WO2012104744A1 - Led assembly comprising a light scattering layer - Google Patents
Led assembly comprising a light scattering layer Download PDFInfo
- Publication number
- WO2012104744A1 WO2012104744A1 PCT/IB2012/050322 IB2012050322W WO2012104744A1 WO 2012104744 A1 WO2012104744 A1 WO 2012104744A1 IB 2012050322 W IB2012050322 W IB 2012050322W WO 2012104744 A1 WO2012104744 A1 WO 2012104744A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- light scattering
- systems
- scattering layer
- led
- Prior art date
Links
- 238000000149 argon plasma sintering Methods 0.000 title claims abstract description 46
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 19
- 230000005540 biological transmission Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 11
- 229920001296 polysiloxane Polymers 0.000 description 8
- 230000000712 assembly Effects 0.000 description 5
- 238000000429 assembly Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000000411 transmission spectrum Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Definitions
- LED assembly comprising a light scattering layer
- the present invention relates to the field of light emission diode (LED) assemblies.
- LED light emission diode
- the invention relates to enhanced uniform emission phosphor- converting LED light assemblies (pcLED).
- pcLED uniform emission phosphor- converting LED light assemblies
- White light emitting LEDs generally comprise a blue emitting LED combined with a phosphor layer that is stimulated by the blue emission of the LED into emitting yellow/red light, the combination of the yellow/red and blue emissions providing a white light.
- the direct path length (not scattered) in the phosphor layer of the light rays emitted by the blue emitting LED is equal to the thickness of the phosphor layer.
- the direct path length for blue light rays increases.
- the fraction of absorbed blue light rays by the phosphor layer is lower for the light rays with an emission angle of 0° than for the light rays with an increasing emission angle. Since the converted light emitted by the phosphor layer always has an almost Lambertian over angle distribution, the white light emitted by the LED contains more blue light emitted by the LED leading to a higher correlated color temperature for small emission angles around normal emission with an emission angle of about 0-30°.
- the phosphor layer is a Y 3 Al 5 0i 2 :Ce 3+ (YAG:Ce). In case of such a YAG:Ce phosphor layer emitted light becomes yellowish with increasing emission angle, perceived as yellow ring.
- a LED assembly comprising a LED die, a phosphor layer, a filter layer and a light scattering layer provided between the phosphor layer and the filter layer in the path of the light emitted by the LED die, whereby
- the difference in refractive index ⁇ between the light scattering layer and the material of the filter layer adjacent to the light scattering layer is ⁇ >0.2, preferably ⁇ >0.3 and;
- the difference in refractive index ⁇ between the light scattering layer and the material of the layer adjacent to the light scattering layer in the direction of the LED is ⁇ >0.2, preferably ⁇ >0.3 .
- the product of the thickness of the light scattering layer D and the refractive index n of the light scattering layer is 1900 nm > n*D >400 nm.
- the LED die according to the present invention is preferably a blue emitting LED although this is not limiting.
- the layer adjacent to the light scattering layer in the direction of the LED may in some applications of the invention be a phosphor layer, however, in other applications this layer may be e.g. a glass layer provided between a phosphor layer and the light scattering layer.
- a phosphor layer according to the present invention comprises preferably one or more red to green emitting materials which absorb light from the LED die.
- a preferred phosphor layer material is e.g. Lui.5Yi. 5 Al 5 0i2:Ce 3+ (LuYAG:Ce) although this is not limiting and any suitable material known to the skilled person in the art may be used.
- filter layer preferably comprises a dielectric filter layer.
- the filter layer is developed in such a manner that light rays with a wavelength of about 400 nm to 500 nm, preferably of about 420 nm to 490 nm, emitted from the LED die are at least partially reflected depending on their emission angle to the normal on the filter layer.
- the filter layer may comprise several sub-layers (actually this is one preferred embodiment of the present invention as will be described in more detail later on) so the term “layer” in this context is not intended to be limiting in that sense that this layer consists out of one material only.
- the filter layer is chosen from the layers described in the European patent application 09175903 which is hereby incorporated by reference. Especially it is preferred that the filter layer comprises a dielectric layer coating of alternating low and high reflective index materials.
- light scattering layer especially means and/or comprises a layer which is capable of scattering incident light and which nevertheless has a good transparency.
- light is scattered only at the interfaces of the scattering layer with the adjacent conversion layer and the filter layer by refraction at the interfaces.
- the package efficiency is increased for desired color over angle uniformity.
- a wider range of surface roughness of the conversion layer or substrate layer can be used.
- the LED assembly shows an improved color targeting capability.
- the product of the thickness of the light scattering layer D and the refractive index n of the light scattering layer is 1600 nm > n*D > 900 nm, more preferably 1400 nm > n*D >1000 nm and most preferred 1200 nm > n*D >1100 nm. This has been shown in practice to furthermore increase the capability of the light scattering layer.
- the thickness D of the light scattering layer is 800 nm > D > 300 nm (i.e. regardless of the refractive index). A higher thickness may lead to problems in the manufacturing process of the light scattering layer, a lower thickness may lead to a dramatic decrease in performance. More preferably the thickness D of the light scattering layer is 700 nm > D > 400 nm, more preferred 600 nm > D > 500 nm.
- the material of the light scattering layer is essentially chosen from the group comprising inorganic oxides, preferably from the group comprising Zr0 2 , Y2O3, Ta 2 0 5 , Nb 2 0 5 , Si0 2 , Ti0 2 , AI2O3, Hf0 2 , or mixtures thereof.
- additives may also be present in the bulk compositions. These additives also include transition metal elements, which might be applied to introduce dedicated light absorption properties of the layers.
- the present invention furthermore relates to a system comprising a LED assembly according to the present invention, being used in one or more of the following applications:
- Fig. 1 shows a schematic cross-sectional view of a LED assembly according to one embodiment of the present invention.
- Fig. 2 shows the transmission at 0° as a function of the wavelength for a LED assembly according to Example I and one comparative Example.
- Fig. 3 shows several transmission spectra of the LED assembly according to Example I for different angles
- Fig. 4 shows several transmission spectra of the LED assembly according to Example II for different angles
- Fig. 5 shows a diagram depicting the color point variation as a function of the emission angle for the assembly according to Example II and a comparative example.
- Fig. 6 shows the transmission at 0° as a function of the wavelength for a LED assembly according to Example III and one comparative Example.
- Fig. 7 shows the transmission at 0° as a function of the wavelength for a LED assembly according to Example IV and one comparative Example.
- Fig. 8 shows the transmission at 0° as a function of the wavelength for a LED assembly according to Example V and one comparative Example.
- Fig. 9 shows the transmission at 0° as a function of the wavelength for a LED assembly according to Example VI and one comparative Example.
- Fig. 10 shows the transmission at 0° as a function of the wavelength for a LED assembly according to Example VII and one comparative Example.
- Fig. 11 shows the transmission at 0° as a function of the wavelength for a LED assembly according to Example VIII and one comparative Example.
- Fig. 12 shows the transmission at 0° as a function of the wavelength for a
- Fig. 1 shows a schematic cross-sectional view of a LED assembly 1 according to one embodiment of the present invention. It consists of a LED die 10 (preferably a blue LED), whereby a phosphor layer 12, the light scattering layer 16 and a filter layer 14 are provided on top of the LED die 10.
- a LED die 10 preferably a blue LED
- a phosphor layer 12 the light scattering layer 16 and a filter layer 14 are provided on top of the LED die 10.
- Example I a light scattering layer as well as a filter layer (consisting of several sub-layers) were provided on a phosphor layer according to Table I.
- Fig. 2 shows the transmission at 0° vs. the wavelength for the assembly according to Example I (straight line) and the comparative Example (dashed line). It can clearly be seen that the inventive assembly shows some "nudges” and “edges” which show the improved scattering features.
- Fig. 3 shows several transmission spectra of the LED assembly according to Example I for different angles. Also here the improved properties of the inventive assembly can clearly be seen.
- Fig. 4 shows several transmission spectra of the LED assembly according to Example II for different angles, clearly (as in Fig. 3) the improved emittance profile is depicted.
- Fig. 6 shows the transmission at 0° vs, the wavelength for the assembly according to Example III (straight line) and a comparative Example without light scattering layer (dashed line). It can clearly be seen that the inventive assembly shows some "nudges” and “edges” which show the improved scattering features.
- Fig. 7 shows the transmission at 0° vs, the wavelength for the assembly according to Example IV (straight line) and a comparative Example without light scattering layer (dashed line). It can clearly be seen that the inventive assembly shows some "nudges” and “edges” which show the improved scattering features.
- a fifth inventive assembly was made in similar fashion as Examples I to IV with the setup as defined in Table V.
- Fig. 8 shows the transmission at 0° vs, the wavelength for the assembly according to Example V (straight line) and a comparative Example without light scattering layer (dashed line). It can clearly be seen that the inventive assembly shows some "nudges” and “edges” which show the improved scattering features.
- Fig. 9 shows the transmission at 0° vs, the wavelength for the assembly according to Example VI (straight line) and a comparative Example without light scattering layer (dashed line). It can clearly be seen that the inventive assembly shows some "nudges” and "edges" which show the improved scattering features.
- a seventh inventive assembly was made in similar fashion as Examples I to VI with the setup as defined in Table VII.
- Fig. 10 shows the transmission at 0° vs, the wavelength for the assembly according to Example VII (straight line) and a comparative Example without light scattering layer (dashed line). It can clearly be seen that the inventive assembly shows some "nudges” and "edges" which show the improved scattering features.
- a eighth inventive assembly was made in similar fashion as Examples I to VII with the setup as defined in Table VIII.
- Fig. 11 shows the transmission at 0° vs, the wavelength for the assembly according to Example VIII (straight line) and a comparative Example without light scattering layer (dashed line). It can clearly be seen that the inventive assembly shows some "nudges” and “edges” which show the improved scattering features.
- a ninth inventive assembly was made in similar fashion as Example II with the setup as defined in Table IX.
- Fig. 12 shows the transmission at 0° vs, the wavelength for the assembly according to Example IX (straight line) and a comparative Example without light scattering layer (dashed line). It can clearly be seen that the inventive assembly shows some “nudges” and “edges” which show the improved scattering features.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Optical Elements Other Than Lenses (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Planar Illumination Modules (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280007301.6A CN103329294B (en) | 2011-02-01 | 2012-01-24 | LED component including light scattering layer |
JP2013550984A JP2014504030A (en) | 2011-02-01 | 2012-01-24 | LED assembly having light scattering layer |
RU2013140419/28A RU2586268C2 (en) | 2011-02-01 | 2012-01-24 | Light-emitting diode assembly, including light-scattering layer |
KR1020137023008A KR102066063B1 (en) | 2011-02-01 | 2012-01-24 | Led assembly comprising a light scattering layer |
US13/976,479 US9214609B2 (en) | 2011-02-01 | 2012-01-24 | LED assembly comprising a light scattering layer |
EP12701956.0A EP2671266B1 (en) | 2011-02-01 | 2012-01-24 | Led comprising a light scattering layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11152838.6 | 2011-02-01 | ||
EP11152838A EP2482350A1 (en) | 2011-02-01 | 2011-02-01 | LED assembly comprising a light scattering layer |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012104744A1 true WO2012104744A1 (en) | 2012-08-09 |
Family
ID=44144732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2012/050322 WO2012104744A1 (en) | 2011-02-01 | 2012-01-24 | Led assembly comprising a light scattering layer |
Country Status (7)
Country | Link |
---|---|
US (1) | US9214609B2 (en) |
EP (2) | EP2482350A1 (en) |
JP (2) | JP2014504030A (en) |
KR (1) | KR102066063B1 (en) |
CN (1) | CN103329294B (en) |
RU (1) | RU2586268C2 (en) |
WO (1) | WO2012104744A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6382792B2 (en) * | 2012-03-30 | 2018-08-29 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Optical cavity including light emitting device and wavelength converting material |
DE102014112973A1 (en) * | 2014-09-09 | 2016-03-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
KR102252994B1 (en) | 2014-12-18 | 2021-05-20 | 삼성전자주식회사 | Light emitting device package and fluorescent film for the same |
KR102415331B1 (en) | 2015-08-26 | 2022-06-30 | 삼성전자주식회사 | light emitting diode(LED) package and apparatus including the same |
CN109411590B (en) * | 2017-08-17 | 2020-01-07 | 光宝光电(常州)有限公司 | Light emitting diode structure and light emitting unit |
US10854794B2 (en) * | 2017-12-20 | 2020-12-01 | Lumileds Llc | Monolithic LED array structure |
US10686596B2 (en) * | 2018-03-01 | 2020-06-16 | Microsoft Technology Licensing, Llc | Mutually authenticated adaptive management interfaces for interaction with sensitive infrastructure |
KR20200051197A (en) * | 2018-11-05 | 2020-05-13 | 삼성전자주식회사 | Light emitting device |
JP2023134141A (en) * | 2022-03-14 | 2023-09-27 | スタンレー電気株式会社 | Semiconductor light emitting device and vehicle light having the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080079015A1 (en) * | 2006-09-29 | 2008-04-03 | Benjamin Claus Krummacher | Optoelectronic component having a luminescence conversion layer |
WO2010064177A1 (en) * | 2008-12-02 | 2010-06-10 | Philips Intellectual Property & Standards Gmbh | Led assembly |
WO2010134011A2 (en) * | 2009-05-19 | 2010-11-25 | Koninklijke Philips Electronics N.V. | Light scattering and conversion plate for leds |
WO2011007276A1 (en) * | 2009-07-15 | 2011-01-20 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device including a filter and a scattering structure |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006261540A (en) * | 2005-03-18 | 2006-09-28 | Stanley Electric Co Ltd | Light emitting device |
JP4275718B2 (en) * | 2006-01-16 | 2009-06-10 | パナソニック株式会社 | Semiconductor light emitting device |
US7521862B2 (en) * | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
RU2402108C1 (en) * | 2009-11-09 | 2010-10-20 | Владимир Семенович Абрамов | Light-emitting diode radiation source for transport control systems |
EP2323184A1 (en) | 2009-11-13 | 2011-05-18 | Koninklijke Philips Electronics N.V. | LED assembly |
-
2011
- 2011-02-01 EP EP11152838A patent/EP2482350A1/en not_active Withdrawn
-
2012
- 2012-01-24 WO PCT/IB2012/050322 patent/WO2012104744A1/en active Application Filing
- 2012-01-24 EP EP12701956.0A patent/EP2671266B1/en active Active
- 2012-01-24 JP JP2013550984A patent/JP2014504030A/en active Pending
- 2012-01-24 CN CN201280007301.6A patent/CN103329294B/en active Active
- 2012-01-24 US US13/976,479 patent/US9214609B2/en active Active
- 2012-01-24 RU RU2013140419/28A patent/RU2586268C2/en active
- 2012-01-24 KR KR1020137023008A patent/KR102066063B1/en active IP Right Grant
-
2016
- 2016-06-30 JP JP2016129893A patent/JP6646536B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080079015A1 (en) * | 2006-09-29 | 2008-04-03 | Benjamin Claus Krummacher | Optoelectronic component having a luminescence conversion layer |
WO2010064177A1 (en) * | 2008-12-02 | 2010-06-10 | Philips Intellectual Property & Standards Gmbh | Led assembly |
WO2010134011A2 (en) * | 2009-05-19 | 2010-11-25 | Koninklijke Philips Electronics N.V. | Light scattering and conversion plate for leds |
WO2011007276A1 (en) * | 2009-07-15 | 2011-01-20 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device including a filter and a scattering structure |
Also Published As
Publication number | Publication date |
---|---|
JP6646536B2 (en) | 2020-02-14 |
US20130299865A1 (en) | 2013-11-14 |
KR102066063B1 (en) | 2020-01-15 |
CN103329294A (en) | 2013-09-25 |
CN103329294B (en) | 2016-08-10 |
JP2014504030A (en) | 2014-02-13 |
EP2671266A1 (en) | 2013-12-11 |
RU2586268C2 (en) | 2016-06-10 |
KR20140004745A (en) | 2014-01-13 |
JP2016197738A (en) | 2016-11-24 |
EP2482350A1 (en) | 2012-08-01 |
EP2671266B1 (en) | 2016-07-20 |
RU2013140419A (en) | 2015-03-10 |
US9214609B2 (en) | 2015-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9214609B2 (en) | LED assembly comprising a light scattering layer | |
EP2374165B1 (en) | Led assembly | |
US10648642B2 (en) | LED apparatus employing tunable color filtering using multiple neodymium and fluorine compounds | |
CN104678469B (en) | Graded index materials distributed bragg reflector mirror and its manufacturing method | |
US9099626B2 (en) | Broadband dielectric reflectors for LED | |
US10797203B2 (en) | Light-emitting device and method for manufacturing the light-emitting device having a first dielectric multilayer film arranged on the side surface of the light emitting element | |
TWI823976B (en) | Wavelength conversion elements, methods of making the same, light conversion devices, and methods for generating white light | |
JP6943984B2 (en) | Light wavelength converter and light emitting device | |
WO2016057604A1 (en) | Led apparatus employing neodymium-fluorine materials | |
JP2013041876A (en) | White light emitting device and semiconductor light emitting system | |
TW201347243A (en) | Broadband dielectric reflectors for LED | |
CA3007011C (en) | Led apparatus employing tunable color filtering using multiple neodymium and fluorine compounds | |
JP6644233B2 (en) | Light emitting device | |
CA3009501C (en) | Composite material for lighting filtering, lighting apparatus, and method for determining doping concentration or thickness of composite material | |
WO2011058497A2 (en) | Led assembly | |
WO2014132542A1 (en) | Light emitting element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12701956 Country of ref document: EP Kind code of ref document: A1 |
|
REEP | Request for entry into the european phase |
Ref document number: 2012701956 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012701956 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13976479 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2013550984 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20137023008 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2013140419 Country of ref document: RU Kind code of ref document: A |