WO2011042835A1 - Electrowetting device - Google Patents
Electrowetting device Download PDFInfo
- Publication number
- WO2011042835A1 WO2011042835A1 PCT/IB2010/054378 IB2010054378W WO2011042835A1 WO 2011042835 A1 WO2011042835 A1 WO 2011042835A1 IB 2010054378 W IB2010054378 W IB 2010054378W WO 2011042835 A1 WO2011042835 A1 WO 2011042835A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrowetting
- dielectric
- electrode
- electrowetting device
- electrolytic solution
- Prior art date
Links
- 239000012530 fluid Substances 0.000 claims abstract description 33
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 29
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 26
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000007743 anodising Methods 0.000 claims abstract description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 34
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 230000002209 hydrophobic effect Effects 0.000 claims description 12
- 150000007524 organic acids Chemical class 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 9
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229920002313 fluoropolymer Polymers 0.000 claims description 4
- 239000004811 fluoropolymer Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 claims description 2
- 150000001860 citric acid derivatives Chemical class 0.000 claims description 2
- 235000021317 phosphate Nutrition 0.000 claims description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 2
- 150000003892 tartrate salts Chemical class 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000009736 wetting Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 50
- 238000002048 anodisation reaction Methods 0.000 description 46
- 239000000243 solution Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 26
- 239000000758 substrate Substances 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 238000004090 dissolution Methods 0.000 description 12
- -1 polyethylene terephthalate Polymers 0.000 description 11
- 235000005985 organic acids Nutrition 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 8
- 229920002545 silicone oil Polymers 0.000 description 8
- 229920006362 Teflon® Polymers 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000003929 acidic solution Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 230000005661 hydrophobic surface Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 239000004254 Ammonium phosphate Substances 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 2
- 235000019289 ammonium phosphates Nutrition 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000004446 fluoropolymer coating Substances 0.000 description 2
- 230000035876 healing Effects 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- 238000002032 lab-on-a-chip Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- HPQUMJNDQVOTAZ-UHFFFAOYSA-N 2,2-dihydroxypropanoic acid Chemical compound CC(O)(O)C(O)=O HPQUMJNDQVOTAZ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- OXQGTIUCKGYOAA-UHFFFAOYSA-N 2-Ethylbutanoic acid Chemical compound CCC(CC)C(O)=O OXQGTIUCKGYOAA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- FEWFXBUNENSNBQ-UHFFFAOYSA-N 2-hydroxyacrylic acid Chemical compound OC(=C)C(O)=O FEWFXBUNENSNBQ-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ALRHLSYJTWAHJZ-UHFFFAOYSA-N 3-hydroxypropionic acid Chemical compound OCCC(O)=O ALRHLSYJTWAHJZ-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- MHPUGCYGQWGLJL-UHFFFAOYSA-N 5-methyl-hexanoic acid Chemical compound CC(C)CCCC(O)=O MHPUGCYGQWGLJL-UHFFFAOYSA-N 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229940010556 ammonium phosphate Drugs 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical class FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000006574 non-aromatic ring group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 229960004249 sodium acetate Drugs 0.000 description 1
- 239000001476 sodium potassium tartrate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N tetrahydrofuran Substances C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/12—Fluid-filled or evacuated lenses
- G02B3/14—Fluid-filled or evacuated lenses of variable focal length
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/06—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of fluids in transparent cells
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/004—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid
- G02B26/005—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid based on electrowetting
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/12—Function characteristic spatial light modulator
Definitions
- the first fluid of the electrowetting composition is an electrolytic anodization solution capable of anodizing the valve metal of the first electrode to form a metal oxide at the operating voltage difference.
- the first fluid is susceptible to an electric field.
- the second fluid of the electrowetting device that is immiscible with the first fluid, is much less susceptible to an electric field than the first fluid.
- the second fluid may be an oil, for example silicone oil, or air.
- the electrolytic anodization solution may be any such solution as used in an electrolytic capacitor, as these solutions provide the self-repairing (or healing) mechanism as described above, while maintaining the integrity of the dielectric. Additionally, for use in the electrowetting device according to the invention the electrolytic anodization solution does not have to comply with the same conductivity requirements as for electrolytic capacitors, in that a relatively high electrical conductivity is not required. Generally, the lower the concentration of ions in the electrolytic anodization solution, the lower the probability for dielectric breakdown, and the higher the reliability of the electrowetting device.
- the electrolytic anodization solution preferably comprises a polar solvent such as water.
- the dielectric may be a stack of layers, wherein the stack comprises a hydrophobic layer that is in contact with the electrowetting composition.
- the hydrophobic layer comprises an amorphous fluoropolymer, such as Teflon®.
- valve metal of the first electrode may be chosen from the group consisting of magnesium, aluminum, titanium, vanadium, chromium, zinc, zirconium, niobium, antimony, hafnium, tantalum, tungsten, and bismuth.
- An alternative method for applying AC voltages to the electrowettmg device according to the invention is to use a capacitor in series with the device, in such a way that a so-called "back-to-back" configuration is created.
- a capacitor is inserted between an electrode and the electrowettmg composition. This method is known for driving electrolytic capacitors with an AC voltage.
- a cell such as that shown in Fig. 1 may have a dielectric that, instead of the parylene layer 140, comprises a metal oxide layer, preferably an aluminum oxide layer that is obtained by anodization of the aluminum layer 130, or a polyethylene terephthalate (PET) layer.
- the aluminum layer 130 may be provided on a carrier, such as a glass carrier or a silicon carrier.
- Fig. 2 shows cross-sections of a variable-focus lens 200, being an example of an electrowetting device according to the invention.
- the metallic spacer 230 is the first electrode of the variable-focus lens 200, it comprises a valve metal, and it is coated with a dielectric in the form of a metal oxide layer 231, separating the metallic spacer 230 from the electrowetting composition.
- the first transparent substrate 210 is coated with a further electrode in the form of a hydrophilic transparent conductive coating 211.
- the variable-focus lens 200 also comprises a DC voltage source in the form of a battery 260, of which the positive terminal is connected to the metallic spacer 230, and the negative terminal to the hydrophilic conductive coating 21 1.
- the negative terminal is preferably grounded, in order to keep the electrolytic solution 240 at the same potential as the surroundings, thus preventing potential differences between the electrolytic solution 240 and the surroundings to distort the fluid-fluid interface.
- the aqueous electrolytic solution 240 of the electrowetting composition is capable of anodizing the valve metal of the metallic spacer 230 to form a metal oxide.
- An aluminum substrate is placed in an aqueous solution of 8 % citric acid and 0.5 % phosphoric acid.
- Anodization of the aluminum substrate is performed by applying a voltage difference between the aqueous solution and the aluminum substrate, with the aluminum substrate forming the anode, while the cathode consists of a plate of stainless steel.
- the electrical current density is about 10 mA/cm 2
- the starting anodization voltage is lower than 150 V
- the end anodization voltage is 150 V.
- the pH of the aqueous solution of citric acid is increased to prevent etching of aluminum and aluminum oxide when no voltage is applied to the device, while maintaining anodization capability and good electrowetting performance.
- the pH of the aqueous solution of citric acid can be increased by adding a solution of ammonium
- the dielectric may be provided by sputtering, evaporating, annealing a paste, atomic layer deposition from a gaseous precursor, chemical vapour deposition, thermal oxidation, eloxation, or anodization.
- the applied voltage difference determines the thickness of the dielectric.
- the attainable thickness is 1.4 nm/V
- a tantalum oxide layer 2 nm/V For example, for an aluminum oxide layer the attainable thickness is 1.4 nm/V, and for a tantalum oxide layer 2 nm/V.
- the inventors have realized that, for a certain thickness of the dielectric, the voltage used to operate the electrowetting device is much lower than the voltage required to grow the dielectric by anodization of the first electrode. This implies that the dielectric does not grow during operation of the electrowetting device. Only in case of a failure in the dielectric the grow process will start, but the dielectric will never become thicker than it was originally designed.
- an electrowettmg device comprising dielectric in the form of a 100 nm tantalum oxide layer is typically operated at an operating voltage of 10 V, while the tantalum oxide layer has been grown at 50 V.
- the difference becomes even larger due to the square -root dependence of electrowettmg driving voltage on dielectric thickness, as compared to the linearly dependency of dielectric thickness on anodization voltage.
- AC driving is preferably performed such that on average a net positive voltage is applied to the first electrode, to prevent the dielectric should from dissolving.
- Charge build up may already be prevented by sweeping the voltage between a high positive value (work point) and a low value (decharge point), for example 0 V.
- a first way to use AC driving such that on average a net positive voltage is applied to the first electrode, is by adding a positive voltage offset to the AC driving voltage.
- Table 1 gives the DC offset at which the dissolution and anodization processes are equally strong (DC offset threshold), as a function of AC driving frequency.
- DC offset threshold the DC offset at which the dissolution and anodization processes are equally strong.
- the DC offset is also given as a percentage of the maximum voltage amplitude, which is 7 V in this experiment.
- Table 1 DC offset threshold as a function of AC driving frequency, for a device using an aqueous 8 % citric acid solution, surrounded by silicone oil, on a perforated parylene-C coating having a thickness of 300 nm deposited on aluminum.
- a second way to use AC driving such that on average a net positive voltage is applied to the first electrode is by performing AC driving using a modified duty cycle.
- the competing anodization and dissolution processes are dependent on duration and magnitude of the applied voltages.
- the duration of the period wherein a positive voltage is applied is relatively short compared to the duration of the period wherein a negative voltage is applied, the dissolution process might win and the anodized layer could be destroyed. Or, in case there is no anodized layer yet (e.g. in the case of perforated parylene deposited on aluminium), no anodized layer will be formed.
- the duration of the period wherein a positive voltage is applied is relatively long, the anodization process might win, but charge removal during the (relatively short) period wherein a negative voltage is applied could be less effective.
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- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
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Abstract
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Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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US13/499,918 US8854739B2 (en) | 2009-10-06 | 2010-09-29 | Electrowetting device |
BR112012007656-6A BR112012007656B1 (en) | 2009-10-06 | 2010-09-29 | ELECTRIC WETTING DEVICE, METHOD OF MANUFACTURING THE ELECTRIC WETTING DEVICE AND METHOD OF OPERATING THE ELECTRIC WETTING DEVICE |
JP2012532693A JP2013506881A (en) | 2009-10-06 | 2010-09-29 | Electrowetting device |
CN201080045238.6A CN102576096B (en) | 2009-10-06 | 2010-09-29 | Electrowetting device |
KR1020187015301A KR101982348B1 (en) | 2009-10-06 | 2010-09-29 | Electrowetting device |
RU2012118592/28A RU2535242C2 (en) | 2009-10-06 | 2010-09-29 | Electrowetting device |
EP10765683.7A EP2486433B1 (en) | 2009-10-06 | 2010-09-29 | Electrowetting device |
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EP09172296 | 2009-10-06 | ||
EP09172296.7 | 2009-10-06 |
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WO2011042835A1 true WO2011042835A1 (en) | 2011-04-14 |
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PCT/IB2010/054378 WO2011042835A1 (en) | 2009-10-06 | 2010-09-29 | Electrowetting device |
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US (1) | US8854739B2 (en) |
EP (1) | EP2486433B1 (en) |
JP (1) | JP2013506881A (en) |
KR (2) | KR101982348B1 (en) |
CN (1) | CN102576096B (en) |
BR (1) | BR112012007656B1 (en) |
RU (1) | RU2535242C2 (en) |
WO (1) | WO2011042835A1 (en) |
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- 2010-09-29 CN CN201080045238.6A patent/CN102576096B/en active Active
- 2010-09-29 RU RU2012118592/28A patent/RU2535242C2/en active
- 2010-09-29 KR KR1020127011606A patent/KR20120093260A/en not_active Ceased
- 2010-09-29 BR BR112012007656-6A patent/BR112012007656B1/en active IP Right Grant
- 2010-09-29 JP JP2012532693A patent/JP2013506881A/en active Pending
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Also Published As
Publication number | Publication date |
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KR20180063362A (en) | 2018-06-11 |
US20120200939A1 (en) | 2012-08-09 |
BR112012007656B1 (en) | 2020-09-24 |
EP2486433B1 (en) | 2021-03-17 |
RU2535242C2 (en) | 2014-12-10 |
JP2013506881A (en) | 2013-02-28 |
CN102576096B (en) | 2015-03-25 |
BR112012007656A8 (en) | 2017-10-10 |
CN102576096A (en) | 2012-07-11 |
KR20120093260A (en) | 2012-08-22 |
US8854739B2 (en) | 2014-10-07 |
KR101982348B1 (en) | 2019-05-24 |
EP2486433A1 (en) | 2012-08-15 |
RU2012118592A (en) | 2013-11-20 |
BR112012007656A2 (en) | 2017-09-12 |
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