WO2012026659A1 - Élément à jonction p-n constitué d'un composé d'alkylantimoine, son procédé de fabrication, et dispositif optique solaire utilisant ledit élément - Google Patents
Élément à jonction p-n constitué d'un composé d'alkylantimoine, son procédé de fabrication, et dispositif optique solaire utilisant ledit élément Download PDFInfo
- Publication number
- WO2012026659A1 WO2012026659A1 PCT/KR2011/002095 KR2011002095W WO2012026659A1 WO 2012026659 A1 WO2012026659 A1 WO 2012026659A1 KR 2011002095 W KR2011002095 W KR 2011002095W WO 2012026659 A1 WO2012026659 A1 WO 2012026659A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- type layer
- alkali metal
- junction
- antimony
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 24
- -1 alkyl antimony compound Chemical class 0.000 title abstract 3
- 230000003287 optical effect Effects 0.000 title abstract 3
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 51
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 39
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 230000031700 light absorption Effects 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 49
- 150000001340 alkali metals Chemical class 0.000 claims description 49
- 229910052792 caesium Inorganic materials 0.000 claims description 20
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 15
- 239000011734 sodium Substances 0.000 claims description 11
- 229910052701 rubidium Inorganic materials 0.000 claims description 10
- 229910052700 potassium Inorganic materials 0.000 claims description 9
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 152
- 239000004065 semiconductor Substances 0.000 description 18
- 239000003513 alkali Substances 0.000 description 11
- 150000001463 antimony compounds Chemical class 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 230000005684 electric field Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- QHRPVRRJYMWFKB-UHFFFAOYSA-N [Sb].[Cs] Chemical compound [Sb].[Cs] QHRPVRRJYMWFKB-UHFFFAOYSA-N 0.000 description 1
- AUJJPYKPIQVRDH-UHFFFAOYSA-N antimony potassium Chemical compound [K].[Sb] AUJJPYKPIQVRDH-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne un élément à jonction p-n constitué d'un composé d'alkylantimoine, son procédé de fabrication, et un dispositif optique solaire utilisant ledit élément. Selon la présente invention, une couche de jonction p-n qui fait partie du dispositif optique solaire est constituée d'un composé comprenant un alkylmétal et de l'antimoine. Une couche d'absorption de la lumière constituée d'un composé d'alkylantimoine permet d'obtenir un dispositif solaire dont l'efficacité de conversion est élevée et qui est relativement bon marché.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0082963 | 2010-08-26 | ||
| KR20100082963A KR101172188B1 (ko) | 2010-08-26 | 2010-08-26 | 알칼리 안티몬 화합물로 이루어진 ｐｎ 접합소자, 이의 제조 방법 및 이를 이용한 태양광소자 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2012026659A1 true WO2012026659A1 (fr) | 2012-03-01 |
Family
ID=45723633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2011/002095 WO2012026659A1 (fr) | 2010-08-26 | 2011-03-25 | Élément à jonction p-n constitué d'un composé d'alkylantimoine, son procédé de fabrication, et dispositif optique solaire utilisant ledit élément |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101172188B1 (fr) |
| WO (1) | WO2012026659A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101441975B1 (ko) * | 2012-12-11 | 2014-09-25 | 주식회사 제우스 | 후면전극형 태양전지모듈과 이것의 제조방법 |
| KR101421551B1 (ko) * | 2012-12-11 | 2014-07-24 | 주식회사 제우스 | 태양전지모듈과 이것의 제조방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005286285A (ja) * | 2004-03-26 | 2005-10-13 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ化合物半導体層を成長する方法、エピタキシャルウエハ、および半導体装置 |
| JP2007273984A (ja) * | 2006-03-31 | 2007-10-18 | Aisin Seiki Co Ltd | 光電池デバイス |
| KR20100010381A (ko) * | 2008-07-22 | 2010-02-01 | 포테그라랩스 주식회사 | 태양전지 |
-
2010
- 2010-08-26 KR KR20100082963A patent/KR101172188B1/ko active IP Right Grant
-
2011
- 2011-03-25 WO PCT/KR2011/002095 patent/WO2012026659A1/fr active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005286285A (ja) * | 2004-03-26 | 2005-10-13 | Sumitomo Electric Ind Ltd | Ｉｉｉ−ｖ化合物半導体層を成長する方法、エピタキシャルウエハ、および半導体装置 |
| JP2007273984A (ja) * | 2006-03-31 | 2007-10-18 | Aisin Seiki Co Ltd | 光電池デバイス |
| KR20100010381A (ko) * | 2008-07-22 | 2010-02-01 | 포테그라랩스 주식회사 | 태양전지 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120057722A (ko) | 2012-06-07 |
| KR101172188B1 (ko) | 2012-08-07 |
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