WO2012046955A3 - Dispositif électroluminescent semi-conducteur à base de nitrure - Google Patents

Dispositif électroluminescent semi-conducteur à base de nitrure Download PDF

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Publication number
WO2012046955A3
WO2012046955A3 PCT/KR2011/006506 KR2011006506W WO2012046955A3 WO 2012046955 A3 WO2012046955 A3 WO 2012046955A3 KR 2011006506 W KR2011006506 W KR 2011006506W WO 2012046955 A3 WO2012046955 A3 WO 2012046955A3
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WO
WIPO (PCT)
Prior art keywords
layer
light emitting
emitting device
semiconductor light
based semiconductor
Prior art date
Application number
PCT/KR2011/006506
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English (en)
Korean (ko)
Other versions
WO2012046955A2 (fr
Inventor
전성란
송영호
김재범
김영우
천우영
김진홍
Original Assignee
한국광기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국광기술원 filed Critical 한국광기술원
Priority to US13/818,572 priority Critical patent/US8759815B2/en
Publication of WO2012046955A2 publication Critical patent/WO2012046955A2/fr
Publication of WO2012046955A3 publication Critical patent/WO2012046955A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

La présente invention se rapporte à un dispositif électroluminescent semi-conducteur à base de nitrure et plus particulièrement, à un dispositif électroluminescent semi-conducteur à base de nitrure qui présente un rendement de luminescence amélioré en augmentant la vitesse de recombinaison des électrons et des trous qui contribuent à l'électroluminescence, ce qui résulte de l'appariement de la distribution spatiale des fonctions d'onde d'électrons et de trous. Le dispositif électroluminescent semi-conducteur à base de nitrure selon la présente invention comprend une couche de nitrure de type n, une couche active formée sur la couche de nitrure de type n, et une couche de nitrure de type p formée sur la couche active. A ce stade, une couche de commande de contrainte est formée à partir d'une couche au moins dans la couche active et la ou les couches présentent une bande interdite d'énergie plus grande que celle d'une couche de puits quantique dans la couche active. La couche de commande de contrainte est disposée dans une zone où est formée la couche de puits quantique de la couche active. En outre, une bande interdite d'énergie de la couche de commande de contrainte est inférieure à celle d'une couche barrière quantique de la couche active.
PCT/KR2011/006506 2010-10-04 2011-09-01 Dispositif électroluminescent semi-conducteur à base de nitrure WO2012046955A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/818,572 US8759815B2 (en) 2010-10-04 2011-09-01 Nitride based semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0096356 2010-10-04
KR1020100096356A KR101211657B1 (ko) 2010-10-04 2010-10-04 질화물계 반도체 발광소자

Publications (2)

Publication Number Publication Date
WO2012046955A2 WO2012046955A2 (fr) 2012-04-12
WO2012046955A3 true WO2012046955A3 (fr) 2012-06-07

Family

ID=45928181

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006506 WO2012046955A2 (fr) 2010-10-04 2011-09-01 Dispositif électroluminescent semi-conducteur à base de nitrure

Country Status (3)

Country Link
US (1) US8759815B2 (fr)
KR (1) KR101211657B1 (fr)
WO (1) WO2012046955A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256368B2 (en) * 2012-12-18 2019-04-09 Sk Siltron Co., Ltd. Semiconductor substrate for controlling a strain
KR102342713B1 (ko) * 2015-06-23 2021-12-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
KR102359824B1 (ko) * 2015-07-24 2022-02-08 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 자외선 발광소자 및 발광소자 패키지
KR102432225B1 (ko) * 2015-10-27 2022-08-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 조명시스템
KR102471685B1 (ko) * 2016-03-22 2022-11-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 조명장치
CN111834498B (zh) * 2019-04-19 2022-01-25 开发晶照明（厦门）有限公司 发光二极管的外延发光结构
US11424393B2 (en) 2019-04-19 2022-08-23 Kaistar Lighting (Xiamen) Co., Ltd. Light-emitting diode and light-emitting module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2552343A1 (fr) * 1983-09-27 1985-03-29 Rech Geolog Miniere Procede et appareil de separation par flottation
WO2006081611A1 (fr) * 2005-02-01 2006-08-10 The University Of Newcastle Research Associates Limited Procede et appareil pour la mise en contact de bulles et de particules dans un systeme de separation par flottation
WO2008156795A1 (fr) * 2007-06-19 2008-12-24 Renewable Algal Energy, Llc Procédé et appareil pour séparation de bulles adsorbantes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234545A (ja) 2002-02-07 2003-08-22 Sanyo Electric Co Ltd 半導体発光素子
KR100649749B1 (ko) 2005-10-25 2006-11-27 삼성전기주식회사 질화물 반도체 발광 소자
KR100780212B1 (ko) 2006-03-30 2007-11-27 삼성전기주식회사 질화물 반도체 소자
KR101262854B1 (ko) 2006-10-13 2013-05-09 엘지이노텍 주식회사 질화물계 발광 소자
EP1976031A3 (fr) * 2007-03-29 2010-09-08 Seoul Opto Device Co., Ltd. Diode électroluminescente disposant de couches de barrière et/ou forage avec une structure de réseau superposé
KR20100049451A (ko) 2008-11-03 2010-05-12 삼성엘이디 주식회사 질화물 반도체 소자

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2552343A1 (fr) * 1983-09-27 1985-03-29 Rech Geolog Miniere Procede et appareil de separation par flottation
WO2006081611A1 (fr) * 2005-02-01 2006-08-10 The University Of Newcastle Research Associates Limited Procede et appareil pour la mise en contact de bulles et de particules dans un systeme de separation par flottation
WO2008156795A1 (fr) * 2007-06-19 2008-12-24 Renewable Algal Energy, Llc Procédé et appareil pour séparation de bulles adsorbantes

Also Published As

Publication number Publication date
KR20120034952A (ko) 2012-04-13
US20130299775A1 (en) 2013-11-14
US8759815B2 (en) 2014-06-24
WO2012046955A2 (fr) 2012-04-12
KR101211657B1 (ko) 2012-12-13

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