WO2012038671A3 - Method for manufacturing a substrate including organised metal islands - Google Patents

Method for manufacturing a substrate including organised metal islands Download PDF

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Publication number
WO2012038671A3
WO2012038671A3 PCT/FR2011/052210 FR2011052210W WO2012038671A3 WO 2012038671 A3 WO2012038671 A3 WO 2012038671A3 FR 2011052210 W FR2011052210 W FR 2011052210W WO 2012038671 A3 WO2012038671 A3 WO 2012038671A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
organised
manufacturing
layer
substrate including
Prior art date
Application number
PCT/FR2011/052210
Other languages
French (fr)
Other versions
WO2012038671A2 (en
Inventor
Roland Madar
Bernard Chenevier
Original Assignee
Centre National De La Recherche Scientifique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National De La Recherche Scientifique filed Critical Centre National De La Recherche Scientifique
Publication of WO2012038671A2 publication Critical patent/WO2012038671A2/en
Publication of WO2012038671A3 publication Critical patent/WO2012038671A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
    • B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/755—Nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B01J37/0215—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
    • B01J37/349—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of flames, plasmas or lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention relates to a method for manufacturing a substrate including organised islands consisting of a metal such as Ni, Pt, Ir, or Pd, suitable for the controlled growth of nanowires/nanotubes, said method including the following steps: forming a layer of the metal on an exposed top surface of silicon; carrying out annealing in order to completely convert the metal layer into a layer of a silicide of said metal; exposing the top surface to a low-temperature oxygen plasma in order to form an oxysilicide of the metal; and exposing the top surface to a low-temperature hydrogen plasma, which results in obtaining grains of the metal in a silicon oxide layer.
PCT/FR2011/052210 2010-09-24 2011-09-23 Method for manufacturing a substrate including organised metal islands WO2012038671A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1057685A FR2965395B1 (en) 2010-09-24 2010-09-24 METHOD FOR MANUFACTURING SUBSTRATE COMPRISING ORGANIZED METALLIC ILOTS
FR1057685 2010-09-24

Publications (2)

Publication Number Publication Date
WO2012038671A2 WO2012038671A2 (en) 2012-03-29
WO2012038671A3 true WO2012038671A3 (en) 2012-09-13

Family

ID=43902944

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2011/052210 WO2012038671A2 (en) 2010-09-24 2011-09-23 Method for manufacturing a substrate including organised metal islands

Country Status (2)

Country Link
FR (1) FR2965395B1 (en)
WO (1) WO2012038671A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006133949A2 (en) * 2005-06-17 2006-12-21 Interuniversitair Microelektronica Centrum Formation of metal-containing nanoparticles for use as catalysts in carbon nanotube synthysis
WO2008106219A1 (en) * 2007-03-01 2008-09-04 Hewlett-Packard Development Company, L.P. Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006133949A2 (en) * 2005-06-17 2006-12-21 Interuniversitair Microelektronica Centrum Formation of metal-containing nanoparticles for use as catalysts in carbon nanotube synthysis
WO2008106219A1 (en) * 2007-03-01 2008-09-04 Hewlett-Packard Development Company, L.P. Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SATO HIDEKI ET AL: "Effect of catalyst oxidation on the growth of carbon nanotubes by thermal chemical vapor deposition", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 100, no. 10, 30 November 2006 (2006-11-30), pages 104321 - 104321, XP012089029, ISSN: 0021-8979, DOI: DOI:10.1063/1.2364381 *
WEN ET AL: "Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 82, no. 3-4, 1 December 2005 (2005-12-01), pages 221 - 227, XP005183007, ISSN: 0167-9317, DOI: DOI:10.1016/J.MEE.2005.07.028 *

Also Published As

Publication number Publication date
WO2012038671A2 (en) 2012-03-29
FR2965395A1 (en) 2012-03-30
FR2965395B1 (en) 2012-10-12

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