WO2012036537A3 - Apparatus and method for manufacturing graphene using a flash lamp or laser beam, and graphene manufactured by same - Google Patents

Apparatus and method for manufacturing graphene using a flash lamp or laser beam, and graphene manufactured by same Download PDF

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Publication number
WO2012036537A3
WO2012036537A3 PCT/KR2011/006917 KR2011006917W WO2012036537A3 WO 2012036537 A3 WO2012036537 A3 WO 2012036537A3 KR 2011006917 W KR2011006917 W KR 2011006917W WO 2012036537 A3 WO2012036537 A3 WO 2012036537A3
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
substrate
flash lamp
roll
chamber
Prior art date
Application number
PCT/KR2011/006917
Other languages
French (fr)
Korean (ko)
Other versions
WO2012036537A2 (en
Inventor
이건재
최인성
Original Assignee
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100091640A external-priority patent/KR101198482B1/en
Priority claimed from KR1020110006115A external-priority patent/KR101172625B1/en
Priority claimed from KR1020110062484A external-priority patent/KR101260606B1/en
Application filed by 한국과학기술원 filed Critical 한국과학기술원
Publication of WO2012036537A2 publication Critical patent/WO2012036537A2/en
Publication of WO2012036537A3 publication Critical patent/WO2012036537A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Provided are a method and an apparatus for manufacturing graphene using a flash lamp, and graphene manufactured by the same. The apparatus of the present invention comprises: a chamber in which a substrate for growing graphene is arranged; an inlet unit which introduces reaction gas to one side of the substrate; a vacuum unit which applies vacuum to the chamber; and a flash lamp or laser device arranged in an upper portion of the chamber to irradiate light to the substrate, wherein the substrate is transferred by a roll-to-roll transfer means. The method and apparatus for manufacturing graphene according to the present invention induces reaction gas for graphene growth using heat of the light irradiated over a large area from the flash lamp, so as to grow graphene on the substrate. In addition, a flexible substrate is transferred by a roll-to-roll transfer system to grow graphene thereon, and graphene-based semiconductor devices may be mass-produced just by varying the composition of reaction gas without deforming graphene.
PCT/KR2011/006917 2010-09-17 2011-09-19 Apparatus and method for manufacturing graphene using a flash lamp or laser beam, and graphene manufactured by same WO2012036537A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020100091640A KR101198482B1 (en) 2010-09-17 2010-09-17 Manufacturing apparatus and method for graphene using flash ramp, and graphene manufactured by the same
KR10-2010-0091640 2010-09-17
KR10-2011-0006115 2011-01-11
KR1020110006115A KR101172625B1 (en) 2011-01-21 2011-01-21 Method for manufacturing semiconductor device, graphene semiconductor and transistor manufactured by the same
KR1020110062484A KR101260606B1 (en) 2011-06-27 2011-06-27 Manufacturing apparatus and method for graphene using flash ramp, and grapheme semiconductor manufactured by the same
KR10-2011-0062484 2011-06-27

Publications (2)

Publication Number Publication Date
WO2012036537A2 WO2012036537A2 (en) 2012-03-22
WO2012036537A3 true WO2012036537A3 (en) 2012-09-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006917 WO2012036537A2 (en) 2010-09-17 2011-09-19 Apparatus and method for manufacturing graphene using a flash lamp or laser beam, and graphene manufactured by same

Country Status (1)

Country Link
WO (1) WO2012036537A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104495821B (en) * 2014-12-16 2016-06-15 重庆墨希科技有限公司 The preparation method of a kind of monolayer continuous graphite alkene film coil and device
CN104495822B (en) * 2014-12-16 2016-06-15 重庆墨希科技有限公司 The preparation method of a kind of graphene film coiled material and device
CN110155994B (en) * 2019-04-04 2023-01-17 江苏大学 Device and method for directly preparing composite patterned graphene
CN113380949B (en) * 2021-06-07 2023-04-07 天津大学 Method for preparing transient electronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070187694A1 (en) * 2006-02-16 2007-08-16 Pfeiffer Loren N Devices including graphene layers epitaxially grown on single crystal substrates
US20080128397A1 (en) * 2006-11-06 2008-06-05 Unidym, Inc. Laser patterning of nanostructure-films
KR20090043418A (en) * 2007-10-29 2009-05-06 삼성전자주식회사 Graphene sheet and process for preparing the same
US20100102292A1 (en) * 2007-03-02 2010-04-29 Nec Corporation Semiconductor device using graphene and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070187694A1 (en) * 2006-02-16 2007-08-16 Pfeiffer Loren N Devices including graphene layers epitaxially grown on single crystal substrates
US20080128397A1 (en) * 2006-11-06 2008-06-05 Unidym, Inc. Laser patterning of nanostructure-films
US20100102292A1 (en) * 2007-03-02 2010-04-29 Nec Corporation Semiconductor device using graphene and method of manufacturing the same
KR20090043418A (en) * 2007-10-29 2009-05-06 삼성전자주식회사 Graphene sheet and process for preparing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TOMOHIDE TAKAMI ET AL., E-J. SCI. NANOTECH., vol. 7, 12 December 2009 (2009-12-12), pages 882 - 890 *

Also Published As

Publication number Publication date
WO2012036537A2 (en) 2012-03-22

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