WO2012055725A1 - Banc d'ecriture laser directe de structures mesa comportant des flancs a pentes negatives - Google Patents
Banc d'ecriture laser directe de structures mesa comportant des flancs a pentes negatives Download PDFInfo
- Publication number
- WO2012055725A1 WO2012055725A1 PCT/EP2011/068168 EP2011068168W WO2012055725A1 WO 2012055725 A1 WO2012055725 A1 WO 2012055725A1 EP 2011068168 W EP2011068168 W EP 2011068168W WO 2012055725 A1 WO2012055725 A1 WO 2012055725A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical beam
- layers
- plane
- photosensitive
- bench
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/44—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using single radiation source per colour, e.g. lighting beams or shutter arrangements
- B41J2/442—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using single radiation source per colour, e.g. lighting beams or shutter arrangements using lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/465—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using masks, e.g. light-switching masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Definitions
- Direct laser writing bench of MESA structures with slopes with negative slopes The field of the invention is that of maskless photolithography that more precisely implements direct laser-patterning of photosensitive materials.
- the device and the method according to the invention can, for example, be used for producing electronic or optoelectronic components.
- the device and method according to the invention find a direct application in the field of microelectronics to achieve in particular a method known as the Anglo-Saxon "lift-off” or “detachment” in French.
- This technique is a well-known method in the field of microelectronics. It makes it possible to structure a thin film deposited on a substrate without having to etch the material or materials constituting the film.
- This technique is called “additive” as opposed to “subtractive” because it does not include a step of direct etching of the materials constituting the film.
- This technique is particularly useful for the structuring of metal layers whose etching solutions are sometimes complex and / or incompatible with the materials in the presence.
- the "lift-off” consists in forming on a substrate by means of a "stencil” layer the inverse image of the pattern to be produced.
- This stencil layer covers certain areas of the substrate and reveals others.
- the film to be structured is then deposited over the "stencil” layer.
- the stencil layer is dissolved in a liquid.
- the dissolution of the stencil layer causes the detachment of the film deposited on its surface.
- the key point of the lift-off lies in the profile of the edges of the stencil layer. These edges must imperatively be inclined so as to create a break in the deposited film to allow the dissolution of the stencil layer.
- the main disadvantage is the difficulty in creating the adapted stencil.
- the stencil layer may consist of:
- Figure 1 illustrates the technique of the "lift-off" carried out with a negative photoresist, that is to say that the insolated part is dissolved during development and during insolation mask.
- This technique comprises five main steps denoted A, B, C, D and E in FIG. 1.
- Step A consists in depositing a layer of resin 2 on a substrate 1.
- Step B consists in depositing a mask 3 and in insolvent the resin 2, the masked parts not being insolated.
- Step C consists of dissolving or developing the masked portions 4.
- Step D consists in uniformly depositing the film 5 to be structured.
- step E the resin 2 is dissolved.
- the film 6 remains at the mask locations.
- the company Heidelberg has developed a direct laser writing equipment which comprises a deflection system of the laser beam associated with a device moving the substrate under the beam.
- the method of writing developed by Heidelberg is called “scanning” and consists in traversing the complete surface of the substrate whatever the structuring to be performed.
- the depth of the system field developed by Heidelberg is limited by the deflection system.
- the beam is fixed, it is shaped to have a great depth of field
- the writing method is called vector, that is to say that the laser beam moves only in places to structure.
- FIG. 2 represents a general view of a photolithography bench by direct laser writing, similar to those developed by the company KLOE.
- the direct laser direct photolithography method consists in structuring a thin photosensitive layer by means of a focused laser beam moving above the layer. In this approach, only the areas to write are traversed by the laser beam, this writing mode is called "vector". In this type of equipment, it is important, to achieve very fine engravings, that the writing laser beam is focused on the photosensitive layers with a very small spot size, close to one micron and that this beam has a large depth of field, that is to say a slight divergence around the pinching area of the laser.
- the writing bench 10 essentially comprises two main parts:
- This optical part consists of a UV laser source 20 emitting a beam F in the ultraviolet, a device for shaping the beam 21 and 22 and a focusing device 23 of the beam F This optical chain is fixed and finally makes it possible to obtain a laser spot whose size is of a size close to that of the microstructures to be produced.
- FIG. 3 schematically represents the focusing of the beam F by the focusing device 23 on the substrate 1, via a single lens;
- This mechanical part consists of translation plates 30 which move the sample or the substrate 1 under the laser beam in both directions of a plane substantially perpendicular to the laser beam.
- the writing bench also comprises control means which are:
- means for managing the power of the UV laser source consist of a separator cube 24 and a photodetector 25;
- control camera 41 which makes it possible to produce an image in the visible range of the substrate being written through the dichroic plate 26.
- the assembly is controlled by a computer 40 which manages the UV source, the ignition and extinction of the writing beam and coordinates the displacement of the translation plates.
- the objective of the optical portion is to provide a focused laser beam having the lowest possible intensity profile to generate a uniform illumination associated with a large depth of field.
- the laser source 20 is the optical element most upstream in the assembly, its characteristics are decisive for the writing quality and play on the optical processing chain required. This source must have the following characteristics:
- the beam shaping device is necessary to obtain a small circular spot at focus of the focusing lens 23.
- a possible arrangement is to perform spatial filtering by means of a circular aperture 22 diffracting the light. This circular opening effects the truncation of the incident beam and makes it possible to obtain a constant intensity profile at the focusing point. This produces light beams whose energy distribution is substantially constant.
- the size of the light spot at the focal point can be changed by simply changing the size of the calibrated aperture 22 without changing the focus lens.
- the loss in light intensity at the passage of the diffraction hole is considerable, the hole allowing only one percent of the incident energy to pass.
- a prefocus lens 21 can be positioned to concentrate the beam at the passage of the diffraction hole 22.
- the device according to the invention makes it possible to simply create "cap” shaped layer profiles without profoundly modifying the existing benches.
- the subject of the invention is a direct laser writing bench intended to produce mesa structures with an inverted slope on a substrate.
- the invention also relates to the use of such a bench for the production of electronic components by the technique known as "lift-off" on a planar substrate comprising one or more photosensitive flat layers.
- the subject of the invention is a direct laser writing bench intended to produce mesa type structures, said bench comprising at least:
- the optical beam from the writing laser being radially symmetrical
- the bench comprises optical or mechanical means arranged so that the useful portion of the optical beam is inclined at the level of the plane of the photosensitive layers in order to create in said layers inverted slope, the useful part of the optical beam being the part of the optical beam that actually contributes to create said profiles.
- the writing laser comes from a short wavelength laser source emitting in the UV, in order to obtain a focused beam allowing the realization of micrometric size patterns.
- the lasers envisaged there are in particular laser diodes, gas lasers and solid-state lasers.
- focusing optics may be, for example, a microscope focusing optics. It may have variable focus. It is thus possible to adjust the inclination of the flanks formed in the resin.
- the optical or mechanical shutter means may be chosen from an opaque thin straight edge plate or an apodization plate, the absorption filters, the reflection filters, the interference filters, the neutral filters and the polarizing filters.
- the invention also relates to the use of a bench as defined above for producing inclined slopes in a resin.
- the invention relates to the use of a bench as defined above for carrying out a step of a photolithographic process, in particular a "lift-off" step.
- the invention then consists of a method of direct laser writing on a substrate coated with a resin consisting of:
- the optical axis of the focusing optics is perpendicular to the plane of the photosensitive layers and the bench comprises means for partially occluding the optical beam located in the vicinity of the focusing optics.
- the sealing means are either an opaque thin thin straight edge plate or an apodization plate for generating at the level of the plane of the photosensitive planar layers an optical beam such that the useful portion of the optical beam is inclined at the plane of the plane. photosensitive layers without diffraction fringes.
- the closure means are mounted on at least one platen adjustable in translation and / or in rotation.
- the optical beam is radially symmetrical up to the level of the plane of the photosensitive flat layers, the optical axis of the focusing optics being perpendicular to the plane of the photosensitive layers, the optical beam being defocused at the plane flat photosensitive layers.
- the focusing optics introduces spherical aberration onto the optical beam so that the spherical aberration caustic at the plane of the photosensitive planar layers has more energy at the periphery than at the center.
- the invention also relates to the use of a direct laser writing bench as described above for carrying out a step of a photolithographic process.
- FIG. 2 represents a general view of a laser writing bench according to the prior art
- FIG. 3 represents the focusing of the writing beam on the substrate according to the prior art
- Figures 4, 5 and 6 show schematically different embodiments according to the invention of the focusing of the writing beam on the substrate.
- the general principle of the device according to the invention is to introduce on the writing bench optical or mechanical means arranged so that the useful part of the optical beam is inclined at the level of the plane of the photosensitive layers in order to create in said layers of inverse slope profiles, the useful part of the optical beam being the part of the optical beam that actually contributes to create said profiles.
- FIGS. 4 to 6 Several embodiments are possible. They are represented in FIGS. 4 to 6. In each figure, the beam F coming from the source 20 is represented by a series of light rays, the focusing optics 23 and the substrate 1.
- the optical axis of the focusing optics is perpendicular to the plane of the photosensitive layers and the bench comprises partial optical beam closing means 50 located in the vicinity of the optics of the optics. focusing.
- the shutter means are located before the focusing optics
- the shutter means are located after the focusing optics.
- the shutter means are an opaque thin flat plate with a straight edge, as illustrated in FIGS. 4 and 5, or an apodization plate making it possible to generate, at the plane of the light-sensitive planar layers, an optical beam such as the useful portion of the optical beam. is inclined at the plane of the photosensitive layers without diffraction fringes.
- the closure means may be mounted on at least one platen adjustable in translation and / or in rotation so as to adjust the angle of attack of the focusing beam.
- the great advantages of this technique are its simplicity of implementation which requires little adaptation of the bench and its adjustment possibilities, offering the ability to dynamically adjust the closing means.
- the shutter means may be selected from absorption filters, reflection filters, interference filters, neutral filters and polarizing filters.
- the optical beam is radially symmetrical up to the level of the plane of the light-sensitive planar layers, the optical axis of the focusing optics being perpendicular to the plane of the photosensitive layers, the optical beam being defocused. a distance d at the plane of the photosensitive plane layers.
- the pre-focusing or focusing optics can introduce spherical aberration on the optical beam so that the spherical aberration caustic at the level of the plane of the photosensitive planar layers has more energy in it. periphery than in the center, favoring photosensitization.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020137010863A KR20130132782A (ko) | 2010-10-27 | 2011-10-18 | 음의 경사 측벽들을 갖는 메사 구조물들의 레이저 직접 기록을 위한 시스템 |
US13/882,194 US20130213944A1 (en) | 2010-10-27 | 2011-10-18 | System for Laser Direct Writing of MESA Structures Having Negatively Sloped Sidewalls |
CN2011800523615A CN103201681A (zh) | 2010-10-27 | 2011-10-18 | 用于具有负倾斜侧壁的台面结构的激光直写的系统 |
EP11770461.9A EP2633366A1 (fr) | 2010-10-27 | 2011-10-18 | Banc d'ecriture laser directe de structures mesa comportant des flancs a pentes negatives |
JP2013535359A JP2014500523A (ja) | 2010-10-27 | 2011-10-18 | 逆傾斜の側壁を有するメサ構造へのレーザー直接書き込みシステム |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1058832 | 2010-10-27 | ||
FR1058832A FR2966940B1 (fr) | 2010-10-27 | 2010-10-27 | Banc d'ecriture laser directe de structures mesa comportant des flancs a pentes negatives |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012055725A1 true WO2012055725A1 (fr) | 2012-05-03 |
Family
ID=43589557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/068168 WO2012055725A1 (fr) | 2010-10-27 | 2011-10-18 | Banc d'ecriture laser directe de structures mesa comportant des flancs a pentes negatives |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130213944A1 (fr) |
EP (1) | EP2633366A1 (fr) |
JP (1) | JP2014500523A (fr) |
KR (1) | KR20130132782A (fr) |
CN (1) | CN103201681A (fr) |
FR (1) | FR2966940B1 (fr) |
WO (1) | WO2012055725A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110034388B (zh) * | 2019-04-18 | 2024-02-06 | 浙江清华柔性电子技术研究院 | 天线制备方法及具有其的天线 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6255035B1 (en) * | 1999-03-17 | 2001-07-03 | Electron Vision Corporation | Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices |
JP2008197479A (ja) * | 2007-02-14 | 2008-08-28 | Bonmaaku:Kk | メタルマスク及びマスクの製造方法 |
JP2009204723A (ja) * | 2008-02-26 | 2009-09-10 | Sumitomo Electric Ind Ltd | 回折格子の形成方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6466352B1 (en) * | 1999-04-23 | 2002-10-15 | Arie Shahar | High-resolution reading and writing scan system for planar and cylindrical surfaces |
US20030099452A1 (en) * | 2001-11-28 | 2003-05-29 | Borrelli Nicholas F. | Manipulating the size of waveguides written into substrates using femtosecond laser pulses |
CN1259171C (zh) * | 2003-08-22 | 2006-06-14 | 中国科学院上海光学精密机械研究所 | 飞秒倍频激光直写系统及微加工方法 |
TWI302339B (en) * | 2005-11-23 | 2008-10-21 | Delta Electronics Inc | Manufacturing method of microstructure |
JP2010199115A (ja) * | 2009-02-23 | 2010-09-09 | Victor Co Of Japan Ltd | パターン形成方法 |
-
2010
- 2010-10-27 FR FR1058832A patent/FR2966940B1/fr not_active Expired - Fee Related
-
2011
- 2011-10-18 US US13/882,194 patent/US20130213944A1/en not_active Abandoned
- 2011-10-18 KR KR1020137010863A patent/KR20130132782A/ko not_active Application Discontinuation
- 2011-10-18 EP EP11770461.9A patent/EP2633366A1/fr not_active Withdrawn
- 2011-10-18 CN CN2011800523615A patent/CN103201681A/zh active Pending
- 2011-10-18 WO PCT/EP2011/068168 patent/WO2012055725A1/fr active Application Filing
- 2011-10-18 JP JP2013535359A patent/JP2014500523A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6255035B1 (en) * | 1999-03-17 | 2001-07-03 | Electron Vision Corporation | Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices |
JP2008197479A (ja) * | 2007-02-14 | 2008-08-28 | Bonmaaku:Kk | メタルマスク及びマスクの製造方法 |
JP2009204723A (ja) * | 2008-02-26 | 2009-09-10 | Sumitomo Electric Ind Ltd | 回折格子の形成方法 |
Non-Patent Citations (1)
Title |
---|
RABE E ET AL: "The generation of mould patterns for multimode optical waveguide components by direct laser writing of SU-8 at 364 nm; Mould pattern generation by direct laser writing of SU-8", JOURNAL OF MICROMECHANICS & MICROENGINEERING, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 17, no. 8, 1 August 2007 (2007-08-01), pages 1664 - 1670, XP020120205, ISSN: 0960-1317, DOI: DOI:10.1088/0960-1317/17/8/033 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110034388B (zh) * | 2019-04-18 | 2024-02-06 | 浙江清华柔性电子技术研究院 | 天线制备方法及具有其的天线 |
Also Published As
Publication number | Publication date |
---|---|
FR2966940A1 (fr) | 2012-05-04 |
FR2966940B1 (fr) | 2013-08-16 |
EP2633366A1 (fr) | 2013-09-04 |
CN103201681A (zh) | 2013-07-10 |
US20130213944A1 (en) | 2013-08-22 |
KR20130132782A (ko) | 2013-12-05 |
JP2014500523A (ja) | 2014-01-09 |
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