WO2011078780A1 - Method for manufacturing a nanowire structure - Google Patents
Method for manufacturing a nanowire structure Download PDFInfo
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- WO2011078780A1 WO2011078780A1 PCT/SE2010/051461 SE2010051461W WO2011078780A1 WO 2011078780 A1 WO2011078780 A1 WO 2011078780A1 SE 2010051461 W SE2010051461 W SE 2010051461W WO 2011078780 A1 WO2011078780 A1 WO 2011078780A1
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- nanowires
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- nanowire
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- B82Y40/00—Manufacture or treatment of nanostructures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to manufacturing of nanowire devices, in particular nanowire devices comprising nanowires aligned and protruding in a predetermined direction from a substrate.
- nanowire based semiconductor devices offer unique properties due to the one-dimensional nature of the nanowires, improved flexibility in materials combinations due to less lattice matching restrictions and opportunities for novel device architectures.
- Suitable methods for growing semiconductor nanowires are known in the art and one basic process is nanowire formation on semiconductor substrates by particle-assisted growth or the so-called VLS (vapor-liquid- solid) mechanism, which is disclosed in e.g. US
- Particle-assisted growth can be achieved by for instance use of chemical beam epitaxy (CBE), metalorganic chemical vapor deposition (MOCVD),
- nanowire growth is not limited to VLS processes, for example the WO 2007/ 102781 shows that semiconductor nanowires may be grown on semiconductor substrates without the use of a particle as a catalyst. Nanowires have been utilised to realise devices such as solar cells, field effect transistors, light emitting diodes, thermoelectric elements, etc which in many cases outperform conventional devices based on planar technology.
- an MOCVD system is a complex vacuum system, which significantly
- the nanowires are grown on substrates which needs to withstand
- one object of the invention is to provide alternative methods for producing nanowire semiconductor devices that overcome the above- mentioned drawbacks of prior art. More particularly, it is an object to provide nanowires that have well-defined and controlled orientation independently of what substrate they are arranged on.
- the method comprises the steps of providing nanowires and applying an electric field over the population of nanowires, whereby an electric polarization in the nanowires makes them align along the electrical field.
- the nanowires are dispersed in a fluid (gas or liquid) during the steps of providing and aligning.
- an electric dipole in the wires may be induced to provide further directionality to and to enhance the alignment.
- a dipole may be induced by a pn-junction in the axial direction of the wire; by a Schottky diode between semiconductor and metallic sections of the wire; or by piezoelectric effects; and the effect may be enhanced by illuminating the wire during alignment, effectively inducing an open circuit photo voltage between the ends of the wire.
- the magnitude of this light induced dipole is essentially independent of the illumination strength, since the open circuit voltage of a photodiode varies only logarithmically with illumination.
- the nanowires When aligned, the nanowires can be fixated, preferably in contact with a substrate.
- the electrical field can be utilised to bring the nanowires in contact with the substrate, or an opposed surface.
- Charged nanowires are attracted to an oppositely charged surface in a uniform electric field.
- Uncharged nanowires are attracted to regions with higher electric fields, in the case of a field gradient.
- nanowires in a field gradient will experience both effects, either in the opposite or in the same direction.
- the force due to charge on the wire depends only on the charge and the electric field strength.
- the force due to the gradient depends on the field strength the wire dimensions and on the electric polarizability.
- nanowires with pn-junctions and/or illumination of the nanowires with light of a pre-determined wavelength(s) may assist in aligning the nanowires and/or enables selective alignment of one or more sub-populations of nanowires.
- the method may be performed in a continuous process, such as a roll-to-roll process wherein said population of nanowires are repeatedly provided and deposited in a pre-determined configuration along the substrate.
- One advantage of the present invention is that nanowires can be produced separately from the deposition of the nanowires onto a substrate. Hence a continuous process can be used. This simplifies the manufacturing of nanowire devices and improves the yield.
- Nanowires deposited with the method described here may be aligned vertically, with only a small angle away from the normal, or with a large spread of angles.
- the key is that the wires have a clear preferential direction, so that the majority of the wires have the same end toward the substrate.
- the vertical alignment may be more important, and the up/down orientation less so.
- Fig. 1 schematically illustrates alignment of a nanowire in accordance with the invention.
- Fig. 2 schematically illustrates the concept of classifying wires in an electric field gradient. Long and thin wires are more strongly attracted towards higher electric fields than shorter thicker ones. For charged wires of the right dimension, the forces due to charge and to gradient can be made to cancel.
- Fig. 3a schematically illustrates the dimensions and alignment angles of a nanowire in an electric field.
- Fig. 3b illustrates the concepts of a nanowire oriented "up” and “down” with respect to the electric field.
- Fig. 4 compares the theoretical alignment energy due to polarization (green, dashed) , light induced dipole (red, solid), and their sum (purple, dotted) for wires of two different dimensions but at the same electric field ( 1000 V/cm).
- the alignment of the longer wire (4b) is stronger than for the shorter one (4a), but the light induced dipole is too weak to be important.
- Fig. 5 compares the theoretical alignment energy due to polarization (green, dashed) , light induced dipole (red, solid), and their sum (purple, dotted) for wires of the same dimension but at different electric fields (1000 V/cm and 300 V/cm, respectively).
- the alignment is stronger than at lower field (5b), but in the latter case the light induced dipole is strong enough to dominate the alignment and provide a preferential direction.
- Fig. 6 illustrates the alignment energy for the "up” (red, solid) and “down” (green, dashed) directions for the same wire as in 4a at varying electric fields.
- the "up” energy is greater than 10 kT (i.e., to overcome the Brownian rotation energy of 1 kT), but where the "down" energy is low.
- the "up” energy is greater than 10 kT (i.e., to overcome the Brownian rotation energy of 1 kT), but where the "down” energy is low.
- Fig. 7 schematically illustrates the regimes where wire alignment of different kinds is at play.
- the axes are not necessarily linear and the borders between the regimes are not to be seen as neither as sharp nor as simply shaped as the drawing suggests.
- Fig. 8 illustrates some of the primary ways to apply the invention.
- the components can be rearranged in many ways, and in different sequences too complex to illustrate here.
- wire size classification may be used in combination with illumination at different wavelengths and in series with vertical alignment to selectively deposit wires according to both size and composition.
- the method of the present invention comprises the steps of providing nanowires and applying an electrical field over the nanowires, whereby an electrical dipole and/or dipole moment in the nanowires makes them align along the electrical field.
- the aligned nanowires In order to manufacture a structure comprising aligned nanowires, the aligned nanowires have to be fixated in aligned position. Furthermore, the nanowires are preferably connected electrically and/or optically in one or both ends. Thus, the aligned nanowires are preferably deposited onto a substrate.
- the pre-fabricated nanowires may be dispersed in a fluid before applying the electric field, and accordingly the fluid containing the nanowires can be applied to the substrate before applying the electrical field.
- the nanowires can be pre-fabricated before being provided for alignment.
- Nanowires can be fabricated using one of the afore-mentioned methods where nanowires are epitaxially grown on substrates. After growth the nanowires are removed from their substrate and preferably dispersed in a fluid (gas or liquid). The nanowires can also be fabricated using liquid solution-based chemistry or gas-phase synthesis where the nanowires grow from seed particles. In these processes the nanowires can remain in the remainder of the liquid or gas, respectively or be transferred to a suitable fluid, which also may be a liquid or a gas.
- Unipolar nanowires, nanowires with axial pn-junctions, nanowires with radial pn-junctions, heterostructure nanowires, etc. may be used and are generally fabricated using one of the above-mentioned techniques.
- Nanowires with axial pn- junctions are grown in a in a single process, where the seed particle contains a dopant for one polarity, and where the opposite polarity is achieved when the dopant is exhausted or in a more complex process, where dopants and source materials are explicitly introduced during the process.
- Nanowires with radial pn- junctions are grown in a two-stage process, where growth conditions are changed to give radial growth, but otherwise similar to the fabrication of nanowires with axial pn-junctions. Nanowires may be given a net electric charge either during growth or in a separate step.
- the electric dipole in the nanowires can, by way of example, be accomplished by one or a combination of the following:
- An electric field will induce an electric polarization in any conducting, semiconducting or insulating nanowire, and the nanowires will orient themselves along the electric field (fig. 1).
- the nanowire will be oriented along the
- a unipolar ly doped nanowire with an axial gradient in the doping will be preferentially oriented, since the more highly p(n)-doped end will be more easily charged positively (negatively) , directing this end up (down) in the electric field.
- a nanowire comprising a p-doped end and an n-doped end forming a a p II -junction in-between will be more easily polarizable than an unipolar nanowire.
- the p-doped end will become positively charged and the n-doped end will be negatively charged when exposed to the electrical field, and hence the nanowire will be oriented in an unequivocal direction with the p-doped end pointing in the direction of the electric field.
- nanowires having different band gaps can be selectively aligned since wires that do not absorb the light will have a much weaker dipole.
- the pn-junction used for alignment may be a functional part when used in a device comprising the aligned nanowires.
- the nanowires may comprise additional functional sections that are not intentionally used for alignment.
- E ⁇ j scales as the square of the wire diameter but does not depend on its length
- the alignment is weak or non-existent, meaning that the alignment energy is on the order of or below kT, which is the average energy of Brownian rotation per wire; k is the Boltzmann constant and T is the absolute temperature (300 K).
- Deposition of the aligned nanowires can, by way of example, be done by one or a combination of the following:
- Nanowires with a net charge will move in the electric field; thus
- negatively charged nanowires will move downward, where a substrate can be placed.
- a sheath flow may be introduced to prevent deposition on one side; b. substrates may be placed on both sides of the nanowires for deposition of oppositely aligned wires; and c. the distance between electrodes can be made smaller than the wire length, forcing the wires to touch the substrate, either by moving the plates closer or by designing in a constriction in the flow of nanowire- containing fluid.
- Dipoles with or without net charge will move in an electric field gradient, such that the wires are attracted towards higher fields. This effect can be used both for deposition and for classification of nanowires (fig. 2).
- the gradient force can be balanced by a force due to the charged, allowing further control of size and material dependent classification.
- the field gradient will influence deposition; in combination with wavelength- selective dipole generation, wires can be selectively placed according to composition and/ or size.
- a structured electrode behind the substrate e.g., a bed of nails or array of ridges, will produce a pattern or dots or stripes; an alternating potential will produce areas with oppositely oriented wires.
- Deposition may be locally enhanced or inhibited by patterns of surface charge on the substrate; the deposition may be made self- limiting when the charged areas are neutralized by the charges from the deposited wires
- Wires may be deposited through thermophoresis, wherein wires suspended in a fluid will move towards lower temperature regions in a thermal gradient, i.e. , deposited on a cold wall and/or repelled from a hot wall.
- Intensely focused (laser) light and magnetic fields can in some cases be used to trap nanowires locally, e.g., by the optical tweezer or magnetic trap effects.
- the electric field may be generated using two opposed electrodes, for example two parallel plates, and applying a voltage between the electrodes.
- the substrate used can also function as one of the electrodes.
- the substrate for example in the form of a web, foil or sheet may be fed between the electrodes (or over one of the electrodes if the substrate is used as one electrode) and a pulsating or periodic voltage may be applied to the electrodes to generate a varying electrical field and hence a varying orientation of the aligned nanowires.
- nanowires can be deposited:
- substrates in form of webs, foils, or sheets preferably in a roll-to-roll process, wherein the substrate is passed through a point, stripe or region of deposition, much like a printing press;
- the wire-containing liquid in the case of wires dispersed in a liquid, as a colloidal suspension, can be applied to the substrate, and the wires be aligned
- the sticky material may be very thin, so that only the wire ends are stuck;
- the sticky material has a thickness of the same order as the length of the nanowires.
- the liquid may comprise monomers to make the polymer on the substrate gradually thicker, thereby encapsulating the nanowires
- the polarity/ direction of the nanowires may vary in, e.g., stripes or checkerboard patterns
- the nanowires are of different types and sorted by inducing the electrical dipoles in a wavelength selective way;
- nanowire in this patent application is meant any elongated structure with at least one dimension smaller than 1 ⁇ . Typical examples include, but are not limited to:
- semiconductor nanowires with a diameter of 50 - 500 nm and a length of 1 - 10 ⁇ , produced by, e.g., MOCVD growth, liquid solution chemistry, gas phase growth.
- Typical materials are III-V or III-N semiconductors (GaAs, InP, GaSb, GalnN and related alloys), Silicon, Germanium, or II-VI
- nanowires may be made from magnetic, superconducting or normal metals
- biological nanofibers e.g., cellulose, proteins, macromolecules and
- PV cells where the light-absorption and charge- separation takes place in the nanowires alone, i.e. where the nanowires contain pn- junctions or other rectifying mechanisms.
- PV devices include a densely packed array of nanowires, where the majority of the wires are vertically aligned and connected with the same polarity. It would also include a transparent contact either from the top or through a transparent substrate, connecting all the wire ends in parallel.
- LEDs Light emitting diodes
- Such LED devices would include an array of nanowires, which may be contacted either with the same polarity or with random polarity. In the latter case, the structure would function as a rectifier, suited for connection directly to AC voltage. An LED array would also not need to be extremely dense, if the objective is to produce large area light emitting surfaces, for example ceramic tiles or even wallpaper.
- the nanowires constitute part of the rectifying mechanism, and the other part(s) are in the substrate; the substrate is, e.g., p-type and the wires n-type.
- the substrate is, e.g., p-type and the wires n-type.
- Such a PV device would be made from densely packed nanowires, but here the up/down orientation of the wires is less important, and consequently the processing simpler.
- the density of the wires may be lower than in example 1 above, if the carrier diffusion length in the substrate is large enough.
- the substrate is, e.g., p-type and the wires n-type.
- the substrate is, e.g., p-type and the wires n-type.
- PV cells where the nanowires constitute part of the rectifying mechanism, and the other part(s) are in the matrix surrounding the wires after
- PV device e.g., p-type wires in an n-type conducting oxide or polymer.
- a PV device may be fabricated on very simple substrates.
- PV cells where the substrate itself is a photovoltaic cell, and where the nanowires are designed to absorb light above or below the bandgap of the substrate, thereby creating a tandem photovoltaic cell.
- the nanowire part of the tandem cell may be fabricated according to example 1 , 3 or 5 above.
- the nanowires may be arranged in patterns, e.g. stripes, to allow for spectrally resolved light absorption by means of a prism, to achieve multi-junction PV functionality; or light emission with adjustable color temperature where each stripe is contacted separately.
- the nanowires also give a built-in nanostructuring of the top surface, which may be advantageous for both light absorption in the case of PV cells and for light emission in the case of LEDs.
- Thermoelectric cells wherein the one-dimensional character of nanowires is used to improve the way thermal gradients can be used to generate electrical power. Furthermore, by the controlled deposition of separate fields of n-doped and p-doped nanowires a Peltier element is formed, which can be used for cooling or heating applications, in the conversion of electrical power to thermal gradients.
- Batteries where one or both electrodes are prepared by this method and thus are constructed out of a nanowire structure.
- the small diameter of the nanowires makes them insensitive to strain and thus to changes in diameter that are accompanied with the volume change during battery cycling.
- Fuel cells, electrolysis or photolysis cells where the main material is comprised out of nanowire structures which gives them advantages over other materials in terms of insensitivity to process-induced strain, surface- to-volume ratio, as well as process fluid interaction with the structures.
- Microelectronic or data storage devices may be formed in nanowires which are deposited from the aerosol phase.
- a device for classifying nanowires according to size and/or material wherein a flow of charged or uncharged nanowires passes through an electric field gradient.
- Longer, thinner and more polarizable wires are subjected to stronger attractive forces towards higher electric field regions, and can thus be classified in a manner reminiscent of a mass spectrometer.
- forces may be balanced for greater selectivity.
- Nanocomposite materials where nanowires are dispersed in, e.g., a polymer matrix, leading to, e.g., enhanced mechanical strength, increased electrical conductivity, improved gas permeability properties, etc.
- n a n o c o m po s i t e s may also be sensitive to applied external forces and thus used as sensors.
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US13/518,259 US9305766B2 (en) | 2009-12-22 | 2010-12-22 | Method for manufacturing a nanowire structure |
EP10839901.5A EP2516323B1 (en) | 2009-12-22 | 2010-12-22 | Method for manufacturing a nanowire structure |
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HK13105396.4A HK1178507A1 (en) | 2009-12-22 | 2013-05-06 | Method for manufacturing a nanowire structure |
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Also Published As
Publication number | Publication date |
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US9305766B2 (en) | 2016-04-05 |
US20160268374A1 (en) | 2016-09-15 |
JP6383702B2 (en) | 2018-08-29 |
CN102770367B (en) | 2015-08-19 |
JP2013515370A (en) | 2013-05-02 |
JP5753192B2 (en) | 2015-07-22 |
JP2015216379A (en) | 2015-12-03 |
EP2516323A1 (en) | 2012-10-31 |
US9954060B2 (en) | 2018-04-24 |
HK1178507A1 (en) | 2013-09-13 |
CN105347297B (en) | 2018-01-09 |
KR101914651B1 (en) | 2018-11-05 |
CN105347297A (en) | 2016-02-24 |
EP2516323B1 (en) | 2018-11-07 |
CN102770367A (en) | 2012-11-07 |
KR20120130751A (en) | 2012-12-03 |
EP2516323A4 (en) | 2017-06-28 |
US20130203242A1 (en) | 2013-08-08 |
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