WO2012037191A2 - Improved photovoltaic cell assembly and method - Google Patents
Improved photovoltaic cell assembly and method Download PDFInfo
- Publication number
- WO2012037191A2 WO2012037191A2 PCT/US2011/051509 US2011051509W WO2012037191A2 WO 2012037191 A2 WO2012037191 A2 WO 2012037191A2 US 2011051509 W US2011051509 W US 2011051509W WO 2012037191 A2 WO2012037191 A2 WO 2012037191A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive
- layer
- conductive elements
- photovoltaic
- cell
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 210000004027 cell Anatomy 0.000 claims description 221
- 239000000463 material Substances 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 4
- 239000012815 thermoplastic material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 177
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 12
- -1 copper chalcogenide Chemical class 0.000 description 12
- 230000000712 assembly Effects 0.000 description 11
- 238000000429 assembly Methods 0.000 description 11
- 239000010949 copper Substances 0.000 description 10
- 239000004615 ingredient Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000013459 approach Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000012512 characterization method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical class [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 150000004763 sulfides Chemical class 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical class [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229920002397 thermoplastic olefin Polymers 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Definitions
- the present invention relates to an improved photovoltaic (PV) cell assembly, more particularly to an improved photovoltaic cell assembly that interconnects a plurality of cells without solder or conductive adhesive.
- PV photovoltaic
- Photovoltaic articles often comprise a number of electrically interconnected photovoltaic cells. In addition to ensuring electrical interconnection, these cells are sometimes packaged to protect the cells from damage from handling or the environment.
- the conventional approach to electrical interconnection of photovoltaic cells is the so-called string & tab method, in which solar cells are connected to each other using tin or solder coated flat wire (bus) ribbons and bonded by soldering and/or other adhesive material such as conductive epoxy.
- the wire ribbon is typically bonded to bus bar locations on a conductive grid that is applied to the surface of the cell. It is believed that the cross section of the wire may be limited such that thicker wires are too stiff and thin and wide wires obscure too much light.
- the present invention is directed to an improved photovoltaic cell assembly that addresses at least one or more of the issues described in the above paragraphs.
- the inventive photovoltaic cell assembly is constructed and configured in such a way that conductive adhesive and/or solder is not required to hold the cell strings together. It is contemplated that the cell string is encapsulated in a polymer laminate during or immediately following the application of conductive wires.
- conductive adhesive may be desirous, because conductive adhesive can be expensive and requires substantial down time for maintenance and cleaning.
- a further advantage contemplated may be improved resistance to thermal cycling and damp heat treatment over adhesive or soldered connections that may be susceptible to degradation under these types of environmental stresses.
- the photovoltaic cell assembly described herein also lacks large bus ribbons that obstruct light from entering the cell.
- the absence of the bus ribbons also may render the PV device aesthetically more appealing versus conventional products prepared using the string and tab approach.
- the use of this approach may reduce the amount of silver conductive ink in grid application via elimination of large silver bus bars that are generally applied for photovoltaic cell assemblies prepared using string and tab approach.
- a further unexpected advantage of this approach may be that solar cell strings (e.g. multiple cells, for example a 5-cell assembly/string) assembled using the present invention may repeatedly exhibit higher efficiency and current generated and lower series resistance relative to the individual cells used in their production because the addition of a conductive element lowers resistance relative to the individual cells that do not have the conductive element.
- 5-cell strings connected with flat wire ribbon and conductive epoxy have demonstrated the opposite tendency, with lower efficiency and current and higher series resistance relative to the individual component cells.
- a photovoltaic cell assembly including at least a plurality of photovoltaic cells, the cells including at least: a photoactive portion sandwiched between; a top electrically conductive structure on some regions of a top surface of the photoactive portion leaving exposed top surface on other regions; and an opposing conductive substrate layer; wherein at least a portion of a peripheral edge portion of the cells include a non-conductive layer portion; a plurality of conductive elements; a first encapsulant layer in contact with the top electrically conductive structure and the exposed top surface of the photoactive portion; and a second encapsulant layer in contact with the opposing conductive substrate layer; wherein one end of the plurality of conductive elements contact the top electrically conductive structure and the exposed top surface and an opposing end of the plurality of conductive elements contact the conductive substrate layer of an adjacent photovoltaic cell and both ends are held in contact to the cell layers by the respective encapsulant layer.
- the invention may be further characterized by one or any combination of the features described herein, such as the collection structure comprises a series of substantially parallel lines of a material with lower sheet resistance than the exposed top surface; the series of substantially parallel lines is generally perpendicular to the direction of the plurality of conductive elements; the number of conductive elements and the cross section width of the conductive elements is selected so that a total power loss due to line resistance of the conductive elements and the shading of the conductive elements is less than 6% according to the equation:
- p [ ⁇ p(l/n)(/) ⁇ /(V)(A)] + [n(/)(d)]
- I the current generated by the PV device
- n the number of conductive elements
- / the length of the conductive elements
- V the voltage generated by the PV device
- A the cross sectional area of the conductive elements
- /' the length of the conductive element that covers the top surface of the PV cell
- d the diameter of the conductive element
- a total surface area of the collection structure and the plurality of conductive elements is less than 4% of the total surface area of the PV cells
- the power loss contributed by shading is between 30-70% of the total power loss caused by shading and resistive losses
- the cross section width of the conductive elements is greater than the thickness of the first and second encapsulant layer
- a cross section width of the conductive elements is less than 0.5 mm and greater than 0.1mm
- the conductive elements are connected to terminal bars at both ends of the assembly; the conductive elements
- a method of forming a photovoltaic assembly including at least the steps of: providing a first encapsulant layer and a second encapsulant layer; providing a series of substantially parallel conductive elements; providing a plurality of photovoltaic cells comprising a photoactive layer, an opposing conductive substrate layer and a top conductive layer comprising both a transparent conductive layer and a collection structure; connecting the plurality of photovoltaic cells in top-to-bottom fashion; the collection structure comprises a series of substantially parallel lines and a peripheral edge portion of the cells include a non-conductive layer portion and one end of the plurality of conductive elements contact both the transparent conductive layer and the collection structure and an opposing end of the plurality of conductive elements contact the conductive substrate layer of an adjacent photovoltaic cell and both ends are held in contact to the cell layers by the respective encapsulant layer
- FIG. 1 is a top perspective view of one illustrative example of the present invention.
- Fig. 2 is a side view of the example shown in Fig. 1.
- Fig. 3 is an exploded side view of the example shown in Fig. 1.
- Fig. 4 is a more detailed side view of the example shown in Fig. 1.
- Fig. 5 is a top perspective view of a single cell.
- Fig. 5 A-A is a detailed sectional view of the cell of Fig. 5, illustrating example layers.
- Fig. 6 is a top perspective view of a PV device with a 4-cell photovoltaic cell assembly included therein.
- Fig. 7 is a top perspective view of according to Example 1.
- Fig. 8 is a top perspective view of according to Example 2.
- FIG. 9 is a top perspective view of according to Examples 3 and 4.
- Fig. 10 is a top perspective view of according to Example 5.
- Fig. 11 is a graphical example of the effect of wire resistivity on the series resistance and normalized efficiency of cell assemblies, related to Example 5.
- Fig. 12 is a graphical example showing an example of how power loss
- Fig. 13 is a table related to Example 1.
- Fig. 14 is a table related to Example 3.
- Fig. 15 is a table related to Example 4.
- Fig. 16 is a table related to Examples 6 and 7.
- Figs. 17A-C illustrates l-V exemplary characterization data for the individual cells and the interconnected assembly.
- the present invention relates to an improved photovoltaic cell assembly 10, as illustrated in Figs.1 - 5A-A and 7-10, and can be described generally as an assembly of a number of components and component assemblies that functions to provide electrical energy when subjected to solar radiation (e.g. sunlight).
- the improved photovoltaic cell assembly 10 may be incorporated into a larger photovoltaic device, for example a solar shingle 00 as shown in Fig. 6.
- an improved photovoltaic cell assembly 10 that includes at least a plurality of photovoltaic cells 20, first and second encapsulant layers 40, 50, and a conductive element 60 (preferably a plurality of conductive elements 60) that electrically connects the photovoltaic cells 20.
- the plurality of photovoltaic cells may be constructed of a plurality adjoining of layers. These layers can be further defined (e.g. from the bottom up) to include at least: a conductive substrate layer 22; a photoactive layer 24; and a top electrical collection structure 28. It is also preferred that at least along a portion of the peripheral edge of the cells a non-conductive layer portion 30 is included, for example as illustrated in Fig. 4.
- the assembly 10 is configured such that one end 62 of the conductive element 60 is in contact with both the collection structure 28 and a top surface 26 of the photoactive layer 24 and an opposing end 64 of the conductive element 60 is in contact with the conductive substrate layer 22 of an adjacent photovoltaic cell 20.
- both ends 62, 64 are held in contact to the cell layers by the respective encapsulant layer.
- the photovoltaic cell 20 contemplated in the present invention may be constructed of any number of known photovoltaic cells commercially available or may be selected from some future developed photovoltaic cells.
- the conductive substrate layer 22 functions similarly to the top conductive layer 24, in that it conducts the electrical energy produced by the photoactive portion.
- the conductive substrate layer 22 may be rigid or flexible, but desirably is flexible, particularly in those embodiments in which the resultant photovoltaic device may be used in combination with non-flat surfaces.
- the conductive substrate layer can be a single integral layer or can be formed from one or more layers formed from a wide range of materials, including metals, metal alloys, intermetallic compositions, and or combinations of these.
- layer 22 is typically a metal foil. Examples include metal foil comprising Cu, Al, Ti, Mo or stainless steel.
- this conductive substrate layer is formed of a stainless steel and the photoactive portion 24 is formed above the substrate layer, although other configurations are contemplated and do not necessarily effect the concepts of cell interconnect presented herein.
- stainless steel is preferred.
- the conductive substrate layer 22 can be coated on one or both sides with a wide range of electrically conductive materials, including one or more of Cu, Mo, Ag, Al, Cr, Ni, Ti, Ta, Nb, W and/or combinations of these. Conductive compositions incorporating Mo may be used in an illustrative embodiment.
- a back contact layer 122 formed on the conductive substrate layer proximal to the photoactive layer helps to isolate the photoactive layer 24 from the support to minimize migration of support constituents into the photoactive layer.
- the back contact layer 22 can help to block the migration of Fe and Ni constituents of a stainless steel support into the photoactive layer 24.
- Conductive metal layers formed on one or both sides of the conductive substrate layer 22 can also can protect the substrate layer against degradation that could be caused during formation of the photoactive layer 24, for instance by protecting against S or Se if these are used in the formation of photoactive region 24.
- the photoactive layer or portion 24 of the photovoltaic cell 20 contains the material which converts light energy to electrical energy. Any material known to provide that function may be used including crystalline silicon, amorphous silicon, CdTe, GaAs, dye-sensitized solar cells (so-called Graetzel cells), organic/polymer solar cells, or any other material that converts sunlight into electricity via the photoelectric effect.
- the photoactive cell is preferably a IB-IIIA-chalcogenide-based cell, such as IB-IIIA- selenides, IB-IIIA-sulfides, or IB-IIIA-setenide sulfides (i.e.
- absorber layer is a IB-IIIA chalcogenide, preferably a copper chalcogenide). More specific examples include copper indium selenides, copper indium gallium selenides, copper gallium selenides, copper indium sulfides, copper indium gallium sulfides, copper gallium selenides, copper indium sulfide selenides, copper gallium sulfide selenides, and copper indium gallium sulfide selenides (all of which are referred to herein as CIGS). These can also be represented by the formula Culn ( i. X )Ga x Se(2 ⁇ )S y where x is 0 to 1 and y is 0 to 2.
- the copper indium selenides and copper indium gallium selenides are preferred.
- the portion 24 may comprise multiple layers in addition to the absorber layer such as one or more of emitter (buffer) layers, conductive layers (e.g. transparent conductive layers) and the like as is known in the art to be useful in CIGS based cells are also contemplated herein. These cells may be flexible or rigid and come in a variety of shapes and sizes, but generally are, fragile and subject to environmental degradation.
- the photovoltaic cell 20 is a cell that can bend without substantial cracking and/or without significant loss of functionality.
- Exemplary photovoltaic cells are taught and described in a number of US patents and publications, including US3767471 , US4465575, US20050011550 A1 , EP841706 A2, US20070256734 a1, EP1032051A2, JP2216874, JP2143468, and JP10189924a, incorporated hereto by reference for all purposes.
- the photoactive layer 24 may be further constructed of any number of layers, for example: a back contact layer 122 (typically Mo); an absorber layer 124 (typically CulnGaSe(S)); a buffer layer 126 (typically CdS); a window layer 128 (typically ZnO); and transparent conductive layer 130 (typically indium tin oxide (ITO or aluminum zinc oxide (AZO)).
- a back contact layer 122 typically Mo
- an absorber layer 124 typically CulnGaSe(S)
- a buffer layer 126 typically CdS
- a window layer 128 typically ZnO
- transparent conductive layer 130 typically indium tin oxide (ITO or aluminum zinc oxide (AZO)
- the photovoltaic cells 20 may be formed from other known solar cell technology. Examples of these include amorphous silicon or cadmium telluride based solar cell devices. Additionally, components within the photovoltaic cells 20 as described above can be substituted for alternative materials.
- the buffer layer 126 can be for sulfides, selenides or oxides of Cd, Zn, In, Sn and combinations thereof;
- An optional window layer compromised of a resistance transparent oxide of for example Zn, Cd, In, Sn may be included between the buffer region 126 and the transparent conductive layer 130.
- the window layer is intrinsic zinc oxide.
- the transparent conductive layer 130 may be situated as the top layer of the photoactive layer 24.
- a wide variety of transparent conducting oxides or combinations of these may be incorporated into the transparent conductive layer.
- the transparent conductive layer 130 is a transparent conductive oxide (TCO), with representative examples including fluorine-doped tin oxide, tin oxide, indium oxide, indium tin oxide (ITO), aluminum doped zinc oxide (AZO), zinc oxide, combinations of these, and the like.
- the transparent conductive layer is indium tin oxide.
- Transparent conductive layers may be conveniently formed via sputtering or other suitable deposition technique.
- a distinctive transparent conductive layer 130 may not be required.
- GaAs type cells typically do not require a transparent conductor as the GaAs layer may be sufficiently conductive.
- the layer that is immediately below the collection structure 28 should be considered the top surface 26 of the cell 20.
- the top collection structure 28 functions to collect the electrical energy produced by the photoactive portion 22 and focus it into conductive paths.
- the collection structure 28 may be deposited over the photoactive layer 24 (e.g. on the top surface 26) to reduce the sheet resistance of this layer (e.g. TCO layer 130).
- the collection structure 28 typically comprises optically opaque materials and may be applied as a series of substantially parallel conductive traces (although other configurations are contemplated and do not necessarily effect the concept of cell interconnect presented herein) with spaces between the traces so that the grid occupies a relatively small footprint on the surface.
- the collection structure occupies about 5% or less, even about 2% or less, or even about 1% or less of the total surface area associated with light capture to allow the photoactive materials to be exposed to incident light.
- the collection structure 28 preferably includes conductive metals such as Ag, Al, Cu, Cr, Ni, Ti, Ta, and/or combinations thereof.
- the grid has a dual layer construction comprising nickel and silver.
- the collection structure can be formed by a variety of techniques including screen-printing, ink-jet printing, electroplating, and metallization through a shadow mask using physical vapor deposition techniques such as evaporation or sputtering.
- the non-conductive layer portion 30 functions as an insulator or a dielectric that electrically isolates the conductive elements 60 from the edges of the solar cells. It is contemplated that the presence of the non-conductive layer portion reduces the occurrence of electrical shorts at the edge of the solar cell that may be caused by contact with the conductive elements 60. Furthermore, the non-conductive layer portion 30 can function as an adhesive to secure the plurality of conductive elements 60 in place during fabrication of the cell assembly prior to application of the encapsulant layers.
- the insulator can be applied to the solar cell or to the conductive elements 60 at one or both of the leading or trailing edges of each individual solar cell in the solar cell assembly.
- the insulator can be formed as discrete regions along the edge of the device at the locations where the conductive elements cross the edge of the solar cell, or it can be applied as a single layer along the entire length or a substantial portion of the edge of the cell 20, so that it may comprise a discrete layer between the cell and the conductive elements 60.
- the insulator may be of a type of synthetic polymer that can be deposited as a liquid and cured or cross-linked to form a solid material. Curing or cross- linking can be achieved via the application of thermal or ultraviolet (UV) energy, for example.
- UV-curable compositions it is desirable that the curing process can be carried out in a short timeframe, such as less than 10 seconds, and more specifically can be less than about 3 seconds.
- photocurable polymers require energy of at least 300 mJ/cm 2 and more typically about 500-1200 mJ/cm 2 of UV energy in the 200- 400 nm range.
- Exemplary embodiments include acrylate and epoxy resin based compositions.
- the non-conductive layer portion 30 can be applied as a solid material, such as in tape form.
- Suitable alternatives may include fluorocarbon polymers, such as ethylene tetrafluoroethylene (ETFE), curable insulating polymers that can be coated on the cell or interconnect material or inorganic dielectric material that can be applied to the solar cell or interconnect material. It is contemplated that it could also be substituted for the material used as the encapsulant layers 40, 50, such as polyethylene film.
- ETFE ethylene tetrafluoroethylene
- the non-conductive layer portion 30 is a liquid dielectric epoxy composition that is cured via UV radiation.
- the portion 30 is a polyimide tape.
- Kapton® tape offered by Dupont®.
- the non-conductive layer portion 30 can exhibit a dielectric constant greater than about 2 and can be even greater than about 4.
- Exemplary electrically insulating materials have a dielectric constant greater than about 4.8 and volume resistivity greater than about 3x10 14 ⁇ -cm.
- the conductive element(s) 60 function as an electrical bridge between photovoltaic cells 20. It is contemplated in the present invention that, the electrical bridge is formed between the top of one cell (e.g. collection structure 28 and/or top surface 26) and the conductive substrate layer 26 of an adjoining cell. It is desirable that these elements have a relatively low electrical resistance (preferably less than about 1.0 ⁇ /m, more preferably less than about 0.33 ⁇ /m, most preferably less than 0.15 ⁇ /m).
- Fig. 11 shows an example of the effect of wire resistivity on the series resistance and normalized efficiency of cell assemblies.
- conductive elements may be in the form of traditional metallic wires (solid or plated), conductive foils, coated polymeric strands, or any like structure that performs the above bridging function.
- Illustrative conductive elements include copper wires plated with Ag, Sn or Ni.
- the elements 60 are free of alloys with a relatively low melting point (e.g. a melting point lower than the desired processing temperature of the cell assembly, typically less than about 200°C), solder, or conductive adhesive components.
- the number of conductive elements 60 used per individual cell may vary from as little as two (2) (e.g. one on top and one on the bottom) to as many as several dozen.
- the number of and relative spacing of the conductive elements 60 may vary based upon a number of factors, such as: the type and resistivity of the of the elements; the size of the cell 20; the type, resistivity and spacing of the lines in the collection structure 28, the sheet resistance of the top surface 26; spacing of individual elements of the collection structure 28; and the contact resistance of all relevant interfaces (e.g. collection structure/top surface, collection structure/conductive elements, top surface/conductive elements).
- Fig. 12 shows an example of how power loss (normalized efficiency) can be minimized experimentally by optimization of the number of conductive elements.
- the overlap "C A " of the elements 60 on the conductive substrate layer 22 may range from as little as about 2.0mm to as much as the entire width "W" of the cell.
- the overlap "C A” ranges from about 2.0mm to 100.0mm, more preferably from about 5.0mm to 80.0mm, and most preferably from about 20.0mm to 50.0mm.
- the number of conductive elements and the cross section width of the conductive elements may be selected so that the total power loss due to line resistance of the conductive elements and the shading of the conductive elements is less than about 3% to 6% according to the equation:
- p is the resistivity of the conductive element
- I is the current generated by the PV device
- n is the number of conductive elements
- / is the length of the conductive elements
- V is the voltage generated by the PV device
- A is the cross sectional area of the conductive elements
- /' is the length of the conductive element that covers the top surface of the PV cell
- d is the diameter of the conductive element.
- the cross section width of the conductive elements may range from about 0.1mm to 2.0mm, more preferably from about 0.2mm to 1.Omm, and most preferably from about 0.3mm to 0.5mm.
- the power loss contributed by shading may be between about 25-75% of the total power loss caused by shading and resistive losses, more preferably between about 30-70%.
- the first encapsulant layer 40 may perform several functions.
- the layer 40 may serve as a bonding mechanism, helping hold the adjacent layers together (e.g. the cell 20; the plurality of conductive elements 60; and/or the second encapsulant layer 50). It should also allow the transmission of a desirous amount and type of light energy to reach the photovoltaic cell 20 (e.g. the photoactive portion 24).
- the first encapsulant layer 40 may also function to compensate for irregularities in geometry of the adjoining layers or translated though those layers (e.g. thickness changes). It also may serve to allow flexure and movement between layers due to environmental factors (e.g. temperature change, humidity, etc.) and physical movement and bending.
- first encapsulant layer 40 may consist essentially of an adhesive film or mesh, but is preferably a thermoplastic material such as EVA (ethylene- inyl-acetate), thermoplastic polyolefin or similar material. It is contemplated that the layer 40 may be comprised of a single layer or may be comprised of multiple layers (e.g. a first, second, third, fourth, fifth layer, etc.). In the case that layer 40 is comprised of multiple layers, it is contemplated that the first layer formed proximal to the top surface of the cell (e.g.
- this configuration can provide the advantage that a processing temperature can be selected such that the first layer does not completely melt during heat treatment, but reaches sufficient temperature to cause adhesion of the first layer to the top of the cell. This configuration prevents loss of contact of the conductive elements with the top conductive layer due to underflow of the encapsulant material between the conductive elements and the top conductive layer during heat treatment.
- the preferred thickness of this layer 40 can range from about 0.1mm to 1.0mm, more preferably from about 0.2mm to 0.8mm, and most preferably from about 0.25mm to 0.5mm.
- layer 40 should be comprised of different layers in which the difference in melting temperature (T m ) is at least 10°C.
- the processing temperature should be selected to be about 5°C or more less than the T m of the first layer and at least 5°C greater than the T m of the second layer.
- one such combination could be a first layer comprising of a polyolefin thermoplastic material with a melt temperature in the range of 105-130°C and a second layer comprising of an EVA copolymer type with a nominal melt temperature of 50- 100°C.
- adhesion via adsorption of the encapsulant layers to all surfaces being contacted is important to maintaining the integrity of the encapsulated assembly.
- adhesion forces measured for adsorption to glass should be greater than about 20 N/15 mm, more preferably greater than about 30 N/15 mm and even more preferably greater than about 40 N/15 mm.
- the adhesive strength can be determined using a standard 180 degree pull test as described in ASTM D903-98.
- a second encapsulant layer 50 is generally connectively located below the photovoltaic cell 20, although in some instances, it may directly contact the first encapsulant layer 40. It is contemplated that the second encapsulant layer 50 may serve a similar function as the first encapsulant layer, although it does not necessarily need to transmit electromagnetic radiation or light energy. Preferably, the second encapsulant layer 50 is configured to keep the plurality of conductive elements 60 in electrical contact with the conductive substrate layer 22. In the case that layer 50 is comprised of multiple layers, it is contemplated that the first layer formed proximal to the bottom surface of the cell (e.g.
- T m melting temperature
- this configuration can provide the advantage that a processing temperature can be selected such that the first layer does not completely melt during heat treatment, but reaches sufficient temperature to cause adhesion of the first layer to the bottom of the cell. This configuration prevents loss of contact of the conductive elements with the conductive substrate layer 22 due to underflow of the encapsulant material between the conductive elements and the top conductive layer during heat treatment.
- CIGS type solar cells 50 mm X 210 mm
- stainless steel substrate e.g. conductive substrate layer 22
- the cells are cut into smaller cells 50 mm ("L") X 25 mm ("W").
- a Ni/Ag grid e.g. collection structure 28
- ITO transparent conductive layer
- thirty (30) lines spanning across the larger cell dimension.
- the cells 20 are scribed down to the Mo layer (122) near the edge of the cells (e.g. from the outer edge, inboard about 1.0 to 2.0mm). It is believed that use of such scribing is common in industry because of damage due from cutting the cell 20.
- V oc voltage - open circuit
- I sc current - short circuit
- R s series resistance
- R sh shunt (parallel) resistance
- Jsc current - short circuit per unit area (mA/cm 2 )
- the wires were applied in a direction perpendicular to the direction of the fingers of the silver grid. No bonding material was used to attach the wire to the surface of the cells, (although a small piece of tape may be used to hold the elements 60 in-place until the lamination process can occur).
- the two cell assembly was then encapsulated between pieces of DNP PV-FS Z68 polyethylene sheet (e.g. encapsulants 40, 50 - not shown) of 400 ⁇ > thickness, on the top and bottom in such a manner that the bottom stainless steel substrate of cell A and the wires that extended beyond cell B were available for electrical connection via clips.
- the DNP/solar cells DNP assembly was then laminated at 150°C. Current/Voltage (l-V) characterization data for cell A and cell B individually, as well as the interconnected assembly are displayed in Fig. 13.
- the cells 20 were prepared as in the previous examples.
- the cells 20 are assembled in top-to-bottom fashion using ten (10) Ag-plated Cu wires (30 AWG; e.g. conductive elements 60), as illustrated in Fig. 9. Again, no bonding material was used to attach the wire to the surface of the cells.
- the cell 20/elements 60 assemblies are encapsulated between pieces of DNP PV-FS Z68 polyethylene sheet (encapsulants 40, 50) on the top and bottom in such a manner that the wires extended beyond the edges of the end cells.
- the wires 60 were then attached to Sn-coated Cu bus bars ("BB") via soldering using Sn Pb solder.
- the DNP/solar cells/DNP assembly is then laminated at 110°C. I-V characterization data for the individual cells and the interconnected assembly are displayed in Fig. 14.
- FIG. 15 Five (S) cells 20 with grids are prepared as in example 3.
- the cells 20 are assembled in top-to-bottom fashion using except that the 30 AWG Ag-plated Cu wire (elements 60) are substituted by 28 AWG Sn coated Cu wire (elements 60) as illustrated in Fig. 9.
- I-V characterization data for the individual cells and the interconnected assembly are displayed in Fig. 15.
- FIG. 17A-C Three (3) five (5) cell assemblies are constructed in a similar fashion as examples 3 and 4.
- the a grid design has fourteen (14) lines spanning across the larger cell dimension are assembled in top-to-bottom fashion using eight (8) Sn -plated Cu wires, 28 AWG as illustrated in Fig. 11.
- I-V characterization data for the individual cells and the interconnected assembly are summarized in Figs. 17A-C.
- a five cell Global Solar assembly that is interconnected using conventional string and tab approach using conductive epoxy is characterized by I-V measurement.
- the string is then cut into five cells by cutting the ribbon between cells and I-V measurements are taken for each cell.
- the data summarized in Fig. 16 shows that the performance of the string can be significantly poorer than the individual cells, in contrast to the data obtained for the cells connected by the method described herein.
- the method of assembling the photovoltaic cells 20 into an assembly 10 is also inventive. It is contemplated that all the components described above are provided and the assembly method utilized to manufacture the assembly 10 include at least the following.
- the first step may involve the application of the plurality of conductive elements 60 to the top surface 26 of each of the photovoltaic cells.
- Solar cells 20 can be provided in batches or stacks and manually or automatically provided to an unloading station.
- the solar cells 20 may alternatively be provided in the form of a continuous roll comprising a plurality of solar cells and separated from the roll just prior to assembly in a step referred to as singulation.
- the singulated solar cells 20 can be provided in bins that have been sorted by photovoltaic performance.
- the cells provided in the bins can be manually loaded individually by an operator, or more preferably an industrial robot can be used to pick individual cells from the bins and place in an inspection area.
- a vision system can then be used to guide an industrial robot in the precision pick-up and placement of the photovoltaic cells onto a flattop vacuum conveyor in the proper orientation.
- the vision system includes a camera that takes a picture of the top surface of the cell, which conveys information regarding the exact orientation of the cell to the robot so that the robot can pick it up and placed it on the conveyor in a precisely positioned orientation.
- the cells 20 can then be moved along the conveyor, during which time the non-conductive layer portion 30 can be applied near one or both of the edges of the cell either as a heat or UV-curable liquid dielectric, or in tape form. If the non-conductive layer is applied in tape form, it is preferred that the tape be of the type comprising adhesive on both sides, so that an adhesive surface is available to contact both the top surface 26 of the cell and the plurality of conductive elements 60.
- the plurality of conductive elements 60 can be applied to the top surface 26 in a continuous form.
- the plurality of conductive elements can be secured to the top surfaces of the cell at both peripheral edges using the adhesive properties of the non- conductive layer portion. If the non-conductive layer portion is a double sided adhesive tape, the plurality of conductive elements can be help in place with the adhesive on the tape. If the non-conductive portions is a UV curable liquid dielectric, then the plurality of conductive elements can be partially embedded in the non-conductive layer portion. The liquid dielectric can then be cured to secure the conductive elements to the top surface of the cells at both peripheral edges.
- the above process produces a continuous "string" of cells with a plurality of conductive elements contacting the top surface 26.
- the cells are separated by a sufficient gap to allow for the desired length of the conductive elements to extend beyond the trailing peripheral edge of each cell. This length is defined by the desired overlap "C A " of the elements 60 on the conductive substrate layer 22 in the finished product.
- the plurality of conductive elements can then be cut at the leading edge of each solar cell to produce individual cells with a plurality of conductive elements contacting the top surface 26 and extending beyond the trailing edge of the solar cell.
- the cutting process can be carried out via a mechanical operation, such as using a nip, or by using a laser to cut the wires at the specified locations.
- Similar "strings" of buss or terminal bars can be fabricated in a similar fashion, wherein the plurality of conductive elements are attached to a plurality of terminal bars via welding or soldering. In a preferred embodiment, this process is carried out via laser welding. The conductive elements are cut to produce a single terminal bar with a plurality of conductive elements attached and extending in the trailing direction.
- the terminal bars with conductive elements attached can be transported via a pick and place mechanism into an interconnect area.
- the interconnect area may contain a fixture for holding the second encapsulant 50.
- the terminal bars can be secured in place.
- the cells with conductive elements extending beyond the trailing edge can be placed onto the second encapsulant layer such that the plurality of conductive elements that extends beyond the trailing edge of the terminal bar contacts the back of the first solar cell.
- a second cell can then be placed such that the plurality of conductive elements extending beyond the trailing edge of the first cell contact the back of the second cell. This process is repeated until the desired number of cells are placed in the interconnected assembly.
- a second terminal bar, without conductive elements attached is secured in place on the second encapsulant.
- the conductive elements that extend beyond the trailing edge of the last cell are attached to the second terminal bar using soldering or welding. In a preferred embodiment this process is carried out via laser welding.
- the first encapsulant 40 can be placed over the top of the interconnected assembly.
- the product with first encapsulant layer, solar cells, plurality of conductive elements and terminal bars is laminated, for example in a vacuum lamtnator, and thus the assembly 10 is complete.
- any numerical values recited in the above application include all values from the lower value to the upper value in increments of one unit provided that there is a separation of at least 2 units between any lower value and any higher value.
- the amount of a component or a value of a process variable such as, for example, temperature, pressure, time and the like is, for example, from 1 to 90, preferably from 20 to 80, more preferably from 30 to 70, it is intended that values such as 15 to 85, 22 to 68, 43 to 51 , 30 to 32 etc. are expressly enumerated in this specification.
- one unit is considered to be 0.0001, 0.001 , 0.01 or 0.1 as appropriate.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013529278A JP5629010B2 (en) | 2010-09-17 | 2011-09-14 | Improved photovoltaic cell assembly and method |
EP11760665.7A EP2617065A2 (en) | 2010-09-17 | 2011-09-14 | Improved photovoltaic cell assembly and method |
CN201180044936.9A CN103109378B (en) | 2010-09-17 | 2011-09-14 | The photovoltaic cell component improved and method |
US13/820,647 US20130167910A1 (en) | 2010-09-17 | 2011-09-14 | Photovoltaic cell assembly and method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38386710P | 2010-09-17 | 2010-09-17 | |
US61/383,867 | 2010-09-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012037191A2 true WO2012037191A2 (en) | 2012-03-22 |
WO2012037191A3 WO2012037191A3 (en) | 2012-09-13 |
Family
ID=44674927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2011/051509 WO2012037191A2 (en) | 2010-09-17 | 2011-09-14 | Improved photovoltaic cell assembly and method |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130167910A1 (en) |
EP (1) | EP2617065A2 (en) |
JP (1) | JP5629010B2 (en) |
CN (1) | CN103109378B (en) |
WO (1) | WO2012037191A2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014175520A (en) * | 2013-03-11 | 2014-09-22 | Mitsubishi Electric Corp | Solar battery module and manufacturing method for the same |
JP2015518289A (en) * | 2012-05-31 | 2015-06-25 | ダウ グローバル テクノロジーズ エルエルシー | High utilization photovoltaic device |
WO2015199857A1 (en) | 2014-06-26 | 2015-12-30 | Dow Global Technologies Llc | Photovoltaic devices with sealant layer and laminate assembly for improved wet insulation resistance |
JPWO2013179655A1 (en) * | 2012-05-29 | 2016-01-18 | ユーケーシー エレクトロニクス(ホンコン)カンパニー., リミテッド | Photovoltaic power generation monitoring method and solar power generation monitoring system used for the method |
EP2983212A1 (en) * | 2014-08-04 | 2016-02-10 | LG Electronics Inc. | Solar cell module |
JP5860183B1 (en) * | 2015-05-26 | 2016-02-16 | トヤマキカイ株式会社 | Conductive tape applicator |
EP3355363A4 (en) * | 2015-07-02 | 2019-07-17 | CSI Cells Co. Ltd. | Solar cell module |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3159934B1 (en) * | 2014-09-30 | 2018-03-21 | LG Electronics Inc. | Solar cell panel |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US10056522B2 (en) | 2014-12-05 | 2018-08-21 | Solarcity Corporation | System and apparatus for precision automation of tab attachment for fabrications of solar panels |
DE102014225631A1 (en) * | 2014-12-11 | 2016-06-16 | Osram Gmbh | Photovoltaic module and photovoltaic system |
US11532765B2 (en) * | 2015-04-30 | 2022-12-20 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell and solar cell panel including the same |
EP3171412B1 (en) | 2015-11-17 | 2019-06-12 | LG Electronics Inc. | Apparatus and method for attaching interconnector of solar cell panel |
CN105489689B (en) * | 2016-02-02 | 2017-05-10 | 浙江晶科能源有限公司 | Photovoltaic assembly and manufacturing method of photovoltaic assembly |
KR101823605B1 (en) * | 2016-12-02 | 2018-03-14 | 엘지전자 주식회사 | Solar cell and solar cell panel including the same |
CN106847967B (en) * | 2016-12-28 | 2018-08-10 | 珠海格力电器股份有限公司 | Photovoltaic module and packaging method thereof |
FR3087298A1 (en) * | 2018-10-16 | 2020-04-17 | Voltinov Voltaique Innovation | IMPROVED SOLAR MODULE |
EP3764406A1 (en) * | 2019-07-11 | 2021-01-13 | Oxford Photovoltaics Limited | Multi-junction photovoltaic device |
CN116960207A (en) * | 2021-03-05 | 2023-10-27 | 浙江晶科能源有限公司 | Battery string structure, photovoltaic module and manufacturing method thereof |
CN114709284B (en) * | 2022-03-31 | 2023-03-24 | 盐城百佳年代薄膜科技有限公司 | Photovoltaic cell assembly with EVA (ethylene-vinyl acetate) adhesive film reflection structure |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767471A (en) | 1971-09-01 | 1973-10-23 | Bell Telephone Labor Inc | Group i-iii-vi semiconductors |
US4465575A (en) | 1981-09-21 | 1984-08-14 | Atlantic Richfield Company | Method for forming photovoltaic cells employing multinary semiconductor films |
JPH02143468A (en) | 1988-11-24 | 1990-06-01 | Mitsubishi Electric Corp | Solar cell |
JPH02216874A (en) | 1989-02-17 | 1990-08-29 | Hitachi Ltd | Silicon crystalline solar cell |
EP0841706A2 (en) | 1996-11-08 | 1998-05-13 | Showa Shell Sekiyu Kabushiki Kaisha | Transparent conductive film of thin-film solar cell and method for producing the transparent conductive film |
JPH10189924A (en) | 1996-12-27 | 1998-07-21 | Canon Inc | Production of semiconductor basic material and solar cell |
EP1032051A2 (en) | 1999-02-26 | 2000-08-30 | Kaneka Corporation | Method for manufacturing thin film photovoltaic device |
US20050011550A1 (en) | 2002-01-25 | 2005-01-20 | Chittibabu Kethinni G. | Low temperature interconnection of nanoparticles |
US6938761B2 (en) | 2003-06-10 | 2005-09-06 | J&M Innovative Products, Llc | Sportsmen's utility bucket cover apparatus and method |
US7022910B2 (en) | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
US20070251570A1 (en) | 2002-03-29 | 2007-11-01 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
US20070256734A1 (en) | 2006-05-08 | 2007-11-08 | United Solar Ovonic Llc | Stabilized photovoltaic device and methods for its manufacture |
US7432438B2 (en) | 2002-08-29 | 2008-10-07 | Day 4 Energy Inc. | Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module |
US20090255565A1 (en) | 2008-01-31 | 2009-10-15 | Global Solar Energy, Inc. | Thin film solar cell string |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0769818A3 (en) * | 1995-10-17 | 1998-10-28 | Canon Kabushiki Kaisha | Solar cell module having a surface side covering material with a specific nonwoven glass fiber member |
JP2000312019A (en) * | 1999-02-25 | 2000-11-07 | Canon Inc | Solar cell module array, installation structure therefor, installation method for solar cell module, and solar power generating system |
US8076568B2 (en) * | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
JP3872306B2 (en) * | 2001-02-01 | 2007-01-24 | 信越半導体株式会社 | Solar cell module and method for installing solar cell module |
JP2003069055A (en) * | 2001-06-13 | 2003-03-07 | Sharp Corp | Solar battery cell and method for manufacturing the same |
US7619159B1 (en) * | 2002-05-17 | 2009-11-17 | Ugur Ortabasi | Integrating sphere photovoltaic receiver (powersphere) for laser light to electric power conversion |
CN100481524C (en) * | 2003-09-10 | 2009-04-22 | 大日本印刷株式会社 | Encapsulant layer for solar battery assembly and solar battery assembly |
JP2006278710A (en) * | 2005-03-29 | 2006-10-12 | Kyocera Corp | Solar battery module and manufacturing method thereof |
US20090266396A1 (en) * | 2005-03-29 | 2009-10-29 | Kyocera Corporation | Polycrystalline Silicon Substrate, Method for Producing Same, Polycrystalline Silicon Ingot, Photoelectric Converter and Photoelectric Conversion Module |
US20070204900A1 (en) * | 2006-03-02 | 2007-09-06 | Li-Hung Lai | Package structure for a solar chip |
JP4663664B2 (en) * | 2006-03-30 | 2011-04-06 | 三洋電機株式会社 | Solar cell module |
US20080128018A1 (en) * | 2006-12-04 | 2008-06-05 | Richard Allen Hayes | Solar cells which include the use of certain poly(vinyl butyral)/film bilayer encapsulant layers with a low blocking tendency and a simplified process to produce thereof |
US20080216887A1 (en) * | 2006-12-22 | 2008-09-11 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
JP5384004B2 (en) * | 2007-03-19 | 2014-01-08 | 三洋電機株式会社 | Solar cell module |
US8697980B2 (en) * | 2007-06-19 | 2014-04-15 | Hanergy Holding Group Ltd. | Photovoltaic module utilizing an integrated flex circuit and incorporating a bypass diode |
EP2020688B1 (en) * | 2007-08-02 | 2013-11-27 | Sanyo Electric Co., Ltd. | Solar cell interconnection using thermo-compression bonding and correspondingly fabricated module |
FR2930556B1 (en) * | 2008-04-28 | 2012-08-17 | Arkema France | COMPOSITION BASED ON POLYAMIDE GRAFT POLYMER AND USE THEREOF IN PHOTOVOLTAIC MODULES |
-
2011
- 2011-09-14 JP JP2013529278A patent/JP5629010B2/en not_active Expired - Fee Related
- 2011-09-14 CN CN201180044936.9A patent/CN103109378B/en not_active Expired - Fee Related
- 2011-09-14 US US13/820,647 patent/US20130167910A1/en not_active Abandoned
- 2011-09-14 WO PCT/US2011/051509 patent/WO2012037191A2/en active Application Filing
- 2011-09-14 EP EP11760665.7A patent/EP2617065A2/en not_active Withdrawn
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767471A (en) | 1971-09-01 | 1973-10-23 | Bell Telephone Labor Inc | Group i-iii-vi semiconductors |
US4465575A (en) | 1981-09-21 | 1984-08-14 | Atlantic Richfield Company | Method for forming photovoltaic cells employing multinary semiconductor films |
JPH02143468A (en) | 1988-11-24 | 1990-06-01 | Mitsubishi Electric Corp | Solar cell |
JPH02216874A (en) | 1989-02-17 | 1990-08-29 | Hitachi Ltd | Silicon crystalline solar cell |
EP0841706A2 (en) | 1996-11-08 | 1998-05-13 | Showa Shell Sekiyu Kabushiki Kaisha | Transparent conductive film of thin-film solar cell and method for producing the transparent conductive film |
JPH10189924A (en) | 1996-12-27 | 1998-07-21 | Canon Inc | Production of semiconductor basic material and solar cell |
EP1032051A2 (en) | 1999-02-26 | 2000-08-30 | Kaneka Corporation | Method for manufacturing thin film photovoltaic device |
US20050011550A1 (en) | 2002-01-25 | 2005-01-20 | Chittibabu Kethinni G. | Low temperature interconnection of nanoparticles |
US7022910B2 (en) | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
US20070251570A1 (en) | 2002-03-29 | 2007-11-01 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
US7432438B2 (en) | 2002-08-29 | 2008-10-07 | Day 4 Energy Inc. | Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module |
US20090025788A1 (en) | 2002-08-29 | 2009-01-29 | Day4 Energy, Inc. | Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module |
US6938761B2 (en) | 2003-06-10 | 2005-09-06 | J&M Innovative Products, Llc | Sportsmen's utility bucket cover apparatus and method |
US20070256734A1 (en) | 2006-05-08 | 2007-11-08 | United Solar Ovonic Llc | Stabilized photovoltaic device and methods for its manufacture |
US20090255565A1 (en) | 2008-01-31 | 2009-10-15 | Global Solar Energy, Inc. | Thin film solar cell string |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2013179655A1 (en) * | 2012-05-29 | 2016-01-18 | ユーケーシー エレクトロニクス(ホンコン)カンパニー., リミテッド | Photovoltaic power generation monitoring method and solar power generation monitoring system used for the method |
JP2015518289A (en) * | 2012-05-31 | 2015-06-25 | ダウ グローバル テクノロジーズ エルエルシー | High utilization photovoltaic device |
JP2014175520A (en) * | 2013-03-11 | 2014-09-22 | Mitsubishi Electric Corp | Solar battery module and manufacturing method for the same |
WO2015199857A1 (en) | 2014-06-26 | 2015-12-30 | Dow Global Technologies Llc | Photovoltaic devices with sealant layer and laminate assembly for improved wet insulation resistance |
EP2983212A1 (en) * | 2014-08-04 | 2016-02-10 | LG Electronics Inc. | Solar cell module |
JP5860183B1 (en) * | 2015-05-26 | 2016-02-16 | トヤマキカイ株式会社 | Conductive tape applicator |
EP3355363A4 (en) * | 2015-07-02 | 2019-07-17 | CSI Cells Co. Ltd. | Solar cell module |
Also Published As
Publication number | Publication date |
---|---|
JP5629010B2 (en) | 2014-11-19 |
US20130167910A1 (en) | 2013-07-04 |
JP2013541205A (en) | 2013-11-07 |
EP2617065A2 (en) | 2013-07-24 |
CN103109378A (en) | 2013-05-15 |
WO2012037191A3 (en) | 2012-09-13 |
CN103109378B (en) | 2016-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20130167910A1 (en) | Photovoltaic cell assembly and method | |
US9147788B2 (en) | Photovoltaic cell assembly | |
US9419171B2 (en) | Two-part screen printing for solar collection grid | |
US20130276855A1 (en) | Interconnect assembly | |
US20120125391A1 (en) | Methods for interconnecting photovoltaic cells | |
EP2761674B1 (en) | Photovoltaic cell interconnect | |
CN102105970A (en) | Method and apparatus for achieving low resistance contact to a metal based thin film solar cell | |
US20140345675A1 (en) | Photovoltaic cell interconnect | |
WO2014028312A1 (en) | Bi-component electrical connector | |
WO2015073415A1 (en) | Method for delivering flexible solar cells into a roll-to-roll module assembly process | |
EP3959748A1 (en) | Half-cell photovoltaic modules | |
US20120240980A1 (en) | Interconnection Schemes for Photovoltaic Cells | |
EP2789019B1 (en) | A photovoltaic article comprising a photovoltaic cell with electrical connection elements | |
CN220569691U (en) | Connecting piece and solar cell module | |
RU2671912C1 (en) | Electrode for contacting of photoelectric converters |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180044936.9 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11760665 Country of ref document: EP Kind code of ref document: A2 |
|
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 13820647 Country of ref document: US |
|
REEP | Request for entry into the european phase |
Ref document number: 2011760665 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011760665 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2013529278 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |