WO2012030185A3 - Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof - Google Patents

Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof Download PDF

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Publication number
WO2012030185A3
WO2012030185A3 PCT/KR2011/006505 KR2011006505W WO2012030185A3 WO 2012030185 A3 WO2012030185 A3 WO 2012030185A3 KR 2011006505 W KR2011006505 W KR 2011006505W WO 2012030185 A3 WO2012030185 A3 WO 2012030185A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
diode chip
transmitting substrate
semiconductor light
Prior art date
Application number
PCT/KR2011/006505
Other languages
French (fr)
Korean (ko)
Other versions
WO2012030185A2 (en
Inventor
채승완
김태훈
이수열
이진복
김진환
이승재
김보경
이종호
Original Assignee
삼성엘이디 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성엘이디 주식회사 filed Critical 삼성엘이디 주식회사
Priority to US13/820,459 priority Critical patent/US20130240937A1/en
Priority to CN2011800512818A priority patent/CN103180975A/en
Priority claimed from KR1020110088613A external-priority patent/KR20120024489A/en
Publication of WO2012030185A2 publication Critical patent/WO2012030185A2/en
Publication of WO2012030185A3 publication Critical patent/WO2012030185A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Abstract

One aspect of the present invention provides a semiconductor light-emitting diode chip including: a light-transmitting substrate; and a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer which are sequentially formed on an upper surface of the light-transmitting substrate and a semiconductor light-emitting device including: a rear reflective type laminate which is formed on a lower surface of the light-transmitting substrate and has an optical auxiliary layer formed with a material having a predetermined refractive index and a metallic reflective layer formed on a lower surface of the optical auxiliary layer; a bonding metal layer which is provided on a lower surface of the rear reflective type laminate and is made of an eutectic metal; and a bonding laminate having a diffusion barrier which is formed to prevent the diffusion of the elements between the bonding metal layer and the metallic reflective layer.
PCT/KR2011/006505 2010-09-01 2011-09-01 Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof WO2012030185A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/820,459 US20130240937A1 (en) 2010-09-01 2011-09-01 Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof
CN2011800512818A CN103180975A (en) 2010-09-01 2011-09-01 Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20100085705 2010-09-01
KR10-2010-0085705 2010-09-01
KR10-2011-0088613 2011-09-01
KR1020110088613A KR20120024489A (en) 2010-09-01 2011-09-01 Semiconductor light emitting diode chip, light emitting device and manufacturing method of the same

Publications (2)

Publication Number Publication Date
WO2012030185A2 WO2012030185A2 (en) 2012-03-08
WO2012030185A3 true WO2012030185A3 (en) 2012-06-14

Family

ID=45773411

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006505 WO2012030185A2 (en) 2010-09-01 2011-09-01 Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof

Country Status (1)

Country Link
WO (1) WO2012030185A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100525540B1 (en) * 2002-11-16 2005-10-31 엘지이노텍 주식회사 Reflecting structure of light emitting diode
KR20080017180A (en) * 2006-08-21 2008-02-26 삼성전기주식회사 Semiconductor light emitting device
JP2008277342A (en) * 2007-04-25 2008-11-13 Hitachi Cable Ltd Light-emitting diode
JP2010067889A (en) * 2008-09-12 2010-03-25 Hitachi Cable Ltd Light-emitting element
US20100140637A1 (en) * 2008-12-08 2010-06-10 Matthew Donofrio Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100525540B1 (en) * 2002-11-16 2005-10-31 엘지이노텍 주식회사 Reflecting structure of light emitting diode
KR20080017180A (en) * 2006-08-21 2008-02-26 삼성전기주식회사 Semiconductor light emitting device
JP2008277342A (en) * 2007-04-25 2008-11-13 Hitachi Cable Ltd Light-emitting diode
JP2010067889A (en) * 2008-09-12 2010-03-25 Hitachi Cable Ltd Light-emitting element
US20100140637A1 (en) * 2008-12-08 2010-06-10 Matthew Donofrio Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration

Also Published As

Publication number Publication date
WO2012030185A2 (en) 2012-03-08

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