WO2011111894A1 - Commutateur haute fréquence comprenant une unité de commutation pour une structure à défaut de masse - Google Patents

Commutateur haute fréquence comprenant une unité de commutation pour une structure à défaut de masse Download PDF

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Publication number
WO2011111894A1
WO2011111894A1 PCT/KR2010/001572 KR2010001572W WO2011111894A1 WO 2011111894 A1 WO2011111894 A1 WO 2011111894A1 KR 2010001572 W KR2010001572 W KR 2010001572W WO 2011111894 A1 WO2011111894 A1 WO 2011111894A1
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Prior art keywords
signal path
high frequency
frequency switch
port
dgs
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PCT/KR2010/001572
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English (en)
Korean (ko)
Inventor
김태원
강승렬
변현규
김준성
안달
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(주)파트론
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Publication of WO2011111894A1 publication Critical patent/WO2011111894A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Definitions

  • the present invention relates to a high frequency switch. More particularly, the present invention relates to a high frequency switch including a switching unit of a defective ground structure.
  • Second and third generation mobile communication systems mainly use frequency division duplexing (FDD).
  • FDD frequency division duplexing
  • the transmission signal and the reception signal are separated by a duplexer.
  • TDD Time Division Duplex
  • the time-divided transmission method including the TDD method divides the same frequency into time transmission and reception, respectively, and divides the inside of one frame into transmission and reception for bidirectional communication with one frequency. This is how you do it.
  • the Teddy system uses the same frequency but separates transmission and reception at predetermined time periods, there is a need for a high frequency switch for fast transmission and reception switching. Since the high frequency switch must be capable of high speed operation, semiconductor devices such as a pin diode or a field effect transistor (FET) are used more than a mechanical switch.
  • FET field effect transistor
  • the switch using the semiconductor device has a disadvantage that it is difficult to use for high power because of the high power of the semiconductor. That is, since high heat is generated when high power is applied to the switch using the semiconductor device, the switch is often destroyed unless sufficient heat dissipation is ensured. Accordingly, the switch developed to withstand high power must have a separate cooler, but this may lead to an increase in manufacturing cost.
  • a typical TDDI system employs a circulator instead of a high frequency switch, in which a transmission signal and a reception signal are fixed.
  • a circulator instead of a high frequency switch, in which a transmission signal and a reception signal are fixed.
  • it is difficult to secure enough isolation to block the transmission signal during the reception period, and when a problem occurs in the antenna and becomes open, the transmission signal is introduced into the receiver and the system is opened.
  • the circulator's IMD characteristics at high power There is also a problem with the circulator's IMD characteristics at high power.
  • the technical problem to be solved by the present invention is to provide an SPST high frequency switch capable of ensuring sufficient isolation in transmission and reception.
  • Another technical problem to be solved by the present invention is to provide an SPDT high frequency switch capable of securing sufficient isolation in transmission and reception.
  • An aspect of the SPST high frequency switch of the present invention for achieving the above technical problem is a first DGS switching unit connected to a signal path between a first port and a second port, and an auxiliary function unit connected to the signal path.
  • the first DGS switching unit includes a dielectric, a first conductor formed on one surface of the dielectric and connected to a signal path, and a second formed on the other surface of the dielectric and having a defect ground structure (DGS) formed therein. And a first diode formed on the other surface of the second conductor and connected to the second conductor.
  • DGS defect ground structure
  • One aspect of the SPDT high frequency switch of the present invention for achieving the above another technical problem is a first SPST high frequency switch connected to the first signal path between the first port and the second port, and between the first port and the third port A second SPST high frequency switch connected to a second signal path of the first SPST high frequency switch, wherein the first SPST high frequency switch is formed on one surface of the first dielectric and connected to the first signal path; A second conductor formed on the other side of the first dielectric and having a defective ground structure therein, a first diode formed on the other side of the second conductor, and connected to the second conductor, and including a first capacitor,
  • the second SPST high frequency switch is formed on the second dielectric, one surface of the second dielectric, the third conductor connected to the second signal path, and the second conductor formed on the other surface of the second dielectric, and having a defective ground structure formed therein. It is formed in the 4th conductor and the other surface of a 4th conductor, and 4th And a second diode
  • Another aspect of the SPDT high frequency switch of the present invention for achieving the above another technical problem is, the first signal path between the first port and the second port, the second signal path between the first port and the third port, the first signal The SPST high frequency switch connected to the path, and the circulator connected to the first to third ports.
  • the SPST high frequency switch it is possible to ensure sufficient isolation in transmission and reception by using the DGS switching unit. Therefore, it may be suitable to be used as a high-frequency switch for transmitting and receiving switching of the TV system, and even when the antenna is open, it is possible to effectively prevent the transmission power to flow into the receiving end.
  • the SPST high frequency switch according to the embodiments of the present invention exhibits a small insertion loss (IL) characteristic by using the DGS switching unit, and can be manufactured with a simple structure, when the switch is on. Since there are no nonlinear devices such as diodes and FETs on the transmission line, the IMD characteristics are excellent and there is an advantage that it can be easily operated even at high power.
  • IL small insertion loss
  • FIG. 1 is a circuit diagram of an SPST high frequency switch according to a first embodiment of the present invention.
  • FIG. 2 is a perspective view of a DGS switching unit of the SPST high frequency switch according to the first embodiment of the present invention.
  • FIG. 3 is a plan view of the DGS switching unit of the SPST high frequency switch according to the first embodiment of the present invention, viewed from the direction A of FIG. 2.
  • FIG. 4 is a circuit diagram of a DGS switching unit of an SPST high frequency switch according to a first embodiment of the present invention.
  • 5 to 8 are plan views of the DGS switching unit of the SPST high frequency switch according to the modified example of the first embodiment of the present invention, viewed from the direction A of FIG. 2.
  • 9 to 11 are circuit diagrams of an SPST high frequency switch according to another modified embodiment of the first embodiment of the present invention.
  • FIG. 12 is a circuit diagram of an SPST high frequency switch according to a second embodiment of the present invention.
  • FIG. 13 is a circuit diagram of an SPST high frequency switch according to a modified embodiment of the second embodiment of the present invention.
  • FIG. 14 is a circuit diagram of an SPST high frequency switch according to a third embodiment of the present invention.
  • 15 to 17 are circuit diagrams of an SPST high frequency switch according to a fourth embodiment of the present invention.
  • FIG. 18 is a circuit diagram of an SPST high frequency switch according to a fifth embodiment of the present invention.
  • 19 and 20 are circuit diagrams of an SPDT high frequency switch according to an embodiment of the present invention and a modified embodiment thereof, respectively.
  • 21 is a circuit diagram of an SPDT high frequency switch according to another embodiment of the present invention.
  • first, second, etc. are used to describe various components, these components are of course not limited by these terms. These terms are only used to distinguish one component from another. Therefore, of course, the first component mentioned below may be a second component within the technical spirit of the present invention.
  • Embodiments described herein will be described with reference to plan and cross-sectional views, which are ideal schematic diagrams of the invention. Accordingly, shapes of the exemplary views may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include variations in forms generated by the manufacturing process. Thus, the regions illustrated in the figures have schematic attributes, and the shape of the regions illustrated in the figures is intended to illustrate a particular form of region of the device, and is not intended to limit the scope of the invention.
  • FIG. 1 is a circuit diagram of an SPST high frequency switch according to a first embodiment of the present invention
  • FIG. 2 is a perspective view of a DGS switching unit of the SPST high frequency switch according to the first embodiment of the present invention
  • 3 is a plan view of the DGS switching unit of the SPST high frequency switch according to the first embodiment of the present invention, viewed from the direction A of FIG. 2
  • FIG. 4 is a circuit diagram of the DGS switching unit of the SPST high frequency switch according to the first embodiment of the present invention.
  • a single pole single throw (RFST) switch may include a first DGS switching unit 100 and an auxiliary function unit 300.
  • the first DGS switching unit 100 may be connected in series to the first signal path 1 between the first port 10 and the second port 20.
  • the first port 10 may be connected to the antenna, for example, and the second port 20 may be connected to the receiving end.
  • the first DGS switching unit 100 may play a role of passing or isolating a signal received from the antenna to the receiving end through an on / off operation.
  • the first DGS switching unit 100 may perform an on / off operation from the transmitting end. It may serve to transmit or block a signal to an antenna.
  • the first DGS switching unit 100 may include a dielectric 120, a first conductor 110, a second conductor 130, a first diode 150, and a first capacitor ( 160).
  • Dielectric 120 may be made of a dielectric material, for example, a dielectric substrate.
  • the first conductor 110 may be formed on one surface of the dielectric 120 and connected in series to the first signal path (1 in FIG. 1).
  • the first conductor 110 of the SPST high frequency switch according to the first embodiment of the present invention may be, for example, a microstrip transmission line as shown, but this is only one embodiment.
  • the present invention is not limited thereto, and the first conductor 110 may be formed in any other form as necessary.
  • the second conductor 130 may be formed on the other surface of the dielectric 120.
  • the second conductor 130 of the SPST high frequency switch according to the first embodiment of the present invention may be, for example, a ground plane connected to a ground terminal, but is not limited thereto.
  • a defect ground structure (DGS) 140 may be formed inside the second conductor 130.
  • the defective ground structure 140 may be, for example, an etch pattern structure formed by etching the second conductor 130 in a predetermined pattern.
  • the defect ground structure 140 may include a first etching unit 141, a second etching unit 142, and a third etching unit 143 as shown in FIGS. 2 and 3.
  • the first etching unit 141 and the second etching unit 142 may be formed in the same shape as shown in FIGS. 2 and 3.
  • the first etching unit 141 and the second etching unit 142 may be formed symmetrically with respect to the first conductor 110.
  • the first etching part 141 and the second etching part 142 may have a quadrangular shape as shown in FIGS. 2 and 3.
  • the third etching part 143 may have an area smaller than that of the first etching part 141 and the second etching part 142. 2 and 3, the third etching unit 143 has an area smaller than that of the first etching unit 141 and the second etching unit 142, and the first etching unit 141 and the second etching unit are smaller.
  • the defect ground structure 140 as a whole may be formed to exhibit a dumbbell shape.
  • the first diode 150 and the first capacitor 160 may be connected to the second conductor 130.
  • the first diode 150 and the first capacitor 160 may be formed on the third etching unit 143 on the other surface of the second conductor 130 to be connected to the second conductor 130. .
  • first etched portion 141 and the second etched portion 142 are quadrangular shapes in FIGS. 2 to 4, the present invention is not limited thereto and various modifications may be made as necessary.
  • 2 to 4 illustrate a defect ground structure 140 in which a first etching unit 141, a second etching unit 142, and a third etching unit 143 are formed, but the present invention is also limited thereto. And various modifications are possible if necessary.
  • 5 to 8 are plan views of the DGS switching unit of the SPST high frequency switch according to the modified example of the first embodiment of the present invention, viewed from the direction A of FIG. 2.
  • the shapes of the first etched portion 141 and the second etched portion 142 may be a fork shape as shown in FIG. 5, or a spiral shape as shown in FIG. 6. Can be. Compared to the quadrangular shape, as shown in FIGS. 5 and 6, when the circumferential length and width of the etched portion are changed, the inductance value and the capacitance value of the device are changed, so that a switch function at another frequency can be performed more efficiently.
  • the defective ground structure 140 may include a first etching unit 141, a second etching unit 142, a third etching unit 143, and a fourth etching unit 144.
  • a bias circuit unit (not shown) may be formed in a region between the third etching unit 143 and the fourth etching unit 144 of the second conductor 130.
  • the fourth etching unit 144 may have an area smaller than that of the first etching unit 141 and the second etching unit 142, and as illustrated on the fourth etching unit 144, a second capacitor ( 170 and the third capacitor 180 may be further formed.
  • the first to third capacitors 160, 170, and 180 may be further formed in parallel as shown in FIG. 8.
  • the insertion loss characteristic of the switch can be further improved.
  • FIG. 8 illustrates that the first to third capacitors 160, 170, and 180 are formed in two, respectively, in parallel
  • the present invention is not limited thereto, and the first to third capacitors 160, 170 may be used as necessary.
  • 180 may be formed by connecting a larger number of capacitors in parallel.
  • the auxiliary function unit 300 may be shunted to the first signal path 1 between the first port 10 and the second port 20.
  • the auxiliary function unit 300 of the SPST high frequency switch according to the first embodiment of the present invention may be the second DGS switching unit 200 as shown.
  • the second DGS switching unit 200 may be implemented like the first DGS switching unit 100 according to the various embodiments described above. Therefore, detailed description thereof will be omitted.
  • the diode of the first DGS switching unit 100 is turned on and the diode of the second DGS switching unit 200 is turned off. If so, the signal provided from the first port 10 can be effectively transmitted to the second port 20 or the signal provided from the second port 20 to the first port 10 without loss.
  • the SPST high frequency switch according to the first embodiment of the present invention, it is possible to ensure sufficient isolation in transmission and reception by using the DGS switching unit. Therefore, it may be suitable to be used as a high-frequency switch for transmitting and receiving switching of the TV system, and even when the antenna is open, it is possible to effectively prevent the transmission power to flow into the receiving end.
  • the SPST high frequency switch according to the first embodiment of the present invention exhibits a small insertion loss (IL) characteristic by using the DGS switching unit, and can be manufactured with a simple structure, and the switch on operation Since there are no nonlinear devices such as diodes and field effect transistors (FETs) on the transmission line, the IMD characteristics are excellent and there is an advantage that it can be easily operated even at high power.
  • IL small insertion loss
  • 9 to 11 are circuit diagrams of an SPST high frequency switch according to another modified embodiment of the first embodiment of the present invention.
  • the SPST high frequency switch may further include a fourth capacitor 205.
  • one end of the fourth capacitor 205 may be connected to the second DGS switching unit 200, and the other end thereof may be connected to the ground terminal.
  • the ground terminal may be, for example, the second conductor 130 (refer to FIG. 2), which is the ground plane described above.
  • the auxiliary function unit 300 may include a second DGS switching unit 200 and a fourth capacitor 205.
  • the fourth capacitor 205 may be further connected in parallel as shown in FIG. In this case, the insertion loss characteristic of the switch can be further improved.
  • FIG. 10 illustrates that two fourth capacitors 205 are connected in parallel, the present invention is not limited thereto, and each fourth capacitor 205 may have a larger number of capacitors connected in parallel as necessary. Can be.
  • the SPST high frequency switch may further include a first microstrip transmission line 210.
  • one end of the first microstrip transmission line 210 may be connected to the second DGS switching unit 200 and the other end may be connected to the ground terminal.
  • the ground terminal may be, for example, the second conductor 130 (see FIG. 2), which is the ground plane described above.
  • the auxiliary function unit 300 may include a second DGS switching unit 200 and a first microstrip transmission line 210.
  • the operation of the SPST high frequency switch according to another modified embodiment of the first embodiment of the present invention may be the same as the operation of the SPST high frequency switch according to the embodiment of the present invention described above.
  • FIG. 12 is a circuit diagram of an SPST high frequency switch according to a second embodiment of the present invention.
  • the auxiliary function unit 300 of the SPST high frequency switch may include a second diode 220.
  • the second diode 220 may be connected to the first signal path 1, and the other end thereof may be connected to the ground terminal. More specifically, the second diode 220 may have an anode terminal connected to the ground terminal and a cathode terminal connected to the first signal path 1.
  • the ground terminal may be, for example, the second conductor 130 (see FIG. 2), which is the ground plane described above.
  • the signal provided from the first port 10 is removed.
  • the signal provided to the second port 20 or from the second port 20 can be effectively transmitted to the first port 10 without loss.
  • the signal provided from the first port 10 is blocked and not transmitted to the second port 20.
  • the signal provided from the two port 20 may be blocked and not transmitted to the first port 10.
  • FIG. 13 is a circuit diagram of an SPST high frequency switch according to a modified embodiment of the second embodiment of the present invention.
  • the auxiliary function unit 300 of the SPST high frequency switch may include a second microstrip transmission line 230 and a second diode 220. .
  • the second microstrip transmission line 230 is connected to the first signal path 1, and the other end thereof is connected to the second diode 220, and the second diode is connected to the second microstrip transmission line ( 230, the other end may be connected to the ground terminal. More specifically, the second microstrip transmission line 230 has one end connected to the first signal path 1 and the other end connected to the anode end of the second diode 220, and the cathode of the second diode 220.
  • the stage may be connected to a ground terminal.
  • the ground terminal may be, for example, the second conductor 130 (see FIG. 2), which is the ground plane described above.
  • FIG. 14 is a circuit diagram of an SPST high frequency switch according to a third embodiment of the present invention.
  • the SPST high frequency switch according to the third embodiment of the present invention may further include a third DGS switching unit 400.
  • the third DGS switching unit 400 may be connected in series to the first signal path 1 as shown in FIG. 14.
  • the third DGS switching unit 400 may be formed in various shapes according to various modified embodiments of the first DGS switching unit 100 and the second DGS switching unit 200 described above. The duplicate description thereof will also be omitted.
  • the apparatus further includes a third DGS switching unit 400 connected in series to the first signal path 1, the first DGS switching unit 100 and the second DGS switching unit 200 may be connected. It can improve the blocking characteristics more.
  • 15 to 17 are circuit diagrams of an SPST high frequency switch according to a fourth embodiment of the present invention.
  • the first signal path 1 of the SPST high frequency switch is a 3/4 ⁇ transmission line formed between the first port 10 and the second port 20.
  • the auxiliary function unit 300 may include a 1/4 ⁇ transmission line formed between the first port 10 and the second port 20.
  • the first DGS switching unit 100 may be connected in series to the first signal path 1 as shown in FIG. 15.
  • the first DGS switching unit 100 may be shunted to the first signal path 1. 16 and 17, embodiments in which the first DGS switching unit 100 is shunted to a 3/4 lambda transmission line that is the first signal path 1 are illustrated.
  • the first DGS switching unit 100 when the first DGS switching unit 100 is turned on, the first signal path 1 and the auxiliary function unit 300 operate as an annular resonator so that the second port (from the first port 10 to the second port ( 20 or a signal transmitted from the second port 20 to the first port 10 may be blocked.
  • the 3/4 ⁇ transmission line which is the first signal path 1
  • the 1/4 ⁇ transmission line which is the auxiliary function unit 300.
  • the signal may be transmitted from the first port 10 to the second port 20 or from the second port 20 to the first port 10 without loss.
  • FIG. 18 is a circuit diagram of an SPST high frequency switch according to a fifth embodiment of the present invention.
  • the first DGS switching unit 100 of the SPST high frequency switch may be shunt-connected to the first signal path 1.
  • the second DGS switching unit 200 which is the auxiliary function unit 300, may also be shunt-connected to the first signal path 1.
  • the first port 10 to the second port 20, or the second port 20 to the first port Signal 10 can be delivered without loss.
  • both the first DGS switching unit 100 and the second DGS switching unit 200 are turned on, the first port 10 to the second port 20 or the second port 20 to the first port ( The signal transmitted to 10 may be blocked.
  • SPDT single pole dual throw
  • the SPDT high frequency switch may include the first SPST high frequency switch and the second SPST high frequency switch described above.
  • the first SPST high frequency switch may be connected to the first signal path 1 between the first port 10 and the second port 20, and the second SPST high frequency switch may be connected to the first port 10. It may be connected to the second signal path 2 between the third ports 30.
  • the first port 10 may be connected to the antenna, for example, the second port 20 may be connected to the transmitting terminal Tx, for example, and the third port 30 may be connected to the receiving terminal Rx. Can be connected.
  • the first SPST high frequency switch is turned on, and the second SPST high frequency switch is turned off to provide a transmission signal from the transmitting end to the antenna via the first signal path 1, and the transmission signal 2 Since the SPST high frequency switch is off, it is not provided to the receiver and can be isolated.
  • the second SPST high frequency switch is turned on, and the first SPST high frequency switch is turned off to provide the reception signal from the antenna to the receiver through the second signal path 2, and the received signal is transmitted to the first terminal. Since the SPST high frequency switch is off, it is not provided to the transmitter and can be isolated.
  • the second port 20 is connected to the transmitting end and the third port 30 is connected to the receiving end, the reverse is possible.
  • the operation of the first and second SPST high frequency switches during signal transmission / reception is reversed.
  • the first port 10 may be connected to, for example, an antenna
  • the second port 20 may be connected to, for example, a first transmitting end
  • the third port 30 may be connected to a second transmitting end. have.
  • the first SPST high frequency switch when the first transmission signal having the first band is transmitted, the first SPST high frequency switch is turned on, and the second SPST high frequency switch is turned off to transmit the first transmission signal having the first band through an antenna.
  • the second SPST high frequency switch may be turned on, and the first SPST high frequency switch may be turned off to transmit the second transmission signal having the second band through the antenna.
  • the same operation may also be performed when the second port 20 and the third port 30 are respectively connected to the first receiving end and the second receiving end, respectively.
  • the SPDT high frequency switch can be used for various purposes in a communication system requiring high isolation and low insertion loss characteristics.
  • FIG. 19 illustrates that the first SPST high frequency switch and the second SPST high frequency switch according to the first embodiment of the present invention are connected, the present invention is not limited thereto. That is, as the first SPST high frequency switch and the second SPST high frequency switch, all the SPST high frequency switches according to various embodiments described above may be employed.
  • the SPST high frequency switch according to the first embodiment of the present invention is connected to the first signal path 1, and the modified embodiment of the second embodiment of the present invention is connected to the second signal path 2.
  • An SPDT high frequency switch according to a modified embodiment of the first embodiment of the present invention, to which the SPST high frequency switch is connected, is shown. As such, in the case of the SPDT high frequency switch of the present invention, all the SPST high frequency switches according to various embodiments described above with respect to the first signal path 1 and the second signal path 2 may be connected.
  • 21 is a circuit diagram of an SPDT high frequency switch according to another embodiment of the present invention.
  • the SPDT high frequency switch may include a first signal path 1, a second signal path 2, a circulator 500, and an SPST high frequency switch according to various embodiments of the present disclosure. have.
  • the first signal path 1 may be a signal path between the first port 10 and the second port 20, and the second signal path 2 may be the first port 10 and the third port 30. It may be a signal path between.
  • an SPST high frequency switch may be connected to the first signal path 1.
  • FIG. 21 shows that the SPST high frequency switch according to the first embodiment of the present invention is connected, the present invention is not limited thereto, and the SPST high frequency switch according to the various embodiments of the present invention is described above. It can be either of the switches.
  • the circulator 500 may be connected to all of the first to third ports 10 to 30.
  • the first signal path 1 serves as the circulator 500 and the SPST high frequency switch according to various embodiments of the present invention
  • the second signal path 2 as the circulator 500. Can act as a switch.
  • FIG. 21 illustrates that the above-described SPST switch is not connected to the second signal path 2, the SPST high frequency switch according to various embodiments of the present disclosure may be connected as necessary.
  • the invention is applicable to the telecommunications industry using RF switches. However, it is not limited thereto.

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Abstract

L'invention porte sur un commutateur haute fréquence comprenant une unité de commutation pour une structure à défaut de masse (DGS). Le commutateur haute fréquence comprend : une première unité de commutation DGS connectée à un trajet de signal entre un premier port et un second port ; et une unité de fonction auxiliaire connectée au trajet de signal. La première unité de commutation DGS comprend : un diélectrique ; un premier conducteur formé sur une surface du diélectrique et connecté au trajet de signal ; un second conducteur formé sur l'autre surface du diélectrique et ayant une DGS interne ; et une première diode formée sur l'autre surface du second conducteur et connectée au second conducteur.
PCT/KR2010/001572 2010-03-11 2010-03-12 Commutateur haute fréquence comprenant une unité de commutation pour une structure à défaut de masse WO2011111894A1 (fr)

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KR1020100021932A KR101174440B1 (ko) 2010-03-11 2010-03-11 결함 접지 구조의 스위칭부를 포함하는 고주파 스위치
KR10-2010-0021932 2010-03-11

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WO2013119181A1 (fr) * 2012-02-06 2013-08-15 Nanyang Technological University Interrupteur
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KR102405672B1 (ko) 2017-11-06 2022-06-03 엘지디스플레이 주식회사 Dgs를 포함하는 위상 천이기 및 이를 포함하는 전파 통신 모듈
RU2680429C1 (ru) 2018-05-21 2019-02-21 Самсунг Электроникс Ко., Лтд. Оптически-управляемый переключатель миллиметрового диапазона и основанные на нем устройства

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KR20050060280A (ko) * 2003-12-16 2005-06-22 세원텔레텍 주식회사 λ/4 ＤＧＳ 바이어스 전원 전송선로 및 그를 이용한전력증폭기
US20060158286A1 (en) * 2005-01-19 2006-07-20 Yeong-Lin Lai Defected ground structure for coplanar waveguides
KR100623517B1 (ko) * 2005-05-24 2006-09-13 순천향대학교 산학협력단 유전체의 접지면에 식각된 결함 구조를 갖는 마이크로파용공진기
US20070194864A1 (en) * 2006-02-03 2007-08-23 Samsung Electronics Co., Ltd. DC block with band-notch characteristics using DGS

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013119181A1 (fr) * 2012-02-06 2013-08-15 Nanyang Technological University Interrupteur
US20150054594A1 (en) * 2012-02-06 2015-02-26 Nanyang Technological University Switch
EP2812943A4 (fr) * 2012-02-06 2015-11-11 Univ Nanyang Tech Interrupteur
US11228077B2 (en) 2019-06-17 2022-01-18 Carrier Corporation Microstrip DC block

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KR20110102756A (ko) 2011-09-19
KR101174440B1 (ko) 2012-08-17

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