WO2012091253A1

WO2012091253A1 - Localized emitter solar cell and method for manufacturing same

Info

Publication number: WO2012091253A1
Application number: PCT/KR2011/007257
Authority: WO
Inventors: 이준성; 양수미; 송석현; 정상윤; 안수범; 이경원; 주상민
Original assignee: 현대중공업 주식회사
Priority date: 2010-12-31
Filing date: 2011-09-30
Publication date: 2012-07-05

Abstract

The present invention relates to a localized emitter solar cell and a method for manufacturing same, the localized emitter solar cell locally having on a light receiving region of a substrate an emitter and an electrode, and comprising: a step for preparing a first conductive substrate; a step for forming a dielectric layer on the surface of the substrate; a step for forming an antireflective film on the front surface of the substrate; a step for forming a rear surface electrode on the rear surface of the substrate; a step for locally removing the antireflective film and the dielectric layer formed on the front surface of the substrate, and forming locally on the front surface of the substrate a high-concentration doping area for a second conductive impurity; and a step for forming on top of the high-concentration doping area for the second conductive impurity a front surface electrode, the steps which enable manufacturing of the localized emitter solar cell, which minimizes the recombination rate of photo-produced minority carriers and increases the life time of the minority carriers, and forms an electrode pattern that can secure a light receiving surface of the substrate to the maximum, enhancing the efficiency of the solar cell.

Description

Localized emitter solar cell and its manufacturing method

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a localized emitter solar cell and a method of manufacturing the same, and more particularly, to a localized emitter solar cell having a emitter and an electrode locally at a light receiving site of a substrate and a method of manufacturing the same.

The solar cell is a key element of photovoltaic power generation that converts sunlight directly into electricity, and is basically a diode composed of a p-n junction.

In the process of converting sunlight into electricity by solar cells, solar light is incident on the solar cells to generate electron-hole pairs inside the solar cells, and electrons move to n layers and holes move to p layers by the electric field. Thus, photovoltaic power is generated between the pn junctions, and when a load or a system is connected to both ends of the solar cell, current flows to generate power.

On the other hand, solar cells are classified into various types according to the shape of the light absorption layer or the impurity ions, which are pn junction layers. Examples of the light absorption layer include silicon (Si). The silicon substrate type used as the light absorption layer is divided into a thin film type which forms a light absorption layer by depositing silicon in a thin film form.

Looking at the general structure of the silicon substrate type of silicon-based solar cell as an example.

As illustrated in FIG. 1, a second conductive semiconductor layer 12, which is an emitter layer, is stacked on the first conductive semiconductor layer 11, and a finger bar or the upper surface of the second conductive semiconductor layer 12 is formed. A front electrode 14 having a pattern such as a bus bar is formed and a rear electrode 15 is provided on a lower surface of the first conductive semiconductor layer 11.

In this case, the first conductive semiconductor layer 11 and the second conductive semiconductor layer 12 are implemented on one silicon substrate 10, and the lower portion of the silicon substrate 10 is the first conductive semiconductor layer 11. The upper portion of the silicon substrate 10 is divided into the second conductive semiconductor layer 12, and a lower concentration doped layer of the first conductive impurity for forming a backside electric field is formed below the first conductive semiconductor layer 11. 10-1) and the second conductive semiconductor layer 12 having the front electrode 14 formed on an upper surface thereof, are provided with a highly doped region 10-2 of the second conductive impurity.

Looking at the general manufacturing process of such a substrate-type silicon solar cell, first preparing a silicon substrate 10 of the first conductivity type, surface texturing of the prepared silicon substrate 10, doping impurity ion (Doping) of the second conductivity type The second conductive semiconductor layer 12 is formed through diffusion, and the front electrode 14 and the rear electrode 15 are formed.

Meanwhile, before the front electrode 14 and the back electrode 15 are formed, impurities including impurities such as a PSG (Phosphorus Silicate Glass) film or a BSG (Boron Silicate Glass) film formed on the surface of the substrate 10 by a diffusion process are formed. A cleaning process for removing an oxide film and a process for forming an anti-reflection film 13 on the second conductive semiconductor layer 12, and the like, to reduce contact resistance between the surface of the silicon substrate 10 and the front electrode 14. In order to form the second conductive semiconductor layer 12 corresponding to the portion where the front electrode 14 is to be formed, a highly doped region 10-2, that is, an emitter, of the second conductive impurity is selectively formed.

Here, since the highly doped layer 10-1 of the first conductivity type impurity forms a backside electric field having a higher energy barrier than the first conductivity type semiconductor layer 11, the first conductivity type semiconductor layer 11 is later formed. The small number of carriers (1) generated by the solar light incident in the inside serves to block the movement to the rear electrode (15).

In addition, after the formation of the front electrode 14 and the rear electrode 15, a high concentration doping layer 10-1 of the first conductivity type impurity is formed under the first conductivity type semiconductor layer 11 through a firing process. In addition, an insulating process of forming a trench for disconnection of a predetermined depth is performed along the circumference of the front surface of the substrate using a laser.

When the second conductive semiconductor layer 12 is formed, the silicon substrate 10 is immersed in a solution containing the second conductive impurity ions and subsequently subjected to a heat treatment process, thereby forming the second conductive impurity ions into a silicon substrate ( 10), the second conductive semiconductor layer is formed on the side of the substrate in addition to the upper portion of the silicon substrate 10. Thus, the second conductive semiconductor layer formed on the side of the substrate is the front electrode 14; Since the back electrode 15 is shorted to act as a factor of reducing photoelectric conversion efficiency of the solar cell, the front electrode 14 and the rear surface of the second conductive semiconductor layer formed on the side of the silicon substrate 10 are reduced. This is because it is necessary to interrupt the electrical connection between the electrodes 15.

Looking at the movement of the minority transporter (1) during photovoltaic power generation in such a general solar cell, for example, when the first conductivity type is p-type, the second conductivity type is n-type, as the solar light enters the first conductive semiconductor The electrons, which are the minority carriers 1 generated in the layer 11, move toward the front surface of the silicon substrate 10 on which the second conductive semiconductor layer 12, that is, the emitter layer, is formed. At this time, the hole which is the majority carrier 2 is moved toward the rear side of the silicon substrate 10.

In such a general solar cell, the impurity doping concentration in the depth direction is highest at the top and decreases toward the bottom, and accordingly, the conduction band is lowered toward the top in the energy band structure. Since the semiconductor layer 12, that is, the emitter layer, is formed on the entire light-receiving surface of the silicon substrate 10, the minority transport photogenerated in the first conductive semiconductor layer 11 by the depth energy band structure of the emitter layer. The self moves along the emitter layer, and in particular, moves along the surface of the silicon substrate 10 above the emitter layer adjacent to the anti-reflection film 13 and is collected by the front electrode 14.

However, since the surface area of the silicon substrate 10, which is the movement path of the minority transporter 1, is a high density of defects in which a large number of crystal defects and impurities exist, the minority transporter 1 has such a conventional solar cell. There is a fear that it may be easily lost by recombination before being collected by the front electrode 14.

Furthermore, in the conventional solar cell, since the front electrode 14 having a large line width W within a range of 100 µm to 140 µm must be formed on the front surface of the silicon substrate 10, that is, the light receiving surface, it is sufficient to maintain the light receiving rate. In order to secure the light receiving surface of the area, the distance d between the front electrodes 14 is very large, within 1800 μm to 2300 μm, so that the minority carriers 1 generated in the first conductive semiconductor layer 11 Since the distance to the front electrode 14 along the surface portion of the silicon substrate 10 becomes longer, the minority transporter 1 is recombined on the surface of the silicon substrate 10 before being collected by the front electrode 14. The likelihood of disappearance increases.

That is, the conventional solar cell has a problem in that the photoelectric conversion efficiency is low due to its high recombination rate of the minority transporter 1 photogenerated in the silicon substrate 10.

In addition, a conventional solar cell requires a complicated process procedure such as a cleaning process for removing an oxide film and an insulation process for forming a trench for disconnection, and thus, a manufacturing period and a manufacturing cost are high.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems described above, and provides a localized emitter solar cell having an emitter and an electrode locally at a light receiving portion of a substrate, and an object thereof.

In addition, the present invention provides a localized emitter solar cell having a secondary electrode layer for transferring a small number of carriers collected through the emitter between the emitter and the electrode to the electrode, and a method thereof.

The present invention also provides a localized emitter solar cell having a doped region of a conductive impurity having a polarity opposite to that of the emitter in a light receiving portion of the light receiving portion of the substrate except for the emitter forming region, and a method of manufacturing the same. There is a purpose.

The localized emitter solar cell according to the first embodiment of the present invention for achieving the object as described above comprises a first conductive substrate of silicon material having a front electrode and a rear electrode on the upper and lower surfaces, The highly doped region of the second conductive impurity is locally formed in the upper layer of the substrate, and the front electrode is formed in contact with the heavily doped region of the second conductive impurity.

On the other hand, the method of manufacturing a localized emitter solar cell according to the first embodiment of the present invention comprises the steps of preparing a substrate of the first conductive type; Forming a highly doped region of a second conductive impurity locally in an upper layer of the substrate; Applying a back metal material to a back side of the substrate; Applying a front metal material over the high concentration doped region of the second conductive impurity through a screen printing process; It is preferable to include the step of forming a front electrode and a back electrode on the front and rear surfaces of the substrate by the firing process.

Alternatively, the method of manufacturing a localized emitter solar cell according to the first embodiment of the present invention includes the steps of preparing a substrate of a first conductivity type; Forming a dielectric layer on the surface of the substrate; Forming an anti-reflection film on the entire surface of the substrate; Forming a rear electrode on a rear surface of the substrate; Locally removing the anti-reflection film and the dielectric layer formed on the front surface of the substrate through a laser doping method, and forming a highly doped region of the second conductive impurity locally on the front surface of the substrate; And forming a front electrode on the high concentration doped region of the second conductive impurity by performing a plating process.

In addition, the localized emitter solar cell according to the second embodiment of the present invention includes a first conductive substrate of silicon material having a front electrode and a rear electrode on the upper and lower surfaces thereof, and a second layer on the upper portion of the substrate. A high concentration doped region of a conductive impurity is locally formed, and a dielectric layer and an auxiliary electrode layer are sequentially stacked between the substrate and the front electrode.

On the other hand, the method of manufacturing a localized emitter solar cell according to a second embodiment of the present invention comprises the steps of preparing a substrate of the first conductive type; Forming a dielectric layer on the surface of the substrate; Forming a rear electrode on the lower surface of the substrate; Forming a highly doped region of a second conductive impurity locally in an upper layer of the substrate; Depositing an auxiliary electrode layer on the substrate; It is preferable to include forming a front electrode on the auxiliary electrode layer.

In addition, the localized emitter solar cell according to the third embodiment of the present invention includes a first conductive substrate made of a silicon material having a front electrode and a rear electrode on the upper and lower surfaces, and the front of the substrate A high concentration doped region of the second conductive impurity in which the electrode is formed in contact is locally formed, and a high concentration doped region of the first conductive impurity is formed in a portion of the upper portion of the substrate except for the formation region of the high concentration doped region of the second conductive impurity. A region is formed, wherein the highly doped region of the first conductive impurity is formed so as not to contact the heavily doped region of the second conductive impurities and the front electrode.

On the other hand, the method of manufacturing a localized emitter solar cell according to a third embodiment of the present invention comprises the steps of preparing a substrate of the first conductive type; Forming a highly doped region of a first conductivity type impurity locally in an upper layer of the substrate; Forming an anti-reflection film on the entire surface of the substrate; Forming a rear electrode on a rear surface of the substrate; The anti-reflection film formed on the entire surface of the substrate is locally removed through a laser doping method, and a high concentration doped region of the second conductive impurity is formed locally so as not to contact the high concentration doped region of the first conductive impurity. Making a step; It is preferable to include the step of forming a front electrode on top of the high concentration doped region of the second conductive type impurity by the plating process.

Alternatively, the method of manufacturing a localized emitter solar cell according to the third embodiment of the present invention includes the steps of preparing a substrate of a first conductivity type; Forming a heavily doped region of a first conductivity type impurity locally on an upper surface of the substrate; Forming an anti-reflection film on the entire surface of the substrate; Forming a rear electrode on a rear surface of the substrate; The anti-reflection film formed on the entire surface of the substrate is locally removed through a laser doping method, and a high concentration doped region of the second conductive impurity is formed locally so as not to contact the high concentration doped region of the first conductive impurity. Making a step; And forming a front electrode on the high concentration doped region of the second conductive impurity by performing a plating process.

In addition, the localized emitter solar cell according to the fourth embodiment of the present invention includes a first conductive substrate of silicon material having a front electrode and a rear electrode on upper and lower surfaces thereof, and a second layer formed on an upper layer of the substrate. A high concentration doped region of a conductive impurity is locally formed, and a high concentration doped region of a first conductive impurity is formed in a portion of the upper portion of the substrate except for a portion of the high concentration doped region of the second conductive impurity. It is preferable that a dielectric layer and an auxiliary electrode layer are sequentially stacked between the front electrode and the front electrode.

On the other hand, the method of manufacturing a localized emitter solar cell according to a fourth embodiment of the present invention comprises the steps of preparing a substrate of the first conductive type; Forming a heavily doped region of a first conductivity type impurity locally on the substrate; Forming a dielectric layer on the surface of the substrate; Forming a rear electrode on the lower surface of the substrate; The dielectric layer formed on the front surface of the substrate is locally removed through a laser doping method, and a locally heavily doped region of the second conductive impurity is formed on the upper layer of the substrate so as not to contact the heavily doped region of the first conductive impurity. Making a step; Depositing an auxiliary electrode layer on the substrate; It is preferable to include forming a front electrode on the auxiliary electrode layer.

Alternatively, the method of manufacturing a localized emitter solar cell according to the fourth embodiment of the present invention includes the steps of preparing a substrate of a first conductivity type; Forming a heavily doped region of a first conductivity type impurity locally on an upper surface of the substrate; Forming a dielectric layer on the surface of the substrate; Forming a rear electrode on the lower surface of the substrate; The dielectric layer formed on the front surface of the substrate is locally removed through a laser doping method, and a locally heavily doped region of the second conductive impurity is formed on the upper layer of the substrate so as not to contact the heavily doped region of the first conductive impurity. Making a step; Depositing an auxiliary electrode layer on the substrate; And forming a front electrode on the auxiliary electrode layer.

According to the localized emitter solar cell according to the present invention and a method for manufacturing the same, the emitter is electrically conductive to the light receiving site except for the emitter formation region of the light receiving site including the emitter and the electrode. By providing a doped region of a conductive impurity having a polarity opposite to the type, the recombination rate of the photogenerated minority carriers can be minimized to increase the lifetime of the minority carriers, and the line width of the electrode contacting the emitter to capture the minority carriers Since it can be reduced, there is an effect that can maximize the photoelectric conversion efficiency of the solar cell while ensuring the light receiving surface to the maximum.

In addition, according to the localized emitter solar cell and a method for manufacturing the same according to the present invention, while having a local emitter and an electrode at the light receiving portion of the substrate, a small number of carriers collected through the emitter between the emitter and the electrode By providing an auxiliary electrode layer for transferring to the electrode, regardless of the shape of the electrode pattern, such as the line width, number and spacing of the electrode, it is possible to safely deliver a small number of carriers generated in the substrate to the electrode, the electrode to be formed on the light receiving portion of the substrate It is possible to form an electrode pattern that can maximize the light receiving surface of the substrate, such as reducing the line width and number of electrodes and maximizing the distance between the electrodes, thereby maximizing the light reception rate of the solar cell, thereby increasing the efficiency of the solar cell. It can be effected.

In addition, according to the localized emitter solar cell and the manufacturing method according to the present invention, there is no need to perform the cleaning process for removing the oxide film, the insulation process for forming the trench for disconnection, etc. It can shorten and reduce the manufacturing cost.

1 is a cross-sectional view showing the structure of a typical solar cell.

Figure 2 is a cross-sectional view showing the structure of a localized emitter solar cell according to a first embodiment of the present invention.

3 is a process flowchart illustrating a method of manufacturing a localized emitter solar cell according to the first embodiment of the present invention.

4 to 10 are cross-sectional views illustrating a method of manufacturing a localized emitter solar cell according to a first embodiment of the present invention.

11 is a plan view of a localized emitter solar cell according to a second embodiment of the present invention.

12 is a cross-sectional view of the localized emitter solar cell according to AA ′ in FIG. 11.

FIG. 13 is a process flowchart illustrating a method of manufacturing a localized emitter solar cell according to a second embodiment of the present invention. FIG.

14 to 21 are cross-sectional views illustrating a method of manufacturing a localized emitter solar cell according to a second embodiment of the present invention.

22 is a cross-sectional view illustrating a structure of a localized emitter solar cell according to a third embodiment of the present invention.

FIG. 23 is a cross-sectional view showing the structure of a front electrode in FIG. 22; FIG.

24 is a process flowchart illustrating a method of manufacturing a localized emitter solar cell according to the third embodiment of the present invention.

25 to 30 are cross-sectional views illustrating a method of manufacturing a localized emitter solar cell according to a third embodiment of the present invention.

31 is a plan view of a localized emitter solar cell according to a fourth embodiment of the present invention.

32 is a cross-sectional view of the localized emitter solar cell according to AA ′ in FIG. 31.

33 is a flowchart illustrating a method of manufacturing a localized emitter solar cell according to the fourth embodiment of the present invention.

34 to 42 are cross-sectional views illustrating a method of manufacturing a localized emitter solar cell according to a fourth embodiment of the present invention.

Hereinafter, a localized emitter solar cell and a method of manufacturing the same according to a preferred embodiment of the present invention with reference to the accompanying drawings will be described in detail.

A localized emitter solar cell and a method for manufacturing the same according to the first embodiment of the present invention will be described below.

Referring to FIG. 2, the localized emitter solar cell according to the first embodiment of the present invention includes a first conductive substrate 10 made of silicon material having front and

rear electrodes

14 and 15 disposed on upper and lower surfaces thereof. Wherein a high concentration doped region 10-2 of the second conductive impurity is locally formed in the upper layer portion of the substrate 10, and the front electrode 14 has a high concentration doped region 10 of the second conductive impurity. It has a structure formed in contact with -2). Here, the first conductivity type may be n type or p type, hereinafter, the first conductive type is p type, and the second conductive type is n type.

At this time, the heavily doped region 10-2 of the second conductive type impurity forms a pn junction in the substrate 10, thereby enabling movement of a small number of phototransmitters generated by solar incidence, thereby allowing the inside of the substrate 10 to be moved. A potential difference may be generated and serves to reduce the contact resistance between the metallic front electrode 14 and the interface between the substrate 10.

The high concentration doped region 10-2 of the second conductive type impurity has a narrow spacing (for example, about 450 μm to 2300 μm) in order to reduce the moving distance of the few carriers generated in the substrate 10. If the distance between the front electrode 14 to be formed in contact with the upper surface is too narrow, there is a risk of shading loss due to the electrode, so the distance between the front electrode 14 to be formed in contact with the upper surface is reduced. It is preferable to be formed to have an appropriate width (for example, about 20 to 40 ㎛) in consideration.

In addition,

dielectric layers

20 and 21 are formed on the upper and lower surfaces of the substrate 10 except for the portion where the front electrode 14 is formed, and silicon having dielectric properties is formed on the dielectric layer 20 formed on the upper surface of the substrate 10. An anti-reflective coating (ARC) 13 composed of oxide (SiO ₂ ), aluminum oxide (AlO ₃ ), titanium oxide (TiO ₂ ), silicon nitride (Si ₃ N ₄ ), or the like is stacked. Here, the

dielectric layers

20 and 21 may serve as passivation, for example, BSG (Boron Silicate Glass). If the first conductivity type is n-type, PSG (Phosphorus Silicate Glass) is formed. Can be.

On the other hand, the lower layer portion of the substrate 10 is provided with a high concentration doping layer 10-1 of the first conductivity type impurity forming a rear electric field for blocking the rear side movement of the photo-generated minority transporter.

In addition, the front electrode 14 may be formed, for example, in a finger line pattern or the like, and may be formed on the substrate 10 so as to correspond to the formation position of the highly doped region 10-2 of the locally formed second conductive impurities. Since it is formed on the surface, it is preferably formed with a line width (W) of about 20㎛ 40㎛, the spacing (d) between the electrodes is preferably formed to be about 450㎛ 2300㎛.

That is, since the front electrode 14 according to the present invention has a line width of about 1/2 to 1/4 of the size of a general solar cell, the distance between electrodes is 1/2 of the gap between the front electrodes of a general solar cell. Even if it is narrowed to about 1/4, the light receiving surface of the same level as the light receiving surface of a general solar cell can be ensured.

Hereinafter, a method of manufacturing a localized emitter solar cell according to the first embodiment of the present invention will be described.

First, as shown in FIG. 3, a first conductive silicon substrate 10 is prepared (S100).

In step S100, a saw damage etching process of etching the substrate 10 in a chemical manner is performed in order to remove a defective portion generated as a result of the cutting process of the substrate 10. At this time, it is preferable to etch the surface of the substrate 10 by a predetermined depth using a potassium hydroxide (KOH) solution or the like as an etching solution, and then wash using DIW (Deionized Water).

In addition, after the saw damage etching (Saw Damage Etching) process, a wet texturing process or a dry texturing process using an acid or alkaline (Alkaline), etc. are performed. The surface uneven structure of the substrate 10 formed by this texturing process is not shown in the drawings for the sake of simplicity.

In the state in which the substrate 10 is prepared through the above step S100, the highly doped region 10-2 of the second conductive type impurity is locally formed on the upper layer of the substrate 10 corresponding to the portion where the front electrode 14 is to be formed. To form (S110).

In the step S110, an impurity ion implantation process or laser doping may be performed. However, in the present invention, as shown in FIGS. 4 to 5, the diffusion process using the impurity paste 5 of the second conductive type as a source is performed. Perform. In this case, the diffusion barrier may or may not be used.

That is, in the step S110 described above, as shown in FIG. 4, the second conductive type impurity paste 5 is locally patterned on the entire surface of the substrate 10, and is contained in the second conductive type impurity paste 5. As shown in FIG. 5, a high concentration doped region of a second conductive type impurity that is locally heavily doped on the upper layer of the substrate 10 may be subjected to a heat treatment process to diffuse the impurity into the substrate 10. It is preferable to form 10-2).

The highly doped region 10-2 of the second conductive impurity formed in the upper layer portion of the substrate 10 through step S110 is formed of, for example, an n ++ region, and serves to form an electric field on the entire surface of the substrate 10. In charge.

Meanwhile, as illustrated in FIG. 5, the surface of the substrate 10, ie, the front and rear surfaces, except for the portion where the second conductive type impurity paste 5 is patterned by the heat treatment during the diffusion process in step S110 described above, is illustrated in FIG. 5. The dielectric layers 20 and 21 are naturally formed (S120).

After the above step S120, as shown in FIG. 6, an antireflection film 13 is formed on the entire surface of the substrate 10 through a chemical vapor deposition process (S130).

In forming the anti-reflection film 13 in step S130, it is preferable to use a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Here, the anti-reflection film 13 may be composed of a silicon nitride film (Si ₃ N ₄ ), for example, forming the silicon nitride film through a PECVD process, discharge and activate the source gas SiH ₄ and NH ₃ in a plasma state It can be implemented through a method for producing a silicon nitride film. In addition, the anti-reflection film 13 may be made of silicon oxide (SiO ₂ ), aluminum oxide (AlO ₃ ), titanium oxide (TiO ₂ ), or the like.

After the step S130, as shown in FIG. 7 through a screen printing process, the back metal material 15-1 including aluminum (Al), silver (Ag), and the like is applied to the back of the substrate 10. As shown in FIG. 8, silver (Ag) or the like is formed on the entire surface of the substrate 10, particularly on the high concentration doped region 10-2 of the second conductive impurities formed on the upper layer of the substrate 10. After applying the front metal material 14-1, the firing process is performed to form the front electrode 14 and the rear electrode 15 on the front and rear surfaces of the substrate 10 (S140).

In the step S140 described above, the high concentration doping layer 10-1 of the first conductivity type impurity, which is made of aluminum (Al) as a source, of the metal material applied to the lower surface of the substrate 10 by the heat treatment during the firing process is performed. It forms naturally in the lower layer of (10).

By the steps S100 to S140 described above, a localized emitter solar cell as shown in FIG. 2 may be finally manufactured.

Alternatively, in a state in which the substrate 10 is prepared through the above step S100, after performing the heat treatment process to perform the above step S120, the above step S130 is performed, and then on the rear surface of the substrate 10. The back metal material 15-1 including aluminum (Al), silver (Ag), and the like is coated, and a firing process is performed to form the back electrode 15 on the back of the substrate 10. As shown in FIG. 9 through a laser doping method capable of locally doping the second conductive impurities in the upper layer of the substrate 10 while locally removing the antireflection film 13 and the dielectric layer 20 formed on the entire surface of Likewise, after forming the heavily doped region 10-2 of the second conductive type impurity locally on the entire surface of the substrate 10, the second conductive type formed on the upper layer of the substrate 10 by plating is performed. By forming the front electrode 14 on top of the highly doped region 10-2 of impurities, As also it may be produced the localized emitter solar cell as shown in Fig.

At this time, when the front electrode 14 is formed, the seed layer may be formed by only performing metal plating so as to directly contact the high concentration doped region 10-2 of the second conductivity type impurity, or lowering the specific resistance when contacting the substrate 10. After depositing the Seed Layer 14-2 so as to be in direct contact with the heavily doped region 10-2 of the second conductivity type impurity, the front electrode 14 may be formed by metal plating on the seed layer 14-2. Can be. Accordingly, as shown in FIG. 10, the front electrode 14 may include a seed layer 14-2 in a lower layer directly contacting the substrate 10.

Next, a description will be given of a localized emitter solar cell according to a second embodiment of the present invention and a manufacturing method thereof.

11 to 12, the localized emitter solar cell according to the second embodiment of the present invention is a silicon-based substrate having a first conductive type having a front electrode 14 and a rear electrode 15 at upper and lower portions thereof. And a high concentration doped region 10-2 of the second conductive impurity is locally formed in the upper layer portion of the substrate 10, and the dielectric layer 20 is formed between the substrate 10 and the front electrode 14. ) And the auxiliary electrode layer 30 are sequentially stacked. Here, the first conductivity type may be n type or p type, hereinafter, the first conductive type is p type, and the second conductive type is n type.

The highly doped region 10-2 of the second conductive type impurity is formed in a dot pattern having a regular size and spacing on the upper layer of the substrate 10 as shown in FIG. 11A, or FIG. 11. As shown in (b) of FIG. 1, the upper layer of the substrate 10 is preferably formed with a line pattern having a regular line width and spacing, but has a dot pattern having an irregular size and spacing, or an irregular line width and spacing. It may also be formed in a line pattern. That is, the heavily doped region 10-2 of the second conductive type impurity may be formed in the upper layer of the substrate 10 in various forms without restriction of the pattern form. However, the highly doped region 10-2 of the second conductive type impurity has a narrow spacing (for example, about 450 μm to 2300 μm) in order to reduce the moving distance of the photo-generated minority transporter in the substrate 10. It is preferably formed to have a suitable width (for example, about 20㎛ to 40㎛).

Meanwhile, the dielectric layer 20 is formed on a portion of the upper surface of the substrate 10 except for the exposed portion of the highly doped region 10-2 of the second conductive impurity.

The dielectric layer 20 may be formed of silicon oxide (SiO ₂ ), aluminum oxide (AlO ₃ ), titanium oxide (TiO ₂ ), silicon nitride (Si ₃ N ₄ ), or the like, and the front passivation of the substrate 10 may be performed. (Passivation) Plays a role.

Meanwhile, the auxiliary electrode layer 30 is formed by being stacked on the dielectric layer 20 so as to directly contact the heavily doped region 10-2 of the second conductive impurity.

The auxiliary electrode layer 30 is photogenerated in the substrate 10, and a few carriers collected through the high concentration doping region 10-2 of the second conductivity type impurity can move to the front electrode 14 by moving. It is composed of a material that provides a migration path, for example, it may be made of a transparent conductive oxide film (TCO).

As described above, the dielectric layer 20 and the auxiliary electrode layer 30 are each formed to have a predetermined thickness in consideration of refractive index, so that an anti-reflection film (ARC) can prevent light reflection loss of the upper surface of the substrate 10, that is, the light receiving surface. -Reflective Coating

In addition, since the front electrode 14 may trap a small number of carriers through the auxiliary electrode layer 30 stacked on the entire upper surface of the substrate 10, the second conductive type is locally formed on the upper layer of the substrate 10. Since the patterning does not have to correspond to the formation position of the highly doped region 10-2 of the impurity, the upper portion of the auxiliary electrode layer 30 does not correspond to the formation position of the highly doped region 10-2 of the second conductivity type impurity. It can be formed on the side. Of course, if necessary, the front electrode 14 may be formed on the upper surface of the auxiliary electrode layer 30 to correspond to the formation position of the highly doped region 10-2 of the second conductivity type impurity.

For example, the front electrode 14 may be formed in a pattern such as a finger line shape, wherein the front electrode 14 has a narrow line width (W) of about 20 μm to 40 μm, and between electrodes of about 1800 μm to 2300 μm. It is formed to have a distance (d) or, if necessary, is formed to exceed 2300㎛ within a range that does not exceed the light receiving surface of the substrate 10, thereby ensuring a much wider light receiving surface than the light receiving surface of a typical solar cell. have. In addition, the front electrode 14 may be formed in a direction parallel or perpendicular to the pattern of the highly doped region 10-2 of the second conductive impurity.

Hereinafter, a method of manufacturing a localized emitter solar cell according to a second embodiment of the present invention will be described.

First, as shown in FIG. 13, a first conductive silicon substrate 10 is prepared (S200).

In step S200, a saw damage etching process of etching the substrate 10 in a chemical manner is performed in order to remove a defect portion generated as a result of the cutting process of the substrate 10. At this time, it is preferable to etch the surface of the substrate 10 by a predetermined depth using a potassium hydroxide (KOH) solution or the like as an etching solution, and then wash using DIW (Deionized Water).

In the state in which the substrate 10 is prepared through the above step S200, as shown in FIG. 14, the

dielectric layers

20 and 21 are formed on the surface of the substrate 10 by performing a heat treatment process (S210).

In the step S210, the

dielectric layers

20 and 21 are made of BSG (Boron Silicate Glass) or the like. If the first conductivity type is n-type, it is preferable that the

dielectric layers

20 and 21 are made of PSG (Phosphorus Silicate Glass).

Meanwhile, in step S210, the dielectric layer 20 including the silicon nitride layer Si ₃ N ₄ is formed only on the upper surface of the substrate 10 by performing a chemical vapor deposition process such as a plasma enhanced chemical vapor deposition (PECVD) process. can do.

After the above step S210, as shown in FIG. 15, a rear metal material 15-1 including aluminum (Al), silver (Ag), and the like is applied to the rear surface of the substrate 10, and the firing process is performed. 16, the rear electrode 15 is formed on the lower surface of the substrate 10 (S220).

In the step S220, a high concentration doping layer 10-1 of the first conductive type impurity, which is made of aluminum (Al) as a source, of the metal material applied to the lower surface of the substrate 10 by the heat treatment during the firing process is performed. It is naturally formed in the lower layer of (10), wherein the dielectric layer 21 formed on the lower surface of the substrate through the above step S210 is the first conductive impurity due to the doping of the first conductive impurity sourced from aluminum (Al). It is preferably included in the high concentration doping layer (10-1).

After the step S220, as illustrated in FIG. 17, the laser doping process is performed to locally remove the dielectric layer 20 formed on the substrate 10 and to remove the dielectric layer 20. 10, a second conductive dopant is doped in the upper layer of the substrate 10, and a high concentration doped region 10-2 of the second conductive dopant is locally exposed in the upper layer of the substrate 10 (S230).

The high concentration doped region 10-2 of the second conductive impurity formed on the upper layer of the substrate 10 through step S230 may be formed of, for example, a heavy doped n ++ region, and may be formed of the substrate 10. It is responsible for forming the electric field from the front.

After the above step S230, as shown in FIG. 18, the auxiliary electrode layer 30 is deposited on the substrate 10 (S240).

The auxiliary electrode layer 30 formed on the substrate 10 through the step S240 is not only deposited on the dielectric layer 20 but also a highly doped region of the second conductive impurity locally exposed in the upper layer of the substrate 10. It is deposited to be in direct contact with (10-2).

After the above step S240, as shown in FIG. 19 by performing a screen printing process, the front electrode 14 in a pattern such as to widen the interval (d) as much as possible to secure the maximum light receiving surface on the auxiliary electrode layer (30) To form (S250).

When the front electrode 14 is formed in step S250, the front metal material including silver (Ag) is coated on the auxiliary electrode layer 30 in a desired pattern, and then the firing process is preferably performed.

Localized emitter solar cells as illustrated in FIGS. 11 to 12 may be manufactured by the above-described steps S200 to S250.

Alternatively, after the step S230 described above, as shown in FIG. 20, the seed layer 20-1, which lowers the specific resistance upon contact with the substrate 10, is formed of a high concentration doped region of the second conductive impurity. After the deposition is performed in direct contact with (10-2), as shown in FIG. 21, the auxiliary electrode layer 30 is deposited on the substrate 10, and then, the above-described step S250 is performed to perform the above-described step S250. Localized emitter solar cells as shown in FIG. 12 may be fabricated.

In this case, the auxiliary electrode layer 30 formed on the substrate 10 is also deposited on the dielectric layer 20, but the high concentration doped region 10-2 of the second conductive impurity formed locally exposed on the upper layer of the substrate 10. Is deposited to contact the plating layer 20-1.

Next, a description will be given of a localized emitter solar cell according to a third embodiment of the present invention and a manufacturing method thereof.

Referring to FIG. 22, in the localized emitter solar cell according to the third embodiment of the present invention, a first conductive substrate 10 made of silicon material having a front electrode 14 and a rear electrode 15 disposed on upper and lower surfaces thereof. In this case, a high concentration doped region 10-2 of the second conductive impurity is locally formed in the upper layer of the substrate 10, and a high concentration doped region of the second conductive impurity in the upper portion of the substrate 10 ( The highly doped region 10-3 of the first conductivity type impurity is formed in a portion other than the formation portion of 10-2). In addition, the front electrode 14 has a structure in contact with the highly doped region 10-2 of the second conductive type impurity. Here, the first conductivity type may be n type or p type, hereinafter, the first conductive type is p type, and the second conductive type is n type.

The highly doped region 10-2 of the second conductive type impurity is formed in the upper layer of the substrate 10 to form a pn junction in the substrate 10, thereby enabling the movement of the minority carriers photogenerated by solar incidence. As a result, a potential difference may be generated in the substrate 10, and the contact resistance between the metallic front electrode 14 and the interface between the substrate 10 may be reduced.

Meanwhile, the heavily doped region 10-3 of the first conductive impurity is formed on the upper layer of the substrate 10 so as not to contact the heavily doped region 10-2 of the second conductive impurity and the front electrode 14. As a result, the surface of the substrate 10 of the photogenerated minority transporter is prevented.

That is, the highly doped region 10-3 of the first conductivity type impurity may be formed on the substrate 10 so as to alternate with the heavily doped region 10-2 of the second conductivity type impurity at a predetermined interval. .

As a result, the minority carriers generated in the substrate 10 do not approach the surface of the substrate 10 by the electric field generated by the highly doped region 10-3 of the first conductivity type impurity, and the second conductive By moving the shortest distance to the high concentration doped region 10-2 of the dopant-type impurities and collecting the front electrode 14 through the high concentration doped region 10-2 of the second conductive dopant, the surface recombination rate is remarkably higher than before. Is reduced.

In addition,

dielectric layers

In addition, the front electrode 14 may be formed, for example, in a finger line pattern or the like, and may be formed on the substrate 10 so as to correspond to the formation position of the highly doped region 10-2 of the locally formed second conductive impurities. It is formed on the surface, it is formed with a line width (W) of about 20㎛ 40㎛, it is preferable that the spacing (d) between the electrodes is formed to be about 450㎛ to 2300㎛.

Since the front electrode 14 has a line width 1/2 to 1/4 of the size of a general solar cell, the spacing between electrodes is 1/2 to 1/4 in comparison with the distance between the front electrodes of a general solar cell. Even if it is narrowed enough, the light receiving surface of the same level as that of the general solar cell can be secured.

In addition, as illustrated in FIG. 23, the front electrode 14 may include a seed layer 14-2 for lowering a contact resistivity in a lower layer directly contacting the substrate 10.

Hereinafter, a method of manufacturing a localized emitter solar cell according to a third embodiment of the present invention will be described.

First, as shown in FIG. 24, a first conductive silicon substrate 10 is prepared (S300).

In step S300, a saw damage etching process of etching the substrate 10 in a chemical manner is performed in order to remove a defect portion generated as a result of the cutting process of the substrate 10. At this time, it is preferable to etch the surface of the substrate 10 by a predetermined depth using a potassium hydroxide (KOH) solution or the like as an etching solution, and then wash using DIW (Deionized Water).

In the state in which the substrate 10 is prepared through the above step S300, as shown in FIG. 25, a portion where the front electrode 14 is to be formed, that is, a highly doped region 10-2 of the second conductive impurity is formed. A high concentration doped region 10-3 of the first conductive impurity is formed by locally heavy doping the first conductive impurity on the upper portion of the substrate 10, particularly the upper layer of the substrate 10 except for the portion to be formed. (S310).

In step S310, an impurity ion implantation process, a laser doping, or a diffusion process using an impurity paste as a source may be performed. In this case, the diffusion barrier may or may not be used in the diffusion process.

The high concentration doping region 10-3 of the first conductivity type impurity formed in the upper layer portion of the substrate 10 through step S310 may be formed of, for example, a p + region. It is responsible for forming an electric field to prevent.

After the above step S310, as shown in FIG. 26, the

dielectric layers

20 and 21 are formed on the front surface, that is, the front and rear surfaces of the substrate 10 by performing a heat treatment process or a deposition process (S320).

After the above step S320, as shown in Figure 27 through a chemical vapor deposition process, to form an anti-reflection film 13 on the front surface of the substrate 10 (S330).

In forming the anti-reflection film 13 in step S330, it is preferable to use a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Here, the anti-reflection film 13 may be composed of a silicon nitride film (Si ₃ N ₄ ), for example, forming the silicon nitride film through a PECVD process, discharge and activate the source gas SiH ₄ and NH ₃ in a plasma state It can be implemented through a method for producing a silicon nitride film. In addition, the anti-reflection film 13 may be made of silicon oxide (SiO ₂ ), aluminum oxide (AlO ₃ ), titanium oxide (TiO ₂ ), or the like.

After the above step S330, a metal material including aluminum (Al), silver (Ag), and the like is coated on the rear surface of the substrate 10, and a firing process is performed, as shown in FIG. 28, as shown in FIG. 28. The rear electrode 15 is formed on the rear surface of the battery (S340).

In the step S340, the high-concentration doping layer 10-1 of the first conductive type impurity having aluminum (Al) as the source of the metal material applied to the rear surface of the substrate 10 is formed by the heat treatment during the baking process. 10, which is naturally formed in the lower layer, wherein the dielectric layer 21 formed on the lower surface of the substrate through step S310 is formed of the first conductive impurity due to the doping of the first conductive impurity. It is preferably included in the heavily doped layer 10-1.

Next to step S340, as illustrated in FIG. 29, the laser doping process is performed to locally remove the antireflection film 13 and the dielectric layer 20 formed on the substrate 10, and to simultaneously remove the antireflection film ( 13) and heavily doped the second conductive impurity on the upper layer of the substrate 10 from which the dielectric layer 20 has been removed, and thus the heavily doped region 10-2 of the second conductive impurity on the upper layer of the substrate 10. ) Is formed by locally exposing (S350).

The high concentration doped region 10-2 of the second conductive impurity formed in the upper layer of the substrate 10 through step S350 is formed to alternate with the high concentration doped region 10-3 of the first conductive impurity. Preferably, it may consist, for example, of n ++ regions.

After the above step S350, the front electrode 14 is formed to contact the high concentration doped region 10-2 of the second conductive impurity formed in the upper layer of the substrate 10 by performing the plating process (S360).

The front electrode 14 formed through the step S360 is not in contact with the high concentration doping region 10-3 of the first conductivity type impurity formed on the upper layer of the substrate 10, and the high concentration doping region 10 of the second conductivity type impurity 10 is formed. -2) is preferably formed in contact with the top.

In the step S360 described above, only the metal plating is performed to directly contact the high concentration doped region 10-2 of the second conductivity type impurity, or the seed layer 14 lowering the specific resistance upon contact with the substrate 10. -2) may be deposited to directly contact the heavily doped region 10-2 of the second conductivity type impurity, and then the front electrode 14 may be formed by metal plating on the seed layer 14-2.

Localized emitter solar cells as illustrated in FIG. 22 may be manufactured by the above-described steps S300 to S360.

Alternatively, in the state in which the substrate 10 is prepared through the above step S300, the substrate except for the region where the front electrode 14 is to be formed, that is, the region where the highly doped region 10-2 of the second conductive impurity is to be formed. By patterning a heavily doped amorphous silicon (a-Si) thin film on the upper surface of the first conductive impurity (10), the highly doped region 10-3 of the first conductive impurity on the upper surface of the substrate 10 Is formed locally, and then the steps S320 to S360 described above are performed, and as shown in FIG. 30, the heavily doped region 10-3 of the first conductive impurity is heavily doped region 10 of the second conductive impurity. -2) and a localized emitter solar cell having a structure laminated on the upper surface of the substrate 10 so as not to contact the front electrode 14 can be manufactured.

Next, a description will be given of a localized emitter solar cell and a manufacturing method according to a fourth embodiment of the present invention.

31 to 32, a localized emitter solar cell according to a fourth embodiment of the present invention is a silicon-based first conductive substrate having a front electrode 14 and a rear electrode 15 at upper and lower portions thereof. And a high concentration doping region 10-2 of the second conductive impurity is locally formed in the upper layer portion of the substrate 10, and has a high concentration doping of the second conductive impurity in the upper portion of the substrate 10. A highly doped region 10-3 of the first conductivity type impurity is formed in a portion other than the region in which the region 10-2 is formed, and the dielectric layer 20 and the auxiliary electrode layer are formed between the substrate 10 and the front electrode 14. It has a structure in which 30 is laminated one by one. Here, the first conductivity type may be n type or p type, hereinafter, the first conductive type is p type, and the second conductive type is n type.

The highly doped region 10-2 of the second conductive type impurity is formed in the upper layer of the substrate 10 to form a pn junction in the substrate 10, thereby enabling the movement of the minority carriers photogenerated by solar incidence. The potential difference can be generated inside the substrate 10.

The highly doped region 10-2 of the second conductive type impurity is formed in a dot pattern having a regular size and spacing on the upper layer of the substrate 10 as shown in FIG. 31A, or FIG. 31. As shown in (b) of FIG. 1, the upper layer of the substrate 10 is preferably formed with a line pattern having a regular line width and spacing, but has a dot pattern having an irregular size and spacing, or an irregular line width and spacing. It may also be formed in a line pattern. That is, the heavily doped region 10-2 of the second conductive type impurity may be formed in the upper layer of the substrate 10 in various forms without restriction of the pattern form. However, the highly doped region 10-2 of the second conductive type impurity has a narrow spacing (for example, about 450 μm to 2300 μm) in order to reduce the moving distance of the photo-generated minority transporter in the substrate 10. It is preferably formed to have a suitable width (for example, about 20㎛ to 40㎛).

Meanwhile, the heavily doped region 10-3 of the first conductive impurity is formed on the upper layer of the substrate 10 so as not to contact the heavily doped region 10-2 of the second conductive impurity and the auxiliary electrode layer 30. As a result, the surface of the substrate 10 of the photogenerated minority transporter is prevented.

As a result, the minority carriers generated in the substrate 10 do not approach the surface of the substrate 10 by the electric field generated by the highly doped region 10-3 of the first conductivity type impurity, and the second conductive By moving the shortest distance to the high concentration doped region 10-2 of the dopant-type impurities, the high concentration doped region 10-2 of the second conductive impurity and the auxiliary electrode layer 30 are collected by the front electrode 14, thereby allowing the In comparison, the surface recombination rate is significantly reduced.

On the other hand, the auxiliary electrode layer 30 is formed by being stacked on the dielectric layer 20 so as to contact the high concentration doped region 10-2 of the second conductivity type impurity directly or via a plating layer.

In addition, since the front electrode 14 may trap a small number of carriers through the auxiliary electrode layer 30 stacked on the substrate 10 as a whole, the second conductive type impurities locally formed on the upper layer of the substrate 10 are dared. Since the patterning does not need to correspond to the formation position of the heavily doped region 10-2, the upper surface of the auxiliary electrode layer 30 does not correspond to the formation position of the heavily doped region 10-2 of the second conductive type impurity. Can be formed on. Of course, if necessary, the front electrode 14 may be formed on the upper surface of the auxiliary electrode layer 30 to correspond to the formation position of the highly doped region 10-2 of the second conductivity type impurity.

For example, the front electrode 14 may be formed in a pattern such as a finger line shape, wherein the front electrode 14 has a narrow line width (W) of about 20 μm to 40 μm, and between electrodes of about 1800 μm to 2300 μm. It is formed to have a gap (d) or, if necessary, to have a gap (d) between the electrodes exceeding 2300㎛ within a range that does not exceed the light receiving surface of the substrate 10, compared to the light receiving surface of a typical solar cell A wider light receiving surface can be secured. In addition, the front electrode 14 may be formed in a direction parallel or perpendicular to the pattern of the highly doped region 10-2 of the second conductive impurity.

Hereinafter, a method of manufacturing a localized emitter solar cell according to a fourth embodiment of the present invention will be described.

First, as shown in FIG. 33, a first conductive silicon substrate 10 is prepared (S400).

In step S400, a saw damage etching process is performed to etch the substrate 10 in a chemical manner in order to remove a defect portion generated as a result of the cutting process of the substrate 10. At this time, it is preferable to etch the surface of the substrate 10 by a predetermined depth using a potassium hydroxide (KOH) solution or the like as an etching solution, and then wash using DIW (Deionized Water).

In the state where the substrate 10 is prepared through the above step S400, as shown in FIG. 34, the upper portion of the substrate 10 except for the region where the high concentration doped region 10-2 of the second conductivity type impurity is to be formed, In particular, the heavily doped first conductive impurities are locally formed on the upper layer of the substrate 10 to form a highly doped region 10-3 of the first conductive impurities (S410).

In step S410, an impurity ion implantation process, a laser doping, or a diffusion process using an impurity paste as a source may be performed. In this case, the diffusion barrier may or may not be used in the diffusion process.

The high concentration doping region 10-3 of the first conductivity type impurity formed in the upper layer of the substrate 10 through step S410 may be formed of, for example, a p + region. It is responsible for forming an electric field to prevent.

After the above step S410, as shown in FIG. 35 by performing a heat treatment process or a deposition process,

dielectric layers

20 and 21 are formed on the surface of the substrate 10 (S420).

In step S410, the dielectric layer 20 including the silicon nitride layer Si ₃ N ₄ may be formed only on the upper surface of the substrate 10 by performing a chemical vapor deposition process such as a plasma enhanced chemical vapor deposition (PECVD) process. have.

After the above step S410, a metal material including aluminum (Al), silver (Ag), and the like is applied to the rear surface of the substrate 10, and the firing process is performed, as shown in FIG. A rear electrode 15 is formed on the lower surface (S430).

In the step S430 described above, a high concentration doping layer 10-1 of a first conductive type impurity having aluminum (Al) as a source of the metal material applied to the lower surface of the substrate 10 is formed by heat treatment during the firing process. It is naturally formed in the lower layer of the (10), wherein the dielectric layer 21 formed on the lower surface of the substrate 10 through the step S420 is the first due to the doping of the first conductive type impurities sourced from aluminum (Al) It is preferably included in the highly doped layer 10-1 of the conductive impurity.

Next to step S430, as illustrated in FIG. 37, the laser doping process is performed to locally remove the dielectric layer 20 formed on the substrate 10 and to remove the dielectric layer 20. The second conductive impurity is heavy-doped on the upper layer of 10), and the high concentration doped region 10-2 of the second conductive impurity is locally exposed on the upper layer of the substrate 10 (S440).

The high concentration doped region 10-2 of the second conductive impurity formed in the upper layer portion of the substrate 10 through step S440 is formed to alternate with the high concentration doped region 10-3 of the first conductive impurity. Preferably, it may consist, for example, of n ++ regions.

After the above step S440, as shown in FIG. 38, the auxiliary electrode layer 30 is deposited on the substrate 10 (S450).

The auxiliary electrode layer 30 formed on the substrate 10 through the step S450 is not only deposited on the dielectric layer 20 but also a highly doped region of the second conductive impurity locally exposed on the substrate 10. It may be deposited so as to be in direct contact with (10-2).

After the above step S450, as shown in FIG. 39 by performing a screen printing process, the front electrode 14 in a pattern such as to widen the interval (d) as much as possible to secure the maximum light receiving surface on the auxiliary electrode layer (30) To form (S460).

When forming the front electrode 14 in the step S460 described above, it is preferable to apply a metal material composed of silver (Ag) or the like on the auxiliary electrode layer 30 in a desired pattern, and then proceed with the firing process.

On the other hand, as shown in FIG. 40 in step S450 described above, first, the plating layer 20-1, which lowers the specific resistance upon contact with the substrate 10, is heavily doped with the second conductive impurity. After the deposition is made in direct contact with the region 10-2, the entire auxiliary electrode layer 30 is deposited on the substrate 10, and then the above-described step S460 is performed to perform the localization emitter as shown in FIG. 41. Solar cells can be manufactured.

Alternatively, in the state in which the substrate 10 is prepared through the above-described step S400, the first conductive type is formed on the upper surface of the substrate 10 except for the portion where the high concentration doped region 10-2 of the second conductive type impurity is to be formed. By patterning the doped heavy-doped amorphous silicon (a-Si) thin film, a high concentration doped region 10-3 of the first conductivity type impurity is locally formed on the upper surface of the substrate 10, and then the step S420 As shown in FIG. 42, the heavily doped region 10-3 of the first conductivity type impurity is in contact with the heavily doped region 10-2 of the second conductivity type impurity and the auxiliary electrode layer 14. Localized emitter solar cells having a structure stacked on the upper surface of the substrate 10 may be manufactured so as not to. However, when the heat treatment process is performed when the above steps S420 to S460 are performed, heat treatment is performed at a temperature of 400 ° C. or lower to prevent damage of the amorphous silicon (a-Si) thin film patterned on the upper surface of the substrate 10. It is preferable.

The localized emitter solar cell according to the present invention and a method of manufacturing the same are not limited to the above-described embodiment and can be carried out in various modifications within the range allowed by the technical idea of the present invention.

Claims

It includes a first conductive substrate of a silicon material having a front electrode and a rear electrode on the upper and lower surfaces,

A high concentration doped region of the second conductive impurity is locally formed in the upper layer of the substrate,

The front electrode is a localized emitter solar cell, characterized in that formed in contact with the high concentration doping region of the second conductivity type impurities.
It includes a first conductive substrate of a silicon material having a front electrode and a rear electrode on the upper and lower surfaces,

A high concentration doped region of a second conductive impurity in which the front electrode is in contact with the front electrode is locally formed on the substrate.

A high concentration doped region of the first conductive impurity is formed at a portion of the upper portion of the substrate except for a portion of the high concentration doped region of the second conductive impurity,

The high concentration doped region of the first conductive impurity is formed so as not to contact the high concentration doped region of the second conductive impurities and the front electrode.
The method according to claim 1 or 2,

Dielectric layers are formed on upper and lower surfaces of the substrate except for the portion where the front electrode is formed.

An anti-reflective coating (ARC) is stacked on the dielectric layer formed on the upper surface of the substrate,

The lower layer of the substrate is a localized emitter solar cell, characterized in that provided with a high concentration doping layer of the first conductivity type impurities forming a back electric field.
The method of claim 3,

The front electrode is a localized emitter solar cell, characterized in that the seed layer is provided in the lower layer in direct contact with the substrate.
The method of claim 3,

The front electrode is formed in a pattern of a finger line, localized emitter solar cell, characterized in that formed in a line width of 20㎛ to 40㎛.
The method of claim 5,

The front electrode is a localized emitter solar cell, characterized in that formed at intervals of 450㎛ to 2300㎛.
It includes a first conductive substrate of a silicon material having a front electrode and a rear electrode on the upper and lower surfaces,

A high concentration doped region of the second conductive impurity is locally formed in the upper layer of the substrate,

A localized emitter solar cell, wherein a dielectric layer and an auxiliary electrode layer are sequentially stacked between the substrate and the front electrode.
It includes a first conductive substrate of a silicon material having a front electrode and a rear electrode on the upper and lower surfaces,

A high concentration doped region of the second conductive impurity is locally formed in the upper layer of the substrate,

A high concentration doped region of the first conductive impurity is formed in a portion of the upper portion of the substrate except for a portion of the high concentration doped region of the second conductive impurity,

A localized emitter solar cell, wherein a dielectric layer and an auxiliary electrode layer are sequentially stacked between the substrate and the front electrode.
The method according to claim 7 or 8,

The dielectric layer is

The localized emitter solar cell of claim 1, wherein the emitter is formed on a portion of the upper surface of the substrate other than a portion of a high concentration doped region of the second conductive impurity.
The method of claim 9,

The dielectric layer is

A localized emitter solar cell comprising silicon oxide, aluminum oxide, titanium oxide or silicon nitride.
The method according to claim 7 or 8,

The auxiliary electrode layer,

The localized emitter solar cell of claim 2, wherein the emitter solar cell is formed on the dielectric layer to be in direct contact with the heavily doped region of the second conductive impurity or to be in contact with the plating layer.
The method of claim 11,

The auxiliary electrode layer,

A localized emitter solar cell comprising a transparent conductive oxide film.
The method according to claim 7 or 8,

The dielectric layer and the auxiliary electrode layer,

Localized emitter solar cell, characterized in that it serves as an anti-reflective coating (ARC).
The method of claim 13,

The substrate,

A localized emitter solar cell comprising a highly doped layer of a first conductivity type impurity that forms a rear electric field in a lower layer portion.
The method according to claim 7 or 8,

The highly doped region of the second conductive impurity is

A localized emitter solar cell, characterized in that it is formed in a line pattern with regular or irregular line widths and spacing.
The method of claim 15,

The front electrode,

The localized emitter solar cell of claim 2, wherein the emitter is formed in a direction parallel to or perpendicular to the pattern of the heavily doped region of the second conductive impurity.
The method according to claim 7 or 8,

The highly doped region of the second conductive impurity is

A localized emitter solar cell, characterized in that it is formed in a dot pattern with regular or irregular size and spacing.
The method of claim 8,

The highly doped region of the first conductive type impurity is

The localized emitter solar cell of claim 2, wherein the doped region of the second conductive impurity is not in contact with the auxiliary electrode layer.
The method according to claim 2 or 8,

The highly doped region of the first conductive type impurity is

A localized emitter solar cell formed on an upper layer of the substrate to prevent movement of the substrate surface of the photogenerated minority transporter.
The method according to claim 2 or 8,

The highly doped region of the first conductive type impurity is

The localized emitter solar cell of claim 1, wherein the light emitter is formed on the upper surface of the substrate to prevent movement of the substrate surface of the photo-generated minority transporter.
The method according to claim 2 or 8,

The highly doped region of the first conductive type impurity is

A localized emitter solar cell, wherein the first conductive impurity is made of a heavily doped amorphous silicon thin film.
Preparing a substrate of a first conductivity type;

Forming a highly doped region of a second conductive impurity locally in an upper layer of the substrate;

Applying a back metal material to a back side of the substrate;

Applying a front metal material over the high concentration doped region of the second conductive impurity through a screen printing process;

And forming a front electrode and a back electrode on the front and back surfaces of the substrate by firing.
The method of claim 22,

Forming a high concentration doped region of the second conductive impurity,

A method of manufacturing a localized emitter solar cell, comprising performing a diffusion process using a second conductive impurity paste as a source.
The method of claim 23, wherein

Forming a high concentration doped region of the second conductive impurity,

Locally patterning the impurity paste of the second conductivity type on an entire surface of the substrate;

Performing a heat treatment process to diffuse the impurities contained in the second conductive type impurity paste into the substrate;

Forming a dielectric layer on a surface of the substrate except for a portion where the second conductive type impurity paste is patterned by the heat treatment process;

And forming an anti-reflection film on the entire surface of the substrate.
The method of claim 24,

Forming the front electrode and the back electrode,

And by forming a highly doped layer of a first conductive impurity sourced from aluminum (Al) as the source of the back metal material in the lower layer of the substrate by the heat treatment during the baking process. Emitter manufacturing method.
Preparing a substrate of a first conductivity type;

Forming a dielectric layer on the surface of the substrate;

Forming an anti-reflection film on the entire surface of the substrate;

Forming a rear electrode on a rear surface of the substrate;

Locally removing the anti-reflection film and the dielectric layer formed on the front surface of the substrate through a laser doping method, and forming a highly doped region of the second conductive impurity locally on the front surface of the substrate;

And forming a front electrode on the high concentration doped region of the second conductivity type impurity by plating.
The method of claim 26,

Forming the front electrode,

A localized emitter solar cell, comprising: depositing a seed layer that lowers a specific resistance so as to be in direct contact with a high concentration doped region of the second conductive impurity, and metal plating the seed layer to form a front electrode; Manufacturing method.
The method according to any one of claims 22 to 27,

In the step of preparing the substrate,

A method of manufacturing a localized emitter solar cell, characterized by performing a saw damage etching process and a texturing process.
Preparing a substrate of a first conductivity type;

Forming a dielectric layer on the surface of the substrate;

Forming a rear electrode on the lower surface of the substrate;

Forming a highly doped region of a second conductive impurity locally in an upper layer of the substrate;

Depositing an auxiliary electrode layer on the substrate;

A method of manufacturing a localized emitter solar cell, comprising: forming a front electrode on the auxiliary electrode layer.
The method of claim 29,

In the step of forming a highly doped region of the second conductivity type impurity,

Locally removing the dielectric layer formed on the substrate by performing a laser doping process, and doping the second conductive type impurity on the upper layer of the substrate from which the dielectric layer is removed, manufacturing a localized emitter solar cell Way.
Preparing a substrate of a first conductivity type;

Forming a highly doped region of a first conductivity type impurity locally in an upper layer of the substrate;

Forming an anti-reflection film on the entire surface of the substrate;

Forming a rear electrode on a rear surface of the substrate;

The anti-reflection film formed on the entire surface of the substrate is locally removed through a laser doping method, and a high concentration doped region of the second conductive impurity is formed locally so as not to contact the high concentration doped region of the first conductive impurity. Making a step;

And forming a front electrode on the high concentration doped region of the second conductivity type impurity by performing a plating process.
Preparing a substrate of a first conductivity type;

Forming a heavily doped region of a first conductivity type impurity locally on an upper surface of the substrate;

Forming an anti-reflection film on the entire surface of the substrate;

Forming a rear electrode on a rear surface of the substrate;

The anti-reflection film formed on the entire surface of the substrate is locally removed through a laser doping method, and a high concentration doped region of the second conductive impurity is formed locally so as not to contact the high concentration doped region of the first conductive impurity. Making a step;

And forming a front electrode on the high concentration doped region of the second conductivity type impurity by performing a plating process.
33. The method of claim 31 or 32,

Forming the front electrode,

And forming a front electrode so as to be in contact with an upper portion of the high concentration doped region of the second conductive impurity without contacting the high concentration doped region of the first conductive impurity.
33. The method of claim 31 or 32,

And forming a dielectric layer on the surface of the substrate.
Preparing a substrate of a first conductivity type;

Forming a heavily doped region of a first conductivity type impurity locally on the substrate;

Forming a dielectric layer on the surface of the substrate;

Forming a rear electrode on the lower surface of the substrate;

The dielectric layer formed on the front surface of the substrate is locally removed through a laser doping method, and a locally heavily doped region of the second conductive impurity is formed on the upper layer of the substrate so as not to contact the heavily doped region of the first conductive impurity. Making a step;

Depositing an auxiliary electrode layer on the substrate;

A method of manufacturing a localized emitter solar cell, comprising: forming a front electrode on the auxiliary electrode layer.
Preparing a substrate of a first conductivity type;

Forming a heavily doped region of a first conductivity type impurity locally on an upper surface of the substrate;

Forming a dielectric layer on the surface of the substrate;

Forming a rear electrode on the lower surface of the substrate;

The dielectric layer formed on the front surface of the substrate is locally removed through a laser doping method, and a locally heavily doped region of the second conductive impurity is formed on the upper layer of the substrate so as not to contact the heavily doped region of the first conductive impurity. Making a step;

Depositing an auxiliary electrode layer on the substrate;

A method of manufacturing a localized emitter solar cell, comprising: forming a front electrode on the auxiliary electrode layer.
37. The method of claim 32 or 36,

Forming a high concentration doped region of the first conductivity type impurity,

Patterning an amorphous silicon (a-Si) thin film doped with a first conductive impurity on an upper surface of the substrate except for a portion where a high concentration doped region of the second conductive impurity is to be formed. Localized emitter solar cell manufacturing method.
The method according to any one of claims 29, 31, 32, 35 and 36,

Forming the back electrode,

Applying a metal material to a rear surface of the substrate and performing a firing process;

And a high concentration doped layer of a first conductivity type impurity having a metal material applied to the rear surface of the substrate as a source by heat treatment during the firing process, is formed on the lower layer of the substrate. Emitter solar cell manufacturing method.
The method according to any one of claims 29, 30, 35 and 36,

And depositing a seed layer in direct contact with the heavily doped region of the second conductivity type impurity.