WO2012103942A1 - Agencement de capteur - Google Patents

Agencement de capteur Download PDF

Info

Publication number
WO2012103942A1
WO2012103942A1 PCT/EP2011/051479 EP2011051479W WO2012103942A1 WO 2012103942 A1 WO2012103942 A1 WO 2012103942A1 EP 2011051479 W EP2011051479 W EP 2011051479W WO 2012103942 A1 WO2012103942 A1 WO 2012103942A1
Authority
WO
WIPO (PCT)
Prior art keywords
resonator
sensor arrangement
res
san
pressure
Prior art date
Application number
PCT/EP2011/051479
Other languages
English (en)
Inventor
Pascal Nicolay
Werner Ruile
Xavier PEROIS
Original Assignee
Epcos Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos Ag filed Critical Epcos Ag
Priority to PCT/EP2011/051479 priority Critical patent/WO2012103942A1/fr
Priority to DE112011104825.4T priority patent/DE112011104825B4/de
Publication of WO2012103942A1 publication Critical patent/WO2012103942A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L21/00—Vacuum gauges
    • G01L21/16—Vacuum gauges by measuring variation of frictional resistance of gases
    • G01L21/22—Vacuum gauges by measuring variation of frictional resistance of gases using resonance effects of a vibrating body; Vacuum gauges of the Klumb type

Definitions

  • the present invention concerns a sensor arrangement for measuring a pressure of an environment comprising an
  • a vacuum chamber can be connected to a processing machine, then opened.
  • the pressure inside the processing machine should equal the pressure inside the vacuum chamber. Otherwise, cross-contamination can occur when gas move from the machine into the vacuum chamber and vice-versa.
  • a sensor arrangement that is included into the vacuum chamber allows to monitor the pressure inside the vacuum chamber. In particular, the sensor arrangement allows to verify that pressure inside the vacuum chamber equals the pressure inside the processing machine prior to the opening of the vacuum chamber.
  • leaks can occur in a vacuum chamber and these leaks can also cause a contamination of the vacuum chamber.
  • the vacuum chamber comprises a pressure sensor
  • the contamination can be detected before the vacuum chamber is connected to a manufacturing facility. Otherwise, a contaminated vacuum chamber can contaminate the whole facility.
  • Sensor arrangements to monitor a pressure are also commonly used as part of a processing unit. They allow to monitor the processing.
  • a typical application is a vacuum chamber that is pumped empty, e.g. for manufacturing a semi-conductor device. The sensor arrangement monitors the pressure inside the chamber and determines when a sufficient vacuum has been reached so that the next processing step can be started.
  • a sensor arrangement with a fast response time is crucial for an efficient monitoring.
  • Pirani sensors or thermocouple-based gauges are used for this purpose.
  • the gauge use the pressure dependence of the thermal conductivity of a gas to infer pressure there from.
  • sensing is basically done by plunging a piece of heated matter inside a gas and then monitoring its pressure- dependent equilibrium temperature, using thermocouples.
  • Pirani gauges are based on the same measurement principle.
  • the heated element is a hot wire which constitutes one arm of a Wheatstone bridge.
  • the wire loses heat to the gas as the gas molecules collide with the wire removing heat. If the gas pressure is reduced, the number of molecules present will fall proportionately and the wire will rise in temperature due to the reduced cooling effect. This breaks the balance of the bridge because the wire resistivity changes with the temperature. A feed-back loop on the heating power then allows for increasing or decreasing the wire temperature in order to keep it constant. Once the bridge balance is
  • EP 1944595 A2 discloses a sensor arrangement, wherein a heated SAW filter is used as a sensor element.
  • a sensor arrangement according to claim 1 and a method to measure the pressure of an environment comprising an
  • the present invention provides a sensor arrangement for measuring a pressure of an environment comprising an
  • the sensor arrangement comprises a resonator that is heated during a measurement and means to measure the resonance frequency of the resonator.
  • the present invention is based on the idea that the thermal conductivity of gases is strongly and almost linearly
  • Knudsen regime This pressure range is called Knudsen regime.
  • the Knudsen regime is characterized in that pressure is low enough so that gas molecules do not collide with each other.
  • thermal conduction happens when a gas molecule collides with the heated resonator, then the gas molecule collides with the walls of the vacuum chamber. Accordingly, there is a direct heat transmission from the resonator to the walls. Therefore, in Knudsen regime, there is no conduction through gas nor convection. In this regime, thermal conduction is directly proportional to the number of molecules, that is to the pressure.
  • a resonator is chosen wherein the resonance frequency of the resonator is highly temperature dependent.
  • the resonance frequency of the resonator is highly temperature dependent.
  • the resonator is cooled. Accordingly, in an environment with a high pressure, there will be more thermal conduction between the resonator and the gas. Further, the sensor arrangement comprises means to measure the resonance frequency of the resonator. A pressure change causes a change in the thermal conduction between the resonator and the gas. This causes a corresponding change of the resonator operating temperature. Therefore, measuring the temperature-dependent resonance frequency of the resonator exposed to a gas atmosphere allows deducing the pressure of the gas atmosphere.
  • the resonator is heated up.
  • the sensor arrangement can comprise a heating element that is thermally coupled to the resonator.
  • an RF power can be applied to the resonator. Due to energy losses inside the resonator, the resonator is heated by dissipation energy. In a typical SAW resonator, dissipation energy increases the temperature of the resonator by 30°K per applied Watt. However, it is possible to increase this value up to 50 to 80 °K/W. This effect is called self- heating. The self-heating is higher if more power is injected into the resonator. The self-heating can also be increased if the dimensions of a SAW resonator are reduced and the applied power is constant.
  • the resonator can be heated by a heating element that is thermally coupled to the resonator or by using the self-heating . Heating by a thermally coupled heating element and by self-heating can also be combined in one sensor arrangement .
  • the temperature-dependency of the resonance frequency of a resonator e. g. a resonator based on acoustic waves or a MEMS resonator, is discussed based on the example of a surface acoustic wave (SAW) resonator.
  • SAW surface acoustic wave
  • the wavelength of an acoustic wave at the resonance frequency is defined by the distance between two neighboring fingers in an Inter Digital Transducer (IDT) deposited on a
  • the resonance frequency of a SAW resonator is proportional to the celerity of the acoustic wave inside the resonator. If the resonator is heated the elasticity
  • coefficients of its constituting material change.
  • the material becomes less stiff. This causes a decrease in the celerity of the acoustic wave and therefore a further decrease of the resonance frequency. Cooling will make the resonator material more stiff, thereby increasing the
  • the sensor arrangement according to the present invention is sensitive over a pressure range that ranges from O.OlmTorr to multiples of the atmospheric pressure. However, as will be discussed in the following, the sensitivity of the sensor arrangement changes in this pressure range.
  • the sensitivity of a sensor arrangement according to the present invention is high in medium vacuum, almost zero in a rough vacuum, and small near atmospheric pressure.
  • a medium vacuum is characterized thereby that it is a Knudsen regime.
  • the pressure range of a medium vacuum ranges from 1 mTorr to 25 Torr.
  • a rough or low vacuum is defined thereby that the thermal conductivity does not depend on pressure anymore.
  • convection is the dominant form of thermal conductivity.
  • the thermal conductivity again depends on pressure.
  • the sensor arrangement has the highest sensitivity in a high or medium vacuum which corresponds to a pressure range of 0.01 mTorr to 25 Torr.
  • the gas is in a Knudsen regime so that there is no thermal conduction by convection. There is also no thermal conduction through gas, that is no thermal gradient from resonator surface to the surrounding chamber walls.
  • the sensitivity of the sensor arrangement is based on the hydrostatic
  • the senor arrangement according to the present invention can also be used in an environment of atmospheric pressure, but the sensitivity will again be smaller.
  • the frequency of the resonator comprises means to apply an RF signal to the resonator and means to measure the impedance, the admittance or the S-parameters of the resonator at the frequency of the applied RF signal.
  • the impedance is minimal at the resonance frequency.
  • the resonator is a surface acoustic wave (SAW) resonator or a bulk acoustic wave (BAW) resonator.
  • a BAW resonator can be a (Thin) Film Bulk Acoustic Wave
  • FBAR FBAR
  • HBAR high-overtone bulk acoustic resonators
  • SMR surface mounted resonator
  • the resonator can be a one-port SAW resonator.
  • SAW resonators provide numerous advantages, like very good reproducibility, a high resonance-frequency, a high quality factor and a high resolution.
  • the thermal resistance of the resonator to the atmosphere should be as small as possible, whereas the thermal resistance of the resonator to a
  • the substrate should be as high as possible. Further, the thermal capacity of the sensor arrangement needs to be as small as possible in order to allow for an as fast as possible
  • the arrangement can provide a chip-sized-package (CSP) .
  • CSP chip-sized-package
  • a chip-sized-package requires less chip material compared to other modules.
  • a small amount of chip material is equivalent to a small thermal capacity.
  • a flip-chip mounted SAW resonator can be fixed to a substrate by bumps. Thereby, an intermediate gap "layer" between the SAW resonator and the substrate is defined.
  • the intermediate gap layer comprises gas at the same pressure as the
  • the substrate may be adapted in size to the SAW resonator.
  • the heating element and the electrode fingers of the SAW resonator can be placed on the surface of the chip and next to the intermediate gap layer. Accordingly, the heat exchange between the SAW resonator and the gas happens in this intermediate gap layer.
  • the intermediate gap layer can be in pressure contact with the atmosphere .
  • the thickness of the intermediate gap layer is defined by the height of the bumps. Typically, a bump is about 60 ⁇ high. If the mean free path of gas molecules is bigger than the dimensions of a chamber containing the gas, gas will be in Knudsen regime. Accordingly, thermal conduction is pressure- dependent in this case. Therefore, by reducing the size of the bumps, the thickness of the intermediate gap layer can be reduced to about 5 to 10 ⁇ which allows extending the
  • the thickness of the intermediate gap layer can be smaller than the mean free path of a gas molecule in a pressure range from 0.01 mTorr to 50 Torr.
  • the sensor arrangement is sensitive based essentially on its hydrostatic pressure sensitivity until pressure becomes high enough for convection to start thereby restoring pressure-dependant thermal conductivity .
  • the intermediate gap layer between the SAW resonator and the surface of the substrate needs to be in direct contact to the atmosphere of the environment.
  • a chip that is flip-chip mounted on a substrate can be covered by a protection layer, providing a hermetic sealing of the chip.
  • the intermediate gap layer is not in contact with the environment. Therefore, in one embodiment, the substrate can comprise a hole connecting the intermediate gap layer and the environment.
  • the protection layer provides mechanical robustness of the sensor arrangement. Alternatively, if there is no protection layer covering the chip the substrate does not necessarily comprise a hole.
  • the chip is made of Lithium niobate, of the so-called black-yellow kind. It is preferable that the resonator has a high temperature dependency of its resonance frequency. Lithium niobate shows a high temperature
  • TCF coefficient of frequency
  • the chip can be made of Lithium tantalate, showing a TCF of about 50 ppm/°K.
  • Lithium tantalate is also preferably of the black-yellow kind.
  • the high temperature sensitivity of LN- or LT-based high-frequency SAW devices allows a more precise pressure measurement with an inventive sensor arrangement compared to resistivity-based Pirani sensors .
  • the absolute sensitivity of the sensor arrangement increases linearly with the used frequency. For a one-port SAW
  • the SAW resonator frequencies up to 3 GHz are easily achievable. Although more difficult to achieve, resonance frequencies up to 8GHz have already been demonstrated.
  • the SAW resonator has a resonance frequency of 2.45 GHz, to work in the 2.4GHz ISM-band.
  • the sensor arrangement comprises means to readjust the voltage that is applied to the heating element so that the resonator has a constant temperature.
  • a certain start voltage can be applied to the heating element. Further, a desired resonance frequency of the resonator is chosen. If the measured resonance frequency is below the chosen resonance frequency, the heating voltage that is applied to the heating element is decreased. A lower temperature of the resonator infers a contraction of the resonator which equals a smaller wavelength and further a higher wave celerity. Thereby the resonance frequency is increased. Alternatively, if the measured resonance frequency is higher than the chosen resonance frequency, the heating voltage that is applied to the heating element is increased, thereby decreasing the resonance frequency of the resonator.
  • the resonance frequency of the resonator can be tuned as described above by tuning the applied heating voltage until the resonance frequency equals the chosen frequency. This also infers that the resonator and the atmosphere have a certain equilibrium temperature .
  • the sensor arrangement can comprise means to determine the applied heating voltage and means to tune the voltage that is applied to the heating element so that the resonator has a constant temperature.
  • the voltage that is needed to heat the resonator to a constant temperature depends on the amount of heat exchange between the resonator and the gas molecules of the environment, determining the applied voltage easily gives away the pressure of the
  • the sensor arrangement can comprise means to readjust the RF power that is applied to the resonator.
  • a certain start RF power can be applied to the resonator. Further, a desired resonance frequency of the resonator is chosen. If the measured
  • the resonance frequency of the resonator is below the chosen resonance frequency, the RF power that is applied to the resonator is decreased. Accordingly, the heating due to energy dissipation in the resonator is decreased and thus the resonance frequency is increased.
  • the RF power that is applied to the resonator is increased, thereby decreasing the resonance frequency of the resonator.
  • the resonance frequency of the resonator can be tuned as
  • the sensor arrangement can comprise means to determine the applied RF power and means to tune the RF power that is applied to the resonator so that the resonator has a constant temperature.
  • the RF power that is needed to heat the resonator to a constant temperature depends on the amount of heat exchange between the resonator and the gas molecules of the environment determining the applied RF power easily gives away the pressure of the environment.
  • a constant voltage is applied to the heating element.
  • the resonator can be a suspended MEMS resonator.
  • the resonator can be a MEMS ring, a MEMS fork or a suspended MEMS plate.
  • the resonance frequency of MEMS resonators is also temperature-dependent. Accordingly, the resonance frequency of the suspended heated MEMS resonator can be monitored. This allows to deduce the temperature of the resonator and further to deduce the pressure of the environment as the heat exchange between resonator and environment is pressure-dependent.
  • the heating element is a meander-shaped conducting structure.
  • the present invention concerns three methods to measure the pressure of an environment comprising an
  • the first method comprises the steps of exposing the sensor arrangement to the environment, applying an RF signal to the resonator, measuring the impedance of the resonator, and deducing the pressure of the atmosphere from the impedance of the resonator.
  • the method further comprises the step of applying a voltage to the heating element.
  • the resonator can be connected to a network analyzer.
  • the network analyzer applies RF signals at different frequencies to the resonator and monitors the impedance of the resonator for each frequency. This allows to track the resonance frequency of the resonator.
  • the second method comprises the steps of exposing the sensor arrangement to the environment, applying an RF signal to the resonator, applying a heating voltage to the heating element, measuring the impedance of the resonator, readjusting the heating voltage so that the resonator has a certain
  • the resonator can be connected to a network analyzer that allows tracking the resonance frequency as discussed above .
  • the third method comprises the steps of exposing the sensor arrangement to the environment, applying an RF signal to the resonator, measuring the impedance of the resonator,
  • the impedance can be measured by connecting the resonator to a network analyzer.
  • the network analyzer determines the impedance for RF signals with different frequencies that are applied to the resonator.
  • the pressure can be deduced based on a given parameter, like impedance at a certain frequency or heating voltage for a certain frequency, with the help of look-up tables.
  • a look-up table can give the pressure of the
  • the pressure can be deduced after measuring a certain parameter by calculation based on a model describing the temperature dependency of the resonance frequency.
  • FIG. 1 shows a sensor arrangement according to the present invention .
  • FIG. 2 shows an alternative embodiment of the sensor arrangement according to the present invention.
  • FIG. 3 shows a top view of a CSP SAW resonator.
  • FIG. 4 shows a close-up view of a one-port resonator and a heating element.
  • FIG. 1 shows the cross section of a sensor arrangement SAN according to the present invention vertical to a substrate plane.
  • the sensor arrangement SAN comprises a chip CH that is flip-chip mounted on a substrate SU.
  • the substrate SU is a multi-layer substrate.
  • the substrate SU comprises dielectric ceramic layers CL and structured metallization layers.
  • the metallization layers ML are contacted with each other by via holes VH.
  • the substrate SU further comprises contact pads CP which are placed on the surface of the substrate SU facing to the chip CH. Bumps BU are placed above the contact pads CP.
  • the contact pads CP may be provided by the top surface of the metallization of the via.
  • the chip CH comprises bumping pads BP which are on the bottom surface of the chip CH facing the substrate SU.
  • the bumping pads BP of the chip CH are contacted to the contact pads CP of the substrate SU by the bumps BU.
  • the chip CH is an SAW resonator RES and further comprises a heating element HE.
  • the electrodes of the SAW resonator RES and the heating element HE are placed on the surface of the chip CH that is facing to the substrate SU.
  • the height of the intermediate gap layer IL is defined by the height TH of the bumps BU.
  • the gas in the intermediate gap layer IL and the gas in the environment of the sensor arrangement SAN are in physical contact to each other.
  • the heating element HE heats up directly the SAW resonator RES.
  • a heat exchange between the SAW resonator RES and the gas molecules MOL happens when a gas molecule MOL collides with the SAW resonator RES. If the pressure increases, more gas molecules MOL will collide with the SAW resonator. Therefore, a pressure increase causes a temperature decrease of the SAW resonator RES.
  • a linear temperature dependency of the resonance frequency of the SAW resonator RES extends only over a certain pressure range. This is the so-called Knudsen regime. Further, at pressures near atmospheric pressure, the SAW resonator RES also shows a pressure-dependent
  • Knudsen regimes comprise conditions wherein the mean free path of a gas molecule MOL is bigger than the dimensions of the chamber in which the gas molecules MOL are placed.
  • the Knudsen regime can extend to higher pressures.
  • the Knudsen regime can extend up to pressures of 50 Torr.
  • FIG. 2 shows a sensor arrangement SAN in an alternate
  • a protective layer PL is laminated over the chip and seals to the surface of the substrate in an edge portion surrounding the chip.
  • the protective layer PL provides mechanical stability and
  • the protective layer PL isolates the intermediate gap layer IL between the chip CH and the
  • a hole HO is thus provided in the substrate SU to connect the environment and the intermediate gap layer IL.
  • the diameter of the hole HO is chosen as small as possible.
  • FIG. 3 shows a top view of a SAW resonator RES.
  • the SAW resonator RES comprises two electrodes El, E2, each having a number of electrode fingers interdigitally overlapping each other in an acoustic track.
  • the acoustic track is located as far away as possible from the bumps BU as the bumps BU are heat sinks.
  • FIG. 4 shows a more detailed presentation of the heating element HE and the SAW resonator RES.
  • Electrodes E2a and E2b are positioned opposite to electrode El and are connected to ground.
  • a meander shaped heating element HE is placed in the middle of the SAW resonator.
  • the heating element HE is a conducting structure wherein a DC voltage is applied to the heating element HE.
  • the heating element HE has two contacts which can be connected to a DC voltage source.
  • the SAW resonator RES as shown in FIG. 3 comprises areas AMC of metal coating in order to decrease the radiative energy losses. This allows for increasing thermal transfer by gas therefore enhancing the sensor sensitivity.
  • the sensor arrangement SAN can comprise two SAW resonators RES. Here, one resonator RES can be heated and the other is not heated. Two resonators RES enable a differential mode which allows measuring a pressure more precisely.
  • the chip CH has to be as thin and as small as possible to provide small thermal capacity.
  • the chip CH is preferably a chip-sized-package .
  • the chip CH is 130 ym thick.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

La présente invention concerne un agencement de capteur (SAN) pour mesurer une pression d'un environnement comprenant une atmosphère. L'agencement de capteur comprend un résonateur (RES), un élément chauffant (HE) qui est couplé thermiquement au résonateur (RES), et des moyens pour mesurer la fréquence de résonance du résonateur (RES). La présente invention porte également sur des procédés pour mesurer une pression d'un environnement comprenant une atmosphère à l'aide de cet agencement de capteur.
PCT/EP2011/051479 2011-02-02 2011-02-02 Agencement de capteur WO2012103942A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/EP2011/051479 WO2012103942A1 (fr) 2011-02-02 2011-02-02 Agencement de capteur
DE112011104825.4T DE112011104825B4 (de) 2011-02-02 2011-02-02 Sensoranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/051479 WO2012103942A1 (fr) 2011-02-02 2011-02-02 Agencement de capteur

Publications (1)

Publication Number Publication Date
WO2012103942A1 true WO2012103942A1 (fr) 2012-08-09

Family

ID=44625072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/051479 WO2012103942A1 (fr) 2011-02-02 2011-02-02 Agencement de capteur

Country Status (2)

Country Link
DE (1) DE112011104825B4 (fr)
WO (1) WO2012103942A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3012881A1 (fr) * 2013-11-06 2015-05-08 Commissariat Energie Atomique Capteur de pression a resonateur electromagnetique
CN111065902A (zh) * 2017-09-07 2020-04-24 德克萨斯仪器股份有限公司 使用量子分子旋转状态跃迁的压力感测
US11258154B2 (en) 2017-08-21 2022-02-22 Texas Instruments Incorporated Launch structures for a hermetically sealed cavity

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997012216A1 (fr) * 1995-09-26 1997-04-03 Leybold Vakuum Gmbh Mesure de pression absolue sous vide a l'aide d'un resonateur presentant un exces de temperature
US20070114889A1 (en) * 2005-11-21 2007-05-24 Honeywell International Chip level packaging for wireless surface acoustic wave sensor
EP1944595A2 (fr) 2006-12-29 2008-07-16 Alcatel Lucent Microsystème pour la mesure de pression d'un gaz
WO2008149298A1 (fr) * 2007-06-04 2008-12-11 Nxp B.V. Manomètre
US20100319184A1 (en) * 2009-06-19 2010-12-23 Senseor Method of Collective Fabrication of Calibration-Free Temperature and/or Strain Sensors by Matching of Resonators on the Basis of Resonant Frequency and Static Capacitance Criteria

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997012216A1 (fr) * 1995-09-26 1997-04-03 Leybold Vakuum Gmbh Mesure de pression absolue sous vide a l'aide d'un resonateur presentant un exces de temperature
US20070114889A1 (en) * 2005-11-21 2007-05-24 Honeywell International Chip level packaging for wireless surface acoustic wave sensor
EP1944595A2 (fr) 2006-12-29 2008-07-16 Alcatel Lucent Microsystème pour la mesure de pression d'un gaz
WO2008149298A1 (fr) * 2007-06-04 2008-12-11 Nxp B.V. Manomètre
US20100319184A1 (en) * 2009-06-19 2010-12-23 Senseor Method of Collective Fabrication of Calibration-Free Temperature and/or Strain Sensors by Matching of Resonators on the Basis of Resonant Frequency and Static Capacitance Criteria

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3012881A1 (fr) * 2013-11-06 2015-05-08 Commissariat Energie Atomique Capteur de pression a resonateur electromagnetique
EP2871457A1 (fr) 2013-11-06 2015-05-13 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Capteur de pression a resonateur electromagnetique
CN104634502A (zh) * 2013-11-06 2015-05-20 原子能和替代能源委员会 电磁共振器的压力传感器
US9677962B2 (en) 2013-11-06 2017-06-13 Commissariat à l'énergie atomique et aux énergies alternatives Electromagnetic resonator pressure sensor
US11258154B2 (en) 2017-08-21 2022-02-22 Texas Instruments Incorporated Launch structures for a hermetically sealed cavity
CN111065902A (zh) * 2017-09-07 2020-04-24 德克萨斯仪器股份有限公司 使用量子分子旋转状态跃迁的压力感测
CN111065902B (zh) * 2017-09-07 2022-02-01 德克萨斯仪器股份有限公司 使用量子分子旋转状态跃迁的压力感测

Also Published As

Publication number Publication date
DE112011104825T5 (de) 2013-10-31
DE112011104825B4 (de) 2017-05-24

Similar Documents

Publication Publication Date Title
Bjurström et al. Temperature compensation of liquid FBAR sensors
US8033190B2 (en) Process condition sensing wafer and data analysis system
US7825568B2 (en) Electro acoustic sensor for high pressure environments
TW593994B (en) Sensor usable in ultra pure and highly corrosive environments
TWI534419B (zh) 微型皮冉尼真空計
TWI527371B (zh) 壓電振動裝置之製造方法
US9134276B2 (en) Bulk acoustic wave resonator sensor
US7302864B2 (en) Torque sensor
CN107525610B (zh) 基于厚度方向激励剪切波模式的fbar微压力传感器
WO2012103942A1 (fr) Agencement de capteur
WO2009020377A2 (fr) Détecteur saw
Yen et al. Characterization of aluminum nitride Lamb wave resonators operating at 600 C for harsh environment RF applications
JP4994058B2 (ja) 圧力測定装置および圧力測定方法
Han et al. A MEMS pressure sensor based on double-ended tuning fork resonator with on-chip thermal compensation
Grousset et al. SAW pressure sensor based on single-crystal quartz layer transferred on silicon
Mirea et al. AlN-Solidly mounted resonators sustaining up to 1000° C with TCF compensation
Chiu et al. High-performance film bulk acoustic wave pressure and temperature sensors
Nagaraju et al. A fully integrated wafer-scale sub-mm 3 FBAR-based wireless mass sensor
WO2001077633A1 (fr) Capteur de contrainte a ondes acoustiques de surface
EP1944595B1 (fr) Microsystème pour la mesure de pression d'un gaz
JP2004354105A (ja) 静電容量式圧力センサ
Weld et al. Temperature measurement using surface skimming bulk waves
KR100924417B1 (ko) 고압 환경용 전자 음향 센서
Zhang et al. Thermal analysis and characterization of a high Q film bulk acoustic resonator (FBAR) as biosensers in liquids
Kim et al. Electrothermal oscillator for film-thickness monitoring

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11702040

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 1120111048254

Country of ref document: DE

Ref document number: 112011104825

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11702040

Country of ref document: EP

Kind code of ref document: A1