WO2012046897A1 - Method for manufacturing porous silicon carbide ceramics - Google Patents

Method for manufacturing porous silicon carbide ceramics Download PDF

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WO2012046897A1
WO2012046897A1 PCT/KR2010/006885 KR2010006885W WO2012046897A1 WO 2012046897 A1 WO2012046897 A1 WO 2012046897A1 KR 2010006885 W KR2010006885 W KR 2010006885W WO 2012046897 A1 WO2012046897 A1 WO 2012046897A1
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silicon carbide
porous silicon
carbide ceramics
powder
ceramics
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PCT/KR2010/006885
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French (fr)
Korean (ko)
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김득중
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성균관대학교 산학협력단
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Priority to PCT/KR2010/006885 priority Critical patent/WO2012046897A1/en
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D39/00Filtering material for liquid or gaseous fluids
    • B01D39/14Other self-supporting filtering material ; Other filtering material
    • B01D39/20Other self-supporting filtering material ; Other filtering material of inorganic material, e.g. asbestos paper, metallic filtering material of non-woven wires
    • B01D39/2068Other inorganic materials, e.g. ceramics
    • B01D39/2072Other inorganic materials, e.g. ceramics the material being particulate or granular
    • B01D39/2075Other inorganic materials, e.g. ceramics the material being particulate or granular sintered or bonded by inorganic agents
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/991Boron carbide
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/16Pore diameter
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00793Uses not provided for elsewhere in C04B2111/00 as filters or diaphragms
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38Non-oxide ceramic constituents or additives
    • C04B2235/3817Carbides
    • C04B2235/3826Silicon carbides
    • C04B2235/3834Beta silicon carbide
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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/76Crystal structural characteristics, e.g. symmetry
    • C04B2235/767Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Definitions

  • the present invention relates to a method for producing porous silicon carbide ceramics, and more particularly, to prevent sintering during heat treatment by oxidizing beta-type silicon carbide powder, and to achieve a planar shape through rapid grain growth that occurs simultaneously with a phase change to an alpha phase.
  • the present invention relates to a method for producing porous silicon carbide ceramics in which the particles are entangled with each other to improve the strength of the porous silicon carbide ceramics.
  • Silicon carbide has been developed for high temperature structural materials because of its excellent physical properties and chemical stability at high temperatures.
  • porous silicon carbide ceramics are attracting attention as materials for diesel engine dust filters, heat exchanger power plant dust filters, and casting filters because of their excellent heat resistance, corrosion resistance, and thermal shock resistance.
  • porous silicon carbide ceramics Conventional methods for producing porous silicon carbide ceramics include partial sintering and recrystallization, reaction sintering, template, and polyurethane foam. In the case of these methods, the inter-particle bonding is partially formed, or in the case of using a polyurethane foam, which is the most preferred method, the place where the urethane is removed is removed at high temperature, and the void remains in the void space, and the strength is lowered. Has been.
  • An object of the present invention was devised to solve the problems of the prior art, the beta-type silicon carbide powder pre-treated using the point that the beta-type silicon carbide rapidly changes to alpha-type silicon carbide at a high temperature as a starting material It is to provide a high-strength porous silicon carbide ceramics of a network structure in which enormous plate particles are entangled, and a method of manufacturing the same.
  • Another object of the present invention is to provide a method for controlling the density, porosity, or pore size of the porous silicon carbide ceramics by adding various additives to the pretreated beta-type silicon carbide powder.
  • Still another object of the present invention is to provide a use of porous silicon carbide ceramics having the above excellent physical properties.
  • the present invention provides a porous silicon carbide ceramics of the network structure in which the plate-shaped particles are entangled with each other.
  • the invention also relates to the invention.
  • It provides a method for producing porous silicon carbide ceramics comprising a heat treatment step of the oxidation-treated beta-type silicon carbide powder.
  • the present invention also provides a method for controlling the density and porosity of porous silicon carbide ceramics comprising the step of heat treatment by mixing the oxidized beta-type silicon carbide powder, the phase change promoting material and the sintering aid.
  • the present invention also provides a method for controlling pore size of porous silicon carbide ceramics, which comprises a step of mixing and heat-treating an oxidized beta-type silicon carbide powder, a phase change promoting material, and an alpha-type silicon carbide powder.
  • the present invention also provides diesel engine dust filters, porous heat exchanger dust filters, foundry filters, incineration dust filters, hot corrosive gas filters, CVD or burner gas distributors, or high temperature applications comprising porous silicon carbide ceramics of such excellent properties.
  • diesel engine dust filters porous heat exchanger dust filters, foundry filters, incineration dust filters, hot corrosive gas filters, CVD or burner gas distributors, or high temperature applications comprising porous silicon carbide ceramics of such excellent properties.
  • the present invention unlike the conventional partial sintering, recrystallization method, reaction sintering, template method, polyurethane foam method and the like has a disadvantage in that the strength is lowered due to weak particle bonding, the growth of particles and the cross-linked network structure Porous silicon carbide is formed by forming, and the porous silicon carbide of such a microstructure has an effect of maintaining a high strength due to strong bonding between particles.
  • Figure 1 shows the microstructure of the porous silicon carbide ceramics prepared using the oxidation-treated beta-type silicon carbide (Predmaterial) powder of the present invention.
  • Figure 2 shows the microstructure of the porous silicon carbide ceramics prepared using the oxidation-free beta-type silicon carbide (Predmaterial, Inc.) powder.
  • Figure 3 shows the microstructure of the sintered body prepared using the oxidation-treated beta-type silicon carbide (Ibiden) powder of the present invention.
  • Figure 4 shows the microstructure of the sintered body prepared using beta-type silicon carbide (Ibiden) powder not treated.
  • Figure 5 shows the porosity change of the specimen prepared by adding the sintering aid to the oxidation-treated beta-type silicon carbide powder of the present invention.
  • Figure 6 shows the microstructure of the specimen prepared by adding 5 parts by weight of the sintering aid to the oxidation-treated beta-type silicon carbide powder of the present invention.
  • Figure 7 shows the microstructure of the porous silicon carbide sintered body by adding the alpha-type silicon carbide seed (seed) to the oxidized beta-type silicon carbide powder of the present invention.
  • Figure 8 shows the change in pore size of the porous silicon carbide sintered body by the addition of alpha-type silicon carbide seed to the oxidation-treated beta-type silicon carbide powder of the present invention.
  • Figure 9 shows the change in strength of the silicon carbide sintered body according to the addition of alpha-type silicon carbide seed to the oxidized beta-type silicon carbide powder of the present invention.
  • the present invention relates to porous silicon carbide ceramics having a network structure in which plate-shaped particles are entangled with each other.
  • Porous silicon carbide ceramics of the present invention using a beta-type silicon carbide powder to prevent shrinkage due to sintering at high temperature and to control the particle growth of the alpha-type silicon carbide particles in the process of phase change to the alpha phase well shaped plate-shaped particles It is characterized by having a high strength by allowing the to form a network structure intertwined with each other.
  • the porous silicon carbide ceramics have a network structure and thus may exhibit high strength of 35 to 45 MPa according to the four-point strength measurement method.
  • porous silicon carbide ceramics of the present invention exhibit a network structure of alpha-type silicon carbide particles through a phase change of the beta-type silicon carbide powder, and polymorphism transition analysis results through the pretreatment process of oxidizing the beta-type silicon carbide powder.
  • Type 3C is characterized by the polymorphism transition to 6H to 30 to 100%.
  • Porous silicon carbide ceramics of the present invention represent a network structure of alpha-type silicon carbide particles, characterized in that the pore size of the network structure is 1 to 30 ⁇ m.
  • the invention also relates to the invention.
  • It relates to a method for producing porous silicon carbide ceramics comprising the heat treatment step of the oxidation-treated beta-type silicon carbide powder.
  • silicon carbide beta phase and alpha phase there are two types of silicon carbide beta phase and alpha phase, and the alpha phase is stable at high temperature, so when the beta phase silicon carbide raw material is used, the phase change occurs at an temperature of 2000 ° C. or higher. In this process, abrupt grain growth is observed.
  • porous silicon carbide ceramics having a network structure are manufactured by using the steep grain growth simultaneously with the phase change to the alpha phase that occurs during the high temperature heat treatment process using the beta-phase silicon carbide powder as a raw material. Can be.
  • the beta-type silicon carbide powder may have a particle size of 10 nm to 2 ⁇ m, but is not particularly limited thereto.
  • silicon carbide raw material powder has an oxide as an impurity on the surface, which acts as an obstacle to prevent sintering. Therefore, in order to manufacture the sintered body, it is a general method to remove the surface oxide through a carbon heat reduction reaction by further adding carbon to heat treatment at high temperature.
  • the present invention is to produce a porous ceramics of low density, the oxide present on the surface is effective for the production of silicon carbide porous in order to suppress the sintering in the heat treatment process and to generate grain growth by the evaporation-condensation process.
  • oxides present on the surface of the silicon carbide raw material powder are used as they are or artificially heat-treated at 300 to 1400 ° C in air to remove excess carbon or oxides on the surface. It is good to form on the surface and use it as raw material powder.
  • the porous silicon carbide ceramics having a relatively high density of the silicon carbide microstructure and the network structure in which the particles are grown are not produced, and the non-oxidized beta is not produced. Unreacted carbon is present in the type silicon carbide powder, which may adversely affect the preparation of the porous body.
  • the mixed raw materials may be molded into a desired shape and heat-treated at 1900 to 2200 ° C. to produce porous silicon carbide ceramics of high strength.
  • the molded article may be placed in a graphite crucible and heated to 1000 to 1500 ° C. in a vacuum atmosphere, and the atmosphere may be changed to an argon atmosphere and raised to 1900 to 2200 ° C., followed by cooling for 0 to 180 minutes.
  • a phase change promoting material may be additionally used to promote phase change in the heat treatment of the oxidized raw material powder.
  • the phase change promoting material may be one or more metals or salts thereof selected from the group consisting of B, Al, or iron-based metals such as Fe, Ni, Cr, or the like, but is not particularly limited thereto.
  • the phase change promoting material may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the beta-type silicon carbide powder. This is because when the content is less than 0.1 part by weight, uniform mixing is difficult and when it exceeds 10 parts by weight, other compounds may be produced.
  • the present invention also relates to a method for controlling the density and porosity of porous silicon carbide ceramics comprising the step of mixing and heat-treating an oxidized beta-type silicon carbide powder, a phase change promoting material, and a sintering aid.
  • Density and porosity control method of the porous silicon carbide ceramics of the present invention is characterized by controlling the density and porosity of the ceramics by adjusting the amount of the sintering aid when the porous silicon carbide ceramics of the present invention. As the amount of the sintering aid increases, the density increases and the porosity decreases.
  • the oxidation treatment of the beta-type silicon carbide powder is as described above.
  • the oxidized beta-type silicon carbide powder may be included in an amount of 80 to 99.9 parts by weight based on 100 parts by weight of the mixed powder. If the content is less than 80 parts by weight, the properties are limited by the decrease in the number of manufactured products, and if it exceeds 99.9 parts by weight because the phase change is slow.
  • phase change promoting material is as described above.
  • the phase change promoting material may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the mixed powder. This is because when the content is less than 0.1 part by weight, uniform mixing is difficult and when it exceeds 10 parts by weight, other compounds may be produced.
  • the sintering aid may be used alone or two or more kinds of organic polymers such as carbon or carbon remaining after heat treatment such as a phenol resin, but are not particularly limited thereto.
  • the sintering aid may be included in an amount of 1 to 10 parts by weight based on 100 parts by weight of the mixed powder. As the amount of the sintering aid is increased, the microstructure of the silicon carbide ceramics exhibits a grain growth pattern of a general shape rather than a network shape, and the density of the sintered body. Increasing the porosity may decrease.
  • porous silicon carbide ceramics of the present invention may further include a removable organic material, that is, a plastic material that is decomposed at a high temperature during the heat treatment.
  • a removable organic material that is, a plastic material that is decomposed at a high temperature during the heat treatment.
  • the site where the plastic material was located may remain as pores after the heat treatment to decrease the density and increase the porosity.
  • the plastic material may be paper, sawdust, or organic polymer, but is not particularly limited thereto.
  • the density of the ceramics prepared according to the porosity control method of the porous silicon carbide ceramics of the present invention may be 10 to 80%, the porosity may be 20 to 90%.
  • the present invention also relates to a method for controlling pore size of porous silicon carbide ceramics comprising the step of mixing and heat-treating an oxidized beta-type silicon carbide powder, a phase change promoting substance, and an alpha-type silicon carbide powder.
  • the method for controlling the pore size of the porous silicon carbide ceramics of the present invention is characterized in that the pore size is controlled by adding an alpha type silicon carbide powder as a seed when the porous silicon carbide ceramics of the present invention are seeded.
  • the oxidation treatment of the beta-type silicon carbide powder is as described above.
  • the oxidized beta-type silicon carbide powder may be included in an amount of 90 to 99.9 parts by weight based on 100 parts by weight of the mixed powder. If the content is less than 90 parts by weight, the amount of seeds is increased, the structure is similar to the case of using the alpha-type raw material, and if it exceeds 99.9 parts by weight, the seed amount is small and the effect of addition is less.
  • phase change promoting material is as described above.
  • the phase change promoting material may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the mixed powder. If the content is less than 0.1 parts by weight of the seed effect is small, if it exceeds 10 parts by weight because the seed amount is large because the structure is similar to the case of using the alpha-type raw material.
  • the alpha-type silicon carbide powder may be used having a particle size of 10 nm to 5 ⁇ m, but is not particularly limited thereto.
  • the alpha-type silicon carbide powder may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the mixed powder. As the content of the alpha-type silicon carbide powder increases, the porosity is similar, but the pore size becomes smaller.
  • the porous silicon carbide ceramics of the present invention may further include a removable organic material that is decomposed at high temperatures during heat treatment, that is, a plastic material.
  • the kind of the plastic material is as described above.
  • the pore size of the ceramics according to the pore size control method of the porous silicon carbide ceramics of the present invention may be 1 to 30 ⁇ m.
  • the invention also provides diesel engine dust filters, heat exchanger power plant dust filters, foundry filters, incineration dust filters, hot corrosive gas filters, gas distributors for CVD or burners, or high temperature applications comprising the porous silicon carbide ceramics of the present invention. And a membrane support for hydrogen separation and lightweight structural components.
  • Porous silicon carbide ceramics of the present invention exhibit a network structure in which alpha-type silicon carbide particles are entangled with each other to maintain high strength, so that diesel engine dust filters, heat exchanger power plant dust filters, casting filters, incineration dust filters, and high temperature corrosive gases It can be used in filters, gas distributors for CVD or burners, or membrane supports for hydrogen separation and lightweight structural components for high temperature applications.
  • ⁇ -silicon carbide (SiC) Pred material having an average particle size of 50-100 nm for 1 hour in air at 650 ° C
  • 1 part by weight of boron carbide was added to promote phase change, followed by mixing and drying.
  • the starting powder was obtained by grinding.
  • the powder thus obtained was uniaxially press-molded at a pressure of 150 MPa with a mold mold to prepare a molded body.
  • the molded body was placed in a graphite crucible and the atmosphere was changed to 1450 ° C. in a vacuum atmosphere, and the atmosphere was changed to an argon atmosphere, raised to 2100 ° C., and then cooled for 10 minutes.
  • the heat treated specimens had a relative density of 53%, strength of 45 MPa, and average pore size of 7.26 ⁇ m.
  • the microstructure showed the network structure of FIG. 1 as the rapid grain growth progressed.
  • the specimen was prepared in the same manner as in Example 1 by adding 1 part by weight of boron carbide to the non-oxidized beta-type silicon carbide powder.
  • the microstructure of the specimen exhibited a high density of 74%, and it was difficult to prepare porous silicon carbide ceramics having high porosity of the network structure in which the particles were grown as shown in FIG. 1. It was thought that about 3% of unreacted carbon was present in the powder of ⁇ -silicon carbide (SiC) (Pred material), which is a raw material used, and this was considered to adversely affect the preparation of the porous body.
  • SiC ⁇ -silicon carbide
  • Example 2 After oxidizing high purity ⁇ -silicon carbide (Japan Ibiden Co. Ltd) powder having an average particle size of 0.3 ⁇ m as in Example 1, 1 part by weight of boron carbide was added to promote phase change, followed by mixing, drying, and grinding. Through this, two kinds of starting powders were obtained. The powder thus obtained was placed in a mold mold and press-molded at 150 MPa pressure to produce a disk-shaped molded body.
  • ⁇ -silicon carbide Japanese Industrial Standarden Co. Ltd
  • the molded product was placed in a graphite crucible and heated to 1450 ° C. in a vacuum atmosphere, raised from 1450 ° C. to 2100 ° C. in an argon atmosphere, and then cooled for 30 minutes.
  • the porous silicon carbide has a density of 52% and a porosity of 48%.
  • the sintered compact of was manufactured.
  • a specimen was prepared in the same manner as in Example 2 except that the silicon carbide powder of Example 2 was not oxidized.
  • the sintering was partially performed, and the relative density was 82%, and the microstructure showed a general grain growth pattern.
  • the silicon carbide microstructure shows the grain growth of the general form rather than the network type of FIG. 1, and the density of the sintered body is also increased to decrease the porosity. .
  • the sintered compact showed a more dense network structure as the amount of ⁇ -silicon carbide added. That is, the pore size tended to decrease as the amount of ⁇ -silicon carbide added.
  • the porosity of the addition of ⁇ -silicon carbide was similar from 53.5% to 55.5%, and the average pore size was 3.29 ⁇ m at 2 parts by weight, 2.15 ⁇ m at 5 parts by weight, and 2.11 ⁇ m at 10 parts by weight.
  • the porous silicon carbide ceramics of the present invention have a high strength due to the network structure, so that diesel engine dust filters, heat exchanger power plant dust filters, casting filters, incineration dust filters, hot corrosion gas filters, CVD or burner gas distributors, or It can be used for hydrogen separation for high temperature applications and membrane support for lightweight structural components.

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Abstract

The present invention relates to a method for manufacturing porous silicon carbide ceramics, and more particularly, to a method for manufacturing porous silicon carbide ceramics which have improved strength by virtue of the mesh network structure of same in which plate-shaped particles are mutually entangled, and which are formed through phase transformation in which beta-type silicon carbide powder is oxidation treated and sintering is prevented during heat treatment in order to transform the powder to an alpha phase as well as to rapidly grow the particles.

Description

다공질 탄화규소 세라믹스의 제조방법Manufacturing Method of Porous Silicon Carbide Ceramics
본 발명의 다공질 탄화규소 세라믹스의 제조방법에 관한 것으로, 보다 상세하게는 베타형 탄화규소 분말을 산화처리함으로써 열처리 과정에서 소결을 방지하고 알파 상으로 변하는 상변화와 동시에 일어나는 급격한 입자성장을 통해 판상형의 입자가 서로 얽혀있는 망상구조를 나타내어 다공질 탄화규소 세라믹스의 강도가 향상되는 다공질 탄화규소 세라믹스의 제조방법에 관한 것이다.The present invention relates to a method for producing porous silicon carbide ceramics, and more particularly, to prevent sintering during heat treatment by oxidizing beta-type silicon carbide powder, and to achieve a planar shape through rapid grain growth that occurs simultaneously with a phase change to an alpha phase. The present invention relates to a method for producing porous silicon carbide ceramics in which the particles are entangled with each other to improve the strength of the porous silicon carbide ceramics.
탄화규소는 고온에서의 우수한 물리적 특성과 화학적으로 안정하여 고온 구조재료로서 많은 용도가 개발되어 왔다. 특히 다공질 탄화규소 세라믹스는 내열, 내식, 열충격저항성 등이 우수하여 디젤 엔진 분진 필터나 열교환기 발전소 분진 필터, 주물용필터 등의 소재로 주목 받고 있다. Silicon carbide has been developed for high temperature structural materials because of its excellent physical properties and chemical stability at high temperatures. In particular, porous silicon carbide ceramics are attracting attention as materials for diesel engine dust filters, heat exchanger power plant dust filters, and casting filters because of their excellent heat resistance, corrosion resistance, and thermal shock resistance.
기존의 다공질 탄화규소 세라믹스 제조방법으로는 부분소결이나 재결정화법, 반응소결, 템플레이트법, 폴리우레탄 폼을 이용하는 방법들이 있다. 이 방법들의 경우 입자간 결합이 부분적으로 이루어지거나, 가장 선호하는 방법인 폴리우레탄 폼을 이용하는 경우 우레탄이 있던 자리가 고온에서 우레탄이 제거되고 빈 공간으로 남아 강도가 낮아져 기공율이 증가하면 사용에 제한이 되어 왔다.Conventional methods for producing porous silicon carbide ceramics include partial sintering and recrystallization, reaction sintering, template, and polyurethane foam. In the case of these methods, the inter-particle bonding is partially formed, or in the case of using a polyurethane foam, which is the most preferred method, the place where the urethane is removed is removed at high temperature, and the void remains in the void space, and the strength is lowered. Has been.
본 발명의 목적은 상기 종래기술의 문제점을 해결하기 위해 안출된 것으로, 고온에서 베타형 탄화규소가 알파형 탄화규소로 빠르게 상변화가 일어나는 점을 이용하여 전처리한 베타형 탄화규소 분말을 시작물질로 하는 거대한 판상입자가 얽혀있는 망상구조의 고강도의 다공질 탄화규소 세라믹스 및 이의 제조방법을 제공하는 것이다.An object of the present invention was devised to solve the problems of the prior art, the beta-type silicon carbide powder pre-treated using the point that the beta-type silicon carbide rapidly changes to alpha-type silicon carbide at a high temperature as a starting material It is to provide a high-strength porous silicon carbide ceramics of a network structure in which enormous plate particles are entangled, and a method of manufacturing the same.
본 발명의 다른 목적은 전처리한 베타형 탄화규소 분말에 다양한 첨가제를 부가함으로써 상기 다공질 탄화규소 세라믹스의 밀도, 기공율, 또는 기공 크기를 제어하는 방법을 제공하는 것이다.Another object of the present invention is to provide a method for controlling the density, porosity, or pore size of the porous silicon carbide ceramics by adding various additives to the pretreated beta-type silicon carbide powder.
본 발명의 또 다른 목적은 상기 우수한 물성의 다공질 탄화규소 세라믹스의 용도를 제공하는 것이다.Still another object of the present invention is to provide a use of porous silicon carbide ceramics having the above excellent physical properties.
상기 목적을 달성하기 위하여, 본 발명은 판상모양의 입자가 서로 얽혀있는 망상구조의 다공질 탄화규소 세라믹스를 제공한다.In order to achieve the above object, the present invention provides a porous silicon carbide ceramics of the network structure in which the plate-shaped particles are entangled with each other.
본 발명은 또한 The invention also
베타형 탄화규소 분말을 산화처리하는 단계; 및Oxidizing the beta-type silicon carbide powder; And
상기 산화처리된 베타형 탄화규소 분말의 열처리 단계를 포함하는 다공질 탄화규소 세라믹스의 제조방법을 제공한다.It provides a method for producing porous silicon carbide ceramics comprising a heat treatment step of the oxidation-treated beta-type silicon carbide powder.
본 발명은 또한 산화처리된 베타형 탄화규소 분말, 상변화 촉진 물질 및 소결조제를 혼합하여 열처리 하는 단계를 포함하는 다공질 탄화규소 세라믹스의 밀도 및 기공율 제어방법을 제공한다.The present invention also provides a method for controlling the density and porosity of porous silicon carbide ceramics comprising the step of heat treatment by mixing the oxidized beta-type silicon carbide powder, the phase change promoting material and the sintering aid.
본 발명은 또한 산화처리된 베타형 탄화규소 분말, 상변화 촉진 물질 및 알파형 탄화규소 분말을 혼합하여 열처리 하는 단계를 포함하는 다공질 탄화규소 세라믹스의 기공 크기 제어방법을 제공한다.The present invention also provides a method for controlling pore size of porous silicon carbide ceramics, which comprises a step of mixing and heat-treating an oxidized beta-type silicon carbide powder, a phase change promoting material, and an alpha-type silicon carbide powder.
본 발명은 또한 상기 우수한 물성의 다공질 탄화규소 세라믹스를 포함하는 디젤 엔진 분진 필터, 열교환기 발전소 분진 필터, 주물용 필터, 소각용 분진 필터, 고온 부식가스 필터, CVD 또는 버너용 가스분배기, 또는 고온 응용을 위한 수소 분리 및 경량 구조 성분용 막 지지체 중 어느 하나로부터 선택된 제품을 제공한다.The present invention also provides diesel engine dust filters, porous heat exchanger dust filters, foundry filters, incineration dust filters, hot corrosive gas filters, CVD or burner gas distributors, or high temperature applications comprising porous silicon carbide ceramics of such excellent properties. To a membrane support for hydrogen separation and lightweight structural components.
본 발명은 기존의 부분소결이나 재결정화법, 반응소결, 템플레이트법, 폴리우레탄 폼을 이용하는 방법 등이 약한 입자 결합으로 인해 강도가 낮아지는 단점과는 달리 입자 성장과 입자가 서로 교차되어 있는 망상 구조를 형성하게 함으로써 다공질의 탄화규소를 형성시키며, 이러한 미세구조의 다공질 탄화규소는 입자간의 결합이 강하여 고강도를 유지할 수 있는 효과가 있다.The present invention, unlike the conventional partial sintering, recrystallization method, reaction sintering, template method, polyurethane foam method and the like has a disadvantage in that the strength is lowered due to weak particle bonding, the growth of particles and the cross-linked network structure Porous silicon carbide is formed by forming, and the porous silicon carbide of such a microstructure has an effect of maintaining a high strength due to strong bonding between particles.
도 1은 본 발명의 산화처리된 베타형 탄화규소(Predmaterial社) 분말을 이용하여 제조한 다공질 탄화규소 세라믹스의 미세구조를 나타낸 것이다. Figure 1 shows the microstructure of the porous silicon carbide ceramics prepared using the oxidation-treated beta-type silicon carbide (Predmaterial) powder of the present invention.
도 2는 산화처리하지 않은 베타형 탄화규소(Predmaterial社) 분말을 이용하여 제조한 다공질 탄화규소 세라믹스의 미세구조를 나타낸 것이다. Figure 2 shows the microstructure of the porous silicon carbide ceramics prepared using the oxidation-free beta-type silicon carbide (Predmaterial, Inc.) powder.
도 3은 본 발명의 산화처리된 베타형 탄화규소(Ibiden社) 분말을 사용하여 제조한 소결체의 미세구조를 나타낸 것이다. Figure 3 shows the microstructure of the sintered body prepared using the oxidation-treated beta-type silicon carbide (Ibiden) powder of the present invention.
도 4는 산화처리하지 않은 베타형 탄화규소(Ibiden社) 분말을 사용하여 제조한 소결체의 미세구조를 나타낸 것이다.Figure 4 shows the microstructure of the sintered body prepared using beta-type silicon carbide (Ibiden) powder not treated.
도 5는 본 발명의 산화처리된 베타형 탄화규소 분말에 소결조제를 첨가하여 제조한 시편의 기공율 변화를 나타낸 것이다. Figure 5 shows the porosity change of the specimen prepared by adding the sintering aid to the oxidation-treated beta-type silicon carbide powder of the present invention.
도 6은 본 발명의 산화처리된 베타형 탄화규소 분말에 5 중량부의 소결조제를 첨가하여 제조한 시편의 미세조직을 나타낸 것이다. Figure 6 shows the microstructure of the specimen prepared by adding 5 parts by weight of the sintering aid to the oxidation-treated beta-type silicon carbide powder of the present invention.
도 7은 본 발명의 산화처리된 베타형 탄화규소 분말에 알파형 탄화규소 시드(seed)를 첨가함에 따른 다공질 탄화규소 소결체의 미세조직을 나타낸 것이다. Figure 7 shows the microstructure of the porous silicon carbide sintered body by adding the alpha-type silicon carbide seed (seed) to the oxidized beta-type silicon carbide powder of the present invention.
도 8은 본 발명의 산화처리된 베타형 탄화규소 분말에 알파형 탄화규소 시드를 첨가함에 따른 다공질 탄화규소 소결체의 기공크기 변화를 나타낸 것이다. Figure 8 shows the change in pore size of the porous silicon carbide sintered body by the addition of alpha-type silicon carbide seed to the oxidation-treated beta-type silicon carbide powder of the present invention.
도 9는 본 발명의 산화처리된 베타형 탄화규소 분말에 알파형 탄화규소 시드를 첨가함에 따른 탄화규소 소결체의 강도 변화를 나타낸 것이다. Figure 9 shows the change in strength of the silicon carbide sintered body according to the addition of alpha-type silicon carbide seed to the oxidized beta-type silicon carbide powder of the present invention.
이하, 본 발명의 구성을 구체적으로 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, the structure of this invention is demonstrated concretely.
본 발명은 판상모양의 입자가 서로 얽혀있는 망상구조의 다공질 탄화규소 세라믹스에 관한 것이다.The present invention relates to porous silicon carbide ceramics having a network structure in which plate-shaped particles are entangled with each other.
본 발명의 다공질 탄화규소 세라믹스는 베타형 탄화규소 분말을 사용하여 고온에서 소결에 의한 수축을 방지하고 알파 상으로 상변화하는 과정에서 알파형 탄화규소 입자의 입자성장을 조절하여 잘 성장한 판상모양의 입자가 서로 얽혀 만드는 망상구조를 형성하게 함으로서 높은 강도를 가지는 것을 특징으로 한다.Porous silicon carbide ceramics of the present invention using a beta-type silicon carbide powder to prevent shrinkage due to sintering at high temperature and to control the particle growth of the alpha-type silicon carbide particles in the process of phase change to the alpha phase well shaped plate-shaped particles It is characterized by having a high strength by allowing the to form a network structure intertwined with each other.
상기 다공질 탄화규소 세라믹스는 망상구조를 가짐으로써 4점 강도 측정법에 따른 35 내지 45 MPa의 높은 강도를 나타낼 수 있다.The porous silicon carbide ceramics have a network structure and thus may exhibit high strength of 35 to 45 MPa according to the four-point strength measurement method.
또한, 본 발명의 다공질 탄화규소 세라믹스는 베타형 탄화규소 분말의 상변화를 통해 알파형 탄화규소 입자로 된 망상구조를 나타내며, 베타형 탄화규소 분말을 산화처리하는 전처리과정을 통해 다형전이 분석 결과 폴리타입 3C가 6H로의 다형전이가 30 내지 100 %로 진행되는 특징이 있다.In addition, the porous silicon carbide ceramics of the present invention exhibit a network structure of alpha-type silicon carbide particles through a phase change of the beta-type silicon carbide powder, and polymorphism transition analysis results through the pretreatment process of oxidizing the beta-type silicon carbide powder. Type 3C is characterized by the polymorphism transition to 6H to 30 to 100%.
본 발명의 다공질 탄화규소 세라믹스는 알파형 탄화규소 입자로 된 망상구조를 나타내며, 상기 망상구조의 기공 크기는 1 내지 30 ㎛ 인 것을 특징으로 한다.Porous silicon carbide ceramics of the present invention represent a network structure of alpha-type silicon carbide particles, characterized in that the pore size of the network structure is 1 to 30 ㎛.
본 발명은 또한The invention also
베타형 탄화규소 분말을 산화처리하는 단계; 및Oxidizing the beta-type silicon carbide powder; And
상기 산화처리된 베타형 탄화규소 분말의 열처리 단계를 포함하는 다공질 탄화규소 세라믹스의 제조방법에 관한 것이다.It relates to a method for producing porous silicon carbide ceramics comprising the heat treatment step of the oxidation-treated beta-type silicon carbide powder.
일반적으로, 탄화규소는 베타상과 알파상의 두 종류가 있으며 고온에서는 알파상이 안정하여 베타상의 탄화규소 원료를 사용하는 경우 2000 ℃ 이상의 온도에서 알파상으로 상변화가 일어난다. 이 과정에서 급격한 입자 성장이 관찰되어 본 발명에서는 베타상의 탄화규소 분말을 원료로 고온 열처리 과정에서 일어나는 알파상으로의 상변화와 동시에 일어나는 급격한 입자 성장을 이용하여 망상구조의 다공질 탄화규소 세라믹스를 제조할 수 있다. In general, there are two types of silicon carbide beta phase and alpha phase, and the alpha phase is stable at high temperature, so when the beta phase silicon carbide raw material is used, the phase change occurs at an temperature of 2000 ° C. or higher. In this process, abrupt grain growth is observed. In the present invention, porous silicon carbide ceramics having a network structure are manufactured by using the steep grain growth simultaneously with the phase change to the alpha phase that occurs during the high temperature heat treatment process using the beta-phase silicon carbide powder as a raw material. Can be.
상기 베타형 탄화규소 분말은 10 nm 내지 2 ㎛의 입자 크기를 가질 수 있으나, 이에 특별히 제한하는 것은 아니다.The beta-type silicon carbide powder may have a particle size of 10 nm to 2 μm, but is not particularly limited thereto.
또한, 대부분의 탄화규소 원료 분말은 표면에 불순물로 산화물이 존재하고 이는 소결을 방지하는 걸림돌로 작용한다. 따라서 소결체를 제조하기 위해서는 카본을 추가로 첨가하여 고온에서 열처리하여 탄소열 환원 반응을 통해 표면 산화물을 제거하는 것이 일반적인 방법이다. In addition, most silicon carbide raw material powder has an oxide as an impurity on the surface, which acts as an obstacle to prevent sintering. Therefore, in order to manufacture the sintered body, it is a general method to remove the surface oxide through a carbon heat reduction reaction by further adding carbon to heat treatment at high temperature.
본 발명은 저밀도의 다공질 세라믹스를 제조하는 것으로, 열처리 과정에서 소결을 억제하고 증발-응축 과정에 의한 입자성장을 발생시키기 위해서는 표면에 존재하는 산화물이 탄화규소 다공질 제조에는 효과적이다. The present invention is to produce a porous ceramics of low density, the oxide present on the surface is effective for the production of silicon carbide porous in order to suppress the sintering in the heat treatment process and to generate grain growth by the evaporation-condensation process.
원하는 다공질의 탄화규소 세라믹스 제조를 위해서는 탄화규소 원료 분말 표면에 존재하는 산화물을 그대로 이용하거나 인위적으로 공기 중에서 300 내지 1400 ℃ 온도에서 열처리 하는 산화처리를 통해 표면에 과잉으로 존재하는 카본을 제거하거나 산화물을 표면에 형성시켜 원료 분말로 사용하는 것이 좋다. In order to manufacture the desired porous silicon carbide ceramics, oxides present on the surface of the silicon carbide raw material powder are used as they are or artificially heat-treated at 300 to 1400 ° C in air to remove excess carbon or oxides on the surface. It is good to form on the surface and use it as raw material powder.
반면, 산화처리하지 않은 베타형 탄화규소 분말을 사용할 경우, 탄화규소 미세조직의 밀도가 상대적으로 높고, 입자가 성장된 망상구조의 고 기공율의 다공질 탄화규소 세라믹스가 제조되지 않으며, 산화처리하지 않은 베타형 탄화규소 분말에는 미반응 탄소가 존재하여 다공질체 제조에 좋지 않은 영향을 미칠 수 있다.On the other hand, when the non-oxidized beta-type silicon carbide powder is used, the porous silicon carbide ceramics having a relatively high density of the silicon carbide microstructure and the network structure in which the particles are grown are not produced, and the non-oxidized beta is not produced. Unreacted carbon is present in the type silicon carbide powder, which may adversely affect the preparation of the porous body.
혼합된 원료는 원하는 모양의 형태로 성형하고 1900 내지 2200 ℃에서 열처리 하여 고강도의 다공질 탄화규소 세라믹스를 제조할 수 있다. The mixed raw materials may be molded into a desired shape and heat-treated at 1900 to 2200 ° C. to produce porous silicon carbide ceramics of high strength.
보다 구체적으로, 성형체를 흑연도가니에 넣고 진공 분위기에서 1000 내지 1500 ℃까지 올리고 분위기를 아르곤 분위기로 바꾸어 1900 내지 2200 ℃까지 올린 후 0 내지 180 분간 유지한 후 냉각할 수 있다.More specifically, the molded article may be placed in a graphite crucible and heated to 1000 to 1500 ° C. in a vacuum atmosphere, and the atmosphere may be changed to an argon atmosphere and raised to 1900 to 2200 ° C., followed by cooling for 0 to 180 minutes.
상기 산화처리된 원료 분말을 열처리하는 단계에서 상변화를 촉진하기 위해 상변화 촉진 물질을 추가로 사용할 수 있다.A phase change promoting material may be additionally used to promote phase change in the heat treatment of the oxidized raw material powder.
상기 상변화 촉진 물질은 B, Al, 또는 Fe, Ni, Cr 등의 철계금속으로 이루어진 군으로부터 선택된 하나 이상의 금속 또는 이들의 염을 단독 또는 2종 이상 사용할 수 있으나, 이에 특별히 제한하는 것은 아니다.The phase change promoting material may be one or more metals or salts thereof selected from the group consisting of B, Al, or iron-based metals such as Fe, Ni, Cr, or the like, but is not particularly limited thereto.
상기 상변화 촉진 물질은 베타형 탄화규소 분말 100 중량부에 대하여 0.1 내지 10 중량부로 포함되는 것이 좋다. 상기 함량이 0.1 중량부 미만인 경우 균일한 혼합이 어렵고 10 중량부를 초과하는 경우는 다른 화합물을 생성할 수 있기 때문이다.The phase change promoting material may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the beta-type silicon carbide powder. This is because when the content is less than 0.1 part by weight, uniform mixing is difficult and when it exceeds 10 parts by weight, other compounds may be produced.
본 발명은 또한 산화처리된 베타형 탄화규소 분말, 상변화 촉진 물질 및 소결조제를 혼합하여 열처리 하는 단계를 포함하는 다공질 탄화규소 세라믹스의 밀도 및 기공율 제어방법에 관한 것이다.The present invention also relates to a method for controlling the density and porosity of porous silicon carbide ceramics comprising the step of mixing and heat-treating an oxidized beta-type silicon carbide powder, a phase change promoting material, and a sintering aid.
본 발명의 다공질 탄화규소 세라믹스의 밀도 및 기공율 제어방법은 본 발명의 다공질 탄화규소 세라믹스 제조 시 소결조제의 첨가량을 조절하여 세라믹스의 밀도 및 기공율을 제어하는 것을 특징으로 한다. 상기 소결조제의 첨가량이 증가할수록 밀도는 증가하고 기공율은 감소하는 양상을 나타낸다.Density and porosity control method of the porous silicon carbide ceramics of the present invention is characterized by controlling the density and porosity of the ceramics by adjusting the amount of the sintering aid when the porous silicon carbide ceramics of the present invention. As the amount of the sintering aid increases, the density increases and the porosity decreases.
상기 베타형 탄화규소 분말의 산화처리는 전술한 바와 같다.The oxidation treatment of the beta-type silicon carbide powder is as described above.
상기 산화처리된 베타형 탄화규소 분말은 혼합 분말 100 중량부에 대하여 80 내지 99.9 중량부로 포함되는 것이 좋다. 상기 함량이 80 중량부 미만인 경우는 제조된 제품의 수도 저하로 특성이 제한되고, 99.9 중량부를 초과하는 경우는 상변화가 더디기 때문이다.The oxidized beta-type silicon carbide powder may be included in an amount of 80 to 99.9 parts by weight based on 100 parts by weight of the mixed powder. If the content is less than 80 parts by weight, the properties are limited by the decrease in the number of manufactured products, and if it exceeds 99.9 parts by weight because the phase change is slow.
상기 상변화 촉진 물질의 종류는 전술한 바와 같다.The type of phase change promoting material is as described above.
상기 상변화 촉진 물질은 혼합 분말 100 중량부에 대하여 0.1 내지 10 중량부로 포함되는 것이 좋다. 상기 함량이 0.1 중량부 미만인 경우 균일한 혼합이 어렵고 10 중량부를 초과하는 경우는 다른 화합물을 생성할 수 있기 때문이다.The phase change promoting material may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the mixed powder. This is because when the content is less than 0.1 part by weight, uniform mixing is difficult and when it exceeds 10 parts by weight, other compounds may be produced.
상기 소결조제는 카본, 또는 페놀 수지 등의 열처리 후 카본이 잔류하는 유기 고분자 등을 단독 또는 2종 이상 사용할 수 있으나, 이에 특별히 제한하는 것은 아니다.The sintering aid may be used alone or two or more kinds of organic polymers such as carbon or carbon remaining after heat treatment such as a phenol resin, but are not particularly limited thereto.
상기 소결조제는 혼합 분말 100 중량부에 대하여 1 내지 10 중량부로 포함되는 것이 좋으며, 소결조제의 첨가량이 증가할수록 탄화규소 세라믹스의 미세조직은 망상형 보다는 일반형태의 입자성장 양상을 나타내고, 소결체의 밀도도 증가하여 기공율이 감소할 수 있다.The sintering aid may be included in an amount of 1 to 10 parts by weight based on 100 parts by weight of the mixed powder. As the amount of the sintering aid is increased, the microstructure of the silicon carbide ceramics exhibits a grain growth pattern of a general shape rather than a network shape, and the density of the sintered body. Increasing the porosity may decrease.
또한, 본 발명의 다공질 탄화규소 세라믹스의 밀도 및 기공율을 조절하기 위해 열처리 시 고온에서 분해되는 제거 가능한 유기물 즉, 가소성 물질을 추가로 포함할 수 있다. 상기 가소성 물질이 있던 자리는 열처리 후 기공으로 남아 밀도를 저하시키고 기공율을 증가시킬 수 있다.In addition, to control the density and porosity of the porous silicon carbide ceramics of the present invention may further include a removable organic material, that is, a plastic material that is decomposed at a high temperature during the heat treatment. The site where the plastic material was located may remain as pores after the heat treatment to decrease the density and increase the porosity.
상기 가소성 물질은 종이, 톱밥, 또는 유기고분자 등을 사용할 수 있으나, 이에 특별히 제한하는 것은 아니다. The plastic material may be paper, sawdust, or organic polymer, but is not particularly limited thereto.
본 발명의 다공질 탄화규소 세라믹스의 기공율 제어방법에 따라 제조된 세라믹스의 밀도는 10 내지 80 %이고, 기공율은 20 내지 90 %일 수 있다.The density of the ceramics prepared according to the porosity control method of the porous silicon carbide ceramics of the present invention may be 10 to 80%, the porosity may be 20 to 90%.
본 발명은 또한 산화처리된 베타형 탄화규소 분말, 상변화 촉진 물질 및 알파형 탄화규소 분말을 혼합하여 열처리 하는 단계를 포함하는 다공질 탄화규소 세라믹스의 기공 크기 제어방법에 관한 것이다.The present invention also relates to a method for controlling pore size of porous silicon carbide ceramics comprising the step of mixing and heat-treating an oxidized beta-type silicon carbide powder, a phase change promoting substance, and an alpha-type silicon carbide powder.
본 발명의 다공질 탄화규소 세라믹스의 기공 크기 제어방법은 본 발명의 다공질 탄화규소 세라믹스 제조 시 알파형 탄화규소 분말을 씨드(seed)로 첨가하여 첨가량을 조절함으로써 기공의 크기를 제어하는 것을 특징으로 한다. The method for controlling the pore size of the porous silicon carbide ceramics of the present invention is characterized in that the pore size is controlled by adding an alpha type silicon carbide powder as a seed when the porous silicon carbide ceramics of the present invention are seeded.
상기 베타형 탄화규소 분말의 산화처리는 전술한 바와 같다.The oxidation treatment of the beta-type silicon carbide powder is as described above.
상기 산화처리된 베타형 탄화규소 분말은 혼합 분말 100 중량부에 대하여 90 내지 99.9 중량부로 포함되는 것이 좋다. 상기 함량이 90 중량부 미만인 경우 씨드 량이 증가하여 알파형 원료를 사용한 경우와 조직이 비슷해지고, 99.9 중량부를 초과하는 경우는 씨드량이 적어 첨가 효과가 적어지기 때문이다.The oxidized beta-type silicon carbide powder may be included in an amount of 90 to 99.9 parts by weight based on 100 parts by weight of the mixed powder. If the content is less than 90 parts by weight, the amount of seeds is increased, the structure is similar to the case of using the alpha-type raw material, and if it exceeds 99.9 parts by weight, the seed amount is small and the effect of addition is less.
상기 상변화 촉진 물질의 종류는 전술한 바와 같다.The type of phase change promoting material is as described above.
상기 상변화 촉진 물질은 혼합 분말 100 중량부에 대하여 0.1 내지 10 중량부로 포함되는 것이 좋다. 상기 함량이 0.1 중량부 미만인 경우는 씨드 효과가 적고, 10 중량부를 초과하는 경우는 씨드량이 많아 알파형 원료를 사용한 경우와 조직이 비슷해지기 때문이다.The phase change promoting material may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the mixed powder. If the content is less than 0.1 parts by weight of the seed effect is small, if it exceeds 10 parts by weight because the seed amount is large because the structure is similar to the case of using the alpha-type raw material.
상기 알파형 탄화규소 분말은 10 nm 내지 5 ㎛ 의 입자 크기를 갖는 것을 사용할 수 있으나, 이에 특별히 제한하는 것은 아니다.The alpha-type silicon carbide powder may be used having a particle size of 10 nm to 5 ㎛, but is not particularly limited thereto.
상기 알파형 탄화규소 분말은 혼합 분말 100 중량부에 대하여 0.1 내지 10 중량부로 포함되는 것이 좋으며, 알파형 탄화규소 분말의 함량이 증가할수록 기공율은 비슷하나, 기공의 크기는 보다 작아지는 양상을 나타낸다. The alpha-type silicon carbide powder may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the mixed powder. As the content of the alpha-type silicon carbide powder increases, the porosity is similar, but the pore size becomes smaller.
또한, 본 발명의 다공질 탄화규소 세라믹스의 기공 크기를 제어하기 위해 열처리 시 고온에서 분해되는 제거 가능한 유기물 즉, 가소성 물질을 추가로 포함할 수 있다. In addition, to control the pore size of the porous silicon carbide ceramics of the present invention, it may further include a removable organic material that is decomposed at high temperatures during heat treatment, that is, a plastic material.
상기 가소성 물질의 종류는 전술한 바와 같다.The kind of the plastic material is as described above.
본 발명의 다공질 탄화규소 세라믹스의 기공 크기 제어방법에 따른 세라믹스의 기공 크기는 1 내지 30 ㎛일 수 있다.The pore size of the ceramics according to the pore size control method of the porous silicon carbide ceramics of the present invention may be 1 to 30 ㎛.
본 발명은 또한 본 발명의 다공질 탄화규소 세라믹스를 포함하는 디젤 엔진 분진 필터, 열교환기 발전소 분진 필터, 주물용 필터, 소각용 분진 필터, 고온 부식가스 필터, CVD 또는 버너용 가스분배기, 또는 고온 응용을 위한 수소 분리 및 경량 구조 성분용 막 지지체 중 어느 하나로부터 선택된 제품에 관한 것이다.The invention also provides diesel engine dust filters, heat exchanger power plant dust filters, foundry filters, incineration dust filters, hot corrosive gas filters, gas distributors for CVD or burners, or high temperature applications comprising the porous silicon carbide ceramics of the present invention. And a membrane support for hydrogen separation and lightweight structural components.
본 발명의 다공질 탄화규소 세라믹스는 알파형 탄화규소 입자가 서로 얽혀있는 망상구조를 나타내고 있어 고강도를 유지할 수 있으므로 디젤 엔진 분진 필터, 열교환기 발전소 분진 필터, 주물용 필터, 소각용 분진 필터, 고온 부식가스 필터, CVD 또는 버너용 가스분배기, 또는 고온 응용을 위한 수소 분리 및 경량 구조 성분용 막 지지체 등에 사용할 수 있다.Porous silicon carbide ceramics of the present invention exhibit a network structure in which alpha-type silicon carbide particles are entangled with each other to maintain high strength, so that diesel engine dust filters, heat exchanger power plant dust filters, casting filters, incineration dust filters, and high temperature corrosive gases It can be used in filters, gas distributors for CVD or burners, or membrane supports for hydrogen separation and lightweight structural components for high temperature applications.
이하, 본 발명에 따르는 실시예 통하여 본 발명을 보다 상세히 설명하나, 본 발명의 범위가 하기 제시된 실시예에 의해 제한되는 것은 아니다.Hereinafter, the present invention will be described in more detail through examples according to the present invention, but the scope of the present invention is not limited to the following examples.
<실시예 1> 산화처리된 베타형 탄화규소 분말을 이용한 다공질 탄화규소 세라믹스 제조Example 1 Preparation of Porous Silicon Carbide Ceramics Using Oxidized Beta-Type Silicon Carbide Powder
평균 입자 크기가 50-100㎚인 β-탄화규소(이하 SiC)(Pred material사)를 650 ℃에서 공기 중에서 1시간 산화처리 후 상변화를 촉진하기 위하여 탄화붕소를 1 중량부 첨가하여 혼합과 건조, 분쇄과정을 통해 시작분말을 얻었다. 이렇게 얻은 분말을 금형몰드로 150 MPa의 압력으로 일축가압성형을 하여 성형체를 제작하였다. 성형체를 흑연도가니에 넣고 진공 분위기에서 1450 ℃까지 올리고 분위기를 아르곤 분위기로 바꾸어 2100℃까지 올린 후 10분간 유지한 후 냉각하였다. After mixing β-silicon carbide (SiC) (Pred material) having an average particle size of 50-100 nm for 1 hour in air at 650 ° C, 1 part by weight of boron carbide was added to promote phase change, followed by mixing and drying. The starting powder was obtained by grinding. The powder thus obtained was uniaxially press-molded at a pressure of 150 MPa with a mold mold to prepare a molded body. The molded body was placed in a graphite crucible and the atmosphere was changed to 1450 ° C. in a vacuum atmosphere, and the atmosphere was changed to an argon atmosphere, raised to 2100 ° C., and then cooled for 10 minutes.
열처리된 시편은 상대밀도 53%, 강도는 45MPa, 평균 기공 크기는 7.26㎛의 값을 보였다. The heat treated specimens had a relative density of 53%, strength of 45 MPa, and average pore size of 7.26 ㎛.
미세구조는 급격한 입자 성장이 진행되면서 도 1의 망상구조를 보였다. The microstructure showed the network structure of FIG. 1 as the rapid grain growth progressed.
<비교예 1> 산화처리하지 않은 베타형 탄화규소 분말을 이용한 다공질 탄화규소 세라믹스 제조Comparative Example 1 Preparation of Porous Silicon Carbide Ceramics Using Beta-Type Silicon Carbide Powder without Oxidation
산화처리하지 않은 베타형 탄화규소 분말에 탄화붕소를 1 중량부 첨가하여 실시예 1과 동일한 방법에 따라 시편을 제조하였다.The specimen was prepared in the same manner as in Example 1 by adding 1 part by weight of boron carbide to the non-oxidized beta-type silicon carbide powder.
도 2에 나타난 바와 같이, 시편의 미세조직은 74%의 높은 밀도를 나타냈으며, 도 1과 같이 입자가 성장된 망상구조의 고 기공율의 다공질 탄화규소 세라믹스를 제조하기가 어려웠다. 이는 사용한 원료인 β-탄화규소(이하 SiC)(Pred material사) 분말에는 미반응된 탄소가 3% 정도 존재하고 이것이 다공질체 제조에 악영향을 주는 것으로 생각되었다.As shown in FIG. 2, the microstructure of the specimen exhibited a high density of 74%, and it was difficult to prepare porous silicon carbide ceramics having high porosity of the network structure in which the particles were grown as shown in FIG. 1. It was thought that about 3% of unreacted carbon was present in the powder of β-silicon carbide (SiC) (Pred material), which is a raw material used, and this was considered to adversely affect the preparation of the porous body.
<실시예 2> 산화물이 적은 베타형 탄화규소를 이용한 세라믹스의 제조Example 2 Fabrication of Ceramics Using Beta-Type Silicon Carbide with Less Oxide
평균 입자 크기가 0.3㎛인 고순도 β-탄화 규소(일본 Ibiden Co. Ltd) 분말을 실시예 1과 같이 산화처리한 후 상변화를 촉진하기 위하여 탄화붕소를 1 중량부 첨가하여 혼합과 건조, 분쇄과정을 통해 두 종류의 시작분말을 얻었다. 이렇게 얻은 분말을 금형 몰드 넣고 150MPa 압력으로 프레스(press) 성형을 하여 디스크형의 성형체를 제작하였다. After oxidizing high purity β-silicon carbide (Japan Ibiden Co. Ltd) powder having an average particle size of 0.3 μm as in Example 1, 1 part by weight of boron carbide was added to promote phase change, followed by mixing, drying, and grinding. Through this, two kinds of starting powders were obtained. The powder thus obtained was placed in a mold mold and press-molded at 150 MPa pressure to produce a disk-shaped molded body.
상기 성형체를 흑연도가니에 넣고 진공 분위기에서 1450℃까지 올리고 아르곤 분위기에서 1450℃부터 2100℃까지 올린 후 30분간 유지한 후 냉각하였다. The molded product was placed in a graphite crucible and heated to 1450 ° C. in a vacuum atmosphere, raised from 1450 ° C. to 2100 ° C. in an argon atmosphere, and then cooled for 30 minutes.
도 3에 나타난 바와 같이, 산화처리한 분말을 사용한 경우 분말 표면의 산화규소에 의하여 소결이 억제되면서 상변화가 일어나 급격한 입성장이 진행되면서 망상구조를 가진 밀도 52%, 기공률 48%의 다공성의 탄화규소의 소결체가 제조되었다. As shown in FIG. 3, when the oxidized powder is used, sintering is inhibited by silicon oxide on the surface of the powder, so that phase change occurs and rapid grain growth proceeds, and the porous silicon carbide has a density of 52% and a porosity of 48%. The sintered compact of was manufactured.
<비교예 2> 산화처리하지 않은 탄화규소 분말을 이용한 세라믹스 제조Comparative Example 2 Preparation of Ceramics Using Silicon Carbide Powders
상기 실시예 2의 탄화규소 분말에 산화처리하지 않는 것을 제외하고는 실시예 2와 동일한 방법에 따라 시편을 제조하였다.A specimen was prepared in the same manner as in Example 2 except that the silicon carbide powder of Example 2 was not oxidized.
도 4에 나타난 바와 같이, 산화처리하지 않은 분말을 사용한 소결체의 경우 소결이 일부 진행되어 상대밀도는 82%였으며 미세조직은 일반형태의 입자성장 양상을 보였다. As shown in FIG. 4, in the case of the sintered body using the non-oxidized powder, the sintering was partially performed, and the relative density was 82%, and the microstructure showed a general grain growth pattern.
<실시예 3> 소결조제 첨가에 따른 탄화규소 세라믹스의 밀도 및 기공율 제어Example 3 Density and Porosity Control of Silicon Carbide Ceramics by Addition of Sintering Aid
탄소의 첨가에 따라 탄화규소 소결체의 변화를 보기 위하여 상기 실시예1의 방법으로 산화처리된 분말에 탄화붕소 1 중량부와 소결조제인 액상 카본 수지를 이용하여 탄소를 1 ~ 5 중량부로 첨가하여 실험하였다. In order to see the change of silicon carbide sintered body according to the addition of carbon, 1 to 5 parts by weight of carbon was added to the powder oxidized by the method of Example 1 by using 1 part by weight of boron carbide and a liquid carbon resin as a sintering aid. It was.
도 5 및 6에 나타난 바와 같이, 소결조제로서 첨가된 탄소의 양이 증가함에 따라 탄화규소 미세조직은 도 1의 망상형보다는 일반형태의 입자성장 양상을 보이며 소결체의 밀도도 증가하여 기공율은 감소하였다. As shown in FIGS. 5 and 6, as the amount of carbon added as the sintering aid increases, the silicon carbide microstructure shows the grain growth of the general form rather than the network type of FIG. 1, and the density of the sintered body is also increased to decrease the porosity. .
<실시예 4> 씨드 첨가에 따른 탄화규소 세라믹스의 기공 크기 제어 Example 4 Pore Size Control of Silicon Carbide Ceramics According to Seed Addition
α-탄화규소 첨가에 따른 탄화규소 소결체의 미세조직을 비교하기 위해, 상기 실시예 1의 방법으로 실험을 진행하되 α-탄화규소(Norton사)를 2 ~ 10 중량부로 하여 추가로 첨가하여 각각 소결하였다. In order to compare the microstructure of the silicon carbide sintered body according to the addition of α-silicon carbide, the experiment was conducted in the same manner as in Example 1, but α-silicon carbide (Norton) was added in an amount of 2 to 10 parts by weight, followed by sintering. It was.
도 7 및 8에 나타난 바와 같이, 소결체는 α-탄화규소 첨가량이 증가함에 따라 더욱 조밀한 망상구조를 보였다. 즉 기공 크기는 α-탄화규소의 첨가량이 많아짐에 따라 작아지는 경향을 보였다. α-탄화규소의 첨가량에 따른 기공율은 53.5%에서 55.5%로 비슷하였으며 평균 기공 크기는 2 중량부 일 때 3.29㎛, 5 중량부 일 때, 2.15㎛ 10 중량부 일 때, 2.11㎛ 값을 보였다. As shown in Figures 7 and 8, the sintered compact showed a more dense network structure as the amount of α-silicon carbide added. That is, the pore size tended to decrease as the amount of α-silicon carbide added. The porosity of the addition of α-silicon carbide was similar from 53.5% to 55.5%, and the average pore size was 3.29㎛ at 2 parts by weight, 2.15㎛ at 5 parts by weight, and 2.11㎛ at 10 parts by weight.
또한, 도 9에 나타난 바와 같이, α-탄화규소 첨가량이 증가함에 따라 더욱 조밀한 망상구조를 나타내나 강도는 33 내지 36MPa로 유사하였다. In addition, as shown in Fig. 9, as the amount of α-silicon carbide addition increased, it showed a denser network structure, but the strength was similar to 33 to 36 MPa.
본 발명의 다공질 탄화규소 세라믹스는 망상구조에 의한 높은 강도를 가지고 있어 디젤 엔진 분진 필터, 열교환기 발전소 분진 필터, 주물용 필터, 소각용 분진 필터, 고온 부식가스 필터, CVD 또는 버너용 가스분배기, 또는 고온 응용을 위한 수소 분리 및 경량 구조 성분용 막 지지체 등에 사용할 수 있다.The porous silicon carbide ceramics of the present invention have a high strength due to the network structure, so that diesel engine dust filters, heat exchanger power plant dust filters, casting filters, incineration dust filters, hot corrosion gas filters, CVD or burner gas distributors, or It can be used for hydrogen separation for high temperature applications and membrane support for lightweight structural components.

Claims (19)

  1. 판상모양의 입자가 서로 얽혀있는 망상구조의 다공질 탄화규소 세라믹스.Porous silicon carbide ceramics with a network of plate-shaped particles intertwined.
  2. 제1항에 있어서,The method of claim 1,
    알파형 폴리타입을 30 내지 100% 포함하는 다공질 탄화규소 세라믹스.Porous silicon carbide ceramics containing 30 to 100% of an alpha type polytype.
  3. 제1항에 있어서,The method of claim 1,
    평균 기공 크기가 1 내지 30 ㎛인 다공질 탄화규소 세라믹스.Porous silicon carbide ceramics having an average pore size of 1 to 30 μm.
  4. 베타형 탄화규소 분말을 산화처리하는 단계; 및Oxidizing the beta-type silicon carbide powder; And
    상기 산화처리된 베타형 탄화규소 분말의 열처리 단계를 포함하는 다공질 탄화규소 세라믹스의 제조방법.Method for producing a porous silicon carbide ceramics comprising the heat treatment step of the oxidation-treated beta-type silicon carbide powder.
  5. 제4항에 있어서,The method of claim 4, wherein
    베타형 탄화규소 분말은 10 nm 내지 2 ㎛의 입자 크기를 갖는 다공질 탄화규소 세라믹스의 제조방법.Beta type silicon carbide powder is a method for producing porous silicon carbide ceramics having a particle size of 10 nm to 2 ㎛.
  6. 제4항에 있어서,The method of claim 4, wherein
    산화처리는 공기 중에서 300 내지 1400 ℃에서 열처리하는 것인 다공질 탄화규소 세라믹스의 제조방법.Oxidation is a method for producing porous silicon carbide ceramics which is heat-treated at 300 to 1400 ℃ in air.
  7. 제4항에 있어서,The method of claim 4, wherein
    열처리는 1900 내지 2200 ℃에서 실시하는 다공질 탄화규소 세라믹스의 제조방법.Heat treatment is a method for producing porous silicon carbide ceramics carried out at 1900 to 2200 ℃.
  8. 제4항에 있어서,The method of claim 4, wherein
    열처리 시 상변화 촉진 물질을 더 포함하는 다공질 탄화규소 세라믹스의 제조방법.Method for producing porous silicon carbide ceramics further comprising a phase change promoting material during heat treatment.
  9. 제8항에 있어서,The method of claim 8,
    상변화 촉진 물질은 B, Al 및 철계 금속으로 이루어진 군으로부터 선택된 하나 이상의 금속 또는 이들의 염을 포함하는 다공질 탄화규소 세라믹스의 제조방법.Phase change promoting material is a method for producing porous silicon carbide ceramics comprising at least one metal selected from the group consisting of B, Al and iron-based metals or salts thereof.
  10. 제9항에 있어서,The method of claim 9,
    상변화 촉진 물질은 베타형 탄화규소 분말 100 중량부에 대하여 0.1 내지 10 중량부로 포함되는 다공질 탄화규소 세라믹스의 제조방법.Phase change promoting material is a method for producing porous silicon carbide ceramics is contained in 0.1 to 10 parts by weight with respect to 100 parts by weight of the beta-type silicon carbide powder.
  11. 산화처리된 베타형 탄화규소 분말, 상변화 촉진 물질 및 소결조제를 혼합하여 열처리하는 단계를 포함하는 다공질 탄화규소 세라믹스의 밀도 및 기공율 제어방법.A method of controlling the density and porosity of porous silicon carbide ceramics comprising the step of mixing and heat-treating an oxidized beta-type silicon carbide powder, a phase change promoting substance, and a sintering aid.
  12. 제11항에 있어서,The method of claim 11,
    소결조제는 카본 또는 열처리 후 카본이 잔류하는 유기 고분자로 이루어진 군으로부터 선택된 하나 이상을 포함하는 다공질 탄화규소 세라믹스의 밀도 및 기공율 제어방법.The sintering aid is a method of controlling the density and porosity of porous silicon carbide ceramics comprising at least one selected from the group consisting of carbon or an organic polymer in which carbon remains after heat treatment.
  13. 제11항에 있어서,The method of claim 11,
    소결조제는 혼합 분말 100 중량부에 대하여 1 내지 10 중량부로 포함되는 다공질 탄화규소 세라믹스의 밀도 및 기공율 제어방법.Sintering aid is a density and porosity control method of the porous silicon carbide ceramics is contained in 1 to 10 parts by weight with respect to 100 parts by weight of the mixed powder.
  14. 제11항에 있어서,The method of claim 11,
    이론 밀도가 10 내지 80 %인 다공질 탄화규소 세라믹스의 밀도 및 기공율 제어방법.A density and porosity control method of porous silicon carbide ceramics having a theoretical density of 10 to 80%.
  15. 제11항에 있어서,The method of claim 11,
    기공율은 20 내지 90%인 다공질 탄화규소 세라믹스의 밀도 및 기공율 제어방법.A method of controlling the density and porosity of porous silicon carbide ceramics having a porosity of 20 to 90%.
  16. 산화처리된 베타형 탄화규소 분말, 상변화 촉진 물질 및 알파형 탄화규소 분말을 혼합하여 열처리하는 단계를 포함하는 다공질 탄화규소 세라믹스의 기공 크기 제어방법.A method of controlling pore size of porous silicon carbide ceramics, comprising the step of mixing and heat-treating an oxidized beta-type silicon carbide powder, a phase change promoting substance, and an alpha-type silicon carbide powder.
  17. 제16항에 있어서,The method of claim 16,
    알파형 탄화규소 분말은 베타형 탄화규소 분말 100 중량부에 대하여 0.1 내지 10 중량부로 포함되는 다공질 탄화규소 세라믹스의 기공 크기 제어방법.Alpha-type silicon carbide powder is 0.1 to 10 parts by weight based on 100 parts by weight of the beta-type silicon carbide powder pore size control method of the ceramic ceramics.
  18. 제16항에 있어서,The method of claim 16,
    기공 크기는 1 내지 30 ㎛인 다공질 탄화규소 세라믹스의 기공 크기 제어방법.A pore size control method for porous silicon carbide ceramics having a pore size of 1 to 30 μm.
  19. 제1항의 다공질 탄화규소 세라믹스를 포함하는 디젤 엔진 분진 필터, 열교환기 발전소 분진 필터, 주물용 필터, 소각용 분진 필터, 고온 부식가스 필터, CVD 또는 버너용 가스분배기, 또는 고온 응용을 위한 수소 분리 및 경량 구조 성분용 막 지지체 중 어느 하나로부터 선택된 제품.Diesel engine dust filter comprising the porous silicon carbide ceramics of claim 1, heat exchanger power plant dust filter, casting filter, incineration dust filter, hot corrosive gas filter, gas distributor for CVD or burner, or hydrogen separation for high temperature application and An article selected from any one of the membrane supports for lightweight structural components.
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