substrate is large in size, the substrate adsorption portion that adsorbs the central portion on a flat surface is moved so that the substrate 4 is not distorted. The substrate 4 is provided with a relative movement mechanism 15 for horizontally conveying the substrate 4. Of course, either one may be moved, or the vertical relationship may be reversed or the vertical relationship may be reversed.

Therefore, in this embodiment, an in-line system that can be easily transported even by the large substrate 4 is used, and a large deposition mask 2 that is substantially coincident with the substrate 4 in the lateral direction but narrow in the moving direction is large. After the substrate 4 is aligned in the separated state, the substrate 4 is horizontally transported by the transport mechanism 15 in this separated state and deposited.

Therefore, even if the substrate size is large, such as G6 and G8, the deposition mask 2 does not have to be large, so that the production is not difficult, and the substrate 4 does not come into contact. The problem of damage to the mask 2 or the deposited film hardly occurs, and a high-quality film can be obtained.

In this embodiment, a plurality of evaporation sources 1 may be arranged side by side and the respective evaporation port portions 8 may be arranged in parallel. However, a configuration in which a plurality of evaporation port portions 8 are arranged in parallel on one horizontally long evaporation source 1 is adopted. A plurality of evaporation ports 8 arranged in the lateral direction are provided in one evaporation source 1, and are generated from the evaporation particle generation unit 26 that heats the film forming material and from the evaporation particle generation unit 26. The evaporation source 1 is constituted by a horizontally long diffusion portion 27 that diffuses the vaporized particles and makes the pressure uniform, and a plurality of the evaporation port portions 8 are formed side by side in the horizontally long diffusion portion 27. More specifically, for example, a film forming material is stored in an evaporative particle generation unit 26 (crucible 26) that can be exchanged by an automatic crucible exchanging mechanism 18, and the vaporized particles heated and evaporated in the crucible 26 are temporarily stopped to make the pressure uniform. The laterally elongated laterally extending portion 27 is provided, and a large number of slit-like openings narrow in the lateral direction as described above in the lateral direction that is long in the relative movement direction at the top of the laterally elongated portion 27 along the lateral direction. A large number of the evaporation ports 8 are arranged in parallel.

A plurality of the restriction openings 5 are also arranged in the lateral direction in which a plurality of the evaporation ports 8 are arranged side by side, and the evaporation particles evaporating from the respective evaporation ports 8 are limited to the opposed restriction openings 5 only. The vapor deposition film of the film formation pattern is formed on the substrate 4 through the mask opening 3 of the vapor deposition mask 2 that passes through the limiting aperture 5 and faces the restriction opening 5, and is adjacent to or separated from the substrate 4 The evaporation particles from the evaporation port 8 are configured to be restricted by the restriction opening 5 so that the evaporation direction of the evaporation particles is restricted by being attached to and captured by the mask holder 6 configured as the scattering restriction. Yes.

Therefore, by providing the horizontally long diffusion portion 27 in the evaporation source 1 and arranging the plurality of vapor deposition ports 8 in parallel therewith, the pressure can be made uniform and the film thickness can be made more uniform.

More specifically, one evaporating port 8 may be disposed opposite to one restricting opening 5 so as to be disposed at the center position (below), or one restricting opening 5 may be disposed. On the other hand, the two evaporation ports 8 may be arranged to face each other with the center of the restriction opening 5 as a boundary. However, in this embodiment, each of the evaporation ports 8 arranged side by side as described above. The restricting openings 5 are arranged side by side so as to correspond to each other, and the evaporated particles from any of the adjacent right and left evaporating openings 8 pass through the restricting openings 5 respectively. However, the adjacent restriction opening 5 cannot pass and is attached and captured. That is, by setting the side-by-side spacing, opening diameter, and opening depth of the restriction openings 5, the evaporated particles from one evaporation port 8 pass only through the opposed restriction openings 5 and are adjacent to the left and right. Evaporated particles from the matching evaporation port portion 8 are configured not to pass through the restricting opening 5, thereby reliably preventing the overlapping of the film formation patterns.

Further, as shown in FIGS. 15 and 16, the mask openings 3 of the vapor deposition mask 2 of the present embodiment are arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrate 4, and each of these mask openings. The portion 3 is formed in a slit shape that is long in the relative movement direction or a plurality of openings are arranged in parallel in the relative movement direction, and the total opening length in the relative movement direction is longer than the opening length in the lateral direction.

In other words, the mask openings 3 in each row of the vapor deposition mask 2 may be slit-like openings that are long in the relative movement direction. In order to increase the rigidity of the vapor deposition mask 2, the mask openings 3 are slits that are long in the relative movement direction. Small openings such as holes or small holes may be scattered in this direction to ensure a wide total opening length (total opening area).

As shown in FIG. 18, the formation pitch of the vapor deposition film is set to a lateral formation pitch perpendicular to the relative movement direction of the substrate 4 of the mask opening 3 of the vapor deposition mask 2 that determines the film deposition pattern to be vapor deposited on the substrate 4. The pitch is set narrower than the pattern pitch by a difference corresponding to the size of the gap G between the substrate 4 and the vapor deposition mask 2 and the distance TS between the evaporation source 1 and the vapor deposition mask 2.

Specifically, as shown in FIG. 18, the distance MPx from the mask position facing the evaporation source opening center to the mask opening center is from the position of the substrate 4 facing the evaporation source opening center to the film formation pattern center. The distance Px is reduced by α / (1 + α) (in this case, α = TS / G).

Therefore, for example, if TS is 100 mm and G is 1 mm, α is 100 and α / (1 + α) is about 0.99. Therefore, for example, if Px is 10 mm, MPx is 9.9 mm, and MPx is smaller than Px.

That is, since the substrate 4 and the vapor deposition mask 2 are separated from each other, the vapor deposition mask 2 can be changed depending on the size of the gap G between the substrate 4 and the vapor deposition mask 2 and the distance TS between the evaporation source 1 and the vapor deposition mask 2. Although the position of the vapor deposition film deposited on the substrate 4 through the mask opening 3 is shifted in the horizontal direction, the opening pitch of the vapor deposition mask 2 should be set to be narrower than the film formation pattern pitch in consideration of this deviation amount. Thus, it is possible to form a vapor deposition film with high film formation pattern position accuracy.

Similarly, as shown in FIG. 19, when the opening width φx of the evaporation port 8 is larger than the mask opening width, the evaporation mask opening width Mx is larger than the gap G between the substrate 4 and the evaporation mask 2 and the evaporation source 1. And the distance corresponding to the size of the distance TS to the vapor deposition mask 2 increases. Specifically, the mask opening width Mx is represented by (φx + αP / (1 + α)) (in this case, α = TS / G).

For example, when the deposition pattern width P is 0.1 mm, TS is 100 mm, and φx is 1 mm, the mask opening width Mx is about 0.126 mm when G is 3 mm, and about 0.143 mm when G is 5 mm. Become wider.

Furthermore, in this embodiment, as shown in FIGS. 15 and 16, the opening slit of the vapor deposition mask 2 is set so as to be longer as it is further away from the central portion in the lateral direction, and the vapor deposition rate is lower as it is farther from the central portion. However, the film thickness distribution is set to be uniform.

For example, as shown in FIGS. 20 and 21, if the scattering angle of the evaporated particles at a position x in the lateral direction (X-axis direction) orthogonal to the relative movement direction of the substrate 1 is θ, the cosine law is at the position x. An approximate distribution obtained by multiplying (cos θ) by a power coefficient n, and taking into account the film thickness distribution in the relative movement direction (Y-axis direction) of the substrate 1, the formation length of the mask opening 3 of the vapor deposition mask 2 is the central portion. It is set to change symmetrically for a long time at the border.

Specifically, the dimensions of the evaporation source port are, for example, an evaporation source opening width φx of 1 mm, an evaporation source slit length φy of 60 mm, and a lateral film thickness distribution perpendicular to the relative movement direction of the substrate 4 is 20 of cos θ. If the distribution approximates to the power, the film thickness distribution shown in FIG. 21 is obtained. As the incident angle of the evaporated particles on the vapor deposition mask 2 increases, the influence of the above-described error increases. Therefore, when the film is used for film formation up to a position where the film thickness is as thin as 80% of the center, 60 mm of −30 to +30 is 1 This is an effective film forming range for forming a film with a nozzle. Assuming that the formation length in the relative movement direction of the substrate 4 at the mask position facing the evaporation source opening center is 100 mm, the evaporation mask opening length at −30 and +30 positions that are both ends of the effective film formation range is about 146 mm. As shown in FIG. 21, as the distance from the center to both ends increases, the opening length becomes symmetrical.

Further, the limiting opening 5 of the present embodiment has a shape in which the opening area on the evaporation port 8 side is small and widens toward the vapor deposition mask 2 side, in other words, as an inverted truncated pyramid having a small opening area on the evaporation port 8 side. The evaporation particles adhere to the end surface of the restriction opening 5 on the evaporation port 8 side (the end face of the mask holder 6) and adhere to the inner surface of the restriction opening 5 as much as possible. The evaporated particles (film forming material) can be easily peeled and collected.

Further, if the restricting openings 5 and the evaporation port 8 are too close to each other, the adhering evaporated particles may hinder evaporation, and if they are separated from each other, evaporation from the adjacent evaporation ports 8 may occur. The amount of particles adhering to the inner surface of the restriction opening 5 increases, and recovery becomes difficult as described above. Therefore, as shown in FIG. 13, the restriction opening 5 and the evaporation port 8 are separated from each other to enhance the restriction function, and the evaporated particles from the adjacent evaporation port 8 enter the inner surface of the restriction opening 5. Alternatively, a partition 21 may be provided between each evaporation port 8 and each restriction opening 5 so as to adhere to the end surface of the mask holder 6.

In the present embodiment, the vapor deposition mask 2 is attached to the mask holder 6 constituting the scattering restriction portion provided with the restriction opening 5 and at least one of the scattering restriction portion 6 or the vapor deposition mask 2 is provided. Is provided with a temperature control mechanism 9 for maintaining the temperature of the vapor deposition mask 2, and the mask holder 6 not only serves as a scattering restricting portion but also suppresses the incidence of heat from the evaporation source 1 and conducts the heat of the vapor deposition mask 2. Furthermore, the temperature holding function of absorbing heat can be exhibited to keep the temperature of the vapor deposition mask 2 constant, the distortion of the vapor deposition mask 2 can be prevented, and the substrate 4 and the vapor deposition mask 2 can be separated from each other. Although it is a structure moved relatively, it is comprised so that highly accurate vapor deposition can be performed.

That is, the incidence of heat from the evaporation source 1 is suppressed and the temperature rise of the mask holder 6 and the vapor deposition mask 2 is suppressed, and the vapor deposition mask 2 is in contact with the mask holder 6 even when it is separated from the substrate 4. Therefore, the heat of the vapor deposition mask 2 is conducted to the mask holder 6 and the temperature control mechanism 9 is provided in the mask holder 6 or the vapor deposition mask 2, so that the temperature of the vapor deposition mask 2 is maintained at a constant temperature. It is configured to improve functionality.

Therefore, the mask holder 6 constituting the scattering restriction portion serves not only the function of restricting the scattering direction of the evaporated particles but also the temperature holding function, and can suppress the temperature rise of the vapor deposition mask 2 and keep the vapor deposition mask 2 at a constant temperature. Further, distortion of the vapor deposition mask 2 due to heat hardly occurs, and a vapor deposition film with high positional accuracy of the film formation pattern can be deposited.

Specifically, in this embodiment, both ends of the block-shaped base portion in which the restriction openings 5 having the above-described shape are arranged at intervals are formed on a flat surface, and the openings of the restriction openings 5 are formed. The mask holder 6 is formed in a shape having a flat surface at the periphery of the end, the deposition mask 2 is attached to the flat surface at the end on the substrate 4 side, and the flat surface at the end on the opposite evaporation source 1 side is evaporated. It is the attachment surface to which particles adhere. An independent medium is circulated above and below the block-shaped base portion of the mask holder 6 and the temperature is controlled by exchanging the medium, and the heat pipe 22 is provided around the restriction opening 5 and the restriction opening, respectively. The temperature control mechanism 9 is provided in the mask holder 6 so as to absorb the heat and suppress the temperature rise so as to keep the temperature of the vapor deposition mask 2 constant.

More specifically, the configuration in which the vapor deposition mask 2 is brought into contact with the mask holder 6 will be described first. In this embodiment, the mask holder 6 is used as a mask frame so as to cover the restriction opening 5. As described above, the flat surface at the end of the mask holder 6 on the substrate 4 side, that is, the flat surface between the limiting opening 5 of the scattering restricting portion 6 and the peripheral end of the surrounding substrate 4 side is used as a mask mounting support surface. 23 is formed, and the peripheral portion of the vapor deposition mask 2 is supported and joined to the mask mounting support surface 23. Further, the mask opening 3 is formed so that the flatness of the vapor deposition mask 2 is increased and the heat distortion does not occur. The structure is such that tension is applied in the direction of relative movement, which is the length direction, and the vapor deposition mask 2 is superposed on the mask mounting support surface 23 and fixed by tension welding or the like.

In this embodiment, as shown in FIG. 22, a sufficiently wide flat surface is formed around the end surface of the mask holder 6 to provide the mask mounting support surface 23, and the space between the limiting openings 5 is also a flat surface. And a mask mounting support surface 23 is also provided between the restricting openings 5. The interval (arrangement pitch) between the mask openings 3 of the vapor deposition mask 2 has a vapor deposition film interval (a vapor deposition film constituting each pixel and an interval between them) of each color of the RGB pixels. Since there is a certain amount of allowance between the adjacent mask openings 3 at the end portions of the opposing vapor deposition mask 2, this allowance interval is also provided between the restricting openings 5 located between the mask openings 3. A rib portion 24, which will be described later, is provided, and the mask mounting support surface 23 is formed between the limiting openings 5 with the tip end surface being a flat surface.

More specifically, the mask holder 6 is configured to have a rigidity higher than the tension by applying the tension in the relative movement direction of the substrate 4 and stretching the vapor deposition mask 2 as described above. The ribs 24 for supporting the vapor deposition mask 2 with the relative movement direction of the substrate 4 as the length direction are provided between the restriction openings 5 to increase the rigidity in this direction, and between the restriction openings 5. The mask mounting support surface 23 for supporting and joining the vapor deposition mask 2 is also provided on the front end surface of the rib portion 24 on the substrate 4 side.

That is, in this embodiment, the mask holder 6 is provided with a rib portion 24 extending in the relative movement direction of the substrate 4, and the rib portion 24 has a mask mounting support surface 23 attached in contact with the vapor deposition mask 2. Thus, the temperature holding function of the vapor deposition mask 2 is enhanced. The mask mounting support surface 23 can be widely secured because the substrate 4 and the vapor deposition mask 2 are separated from each other.

For example, as shown in FIG. 22, the mask mounting support surface 23 in the configuration in which the substrate 4 and the vapor deposition mask 2 are in close contact with each other is 2P + 3PP using the vapor deposition film interval PP and the vapor deposition pattern width P for RGB pixel vapor deposition. expressed. In this embodiment, as shown in FIG. 22, by having a gap G, the position of the extreme end of the vapor deposition pattern and the mask opening 3 of the vapor deposition mask 2 when viewed from the center of the substrate 4 facing the evaporation source 1. A difference A from the extreme end position occurs. A is represented by G (Px + P / 2−φx / 2) / (TS + G), and the mask mounting support surface 23 is 2A wider than the case where the substrate 4 and the vapor deposition mask 2 are in close contact with each other.

More specifically, for example, when the vapor deposition pattern width P is 0.1 mm and the vapor deposition film interval PP is 0.05 mm, the mask mounting support surface 23 when the substrate 4 and the vapor deposition mask 2 are in close contact is 0. 35 mm. However, in the case where the substrate 4 and the vapor deposition mask 2 are separated from each other in this embodiment, for example, when TS is 200 mm, φx is 1 mm, and Px is 30 mm, the mask mounting support surface 23 is about 0.64 mm when G is 1 mm. When G is 5 mm, the thickness is about 1.79 mm, and a sufficient area for spot welding can be secured by polymerizing the vapor deposition mask 2.

Therefore, the mask holder 6 can be stretched by applying a sufficient tension to the vapor deposition mask 2 by increasing the rigidity as a mask frame.

That is, as described above, the mask mounting support surface 23 is provided, and the vapor deposition mask 2 is superposed and stretched thereon. In particular, when tension is applied and stretched in this way, the attached strength (polymerization by the bearing joining) (Fixed strength) is strong and stable, and extremely practical.

Further, the vapor deposition mask 2 of the present embodiment is divided into a plurality of pieces in the lateral direction orthogonal to the relative movement direction of the substrate 4, and the divided vapor deposition mask 2 is juxtaposed in the lateral direction on the mask holder 6. It is good also as a structure attached to. In this case, the vapor deposition masks 2 are arranged side by side so that the end portions are abutted with each other, but the vaporized particles do not pass through welding on the mask mounting support surface 23 at the front end surface of the rib portion 24 of the mask holder 6. And the heat of the vapor deposition mask 2 is conducted.

Accordingly, even a small vapor deposition mask 2 can cope with an increase in size, and for example, the mask openings 3 are individually arranged so that the film thickness is uniform for each region based on the film thickness distribution characteristics for each evaporation port 8. The vapor deposition masks 2 set in the above can be arranged side by side or the vapor deposition masks 2 can be individually replaced.

Next, the temperature control mechanism 9 will be further described. In this embodiment, the vapor deposition mask 2 is shielded by the mask holder 6 that constitutes the scattering limiting portion, and the heat to the vapor deposition mask 2 is in contact with the mask. Conductive to the holder 6, and heat is absorbed by the temperature control mechanism 9 including the medium path 12 and the heat pipe 22 in the mask holder 6, so that the vapor deposition mask 2 and the substrate 4 are separated from each other. However, the temperature rise of the vapor deposition mask 2 can be sufficiently suppressed, the temperature of the vapor deposition mask 2 can be kept constant, distortion due to heat hardly occurs, and vapor deposition with high positional accuracy of the film formation pattern can be performed.

As described above, the temperature control mechanism 9 includes the medium path 12 or the heat pipe 22 through which the medium is circulated in the mask holder 6 around the restriction opening 5 or between the restriction openings 5. A plurality of stages are provided in the opposing direction of the substrate 4 and the evaporation source 1. That is, for example, a heat exchanging portion 20 (20A, 20B, 20D) for removing heat from the medium flowing through the medium path 12 provided in the mask holder 6 and controlling the temperature is provided, and the medium flowing through the mask holder 6 evaporates. The heat from the source 1 is absorbed and the temperature is controlled by removing heat from the medium at the heat exchanging unit 20 so that the temperature of the deposition mask 2 is controlled to be constant. Provided.

More specifically, in this embodiment, the mask holder 6 is provided with the evaporation source 1 side temperature control unit 9A and the substrate 4 side temperature control unit 9B, and each of the

temperature control units

9A and 9B is independently provided. The medium path 12 (12A, 12B) through which the medium is circulated or the independent heat pipes 22 are provided in the mask holder 6, specifically, in the annular part 6A and the rib part 24 shown in FIG. Further, the substrate 4 side temperature control unit 9B is configured to determine the medium flow rate or the contact area with the medium in the medium path 12A of the evaporation source 1 side temperature control unit 9A, or the number of the heat pipes 22 or the sectional area of the heat pipes 22 The temperature control function of the evaporation source 1 side temperature control unit 9A is enhanced by increasing the temperature from the medium path 12B.

That is, of the

temperature control units

9A and 9B provided in a plurality of stages on the mask holder 6, the temperature control unit 9A on the evaporation source 1 side absorbs heat from the evaporation source, and the substrate 4 side (deposition mask 2 side) The temperature control unit 9B can further absorb heat to keep the temperature of the vapor deposition mask 2 constant, further enhancing the temperature holding function.

Further, by making the mask holder 6 in the shape as described above, that is, in a shape in which the capacity between the limiting openings 5 is larger toward the evaporation source 1 side, the evaporation source 1 side than the temperature control unit 9B on the substrate 4 side. The medium contact area of the medium path 12A of the temperature control section 9A is increased to enhance the heat absorption capability, and the evaporated particles are attached on the evaporation source 1 side and close to the evaporation source 1 (the radiant heat is large). A temperature at which the evaporation source 1 side absorbs heat sufficiently, and the temperature control unit 9B on the substrate 4 side further absorbs heat to control the temperature so that the temperature of the vapor deposition mask 2 is kept constant. The holding function is improved.

In the case of the water cooling type, the temperature control mechanism 9 (9A, 9B) is configured such that the medium path 12 (12A, 12B) through which the cooling water is circulated is passed through the mask holder 6 so that the heat exchange unit 20 (20A, 20B), and the end of the heat pipe 22 may be cooled in the same manner. However, in this embodiment, the temperature control unit 9A on the evaporation source 1 side is used. Has given both sides.

As shown in FIGS. 1 and 7 in particular, the medium path 12 includes a medium inflow path 12A1 for introducing cooling water into the medium path 12A of the evaporation source 1 side temperature control unit 9A in the case of the water cooling type. The medium outflow path 12A2 for discharging the cooling water from the medium path 12A is formed in two stages in the medium path 12A. The medium inflow path 12A1 and the medium outflow path 12A2 are controlled by the evaporation source 1 side temperature control. Similarly, the medium inflow path 12B1 and the medium outflow path 12B2 of the medium path 12B of the substrate 4 side temperature controlled section 9B are connected to the heat exchanging section 20A of the section 9A through the connecting section 25A. It is formed in steps and is connected to the heat exchanging part 20B of the substrate 4 side temperature controlled part 9B via a connecting part 25B.

For example, in the case of a water-cooled type, cooling water controlled to a constant temperature from each heat exchange section 20A, 20B is caused to flow from each medium inflow path 12A1, 12B1 to each

medium path

12A, 12B of the mask holder 6, The cooling water whose temperature has been raised by the radiant heat from the evaporation source 1 in the

medium paths

12A and 12B is discharged from the medium outflow paths 12A2 and 12B2, and is circulated again to the heat exchanging sections 20A and 20B. It has a temperature holding function to control and hold the vapor deposition mask 2 so that the temperature is constant.

In this way, in the opposing direction of the evaporation source 1 and the substrate 4, the temperature control mechanism 9 including the two independent

temperature control units

9 A and 9 B is provided in the mask holder 6. The medium inflow paths 12A1 and 12B1 and the medium outflow paths 12A2 and 12B2 of the

medium paths

12A and 12B connected to the heat exchange sections 20A and 20B that take heat from the medium of the

medium paths

12A and 12B of the

restriction sections

9A and 9B. For example, in the case of a water-cooled type, the connecting portions 25A and 25B are detachably connected to the

medium paths

12A and 12B through which the cooling water is circulated, and are connected to the connecting portions 25A and 25B. A check valve (not shown) is included so that when the mask holder 6 is removed, the cooling water does not leak from the connecting portions 25A and 25B. Further, in this embodiment, the temperature control part 9A on the evaporation source 1 side is further provided with the heat pipe 22 as described above, and as shown in FIG. 6, the pipe end for cooling the heat pipe 22 is provided. The cooling device 22A is detachable. This is because vaporized particles adhere to the vapor deposition mask 2 and the mask holder 6 one after another during film formation, and there is a risk of affecting the film formation pattern when used for a long time. This is because the replacement chamber 16 is arranged in parallel, and the mask holder 6 provided with the vapor deposition mask 2 can be removed from the vacuum chamber 7 so as to be freely removable. The replacement chamber 16 includes a cleaning mechanism for the mask holder 6 with the vapor deposition mask 2 so that the deposited film material is removed and discarded, or the film deposition material adhered to the vapor deposition mask 2 and the mask holder 6. The material recovery mechanism 17 recovers and reuses the film formation material, and also cleans the film formation material and particles remaining on the surface of the mask holder 6 with the vapor deposition mask 2 after the film formation material is removed. You may make it do. After cleaning, the mask holder 6 with the vapor deposition mask 2 may be returned to the vapor deposition apparatus for use, or replaced with a new mask holder 6 with the vapor deposition mask 2, and the previous mask holder 6 is prepared for the next replacement. You may make it stock.

In this embodiment, the medium inflow paths 12A1 and 12B1 and the medium outflow paths 12A2 of the

medium paths

12A and 12B in the two independent

temperature control units

9A and 9B in the mask holder 6 described above. , 12B2 and the heat pipe 22 of the temperature limited part 9A are installed in the rib part 24 as shown in FIGS. 6 to 9,

rib inlets

241 and 241 for introducing cooling water into the rib part 24. , 241 and the position where the rib part outlets 242 242 242 for discharging the cooling water from the rib part 24 and the direction of the heat pipe 22 of the temperature limited part 9A are viewed from the connecting part 25A (25B) side. By changing between the odd-numbered

rib portions

24A, 24A, 24A and the even-numbered

rib portions

24B, 24B, 24B, the direction of the temperature gradient in the rib portion 24 when viewed from the connecting portion 25A (25B) side is For example, they are formed alternately as indicated by arrows T in FIG. As a result, the temperature distribution in the mask holder 6 is made more uniform, so that distortion of the mask holder 6 due to heat is less likely to occur, and deformation due to heat of the vapor deposition mask 2 bonded to the mask holder 6 is also suppressed. As a result, the positional accuracy of the film formation pattern can be improved.

Further, in forming the above-described temperature gradient in each of the

medium paths

12A and 12B in the two independent

temperature control units

9A and 9B in the mask holder 6, the medium path of the evaporation source 1 side temperature control unit 9A. In 12A, the arrangement of the medium inflow path 12A1 and the medium outflow path 12A2 can be reversed from the arrangement shown in FIGS. 7 to 9 so as to have a temperature gradient from the evaporation source 1 side to the substrate 4 side. Thereby, it is possible to effectively suppress an increase in temperature at a portion near the evaporation source 1 of the mask holder 6 that is exposed to high-temperature radiant heat from the evaporation source 1.

In this way, the temperature gradient and temperature distribution in the mask holder 6 can be changed according to various purposes.

Further, a medium flow pipe 12C may be disposed as the medium path 12 around the mask opening 3 or between the mask openings 3 on the surface of the vapor deposition mask 2 on the substrate 4 side. A heat pipe 22C may be provided.

Further, the vapor deposition mask 2 may be provided with a temperature control unit 9C along the vapor deposition mask 2 in contact therewith, and the vapor deposition mask 2 may be provided with the temperature control mechanism 9. Since the temperature is controlled, the efficiency is improved, the temperature holding function is further improved, and the gap at the separated portion between the substrate 4 and the vapor deposition mask 2 can be used.

In addition, the mask holder 6 is made of an inorganic material such as metal or ceramic, or a material coated thereon, so that the heat absorption efficiency and strength are improved.

Further, in this embodiment, the respective evaporation port portions 8 arranged in parallel in the horizontal direction are provided at the distal end portion of the evaporation port portion forming projection portion 28 formed to project from the horizontally elongated extension portion 27 of the evaporation source 1. A heat shut-off portion 19 that shuts off the heat of the evaporation source 1 is provided around the evaporation port portion forming projection 28 or between the evaporation port portion forming projections 28.

Therefore, by using the configuration in which the evaporation port 8 is provided at the tip of each of the evaporation port forming projections 28 protruding from the horizontally long diffusion portion 27 of the evaporation source 1, the evaporation rate and material use efficiency are increased. By providing the evaporation port 8 at the tip of the projecting portion 28, the radiant heat from the heating range other than the evaporation port 8, that is, the high-temperature portion of the evaporation source 1, can be blocked by the heat blocking unit 19 as described above. It becomes the outstanding vapor deposition apparatus which can raise the cooling efficiency of the single-layer vapor deposition mask 2. FIG.

The heat blocking unit 19 may be any unit that shields heat. In this embodiment, a cooling plate is used, and a medium path for supplying a medium is provided in the same manner as the mask holder 6 to cool the heat. The exchange unit 20D is provided to function as the temperature control unit 9D provided in the evaporation source 1 to enhance the heat shielding effect.

Further, in the evaporation source 1 of this embodiment, as described above, the evaporation port portion forming protrusions 28 for forming the evaporation port portions 8 are provided on the horizontally elongated portion 27, and the evaporation port portions 8 are respectively provided on the upper end surfaces. However, the laterally elongated portion 27 may be provided with a flat protrusion portion that is wide in the lateral direction but narrow in the relative movement direction, and a large number of the evaporation port portions 8 may be arranged in parallel on the upper end surface.

Note that the vapor deposition mask 2 does not have to be divided and formed as described above as long as it can be formed in a long strip shape in a direction orthogonal to the relative movement direction.

In the second embodiment, a second vapor deposition mask 10 is disposed between the substrate 4 and the vapor deposition mask 2 as shown in FIG.

The second mask openings 11 of the second vapor deposition mask 10 are arranged to finally determine the film formation pattern, and the vapor deposition mask 2 located on the evaporation source 1 side with respect to the second vapor deposition mask 10. Compared to the mask opening 3, at least a lateral opening pattern orthogonal to the relative movement direction of the substrate 4 is provided in the same pattern, and the opening formation pitch corresponds to a difference in distance from the substrate 4. Therefore, the opening widths of the first vapor deposition mask 2 are set to be the same or wider so as not to interfere with the second vapor deposition mask 10.

As for the arrangement in the relative movement direction, as described above, it is a slit shape to ensure the evaporation rate or a dotted column shape, and it is not always necessary to have the same opening shape. The opening pattern is the same pattern. However, the opening formation pitch is set to a different formation pitch corresponding to the difference in distance from the substrate 4, and the opening width is the same or narrower.

Therefore, in this embodiment, the shadow SH caused by the first vapor deposition mask 2 can be suppressed as much as possible by providing the second vapor deposition mask 10, and the temperature of the second vapor deposition mask 10 can be kept constant. High-precision deposition can be performed.

That is, both the temperature of the first vapor deposition mask 2 itself and the vapor deposition mask 2 provided on the mask holder 6 provided with the vapor deposition mask 2 can be kept constant, and the first vapor deposition mask 2 and the substrate 4 Since the vapor deposition film having a film formation pattern finally determined by the second vapor deposition mask 10 further provided therebetween is formed, the temperature of the second vapor deposition mask 10 is further hardly increased. Therefore, the second vapor deposition mask 10 can be formed of a material having a larger linear expansion coefficient than that of the first vapor deposition mask 2, and therefore can be formed by, for example, electroforming. Thus, it is possible to perform vapor deposition with higher accuracy such that the tension may be relatively small.

Needless to say, when the second vapor deposition mask 10 is adhered to the substrate 4 to form a film, the film can be accurately formed according to the opening pattern of the second vapor deposition mask 10.

In this embodiment, the temperature control mechanism 9 is also provided in the first vapor deposition mask 2 itself, so that the temperature rise of the vapor deposition mask 2 can be further suppressed. Therefore, in this embodiment, the second vapor deposition mask 2 is further reduced. The temperature rise of the mask 10 can be further sufficiently suppressed.

Further, the medium path 12 of the vapor deposition mask installed temperature control unit 9C of the temperature control mechanism 9 is disposed between the mask openings 3 of the vapor deposition mask 2.

Therefore, the substrate 4 and the vapor deposition mask 2 are vapor-deposited in a separated state, and this separated space can be used. Further, the heat pipe 22 may be provided around the mask opening 3.

The present invention is not limited to the first and second embodiments, and the specific configuration of each component can be designed as appropriate.

Claims

The film forming material evaporated from the evaporation source is deposited on the substrate through the mask opening of the vapor deposition mask, and a vapor deposition film having a film formation pattern defined by the vapor deposition mask is formed on the substrate. In the vapor deposition apparatus, a limiting opening is provided between the evaporation source and the substrate disposed opposite to the evaporation source to limit a scattering direction of evaporated particles of the film forming material evaporated from the evaporation source. A mask holder having a scattering restriction portion is disposed, and the vapor deposition mask disposed apart from the substrate is bonded to the mask holder, and the temperature of the vapor deposition mask is attached to at least one of the mask holder or the vapor deposition mask. A temperature control mechanism for holding the substrate, and holding the substrate in a separated state with respect to the vapor deposition mask with respect to the mask holder and the evaporation source provided with the vapor deposition mask The vapor deposition apparatus is configured to be relatively movable so that a vapor deposition film having a film formation pattern defined by the vapor deposition mask is formed on the substrate in a wider range than the vapor deposition mask by the relative movement. .
The vapor deposition mask provided with the evaporation source containing the film forming material and the mask opening through which the evaporated particles of the film forming material evaporated from the evaporation port of the evaporation source pass in a vapor deposition chamber having a reduced pressure atmosphere And a plurality of the evaporation port portions are arranged side by side, and evaporated particles scattered from the plurality of evaporation port portions pass through the mask opening portions and are deposited on a substrate that is positioned in a separated state from the vapor deposition mask. A vapor deposition film having a film formation pattern determined by a vapor deposition mask is formed on the substrate, and is adjacent to or separated from the evaporation source and the substrate disposed opposite to the evaporation source. The deposition is provided with the mask holder having the scattering restricting portion provided with the restricting opening that does not allow evaporation particles from passing through the evaporation port portion at a position, and the mask holder is disposed in a separated state from the substrate. Ma The temperature control mechanism that suppresses the temperature rise of the vapor deposition mask and keeps the temperature constant is provided on at least one of the mask holder or the vapor deposition mask, and the substrate is provided with the vapor deposition mask. The mask holder and the evaporation source are moved relative to each other while being kept apart from the deposition mask, and the deposition film of the deposition pattern of the deposition mask is made continuous in this relative movement direction to be smaller than the substrate. The vapor deposition apparatus according to claim 1, wherein the vapor deposition mask is configured to form a vapor deposition film over a wide range.
A plurality of the evaporation ports of the evaporation source are arranged side by side in a transverse direction orthogonal to the relative movement direction of the substrate, and the restriction opening of the scattering restriction provided in the mask holder is along the transverse direction. The vaporized particles evaporating from the respective evaporation port portions pass only through the limiting opening portion facing each other and further pass through the mask opening portion of the vapor deposition mask facing the limiting opening portion. A vapor deposition film of the film formation pattern is formed on the substrate, and the evaporation particles from the evaporation port at adjacent or separated positions are attached and trapped so that the evaporation particles are scattered by the restriction opening. The vapor deposition apparatus according to claim 2, wherein the vapor deposition apparatus is configured to be limited.
The vapor deposition apparatus according to claim 1, wherein the vapor deposition mask is attached to an end of the mask holder on the substrate side.
The vapor deposition apparatus according to claim 4, wherein a tension is applied to the vapor deposition mask at an end of the mask holder on the substrate side.
6. The vapor deposition apparatus according to claim 5, wherein the mask holder stretches the vapor deposition mask by applying a tension in a relative movement direction of the substrate.
The vapor deposition mask is divided into a plurality of pieces in a lateral direction perpendicular to the relative movement direction of the substrate, and the divided vapor deposition masks are attached to the mask holder in a juxtaposed state in the lateral direction. The vapor deposition apparatus according to claim 1.
A plurality of the evaporation port portions of the evaporation source are arranged in parallel in a lateral direction orthogonal to the relative movement direction of the substrate, and the scattering opening in which the restriction opening portion is provided in an opposing state for each of the one or a plurality of evaporation port portions. The vapor deposition apparatus according to claim 1, wherein the vapor deposition mask is attached to an end portion of the mask holder on the substrate side so as to cover each restriction opening of the mask holder having a restriction portion.
A rib portion extending in the relative movement direction of the substrate is provided between the restriction opening portions of the mask holder, and the vapor deposition mask provided in each of the restriction opening portions is provided on the substrate-side front end surface of the rib portion. 2. The vapor deposition apparatus according to claim 1, further comprising a mask mounting support surface for supporting and joining.
The mask holder extends in the relative movement direction of the substrate, and prevents the mask holder from being deformed by tension applied to the vapor deposition mask when the vapor deposition mask is stretched on the mask holder. 2. The vapor deposition apparatus according to claim 1, wherein a rib portion for improving the rigidity of the mask holder is provided between the restricting openings.
The temperature control mechanism has a configuration in which a medium path or a heat pipe that circulates a medium whose temperature is controlled by heat exchange is provided around the restriction opening of the mask holder or between the restriction openings. The vapor deposition apparatus according to claim 1.
The temperature control mechanism is configured by providing the medium path or the heat pipe for circulating a medium around the restriction opening or between the restriction openings in the mask holder, and the substrate and the evaporation source. The vapor deposition apparatus according to claim 11, wherein a plurality of stages are provided in a direction opposite to the direction.
The temperature control mechanism includes, in the mask holder, the evaporation source side temperature control unit and the substrate side temperature control unit, and the medium path or the media path for allowing each temperature control unit to circulate a medium independently. The vapor deposition apparatus according to claim 12, wherein the independent heat pipe is built in.
The temperature control mechanism arranges the medium path or the heat pipe so that a temperature gradient generated in the medium path or the heat pipe is generated in different directions in each of the stages provided in the facing direction. The vapor deposition apparatus according to claim 11, wherein the vapor deposition apparatus is configured.
The vapor deposition apparatus according to claim 9, wherein the temperature control mechanism is configured by arranging the medium path or the heat pipe in the rib portion.
The temperature control mechanism is configured to cause the temperature gradient generated in the medium path or the heat pipe disposed in the rib portion to be generated in different directions between the adjacent rib portions. The vapor deposition apparatus according to claim 15, wherein a pipe is arranged.
The vapor deposition apparatus according to claim 1, wherein the mask holder is formed such that the restriction opening has a shape in which the opening area on the evaporation source side is smaller than the opening area on the substrate side.
The independent evaporation source side temperature control unit and the substrate side temperature control unit are provided between the limiting openings of the mask holder, and the medium flow rate of the medium path of the evaporation source side temperature control unit Alternatively, the contact area with the medium, the number of the heat pipes, or the cross-sectional area of the heat pipes is increased from the substrate-side temperature-controlled part, and the temperature control capability of the evaporation source-side temperature-controlled part is enhanced. The vapor deposition apparatus according to claim 13.
On the surface of the vapor deposition mask on the substrate side, a medium path or a heat pipe for circulating a medium whose temperature is controlled by heat exchange is disposed around the mask opening or between the mask openings, The vapor deposition apparatus according to claim 1, wherein the temperature control mechanism is provided in the vapor deposition mask.
2. The evaporation apparatus according to claim 1, wherein the evaporation port portion of the evaporation source has a slit shape that is long in the relative movement direction of the substrate and narrow in the lateral direction.
When the substrate and the vapor deposition mask are vapor-deposited in a separated state, and a vapor deposition film having a film formation pattern by the vapor deposition mask is formed on the substrate, the shadow SH that is a side edge inclined portion of the vapor deposition film is formed on the substrate and the vapor deposition. When the gap with the mask is G, the opening width in the lateral direction of the evaporation port portion is φx, and the distance between the evaporation port portion and the vapor deposition mask is TS, this shadow SH is adjacent to the mask. 21. The vapor deposition apparatus according to claim 20, wherein the gap G can be set large by setting the opening width φx of the vapor deposition port portion small so as not to reach the interval PP with the vapor deposition film.
All or part of the evaporation port portions arranged in parallel in the lateral direction orthogonal to the relative movement direction of the substrate are provided in one evaporation source, and the evaporated particle generating portion for heating the film forming material And an elongate diffusion unit that diffuses the vaporized particles generated from the evaporative particle generation unit and makes the pressure uniform, and constitutes the evaporation source, and a plurality of the evaporation ports are arranged in the horizontal direction in the elongate diffusion unit. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is formed.
A plurality of the evaporation port portions of the evaporation source are juxtaposed in a lateral direction orthogonal to the relative movement direction of the substrate, and each evaporation port portion protrudes toward the substrate side of the evaporation source. A heat shut-off portion that cuts off the heat of the evaporation source is provided around the evaporation port portion forming projection or between the evaporation port portion forming projections. The vapor deposition apparatus according to 1.
A plurality of the mask openings of the vapor deposition mask are arranged in parallel in a lateral direction orthogonal to the relative movement direction of the substrate, and each mask opening is formed or formed in a slit shape long in the relative movement direction. A plurality of the above-mentioned are arranged side by side in the relative movement direction, and the total opening length in the relative movement direction is set so as to become longer as the distance in the lateral direction is longer than the central part of the restriction opening. Item 2. The vapor deposition apparatus according to Item 1.
The formation pitch in the lateral direction orthogonal to the relative movement direction of the substrate of the mask opening of the vapor deposition mask that determines the film formation pattern to be vapor deposited on the substrate is set to be larger than the pitch of the film deposition pattern of the vapor deposition film and the substrate. The gap G between the evaporation mask and the distance between the substrate and the evaporation source is set to be narrow by a difference corresponding to at least one of the sizes, and the relative movement direction of the substrate at the mask opening of the evaporation mask The opening dimension in the lateral direction orthogonal to the deposition width of the deposition pattern of the vapor deposition film is at least of the gap G, the distance, and the opening width φx in the lateral direction of the evaporation port portion of the evaporation source. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is set wide by a difference corresponding to any one of the sizes.
The vapor deposition apparatus according to claim 1, wherein the mask holder is connected to the temperature control mechanism via a connecting portion so as to be detachable from the vapor deposition apparatus.
The vapor deposition apparatus according to claim 1, further comprising a cleaning mechanism for cleaning a film forming material attached to at least one of the mask holder or the vapor deposition mask attached to the mask holder.
The vapor deposition apparatus according to claim 1, further comprising a material recovery mechanism for recovering a film forming material attached to at least one of the mask holder or the vapor deposition mask attached to the mask holder.
The vapor deposition apparatus according to claim 1, wherein a second vapor deposition mask is disposed between the substrate and the vapor deposition mask.
The second mask opening of the second vapor deposition mask has at least the relative movement direction of the substrate as compared with the mask opening of the vapor deposition mask located on the evaporation source side from the second vapor deposition mask. The opening pattern in the horizontal direction orthogonal to the opening pattern is provided in the same pattern, and the opening formation pitch is set to be different according to the difference in distance from the substrate, and the opening width is set to be the same or narrower. The vapor deposition apparatus of Claim 29 characterized by these.
30. The vapor deposition apparatus according to claim 29, wherein the second vapor deposition mask is formed of a material having a larger linear expansion coefficient than the vapor deposition mask located on the evaporation source side.
The vapor deposition apparatus according to claim 1, wherein the film forming material is an organic material.
A vapor deposition method using the vapor deposition apparatus according to any one of claims 1 to 32 to form a vapor deposition film having a film formation pattern defined by the vapor deposition mask on the substrate.