WO2011109352A2 - Ultrafast and ultrasensitive novel photodetectors - Google Patents

Ultrafast and ultrasensitive novel photodetectors Download PDF

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Publication number
WO2011109352A2
WO2011109352A2 PCT/US2011/026626 US2011026626W WO2011109352A2 WO 2011109352 A2 WO2011109352 A2 WO 2011109352A2 US 2011026626 W US2011026626 W US 2011026626W WO 2011109352 A2 WO2011109352 A2 WO 2011109352A2
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WIPO (PCT)
Prior art keywords
channel structure
noble metal
metal nanoparticles
photodetector
spr
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PCT/US2011/026626
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French (fr)
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WO2011109352A3 (en
Inventor
Jin Young Kim
Ramses Martinez
Francesco Stellacci
Javier Martinez
Ricardo Garcia
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Consejo Superior de Investigaciones Cientificas CSIC
Massachusetts Institute of Technology
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Consejo Superior de Investigaciones Cientificas CSIC
Massachusetts Institute of Technology
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Publication of WO2011109352A3 publication Critical patent/WO2011109352A3/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Definitions

  • the invention is related to the field of photodetectors, and in particular to photodetectors having a hybrid plasmonic nanostructured arrangement.
  • Noble metallic nanostructures are interesting nano materials that exhibit strong optical resonance properties. Such an optical characteristic is dominated by surface plasmon generation. The phenomenon is understood to be caused by a collective oscillation of conduction electrons in the nanostructures under optical excitation and is critically dependent on the local structure and its geometry.
  • a photodetector includes a field effect transistor (FET) structure with a channel structure having one or more nanowire structures.
  • FET field effect transistor
  • Noble metal nanoparticles are positioned on the channel structure so as to produce a functionalized channel structure.
  • the functionalized channel structure exhibits pronounced surface plasmon resonance (SP ) absorption near the SPR frequency of the noble metal nanoparticles.
  • SP surface plasmon resonance
  • an optical device includes a FET structure with a channel structure having one or more nanowire structures.
  • Noble metal nanoparticles are positioned on the channel structure so as to produce a fiinctionalized channel structure.
  • the fiinctionalized channel structure exhibits pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of the noble metal nanoparticles.
  • SPR surface plasmon resonance
  • a method of forming a photodetector includes forming a FET structure with a channel structure having one or more nanowire structures. Also, the method includes depositing a plurality of noble metal nanoparticles on the channel structure so as to produce a fiinctionalized channel structure.
  • the fiinctionalized channel structure exhibits pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of the noble metal nanoparticles.
  • SPR surface plasmon resonance
  • FIG. 1 is a schematic diagram illustrating a novel photodetector formed in accordance with the invention
  • FIG. 2 is a graph illustrating the photoresponse of the novel photodetector of
  • FIG. 1 is a diagrammatic representation of FIG. 1 ;
  • FIG. 3 is a graph illustrating the current- voltage characteristics of the novel photodetector of FIG. 1 ;
  • FIG. 4A-4E are schematic diagrams illustrating the process flow for fabricating the novel photodetector of FIG. 1 ;
  • FIG. 5 is a transmission electron micrography (TEM) image of synthesized acetylene-terminated Au nanoparticles (NPs) used in accordance with the invention
  • FIG. 6A-6B are a schematic diagram illustrating the process for functionalizing silicon nanowires (Si NWs) coated with gold NPs used in accordance with the invention
  • FIGs, 7A-7C are graphs illustrating photoresponse properties measured using various geometrically different samples formed in accordance with the invention.
  • the invention is a photodetector having a hybrid piasmonic nanostructured arrangement that combines a conventional transistor with noble metal nanostructures to achieve ultrafast optical switching devices. It is based on an innovative design that is different from other photodetectors in the prior art. In particular the physical phenomena that lead to the detection of light are completely different in the invention as compared to others in the prior art.
  • FIG. 1 shows the photodetector 2 having a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) structure combined with noble metal nanoparticles (NPs) 12.
  • MOSFET metal-oxide-semiconductor field effect transistor
  • NPs noble metal nanoparticles
  • the photodetector 2 includes a doped silicon substrate 4 and a dielectric layer 10 positioned on the substrate 4.
  • the dielectric layer 10 can include silicon dioxide or similar materials.
  • a channel 8 and electrodes 6 are formed on the dielectric layer 10.
  • the channel 8 includes silicon nanowires (Si NWs) or other types of nanowire structures. Portions 14 of the channel 8 are positioned within the electrodes 6.
  • a plurality of ligand-coated gold nanoparticles (NPs) 12 are deposited at room temperature on the Si NWs of channel 8 to produce a hybrid piasmonic nanostructure 16, which provides the optical properties necessary for optical switching.
  • Other types of noble nanoparticles can be used instead of gold, such as silver, platinum or the like.
  • the electrodes 6 can be designated either the source or drain of the photodetector 2.
  • the photodetector 2 is fabricated using local oxidation techniques used in atomic force microscopy (AFM), resulting in the channel 8 having a width of 4nm and a height of 35 nm. In other embodiments, these dimensions can vary.
  • the ligand- coated gold nanoparticles (NTs) 12 have a size of 3.5 nm or higher, which are deposited on the Si NWs of channel 8
  • the novel photodetector 2 is more sensitive than commercial photodetectors, at present one can detect 5 nW light using the photodetector 2 while commercial photodetectors do not go below ⁇ ⁇ .
  • Commercial photodetectors speed is limited by the carrier diffiision length while the invention is based on sub-nanosecond processes and hence is only Hmited by self-capacitance. At present, it is measured at a response of 1 10 ps.
  • the photodetector 2 can sense any wavelength for which a plasmonic nanoparticle can have resonance and this includes UV and IR (all the way to mid IR) permitting for the formation of room temperature IR photodetectors.
  • the inventive photodetector 2 shows novel optical switching properties.
  • the hybrid plasmonic nanostructure 16 can exhibit pronounced surface piasmon resonance (SPR) absorption, near the SPR frequency of gold NPs.
  • SPR surface piasmon resonance
  • a strong wavelength-dependent and reversible photoresponse has been observed, as shown in FIG. 2.
  • Photoresponse measurements are conducted under alternate light illumination of different wavelengths and under dark conditions.
  • a fabricated MOSFET was also investigated under light illumination as a reference.
  • the inventive photodetector 2 showed typical transistor properties. Additionally, a current modification is observed upon illumination and the photoresponse properties are wavelength dependent. The photoresponse behavior at a SPR wavelength shows a larger difference in current between the on and off illumination conditions. The current change is nearly several times that observed using different wavelength light. It is understood that the enhanced photosensitive behavior observed for hybrid plasmonic nanostructures can be attributed to the SPR.
  • the invention provides a novel technique to fabricate photodetectors at the nanoscale with a sensitivity and speed 100 times higher than other commercial photodiodes.
  • This technique is based on the combination by the electrical transport properties of the silicon nanowires (Si NWs) and the surface plasmon resonance (SPR) of the noble-metal nanoparticles (NPs).
  • An Atomic Force Microscope with additional circuits is used to apply voltage pulses to fabricate Si NWs from a commercially available p-type silicon-on- insulator (SOI) substrate 32 having a 55 nm thick Si device layer 20 on top of a 100 nm buried oxide layer.
  • SOI silicon-on- insulator
  • the AFM nanolithography is based on the local oxidation of the top surface 20 of the SOI 32.
  • a mask 24, a long and narrow strip of silicon dioxide, is fabricated by applying voltage pulses between the AFM silicon probe 22 and the top surface 20 of the SOI 32.
  • the voltage pulse V induces the formation of a water meniscus and the subsequent anodic oxidation of the top surface 20.
  • the presented nanolithography technique has a high degree of flexibility and is compatible with many integrated circuit processes,
  • FIG. 4B shows a step that involves the chemical etching of the unmasked silicon 26 by Reactive Ion Etching (RIE).
  • FIG. 4C shows, after etching, the local oxide mask 28 being removed by HF and
  • FIG. 4D shows the wiring of 30 of the Si NWs to the micrometer sized platinum or gold source (S) and drain (D) contacts using electron beam lithography.
  • FIG. 4E shows the Si NWs being functionalized with Au NPs 34.
  • NPs synthesis was carried out in air by mixing metal sources and capping ligand in an organic solvent, such as benzene, toluene, or chloroform.
  • Acetylene- terminated Au NPs were prepared as fol!owings: 0.25mmol AuPPh3Cl was mixed with 0.1 ml of acetylene-terminated thiol in 20 ml of benzene to form a clear solution to which 2.5 mmol of tert-butylamine-borane complex was then added. The reaction was done at 80 °C for lh.
  • the synthesized NPs sizes are around 3.5 nm, as shown in FIG, 5.
  • SAMs self-assembled monolayers
  • FIG. 6B shows the Au NPs functionalization on the surface of a channel 42.
  • These NPs 40 have a diameter of 3.5 nm passivated with acetylene-terminated thiol groups.
  • Si NWs MOSFET metal oxide semiconductor FET
  • photoresponse properties were measured using various geometrically different samples, as shown in FIG. 7C.
  • the invention has many advantages relative to other commonly known photodetectors in the market and hence could be of interest to a truly large number of industry segments.
  • a few examples for possible application of this photodetector include: inexpensive large area photodetectors for cameras; low power photodetectors for portable electronics, deep UV or infrared detectors for scientific instruments as well as military or biomedical applications.

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  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

A photodetector is provided that includes a FET structure with a channel structure (8) having one or more nanowire structures. Noble metal nanoparticles (12) are positioned on the channel structure (8) so as to produce a functionalized channel structure. The functionalized channel structure exhibits pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of the noble metal nanoparticles (12).

Description

ULTRAFAST AND ULTRASENSITIVE NOVEL PHOTODETECTORS
PRIORITY INFORMATION The present application claims priority to U.S. Utility Application Serial No.
12/715,783, filed on March 2, 2010 and incorporated herein by reference in its entirety.
BACKGROUND OF THE INVENTION
The invention is related to the field of photodetectors, and in particular to photodetectors having a hybrid plasmonic nanostructured arrangement.
Noble metallic nanostructures are interesting nano materials that exhibit strong optical resonance properties. Such an optical characteristic is dominated by surface plasmon generation. The phenomenon is understood to be caused by a collective oscillation of conduction electrons in the nanostructures under optical excitation and is critically dependent on the local structure and its geometry.
However, noble metallic nanostructures have not been used to form optical structures, such as photodetectors. SUMMARY OF THE INVENTION
According to one aspect of the invention, there is provided a photodetector. The photodetector includes a field effect transistor (FET) structure with a channel structure having one or more nanowire structures. Noble metal nanoparticles are positioned on the channel structure so as to produce a functionalized channel structure. The functionalized channel structure exhibits pronounced surface plasmon resonance (SP ) absorption near the SPR frequency of the noble metal nanoparticles. According to another aspect of the invention, there is provided an optical device. The optical device includes a FET structure with a channel structure having one or more nanowire structures. Noble metal nanoparticles are positioned on the channel structure so as to produce a fiinctionalized channel structure. The fiinctionalized channel structure exhibits pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of the noble metal nanoparticles.
According to another aspect of the invention, there is provided a method of forming a photodetector. The method includes forming a FET structure with a channel structure having one or more nanowire structures. Also, the method includes depositing a plurality of noble metal nanoparticles on the channel structure so as to produce a fiinctionalized channel structure. The fiinctionalized channel structure exhibits pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of the noble metal nanoparticles. BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic diagram illustrating a novel photodetector formed in accordance with the invention;
FIG. 2 is a graph illustrating the photoresponse of the novel photodetector of
FIG. 1 ;
FIG. 3 is a graph illustrating the current- voltage characteristics of the novel photodetector of FIG. 1 ;
FIG. 4A-4E are schematic diagrams illustrating the process flow for fabricating the novel photodetector of FIG. 1 ;
FIG. 5 is a transmission electron micrography (TEM) image of synthesized acetylene-terminated Au nanoparticles (NPs) used in accordance with the invention; FIG. 6A-6B are a schematic diagram illustrating the process for functionalizing silicon nanowires (Si NWs) coated with gold NPs used in accordance with the invention;
FIGs, 7A-7C are graphs illustrating photoresponse properties measured using various geometrically different samples formed in accordance with the invention.
DETAILED DESCRIPTION OF THE INVENTION
The invention is a photodetector having a hybrid piasmonic nanostructured arrangement that combines a conventional transistor with noble metal nanostructures to achieve ultrafast optical switching devices. It is based on an innovative design that is different from other photodetectors in the prior art. In particular the physical phenomena that lead to the detection of light are completely different in the invention as compared to others in the prior art.
An example of a hybrid piasmonic nanostructured device is a photodetector 2 as shown in FIG. 1. In particular, FIG. 1 shows the photodetector 2 having a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) structure combined with noble metal nanoparticles (NPs) 12. The photodetector 2 includes a doped silicon substrate 4 and a dielectric layer 10 positioned on the substrate 4. The dielectric layer 10 can include silicon dioxide or similar materials. A channel 8 and electrodes 6 are formed on the dielectric layer 10. The channel 8 includes silicon nanowires (Si NWs) or other types of nanowire structures. Portions 14 of the channel 8 are positioned within the electrodes 6. A plurality of ligand-coated gold nanoparticles (NPs) 12 are deposited at room temperature on the Si NWs of channel 8 to produce a hybrid piasmonic nanostructure 16, which provides the optical properties necessary for optical switching. Other types of noble nanoparticles can be used instead of gold, such as silver, platinum or the like. The electrodes 6 can be designated either the source or drain of the photodetector 2.
The photodetector 2 is fabricated using local oxidation techniques used in atomic force microscopy (AFM), resulting in the channel 8 having a width of 4nm and a height of 35 nm. In other embodiments, these dimensions can vary. The ligand- coated gold nanoparticles (NTs) 12 have a size of 3.5 nm or higher, which are deposited on the Si NWs of channel 8
The novel photodetector 2 is more sensitive than commercial photodetectors, at present one can detect 5 nW light using the photodetector 2 while commercial photodetectors do not go below Ι μψ. Commercial photodetectors speed is limited by the carrier diffiision length while the invention is based on sub-nanosecond processes and hence is only Hmited by self-capacitance. At present, it is measured at a response of 1 10 ps. Importantly, the photodetector 2 can sense any wavelength for which a plasmonic nanoparticle can have resonance and this includes UV and IR (all the way to mid IR) permitting for the formation of room temperature IR photodetectors.
The inventive photodetector 2 shows novel optical switching properties. The hybrid plasmonic nanostructure 16 can exhibit pronounced surface piasmon resonance (SPR) absorption, near the SPR frequency of gold NPs. A strong wavelength- dependent and reversible photoresponse has been observed, as shown in FIG. 2. Photoresponse measurements are conducted under alternate light illumination of different wavelengths and under dark conditions. A fabricated MOSFET was also investigated under light illumination as a reference.
As shown in FIG. 3, the inventive photodetector 2 showed typical transistor properties. Additionally, a current modification is observed upon illumination and the photoresponse properties are wavelength dependent. The photoresponse behavior at a SPR wavelength shows a larger difference in current between the on and off illumination conditions. The current change is nearly several times that observed using different wavelength light. It is understood that the enhanced photosensitive behavior observed for hybrid plasmonic nanostructures can be attributed to the SPR.
The invention provides a novel technique to fabricate photodetectors at the nanoscale with a sensitivity and speed 100 times higher than other commercial photodiodes. This technique is based on the combination by the electrical transport properties of the silicon nanowires (Si NWs) and the surface plasmon resonance (SPR) of the noble-metal nanoparticles (NPs).
An Atomic Force Microscope (AFM) with additional circuits is used to apply voltage pulses to fabricate Si NWs from a commercially available p-type silicon-on- insulator (SOI) substrate 32 having a 55 nm thick Si device layer 20 on top of a 100 nm buried oxide layer. To make Si NWs, the AFM nanolithography is based on the local oxidation of the top surface 20 of the SOI 32.
In the step shown in FIG. 4A, a mask 24, a long and narrow strip of silicon dioxide, is fabricated by applying voltage pulses between the AFM silicon probe 22 and the top surface 20 of the SOI 32. The voltage pulse V induces the formation of a water meniscus and the subsequent anodic oxidation of the top surface 20. The presented nanolithography technique has a high degree of flexibility and is compatible with many integrated circuit processes,
FIG. 4B shows a step that involves the chemical etching of the unmasked silicon 26 by Reactive Ion Etching (RIE). FIG. 4C shows, after etching, the local oxide mask 28 being removed by HF and FIG. 4D shows the wiring of 30 of the Si NWs to the micrometer sized platinum or gold source (S) and drain (D) contacts using electron beam lithography. FIG. 4E shows the Si NWs being functionalized with Au NPs 34.
NPs synthesis was carried out in air by mixing metal sources and capping ligand in an organic solvent, such as benzene, toluene, or chloroform. Acetylene- terminated Au NPs were prepared as fol!owings: 0.25mmol AuPPh3Cl was mixed with 0.1 ml of acetylene-terminated thiol in 20 ml of benzene to form a clear solution to which 2.5 mmol of tert-butylamine-borane complex was then added. The reaction was done at 80 °C for lh. The synthesized NPs sizes are around 3.5 nm, as shown in FIG, 5.
The Au NPs functionalization on the surface of Si NWs is done by so-called
"click chemistry", as shown in F1G.6A: in this reaction the azide groups on the monolayer react with acetylene groups of a molecule of interest to form a stable triazole linkage. Here, self-assembled monolayers (SAMs) composed of acetylene- terminated groups on the surface of Au NPs reacted with azide containing groups on Si NWs via Cu(I) compound -catalyzed coupling. Also, FIG. 6B shows the Au NPs functionalization on the surface of a channel 42. These NPs 40 have a diameter of 3.5 nm passivated with acetylene-terminated thiol groups.
Photoresponse measurements based on the Si NWs MOSFET (metal oxide semiconductor FET) structures functionalized with gold NPs were conducted under alternate light illumination of different wavelengths and under dark conditions. The fabricated Si NWs under light illumination was also investigated as a reference. The fabricated Si NWs MOSFET structure without gold NPs showed no comparable fluctuation in current characteristics upon illumination.
In the case of Si NWs functionalized by Au NPs, a current modification is observed and the photoresponse properties are wavelength dependent. The photoresponse behavior at a SPR wavelength of 532 nm shows a larger difference in current between the illumination at on and off conditions. The current change is nearly five times that observed using light with different wavelengths. It is believed that the enhanced photosensitive behavior observed from the hybrid nanowires (NWs) devices can be attributed to the SPR, as the hybrid NWs devices have a pronounced SPR absorption at 532 nm.
Additionally, photoresponse properties, as shown in FIGs. 7A-7B, were measured using various geometrically different samples, as shown in FIG. 7C. One can observe that the sensitivity, on/off ratio and the speed of photoresponse properties, is remarkably increased by decreasing channel size.
The invention has many advantages relative to other commonly known photodetectors in the market and hence could be of interest to a truly large number of industry segments. A few examples for possible application of this photodetector include: inexpensive large area photodetectors for cameras; low power photodetectors for portable electronics, deep UV or infrared detectors for scientific instruments as well as military or biomedical applications.
Although the present invention has been shown and described with respect to several preferred embodiments thereof, various changes, omissions and additions to the form and detail thereof, may be made therein, without departing from the spirit and scope of the invention.
What is claimed is:

Claims

1. A photodetector comprising:
a FET structure with a channel structure having one or more nanowire structures; and a plurality of noble metal nanoparticles positioned on the channel structure so as to produce a flinctionalized channel structure, said functionalized channel structure exhibiting pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of said noble metal nanoparticles.
2. The photodetector of claim 1 , wherein said channel structure is positioned on a dielectric layer associated with a SOI structure.
3. The photodetector of claim 1, wherein said one or more nanowires comprise silicon.
4. The photodetector of claim 2, wherein said SOI structure comprises a heavily- doped silicon wafer.
5. The photodetector of claim 1 , wherein said noble metal nanoparticles comprise gold, silver, or platinum.
6. An optical device comprising:
a FET structure with a channel structure having one or more nanowire structures; and
a plurality of noble metal nanoparticles positioned on the channel structure so as to produce a functionalized channel structure, said functionalized channel structure exhibiting pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of said noble metal nanoparticles.
7. The optical device of claim 6, wherein said channel structure is positioned on a dielectric layer associated with a SQI structure.
8. The optical device of claim 6, where½ said one or more nano ires comprise silicon.
9. The optical device of claim 7, wherein said SOI structure comprises a doped silicon wafer. 19. The optical device of claim 6, wherein said noble metal nanoparticles comprise gold, silver, or platinum. 11. A method for forming a photodetector comprising:
forming a FET structure with a channel structure having one or more nanowire structures; and
depositing a plurality of noble metal nanoparticles on the channel structure so as to produce a functionalized channel structure, said functionalized channel structure exhibiting pronounced surface plasmon resonance (SPR) absorption near the SPR frequency of said noble metal nanoparticles. 12. The method of claim 11, wherein said channel structure is positioned on a dielectric layer associated with a SOI structure. 13. The method of claim 11 , wherein said one or more nanowires comprise silicon. 1 . The method of claim 12, wherein said SOI structure comprises a doped silicon wafer. 1. . The method of claim 11: wherein said noble metal nanoparticles comprise gold, silver, or platinum.
PCT/US2011/026626 2010-03-02 2011-03-01 Ultrafast and ultrasensitive novel photodetectors Ceased WO2011109352A2 (en)

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US12/715,783 US8154063B2 (en) 2010-03-02 2010-03-02 Ultrafast and ultrasensitive novel photodetectors

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US9714952B2 (en) * 2014-07-10 2017-07-25 International Business Machines Corporation Biosensors including surface resonance spectroscopy and semiconductor devices
TWI591809B (en) 2015-08-04 2017-07-11 國立交通大學 Light sensing device and its application
CN106257692A (en) * 2016-07-29 2016-12-28 东南大学 A kind of polarization sensitive photodetector
CN106449987B (en) * 2016-11-15 2019-05-14 华南理工大学 A kind of photoconductive organic semiconductor detector and preparation method thereof
CN114695575A (en) * 2022-03-30 2022-07-01 西安交通大学 Transistor based on plasma resonance, preparation method thereof and terahertz detector

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