WO2012074636A1 - Stackable semiconductor chip with edge features and methods of fabricating and processing same - Google Patents
Stackable semiconductor chip with edge features and methods of fabricating and processing same Download PDFInfo
- Publication number
- WO2012074636A1 WO2012074636A1 PCT/US2011/058030 US2011058030W WO2012074636A1 WO 2012074636 A1 WO2012074636 A1 WO 2012074636A1 US 2011058030 W US2011058030 W US 2011058030W WO 2012074636 A1 WO2012074636 A1 WO 2012074636A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chip
- edge
- pad
- chips
- stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
- H10P74/273—Interconnections for measuring or testing, e.g. probe pads
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/834—Interconnections on sidewalls of chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/284—Configurations of stacked chips characterised by structural arrangements for measuring or testing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/293—Configurations of stacked chips characterised by non-galvanic coupling between the chips, e.g. capacitive coupling
- H10W90/295—Configurations of stacked chips characterised by non-galvanic coupling between the chips, e.g. capacitive coupling optical coupling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- This disclosure relates to semiconductor chips and more particularly to the fabrication and processing of a stackable semiconductor chip having edge features that facilitate or provide access to circuitry on or in the chip.
- Three-dimensional conductor chip packages comprising a stack of thin semiconductor chips are now being manufactured.
- the chips in these packages often contain controllers, memories, sensors, analog components, processors and specialty communications components as well as Micro-Electro-Mechanical Systems (MEMS) devices.
- MEMS Micro-Electro-Mechanical Systems
- Functions such as testing, trimming, bonding and tuning are typically carried out by accessing the primary surfaces of the semiconductor chips, usually a planar top surface.
- the accessing step may require bringing, for example, a probe into actual contact with a feature such as a pad or trace on the surface. This becomes complicated or impossible when the primary surfaces of the interior chips are no longer accessible as a result of having been integrated into a stack.
- a method for performing one or more functions on a semiconductor chip that is part of a stack of semiconductor chips without the necessity of contacting or otherwise addressing a top surface feature. This is achieved by providing one or more access features on a chip edge surface and, where necessary, connecting the edge feature or features to a circuit or component carried by the chip. These edge surface features remain accessible after chip stacking.
- the function which is performed may consist of one or more of testing, altering, repairing, programming, interrogating, loading and tuning as well as bonding one or more conductors into a functional relationship with a circuit or component on the chip.
- the edge feature may consist of one or more of an electrical conductor, a thermal conductor, a fuse, a resistor, a capacitor, an inductor, an optical emitter, an optical receiver, a test pad, a bond pad, a contact pin, a heat dissipation device, multiples of these and combinations of these.
- the signal conduit may consist of one or more of an electrical conductor such as a trace or a via, a heat conductor, an optical conductor, multiples of these and combinations of these.
- the method can also comprise the steps of locating the stack containing the semiconductor chip to be processed by way of an edge feature on a fixture wherein the edge feature can be addressed by a function performer and thereafter activating the function performer to address the edge feature.
- a "chip” is a physical object with top and bottom primary surfaces, and one or more peripheral edge surface, the actual number of such edge surfaces being determined by chip geometry.
- the functions of addressing and activating may involve actual physical contact between the function performer and the edge feature but it may also be carried out in a non-contacting way particularly where the edge feature associated with the peripheral edge surface is an optical device or is recessed or buried beneath a surface of material that is transparent to the output of the function performer.
- the function performer may be one or more of a test probe, a wire bonder, a laser, a programmer contact, a trimmer, a data transfer contact and/or an optical transmitter or receiver and/or multiples or combinations of these elements.
- a stackable semiconductor chip wherein the chip comprises a primary surface and has one or more devices as described above associated with it.
- This primary surface although exposed when the die which makes up the semiconductor chip is fabricated both before and after singulation, is no longer exposed once the chip has been integrated into the three-dimensional stack.
- the die is further provided with an edge feature as well as a signal conduit between the edge feature and the primary surface device and/or devices so that the edge feature can be used in a process as set forth above.
- This aspect of the invention extends to multiple chips bonded together in a stacked combination.
- a method of fabricating stackable semiconductor chips wherein the fabrication process or method results in chips which can be processed in any of various ways by access to edge surface features after the chips have been integrated into a three-dimensional stack.
- this process may involve the formation of layered integrated circuits in large two-dimensional arrays having what, after singulation, become edge features.
- the buried edge features are exposed thus to provide access to a circuit or component integrated into the chips in the primary fabrication process even though the chips are assembled into a three-dimensional package of stacked chips which eliminates access to some or all of the primary surface devices in the stack.
- FIG. 1 is a perspective view of a pair of stacked semiconductor chips loaded on a common foundation chip embodying one or more aspects of the invention
- FIG. 2 is a perspective view of an alternative arrangement of stacked semiconductor chips on a foundation chip that is fixtured for alignment with a test probe;
- FIG. 3 is a side view of still another semiconductor chip stack embodying one or more aspects of the invention.
- FIG. 4 is a partial side view of a section of a semiconductor chip illustrating various arrangements of edge surface features
- FIG. 5 is a plan view of two semiconductor chips post-singulation but before stacking
- FIG. 6 is a plan view of a singulated die or chip having few structures or pads as edge features
- FIG. 6 A is a side view of the device of FIG. 6;
- FIG. 7 is a side view of another chip stack illustrating another way to utilize edge features in the form of bonding pads
- FIG. 8 is a side view of another chip stack showing a way to perform functions thereon;
- FIG. 9 is a plan view of two singulated chips in contact with one another;
- FIG. 10 is a side view of the device of FIG. 9.
- a die or chip that is fabricated in accordance with the teachings herein includes one or more edge features that facilitate or enable testing, wiring, repair, reconfiguration, tuning or processing despite the fact that the chip or die has been incorporated into a three-dimensional stack. Also disclosed herein are systems and devices to test, wire bond or otherwise process features on the edges of chips or dice in a stacked array. Also described herein is a method of performing processes on
- FIG. 1 there is shown a pair of three-dimensional
- Chip stack 10 comprises semiconductor chips 16, 18 and 20, each of which exhibits planar top and bottom primary surfaces 22 as well as peripheral edge surfaces 24. In this case, because semiconductor chips 16, 18, 20 are essentially rectangular, they each have four peripheral edge surfaces 24. The peripheral edge surface(s) can vary from one to any number depending on geometry. Chips 16, 18, 20 are adhered to one another and to foundation chip 14 by bonding material 26 between primary surfaces 22. As hereinafter described, each of chips 16, 18, 20 is presumed to carry a device or component that is associated with or exposed to one or both of primary surfaces 22. As is apparent from an inspection of FIG. 1, some of those devices or components become inaccessible as a result of the three-dimensional stacking. [0027] Chip stack 12 comprises semiconductor chips 28, 30 and 32 also bonded to one another as well as to a primary surface of foundation chip 14 by bonding material 34.
- Chip 16 exhibits edge features, which in this case are contact pads 36 for testing or wire bonding on the surface closest to the viewer in FIG. 1 as well as alterable edge laser fuses 40. Chip 16 is also provided with a bonding pad 42 on right hand peripheral surface 24 as shown in FIG. 1 for purposes of wire bonding. A test circuit 44 is shown wire bonded to one of pads 36 on top chip 16 of stack 10. In addition, fuses 40 are shown in two different conditions; i.e., some are broken or open-circuited and others remain intact.
- Chip 18 is provided on its forward peripheral edge surface with bonding or probe contact pads 46 as well as laser alterable fuses 50, the former being shown while accessed by a probe 47 that is part of a circuit test device 48.
- foundation chip 14 has been appropriately fixtured at support 15 so as to permit pad 46 to be accurately addressed, in this case "contacted”, by the function performer, in this case circuit test device 48.
- Chip 20 is provided with electrically conductive pads 54 and fuses 60 on its foremost peripheral edge surface as well as pads 64, 66 on its right hand peripheral edge surface.
- the former are used for wire bonding purposes to create conductive interconnections between chips in stack 10 as well as between chip 20 and foundation chip 14, the latter having bonding pads 58 associated with the foremost peripheral surface along with fuses 62.
- Pads 52, 64 are shown wire bonded together, and pad 66 is shown wire bonded to a pad 68 on foundation chip 14.
- the foremost peripheral edge surface 24 of chip 28 is provided with conductive pads 70 as well as laser-alterable fuses 72.
- the foremost peripheral edge surface 24 of chip 30 is provided with conductive pads 74 and a trimmable structure 76.
- the foremost peripheral edge surface 24 of chip 32 is provided with pads 78 and a trimmable structure such as resistive film 82.
- Wire bonding between the pads of the stacked chips is achievable despite the lack of access to the primary surfaces.
- Wires such as 77, 79 can be connected between chip stacks 10, 12 as well as between two chips in a single stack 10 or 12, and wire 81 can be connected between one of pads 78 on lowermost chip 32 of chip stack 12 to a pad 80 on a primary surface of foundation chip 14.
- FIG. 1 illustrates four different kinds of edge features; namely a wire bonding or conductive pad, a probe contact pad, a fuse and a trimmable feature such as a resistive film.
- FIG. 1 illustrates the fact that the edge features may be utilized not only for testing purposes but also to create interconnections between chips in the stack as well chips in two adjacent stacks.
- Chip stack 84 comprises chips 90, 92, 94, 96, all of which are understood to carry circuit devices such as one or more of the devices described above in association with the primary surfaces, at least one of which in the case of each chip is no longer accessible by reason of the assembly of the chips into stack 84 and the application of bonding material 98 to such primary surfaces.
- Top chip 90 has edge features such as conductive pads 100 as well as a primary surface features 108 that are possible because the top primary surface and a portion of the bottom primary surface of chip 90 remain exposed.
- Chip 92 on the other hand, has only edge features, in this case in the form of pads 102, 111 that can be used for testing or wire bonding purposes as shown.
- Chip 92 also has fuses 103 as an additional edge feature.
- Chip 94 has pads 104 as edge features, such pads being used in association with probe 47 of circuit test device 48 also shown in FIG. 1.
- the assembly of FIG. 2 has been properly fixtured at support 87 so as to align pads 104 in such a way as to be addressable; i.e., in this case, contacted by probe 47 at the appropriate time when data is to be gathered and processed. Data may be gathered and processed for various purposes; e.g., for quality control or for alteration to achieve predetermined parametric goals.
- Chip 94 also has fuses as edge features.
- Chip 96 is provided with edge features in the form of fuses and pads 106, which in this case are used for wire bonding.
- FIG. 2 shows wires running between pads 106 on the peripheral edge of chip 96 and similar pads 107 on the edge of foundation chip 88 as well as at least one wire running between pads 106 on the same chip 96.
- Stack 86 of FIG. 2 is identical to stack 12 in FIG. 1 so its description is not repeated here.
- One purpose in illustrating the arrangement of FIG. 2 is to show that the invention is useful not only in stacked semiconductors packages wherein all of the chips are geometrically similar in shape and size so as to fully overlap and overlie one another but also in stack arrangements wherein the chips are of different sizes and/or shapes, thereby providing a stair step effect such that both primary and edge surface features can be utilized albeit to a lesser degree.
- Chip stack 110 comprises semiconductor chips 116, 118, which are essentially identical in size and geometry joined together by bonding material 119.
- chips 116, 118 have peripheral edge surface features, one or which is an optical transmitter 124.
- the other edge features are shown for purpose of illustration as probe, contact, or wire bonding pads as well as fuses so that the semiconductor chips can be interconnected among themselves as well as between themselves and foundation chip 114.
- Chip stack 112 comprises chips 120, 122 having edge features that in this case include an optical receiver 126 on the left peripheral edge surface of chip 120.
- Chips 116, 120 are aligned with one another in the stacked direction as well as being arranged in an adjacent position so that optical transmitter 124 is aimed essentially at optical receiver 126 for data communication therebetween. This illustrates the fact that the operative association between edge features on the same or adjacent chips may be non-contacting.
- FIG. 4 illustrates still another variation of aspects of the invention.
- FIG. 4 illustrates still another variation of aspects of the invention.
- reference numeral 128 denotes dielectric material in any one of the chips illustrated in FIGS. 1 through 3, the material having an exposed peripheral edge surface 129.
- a first edge feature in the form of a pad 130 is shown protruding above surface 129 whereas the second edge feature in the form of a pad 132 is shown flush with surface 129.
- a third edge feature in the form of a pad 134 is shown recessed relative to surface 129 but still exposed for contact or wire bonding or other processing purposes.
- a pad 136 is shown as a subsurface feature; i.e., below surface 129 but yet accessible for processing purposes by reason of the fact that dielectric material 128 is transparent to whatever function is to be performed by way of access to pad 136.
- FIG. 4 illustrates still another aspect that is common to the certain article and processing embodiments disclosed herein and that is the use of signal conduits 138 between the edge features, in this case pads 130, 132, 134, 136 and the device or devices associated with the chip that comprises dielectric material 128; i.e., the purpose of the edge surface feature is to provide access to the device associated with the chip and the outside world, and thus signal conduits 138 are used.
- the edge features may take the form of traces or other forms of electrical conductors, thermal conductors for optical conductors, etc.
- edge features are alignment marks or metrology features.
- edge features may be:
- f structures such as fuses for redundancy repair, digital repair, encoding of information, circuit reconfiguration, encoding identification parameters, implementing and security encoding, serialization, etc.;
- trim pads for altering impedance or tuning the value of a circuit element such as a resistor, capacitor, inductor, oscillator and/or other circuit elements;
- optical devices or optical interface devices such as transmitters; e.g., lasers or LEDs; and/or receivers;
- heat dissipation features such as thermally conductive pads or heat pipes.
- one stacked die may optically transmit information to another nearby die without the need for wiring as illustrated by example in FIG. 3.
- Subsurface feature or pad 136 illustrated in FIG. 4 may, for example, be a metal or phase change fuse that is embedded beneath the surface of dielectric material 128 but alterable through delivery of a laser beam.
- the wavelength of the light from the laser can be selected such that the die material is transparent to it; for example, a wavelength of 1.3 ⁇ can be used with silicon. Internal trim pads are also possible.
- Signal conduits 138 when used, may be created with vias or vertical aluminum copper or tungsten structures and may also be made with traditional lithography techniques, deep-reactive ion etching followed by refill or by laser formation followed by refill.
- FIG. 5 shows a layout of two dice 150, 152 wherein the signal conduits are metal traces 154 and the edge features are shown as cylindrical vias 156. In this case, traces 154 interconnect edge feature vias 156 to respective circuitry 158, 160 on adjacent dice 150, 152.
- Dice 150, 152 shown in FIG. 5 have not yet been singulated; i.e., they are all part of a larger array fabricated in a field of material (here, wafer 162) containing many such chips or dice of similar design.
- the solid lines illustrate where the edge surfaces of the die surfaces will lie after singulation.
- wafer 162 referred to above in connection with FIG. 5 contains dice 150, 152 and other dice to be singulated with edge features here in the form of cylindrical vias 156 that are to be exposed during singulation. Wafer 162 is then processed by sawing or laser cutting and/or a combination of sawing, cutting and/or routing to define and expose the edge features, in this case vias 156, as shown for die 150 in FIGS. 6 and 6A. Edge vias 156 are now fully exposed so as to be available for processing as described.
- singulation can be performed by straight cuts made by way of straight cuts with a traditional saw.
- a laser can be used to make non-straight cuts to expose the edge features that are flush with the cut surface.
- Non-straight singulation with a laser can also be used to rout out protruding edge features or those which are slightly recessed as shown by pad 134 in FIG. 4.
- Saw cutting followed by laser routing can also be used.
- Lasers can also be used to make slots or slices or trim lines to expose edge features.
- Another way to expose an edge feature is to perform singulation by sawing laser cuttings or scribing or braking followed by an etching that can remove dielectric material 128 surrounding the features.
- One preferred etch is a selected etch performed with a chemical such as XeF 2 that removes silicon at a much higher rate than metal features.
- edge features can be plated, passivated, soldered or reconfigured for mechanical mating. Features can be reformed and reflowed through heating, laser, chemical or mechanical alteration. Edge features can also be added with adhesives. All of these steps can be performed before or after stacking the dice.
- a die with edge features as described above can be stacked on another die or chip by picking up the die with a die-attach film already on the lower or upper surface and stacking it with or to another die in either aligned or stair step fashion as described above.
- the die-attach film is then cured by, for example, exposure to ultraviolet light.
- an adhesive may be applied to the dies without a die-attach film and cured in the stacking process.
- care must be taken during the stacking process not to obscure or damage the edge feature with, for example, bonding materials.
- Contaminating the edge feature should be avoided and any contamination should be removed using an appropriate technique, such as cleaning, polishing, etching or dissolving. Laser cleaning and debris removal may also be used.
- Dice or chips with edge features may require alignment during the stacking and bonding process such that the edge features are properly oriented. This is preferably carried out using mechanical positioning as shown in FIGS. 1 and 2 so that the dice are in the intended locations to access edge features for additional processing steps such as wire bonding, testing or laser processing. Edge features may also require alignment to facilitate electrical connections or optical communication as described above with respect to FIGS. 1-3.
- FIG. 7 illustrates another possibility in edge alignment by crimping one die
- edge connectors 176 already in place mate with edge pads 178 on lower die 172.
- This crimping process may also be carried out with bonding using either a die-attach film or adhesive.
- the electrical connections can be conductors that can be crimped together or formed using soldering or wire bonding techniques.
- Handling techniques may include such devices as mechanical grippers, vacuum grippers or temporary adhesion onto a carrier plate. Grippers can be designed to allow testing access or to contain an appropriate testing interface.
- FIG. 8 shows a single die 180 having a primary surface 182 and four edge surfaces 184. All of edge surfaces 184 have edge features.
- pads 186 are provided on the left peripheral edge surface 184 for access by probes 188 as part of test circuitry 190.
- Pads 192 are provided on another edge surface 184 for wire bonding purposes.
- Features 194 are provided on another edge surface 184 and are configured in such a way as to be repairable by a focused laser beam 196.
- optical communication devices 198, 200 are provided on another edge surface for appropriate communication with complementary optical communication devices 202, 204 on a laterally- arranged adjacent structure 206. Accordingly, multiple functions can be performed at the same time on a given die.
- Alignment may be accomplished by aligning to the physical edges of a die, aligning to features fabricated on the edges of the due, such as bonding, pads or fuses, dedicated alignment features such as targets or fiducials that are located on the edges of the dies, aligning to structures or features located on the bottom primary surfaces of the die or aligning to other or nearby collateral structures. Alignment can be verified and modified during the alignment procedure.
- Alignment may involve determining the relative location of two different dice, thereafter the relative location of die or die features may be used to facilitate proper interfacing such as wire bonding between the two dice.
- Alignment may involve using cameras or optical scans or laser scans to determine feature locations. Machine vision and vision analysis techniques can be employed. The locations of multiple dice may be determined from a single image. It may be necessary to assess and perform alignment differently on different sides of a die containing edge features. Die alignment may be optimized by assessing different sides of a die and the edge features on such dies are oriented, FIG. 8 being an example of a die with different edge features on the various peripheral edge surfaces. An optimal placement can be determined based upon the requirements of the die edges or features on the different edges.
- FIG. 9 introduces the subject of how to produce edge vias and interconnect between die features.
- Interconnect involving edge features may involve wire bonding of an edge feature to any other feature located on an edge, on a primary surface or on another nearby die circuit board, package conductor, foundation chip or test probe. Interconnect may be between features on a die that are stacked and/or laterally arranged.
- the edge features of two different dies 210, 212 can be brought into direct contact with one another.
- the edge features of dies 210, 212 located along facing edge surfaces 214, 216 have been brought into contact with one another at contact area 218.
- This contact area 218 may provide communication between two dice that are located on top of one another as well as beside one another.
- the edge features on a center die such as die 220 shown in FIG. 10 may function as vias to transmit signals around center die 220 so that lower die 222 can communicate with upper die 224 by way of vias 226 without communicating with center die 220 if that is desired.
- Testing of edge structures may occur before or after stacking. Parametric tests and functional tests can be done to verify that the dice were properly fabricated. Tests may be used to sort and distribute components into bins. Following tests, additional tuning, trimming, reconfiguration, repair, serialization or identification can be performed on edge structures.
- Testing, tuning and trimming and repairing with edge structures can be also used to determine and/or correct for changes and defects during the packaging process. For example, it may be required to tune the electrical impedance to properly mate one die to a different die. Packaging effects can be mitigated using edge tests or alterations.
- testing, trimming and tuning can be based on properties in the die that are measured before they are stacked. Testing during a die stacking may reveal that the die is cracked or has undergone irreparable damage during handling. Such a die can be removed and replaced with an undamaged substitute. Alternatively, this stack of dice can be discarded before any additional undamaged dies are added by bonding or otherwise. Testing with edge structures can also be used as part of a reliability test, a burn-in and/or during final testing of stacked dies.
- FIGS. 1 and 2 illustrate in schematic terms what is needed to perform some types of testing.
- a fixture adapted to receive dice of a certain configuration and of a predetermined edge feature type is provided. That fixture automatically aligns dice of appropriate geometry and edge configuration arrangement with function performing devices such as test probes so that the function performing devices properly address the edge features in space. Thereafter, the function performing devices can be activated; i.e., advanced into contact or into near proximity or simply turned on as necessary to produce a functional relationship with the edge feature being addressed. Data can be collected as necessary and decisions made regarding the viability, operability and/or alteration made in or to the edge feature.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Tests Of Electronic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020137016916A KR20140018854A (en) | 2010-11-30 | 2011-10-27 | Stackable semiconductor chip with edge features and methods of fabricating and processing same |
| CN2011800570885A CN103229296A (en) | 2010-11-30 | 2011-10-27 | Stackable semiconductor chip with edge features and method of fabricating and processing same |
| JP2013541999A JP2013546190A (en) | 2010-11-30 | 2011-10-27 | Stackable semiconductor chip having edge structure, and manufacturing and processing method thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/956,030 | 2010-11-30 | ||
| US12/956,030 US20120133381A1 (en) | 2010-11-30 | 2010-11-30 | Stackable semiconductor chip with edge features and methods of fabricating and processing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012074636A1 true WO2012074636A1 (en) | 2012-06-07 |
Family
ID=46126192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2011/058030 Ceased WO2012074636A1 (en) | 2010-11-30 | 2011-10-27 | Stackable semiconductor chip with edge features and methods of fabricating and processing same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120133381A1 (en) |
| JP (1) | JP2013546190A (en) |
| KR (1) | KR20140018854A (en) |
| CN (1) | CN103229296A (en) |
| TW (1) | TW201246485A (en) |
| WO (1) | WO2012074636A1 (en) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120105828A (en) * | 2011-03-16 | 2012-09-26 | 삼성전자주식회사 | Semiconductor light emitting diode chip, method of fabricating the chip and method for quality control of the chip |
| JP5973456B2 (en) * | 2011-10-20 | 2016-08-23 | パナソニック株式会社 | Semiconductor device |
| EP2769407B1 (en) | 2011-10-21 | 2017-05-10 | Santa Barbara Infrared Inc. | Techniques for tiling arrays of pixel elements |
| US9748214B2 (en) | 2011-10-21 | 2017-08-29 | Santa Barbara Infrared, Inc. | Techniques for tiling arrays of pixel elements and fabricating hybridized tiles |
| TWI483378B (en) * | 2013-01-04 | 2015-05-01 | 黃財煜 | Three-dimensional wafer stack structure |
| CN103246553B (en) * | 2013-04-09 | 2016-12-28 | 北京兆易创新科技股份有限公司 | A kind of enhancement mode Flash chip and a kind of chip packaging method |
| CN103247612B (en) | 2013-04-09 | 2015-09-23 | 北京兆易创新科技股份有限公司 | A kind of enhancement mode FLASH chip and a kind of chip packaging method |
| US9418974B2 (en) | 2014-04-29 | 2016-08-16 | Micron Technology, Inc. | Stacked semiconductor die assemblies with support members and associated systems and methods |
| US9613994B2 (en) * | 2014-07-16 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitance device in a stacked scheme and methods of forming the same |
| TWI621229B (en) * | 2015-04-27 | 2018-04-11 | 精材科技股份有限公司 | Chip package and method of manufacturing same |
| TWI600125B (en) * | 2015-05-01 | 2017-09-21 | 精材科技股份有限公司 | Chip package and method of manufacturing same |
| US10332899B2 (en) * | 2017-09-29 | 2019-06-25 | Intel Corporation | 3D package having edge-aligned die stack with direct inter-die wire connections |
| KR20200099606A (en) * | 2018-01-31 | 2020-08-24 | 파나소닉 아이피 매니지먼트 가부시키가이샤 | Manufacturing method of three-dimensional sculpture |
| US10700028B2 (en) | 2018-02-09 | 2020-06-30 | Sandisk Technologies Llc | Vertical chip interposer and method of making a chip assembly containing the vertical chip interposer |
| CN108470728B (en) * | 2018-03-13 | 2020-03-31 | 西安交通大学 | Pad structure compatible with electrical test and optical interconnection simultaneously and test method thereof |
| US10692841B2 (en) | 2018-06-27 | 2020-06-23 | Micron Technology, Inc. | Semiconductor devices having through-stack interconnects for facilitating connectivity testing |
| US10665581B1 (en) | 2019-01-23 | 2020-05-26 | Sandisk Technologies Llc | Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same |
| US10879260B2 (en) | 2019-02-28 | 2020-12-29 | Sandisk Technologies Llc | Bonded assembly of a support die and plural memory dies containing laterally shifted vertical interconnections and methods for making the same |
| US11031308B2 (en) * | 2019-05-30 | 2021-06-08 | Sandisk Technologies Llc | Connectivity detection for wafer-to-wafer alignment and bonding |
| JP2021052029A (en) * | 2019-09-20 | 2021-04-01 | キオクシア株式会社 | Semiconductor device |
| JP7400537B2 (en) | 2020-02-27 | 2023-12-19 | セイコーエプソン株式会社 | semiconductor equipment |
| JP7500994B2 (en) * | 2020-02-27 | 2024-06-18 | セイコーエプソン株式会社 | Semiconductor Device |
| US20220137120A1 (en) * | 2020-10-29 | 2022-05-05 | Mellanox Technologies, Ltd. | System and method for testing optical receivers |
| KR102876389B1 (en) * | 2021-12-27 | 2025-10-24 | 삼성전자주식회사 | printed circuit board and Semiconductor package comprising the same |
| US12216153B2 (en) * | 2022-03-21 | 2025-02-04 | Avago Technologies International Sales Pte. Limited | Semiconductor product with edge integrity detection structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6034438A (en) * | 1996-10-18 | 2000-03-07 | The Regents Of The University Of California | L-connect routing of die surface pads to the die edge for stacking in a 3D array |
| KR20010073946A (en) * | 2000-01-24 | 2001-08-03 | 윤종용 | Semiconductor device and manufacturing method of the same with dimple type side pad |
| US20070023883A1 (en) * | 2005-06-28 | 2007-02-01 | Markus Brunnbauer | Semiconductor stack block comprising semiconductor chips and methods for producing the same |
| US20080006921A1 (en) * | 2006-07-10 | 2008-01-10 | Stats Chippac Ltd. | Integrated circuit packaging system with ultra-thin die |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09191162A (en) * | 1995-12-29 | 1997-07-22 | Hewlett Packard Co <Hp> | Method and equipment for testing circuit board assembly |
| JP2000057120A (en) * | 1998-08-05 | 2000-02-25 | Nec Corp | Eeprom incorporating one-chip microcomputer |
| US6323060B1 (en) * | 1999-05-05 | 2001-11-27 | Dense-Pac Microsystems, Inc. | Stackable flex circuit IC package and method of making same |
| JP2001196529A (en) * | 2000-01-17 | 2001-07-19 | Mitsubishi Electric Corp | Semiconductor device and wiring method thereof |
| US6564115B1 (en) * | 2000-02-01 | 2003-05-13 | Texas Instruments Incorporated | Combined system, method and apparatus for wire bonding and testing |
| JP4063206B2 (en) * | 2003-12-03 | 2008-03-19 | 株式会社デンソー | Semiconductor manufacturing method |
| DE102007009878B4 (en) * | 2007-02-28 | 2008-11-27 | Qimonda Ag | Apparatus and method for performing a test of semiconductor devices with optical interface |
| US7973310B2 (en) * | 2008-07-11 | 2011-07-05 | Chipmos Technologies Inc. | Semiconductor package structure and method for manufacturing the same |
| CN101626015B (en) * | 2008-07-11 | 2011-11-30 | 南茂科技股份有限公司 | Package structure and its formation, mass production method and chip stack structure |
-
2010
- 2010-11-30 US US12/956,030 patent/US20120133381A1/en not_active Abandoned
-
2011
- 2011-10-27 KR KR1020137016916A patent/KR20140018854A/en not_active Withdrawn
- 2011-10-27 JP JP2013541999A patent/JP2013546190A/en active Pending
- 2011-10-27 CN CN2011800570885A patent/CN103229296A/en active Pending
- 2011-10-27 WO PCT/US2011/058030 patent/WO2012074636A1/en not_active Ceased
- 2011-11-29 TW TW100143784A patent/TW201246485A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6034438A (en) * | 1996-10-18 | 2000-03-07 | The Regents Of The University Of California | L-connect routing of die surface pads to the die edge for stacking in a 3D array |
| KR20010073946A (en) * | 2000-01-24 | 2001-08-03 | 윤종용 | Semiconductor device and manufacturing method of the same with dimple type side pad |
| US20070023883A1 (en) * | 2005-06-28 | 2007-02-01 | Markus Brunnbauer | Semiconductor stack block comprising semiconductor chips and methods for producing the same |
| US20080006921A1 (en) * | 2006-07-10 | 2008-01-10 | Stats Chippac Ltd. | Integrated circuit packaging system with ultra-thin die |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140018854A (en) | 2014-02-13 |
| JP2013546190A (en) | 2013-12-26 |
| US20120133381A1 (en) | 2012-05-31 |
| CN103229296A (en) | 2013-07-31 |
| TW201246485A (en) | 2012-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20120133381A1 (en) | Stackable semiconductor chip with edge features and methods of fabricating and processing same | |
| US7829438B2 (en) | Edge connect wafer level stacking | |
| US9378967B2 (en) | Method of making a stacked microelectronic package | |
| KR101533663B1 (en) | Stack packages using reconstituted wafers | |
| US9530706B2 (en) | Semiconductor devices having hybrid stacking structures and methods of fabricating the same | |
| US8043895B2 (en) | Method of fabricating stacked assembly including plurality of stacked microelectronic elements | |
| US4967146A (en) | Semiconductor chip production and testing processes | |
| US20130052760A1 (en) | Method of inspecting and manufacturing a stack chip package | |
| US3739232A (en) | Interconnected electrical circuit board assembly and method of fabrication | |
| JP6061937B2 (en) | Microelectronic package having stacked microelectronic devices and method of manufacturing the same | |
| KR20100047880A (en) | Reconstituted wafer stack packaging with after-applied pad extensions | |
| US9431321B2 (en) | Method of manufacturing a semiconductor device and semiconductor integrated circuit wafer | |
| US20110316141A1 (en) | Layered chip package and method of manufacturing same | |
| TWI473189B (en) | Method for wafer-level testing diced multi-dice stacked packages | |
| US7745234B2 (en) | Method for reclaiming semiconductor package | |
| US20040252474A1 (en) | Integrated circuit stack with lead frames |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11844227 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 2013541999 Country of ref document: JP Kind code of ref document: A |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| ENP | Entry into the national phase |
Ref document number: 20137016916 Country of ref document: KR Kind code of ref document: A |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 11844227 Country of ref document: EP Kind code of ref document: A1 |