WO2012015259A2 - Susceptor and deposition apparatus including the same - Google Patents

Susceptor and deposition apparatus including the same Download PDF

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Publication number
WO2012015259A2
WO2012015259A2 PCT/KR2011/005577 KR2011005577W WO2012015259A2 WO 2012015259 A2 WO2012015259 A2 WO 2012015259A2 KR 2011005577 W KR2011005577 W KR 2011005577W WO 2012015259 A2 WO2012015259 A2 WO 2012015259A2
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WO
WIPO (PCT)
Prior art keywords
spindle
installation part
susceptor
sintered body
spindle installation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/005577
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French (fr)
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WO2012015259A3 (en
Inventor
Young Nam Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of WO2012015259A2 publication Critical patent/WO2012015259A2/en
Publication of WO2012015259A3 publication Critical patent/WO2012015259A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Definitions

  • the present disclosure relates to a susceptor and a deposition apparatus including the susceptor.
  • Deposition apparatuses include a susceptor, and a substrate or wafer on which a material is deposited or an epitaxial growth occurs is placed on the susceptor.
  • Such susceptors may be formed of silicon carbide to have high thermal resistance.
  • a susceptor in a deposition apparatus is rotated by a spindle disposed under the susceptor.
  • the spindle may be worn by the susceptor. Since the spindle is disposed in the deposition apparatus, costs of replacing the worn spindle may be high.
  • Embodiments provide a susceptor preventing the wear of a spindle, and a deposition apparatus including the susceptor.
  • a susceptor includes: a sintered body formed of silicon carbide and including a recess; and a spindle installation part in the recess, wherein the spindle installation part has lower hardness than that of the sintered body.
  • the sintered body may include silicon carbide and an inevitable impurity.
  • the spindle installation part may include graphite.
  • the spindle installation part may be provided in the form of a bolt.
  • a portion of the sintered body defining the recess may be provided in the form of a nut.
  • the spindle installation part and the sintered body may be screwed to each other.
  • the spindle installation part may be fitted in the sintered body.
  • a deposition apparatus in another embodiment, includes: a chamber; a susceptor disposed in the chamber to support a wafer or a substrate; and a spindle disposed under the susceptor to rotate the susceptor, wherein the susceptor includes: a sintered body formed of silicon carbide and including a recess; and a spindle installation part in the recess, the spindle being installed on the spindle installation part, wherein the spindle installation part has lower hardness than that of the sintered body.
  • the spindle may include molybdenum.
  • the spindle installation part may include graphite.
  • the sintered body may include silicon carbide and an inevitable impurity.
  • the spindle installation part may be provided in the form of a bolt.
  • a portion of the sintered body defining the recess may be provided in the form of a nut.
  • the spindle installation part and the sintered body may be screwed to each other.
  • the spindle installation part may be fitted in the sintered body.
  • the susceptor includes the sintered body of silicon carbide and the spindle installation part disposed in the sintered body. While the sintered body of silicon carbide keeps the high hardness of the susceptor, the spindle installation part having lower hardness than that of the sintered body prevents the wear of the spindle. Thus, the service life of the deposition apparatus can be extended, and the maintenance costs of the susceptor can be reduced, thereby improving productivity.
  • Fig. 1 is a cross-sectional view illustrating a deposition apparatus according to an embodiment.
  • Fig. 2 is a perspective view illustrating the bottom part of a spindle installed on a susceptor according to a first embodiment.
  • Fig. 3 is a cross-sectional view illustrating the spindle and the susceptor of Fig. 2.
  • Fig. 4 is a cross-sectional view illustrating a spindle installed on a susceptor according to a second embodiment.
  • each layer (or film), region, pattern or structure may be exaggerated, omitted, or schematically illustrated for convenience in description and clarity.
  • Fig. 1 is a cross-sectional view illustrating a deposition apparatus according to an embodiment.
  • the deposition apparatus includes a chamber 18, a susceptor 30 disposed in the chamber 18 to support a wafer 10 or a substrate, and a spindle 16 disposed under the susceptor 30 to rotate the susceptor 30.
  • the spindle 16 may be formed of a metal including molybdenum.
  • a wafer carrier 12 is disposed on the susceptor 30, and the wafer 10 is disposed on the wafer carrier 12, but the present disclosure is not limited thereto.
  • a heating assembly 20 including a heater such as a heating filament 22 is disposed under the susceptor 30.
  • a heater such as a heating filament 22
  • an inner temperature of the chamber 18 is maintained at a temperature adapted for deposition.
  • Examples of the deposition apparatus may include a chemical vapor deposition (CVD) apparatus and a metal organic chemical vapor deposition (MOCVD) apparatus.
  • CVD chemical vapor deposition
  • MOCVD metal organic chemical vapor deposition
  • Fig. 2 is a perspective view illustrating the bottom part of a spindle installed on a susceptor according to a first embodiment.
  • Fig. 3 is a cross-sectional view illustrating the spindle and the susceptor of Fig. 2.
  • the susceptor 30 includes: a sintered body 32 formed of silicon carbide and including a recess 32a in the bottom surface thereof; and a spindle installation part 34 disposed in the recess 32a and receiving the spindle 16.
  • the spindle 16 may be fixed in a recess 36 of the spindle installation part 34.
  • the spindle 16 is rotatably fixed to the spindle installation part 34 to rotate the susceptor 30.
  • the hardness of the spindle installation part 34 is lower than that of the sintered body 32. Since the susceptor 30 includes the sintered body 32 in the form of bulk, service life of the susceptor 30 is extended, and wear of the spindle 16 is prevented.
  • a susceptor is formed by forming a silicon carbide layer on a graphite structure using a method such as chemical vapor deposition.
  • the silicon carbide layer may be peeled off.
  • the susceptor 30 includes the sintered body 32, thereby extending the service life of the susceptor 30.
  • a sintered body of silicon carbide has high hardness, a spindle may be worn during rotation.
  • the hardness of the spindle installation part 34 on which the spindle 16 is installed is lower than that of the sintered body 32 and the spindle 16, wear of the spindle 16 can be prevented.
  • the spindle installation part 34 having lower hardness than that of the spindle 16 is worn before the spindle 16 is worn. In this case, only the spindle installation part 34 is replaced, and thus, maintenance costs and time of the susceptor 30 can be saved.
  • the sintered body 32 may include silicon carbide and an inevitable impurity.
  • the impurity may include one of aluminum (Al), calcium (Ca), chrome (Cr), copper (Cu), iron (Fe), potassium (K), sodium (Na), nickel (Ni), and titanium (Ti).
  • the sintered body 32 may include about 0.001 ppm to about 5 ppm of the impurity.
  • the spindle 16 may include molybdenum, and the spindle installation part 34 may include graphite.
  • the sintered body 32 may have a density of about 3.15 g/cm 3 , a Vickers hardness of about 3500 or greater, e.g., about 3750, a bending strength of about 456 Mpa, a coefficient of thermal expansion of about 4.4 ⁇ 10 -6 , and a thermal conductivity of about 207 W/m. k.
  • the spindle installation part 34 may have a density of about 1.55 g/cm 3 , and a Vickers hardness of about 680.
  • the spindle installation part 34 may have a coefficient of thermal expansion that is similar or equal to that of the sintered body 32.
  • a difference in coefficient of thermal expansion between the sintered body 32 and the spindle installation part 34 may range from about 0 to about 0.5.
  • the spindle installation part 34 may have high thermal resistance, for example, have a melting point of about 1100°C or higher.
  • the spindle installation part 34 may be fitted in the sintered body 32, and be fixed.
  • the sintered body 32 including the recess 32a is formed.
  • the sintered body 32 may be formed using a hot-pressing sintering method or a reaction bonded silicon carbide (RBSC) method.
  • the hot-pressing sintering method may include a source mixing process, a granulating process, and a heating/molding process.
  • the resin may be about 1% to about 5% of a phenol-based resin.
  • the solvent may include an alcohol -based material or a water-based material.
  • the alcohol-based material may be methanol, ethanol, or iso-propylalcohol (IPA), and the water-based material may be water, but are not limited thereto.
  • a mixed source of the powder, the resin, and the solvent is granulated in the granulating process.
  • a spray dryer may be used to granulate the mixed source.
  • the granulated source is put in a hot-pressing sintering apparatus, and is heated and pressed to form a sintered body having a desired shape.
  • the granulated source may be preliminarily pressed, and then, be heated at a temperature ranging from about 2000°C to about 2300°C or higher and a pressure ranging from about 30 MPa to about 40 MPa, but the present disclosure is not limited thereto.
  • the RBSC method may include a source mixing process, a granulating process, a molding process, and a heating process. Since the source mixing process and the granulating process of the RBSC method are the same as those of the hot-pressing sintering method, a description thereof will be omitted.
  • the granulated source may have a desired shape through slip casting in a cold isostatic press (CIP).
  • a pressure of the CIP may range from about 1000 MPa to about 3000 MPa, but is not limited thereto.
  • the source having the desired shape and silicon are put in an apparatus such as a vacuum heat treatment apparatus, and are heat-treated to form the sintered body 32.
  • the source having the desired shape and the silicon may be heat-treated at a temperature ranging from about 1400°C to about 1600°C, but the present disclosure is not limited thereto.
  • the sintered body 32 is processed according to its purpose.
  • the sintered body 32 is cleaned using hydrochloric acid and/or ultrasonic waves.
  • the spindle installation part 34 is fitted into the recess 32a of the sintered body 32.
  • the susceptor 30 including the sintered body 32 and the spindle installation part 34 can be simply formed.
  • FIG. 4 is a cross-sectional view illustrating a spindle installed on the susceptor according to the current embodiment.
  • a susceptor 302 includes a spindle installation part 340 and a sintered body 320 formed of silicon carbide.
  • the spindle installation part 340 is provided in the form of a bolt, and a portion of the sintered body 320 defining a recess 302a is provided in the form of a nut. Accordingly, the spindle installation part 340 and the sintered body 320 are screwed to each other.
  • the spindle installation part 340 may be screwed into the recess 302a in a rotation direction of the spindle 16. Accordingly, even when the spindle 16 rotates, the spindle installation part 340 is securely fixed in the sintered body 320.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Provided is a susceptor, which includes a sintered body and a spindle installation part. The sintered body is formed of silicon carbide and including a recess. The spindle installation part is disposed in the recess. The spindle installation part has lower hardness than that of the sintered body.

Description

SUSCEPTOR AND DEPOSITION APPARATUS INCLUDING THE SAME
The present disclosure relates to a susceptor and a deposition apparatus including the susceptor.
Deposition apparatuses include a susceptor, and a substrate or wafer on which a material is deposited or an epitaxial growth occurs is placed on the susceptor. Such susceptors may be formed of silicon carbide to have high thermal resistance.
A susceptor in a deposition apparatus is rotated by a spindle disposed under the susceptor. In this case, when the susceptor has high hardness, the spindle may be worn by the susceptor. Since the spindle is disposed in the deposition apparatus, costs of replacing the worn spindle may be high.
Embodiments provide a susceptor preventing the wear of a spindle, and a deposition apparatus including the susceptor.
In one embodiment, a susceptor includes: a sintered body formed of silicon carbide and including a recess; and a spindle installation part in the recess, wherein the spindle installation part has lower hardness than that of the sintered body.
The sintered body may include silicon carbide and an inevitable impurity. The spindle installation part may include graphite.
The spindle installation part may be provided in the form of a bolt. A portion of the sintered body defining the recess may be provided in the form of a nut. The spindle installation part and the sintered body may be screwed to each other. The spindle installation part may be fitted in the sintered body.
In another embodiment, a deposition apparatus includes: a chamber; a susceptor disposed in the chamber to support a wafer or a substrate; and a spindle disposed under the susceptor to rotate the susceptor, wherein the susceptor includes: a sintered body formed of silicon carbide and including a recess; and a spindle installation part in the recess, the spindle being installed on the spindle installation part, wherein the spindle installation part has lower hardness than that of the sintered body.
The spindle may include molybdenum. The spindle installation part may include graphite. The sintered body may include silicon carbide and an inevitable impurity.
The spindle installation part may be provided in the form of a bolt. A portion of the sintered body defining the recess may be provided in the form of a nut. The spindle installation part and the sintered body may be screwed to each other. The spindle installation part may be fitted in the sintered body.
The details of one or more embodiments are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings, and from the claims.
According to the embodiments, the susceptor includes the sintered body of silicon carbide and the spindle installation part disposed in the sintered body. While the sintered body of silicon carbide keeps the high hardness of the susceptor, the spindle installation part having lower hardness than that of the sintered body prevents the wear of the spindle. Thus, the service life of the deposition apparatus can be extended, and the maintenance costs of the susceptor can be reduced, thereby improving productivity.
Fig. 1 is a cross-sectional view illustrating a deposition apparatus according to an embodiment.
Fig. 2 is a perspective view illustrating the bottom part of a spindle installed on a susceptor according to a first embodiment.
Fig. 3 is a cross-sectional view illustrating the spindle and the susceptor of Fig. 2.
Fig. 4 is a cross-sectional view illustrating a spindle installed on a susceptor according to a second embodiment.
In the description of embodiments, it will be understood that when a layer (or film), region, pattern or structure is referred to as being ‘on’ or ‘under’ another layer (or film), region, pad or pattern, the terminology of ‘on’ and ‘under’ includes both the meanings of ‘directly’ and ‘indirectly’. Further, the reference about ‘on’ and ‘under’ each layer will be made on the basis of drawings.
In the drawings, the dimensions and size of each layer (or film), region, pattern or structure may be exaggerated, omitted, or schematically illustrated for convenience in description and clarity.
Reference will now be made in detail to the embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings.
Fig. 1 is a cross-sectional view illustrating a deposition apparatus according to an embodiment.
Referring to Fig. 1, the deposition apparatus includes a chamber 18, a susceptor 30 disposed in the chamber 18 to support a wafer 10 or a substrate, and a spindle 16 disposed under the susceptor 30 to rotate the susceptor 30. For example, the spindle 16 may be formed of a metal including molybdenum.
A wafer carrier 12 is disposed on the susceptor 30, and the wafer 10 is disposed on the wafer carrier 12, but the present disclosure is not limited thereto.
A heating assembly 20 including a heater such as a heating filament 22 is disposed under the susceptor 30. When an electric current is applied to electrodes 25 to heat the heating filament 22, an inner temperature of the chamber 18 is maintained at a temperature adapted for deposition.
Examples of the deposition apparatus may include a chemical vapor deposition (CVD) apparatus and a metal organic chemical vapor deposition (MOCVD) apparatus.
The susceptor 30 will now be described in more detail with reference to Figs. 2 and 3. Fig. 2 is a perspective view illustrating the bottom part of a spindle installed on a susceptor according to a first embodiment. Fig. 3 is a cross-sectional view illustrating the spindle and the susceptor of Fig. 2.
Referring to Figs. 2 and 3, the susceptor 30 includes: a sintered body 32 formed of silicon carbide and including a recess 32a in the bottom surface thereof; and a spindle installation part 34 disposed in the recess 32a and receiving the spindle 16. The spindle 16 may be fixed in a recess 36 of the spindle installation part 34. The spindle 16 is rotatably fixed to the spindle installation part 34 to rotate the susceptor 30.
The hardness of the spindle installation part 34 is lower than that of the sintered body 32. Since the susceptor 30 includes the sintered body 32 in the form of bulk, service life of the susceptor 30 is extended, and wear of the spindle 16 is prevented.
In the related art, a susceptor is formed by forming a silicon carbide layer on a graphite structure using a method such as chemical vapor deposition. In this case, the silicon carbide layer may be peeled off. To address this limitation, the susceptor 30 includes the sintered body 32, thereby extending the service life of the susceptor 30. In addition, in the related art, since a sintered body of silicon carbide has high hardness, a spindle may be worn during rotation. However, since the hardness of the spindle installation part 34 on which the spindle 16 is installed is lower than that of the sintered body 32 and the spindle 16, wear of the spindle 16 can be prevented.
Accordingly, the spindle installation part 34 having lower hardness than that of the spindle 16 is worn before the spindle 16 is worn. In this case, only the spindle installation part 34 is replaced, and thus, maintenance costs and time of the susceptor 30 can be saved.
For example, the sintered body 32 may include silicon carbide and an inevitable impurity. The impurity may include one of aluminum (Al), calcium (Ca), chrome (Cr), copper (Cu), iron (Fe), potassium (K), sodium (Na), nickel (Ni), and titanium (Ti). The sintered body 32 may include about 0.001 ppm to about 5 ppm of the impurity. The spindle 16 may include molybdenum, and the spindle installation part 34 may include graphite. Accordingly, the sintered body 32 may have a density of about 3.15 g/cm3, a Vickers hardness of about 3500 or greater, e.g., about 3750, a bending strength of about 456 Mpa, a coefficient of thermal expansion of about 4.4×10-6, and a thermal conductivity of about 207 W/m. k. The spindle installation part 34 may have a density of about 1.55 g/cm3, and a Vickers hardness of about 680.
The spindle installation part 34 may have a coefficient of thermal expansion that is similar or equal to that of the sintered body 32. For example, a difference in coefficient of thermal expansion between the sintered body 32 and the spindle installation part 34 may range from about 0 to about 0.5.
The spindle installation part 34 may have high thermal resistance, for example, have a melting point of about 1100°C or higher.
The spindle installation part 34 may be fitted in the sintered body 32, and be fixed.
A method of fabricating the susceptor 30 will now be described.
The sintered body 32 including the recess 32a is formed. The sintered body 32 may be formed using a hot-pressing sintering method or a reaction bonded silicon carbide (RBSC) method.
The hot-pressing sintering method may include a source mixing process, a granulating process, and a heating/molding process.
In the source mixing process, powder of silicon carbide, a resin, and a solvent are mixed. The resin may be about 1% to about 5% of a phenol-based resin. The solvent may include an alcohol -based material or a water-based material. The alcohol-based material may be methanol, ethanol, or iso-propylalcohol (IPA), and the water-based material may be water, but are not limited thereto.
A mixed source of the powder, the resin, and the solvent is granulated in the granulating process. For example, a spray dryer may be used to granulate the mixed source.
In the heating/molding process, the granulated source is put in a hot-pressing sintering apparatus, and is heated and pressed to form a sintered body having a desired shape. At this point, the granulated source may be preliminarily pressed, and then, be heated at a temperature ranging from about 2000°C to about 2300°C or higher and a pressure ranging from about 30 MPa to about 40 MPa, but the present disclosure is not limited thereto.
The RBSC method may include a source mixing process, a granulating process, a molding process, and a heating process. Since the source mixing process and the granulating process of the RBSC method are the same as those of the hot-pressing sintering method, a description thereof will be omitted.
In the forming process, the granulated source may have a desired shape through slip casting in a cold isostatic press (CIP). At this point, a pressure of the CIP may range from about 1000 MPa to about 3000 MPa, but is not limited thereto.
In the heating process, the source having the desired shape and silicon are put in an apparatus such as a vacuum heat treatment apparatus, and are heat-treated to form the sintered body 32. The source having the desired shape and the silicon may be heat-treated at a temperature ranging from about 1400°C to about 1600°C, but the present disclosure is not limited thereto.
Then, the sintered body 32 is processed according to its purpose.
Then, the sintered body 32 is cleaned using hydrochloric acid and/or ultrasonic waves.
Then, the spindle installation part 34 is fitted into the recess 32a of the sintered body 32.
Accordingly, the susceptor 30 including the sintered body 32 and the spindle installation part 34 can be simply formed.
A susceptor and a method of fabricating the susceptor according to a second embodiment will now be described with reference to Fig. 4. In the current embodiment, a description of the same or substantially the same part as that of the first embodiment will be omitted. Fig. 4 is a cross-sectional view illustrating a spindle installed on the susceptor according to the current embodiment.
Referring to Fig. 4, a susceptor 302 includes a spindle installation part 340 and a sintered body 320 formed of silicon carbide. The spindle installation part 340 is provided in the form of a bolt, and a portion of the sintered body 320 defining a recess 302a is provided in the form of a nut. Accordingly, the spindle installation part 340 and the sintered body 320 are screwed to each other.
The spindle installation part 340 may be screwed into the recess 302a in a rotation direction of the spindle 16. Accordingly, even when the spindle 16 rotates, the spindle installation part 340 is securely fixed in the sintered body 320.
Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.

Claims (14)

  1. A susceptor comprising:
    a sintered body formed of silicon carbide and including a recess; and
    a spindle installation part in the recess,
    wherein the spindle installation part has lower hardness than that of the sintered body.
  2. The susceptor according to claim 1, wherein a difference in coefficient of thermal expansion between the sintered body and the spindle installation part ranges from about 0 to about 0.5.
  3. The susceptor according to claim 1, wherein the spindle installation part has a melting point of about 1100°C or higher.
  4. The susceptor according to claim 1, wherein the spindle installation part comprises graphite.
  5. The susceptor according to claim 1, wherein the spindle installation part is provided in the form of a bolt,
    a portion of the sintered body defining the recess is provided in the form of a nut, and
    the spindle installation part and the sintered body are screwed to each other.
  6. The susceptor according to claim 1, wherein the spindle installation part is fitted in the sintered body.
  7. A deposition apparatus comprising:
    a chamber;
    a susceptor disposed in the chamber to support a wafer or a substrate; and
    a spindle disposed under the susceptor to rotate the susceptor,
    wherein the susceptor includes:
    a sintered body formed of silicon carbide and including a recess; and
    a spindle installation part in the recess, the spindle being installed on the spindle installation part,
    wherein the spindle installation part has lower hardness than that of the sintered body.
  8. The deposition apparatus according to claim 7, wherein the spindle comprises molybdenum.
  9. The deposition apparatus according to claim 7, wherein the spindle installation part comprises graphite.
  10. The deposition apparatus according to claim 7, wherein the spindle installation part is provided in the form of a bolt,
    a portion of the sintered body defining the recess is provided in the form of a nut, and
    the spindle installation part and the sintered body are screwed to each other.
  11. The deposition apparatus according to claim 7, wherein the spindle installation part is fitted in the sintered body.
  12. The deposition apparatus according to claim 7, wherein the spindle has higher hardness than that of the spindle installation part.
  13. The deposition apparatus according to claim 7, wherein a difference in coefficient of thermal expansion between the sintered body and the spindle installation part ranges from about 0 to about 0.5.
  14. The deposition apparatus according to claim 7, wherein the spindle installation part has a melting point of about 1100°C or higher.
PCT/KR2011/005577 2010-07-30 2011-07-28 Susceptor and deposition apparatus including the same Ceased WO2012015259A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0074426 2010-07-30
KR1020100074426A KR20120012336A (en) 2010-07-30 2010-07-30 Susceptor and deposition apparatus including the same

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WO2012015259A2 true WO2012015259A2 (en) 2012-02-02
WO2012015259A3 WO2012015259A3 (en) 2012-05-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014126849A1 (en) * 2013-02-15 2014-08-21 Entegris, Inc. Replaceable locking insert for susceptor interface

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1226292A1 (en) * 1999-07-26 2002-07-31 Emcore Corporation Apparatus for growing epitaxial layers on wafers
US20030084852A1 (en) * 2000-08-30 2003-05-08 Davlin John T. Temperature control elements, spindle assembly, and wafer processing assembly incorporating same
US8021487B2 (en) * 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014126849A1 (en) * 2013-02-15 2014-08-21 Entegris, Inc. Replaceable locking insert for susceptor interface

Also Published As

Publication number Publication date
WO2012015259A3 (en) 2012-05-03
KR20120012336A (en) 2012-02-09

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