WO2011113704A3 - Photorepeteur pour la lithographie en extreme ultra-violet - Google Patents

Photorepeteur pour la lithographie en extreme ultra-violet Download PDF

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Publication number
WO2011113704A3
WO2011113704A3 PCT/EP2011/053205 EP2011053205W WO2011113704A3 WO 2011113704 A3 WO2011113704 A3 WO 2011113704A3 EP 2011053205 W EP2011053205 W EP 2011053205W WO 2011113704 A3 WO2011113704 A3 WO 2011113704A3
Authority
WO
WIPO (PCT)
Prior art keywords
photorepeater
mask
membrane
extreme
thin
Prior art date
Application number
PCT/EP2011/053205
Other languages
English (en)
Other versions
WO2011113704A2 (fr
Inventor
Jean-Louis Imbert
Cyril Vannuffel
Original Assignee
Commissariat A L'energie Atomique Et Aux Energies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat A L'energie Atomique Et Aux Energies Alternatives filed Critical Commissariat A L'energie Atomique Et Aux Energies Alternatives
Publication of WO2011113704A2 publication Critical patent/WO2011113704A2/fr
Publication of WO2011113704A3 publication Critical patent/WO2011113704A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1876—Diffractive Fresnel lenses; Zone plates; Kinoforms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Abstract

L'invention concerne un photorépéteur pour l'exposition de résines lithographiques, notamment en extrême ultra-violet. Selon l'invention, le photorépéteur comporte une optique de projection image définie par un masque, l'optique comportant un cadre rigide épais ayant au moins une ouverture sur laquelle est tendue une membrane mince transparente en extrême ultraviolet d'une épaisseur maximale de 300 nanomètres portant un motif de gravures conférant à la membrane mince une fonction d'optique diffractive en transmission à la longueur d'onde utilisée par le photorépéteur. Le masque utilisé est lui-même de préférence réalisé à partir d'un cadre épais ayant une ou plusieurs ouvertures recouverte par une membrane mince transparente portant une couche mince d'un matériau opaque ou partiellement opaque au rayonnement en extrême ultra-violet. Cette couche mince est gravée selon un motif définissant le masque souhaité. Les ouvertures de l'optique de projection sont disposées en regard de celles du masque lorsque le masque et l'optique sont en place dans le photorépéteur.
PCT/EP2011/053205 2010-03-19 2011-03-03 Photorepeteur pour la lithographie en extreme ultra-violet WO2011113704A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR1001101 2010-03-19
FR1001101A FR2957686A1 (fr) 2010-03-19 2010-03-19 Photorepeteur pour la lithographie en extreme ultra-violet
FR1003481 2010-08-31
FR1003481A FR2957687A1 (fr) 2010-03-19 2010-08-31 Photorepeteur ou scanner pour la lithographie en extreme ultra-violet

Publications (2)

Publication Number Publication Date
WO2011113704A2 WO2011113704A2 (fr) 2011-09-22
WO2011113704A3 true WO2011113704A3 (fr) 2011-12-22

Family

ID=43017183

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/053205 WO2011113704A2 (fr) 2010-03-19 2011-03-03 Photorepeteur pour la lithographie en extreme ultra-violet

Country Status (2)

Country Link
FR (2) FR2957686A1 (fr)
WO (1) WO2011113704A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012219545A1 (de) * 2012-10-25 2014-04-30 Carl Zeiss Smt Gmbh Projektionsbelichtungssystem für EUV-Lithographie und Verfahren zum Betreiben des Projektionsbelichtungssystems

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900637A (en) * 1997-05-30 1999-05-04 Massachusetts Institute Of Technology Maskless lithography using a multiplexed array of fresnel zone plates
GB2351567A (en) * 1999-04-19 2001-01-03 Ims Ionen Mikrofab Syst Transmission mask and mask-exposure arrangement for projection lithography
US6472673B1 (en) * 1999-07-29 2002-10-29 Ims Ionen-Mikrofabrikations Systeme Gmbh Lithographic method for producing an exposure pattern on a substrate
US6498685B1 (en) * 1999-01-11 2002-12-24 Kenneth C. Johnson Maskless, microlens EUV lithography system
US20030081316A1 (en) * 2001-09-17 2003-05-01 Goldberg Kenneth Alan Diffractive optical element for extreme ultraviolet wavefront control
US20040135100A1 (en) * 2002-10-03 2004-07-15 Rajesh Menon System and method for holographic fabrication and replication of diffractive optical elements for maskless lithography
US20070066069A1 (en) * 2004-08-05 2007-03-22 Jmar Research, Inc. Radiation-Resistant Zone Plates and Methods of Manufacturing Thereof
US20070194254A1 (en) * 2006-02-17 2007-08-23 Asml Netherlands B.V. Photon sieve for optical systems in micro-lithography
US20090284725A1 (en) * 2008-05-15 2009-11-19 Asml Netherlands B.V. Lithographic apparatus

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900637A (en) * 1997-05-30 1999-05-04 Massachusetts Institute Of Technology Maskless lithography using a multiplexed array of fresnel zone plates
US6498685B1 (en) * 1999-01-11 2002-12-24 Kenneth C. Johnson Maskless, microlens EUV lithography system
GB2351567A (en) * 1999-04-19 2001-01-03 Ims Ionen Mikrofab Syst Transmission mask and mask-exposure arrangement for projection lithography
US6472673B1 (en) * 1999-07-29 2002-10-29 Ims Ionen-Mikrofabrikations Systeme Gmbh Lithographic method for producing an exposure pattern on a substrate
US20030081316A1 (en) * 2001-09-17 2003-05-01 Goldberg Kenneth Alan Diffractive optical element for extreme ultraviolet wavefront control
US20040135100A1 (en) * 2002-10-03 2004-07-15 Rajesh Menon System and method for holographic fabrication and replication of diffractive optical elements for maskless lithography
US20070066069A1 (en) * 2004-08-05 2007-03-22 Jmar Research, Inc. Radiation-Resistant Zone Plates and Methods of Manufacturing Thereof
US20070194254A1 (en) * 2006-02-17 2007-08-23 Asml Netherlands B.V. Photon sieve for optical systems in micro-lithography
US20090284725A1 (en) * 2008-05-15 2009-11-19 Asml Netherlands B.V. Lithographic apparatus

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KUBIAK G D ET AL: "DIFFRACTION-LIMITED SOFT X-RAY PROJECTION LITHOGRAPHY WITH A LASER PLASMA SOURCE", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US LNKD- DOI:10.1116/1.585313, vol. 9, no. 6, 1 November 1991 (1991-11-01), pages 3184 - 3188, XP000268537, ISSN: 1071-1023 *
SMITH H I: "A PROPOSAL FOR MASKLESS, ZONE-PLATE-ARRAY NANOLITHOGRAPHY", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US LNKD- DOI:10.1116/1.589044, vol. 14, no. 6, 1 November 1996 (1996-11-01), pages 4318 - 4322, XP000721157, ISSN: 1071-1023 *

Also Published As

Publication number Publication date
WO2011113704A2 (fr) 2011-09-22
FR2957686A1 (fr) 2011-09-23
FR2957687A1 (fr) 2011-09-23

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