WO2011127343A3 - Avalanche photodiode operating voltage selection algorithm - Google Patents

Avalanche photodiode operating voltage selection algorithm Download PDF

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Publication number
WO2011127343A3
WO2011127343A3 PCT/US2011/031679 US2011031679W WO2011127343A3 WO 2011127343 A3 WO2011127343 A3 WO 2011127343A3 US 2011031679 W US2011031679 W US 2011031679W WO 2011127343 A3 WO2011127343 A3 WO 2011127343A3
Authority
WO
WIPO (PCT)
Prior art keywords
vop
apd
operating voltage
adjusted
estimated
Prior art date
Application number
PCT/US2011/031679
Other languages
French (fr)
Other versions
WO2011127343A2 (en
Inventor
Aaron Johnson
David Schorr
Jr. James H. Steenson
Original Assignee
Bae Systems Information And Electronic Systems Integration Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bae Systems Information And Electronic Systems Integration Inc. filed Critical Bae Systems Information And Electronic Systems Integration Inc.
Priority to US13/377,084 priority Critical patent/US8653434B2/en
Priority to EP11766774.1A priority patent/EP2556540B1/en
Publication of WO2011127343A2 publication Critical patent/WO2011127343A2/en
Publication of WO2011127343A3 publication Critical patent/WO2011127343A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4868—Controlling received signal intensity or exposure of sensor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)

Abstract

An accurate and rapid method for characterizing the performance of an APD and setting its operating voltage Vop to an optimal value uses an on-board LED or other pulsed light source to measure APD responses at different operating voltages Vop. An estimated breakdown voltage Vb is determined by comparing the measured responses, and the Vop is adjusted to a new value at a fixed offset from the estimated Vb. The fixed offset is selected according to ambient light conditions, including the presence or absence of light background noise, and whether the sun is partially or fully in the field of view. The method is iterated until convergence, or until a maximum number of iterations is reached. In embodiments, a plurality of APD's having a common Vop can be adjusted, and the Vop is never set below a minimum value VopBW necessary to meet timing requirements for a missile guidance system.
PCT/US2011/031679 2010-04-08 2011-04-08 Avalanche photodiode operating voltage selection algorithm WO2011127343A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/377,084 US8653434B2 (en) 2010-04-08 2011-04-08 Avalanche photodiode operating voltage selection algorithm
EP11766774.1A EP2556540B1 (en) 2010-04-08 2011-04-08 Avalanche photodiode operating voltage selection algorithm

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32196910P 2010-04-08 2010-04-08
US61/321,969 2010-04-08

Publications (2)

Publication Number Publication Date
WO2011127343A2 WO2011127343A2 (en) 2011-10-13
WO2011127343A3 true WO2011127343A3 (en) 2012-01-05

Family

ID=44763558

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/031679 WO2011127343A2 (en) 2010-04-08 2011-04-08 Avalanche photodiode operating voltage selection algorithm

Country Status (3)

Country Link
US (1) US8653434B2 (en)
EP (1) EP2556540B1 (en)
WO (1) WO2011127343A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9276031B2 (en) 2013-03-04 2016-03-01 Apple Inc. Photodiode with different electric potential regions for image sensors
US9741754B2 (en) 2013-03-06 2017-08-22 Apple Inc. Charge transfer circuit with storage nodes in image sensors
US10285626B1 (en) 2014-02-14 2019-05-14 Apple Inc. Activity identification using an optical heart rate monitor
US9686485B2 (en) 2014-05-30 2017-06-20 Apple Inc. Pixel binning in an image sensor
EP3081963B1 (en) 2015-04-15 2020-11-11 ams AG Avalanche diode arrangement and method for providing a detection signal
CN105045326B (en) * 2015-06-26 2017-10-03 东莞光智通讯科技有限公司 The method and device for keeping APD high tension voltages constant when supply voltage draws inclined
CN105490735B (en) * 2015-11-19 2017-11-24 上海斐讯数据通信技术有限公司 A kind of apparatus and method for calibrating light-receiving component sensitivity
CN109716525B (en) 2016-09-23 2020-06-09 苹果公司 Stacked back side illumination SPAD array
US10656251B1 (en) 2017-01-25 2020-05-19 Apple Inc. Signal acquisition in a SPAD detector
EP3574344B1 (en) 2017-01-25 2024-06-26 Apple Inc. Spad detector having modulated sensitivity
US10962628B1 (en) 2017-01-26 2021-03-30 Apple Inc. Spatial temporal weighting in a SPAD detector
EP3647812A4 (en) * 2017-06-27 2021-03-17 Pioneer Corporation Receiving device, control method, program and storage medium
US10622538B2 (en) 2017-07-18 2020-04-14 Apple Inc. Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body
US10440301B2 (en) 2017-09-08 2019-10-08 Apple Inc. Image capture device, pixel, and method providing improved phase detection auto-focus performance
US11019294B2 (en) 2018-07-18 2021-05-25 Apple Inc. Seamless readout mode transitions in image sensors
US10848693B2 (en) 2018-07-18 2020-11-24 Apple Inc. Image flare detection using asymmetric pixels
US11233966B1 (en) 2018-11-29 2022-01-25 Apple Inc. Breakdown voltage monitoring for avalanche diodes
US11476372B1 (en) 2020-05-13 2022-10-18 Apple Inc. SPAD-based photon detectors with multi-phase sampling TDCs
CN114070389A (en) * 2020-07-31 2022-02-18 中兴通讯股份有限公司 APD performance detection method and device for optical module, optical network and medium
EP4216540A4 (en) * 2020-09-15 2024-05-29 Sony Semiconductor Solutions Corporation Ranging system and light detection device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945227A (en) * 1986-11-25 1990-07-31 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Avalanche photodiode quenching circuit
US20010020673A1 (en) * 2000-03-09 2001-09-13 Franco Zappa Monolithic circuit of active quenching and active reset for avalanche photodiodes
JP2004031707A (en) * 2002-06-26 2004-01-29 Ntt Electornics Corp Avalanche photodiode
US20070200141A1 (en) * 2004-02-03 2007-08-30 Ntt Electronics Corporation Avalanche Photodiode
US20090020782A1 (en) * 2007-07-18 2009-01-22 Jds Uniphase Corporation Avalanche Photodiode With Edge Breakdown Suppression

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929982A (en) * 1997-02-04 1999-07-27 Tektronix, Inc. Active APD gain control for an optical receiver
US6222660B1 (en) 1998-06-09 2001-04-24 Tektronix, Inc. Adaptive power supply for avalanche photodiode
US6313459B1 (en) * 2000-05-31 2001-11-06 Nortel Networks Limited Method for calibrating and operating an uncooled avalanche photodiode optical receiver
WO2003067663A1 (en) * 2002-02-08 2003-08-14 Qinetiq Limited Photodetector circuit
GB0216075D0 (en) 2002-07-11 2002-08-21 Qinetiq Ltd Photodetector circuits
US7897906B2 (en) * 2007-03-23 2011-03-01 Excelitas Canada Inc. Double quench circuit for an avalanche current device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945227A (en) * 1986-11-25 1990-07-31 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Avalanche photodiode quenching circuit
US20010020673A1 (en) * 2000-03-09 2001-09-13 Franco Zappa Monolithic circuit of active quenching and active reset for avalanche photodiodes
JP2004031707A (en) * 2002-06-26 2004-01-29 Ntt Electornics Corp Avalanche photodiode
US20070200141A1 (en) * 2004-02-03 2007-08-30 Ntt Electronics Corporation Avalanche Photodiode
US20090020782A1 (en) * 2007-07-18 2009-01-22 Jds Uniphase Corporation Avalanche Photodiode With Edge Breakdown Suppression

Also Published As

Publication number Publication date
WO2011127343A2 (en) 2011-10-13
US20120080583A1 (en) 2012-04-05
EP2556540A2 (en) 2013-02-13
EP2556540A4 (en) 2018-02-07
EP2556540B1 (en) 2020-09-16
US8653434B2 (en) 2014-02-18

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