WO2011116750A3 - Herstellungsverfahren für einen lichtempfindlichen dünnschichtaufbau für die katalytische wasserstoffentwicklung und verwendung davon. - Google Patents

Herstellungsverfahren für einen lichtempfindlichen dünnschichtaufbau für die katalytische wasserstoffentwicklung und verwendung davon. Download PDF

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Publication number
WO2011116750A3
WO2011116750A3 PCT/DE2011/000280 DE2011000280W WO2011116750A3 WO 2011116750 A3 WO2011116750 A3 WO 2011116750A3 DE 2011000280 W DE2011000280 W DE 2011000280W WO 2011116750 A3 WO2011116750 A3 WO 2011116750A3
Authority
WO
WIPO (PCT)
Prior art keywords
indium phosphide
thin
layer
light
layer structure
Prior art date
Application number
PCT/DE2011/000280
Other languages
English (en)
French (fr)
Other versions
WO2011116750A2 (de
Inventor
Christian Heine
Hans-Joachim Lewerenz
Thomas Hannappel
Hagen Klemm
Andrés MUNOZ
Nadine Szabo
Original Assignee
Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh filed Critical Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh
Publication of WO2011116750A2 publication Critical patent/WO2011116750A2/de
Publication of WO2011116750A3 publication Critical patent/WO2011116750A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Hybrid Cells (AREA)

Abstract

Bekannte Photokathoden weisen keine ausreichende Effizienz und Langzeitstabilität auf. Es muss ein kostenintensiver Indiumphosphid-Wafer verwendet werden. Das erfindungsgemäße Verfahren stellt erstmals einen effizienten Dünnschichtaufbau (01) für die lichtinduzierte Elektrolyse zur Verfügung. Es umfasst einen Präpärationsschritt (PREP) zur homoepitaktischen Erzeugung einer dünnen Indiumphosphid-Schicht (03) mit einer speziellen, gut lichtinduziert aktivierbaren Oberfläche auf einem {100}- Indiumphosphid-Wafer (02). In einem Konditionierungsschritt (COND) wird die Indiumphosphid-Schicht (03) anschließend mittels zyklischer Voltammetrie in chloridhaltiger Säure unter Erzeugung eines Grenzflächenfilms (04) katalytisch aktiviert. Anschließend wird in einem den Grenzflächenfilm (04) noch verstärkenden Depositionsschritt (DEP) eine dünne katalytisch aktive Schicht (05) aus Nanopartikeln (06) aus einem Übergangsmetall Rh, Pt, Ir, Co, Cr, Mn, Ni, Mo oder Fe oder einer Mischung davon abgeschieden, die den Grenz- flächenfilm (04) vollständig bedeckt. Die Indiumphosphid-Schicht (03) oder der Dünnschichtaufbau (01) können in einem Separationsschritt (SEP) von dem Indiumphosphid-Wafer (02) abgezogen und auf einen beliebigen Träger mit einer leitfähigen Oberfläche für eine Photokathode übertragen werden. Der kostenintensive Indiumphosphid-Wafer (02) kann somit wieder verwendet werden.
PCT/DE2011/000280 2010-03-25 2011-03-18 Herstellungsverfahren für einen lichtempfindlichen dünnschichtaufbau für die katalytische wasserstoffentwicklung und verwendung davon. WO2011116750A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010012968A DE102010012968B4 (de) 2010-03-25 2010-03-25 Herstellungsverfahren für einen lichtempfindlichen Dünnschichtaufbau für die katalytische Wasserstoffentwicklung und Verwendung davon
DE102010012968.2 2010-03-25

Publications (2)

Publication Number Publication Date
WO2011116750A2 WO2011116750A2 (de) 2011-09-29
WO2011116750A3 true WO2011116750A3 (de) 2011-12-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/000280 WO2011116750A2 (de) 2010-03-25 2011-03-18 Herstellungsverfahren für einen lichtempfindlichen dünnschichtaufbau für die katalytische wasserstoffentwicklung und verwendung davon.

Country Status (2)

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DE (1) DE102010012968B4 (de)
WO (1) WO2011116750A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014105545B3 (de) * 2014-04-17 2015-07-30 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zum Herstellen einer Photoelektrode zumindest zur Wasserstoffentwicklung
US9562292B2 (en) 2014-05-05 2017-02-07 The United States Of America, As Represented By The Secretary Of Commerce Photoactive article, process for making, and use of same
US10087535B2 (en) 2015-03-23 2018-10-02 Alliance For Sustainable Energy, Llc Devices and methods for photoelectrochemical water splitting

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011149A (en) * 1975-11-17 1977-03-08 Allied Chemical Corporation Photoelectrolysis of water by solar radiation
US4388383A (en) * 1981-05-14 1983-06-14 Bell Telephone Laboratories, Incorporated Devices having chemically modified p-type InP surfaces
DE19520175A1 (de) * 1995-06-01 1996-12-12 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
A. HELLER ET AL: "Hydrogen-evolving semiconductor photocathodes: nature of the junction and function of the platinum group metal catalyst", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 104, no. 25, 1 December 1982 (1982-12-01), pages 6942 - 6948, XP055008362, ISSN: 0002-7863, DOI: 10.1021/ja00389a010 *
HIKARU KOBAYASHI ET AL: "Improvement in Hydrogen Photoevolution Efficiency for Platinum-Deposited Indium Phosphide Electrodes by the Removal of Surface States", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 33, no. Part 1, No. 10, 15 October 1994 (1994-10-15), pages 6065 - 6070, XP055008365, ISSN: 0021-4922, DOI: 10.1143/JJAP.33.6065 *
LEWERENZ H J ET AL: "Combined photoelectrochemical conditioning and surface analysis of InP photocathodes - II. Photoelectron spectroscopy", ELECTROCHIMICA ACTA, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 47, no. 16, 21 June 2002 (2002-06-21), pages 2639 - 2651, XP004359427, ISSN: 0013-4686, DOI: 10.1016/S0013-4686(02)00125-1 *
S. MENEZES: "Electrolyte-oxide-semiconductor junction at the p-InP/V2+-V3+ interface", APPLIED PHYSICS LETTERS, vol. 38, no. 9, 1 January 1981 (1981-01-01), pages 710, XP055008366, ISSN: 0003-6951, DOI: 10.1063/1.92488 *
T. HANNAPPEL ET AL: "In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K", JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 11, 1 November 2001 (2001-11-01), pages 1425 - 1428, XP055008370, ISSN: 0361-5235, DOI: 10.1007/s11664-001-0196-7 *
W. SCHMIDT ET AL: "Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP(001)(2x4)", PHYSICAL REVIEW B, vol. 61, no. 24, 1 June 2000 (2000-06-01), pages R16335 - R16338, XP055008371, ISSN: 0163-1829, DOI: 10.1103/PhysRevB.61.R16335 *

Also Published As

Publication number Publication date
DE102010012968A1 (de) 2011-09-29
WO2011116750A2 (de) 2011-09-29
DE102010012968B4 (de) 2013-05-08

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