WO2012093180A1

WO2012093180A1 - Electronic or optoelectronic component comprising organic layers

Info

Publication number: WO2012093180A1
Application number: PCT/EP2012/050269
Authority: WO
Inventors: Martin Pfeiffer; Christian Uhrich; Wolf-Michael Gnehr
Original assignee: Heliatek Gmbh
Priority date: 2011-01-06
Filing date: 2012-01-09
Publication date: 2012-07-12
Also published as: WO2012092972A1

Abstract

The invention relates to an organic electronic or optoelectronic component on a flexible substrate (1) comprising an electrode and a counterelectrode and a layer system between the electrode and the counterelectrode, which comprises at least one organic layer, the electrode of which near the substrate comprises a layer sequence having a first layer (2) that is near the substrate and is as weakly conducting as possible, a second conducting layer (2) and a third semiconducting or conducting layer (4).

Description

description

Electronic or optoelectronic component with

organic layers

Electronic or optoelectronic component having an electrode and a counter electrode, and a layer system between said electrode and the counter electrode, the substrate-near electrode is composed of a layer system consisting of a substrate-near layer of a non ^¬ conductive or only slightly conductive material, a

Metal layer and a layer of a conductive or semiconductive material.

The research and development of organic solar cells has increased sharply, especially in the last ten years. The maximum efficiency reported so far for so-called "small molecules" is 5.7% [Jiangeng Xue, Soichi Uchida, Barry P. Rand, and Stephen R. Forrest, Appl. Phys. Lett. 85 (2004) 5757]. Among small molecules are for the purposes of the present invention non-polymeric organic,

understood monodisperse molecules in the mass range between 100 and 2000 grams / mole. This could so far for the

inorganic solar cells typical efficiencies of 10-20% are not yet achieved. Organic solar cells

But are subject to the same physical limitations as inorganic solar cells, which is why according to appropriate

Development work at least theoretically similar efficiencies are to be expected.

Organic solar cells consist of a sequence of thinner ones

Layers (which are typically each thick to Ιμπι thick) of organic materials, which are preferably vapor-deposited in vacuo or spin-coated from a solution. The Electrical contacting can be effected by metal layers, transparent conductive oxides (TCOs) and / or transparent conductive polymers (PEDOT-PSS, PANI).

A solar cell converts light energy into electrical energy. In this sense, the term "photoactive" as

Conversion of light energy into electrical energy

Understood. In contrast to inorganic solar cells, solar cells do not directly generate free charge carriers due to the light, but excitons are first formed, ie electrically neutral excitation states

(bound electron-hole pairs). Only in a second

Step these excitons into free charge carriers

separated, which then contribute to the electrical current flow.

The advantage of such organic-based devices over conventional inorganic-based devices (semiconductors such as silicon, gallium arsenide) is the sometimes extremely high optical absorption coefficients (up to 2x10 ⁵ cnf ¹ ), which allow efficient

Absorber layers of only a few nanometers thickness

produce, so that offers the opportunity to produce very thin solar cells with low material and energy costs. Further technological aspects are the

low cost, the organic used

Semiconductor materials are very inexpensive when produced in large quantities; the possibility of producing flexible large-area components on plastic films, and the almost unlimited possibilities of variation and the unlimited availability of organic chemistry.

Since no high temperatures are needed in the manufacturing process, it is possible to inexpensive organic solar cells as components both flexible and on a large scale Substrates, such as metal foil, plastic wrap or

Plastic fabric, produce. This opens new

Fields of application that remain closed to conventional solar cells. Due to the almost unlimited

Number of different organic compounds, the materials can be tailored to their particular task.

One already suggested in the literature

Possible realization of an organic solar cell consists of a pin diode [Martin Pfeiffer, "Controlled doping of organic vacuum deposited dye layers: basics and

applications ", PhD thesis TU-Dresden, 1999.] with the following layer structure:

0. carrier, substrate, 1st ground contact, mostly transparent,

2nd p-layer (s),

3rd i-layer (s)

4th n-layer (s),

5. Deck contact. Here, n or p denotes an n- or p-type doping, which leads to an increase in the density of free electrons or holes in the thermal equilibrium state. In this sense, such layers are primarily as transport layers too

understand. In contrast, the term i-layer designates an undoped layer (intrinsic layer). One or more i-layer (s) may in this case consist of layers of a material as well as a mixture of two materials (so-called interpenetrating networks). in the Unlike inorganic solar cells, however, the pairs of charge carriers in organic semiconductors are not free after absorption, but they form the mutual attraction due to the less pronounced attenuation of the mutual attraction

Quasiparticles, a so-called exciton. In order to harness the energy present in the exciton as electrical energy, this exciton must be separated into free charge carriers. Since organic solar cells do not have sufficiently high fields to separate the excitons, the exciton separation at photoactive interfaces is accomplished. The photoactive interface can be used as an organic donor-acceptor interface [C.W. Tang, Appl. Phys. Lett. 48 (1986) 183] or an interface to an inorganic semiconductor [B. O'Regan, M. Grätzel, Nature 1991, 353, 737])]. The excitons pass through diffusion to a

Such an active interface, where electrons and holes are separated from each other. This can lie between the p (n) layer and the i-layer or between two i-layers. In the built-in electric field of the solar cell, the electrons are now transported to the n-area and the holes to the p-area. The transport layers are preferably transparent or largely transparent

transparent materials with wide band gap. As wide-gap materials here materials are referred to, the absorption maximum in the wavelength range <450 nm, preferably at <400 nm.

Since the excitons are always generated by the light and still no free charge carriers, the plays

Low-recombination diffusion of excitons to the active interface plays a critical role in organic solar cells. To make a contribution to the photocurrent, must therefore in a good organic solar cell the

Exciton diffusion length the typical penetration depth of the Clearly far exceed light, so that the majority of the light can be used. Structurally and in terms of chemical purity, perfect organic crystals or

Thin films certainly fulfill this criterion. For

however, the use of monocrystalline organic materials is not possible in large scale applications and the production of multiple layers with sufficient structural perfection is still very difficult.

If the i-layer is a mixed layer, the task of absorbing light either takes on only one of the components or both. The advantage of

Mixed layers is that the generated excitons only have to travel a very short distance until they reach a

Domain boundary where they are separated. Of the

Removal of the electrons or holes is carried out separately in the respective materials. Because in the mixed layer the

Materials are in contact with each other everywhere, it is crucial in this concept that the separate charges have a long life on the respective material and from each location closed percolation paths for both types of charge to the respective contact

available. These closed percolation paths are usually realized by some phase separation in the mixed layer, i. the two components are not completely mixed, but there are (preferably crystalline) nanoparticles of one material in the mixed layer. This partial segregation is called

Phase separation called.

The thus generated free charge carriers can now be transported to the contacts. By connecting the contacts via a consumer, the electrical energy can be used. Of particular importance is that excitons, generated in the volume of the organic material can diffuse to this photoactive interface.

The low-recombination diffusion of excitons to the active interface therefore plays a critical role in organic solar cells. To make a contribution to the photocurrent, must therefore in a good organic solar cell the

Exzitonendiffusionslänge be at least the order of magnitude of the typical penetration depth of the light, so that the

Most of the light can be used. The already mentioned possible high absorption coefficients are particularly advantageous for the production of particularly thin organic solar cells.

Optoelectronic components are based on the principle

either to generate or detect electromagnetic radiation or from electromagnetic radiation

To gain electricity. Examples are ^OLEDs, organic solar cells or photodetectors.

In addition to the classic metal electrodes, various approaches to replacing these are known. In DE202007018948 thin films of carbon nanotubes are described as electrodes.

From WO2006 / 134093 are so-called DMD layers

(Dielectric-metal-dielectric) as electrodes for

electronic and optoelectronic components are known which consist of a thin conductive oxide, thereon a metal layer and a second thin conductive oxide layer. The motivation for such DMD stacks was to create a semitransparent electrode by using thinner metal layers and to minimize the material consumption on partly expensive metal. Such electrodes can each be the substrate-near electrode or the counter electrode further away from the substrate

replace, depending on which side of the device

Transparency is needed.

Problems arise with the use of flexible substrates for electronic and optoelectronic devices

Structuring the substrate-near electrode. So is the case

Laser structuring, for example, partially

underlying substrate is destroyed or the structuring is incomplete, so that it comes to leakage currents to the short circuit of the entire cell

The invention is based on the object to provide a substrate near electrode available on flexible

Substrates can be deposited and structuring without destruction of the flexible substrate allows. According to the invention, the object is achieved by an organic electronic or optoelectronic component on a flexible substrate whose substrate-near electrode consists of a layer system of several layers or comprises this layer system, the layer system comprising at least a first substrate-near layer containing a non-conductive or only slightly conductive material, a subsequent second layer comprising a conductive material and a third layer comprising a conductive or semiconductive material. In this case, the first substrate-near layer has a refractive index which is greater than the refractive index of the flexible substrate, the second conductive layer has a thickness of less than or equal to 20 nm and the third conductive or semiconductive layer has a specific one

Conductivity of at least le ^{~ 6} S / cm. Preferably, the third conductive or semiconductive layer disposed on the second layer is non-metallic. The second layer may be formed as a metal layer. According to further embodiments of the invention, at least one of the first, second or third layers may consist of the abovementioned materials, ie: the first, substrate-near layer may be formed from a non-conductive or only slightly conductive material, the second layer from a conductive material , preferably formed of a metal, and the third layer of a conductive or

be formed semiconducting material.

In the context of the invention, a flexible substrate is understood to be a substrate which ensures deformability as a result of external forces. As a result, the resulting flexible organic electronic or optoelectronic components are suitable for arrangement on curved surfaces.

Organic electronic or optoelectronic components are to be understood as meaning components which have at least one organic layer in the layer system. An organic electronic or optoelectronic device may be, among others, an organic light emitting diode (OLED), an organic solar cell (OSC), a field effect transistor (OFET) or photodetector. Particularly preferred is the application in organic solar cells. In one embodiment of the invention, the third conductive or semiconducting layer, which is arranged on the second layer, has a maximum layer thickness of 20 nm.

Preferably, the layer thickness of the first substrate near Layer selected so that the reflection of the incident or outgoing light in the desired spectral range is minimized.

If the component according to the invention is a solar cell, the layer thickness of the first becomes

Substrate layer selected so that in the area of

Absorpionss spectrum of the photoactive absorber system, the reflection is minimized.

Preferably, the layer thickness of the complete

layer sequence according to the invention chosen so that the reflection of the incident or outgoing light in the desired spectral range is minimized.

The determination of an optimal layer thickness in one

Layer system can be carried out via Bragg equation, wherein this proportional to λ / 4 or for optically thin absorber proportional K / 2 can be selected as the distance between the absorber system and electrode.

In one embodiment of the invention, the first non-conductive or only weakly conductive substrate-near layer is amorphous in order to allow a bending of the layer sequence without the formation of cracks or fractures.

In a further embodiment, the first non-conductive or only slightly conductive substrate-near layer has a sheet resistance of greater than 1000 ohms / sq, but preferably greater than 10,000 ohms / sq.

Ohm / sq describes the sheet resistance measured on a square surface, whereby the size of the square surface is irrelevant. The term ohms / sq represents a term commonly used in the art. In a further embodiment, the layer sequence between the layer electrode according to the invention close to the substrate and the counter electrode of the component according to the invention begins with a transparent, conductive layer

Conductivity greater le ^{~ 6} S / cm has. This layer is preferably a p-doped or n-doped organic layer having an optical band gap greater than 2 eV.

Preferably, the first nonconductive or only slightly conductive near subtrate layer has a higher melting point and a higher evaporation temperature than the third conductive or semiconductive layer disposed on the second layer.

In a further embodiment, the first non-conductive or only slightly conductive substrate-near layer is formed from or comprises an oxide or sulfide semiconductor.

In a further embodiment of the invention, the first non-conductive or only weakly conductive substrate-near layer is composed of a group consisting of ITO (indium tin oxide),

ZnO: Al, FTO, SnO ₂ , TiO ₂ , ZnS, IGZO (Indium Gallium Zinc Oxide), S1O _2, or a combination thereof.

In a further embodiment of the invention, the first non-conductive or only weakly conductive substrate-near layer is preferably made of or comprises an amorphous oxide semiconductor such as ITO, IGZO or a combination thereof.

In another embodiment, the third semiconductive or conductive layer is on the second layer

is disposed of an oxide or sulfide semiconductor

trained or includes this. In a further embodiment of the invention, the third conductive or semiconductive conductive layer is selected from the group consisting of ITO, ZnO: Al, FTO, SnO ₂ , TiO ₂ , ZnS, IGZO, or a combination thereof, wherein the third semiconducting conductive layer (4) preferably made of an oxide semiconductor or sulfide semiconductor having a smaller one

Evaporation temperature and melting point as the material used in the substrate-near layer, for example ZnS, M0O ₃ , V ₂ O ₅ , or a combination thereof is formed. For the first non-conductive or only weakly conductive substrate-near layer and the third semiconductive and conductive layer, which is arranged on the second layer, in principle the same materials can be used, wherein the conductivity can be adjusted by changing the composition of the material.

This is known, for example, in ITO by the change in oxygen content during deposition.

A technical advantage is given by the use of the same materials for the first non-conductive or weakly conductive substrate-near layer and the third

semiconducting and conducting layer disposed on the second layer by increasing the complexity of the

Production reduced.

However, to improve the properties of a particular device according to the invention, it may be necessary to use different materials for the first non-conductive or only weakly conductive substrate-near layer and the third semiconductive and conductive layer which is arranged on the second layer. In a further embodiment, the second layer is made a metal selected from a group consisting of Al, Ag, Au, Cr, Cu, Ti or a combination of these metals.

In a further embodiment of the invention, the layer system furthermore comprises at least one first

Adhesion promoter layer which is disposed between the first non-conductive or only slightly conductive ^¬ close to the substrate layer and the second conductive layer. Such a primer layer is particularly suitable

To allow deposition of the second conductive layer on the first layer. This is advantageous when using a second conductive layer of Ag.

In a further embodiment of the above-described

In the embodiment, the layer system comprises a second

Adhesive layer, which is arranged between the flexible substrate and the first non-conductive or weakly conductive substrate-near layer. This is advantageous, for example, if deposition of the first non-conductive or only weakly conductive substrate-near layer on the flexible substrate is only possible to a limited extent.

In a further embodiment of the invention, the second adhesion promoter layer comprises a material which is selected from a group consisting of Cr, Ti and ZnO or a combination thereof. For example, it is also possible to use doped ZnO, as well as Cr and Ti as adhesion promoter layers.

The layer sequence according to the invention allows a

laser structuring of the substrate near electrode. The first non-conductive or only slightly conductive substrate-near layer protects the substrate from destruction. The second layer and the third semiconductive or conductive layer, which is disposed on the second layer, take over the conductive

Function of the electrode. The layer electrode according to the invention offers the

Advantage of a broad process window in the

laser structuring when the melting temperature and

Evaporation temperature of the first non-conductive or weakly conductive substrate near layer is significantly lower than from the third semiconductive or conductive layer, which is arranged on the second layer.

Thus, only the second layer and the third semiconductive or conductive layer disposed thereon are removed by pulsed laser radiation, while the first non-conductive or only weakly conductive substrate-near layer is only partially or not removed.

In a further disclosed embodiment, the laser cuts have a maximum width of 200 μπι, preferably 100 μπι. The edge elevation is maintained at a maximum of 100 nm after the solution according to the invention.

With the electrode according to the invention is the production of modules on flexible substrates such as

Polymer films possible. In particular, it is possible to produce an organic solar module with integrated series connection, which is based on a laser-structured

Layer sequence based on polymer film.

The deposition of the layers of the invention

substrate near electrode via suitable

Separation method, such as i.a. about OVPD, CVD, PVD, sputtering, dip-coating, imprinting, ink-jet, sol-gel-process etc.

It is preferably an organic solar cell with pin, npin, pnip or nip single cell or tandem cell, particularly preferably using doped

Charge carrier transport layers. I denotes a intrinsic layer which is undoped or lightly doped, p is a positively doped layer and n is a negatively doped layer.

In another embodiment, between the first electron-conducting layer (n-layer) and on the

Substrate electrode still present a p-doped layer so that it is a pnip or pni structure, wherein preferably the doping is selected so high that the direct pn contact has no blocking effect, but it to low-loss recombination, preferably comes through a tunneling process.

In a further embodiment of the invention, a p-doped layer may still be present in the component between the photoactive i-layer and the electrode located on the substrate, so that it is a pip or pi structure p-doped layer has a Fermi level position which is at most 0.4 eV, but preferably less than 0.3 eV below the electron transport level of the i-layer, so that it is less lossy

Electron extraction from the i-layer in this p-layer comes.

In a further embodiment of the invention, an n-layer system is still present between the p-doped layer and the counterelectrode, so that it is a nipn or ipn structure, wherein preferably the doping is selected to be so high that the direct pn contact has no blocking effect, but it comes to low-loss recombination, preferably through a tunneling process.

In a further embodiment, an n-layer system may be present in the component between the intrinsic, photoactive layer and the counterelectrode so that it can be present is a nin- or in-structure, where the

additional n-doped layer has a Fermi level position which is at most 0.4 eV, but preferably less than 0.3 eV above the hole transport level of the i-layer, so that there is loss-poor hole extraction from the i-layer in this n-layer.

In a further embodiment of the invention, the component contains an n-layer system and / or a p-layer system, so that it is a pnipn, pnin, pipn or p-i-n structure, which in all cases is characterized

distinguish that - regardless of the type of line - the

substrate side adjacent to the photoactive i-layer

Layer has a lower thermal work function than the side facing away from the substrate adjacent to the i-layer layer, so that photogenerated electrons are preferably transported away to the substrate when no external voltage is applied to the device.

In a further embodiment of the structures described above, these are designed as organic tandem solar cells or multiple solar cells. So it may be at the

Component to act a tandem cell of a combination of nip, ni, ip, pnip, pni, pip, nipn, nin, ipn, pnipn, pnin or pipn structures, in which several independent

Combinations containing at least one i-layer stacked on top of each other (cross-combinations).

In another embodiment of the structures described above, this is a pnipnipn tandem cell

executed.

The layer sequence of the component according to the invention preferably starts with a doped charge carrier transport layer on the layer electrode according to the invention. In a further embodiment of the invention, this is

Device designed as an organic pin solar cell or organic pin tandem solar cell or pin multiple solar cell. As a tandem solar cell while a solar cell is referred to, which consists of a vertical stack of two series-connected solar cells. As a multiple solar cell while a solar cell is referred to, which consists of a vertical stack of several connected in series solar cells, with a maximum of 10 solar cells are connected in a stack. In a further embodiment of the invention, a conversion contact (pn or np) is installed on the electrodes. Possible structures are for this purpose e.g. pnip, nipn or pnipn.

In a further embodiment, the n-material system contains one or more doped wide-gap layers. The term wide-gap layers defines layers with an absorption maximum in the wavelength range <450 nm.

In a further embodiment, the p-material system contains one or more doped wide-gap layers.

In another embodiment, the organic materials are small molecules. For the purposes of the invention, the term small molecules means monomers which evaporate and thus on the substrate

can be separated.

In a further embodiment, the organic materials are at least partially polymers, but at least one photoactive i-layer is formed from small molecules.

In a further embodiment of the invention, the photoactive layer system is composed of an acceptor and a

Donator built. In another embodiment, the acceptor material is a material selected from the group of fullerenes or fullerene derivatives (preferably C60 or C70) or a PTCDI derivative (perylene-3,4,9,10-bis (dicarboximide) derivative ). In a further embodiment, the donor material is an oligomer, in particular an oligomer according to WO2006092134, DE102009021881.5, a porphyrin derivative, a pentacene derivative or a perylene derivative, such as DIP (di-indeno-perylene), DBP (Di benzo-perylene). In another embodiment, the p-

Material system a TPD derivative (triphenylamine dimer), a spiro compound such as spiropyrane, spiroxazine, MeO-TPD

(Ν, Ν, Ν ', Ν' tetrakis (4-methoxyphenyl) benzidine), di-NPB

(Ν, Ν'diphenyl-N,] NP-bis (N, N'-di (1-naphthyl) -N, N'-diphenyl- (1, 1'-biphenyl) 4, 4'-diamines), MTDATA (4, 4 ', 4 "-tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine), TNATA (4, 4', 4" -tris [N- (1-naphthyl) - N-phenyl-amino] -triphenylamine), BPAPF (9,9-bis {4- [di (p-biphenyl) aminophenyl]} fluorenes), NPAPF (9, 9-bis [4- (Ν, Ν '- bis -naphthalen-2-yl-amino) phenyl] -9H-fluorenes), spiro-TAD (2, 2 ', 7, 7' -tetrakis (diphenylamino) -

9, 9 '-spirobifluorene), PV-TPD (N, N-di 4-2, 2-diphenyl-ethen-1-yl-phenyl-N, N-di 4-methylphenyl-phenyl-benzidine), 4P-TPD

(4,4'-bis- (N, N-diphenylamino) -tetraphenyl), or an in

DE 102004014046 described p-material. In a further embodiment, the n-

Material system fullerenes such as C60, C70; NTCDA (1, 4, 5, 8-naphthalenetetracarboxylic dianhydride), NTCDI (naphthalenetetracarboxylic diimide) or PTCDI (perylene-3,4,9,10-bis (dicarboximide) In another embodiment, the p-

Material system a p-dopant, said p-dopant is selected from a group consisting of F4-TCNQ, or a p-dopant as in DE10338406, DE10347856, DE10357044, DE102004010954, DE102006053320, DE102006054524 and

DE102008051737 or a transition metal oxide (VO, WO, MoO, etc.).

In a further embodiment, the n-type material system contains an n-dopant, where this n-dopant is a TTF derivative (tetrathiafulvalene derivative) or DTT derivative (dithienothiophene), an n-dopant as described in DE10338406,

DE10347856, DE10357044, DE102004010954, DE102006053320,

DE102006054524 and DE102008051737 or Cs, Li or Mg.

In a further disclosed embodiment, the device

In a further embodiment, the organic materials used have a low melting point, preferably <100 ° C., in a semitransparent manner with a transmittance of 10-80%.

In a further embodiment, the organic materials used have a low content

Glass transition temperature, preferably <150 ° C, on.

In a further embodiment of the invention, the optical path of the incident light in the active system is increased by using light traps.

In a further embodiment, the light trap is implemented by periodically switching the component on

microstructured substrate is constructed and the homogeneous function of the device, ie a short-circuit free contact and homogeneous distribution of the electric field over the entire surface, by the use of a doped wide-gap layer is ensured. Ultrathin components have on structured substrates an increased risk of forming local short circuits, so that ultimately endangering the functionality of the entire component by such obvious inhomogeneity. This short circuit risk is reduced by the use of the doped transport layers.

In a further disclosed embodiment of the invention, the light trap is realized in that the device is constructed on a periodically microstructured substrate and the homogeneous function of the device whose short-circuit ^¬ free contact and a homogeneous distribution of elekt ^¬ cal field over the entire surface by the use of a doped wide-gap layer is ensured. That the light layer, the absorber is passed through at least twice particular ^¬ It benefits in this case, which thereby can lead to improved efficiency of the solar cell to an increased light absorption and. This can be ^¬ example as achieved in that the substrate pyramid-like structures on the surface having heights and widths in each case in the range from one to several hundred

Micrometers. Height and width can be equal or

be chosen differently. Likewise, the

Pyramids be constructed symmetrically or asymmetrically.

In a further embodiment of the invention, the light trap is realized in that a doped wide-gap layer has a smooth interface with the i-layer and a rough interface with the reflective contact. The rough one

For example, interface can be defined by a periodic

Microstructuring can be achieved. Particularly advantageous is the rough interface when they diffuse the light

which leads to an extension of the light path ^within the photoactive layer. In a further embodiment, the light trap is implemented by periodically switching the component on

microstructured substrate is constructed and a doped wide-gap layer has a smooth interface with the i-layer and a rough interface to the reflective contact.

The invention is based on some

Embodiments and associated figures will be explained in more detail. It show in

Fig. 1 shows the general structure of an inventive

component,

Fig. 2 shows the general structure of an inventive

Substrate near layer electrode, in Fig. 3 shows a further imple mentation form a

4 shows the schematic representation of a structure of an exemplary photoactive component on a

microstructured substrate, in

5 shows a SEM image of a laser-structured ITO layer and FIG

6 shows a photograph in an optical microscope of a laser-structured layer electrode according to the invention.

The embodiments are intended to describe the invention without being limited thereto. Embodiment 1

In a first embodiment, an electrode according to the invention is shown in more detail in FIG. It is on the substrate 1, which, for example, as a flexible Polymer film is designed such as a PET film, a first substrate near non-conductive or only weakly conductive layer 2, for example made of IGZO arranged. On top of this, a second layer 3, for example of Ag, is arranged. On this second layer 3, a third semiconductive or conductive layer 4, for example made of ZnS is arranged. On this third semiconductive or conductive layer 4 is a doped charge carrier transport layer 5 on the

substrate near electrode (2-4) arranged. Embodiment 2:

In a further embodiment, an electrode according to the invention is shown in Fig. 2, which on the

Substrate 1, such as a PET film is arranged. The

The electrode according to the invention comprises a first

substrate-near non-conductive or only slightly conductive layer 2, for example of ZnO: Al, a second conductive layer 3, for example made of Au, and a third semiconductive or conductive layer 4, for example, from V ₂ O ₅ .

Embodiment 3: In a further illustrated in Figure 3

Embodiment is on the substrate 1, for example a PET film, a first substrate near non-conductive or only weakly conductive layer 2, for example made of ITO, arranged. The layer system furthermore comprises a second layer 3, for example made of Cu or Ag. Between the first substrate-near non-conductive or only slightly conductive layer 2 and the second conductive layer 3, a first adhesion promoter layer 6 is arranged, which consists of Cr. The layer thickness of the adhesion promoter layer is 5 nm. The layer thickness of the Cu is 5nm. On this second

Layer 3 is a third semiconductive or conductive layer 4, for example, ZnO: Al arranged. Embodiment 4

In a further embodiment of the invention, a light trap is used in Figure 4 to extend the optical path of the incident light in the active system.

The light trap is realized by the fact that the

Component is built on a periodically microstructured substrate and the homogeneous function of the device, its short-circuit-free contacting and a homogeneous

Distribution of the electric field over the entire surface through the use of a doped wide-gap layer

is guaranteed. It is particularly advantageous that the light passes through the absorber layer at least twice, which can lead to increased light absorption and thereby to improved efficiency of the solar cell. This can be achieved, for example, as in FIG. 2, in that the substrate has pyramid-like structures on the substrate

Surface having heights (h) and widths (d) each in the range of one to several hundred micrometers. Height and width can be chosen the same or different. Likewise, the pyramids can be constructed symmetrically or asymmetrically. The width of the pyramidal structures is between Ιμπι and 200μπι. The high of

pyramidal structures can be between Ιμπι and 1mm. Designation of FIG. 4:

Ιμπι <d <200μπι

Ιμπι <h <1mm

11: substrate 12: substrate-near electrode comprising a first

Substrate-near layer of a non-conductive or weakly conductive material, followed by a second conductive layer of a metal and thereon a third layer of a conductive or

semiconducting material

13: HTL or ETL layer system (10-200nm)

14: absorber mixture layer 1 (10-200nm)

15: absorber mixture layer 2 (10 - 200nm)

16: HTL or ETL layer system (10-200nm)

17: passivation layer (lnm - 200nm)

18: electrode; e.g. ITO or metal (10 - 200nm)

19: Path of the incoming light

Embodiment 5:

In the following exemplary embodiment, a layer electrode according to the invention is compared by way of example with an electrode known from the prior art on the basis of the result after the laser structuring.

In this case, in Fig. 5 is a SEM-Aufnähme a

laser-structured ITO layer according to the prior art. The ITO layer has a layer thickness of about 100 nm. The ITO layer is arranged on a PET film as a substrate. The conductivity of a 100 nm thick ITO layer is about 50 ohms / sq.

The removal of the entire layer thickness requires higher Intensity.

As can be seen in FIG. 4, the trench edges have frequent elevations, that of a cell processed thereon

would short circuit. In contrast, FIG. 6 shows a photograph of an optical microscope of a laser-structured substrate-near electrode according to the invention. This one has

Layer sequence of approx. 35 nm ZnO: Al as layer 2, approx. 8 nm Ag as layer 3 and approx. 35 nm ZnO: Al as layer 4. The electrode according to the invention was likewise applied to a PET

Foil arranged. The conductivity of this layer electrode is about 10 ohms / sq.

It is easy to see that in the middle of one

Laser shot down to the PET was removed, but the much larger part only the layers 3 and 4 was removed. This leads to cleaner outer edges.

Embodiment 6:

In a further embodiment, this includes

Layer system of the electrode according to the invention, a PET film as a flexible substrate 1, on which a bonding agent layer 7 is disposed of Ti. On this second

Adhesive layer 7 is the first substrate near non ^¬ conductive or only slightly conductive layer 2, for example, ITO, arranged. On the first layer 2, a further adhesion promoter layer 6 is arranged, which the

Arrangement of the subsequent second conductive layer 3 made of Ag improved. On this second layer 3, in turn, a third semiconductive or conductive layer 4,

arranged for example from V ₂ Os. Reference sign list

1 substrate

2 substrate-first first non-conductive or only slightly conductive layer

3 second conductive layer

4 third semiconducting or conducting layer

5 charge carrier transport layer

6 first primer layer

7 second adhesive layer

11 substrate

12 substrate-near electrode of several layers

13 HTL or ETL coating system

14 absorber mixture layer 1

15 absorber mixture layer 2

16 HTL or ETL coating system

17 passivation layer

18 electrode

19 Path of the incoming light

Claims

claims

1. Electronic or optoelectronic component on a flexible substrate (1) with an electrode and a counter electrode and a layer system between the electrode and the counter electrode, wherein the substrate near electrode is constructed of a layer system consisting of or at least comprising a first substrate near layer (2) containing a non-conductive or only slightly conductive material, a second layer containing a conductive

Material (3) and a third layer (4) containing a conductive or semiconductive material, characterized

marked that

the first layer (2) has a refractive index which is greater than the refractive index of the flexible substrate,

- The second layer (3) has a thickness of less than or equal to 20nm, preferably less lOnm and

- That the third layer (4) has a specific conductivity greater le ^{~ 6} S / cm.

2. The component according to claim 1, characterized in that the thickness of the first layer (2) is adapted so that the reflection of the incident or outgoing light in the desired spectral range is minimized.

3. Device according to one of claims 1 or 2, characterized in that the first non-conductive or only slightly conductive layer (2) is amorphous.

4. The component according to one of claims 1 to 3, characterized in that the first non-conductive or only slightly conductive layer (2) has a sheet resistance of greater than 1000 ohms / sq, but preferably greater than 10,000 Ohms / sq.

5. The component according to one of claims 1 to 4, characterized in that the first non-conductive or only slightly conductive layer (2) has a higher melting point and a higher evaporation temperature than the third conductive or semiconductive layer (4).

6. The component according to one of claims 1 to 5, characterized in that the first non-conductive or only slightly conductive layer (2) made of an oxide or

Sulfide semiconductor is formed.

7. The component according to claim 6, characterized in that the first non-conductive or only slightly conductive layer

(2) is selected from the group consisting of ITO, ZnO: Al, FTO, SnO ₂ , TIO ₂ , ZnS, IGZO, SIO _2, or a combination thereof.

8. The component according to one of claims 1 to 7, characterized in that the third conductive or semiconducting conductive layer (4) is formed of an oxide or sulfide semiconductor.

A device according to claim 8, characterized in that said third conductive or semiconducting conductive layer (4) is selected from the group consisting of ITO, ZnO: Al, FTO, SnO ₂ , TiO ₂ , ZnS, IGZO or a combination thereof. wherein the third semiconducting conductive layer (4) is preferably made of an oxide semiconductor or a sulfide semiconductor having a lower

Evaporation temperature and melting point is formed as the material used in the first layer (2).

10. The component according to one of claims 1 to 9, characterized in that the second layer (3) consists of a metal selected from a group consisting of Al, Ag, Au, Cr, Cu, Ti or a combination of these metals.

11. The component according to one of claims 1 to 10, characterized in that the layer system further comprises at least a first adhesion promoter layer (6) which is arranged between the first layer (2) and the second layer (3).

12. The component according to claim 11, characterized in that the layer system comprises a second adhesion promoter layer (7) which is arranged between the substrate (1) and the first layer (2).

13. The component according to one of claims 11 and 12, characterized in that the primer layer comprises a material which is selected from a group consisting of Cr, Ti and ZnO or a combination thereof.

14. The component according to one of claims 1 to 13, characterized in that the component is an OLED, a

organic solar cell, an OFET or a photodetector.

15. Module of one or more components according to one of claims 1 to 14 with integrated series connection.