WO2011013697A1 - Film-forming apparatus - Google Patents

Film-forming apparatus Download PDF

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Publication number
WO2011013697A1
WO2011013697A1 PCT/JP2010/062687 JP2010062687W WO2011013697A1 WO 2011013697 A1 WO2011013697 A1 WO 2011013697A1 JP 2010062687 W JP2010062687 W JP 2010062687W WO 2011013697 A1 WO2011013697 A1 WO 2011013697A1
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WO
WIPO (PCT)
Prior art keywords
film forming
substrate
electrode unit
chamber
film
Prior art date
Application number
PCT/JP2010/062687
Other languages
French (fr)
Japanese (ja)
Inventor
康男 清水
勝彦 森
浩一 松本
智彦 岡山
和 森岡
幸一 播磨
邦彦 岡嶋
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2011524807A priority Critical patent/JPWO2011013697A1/en
Priority to CN2010800256304A priority patent/CN102473608A/en
Publication of WO2011013697A1 publication Critical patent/WO2011013697A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically

Definitions

  • the present invention relates to a film forming apparatus used for manufacturing a thin film solar cell, for example.
  • This application claims priority based on Japanese Patent Application No. 2009-179413 filed on Jul. 31, 2009, the contents of which are incorporated herein by reference.
  • a plasma CVD apparatus As an apparatus for forming a thin film Si layer (semiconductor layer) of this thin film solar cell, a plasma CVD apparatus is often used.
  • a plasma CVD apparatus a single-wafer PE-CVD (plasma CVD) apparatus, an inline PE-CVD apparatus, a batch PE-CVD apparatus, and the like are known.
  • the film thickness required for the ⁇ c-Si layer of the tandem solar cell is approximately 5 times the film thickness of the amorphous Si layer (approximately 1.5 ⁇ m). ) Must be secured. Further, in the process of forming the ⁇ c-Si layer, it is necessary to form a high-quality microcrystal film uniformly, and there is a limit to increasing the film formation rate. For this reason, it is required to improve productivity by increasing the number of batches. That is, there is a demand for an apparatus that realizes a high deposition rate at a low film formation rate.
  • the CVD apparatus of Patent Document 1 includes a substrate (substrate) delivery / dispensing device, a film forming chamber group that can store a plurality of substrates, a moving chamber, and a chamber moving device.
  • An airtight shutter is provided at the entrance / exit of the film forming chamber (the entrance / exit of the film forming chamber).
  • the entrance / exit of the transfer chamber (storage chamber entrance / exit) is always open.
  • the chamber When the film is formed on the substrate, the chamber is moved to the position of the substrate delivery / dispensing device by the chamber moving device, and the substrate carrier is transferred from the substrate delivery / dispensing device to the movement chamber. Further, the chamber moving device joins the moving chamber to the film forming chamber and moves the substrate carrier to the film forming chamber.
  • the film forming chamber In the film forming chamber, a film is formed on the substrate.
  • the film forming chamber is provided with a plurality of heaters used for heating the substrate and a plurality of electrodes used for generating plasma of a film forming gas supplied to the film forming chamber.
  • the plurality of heaters and the plurality of electrodes are alternately arranged in parallel, and the base is disposed between the heater and the electrodes.
  • the film when the film is formed on the substrate, the film may be formed on the heater or the electrode as the temperature in the film forming chamber increases. If a film is formed on these heaters or electrodes, an appropriate film may not be formed on the substrate, or the production efficiency may be reduced. For this reason, periodic maintenance work such as replacement of a heater or an electrode is required according to the frequency of use of the CVD apparatus.
  • the present invention has been made in order to solve the above-described problems, and provides a film forming apparatus capable of reducing the work load generated in the maintenance work.
  • a film formation apparatus of one embodiment of the present invention includes an upper portion in the direction of gravity, and the substrate is disposed so that a film formation surface of the substrate is parallel to the direction of gravity.
  • An electrode unit having a film chamber, a flat cathode to which a voltage is applied, and an anode spaced apart from the cathode and arranged detachably (detachably) in the film formation chamber; And a detachable rail provided along the direction in which the electrode unit is pulled out from the film forming chamber and guiding the electrode unit.
  • the electrode unit having the cathode and the anode can be separated from the film forming chamber, and maintenance work can be performed in a single electrode unit. For this reason, a large work space can be secured. Further, the electrode unit is guided by the detachable rail provided in the upper part of the film forming chamber in the direction of gravity, and the electrode unit moves along the extending direction of the detachable rail. Moreover, the electrode unit is suspended by the attachment / detachment rail. In this structure, for example, the electrode unit can be easily pulled out from the film forming chamber even when the floor surface on which the film forming apparatus is installed is uneven. Therefore, it is possible to reduce the work load generated in the maintenance work.
  • the electrode unit can be easily reattached to the film forming apparatus simply by moving the electrode unit drawn out from the film forming chamber toward the film forming apparatus along the attachment / detachment rail. Therefore, the reproducibility that the position of the electrode unit before the electrode unit is pulled out from the film forming chamber and the position where the electrode unit is mounted in the film forming chamber after the electrode unit is pulled out can be improved. Can be performed with high accuracy.
  • the electrode unit constitutes one surface of the film forming chamber, and is separated from the film forming chamber in a state where the cathode and the anode are attached to the electrode unit. It is preferable to have a side plate part that is possible. In the film forming apparatus having such a configuration, part of the electrode unit and part of the film forming chamber can be used, so that the structure of the film forming apparatus can be prevented from becoming complicated and the number of parts can be reduced. It becomes possible to make it.
  • the film forming apparatus of one embodiment of the present invention preferably includes a cable bear disposed (laid) on the detachable rail, and a cable connected to the electrode unit is disposed (routed).
  • a cable bear disposed (laid) on the detachable rail
  • a cable connected to the electrode unit is disposed (routed).
  • the length of the detachable rail (arrangement length, laying length) is set so that at least the entire cathode and the anode are exposed to the outside of the film forming chamber. It is preferable that the distance is determined according to the distance that the electrode unit moves. In the film forming apparatus having such a configuration, a work space in the maintenance work of the single electrode unit can be reliably ensured.
  • the electrode unit preferably includes a carriage.
  • the load of the electrode unit applied to the attachment / detachment rail can be distributed to the carriage. For this reason, it is possible to prevent damage to the detachable rail accompanying the increase in the weight of the electrode unit.
  • the electrode unit can be moved by using the detachable rail as a guide and mainly using a carriage.
  • mount a heavy RF power source high frequency power source
  • the distance between the RF power source and the electrode unit can be shortened, so that the cable connecting the RF power source and the electrode unit can be shortened.
  • the electrode unit having the cathode and the anode can be separated from the film forming chamber, and the maintenance work can be performed in the single electrode unit. For this reason, a large work space can be secured. Further, the electrode unit is guided by a mounting / dismounting rail provided in the upper part of the film forming chamber in the direction of gravity, and the electrode unit moves along the extending direction of the mounting / detaching rail. In this structure, for example, the electrode unit can be easily pulled out from the film forming chamber even when the floor surface on which the film forming apparatus is installed is uneven. Therefore, it is possible to reduce the work load generated in the maintenance work.
  • FIG. 3 is a perspective view schematically showing a configuration of a film forming chamber in an embodiment of the present invention, which is a perspective view different from FIG. 2. It is a side view which shows the film-forming chamber in embodiment of this invention. It is a perspective view which shows roughly the structure of the electrode unit in embodiment of this invention.
  • FIG. 6 is a perspective view schematically showing a configuration of an electrode unit in the embodiment of the present invention, which is a perspective view different from FIG. 5. It is a fragmentary sectional view showing a cathode unit and an anode in an embodiment of the present invention. It is a perspective view which shows the carrier in embodiment of this invention.
  • FIG. 1 is a diagram schematically showing a configuration of a film forming apparatus.
  • the film formation apparatus 10 includes a film formation chamber 11, a preparation / removal chamber 13, a substrate removal chamber 15, a substrate removal robot 17, and a substrate storage cassette 19.
  • a microcrystal silicon film can be formed on a plurality of substrates W simultaneously.
  • the preparation / removal chamber 13 can simultaneously accommodate a substrate W (hereinafter referred to as a pre-treatment substrate) carried into the film formation chamber 11 and a substrate W (hereinafter referred to as a post-treatment substrate) carried out from the film formation chamber 11. It is.
  • pre-treatment substrate means a substrate before film formation processing (substrate before film formation treatment), and “post-treatment substrate” means after film formation processing has been performed. This means a substrate (substrate after film formation).
  • the unprocessed substrate W is attached to the carrier 21 (see FIG. 8), or the processed substrate W is removed from the carrier 21.
  • the substrate removal robot 17 attaches or removes the substrate W to / from the carrier 21.
  • the substrate storage cassette 19 is used when transporting the substrate W to a different processing chamber different from the film forming apparatus 10 and stores a plurality of substrates W.
  • the substrate film forming lines 16 each including a film forming chamber 11, a loading / unloading chamber 13, and a substrate desorbing chamber 15 are provided.
  • the substrate removal robot 17 can move on the rail 18 arranged (laid) on the floor surface, and the substrate removal robot 17 performs the process of transferring the substrate W to all the substrate deposition lines 16.
  • the substrate film forming module 14 is configured by integrating the film forming chamber 11 and the loading / unloading chamber 13 and has a size that can be loaded on a transport truck.
  • FIG. 2 is a perspective view seen from a certain position
  • FIG. 3 is a perspective view seen from a position different from the position seen in FIG.
  • FIG. 4 is a side view of the film forming chamber 11.
  • the film forming chamber 11 is formed in a box shape.
  • a carrier through which the carrier 21 on which the substrate W is mounted passes through the first side surface 23 of the film formation chamber 11 connected to the preparation / removal chamber 13 (the side surface of the film formation chamber 11 shown in front of the paper surface in FIG. 2).
  • Three carry-in / out entrances 24 are formed.
  • the carrier carry-in / out port 24 is provided with a shutter 25 that opens and closes the carrier carry-in / out port 24. When the shutter 25 is closed, the carrier carry-in / out port 24 is closed so as to ensure the airtightness of the film forming chamber 11. Further, an exhaust pipe 29 used for decompressing the film forming chamber 11 so as to be in a vacuum atmosphere is connected to the lower side of the side surface of the film forming chamber 11. A vacuum pump 30 is provided in the exhaust pipe 29. (See FIG. 4).
  • Electrodes 31 to be used are attached. These electrode units 31 are detachable from the film forming chamber 11 along a direction substantially perpendicular to the second side surface 27.
  • three attachment / detachment rails 41 on which the electrode unit 31 is suspended are provided substantially in parallel with each other. Each attachment / detachment rail 41 is positioned above the electrode unit 31 and extends along the attachment / detachment direction of the electrode unit 31.
  • the detachable rail 41 for example, I-shaped steel is used.
  • the length L1 of the detachable rail 41 is set to a length that allows the electrode unit 31 to be completely pulled out from the film forming chamber 11. That is, the length L1 is determined according to the distance that the electrode unit 11 moves so that the electrode unit 31 is exposed to the outside of the film forming chamber 11.
  • a hanging portion 43 is slidably provided on the detachable rail 41, and the upper end of the electrode unit 31 is attached to the hanging portion 43.
  • a cable bear 44 is disposed (laid) on each detachable rail 41.
  • a cable K is stored in the cable bear 44.
  • the cable K has a first end and a second end located opposite to the first end. The first end of the cable K is connected to the electrode unit 31.
  • a rail support member 42 is erected at the tip of the detachable rail 41.
  • the rail support member 42 includes a crossing portion 42A and support portions 42B and 42B.
  • the crossover portion 42A extends in a direction in which the attachment / detachment rails 41 are arranged in parallel and in a substantially horizontal direction.
  • the support portions 42B and 42B support both ends of the crossover portion 42A.
  • As the material and structure of the crossover part 42A for example, I-shaped steel is used.
  • a square pipe square pipe steel
  • the distance W1 between the two support portions 42B and 42B is set to a length that allows the three electrode units 31 to pass between the two support portions 42B and 42B.
  • the size of the I-shaped steel used as the detachable rail 41 or the crossing portion 42A for example, when the weight of the electrode unit 31 is about 1.5 t, the size is 200 ⁇ 150 (height H ⁇ width B). I-shaped steel is used.
  • FIG. 5 is a perspective view seen from a certain position
  • FIG. 6 is a perspective view seen from a position different from the position seen in FIG. It is.
  • FIG. 7 is a partial cross-sectional view of the cathode unit 68 and the anode 67 (counter electrode).
  • the electrode unit 31 can be attached to and detached from three openings 26 formed in the second side surface 27 of the film forming chamber 11 (see FIG. 3).
  • the electrode unit 31 includes a carriage 60 and is movable on the floor surface.
  • the carriage 60 includes a bottom plate portion 62 and wheels 61 attached to the four corners of the bottom plate portion 62.
  • the bottom plate portion 62 is opposite to the front portion 62a (position near the cathode unit 68, right side in FIG. 6) adjacent to the film forming chamber 11 in the direction in which the electrode unit 31 is pulled out from the film forming chamber 11.
  • the rear part 62b is located (left side in FIG. 6), and the center part 62c is located between the front part 62a and the rear part 62b.
  • a support portion 46 is erected on the rear portion 62 b of the bottom plate portion 62.
  • the support part 46 is formed in a bowl shape by a square pipe.
  • the support unit 46 includes a suspension unit 461 and a storage unit 462.
  • the storage portion 462 is provided at the end of the bottom plate portion 62 in the rear portion 62b.
  • the height from the surface of the carriage 60 to the upper portion of the storage portion 462 is lower than the height from the surface of the carriage 60 to the upper portion of the suspension portion 461.
  • a connecting portion 47 that can be connected to the hanging portion 43 of the detachable rail 41 is provided on the upper portion 461A of the suspension portion 461.
  • a guide plate 48 for guiding the cable K is provided on the suspension portion 461 so as to extend along the direction of gravity.
  • the guide plate 48 is located above the rear part 62b.
  • One end of a cable bear 44 is attached to the tip of the guide plate 48.
  • the first end of the cable K is connected to the electrode unit 31.
  • the second end of the cable K is arranged (routed) in the cable bear 44 while being guided by the guide plate 48.
  • a side plate portion 63 that rises from the bottom plate portion 62 along the vertical direction is provided at the center portion 62 c of the bottom plate portion 62. That is, the side plate portion 63 is provided at a position closer to the film forming chamber 11 than the suspension portion 462.
  • the side plate portion 63 is formed in a size larger than the opening portion 26 so as to close the opening portion 26 of the second side surface 27 of the film forming chamber 11. That is, the side plate portion 63 constitutes a part of the wall surface of the film forming chamber 11.
  • On one surface 65 (the surface facing the inside of the film forming chamber 11) of the side plate portion 63 an anode used when forming a film on the substrate W and disposed so as to face each of both surfaces of the substrate W. 67 and a cathode unit 68 are provided.
  • the anode 67 is arranged so as to be spaced from both sides of the cathode unit 68 so as to sandwich the cathode unit 68, and a film formation space 81 is formed between each cathode unit 68 and the anode 67. Is formed.
  • the storage portion 462 constituting the support portion 46 includes a drive mechanism 71 used to drive the anode 67 and a matching box 72 (used to supply power to the cathode unit 68 when a film is formed on the substrate W. The details will be described later). Further, the side plate portion 63 is formed with a connection portion (not shown) used as a pipe for supplying a film forming gas to the cathode unit 68.
  • a matching box 72 (indicated by a two-dot chain line in FIG. 3) is provided on the support portion 42B of the rail support member 42 erected at the tip of the detachable rail 41, and the matching box 72 includes three electrodes.
  • a configuration commonly used in the unit 31 may be adopted. In the film forming apparatus having such a configuration, it is not necessary to provide the matching box 72 in each electrode unit 31, and the number of matching boxes 72 installed in the film forming apparatus 10 can be reduced.
  • a heater H is incorporated in the anode 67 as a temperature control device that adjusts the temperature of the substrate W.
  • the two anodes 67 and 67 are driven by a drive mechanism 71 provided on the side plate portion 63 in a direction in which the anode 67 approaches the cathode unit 68 and a direction in which the anode 67 moves away from the cathode unit 68, that is, in the horizontal direction. It is movable.
  • the drive mechanism 71 controls the distance between the substrate W and the cathode unit 68.
  • the two anodes 67 and 67 move toward the cathode unit 68 (see the arrow in FIG. 7) and come into contact with the substrate W. Further, the two anodes 67 and 67 move so as to approach the cathode unit 68, and the distance between the substrate W and the cathode unit 68 is adjusted to a desired distance. Thereafter, a film forming process for forming a film on the substrate W is performed. After the film forming process is completed, the anodes 67 and 67 move away from the cathode unit 68.
  • the drive mechanism 71 controls the positions of the anodes 67 and 67, whereby the substrate W can be easily taken out from the electrode unit 31.
  • the anode 67 is attached to the drive mechanism 71 via a hinge (not shown) or the like, and a surface 67A facing the cathode unit 68 of the anode 67 is formed in a state where the electrode unit 31 is pulled out from the film forming chamber 11. It can be rotated (opened) until it becomes substantially parallel to one surface 65 of the side plate portion 63. That is, the anode 67 is configured to be able to turn approximately 90 ° when viewed from the vertical direction of the bottom plate portion 62 (see FIG. 5).
  • the cathode unit 68 includes a shower plate 75 (cathode), a cathode intermediate member 76 that is in contact with the outer periphery of the shower plate 75, an exhaust duct 79, and a floating capacity body 82.
  • shower plates 75 are arranged on the surface facing the anode 67 and on both sides of the cathode unit 68.
  • Each shower plate 75, 75 has a plurality of small holes (not shown), and a film forming gas is ejected from the small holes 74 toward the substrate W.
  • the cathode intermediate member 76 is electrically connected to the matching box 72 through a wiring (not shown).
  • the matching box 72 has a function of performing matching (impedance matching) between the cathode intermediate member 76 and the high frequency power source, and is connected to a high frequency power source (not shown) via a cable K housed in the cable bear 44. . That is, the cathode intermediate member 76 is connected to a high frequency power source via a wiring (not shown), the matching box 72, and the cable K.
  • the cathode intermediate member 76 and the shower plate 75 are made of a conductor, and each shower plate 75, 75 is electrically connected to the matching box 72 via the cathode intermediate member 76. That is, each shower plate 75, 75 functions as a cathode (high frequency electrode). In order to generate plasma between the shower plate 75 and the anode 67, voltages having the same potential and the same phase are applied to the shower plates 75 and 75, respectively.
  • Space portions 77 and 77 are formed between the cathode intermediate member 76 and the shower plates 75 and 75, and a film forming gas is introduced into the space portions 77 and 77 from a gas supply device (not shown).
  • the spaces 77 and 77 are separated by the cathode intermediate member 76 and are formed separately corresponding to the shower plates 75 and 75.
  • the gas discharged from each shower plate 75, 75 is controlled independently. That is, the spaces 77 and 77 function as a gas supply path.
  • the cathode unit 68 since each of the space portions 77 and 77 is formed corresponding to each shower plate 75 and 75, the cathode unit 68 has two systems of gas supply paths.
  • a hollow exhaust duct 79 is provided at the peripheral edge of the cathode unit 68 at substantially the entire circumference of the cathode unit 68.
  • the exhaust duct 79 is formed with an exhaust port 80 used for exhausting a film forming gas or a reaction byproduct (powder) existing in the film forming space 81.
  • the exhaust port 80 is formed so as to communicate with (be face) the film formation space 81 formed between the substrate W and the shower plate 75 when performing the film formation process.
  • a plurality of the exhaust ports 80 are formed along the peripheral edge of the cathode unit 68, and are configured so that the film forming gas or the reaction product (powder) can be sucked and removed almost uniformly on the entire circumference of the cathode unit 68. Yes.
  • an opening (not shown) is formed on the surface of the exhaust duct 79 located below the cathode unit 68 and facing the film forming chamber 11.
  • the film forming gas removed through the exhaust port 80 is discharged into the film forming chamber 11 through this opening.
  • the gas discharged into the film formation chamber 11 is exhausted to the outside of the film formation chamber 11 through an exhaust pipe 29 provided at the lower side of the film formation chamber 11.
  • a dielectric and a floating capacitor 82 is provided between the exhaust duct 79 and the cathode intermediate member 76, that is, on the outer peripheral surface of the flange portion formed on the cathode intermediate member 76.
  • the stray capacitance body 82 has a stacked space.
  • the exhaust duct 79 is connected to the ground potential.
  • the exhaust duct 79 also functions as a shield frame used to prevent abnormal discharge that occurs in the shower plate 75 and the cathode intermediate member 76.
  • a mask 78 is provided on the peripheral edge of the cathode unit 68 so as to cover a portion (region) extending from the outer periphery of the exhaust duct 79 to the outer periphery of the cathode intermediate member 76.
  • the mask 78 covers a clamping piece 59A (see FIG. 8) of the clamping part 59, which will be described later, provided on the carrier 21, and is present in the space 77 integrally with the clamping piece 59A when the film forming process is performed.
  • a gas flow path R that guides the film forming gas or the reaction product (powder) to the exhaust duct 79 is formed.
  • the gas flow path R is formed between the mask 78 and the shower plate 75 covering the carrier 21 (the sandwiching piece 59A) and between the mask 78 and the exhaust duct 79.
  • the film forming gas or the reaction product (powder) may be exhausted from the space 77 toward the outer periphery of the substrate W without providing the exhaust duct 79, the mask 78, and the gas flow path R.
  • a moving rail 37 is formed so that the carrier 21 can move between the film forming chamber 11 and the loading / unloading chamber 13 and between the loading / unloading chamber 13 and the substrate desorption chamber 15. It is laid between the film chamber 11 and the substrate desorption chamber 15.
  • the preparation / removal chamber 13 is formed in a box shape.
  • a carrier carry-in / out port (not shown) through which the carrier 21 on which the substrate W is mounted is provided on one side surface (lower surface in FIG. 1) of the preparation / removal chamber 13.
  • a shutter 36 that can ensure the airtightness of the charging / extraction chamber 13 is provided at the carrier carry-in / out entrance.
  • a vacuum pump (not shown) is connected to the preparation / removal chamber 13, and the vacuum pump depressurizes the inside of the preparation / removal chamber 13 so as to be in a vacuum state.
  • the loading / unloading chamber 13 is provided with a push-pull mechanism (not shown) that moves the carrier 21 between the film forming chamber 11 and the loading / unloading chamber 13 along the moving rail 37.
  • a moving mechanism (not shown) is provided in the preparation / removal chamber 13 in order to accommodate the pre-treatment substrate and the post-treatment substrate simultaneously (collectively). This moving mechanism moves the carrier 21 by a predetermined distance in a direction substantially orthogonal to the direction in which the moving rail 37 is laid in a plan view viewed from the vertical direction of the floor surface on which the film forming apparatus 10 is installed.
  • the pre-treatment substrate can be attached to the carrier 21 arranged on the moving rail 37, and the post-treatment substrate can be detached from the carrier 21.
  • the substrate desorption chamber 15 three carriers 21 can be arranged in parallel.
  • the substrate removal robot 17 has a drive arm 45, and has a suction unit that sucks the substrate W at the tip of the drive arm 45.
  • the drive arm 45 drives between the carrier 21 disposed in the substrate removal chamber 15 and the substrate storage cassette 19. Specifically, the drive arm 45 can take out the pre-treatment substrate from the substrate accommodation cassette 19 and attach the pre-treatment substrate to the carrier 21 disposed in the substrate removal chamber 15. Further, the drive arm 45 can remove the processed substrate from the carrier 21 that has returned to the substrate removal chamber 15 and transport the substrate to the substrate storage cassette 19.
  • FIG. 8 is a perspective view showing the carrier 21.
  • the carrier 21 is used for transporting the substrate W, and two frame-shaped frames 51 to which the substrate W can be attached are formed. That is, two substrates W can be attached to one carrier 21.
  • the two frames 51 and 51 are integrated by a connecting member 52 at an upper portion thereof. Further, above the connecting member 52, a wheel 53 placed on the moving rail 37 is provided. When the wheel 53 rolls on the moving rail 37, the carrier 21 can move along the moving rail 37.
  • a frame holder 54 is provided below the frame 51 in order to suppress the shaking of the substrate W when the carrier 21 moves.
  • the front end of the frame holder 54 is fitted to a rail member (not shown) provided on the bottom surface of each chamber and having a concave cross-sectional shape.
  • a rail member (not shown) is arranged in a direction along the moving rail 37. If the frame holder 54 is composed of a plurality of rollers, the substrate W can be transported more stably.
  • Each of the frames 51 has an opening 56, a peripheral edge 57, and a clamping part 59.
  • the sandwiching portion 59 includes a sandwiching piece 59A that abuts on the front surface of the substrate W and a sandwiching piece 59B that abuts on the back surface (back surface) of the substrate W.
  • the clamping pieces 59A and 59B are connected via a spring or the like. By this spring, a biasing force acts in a direction in which the sandwiching piece 59A and the sandwiching piece 59B are close to each other.
  • the clamping piece 59A is movable in accordance with the movement of the anode 67 in the direction in which the clamping piece 59A approaches the clamping piece 59B or in the direction in which the clamping piece 59A moves away from the clamping piece 59B.
  • one carrier 21 is attached on one moving rail 37. That is, one carrier 21 that can hold a pair (two) of substrates W on one moving rail 37 is attached. Accordingly, in one set of film forming apparatus 10, three carriers 21 are attached, that is, three pairs (six substrates) are held.
  • a method for forming a film on the substrate W using the film forming apparatus 10 will be described.
  • the drawing of one substrate film forming line 16 is used, but a film is also formed on the substrate in the other three substrate film forming lines 16 by substantially the same method.
  • a substrate storage cassette 19 that stores a plurality of pre-processed substrates (substrates W) is disposed at a predetermined position.
  • the drive arm 45 of the substrate removal robot 17 is moved to take out one unprocessed substrate from the substrate storage cassette 19, and this unprocessed substrate is placed on the carrier 21 (see FIG. 8) installed in the substrate removal chamber 15. Install.
  • the arrangement direction of the unprocessed substrates arranged in the horizontal direction in the substrate accommodation cassette 19 changes to the vertical direction, and the unprocessed substrates are attached to the carrier 21.
  • This operation is repeated once, and two pre-treatment substrates are attached to one carrier 21. Further, this operation is repeated to attach the pre-treatment substrates to the remaining two carriers 21 installed in the substrate removal chamber 15. That is, at this stage, six pre-treatment substrates are attached to the three carriers 21.
  • the three carriers 21 to which the unprocessed substrates are attached move substantially simultaneously along the moving rail 37 and are accommodated in the preparation / removal chamber 13.
  • the shutter 36 at the carrier loading / unloading port (not shown) of the preparation / removal chamber 13 is closed.
  • the inside of the preparation / removal chamber 13 is kept in a vacuum state using a vacuum pump (not shown).
  • each of the three carriers 21 is moved in a direction orthogonal to the direction in which the moving rail 37 is laid using a moving mechanism. Move a predetermined distance.
  • the shutter 25 of the film forming chamber 11 is opened, and the carrier 21 to which the post-processing substrate after the film forming process is completed in the film forming chamber 11 is loaded using a push-pull mechanism (not shown). Move to. Further, the carrier 21 holding the unprocessed substrate is moved to the film forming chamber 11 using a push-pull mechanism. After the movement of the carrier 21 is completed, the shutter 25 is closed. Note that the inside of the film forming chamber 11 is kept in a vacuum state. At this time, the substrate before processing attached to the carrier 21 moves along a direction parallel to the surface of the substrate before processing. In the film forming chamber 11, the pre-treatment substrate is inserted along the vertical direction between the anode 67 and the cathode unit 68 so that the surface of the pre-treatment substrate is substantially parallel to the direction of gravity.
  • the drive mechanism 71 moves the two anodes 67 of the electrode unit 31 in the direction in which the anode 67 approaches the cathode unit 68 (see the arrow in FIG. 7), so that the anode 67 and the back surface of the substrate W come into contact with each other.
  • the pre-treatment substrate moves toward the cathode unit 68 so as to be pushed by the anode 67.
  • the pre-treatment substrate moves toward the cathode unit 68 until the gap between the substrate W and the shower plate 75 of the cathode unit 68 reaches a predetermined distance (film formation distance).
  • the gap (film formation distance) between the substrate W and the shower plate 75 of the cathode unit 68 is 5 to 15 mm, for example, about 5 mm.
  • the sandwiching piece 59A of the carrier 21 in contact with the surface of the substrate W is displaced so as to be separated from the sandwiching piece 59B as the substrate W moves (the anode 67 moves).
  • the substrate W is sandwiched between the anode 67 and the sandwiching piece 59A.
  • the clamping piece 59A comes into contact with the mask 78, and at this point, the movement of the anode 67 stops.
  • a film forming gas is ejected from the shower plate 75 of the cathode unit 68 toward the substrate W, and the matching box 72 is activated to apply a voltage to the cathode intermediate member 76 (shower plate 75) of the cathode unit 68. Applied.
  • plasma of a film forming gas is generated in the film forming space 81, and a film is formed on the surface of the substrate W.
  • the substrate before processing is heated to a desired temperature by the heater H built in the anode 67.
  • the gas or the reaction product (powder) in the film forming space 81 is exhausted through the exhaust port 80 formed in the peripheral portion of the cathode unit 68.
  • the gas or reaction product in the film formation space 81 is exhausted to the exhaust duct 79 at the peripheral edge of the cathode unit 68 via the gas flow path R and the exhaust port 80.
  • the gas or reaction product passes through the opening of the exhaust duct 79 facing the inside of the film forming chamber 11 in the lower part of the cathode unit 68.
  • the gas or the reaction product is exhausted to the outside of the film forming chamber 11 from an exhaust pipe 29 provided at the lower side of the film forming chamber 11.
  • the reaction product (powder) generated when forming a film on the substrate W adheres to and accumulates on the inner wall surface of the exhaust duct 79 and is collected and disposed of. Since all the electrode units 31 in the film forming chamber 11 perform the same process as described above, films can be formed simultaneously on six substrates.
  • the anode 67 is moved in the direction in which the two anodes 67 are separated from each other by the drive mechanism 71, and the processed substrate and the frame 51 (the sandwiching piece 59A) are returned to their original positions. Further, by moving the anode 67 in a direction in which the two anodes 67 are separated from each other, the substrate after processing is separated from the anode 67.
  • the shutter 25 of the film formation chamber 11 is opened, and the carrier 21 is moved to the preparation / removal chamber 13 using a push-pull mechanism (not shown).
  • the inside of the preparation / removal chamber 13 is depressurized, and the carrier 21 to which the pre-treatment substrate on which a film is to be formed next is attached is already located in the preparation / removal chamber 13. Then, in the preparation / removal chamber 13, the heat stored in the processed substrate is transferred to the unprocessed substrate, and the temperature of the processed substrate is lowered.
  • the carrier 21 on which the substrate before processing is moved moves into the film forming chamber 11
  • the carrier 21 on which the substrate after processing is mounted is returned to the position of the moving rail 37 by the moving mechanism.
  • the shutter 25 is closed, the shutter 36 is opened, and the carrier 21 on which the processed substrate is mounted is moved to the substrate removal chamber 15.
  • the substrate removal robot 17 removes the processed substrate from the carrier 21 and transports the processed substrate to the substrate storage cassette 19.
  • the substrate storage cassette 19 on which the processed substrates are mounted is moved to a place (apparatus) where the next process is performed, and the film forming process in the film forming apparatus 10 is performed. Ends.
  • Electrode unit maintenance work Next, a procedure for maintenance work of the electrode unit 31 in the film forming apparatus 10 will be described with reference to FIGS. In this description, the procedure of maintenance work for one electrode unit 31 among the three electrode units 31 attached to one film forming chamber 11 will be described, and the maintenance work for other electrode units 31 will be described. Is omitted. Maintenance work of the other electrode unit 31 is performed according to the procedure described below.
  • the length L1 of the detachable rail 41 is set to a length that allows the electrode unit 31 to be completely pulled out from the film forming chamber 11, so that the cathode unit 68 or the anode 67 is exposed to the outside of the film forming chamber 11. To do. Therefore, the anode 67 can be opened by about 90 ° with respect to the cathode unit 68 (see FIG. 5).
  • the single electrode unit 31 separated from the film forming chamber 11 is left in the state exposed to the outside air until the temperature of the electrode unit 31 reaches a temperature at which maintenance work can be performed. When the electrode unit 31 is lowered to a desired temperature, the anode 67 is opened, and the surface of the anode 67 and the surface of the cathode unit 68 facing each other are exposed.
  • a film forming space 81 is formed by the mask 78, the shower plate 75 of the cathode unit 68, and the substrate W. That is, a film is formed on the surface of the cathode unit 68 facing the anode 67 (shower plate 75) or the surface 67A of the anode 67 facing the cathode unit 68 (see FIG. 7), or reaction by-products (powder) are adhered. There are many cases. Further, also in the mask 78 and the gas flow path R, a film or a reaction byproduct (powder) adheres.
  • the exhaust duct 79 installed in the electrode unit 31 can also be pulled out from the film forming chamber 11 at the same time as the maintenance work. For this reason, the reaction by-product (powder) adhering / depositing on the exhaust duct 79 can also be easily maintained (cleaned).
  • this electrode unit 31 is mounted again in the opening 26 of the film forming chamber 11. Then, another electrode unit 31 is pulled out from the film forming chamber 11, and the maintenance work is performed as described above.
  • the electrode unit 31 having the cathode unit 68 and the anode 67 can be easily separated from the film forming chamber 11. For this reason, it is possible to perform maintenance work with the electrode unit 31 alone, and to secure a large work space. Therefore, it is possible to reduce the work load generated in the maintenance work.
  • a detachable rail 41 is provided on the upper surface 22 of the film forming chamber 11, and the electrode unit 31 is suspended from the detachable rail 41 via a hanging portion 43 and a connecting portion 47.
  • the electrode unit 31 is guided by the detachable rail 41, and the electrode unit 31 can be easily pulled out from the film forming chamber 11. . Therefore, it is possible to reduce the work load generated in the maintenance work.
  • the electrode unit 31 can be easily mounted again only by moving the electrode unit 31 drawn out from the film forming chamber 11 along the attachment / detachment rail 41. Therefore, the reproducibility that the position of the electrode unit 31 before the electrode unit 31 is pulled out from the film forming chamber 11 and the position where the electrode unit 31 is mounted in the film forming chamber 11 after the electrode unit 31 is pulled out is improved. In addition, the positioning operation of the electrode unit 31 can be performed with high accuracy.
  • the bottom plate portion 62 of the electrode unit 31 is provided with a side plate portion 63 that rises in the vertical direction, and this side plate portion 63 constitutes a part of the wall surface of the film forming chamber 11. For this reason, a part of the electrode unit 31 can also serve as a part of the film forming chamber 11, so that the structure of the film forming apparatus can be prevented from becoming complicated and the number of parts can be reduced.
  • a cable bearer 44 is disposed on each of the attachment / detachment rails 41, and a cable K is accommodated in the cable bearer 44. In addition, one end of a cable K is connected to the electrode unit 31. For this reason, the operation of removing the electrode unit 31 from the film forming chamber 11 and the operation of attaching the electrode unit 31 to the film forming chamber 11 can be performed with the cable K connected to the electrode unit 31 (detachment operation). For this reason, it becomes possible to further reduce the work load generated in the maintenance work.
  • the cable bearer 44 is laid on each of the attachment / detachment rails 41, when a flexible pipe is adopted as a pipe for supplying the film forming gas to the cathode unit 68, the flexible pipe is arranged along the guide plate 48.
  • the flexible piping can be stored in the cable bear 44. For this reason, the work load which arises in a maintenance work can be further reduced.
  • a matching box 72 (indicated by a two-dot chain line in FIG. 3) is provided on the support portion 42B of the rail support member 42 erected at the tip of the detachable rail 41, and the matching box 72 is provided with three electrodes.
  • a configuration commonly used in the unit 31 may be adopted. For this reason, the number of parts can be reduced, and the manufacturing cost of the film forming apparatus 10 can be reduced.
  • the length L1 of the detachable rail 41 is set to a length that allows the electrode unit 31 to be completely pulled out from the film forming chamber 11, that is, the length L1 is the length of the electrode unit 31 in the film forming chamber. 11 is determined according to the distance that the electrode unit 11 moves so as to be exposed to the outside. For this reason, the cathode unit 68 or the anode 67 can be completely exposed to the outside of the film forming chamber 11. Thus, a work space for maintaining the single electrode unit 31 can be ensured.
  • the electrode unit 31 is provided with a carriage 60, and the electrode unit 31 can move on the floor surface. And when attaching / detaching the electrode unit 31 from the film forming chamber 11, the electrode unit 31 can be attached / detached along the attaching / detaching rail 41 while using the hanging portion 43 of the attaching / detaching rail 41 and the carriage 60 together. For this reason, it is possible to prevent the attachment / detachment rail 41 from being damaged due to an increase in the weight of the electrode unit. Moreover, it is not necessary to increase the rigidity of the detachable rail 41 more than necessary, and the detachable rail can be prevented from being enlarged.
  • the technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
  • this invention does not limit this material or structure.
  • the detachable rail 41 a structure in which the electrode unit 31 can be suspended is employed.
  • the rail support member 42 that supports the tip of the mounting / dismounting rail 41 is configured by the crossover portion 42A and the support portions 42B and 42B that support both ends of the crossover portion 42A will be described. did.
  • the present invention is not limited to this structure, and other structures may be adopted as long as the structure can support the detachable rail 41.
  • the present invention can be applied to a film forming apparatus used for manufacturing a thin film solar cell.

Abstract

Disclosed is a film-forming apparatus (10) which includes: a film-forming chamber (11), which has an upper part (22) in the gravitational direction, and has a substrate (W) disposed therein such that the substrate (W) surface, on which a film is to be formed, is parallel to the gravitational direction; an electrode unit (31), which has a flat-board-like cathode (75) having a voltage applied thereto, and an anode (67) disposed to face the cathode (75) by being spaced apart from the cathode, and which is removably provided in the film-forming chamber (11); and an attaching/detaching rail (41), which is provided on the upper part of the film-forming chamber (11), in the direction wherein the electrode unit (31) is drawn from the film-forming chamber (11), and which guides the electrode unit (31).

Description

成膜装置Deposition equipment
 本発明は、例えば、薄膜太陽電池の製造に用いられる成膜装置に関する。
 本願は、2009年7月31日に出願された特願2009-179413号に基づき優先権を主張し、その内容をここに援用する。
The present invention relates to a film forming apparatus used for manufacturing a thin film solar cell, for example.
This application claims priority based on Japanese Patent Application No. 2009-179413 filed on Jul. 31, 2009, the contents of which are incorporated herein by reference.
 現在の太陽電池に用いられている材料においては、単結晶Si型及び多結晶Si型の材料により大半が占められており、Siの材料不足等が懸念されている。
 そこで、近年では、製造コストが低く、材料不足のリスクが小さい薄膜Si層が形成された薄膜太陽電池の需要が高まっている。
 更に、従来型のa-Si(アモルファスシリコン)層のみを有する薄膜太陽電池に加えて、最近ではa-Si層とμc-Si(マイクロクリスタルシリコン)層を積層することにより変換効率の向上を図るタンデム型薄膜太陽電池の需要が高まっている。
 この薄膜太陽電池の薄膜Si層(半導体層)を形成する装置としては、プラズマCVD装置が用いられることが多い。
 プラズマCVD装置としては、枚葉式PE-CVD(プラズマCVD)装置、インライン型PE-CVD装置、バッチ式PE-CVD装置等が知られている。
Most of the materials used in current solar cells are occupied by single-crystal Si-type and polycrystalline Si-type materials, and there is concern about the shortage of Si materials.
Therefore, in recent years, there is an increasing demand for thin-film solar cells in which a thin-film Si layer having a low manufacturing cost and a low risk of material shortage is formed.
Furthermore, in addition to the conventional thin film solar cell having only an a-Si (amorphous silicon) layer, recently, the conversion efficiency is improved by laminating an a-Si layer and a μc-Si (microcrystal silicon) layer. There is an increasing demand for tandem thin film solar cells.
As an apparatus for forming a thin film Si layer (semiconductor layer) of this thin film solar cell, a plasma CVD apparatus is often used.
As a plasma CVD apparatus, a single-wafer PE-CVD (plasma CVD) apparatus, an inline PE-CVD apparatus, a batch PE-CVD apparatus, and the like are known.
 薄膜太陽電池に要求される変換効率を考慮すると、上記タンデム型太陽電池のμc-Si層に要求される膜厚として、アモルファスSi層の膜厚の約5倍程度の膜厚(1.5μm程度)を確保する必要がある。また、μc-Si層の成膜工程においては、良質なマイクロクリスタル膜を均一に形成する必要があり、成膜速度を大きくするには限界がある。このため、バッチ数を増加させたりすることにより、生産性を向上させることが求められている。即ち、低成膜速度で、かつ、高スループットを実現する装置が求められている。 Considering the conversion efficiency required for thin-film solar cells, the film thickness required for the μc-Si layer of the tandem solar cell is approximately 5 times the film thickness of the amorphous Si layer (approximately 1.5 μm). ) Must be secured. Further, in the process of forming the μc-Si layer, it is necessary to form a high-quality microcrystal film uniformly, and there is a limit to increasing the film formation rate. For this reason, it is required to improve productivity by increasing the number of batches. That is, there is a demand for an apparatus that realizes a high deposition rate at a low film formation rate.
 また、高品質の薄膜を形成でき、かつ、製造コスト又はメンテナンスコストを低くすることを目的としたCVD装置が提案されている(例えば、特許文献1参照)。特許文献1のCVD装置は、基体(基板)受渡・払出し装置と、複数の基体を収納可能な成膜チャンバ群と、移動用チャンバと、チャンバ移動装置とで構成されている。成膜チャンバの出入口(成膜室の出入口)には気密性を有するシャッタが設けられている。移動用チャンバの出入口(収納室出入口)は常時開放されている。 Also, a CVD apparatus has been proposed that can form a high-quality thin film and that is intended to reduce manufacturing costs or maintenance costs (see, for example, Patent Document 1). The CVD apparatus of Patent Document 1 includes a substrate (substrate) delivery / dispensing device, a film forming chamber group that can store a plurality of substrates, a moving chamber, and a chamber moving device. An airtight shutter is provided at the entrance / exit of the film forming chamber (the entrance / exit of the film forming chamber). The entrance / exit of the transfer chamber (storage chamber entrance / exit) is always open.
 そして、基体上に膜を形成する際には、チャンバ移動装置によって基体受渡・払出し装置の位置に移動用チャンバが移動し、基体キャリアを基体受渡・払出し装置から移動用チャンバに向けて移送する。また、チャンバ移動装置は、移動用チャンバを成膜チャンバに接合し、基体キャリアを成膜チャンバに移動させる。成膜チャンバにおいては、基体上に膜が形成される。成膜チャンバには、基体を加熱するために用いられる複数のヒータと、成膜チャンバに供給される成膜ガスのプラズマを発生させるために用いられる複数の電極とが設けられている。複数のヒータ及び複数の電極は、それぞれ互い違いに並行に配置されており、ヒータと電極との間に基体が配置される。 When the film is formed on the substrate, the chamber is moved to the position of the substrate delivery / dispensing device by the chamber moving device, and the substrate carrier is transferred from the substrate delivery / dispensing device to the movement chamber. Further, the chamber moving device joins the moving chamber to the film forming chamber and moves the substrate carrier to the film forming chamber. In the film forming chamber, a film is formed on the substrate. The film forming chamber is provided with a plurality of heaters used for heating the substrate and a plurality of electrodes used for generating plasma of a film forming gas supplied to the film forming chamber. The plurality of heaters and the plurality of electrodes are alternately arranged in parallel, and the base is disposed between the heater and the electrodes.
特開2005-139524号公報JP 2005-139524 A
 ところで、上述のCVD装置では、成膜チャンバ内の温度上昇に伴って、基体上に膜を形成する際に、ヒータ又は電極にも膜が形成されてしまう場合がある。これらヒータ又は電極に膜が形成されてしまうと、基体に適正な膜が形成されなかったり、生産効率が低下したりする。このため、CVD装置の使用頻度に応じて、ヒータ又は電極を交換する等の定期的なメンテナンス作業が必要になる。 By the way, in the above-described CVD apparatus, when the film is formed on the substrate, the film may be formed on the heater or the electrode as the temperature in the film forming chamber increases. If a film is formed on these heaters or electrodes, an appropriate film may not be formed on the substrate, or the production efficiency may be reduced. For this reason, periodic maintenance work such as replacement of a heater or an electrode is required according to the frequency of use of the CVD apparatus.
 このようなメンテナンス作業を行う場合、成膜チャンバ内にヒータと電極とが互い違いに並行に配置されているので、メンテナンスを行うための作業スペースが限られてしまい、メンテナンス作業が行い難い。このため、メンテナンス作業に生じる作業負担が大きくなってしまうという課題がある。 When performing such maintenance work, the heaters and the electrodes are alternately arranged in parallel in the film forming chamber, so that the work space for maintenance is limited and the maintenance work is difficult to perform. For this reason, there exists a subject that the work burden which arises in a maintenance work will become large.
 本発明は、上記の課題を解決するためになされたものであって、メンテナンス作業に生じる作業負担を軽減できる成膜装置を提供する。 The present invention has been made in order to solve the above-described problems, and provides a film forming apparatus capable of reducing the work load generated in the maintenance work.
 上記の課題を解決するために、本発明の一態様の成膜装置は、重力方向において上部を有し、基板の被成膜面が重力方向と並行となるように前記基板が配置される成膜室と、電圧が印加される平板状のカソードと、前記カソードに離間して対向配置されたアノードとを有し、前記成膜室に着脱可能(着脱自在)に設けられた電極ユニットと、前記成膜室の前記上部に設けられ、前記成膜室から前記電極ユニットが引き出される方向に沿って設けられ、前記電極ユニットをガイドする着脱用レールとを含む。 In order to solve the above problems, a film formation apparatus of one embodiment of the present invention includes an upper portion in the direction of gravity, and the substrate is disposed so that a film formation surface of the substrate is parallel to the direction of gravity. An electrode unit having a film chamber, a flat cathode to which a voltage is applied, and an anode spaced apart from the cathode and arranged detachably (detachably) in the film formation chamber; And a detachable rail provided along the direction in which the electrode unit is pulled out from the film forming chamber and guiding the electrode unit.
 このような構成を有する成膜装置においては、カソード及びアノードを有する電極ユニットを成膜室から分離させ、単体の電極ユニットにおいてメンテナンス作業を行うことができる。このため、作業スペースを大きく確保することが可能になる。また、重力方向において成膜室の上部に設けられた着脱用レールによって、電極ユニットはガイドされ、電極ユニットは着脱用レールの延在方向に沿って移動する。また、電極ユニットは、着脱用レールに懸架されている。この構造においては、例えば、成膜装置が設置されている床面に凹凸がある場合であっても成膜室から電極ユニットを容易に引き出すことができる。従って、メンテナンス作業に生じる作業負担を軽減することが可能になる。更に、成膜室から引き出された電極ユニットを着脱用レールに沿って成膜装置に向けて移動させるだけで、電極ユニットを成膜装置に容易に再装着することができる。このため、成膜室から電極ユニットが引き出される前における電極ユニットの位置と、電極ユニットを引き出した後に成膜室に電極ユニットが装着される位置が一致する再現性を高めることができ、電極ユニットの位置決め作業を高い精度で行うことができる。 In the film forming apparatus having such a configuration, the electrode unit having the cathode and the anode can be separated from the film forming chamber, and maintenance work can be performed in a single electrode unit. For this reason, a large work space can be secured. Further, the electrode unit is guided by the detachable rail provided in the upper part of the film forming chamber in the direction of gravity, and the electrode unit moves along the extending direction of the detachable rail. Moreover, the electrode unit is suspended by the attachment / detachment rail. In this structure, for example, the electrode unit can be easily pulled out from the film forming chamber even when the floor surface on which the film forming apparatus is installed is uneven. Therefore, it is possible to reduce the work load generated in the maintenance work. Furthermore, the electrode unit can be easily reattached to the film forming apparatus simply by moving the electrode unit drawn out from the film forming chamber toward the film forming apparatus along the attachment / detachment rail. Therefore, the reproducibility that the position of the electrode unit before the electrode unit is pulled out from the film forming chamber and the position where the electrode unit is mounted in the film forming chamber after the electrode unit is pulled out can be improved. Can be performed with high accuracy.
 本発明の一態様の成膜装置においては、前記電極ユニットは、前記成膜室の一つの面を構成し、前記カソード及び前記アノードが前記電極ユニットに取り付けられた状態で前記成膜室から分離可能である側板部を有することが好ましい。
 このような構成を有する成膜装置においては、電極ユニットの一部と成膜室の一部とを兼ねることができ、成膜装置の構造が複雑化することを防止できると共に、部品点数を削減させることが可能になる。
In the film forming apparatus of one embodiment of the present invention, the electrode unit constitutes one surface of the film forming chamber, and is separated from the film forming chamber in a state where the cathode and the anode are attached to the electrode unit. It is preferable to have a side plate part that is possible.
In the film forming apparatus having such a configuration, part of the electrode unit and part of the film forming chamber can be used, so that the structure of the film forming apparatus can be prevented from becoming complicated and the number of parts can be reduced. It becomes possible to make it.
 本発明の一態様の成膜装置は、前記着脱用レール上に配置(敷設)され、前記電極ユニットに接続されるケーブルが配置(配索、cabling)されているケーブルベアを含むことが好ましい。
 このような構成を有する成膜装置においては、電極ユニットにケーブルが接続された状態で成膜室から電極ユニットを取り外す作業と成膜室に電極ユニットを取り付ける作業とを行うことができる(着脱作業)。このため、メンテナンス作業に生じる作業負担をより軽減することが可能になる。
The film forming apparatus of one embodiment of the present invention preferably includes a cable bear disposed (laid) on the detachable rail, and a cable connected to the electrode unit is disposed (routed).
In the film forming apparatus having such a configuration, an operation of removing the electrode unit from the film forming chamber and a work of attaching the electrode unit to the film forming chamber can be performed in a state where the cable is connected to the electrode unit (detaching operation). ). For this reason, it becomes possible to further reduce the work load generated in the maintenance work.
 本発明の一態様の成膜装置においては、前記着脱用レールの長さ(配置長さ、敷設長さ)は、少なくとも前記カソード及び前記アノードの全体を前記成膜室の外部に露出するように前記電極ユニットが移動する距離に応じて決定されていることが好ましい。
 このような構成を有する成膜装置においては、単体の電極ユニットのメンテナンス作業における作業スペースを確実に確保することができる。
In the film forming apparatus of one embodiment of the present invention, the length of the detachable rail (arrangement length, laying length) is set so that at least the entire cathode and the anode are exposed to the outside of the film forming chamber. It is preferable that the distance is determined according to the distance that the electrode unit moves.
In the film forming apparatus having such a configuration, a work space in the maintenance work of the single electrode unit can be reliably ensured.
 本発明の一態様の成膜装置においては、前記電極ユニットは、台車を有することが好ましい。
 このような構成を有する成膜装置においては、着脱用レールにかかる電極ユニットの荷重を台車に分散させることができる。このため、電極ユニットの重量の増加に伴う着脱用レールの損傷を防止することができる。また、着脱用レールの剛性を必要以上に高める必要がなく、着脱用レールの大型化を防止することができる。また、着脱用レールをガイドとして機能させ、主に台車を用いることによって電極ユニットを移動させることが可能となる。更に、台車に、重量が大きいRF電源(高周波電源)を搭載することが可能となり、RF電源と電極ユニットとの距離が短くできるのでRF電源と電極ユニットとを接続するケーブルを短くすることができる。
In the film forming apparatus of one embodiment of the present invention, the electrode unit preferably includes a carriage.
In the film forming apparatus having such a configuration, the load of the electrode unit applied to the attachment / detachment rail can be distributed to the carriage. For this reason, it is possible to prevent damage to the detachable rail accompanying the increase in the weight of the electrode unit. Moreover, it is not necessary to increase the rigidity of the detachable rail more than necessary, and the detachable rail can be prevented from being enlarged. In addition, the electrode unit can be moved by using the detachable rail as a guide and mainly using a carriage. Furthermore, it is possible to mount a heavy RF power source (high frequency power source) on the carriage, and the distance between the RF power source and the electrode unit can be shortened, so that the cable connecting the RF power source and the electrode unit can be shortened. .
 本発明によれば、カソード及びアノードを有する電極ユニットを成膜室から分離させ、単体の電極ユニットにおいてメンテナンス作業を行うことができる。このため、作業スペースを大きく確保することが可能になる。また、重力方向において成膜室の上部に設けられた着脱用レールによって電極ユニットはガイドされ、電極ユニットは着脱用レールの延在方向に沿って移動する。この構造においては、例えば、成膜装置が設置されている床面に凹凸がある場合であっても成膜室から電極ユニットを容易に引き出すことができる。従って、メンテナンス作業に生じる作業負担を軽減することが可能になる。 According to the present invention, the electrode unit having the cathode and the anode can be separated from the film forming chamber, and the maintenance work can be performed in the single electrode unit. For this reason, a large work space can be secured. Further, the electrode unit is guided by a mounting / dismounting rail provided in the upper part of the film forming chamber in the direction of gravity, and the electrode unit moves along the extending direction of the mounting / detaching rail. In this structure, for example, the electrode unit can be easily pulled out from the film forming chamber even when the floor surface on which the film forming apparatus is installed is uneven. Therefore, it is possible to reduce the work load generated in the maintenance work.
本発明の実施形態における成膜装置の構成を概略的に示す図である。It is a figure which shows schematically the structure of the film-forming apparatus in embodiment of this invention. 本発明の実施形態における成膜室の構成を概略的に示す斜視図である。It is a perspective view which shows roughly the structure of the film-forming chamber in embodiment of this invention. 本発明の実施形態における成膜室の構成を概略的に示す斜視図であって、図2とは異なる斜視図である。FIG. 3 is a perspective view schematically showing a configuration of a film forming chamber in an embodiment of the present invention, which is a perspective view different from FIG. 2. 本発明の実施形態における成膜室を示す側面図である。It is a side view which shows the film-forming chamber in embodiment of this invention. 本発明の実施形態における電極ユニットの構成を概略的に示す斜視図である。It is a perspective view which shows roughly the structure of the electrode unit in embodiment of this invention. 本発明の実施形態における電極ユニットの構成を概略的に示す斜視図であって、図5とは異なる斜視図である。FIG. 6 is a perspective view schematically showing a configuration of an electrode unit in the embodiment of the present invention, which is a perspective view different from FIG. 5. 本発明の実施形態におけるカソードユニット及びアノードを示す部分断面図である。It is a fragmentary sectional view showing a cathode unit and an anode in an embodiment of the present invention. 本発明の実施形態におけるキャリアを示す斜視図である。It is a perspective view which shows the carrier in embodiment of this invention.
 以下、本発明に係る成膜装置の実施形態について、図面に基づき説明する。
 また、以下の説明に用いる各図においては、各構成要素を図面上で認識し得る程度の大きさとするため、各構成要素の寸法及び比率を実際のものとは適宜に異ならせてある。
Hereinafter, embodiments of a film forming apparatus according to the present invention will be described with reference to the drawings.
In the drawings used for the following description, the dimensions and ratios of the respective components are appropriately changed from the actual ones in order to make the respective components large enough to be recognized on the drawings.
(成膜装置)
 図1は、成膜装置の構成を概略的に示す図である。
 図1に示すように、成膜装置10は、成膜室11と、仕込・取出室13と、基板脱着室15と、基板脱着ロボット17と、基板収容カセット19とを備えている。
 成膜室11においては、複数の基板Wに対して同時に、例えば、マイクロクリスタルシリコン膜を形成することができる。
 仕込・取出室13は、成膜室11に搬入される基板W(以下、処理前基板という)と、成膜室11から搬出された基板W(以下、処理後基板という)とを同時に収容可能である。
 以下の説明において、「処理前基板」とは、成膜処理が施される前の基板(成膜処理前基板)を意味し、「処理後基板」とは、成膜処理が施された後の基板(成膜処理後基板)を意味する。
 基板脱着室15おいては、処理前基板Wがキャリア21(図8参照)に取り付けられたり、処理後基板Wがキャリア21から取り外されたりする。
 基板脱着ロボット17は、基板Wをキャリア21に取り付けたり、キャリア21から取り外したりする。
 基板収容カセット19は、成膜装置10とは異なる別の処理室に基板Wを搬送する際に用いられ、複数の基板Wを収容する。
(Deposition system)
FIG. 1 is a diagram schematically showing a configuration of a film forming apparatus.
As shown in FIG. 1, the film formation apparatus 10 includes a film formation chamber 11, a preparation / removal chamber 13, a substrate removal chamber 15, a substrate removal robot 17, and a substrate storage cassette 19.
In the film forming chamber 11, for example, a microcrystal silicon film can be formed on a plurality of substrates W simultaneously.
The preparation / removal chamber 13 can simultaneously accommodate a substrate W (hereinafter referred to as a pre-treatment substrate) carried into the film formation chamber 11 and a substrate W (hereinafter referred to as a post-treatment substrate) carried out from the film formation chamber 11. It is.
In the following description, “pre-treatment substrate” means a substrate before film formation processing (substrate before film formation treatment), and “post-treatment substrate” means after film formation processing has been performed. This means a substrate (substrate after film formation).
In the substrate removal chamber 15, the unprocessed substrate W is attached to the carrier 21 (see FIG. 8), or the processed substrate W is removed from the carrier 21.
The substrate removal robot 17 attaches or removes the substrate W to / from the carrier 21.
The substrate storage cassette 19 is used when transporting the substrate W to a different processing chamber different from the film forming apparatus 10 and stores a plurality of substrates W.
 本実施形態においては、成膜室11,仕込・取出室13,及び基板脱着室15で構成される基板成膜ライン16が4つ設けられている。
 また、基板脱着ロボット17は床面に配置(敷設)されたレール18上を移動可能であり、全ての基板成膜ライン16への基板Wの受け渡し工程を1台の基板脱着ロボット17によって行う。
 更に、基板成膜モジュール14は、成膜室11及び仕込・取出室13が一体化して構成されており、運搬用のトラックに積載可能な大きさを有する。
In the present embodiment, four substrate film forming lines 16 each including a film forming chamber 11, a loading / unloading chamber 13, and a substrate desorbing chamber 15 are provided.
Further, the substrate removal robot 17 can move on the rail 18 arranged (laid) on the floor surface, and the substrate removal robot 17 performs the process of transferring the substrate W to all the substrate deposition lines 16.
Further, the substrate film forming module 14 is configured by integrating the film forming chamber 11 and the loading / unloading chamber 13 and has a size that can be loaded on a transport truck.
(成膜室)
 図2及び図3は、成膜室11の構成を概略的に示し、図2はある位置から見た斜視図であり、図3は、図2を見た位置とは異なる位置から見た斜視図である。図4は、成膜室11の側面図である。
 図2に示すように、成膜室11は箱型に形成されている。
 仕込・取出室13と接続される成膜室11の第1側面23(図2における紙面手前に示された成膜室11の側面)には、基板Wが搭載されたキャリア21が通過するキャリア搬出入口24が3箇所形成されている。
(Deposition room)
2 and 3 schematically show the configuration of the film forming chamber 11, FIG. 2 is a perspective view seen from a certain position, and FIG. 3 is a perspective view seen from a position different from the position seen in FIG. FIG. FIG. 4 is a side view of the film forming chamber 11.
As shown in FIG. 2, the film forming chamber 11 is formed in a box shape.
A carrier through which the carrier 21 on which the substrate W is mounted passes through the first side surface 23 of the film formation chamber 11 connected to the preparation / removal chamber 13 (the side surface of the film formation chamber 11 shown in front of the paper surface in FIG. 2). Three carry-in / out entrances 24 are formed.
 キャリア搬出入口24には、このキャリア搬出入口24を開閉するシャッタ25が設けられている。シャッタ25を閉止した時には、キャリア搬出入口24は成膜室11の気密性を確保するように閉止される。また、成膜室11の側面下部には成膜室11内が真空雰囲気となるように減圧するために用いられる排気管29が接続されており、排気管29には真空ポンプ30が設けられている(図4参照)。 The carrier carry-in / out port 24 is provided with a shutter 25 that opens and closes the carrier carry-in / out port 24. When the shutter 25 is closed, the carrier carry-in / out port 24 is closed so as to ensure the airtightness of the film forming chamber 11. Further, an exhaust pipe 29 used for decompressing the film forming chamber 11 so as to be in a vacuum atmosphere is connected to the lower side of the side surface of the film forming chamber 11. A vacuum pump 30 is provided in the exhaust pipe 29. (See FIG. 4).
 図3に示すように、第1側面23とは反対に位置する第2側面27(図3における紙面手前に示された成膜室11の側面)には、基板Wに膜を形成するために用いられる電極ユニット31が3基取り付けられている。これら電極ユニット31は、成膜室11から第2側面27と略直行する方向に沿って着脱可能である。
 ここで、重力方向において成膜室11の上面22(上部)には、電極ユニット31が懸架される着脱用レール41が3箇所、互いに略並行に設けられている。各着脱用レール41は、それぞれ電極ユニット31の上方に位置し、かつ電極ユニット31の着脱方向に沿って延在している。
As shown in FIG. 3, in order to form a film on the substrate W on the second side surface 27 (the side surface of the film forming chamber 11 shown in front of the paper surface in FIG. 3) located opposite to the first side surface 23. Three electrode units 31 to be used are attached. These electrode units 31 are detachable from the film forming chamber 11 along a direction substantially perpendicular to the second side surface 27.
Here, on the upper surface 22 (upper part) of the film forming chamber 11 in the gravity direction, three attachment / detachment rails 41 on which the electrode unit 31 is suspended are provided substantially in parallel with each other. Each attachment / detachment rail 41 is positioned above the electrode unit 31 and extends along the attachment / detachment direction of the electrode unit 31.
 着脱用レール41としては、例えば、I形鋼が用いられる。着脱用レール41の長さL1は、電極ユニット31を成膜室11から完全に引き出すことが可能な長さに設定されている。即ち、長さL1は、電極ユニット31を成膜室11の外部に露出するように電極ユニット11が移動する距離に応じて決定されている。着脱用レール41には、吊部43がスライド自在に設けられており、吊部43に電極ユニット31の上端が取り付けられている。また、各着脱用レール41上には、それぞれケーブルベア44が配置(敷設)されている。ケーブルベア44には、ケーブルKが収納されている。ケーブルKは、第一端と第一端とは反対に位置する第二端とを有する。ケーブルKの第一端は、電極ユニット31に接続されている。 As the detachable rail 41, for example, I-shaped steel is used. The length L1 of the detachable rail 41 is set to a length that allows the electrode unit 31 to be completely pulled out from the film forming chamber 11. That is, the length L1 is determined according to the distance that the electrode unit 11 moves so that the electrode unit 31 is exposed to the outside of the film forming chamber 11. A hanging portion 43 is slidably provided on the detachable rail 41, and the upper end of the electrode unit 31 is attached to the hanging portion 43. A cable bear 44 is disposed (laid) on each detachable rail 41. A cable K is stored in the cable bear 44. The cable K has a first end and a second end located opposite to the first end. The first end of the cable K is connected to the electrode unit 31.
 着脱用レール41の先端には、レール支持部材42が立設されている。レール支持部材42は、渡り部42Aと支持部42B,42Bとで構成されている。渡り部42Aは、着脱用レール41が並列している方向に、かつ略水平方向に沿って延在している。支持部42B,42Bは、渡り部42Aの両端を支持している。渡り部42Aの材料及び構造としては、例えば、I形鋼が用いられる。また、支持部42B,42Bの材料及び構造としては、例えば、角パイプ(角パイプ鋼)が用いられる。2つの支持部42B,42B間の距離W1は、3基の電極ユニット31が2つの支持部42B,42Bの間を通過可能な長さに設定されている。
 なお、着脱用レール41又は渡り部42Aとして用いられるI形鋼のサイズとしては、例えば、電極ユニット31の重量が約1.5tである場合、200×150(高さH×幅B)サイズのI形鋼が用いられる。
A rail support member 42 is erected at the tip of the detachable rail 41. The rail support member 42 includes a crossing portion 42A and support portions 42B and 42B. The crossover portion 42A extends in a direction in which the attachment / detachment rails 41 are arranged in parallel and in a substantially horizontal direction. The support portions 42B and 42B support both ends of the crossover portion 42A. As the material and structure of the crossover part 42A, for example, I-shaped steel is used. Moreover, as a material and structure of support part 42B, 42B, a square pipe (square pipe steel) is used, for example. The distance W1 between the two support portions 42B and 42B is set to a length that allows the three electrode units 31 to pass between the two support portions 42B and 42B.
As the size of the I-shaped steel used as the detachable rail 41 or the crossing portion 42A, for example, when the weight of the electrode unit 31 is about 1.5 t, the size is 200 × 150 (height H × width B). I-shaped steel is used.
(電極ユニット)
 図5及び図6は、電極ユニット31の構成を概略的に示し、図5はある位置から見た斜視図であり、図6は、図5を見た位置とは異なる位置から見た斜視図である。図7は、カソードユニット68及びアノード67(対向電極)の部分断面図である。
 図5~図7に示すように、電極ユニット31は、成膜室11の第2側面27に形成された3箇所の開口部26に着脱可能である(図3参照)。電極ユニット31は、台車60を備えており、床面上を移動可能である。台車60は、底板部62と、底板部62の4隅に取り付けられている車輪61とによって構成されている。
 底板部62は、電極ユニット31が成膜室11から引き出される方向において、成膜室11に隣接する前部62a(カソードユニット68に近い位置、図6における右側)と、前部とは反対に位置する後部62b(図6における左側)と、前部62aと後部62bとの間に位置する中央部62cを有する。
(Electrode unit)
5 and 6 schematically show the configuration of the electrode unit 31, FIG. 5 is a perspective view seen from a certain position, and FIG. 6 is a perspective view seen from a position different from the position seen in FIG. It is. FIG. 7 is a partial cross-sectional view of the cathode unit 68 and the anode 67 (counter electrode).
As shown in FIGS. 5 to 7, the electrode unit 31 can be attached to and detached from three openings 26 formed in the second side surface 27 of the film forming chamber 11 (see FIG. 3). The electrode unit 31 includes a carriage 60 and is movable on the floor surface. The carriage 60 includes a bottom plate portion 62 and wheels 61 attached to the four corners of the bottom plate portion 62.
The bottom plate portion 62 is opposite to the front portion 62a (position near the cathode unit 68, right side in FIG. 6) adjacent to the film forming chamber 11 in the direction in which the electrode unit 31 is pulled out from the film forming chamber 11. The rear part 62b is located (left side in FIG. 6), and the center part 62c is located between the front part 62a and the rear part 62b.
 底板部62の後部62bには、支持部46が立設されている。支持部46は、角パイプにより櫓状に形成されている。支持部46は、懸架部461及び収納部462によって構成されている。収納部462は、後部62bにおいて底板部62の端部に設けられている。また、台車60の表面から収納部462の上部までの高さは、台車60の表面から懸架部461の上部までの高さよりも低い。懸架部461の上部461Aには、着脱用レール41の吊部43と連結可能な連結部47が設けられている。 A support portion 46 is erected on the rear portion 62 b of the bottom plate portion 62. The support part 46 is formed in a bowl shape by a square pipe. The support unit 46 includes a suspension unit 461 and a storage unit 462. The storage portion 462 is provided at the end of the bottom plate portion 62 in the rear portion 62b. In addition, the height from the surface of the carriage 60 to the upper portion of the storage portion 462 is lower than the height from the surface of the carriage 60 to the upper portion of the suspension portion 461. A connecting portion 47 that can be connected to the hanging portion 43 of the detachable rail 41 is provided on the upper portion 461A of the suspension portion 461.
 また、懸架部461には、ケーブルKを案内するガイドプレート48が重力方向に沿って延びるように設けられている。ガイドプレート48は、後部62bの上方に位置している。ガイドプレート48の先端には、ケーブルベア44の一端が取り付けられている。ケーブルKの第一端は、電極ユニット31に接続されている。ケーブルKの第二端は、ガイドプレート48に案内されながらケーブルベア44内へ配置(配索、cabling)されている。 Further, a guide plate 48 for guiding the cable K is provided on the suspension portion 461 so as to extend along the direction of gravity. The guide plate 48 is located above the rear part 62b. One end of a cable bear 44 is attached to the tip of the guide plate 48. The first end of the cable K is connected to the electrode unit 31. The second end of the cable K is arranged (routed) in the cable bear 44 while being guided by the guide plate 48.
 また、底板部62の中央部62cにおいては、底板部62から鉛直方向に沿って立ち上がる側板部63が設けられている。即ち、懸架部462よりも成膜室11に近い位置に側板部63が設けられている。この側板部63は、成膜室11の第2側面27の開口部26を閉塞するように、開口部26よりも大きなサイズで形成されている。つまり、側板部63は、成膜室11の壁面の一部を構成している。
 側板部63の一方の面65(成膜室11の内部を向く面)には、基板W上に膜を形成する際に用いられ、基板Wの両面の各々に対向するように配置されるアノード67とカソードユニット68とが設けられている。
Further, a side plate portion 63 that rises from the bottom plate portion 62 along the vertical direction is provided at the center portion 62 c of the bottom plate portion 62. That is, the side plate portion 63 is provided at a position closer to the film forming chamber 11 than the suspension portion 462. The side plate portion 63 is formed in a size larger than the opening portion 26 so as to close the opening portion 26 of the second side surface 27 of the film forming chamber 11. That is, the side plate portion 63 constitutes a part of the wall surface of the film forming chamber 11.
On one surface 65 (the surface facing the inside of the film forming chamber 11) of the side plate portion 63, an anode used when forming a film on the substrate W and disposed so as to face each of both surfaces of the substrate W. 67 and a cathode unit 68 are provided.
 即ち、電極ユニット31においては、カソードユニット68を挟むように、カソードユニット68の両側から離間してアノード67が配置されており、カソードユニット68の各々とアノード67との間に成膜空間81が形成されている。
 各成膜空間81,81の各々に基板Wを配置することにより、一つの電極ユニット31において2枚の基板W上に膜を同時に形成することができる。
That is, in the electrode unit 31, the anode 67 is arranged so as to be spaced from both sides of the cathode unit 68 so as to sandwich the cathode unit 68, and a film formation space 81 is formed between each cathode unit 68 and the anode 67. Is formed.
By disposing the substrate W in each of the film formation spaces 81, 81, a film can be simultaneously formed on the two substrates W in one electrode unit 31.
 支持部46を構成する収納部462には、アノード67を駆動させるために用いられる駆動機構71と、基板W上に膜を形成する際にカソードユニット68に給電するために用いられるマッチングボックス72(詳細は後述する)とが取り付けられている。また、側板部63には、カソードユニット68に成膜ガスを供給する配管として用いられる接続部(不図示)が形成されている。 The storage portion 462 constituting the support portion 46 includes a drive mechanism 71 used to drive the anode 67 and a matching box 72 (used to supply power to the cathode unit 68 when a film is formed on the substrate W. The details will be described later). Further, the side plate portion 63 is formed with a connection portion (not shown) used as a pipe for supplying a film forming gas to the cathode unit 68.
 このような構成においては、カソードユニット68に成膜ガスを供給する配管としてフレキシブル配管を採用し、このフレキシブル配管をガイドプレート48に沿って配置し、ケーブルベア44内にフレキシブル配管を収納してもよい。
 また、例えば、着脱用レール41の先端に立設されているレール支持部材42の支持部42Bにマッチングボックス72(図3に2点鎖線で示す)を設け、このマッチングボックス72が3基の電極ユニット31において共通で使用される構成が採用されてもよい。このような構成を有する成膜装置においては、各電極ユニット31にそれぞれマッチングボックス72を設ける必要がなく、成膜装置10に設置されるマッチングボックス72の個数を減少させることができる。
In such a configuration, even if flexible piping is adopted as piping for supplying the film forming gas to the cathode unit 68, this flexible piping is arranged along the guide plate 48, and the flexible piping is accommodated in the cable bear 44. Good.
In addition, for example, a matching box 72 (indicated by a two-dot chain line in FIG. 3) is provided on the support portion 42B of the rail support member 42 erected at the tip of the detachable rail 41, and the matching box 72 includes three electrodes. A configuration commonly used in the unit 31 may be adopted. In the film forming apparatus having such a configuration, it is not necessary to provide the matching box 72 in each electrode unit 31, and the number of matching boxes 72 installed in the film forming apparatus 10 can be reduced.
(アノード)
 図7に示すように、アノード67には、基板Wの温度を調整する温度制御装置として、ヒータHが内蔵されている。また、2枚のアノード67,67は側板部63に設けられた駆動機構71によって、アノード67がカソードユニット68に近づく方向と、アノード67がカソードユニット68から離れる方向とにおいて、即ち、水平方向において移動可能である。駆動機構71は、基板Wとカソードユニット68との距離を制御する。
(anode)
As shown in FIG. 7, a heater H is incorporated in the anode 67 as a temperature control device that adjusts the temperature of the substrate W. The two anodes 67 and 67 are driven by a drive mechanism 71 provided on the side plate portion 63 in a direction in which the anode 67 approaches the cathode unit 68 and a direction in which the anode 67 moves away from the cathode unit 68, that is, in the horizontal direction. It is movable. The drive mechanism 71 controls the distance between the substrate W and the cathode unit 68.
 具体的に、基板W上に膜を形成する際には、2枚のアノード67,67がカソードユニット68に向かって移動(図7における矢印参照)して基板Wと当接する。更に、2枚のアノード67,67は、カソードユニット68に近づくように移動し、基板Wとカソードユニット68との距離が所望の距離に調節される。その後、基板W上に膜を形成する成膜処理を行い、成膜処理が終了した後に、アノード67,67は、カソードユニット68から離れるように移動する。このように駆動機構71がアノード67,67の位置を制御することにより、基板Wを電極ユニット31から容易に取り出すことができる。 Specifically, when a film is formed on the substrate W, the two anodes 67 and 67 move toward the cathode unit 68 (see the arrow in FIG. 7) and come into contact with the substrate W. Further, the two anodes 67 and 67 move so as to approach the cathode unit 68, and the distance between the substrate W and the cathode unit 68 is adjusted to a desired distance. Thereafter, a film forming process for forming a film on the substrate W is performed. After the film forming process is completed, the anodes 67 and 67 move away from the cathode unit 68. Thus, the drive mechanism 71 controls the positions of the anodes 67 and 67, whereby the substrate W can be easily taken out from the electrode unit 31.
 更に、アノード67は、駆動機構71にヒンジ(不図示)等を介して取りつけられており、電極ユニット31を成膜室11から引き抜いた状態で、アノード67のカソードユニット68に対向する面67Aが側板部63の一方の面65と略平行になるまで回動できる(開く)。
 つまり、アノード67は、底板部62の鉛直方向から見て略90°回動できるように構成されている(図5参照)。
Further, the anode 67 is attached to the drive mechanism 71 via a hinge (not shown) or the like, and a surface 67A facing the cathode unit 68 of the anode 67 is formed in a state where the electrode unit 31 is pulled out from the film forming chamber 11. It can be rotated (opened) until it becomes substantially parallel to one surface 65 of the side plate portion 63.
That is, the anode 67 is configured to be able to turn approximately 90 ° when viewed from the vertical direction of the bottom plate portion 62 (see FIG. 5).
(カソードユニット)
 カソードユニット68は、シャワープレート75(カソード)と、シャワープレート75の外周部に接触しているカソード中間部材76と、排気ダクト79と、浮遊容量体82とを有している。カソードユニット68においては、アノード67と対向する面であって、カソードユニット68の両側に、シャワープレート75が配置されている。各シャワープレート75,75には、それぞれ複数の小孔(不図示)が形成されており、この小孔74から基板Wに向かって成膜ガスが噴出される。
(Cathode unit)
The cathode unit 68 includes a shower plate 75 (cathode), a cathode intermediate member 76 that is in contact with the outer periphery of the shower plate 75, an exhaust duct 79, and a floating capacity body 82. In the cathode unit 68, shower plates 75 are arranged on the surface facing the anode 67 and on both sides of the cathode unit 68. Each shower plate 75, 75 has a plurality of small holes (not shown), and a film forming gas is ejected from the small holes 74 toward the substrate W.
 カソード中間部材76は、マッチングボックス72と図示しない配線により電気的に接続されている。マッチングボックス72は、カソード中間部材76と高周波電源との間のマッチング(インピーダンスマッチング)を行う機能を有し、ケーブルベア44に収納されたケーブルKを介して不図示の高周波電源に接続されている。つまり、カソード中間部材76は、不図示の配線,マッチングボックス72,及びケーブルKを介して高周波電源に接続されている。 The cathode intermediate member 76 is electrically connected to the matching box 72 through a wiring (not shown). The matching box 72 has a function of performing matching (impedance matching) between the cathode intermediate member 76 and the high frequency power source, and is connected to a high frequency power source (not shown) via a cable K housed in the cable bear 44. . That is, the cathode intermediate member 76 is connected to a high frequency power source via a wiring (not shown), the matching box 72, and the cable K.
 カソード中間部材76及びシャワープレート75は導電体で形成されており、各シャワープレート75,75は、カソード中間部材76を介してマッチングボックス72に電気的に接続されている。つまり、各シャワープレート75,75は、カソード(高周波電極)として機能する。シャワープレート75とアノード67との間にプラズマを発生するために同電位・同位相の電圧が各シャワープレート75,75に印加される。 The cathode intermediate member 76 and the shower plate 75 are made of a conductor, and each shower plate 75, 75 is electrically connected to the matching box 72 via the cathode intermediate member 76. That is, each shower plate 75, 75 functions as a cathode (high frequency electrode). In order to generate plasma between the shower plate 75 and the anode 67, voltages having the same potential and the same phase are applied to the shower plates 75 and 75, respectively.
 また、カソード中間部材76とシャワープレート75,75との間には、空間部77,77が形成されており、ガス供給装置(不図示)からこの空間部77,77に成膜ガスが導入される。空間部77,77はカソード中間部材76で分離されており、シャワープレート75,75毎に対応して別々に形成されている。各シャワープレート75,75から放出されるガスは、独立して制御される。即ち、空間部77,77は、ガス供給路として機能する。この実施形態においては、空間部77,77の各々がシャワープレート75,75毎に対応して形成されているので、カソードユニット68は、2系統のガス供給路を有している。 Space portions 77 and 77 are formed between the cathode intermediate member 76 and the shower plates 75 and 75, and a film forming gas is introduced into the space portions 77 and 77 from a gas supply device (not shown). The The spaces 77 and 77 are separated by the cathode intermediate member 76 and are formed separately corresponding to the shower plates 75 and 75. The gas discharged from each shower plate 75, 75 is controlled independently. That is, the spaces 77 and 77 function as a gas supply path. In this embodiment, since each of the space portions 77 and 77 is formed corresponding to each shower plate 75 and 75, the cathode unit 68 has two systems of gas supply paths.
 更に、カソードユニット68の周縁部には、カソードユニット68の略全周において中空状の排気ダクト79が設けられている。排気ダクト79には、成膜空間81内に存在する成膜ガス又は反応副生成物(パウダー)を排気するために用いられる排気口80が形成されている。具体的には、成膜工程を行う際の基板Wとシャワープレート75との間に形成される成膜空間81に連通するように(面するように)排気口80が形成されている。排気口80はカソードユニット68の周縁部に沿って複数形成されており、カソードユニット68の全周において略均等に成膜ガス又は反応生成物(パウダー)を吸引して除去できるように構成されている。 Furthermore, a hollow exhaust duct 79 is provided at the peripheral edge of the cathode unit 68 at substantially the entire circumference of the cathode unit 68. The exhaust duct 79 is formed with an exhaust port 80 used for exhausting a film forming gas or a reaction byproduct (powder) existing in the film forming space 81. Specifically, the exhaust port 80 is formed so as to communicate with (be face) the film formation space 81 formed between the substrate W and the shower plate 75 when performing the film formation process. A plurality of the exhaust ports 80 are formed along the peripheral edge of the cathode unit 68, and are configured so that the film forming gas or the reaction product (powder) can be sucked and removed almost uniformly on the entire circumference of the cathode unit 68. Yes.
 また、カソードユニット68の下部に位置する排気ダクト79の成膜室11内へ向いた面には開口部(不図示)が形成されている。排気口80を通じて除去された成膜ガス等は、この開口部を介して成膜室11内へ排出される。成膜室11内へ排出されたガスは、成膜室11の側面下部に設けられた排気管29を通じて、成膜室11の外部へ排気される。 Further, an opening (not shown) is formed on the surface of the exhaust duct 79 located below the cathode unit 68 and facing the film forming chamber 11. The film forming gas removed through the exhaust port 80 is discharged into the film forming chamber 11 through this opening. The gas discharged into the film formation chamber 11 is exhausted to the outside of the film formation chamber 11 through an exhaust pipe 29 provided at the lower side of the film formation chamber 11.
 また、排気ダクト79とカソード中間部材76との間、つまり、カソード中間部材76に形成されているフランジ部の外周面には、誘電体及び浮遊容量体82の少なくとも一つが設けられている。また、浮遊容量体82は、積層空間を有する。排気ダクト79は、接地電位に接続されている。排気ダクト79は、シャワープレート75及びカソード中間部材76にて発生する異常放電を防止するために用いられるシールド枠としても機能する。 Further, at least one of a dielectric and a floating capacitor 82 is provided between the exhaust duct 79 and the cathode intermediate member 76, that is, on the outer peripheral surface of the flange portion formed on the cathode intermediate member 76. In addition, the stray capacitance body 82 has a stacked space. The exhaust duct 79 is connected to the ground potential. The exhaust duct 79 also functions as a shield frame used to prevent abnormal discharge that occurs in the shower plate 75 and the cathode intermediate member 76.
 更に、カソードユニット68の周縁部には、排気ダクト79の外周部からカソード中間部材76の外周部に至る部位(領域)を覆うようにマスク78が設けられている。このマスク78は、キャリア21に設けられた後述する挟持部59の挟持片59A(図8参照)を被覆すると共に、成膜工程を行う際に挟持片59Aと一体となって空間部77に存在する成膜ガス又は反応生成物(パウダー)を排気ダクト79に導くガス流路Rを形成している。即ち、キャリア21(挟持片59A)を被覆するマスク78とシャワープレート75との間、及びマスク78と排気ダクト79との間にガス流路Rが形成されている。なお、排気ダクト79,マスク78,及びガス流路Rを設けず、空間部77から基板Wの外周に向けて成膜ガス又は反応生成物(パウダー)を排気してもよい。 Further, a mask 78 is provided on the peripheral edge of the cathode unit 68 so as to cover a portion (region) extending from the outer periphery of the exhaust duct 79 to the outer periphery of the cathode intermediate member 76. The mask 78 covers a clamping piece 59A (see FIG. 8) of the clamping part 59, which will be described later, provided on the carrier 21, and is present in the space 77 integrally with the clamping piece 59A when the film forming process is performed. A gas flow path R that guides the film forming gas or the reaction product (powder) to the exhaust duct 79 is formed. That is, the gas flow path R is formed between the mask 78 and the shower plate 75 covering the carrier 21 (the sandwiching piece 59A) and between the mask 78 and the exhaust duct 79. Note that the film forming gas or the reaction product (powder) may be exhausted from the space 77 toward the outer periphery of the substrate W without providing the exhaust duct 79, the mask 78, and the gas flow path R.
(仕込・取出室)
 図1に示すように、成膜室11と仕込・取出室13との間、及び、仕込・取出室13と基板脱着室15との間をキャリア21が移動できるように、移動レール37が成膜室11と基板脱着室15との間に敷設されている。
 仕込・取出室13は、箱型に形成されている。
 仕込・取出室13の一側面(図1における下側の面)には、基板Wが搭載されたキャリア21が通過可能なキャリア搬出入口(不図示)が設けられている。このキャリア搬出入口には、仕込・取出室13の気密性を確保できるシャッタ36が設けられている。また、仕込・取出室13には、不図示の真空ポンプが接続されており、真空ポンプは仕込・取出室13の内部を真空状態となるように減圧する。
(Preparation / removal room)
As shown in FIG. 1, a moving rail 37 is formed so that the carrier 21 can move between the film forming chamber 11 and the loading / unloading chamber 13 and between the loading / unloading chamber 13 and the substrate desorption chamber 15. It is laid between the film chamber 11 and the substrate desorption chamber 15.
The preparation / removal chamber 13 is formed in a box shape.
A carrier carry-in / out port (not shown) through which the carrier 21 on which the substrate W is mounted is provided on one side surface (lower surface in FIG. 1) of the preparation / removal chamber 13. A shutter 36 that can ensure the airtightness of the charging / extraction chamber 13 is provided at the carrier carry-in / out entrance. Further, a vacuum pump (not shown) is connected to the preparation / removal chamber 13, and the vacuum pump depressurizes the inside of the preparation / removal chamber 13 so as to be in a vacuum state.
 更に、仕込・取出室13には、移動レール37に沿って成膜室11と仕込・取出室13との間でキャリア21を移動させる不図示のプッシュ-プル機構が設けられている。
 また、仕込・取出室13内において、処理前基板及び処理後基板を同時に(一括して)収容させるために、移動機構(不図示)が設けられている。この移動機構は、成膜装置10が設置される床面の鉛直方向から見た平面図において、移動レール37が敷設する方向に略直交する方向にキャリア21を所定距離移動させる。
Further, the loading / unloading chamber 13 is provided with a push-pull mechanism (not shown) that moves the carrier 21 between the film forming chamber 11 and the loading / unloading chamber 13 along the moving rail 37.
In addition, a moving mechanism (not shown) is provided in the preparation / removal chamber 13 in order to accommodate the pre-treatment substrate and the post-treatment substrate simultaneously (collectively). This moving mechanism moves the carrier 21 by a predetermined distance in a direction substantially orthogonal to the direction in which the moving rail 37 is laid in a plan view viewed from the vertical direction of the floor surface on which the film forming apparatus 10 is installed.
(基板脱着室)
 基板脱着室15においては、移動レール37に配置されているキャリア21に対して処理前基板を取り付けることができ、処理後基板をキャリア21から取り外すことができる。基板脱着室15においては、3個のキャリア21を並列して配置することができる。
(Substrate desorption chamber)
In the substrate removal chamber 15, the pre-treatment substrate can be attached to the carrier 21 arranged on the moving rail 37, and the post-treatment substrate can be detached from the carrier 21. In the substrate desorption chamber 15, three carriers 21 can be arranged in parallel.
(基板脱着ロボット)
 基板脱着ロボット17は、駆動アーム45を有しており、駆動アーム45の先端に基板Wを吸着する吸着部を有する。また、駆動アーム45は、基板脱着室15に配置されたキャリア21と基板収容カセット19との間を駆動する。具体的に、駆動アーム45は、基板収容カセット19から処理前基板を取り出して、基板脱着室15に配置されたキャリア21に処理前基板を取り付けることができる。更に、駆動アーム45は、処理後基板を基板脱着室15に戻ってきたキャリア21から取り外し、基板収容カセット19へ搬送することができる。
(Substrate removal robot)
The substrate removal robot 17 has a drive arm 45, and has a suction unit that sucks the substrate W at the tip of the drive arm 45. The drive arm 45 drives between the carrier 21 disposed in the substrate removal chamber 15 and the substrate storage cassette 19. Specifically, the drive arm 45 can take out the pre-treatment substrate from the substrate accommodation cassette 19 and attach the pre-treatment substrate to the carrier 21 disposed in the substrate removal chamber 15. Further, the drive arm 45 can remove the processed substrate from the carrier 21 that has returned to the substrate removal chamber 15 and transport the substrate to the substrate storage cassette 19.
(キャリア)
 図8は、キャリア21を示す斜視図である。図8に示すように、キャリア21は、基板Wを搬送するために用いられ、基板Wを取り付けることができる額縁状の2個のフレーム51が形成されている。つまり、一つのキャリア21において、基板Wを2枚取り付けることができる。2個のフレーム51,51は、その上部において連結部材52によって一体化されている。
 また、連結部材52の上方には、移動レール37に載置される車輪53が設けられている。移動レール37上を車輪53が転がることにより、キャリア21が移動レール37に沿って移動可能である。
(Career)
FIG. 8 is a perspective view showing the carrier 21. As shown in FIG. 8, the carrier 21 is used for transporting the substrate W, and two frame-shaped frames 51 to which the substrate W can be attached are formed. That is, two substrates W can be attached to one carrier 21. The two frames 51 and 51 are integrated by a connecting member 52 at an upper portion thereof.
Further, above the connecting member 52, a wheel 53 placed on the moving rail 37 is provided. When the wheel 53 rolls on the moving rail 37, the carrier 21 can move along the moving rail 37.
 更に、フレーム51の下部には、キャリア21が移動する際に基板Wの揺れを抑制するためにフレームホルダ54が設けられている。フレームホルダ54の先端は、各室の底面上に設けられた、断面形状が凹状であるレール部材(不図示)に嵌合されている。なお、成膜装置10が設置される床面の鉛直方向から見た平面図において、不図示のレール部材は移動レール37に沿う方向に配置されている。
 フレームホルダ54を複数のローラで構成すれば、より安定に基板Wを搬送することができる。
Further, a frame holder 54 is provided below the frame 51 in order to suppress the shaking of the substrate W when the carrier 21 moves. The front end of the frame holder 54 is fitted to a rail member (not shown) provided on the bottom surface of each chamber and having a concave cross-sectional shape. In addition, in the plan view seen from the vertical direction of the floor surface on which the film forming apparatus 10 is installed, a rail member (not shown) is arranged in a direction along the moving rail 37.
If the frame holder 54 is composed of a plurality of rollers, the substrate W can be transported more stably.
 フレーム51の各々は、開口部56,周縁部57,及び挟持部59を有している。フレーム51に基板Wが搭載された場合に、開口部56においては基板Wの被成膜面である表面が露出される。開口部56の周縁部57において、挟持部59によって基板Wの両面が挟持され、基板Wはフレーム51に固定される。
 挟持部59は、基板Wの表面に当接する挟持片59Aと、基板Wの裏面(背面)に当接する挟持片59Bとで構成されている。挟持片59A,59Bは、バネ等を介して連結されている。このバネによって、挟持片59Aと挟持片59Bとが互いに近接する方向に向かって付勢力が作用する。
Each of the frames 51 has an opening 56, a peripheral edge 57, and a clamping part 59. When the substrate W is mounted on the frame 51, the surface that is the film formation surface of the substrate W is exposed at the opening 56. At the peripheral edge 57 of the opening 56, both surfaces of the substrate W are sandwiched by the sandwiching portion 59, and the substrate W is fixed to the frame 51.
The sandwiching portion 59 includes a sandwiching piece 59A that abuts on the front surface of the substrate W and a sandwiching piece 59B that abuts on the back surface (back surface) of the substrate W. The clamping pieces 59A and 59B are connected via a spring or the like. By this spring, a biasing force acts in a direction in which the sandwiching piece 59A and the sandwiching piece 59B are close to each other.
 また、挟持片59Aが挟持片59Bに近づく方向又は挟持片59Aが挟持片59Bから離れる方向において、挟持片59Aは、アノード67の移動に応じて移動可能である。ここで、キャリア21は、一つの移動レール37上に1つ取り付けられている。つまり、一つの移動レール37上に一対(2枚)の基板Wを保持できる1つのキャリア21が取り付けられている。従って、一組の成膜装置10においては、3個のキャリア21が取り付けられ、即ち、3対(6枚)の基板が保持される。 Also, the clamping piece 59A is movable in accordance with the movement of the anode 67 in the direction in which the clamping piece 59A approaches the clamping piece 59B or in the direction in which the clamping piece 59A moves away from the clamping piece 59B. Here, one carrier 21 is attached on one moving rail 37. That is, one carrier 21 that can hold a pair (two) of substrates W on one moving rail 37 is attached. Accordingly, in one set of film forming apparatus 10, three carriers 21 are attached, that is, three pairs (six substrates) are held.
(薄膜太陽電池の製造方法)
 次に、成膜装置10を用いて、基板Wに膜を形成する方法を説明する。
 なお、この説明においては、一つの基板成膜ライン16の図面を用いるが、他の三つの基板成膜ライン16においても略同様の方法により基板に膜を形成する。
 図1に示すように、処理前基板(基板W)を複数枚収容した基板収容カセット19を所定の位置に配置する。
(Method for manufacturing thin film solar cell)
Next, a method for forming a film on the substrate W using the film forming apparatus 10 will be described.
In this description, the drawing of one substrate film forming line 16 is used, but a film is also formed on the substrate in the other three substrate film forming lines 16 by substantially the same method.
As shown in FIG. 1, a substrate storage cassette 19 that stores a plurality of pre-processed substrates (substrates W) is disposed at a predetermined position.
 次に、基板脱着ロボット17の駆動アーム45を動かして、基板収容カセット19から処理前基板を一枚取り出し、この処理前基板を基板脱着室15に設置されているキャリア21(図8参照)に取り付ける。この時、基板収容カセット19において水平方向に配置された処理前基板の配置方向は、鉛直方向に変わり、処理前基板がキャリア21に取り付けられる。この動作をもう一度繰り返し、一つのキャリア21に2枚の処理前基板を取り付ける。
 更に、この動作を繰り返して、基板脱着室15に設置されている残り二つのキャリア21にも処理前基板をそれぞれ取り付ける。つまり、この段階で、3つのキャリア21に処理前基板を6枚取り付ける。
Next, the drive arm 45 of the substrate removal robot 17 is moved to take out one unprocessed substrate from the substrate storage cassette 19, and this unprocessed substrate is placed on the carrier 21 (see FIG. 8) installed in the substrate removal chamber 15. Install. At this time, the arrangement direction of the unprocessed substrates arranged in the horizontal direction in the substrate accommodation cassette 19 changes to the vertical direction, and the unprocessed substrates are attached to the carrier 21. This operation is repeated once, and two pre-treatment substrates are attached to one carrier 21.
Further, this operation is repeated to attach the pre-treatment substrates to the remaining two carriers 21 installed in the substrate removal chamber 15. That is, at this stage, six pre-treatment substrates are attached to the three carriers 21.
 続いて、処理前基板が取り付けられた3個のキャリア21は、移動レール37に沿って略同時に移動し、仕込・取出室13内に収容される。仕込・取出室13にキャリア21が収容された後、仕込・取出室13のキャリア搬出入口(不図示)のシャッタ36が閉じる。その後、仕込・取出室13の内部は、真空ポンプ(不図示)を用いて真空状態に保持される。
 次に、成膜装置10が設置される床面の鉛直方向から見た平面図において、移動機構を用いて、移動レール37が敷設された方向と直交する方向に3個のキャリア21の各々を所定距離移動させる。
Subsequently, the three carriers 21 to which the unprocessed substrates are attached move substantially simultaneously along the moving rail 37 and are accommodated in the preparation / removal chamber 13. After the carrier 21 is accommodated in the preparation / removal chamber 13, the shutter 36 at the carrier loading / unloading port (not shown) of the preparation / removal chamber 13 is closed. Thereafter, the inside of the preparation / removal chamber 13 is kept in a vacuum state using a vacuum pump (not shown).
Next, in the plan view seen from the vertical direction of the floor surface on which the film forming apparatus 10 is installed, each of the three carriers 21 is moved in a direction orthogonal to the direction in which the moving rail 37 is laid using a moving mechanism. Move a predetermined distance.
 続いて、成膜室11のシャッタ25を開き、成膜室11において成膜処理が終了した処理後基板が取り付けられたキャリア21をプッシュ-プル機構(不図示)を用いて仕込・取出室13に移動させる。
 更に、プッシュ-プル機構を用いて処理前基板を保持したキャリア21を成膜室11に移動させる。キャリア21の移動が完了した後に、シャッタ25が閉じる。なお、成膜室11の内部は、真空状態が保持されている。
 このとき、キャリア21に取り付けられた処理前基板は、処理前基板の面に平行な方向に沿って移動する。成膜室11内において、処理前基板の表面が重力方向と略並行となるように、処理前基板は、アノード67とカソードユニット68との間に鉛直方向に沿って挿入される。
Subsequently, the shutter 25 of the film forming chamber 11 is opened, and the carrier 21 to which the post-processing substrate after the film forming process is completed in the film forming chamber 11 is loaded using a push-pull mechanism (not shown). Move to.
Further, the carrier 21 holding the unprocessed substrate is moved to the film forming chamber 11 using a push-pull mechanism. After the movement of the carrier 21 is completed, the shutter 25 is closed. Note that the inside of the film forming chamber 11 is kept in a vacuum state.
At this time, the substrate before processing attached to the carrier 21 moves along a direction parallel to the surface of the substrate before processing. In the film forming chamber 11, the pre-treatment substrate is inserted along the vertical direction between the anode 67 and the cathode unit 68 so that the surface of the pre-treatment substrate is substantially parallel to the direction of gravity.
 次に、駆動機構71は、アノード67がカソードユニット68に近づく方向(図7における矢印参照)に電極ユニット31の2枚のアノード67を移動させて、アノード67と基板Wの裏面とを当接させる。更に、駆動機構71の駆動によって、アノード67に押されるように処理前基板がカソードユニット68に向かって移動する。また、基板Wとカソードユニット68のシャワープレート75との隙間が所定距離(成膜距離)になるまで、処理前基板がカソードユニット68に向けて移動する。なお、基板Wとカソードユニット68のシャワープレート75との隙間(成膜距離)は5~15mmで、例えば5mm程度である。 Next, the drive mechanism 71 moves the two anodes 67 of the electrode unit 31 in the direction in which the anode 67 approaches the cathode unit 68 (see the arrow in FIG. 7), so that the anode 67 and the back surface of the substrate W come into contact with each other. Let Further, by driving the drive mechanism 71, the pre-treatment substrate moves toward the cathode unit 68 so as to be pushed by the anode 67. Further, the pre-treatment substrate moves toward the cathode unit 68 until the gap between the substrate W and the shower plate 75 of the cathode unit 68 reaches a predetermined distance (film formation distance). The gap (film formation distance) between the substrate W and the shower plate 75 of the cathode unit 68 is 5 to 15 mm, for example, about 5 mm.
 このとき、基板Wの表面に当接しているキャリア21の挟持片59Aは、基板Wの移動(アノード67の移動)に伴って挟持片59Bから離れるように変位する。そして、基板Wは、アノード67と挟持片59Aとにより挟持される。基板Wがカソードユニット68に向かって移動すると、挟持片59Aがマスク78に当接し、この時点でアノード67の移動が停止する。 At this time, the sandwiching piece 59A of the carrier 21 in contact with the surface of the substrate W is displaced so as to be separated from the sandwiching piece 59B as the substrate W moves (the anode 67 moves). The substrate W is sandwiched between the anode 67 and the sandwiching piece 59A. When the substrate W moves toward the cathode unit 68, the clamping piece 59A comes into contact with the mask 78, and at this point, the movement of the anode 67 stops.
 このような状態で、カソードユニット68のシャワープレート75から基板Wに向けて成膜ガスが噴出され、マッチングボックス72を起動させることによってカソードユニット68のカソード中間部材76(シャワープレート75)に電圧が印加される。これによって、成膜空間81に成膜ガスのプラズマが発生し、基板Wの表面に膜が形成される。このとき、アノード67に内蔵されているヒータHにより処理前基板が所望の温度に加熱される。 In such a state, a film forming gas is ejected from the shower plate 75 of the cathode unit 68 toward the substrate W, and the matching box 72 is activated to apply a voltage to the cathode intermediate member 76 (shower plate 75) of the cathode unit 68. Applied. As a result, plasma of a film forming gas is generated in the film forming space 81, and a film is formed on the surface of the substrate W. At this time, the substrate before processing is heated to a desired temperature by the heater H built in the anode 67.
 続いて、成膜処理中及び成膜処理後に、カソードユニット68の周縁部に形成された排気口80を通じて成膜空間81のガス又は反応生成物(パウダー)が排気される。具体的に、成膜空間81内のガス又は反応生成物は、ガス流路Rと排気口80とを介して、カソードユニット68の周縁部の排気ダクト79に排気される。その後、ガス又は反応生成物は、カソードユニット68の下部における成膜室11内へ向いた排気ダクト79の開口部を通過する。更に、ガス又は反応生成物は、成膜室11の側面下部に設けられた排気管29から成膜室11の外部へと排気される。
 なお、基板W上に膜を形成する際に発生した反応生成物(パウダー)は、排気ダクト79の内壁面に付着・堆積し、回収及び処分される。
 成膜室11内の全ての電極ユニット31において、上述した処理と同じ処理が実行されるため、6枚の基板に対して同時に膜を形成することができる。
Subsequently, during the film forming process and after the film forming process, the gas or the reaction product (powder) in the film forming space 81 is exhausted through the exhaust port 80 formed in the peripheral portion of the cathode unit 68. Specifically, the gas or reaction product in the film formation space 81 is exhausted to the exhaust duct 79 at the peripheral edge of the cathode unit 68 via the gas flow path R and the exhaust port 80. Thereafter, the gas or reaction product passes through the opening of the exhaust duct 79 facing the inside of the film forming chamber 11 in the lower part of the cathode unit 68. Further, the gas or the reaction product is exhausted to the outside of the film forming chamber 11 from an exhaust pipe 29 provided at the lower side of the film forming chamber 11.
The reaction product (powder) generated when forming a film on the substrate W adheres to and accumulates on the inner wall surface of the exhaust duct 79 and is collected and disposed of.
Since all the electrode units 31 in the film forming chamber 11 perform the same process as described above, films can be formed simultaneously on six substrates.
 そして、成膜処理が終了したら、駆動機構71により2枚のアノード67が互いに離れる方向にアノード67を移動させ、処理後基板及びフレーム51(挟持片59A)を元の位置に戻す。更に、2枚のアノード67が互いに離れる方向にアノード67を移動させることで、処理後基板がアノード67から離れる。
 次に、図1に示すように、成膜室11のシャッタ25を開き、プッシュ-プル機構(不図示)を用いて、キャリア21を仕込・取出室13へ移動させる。
 このとき仕込・取出室13の内部は減圧されており、次に膜が形成される処理前基板が取り付けられたキャリア21が仕込・取出室13内に既に位置している。
 そして、仕込・取出室13において、処理後基板に蓄熱されている熱が処理前基板へ伝熱し、処理後基板の温度が下がる。
Then, when the film forming process is completed, the anode 67 is moved in the direction in which the two anodes 67 are separated from each other by the drive mechanism 71, and the processed substrate and the frame 51 (the sandwiching piece 59A) are returned to their original positions. Further, by moving the anode 67 in a direction in which the two anodes 67 are separated from each other, the substrate after processing is separated from the anode 67.
Next, as shown in FIG. 1, the shutter 25 of the film formation chamber 11 is opened, and the carrier 21 is moved to the preparation / removal chamber 13 using a push-pull mechanism (not shown).
At this time, the inside of the preparation / removal chamber 13 is depressurized, and the carrier 21 to which the pre-treatment substrate on which a film is to be formed next is attached is already located in the preparation / removal chamber 13.
Then, in the preparation / removal chamber 13, the heat stored in the processed substrate is transferred to the unprocessed substrate, and the temperature of the processed substrate is lowered.
 続いて、処理前基板が搭載されたキャリア21が成膜室11内へと移動した後、移動機構によって処理後基板が搭載されたキャリア21が移動レール37の位置に戻される。シャッタ25を閉じた後、シャッタ36を開き、処理後基板が搭載されたキャリア21は基板脱着室15へ移動される。
 基板脱着室15においては、基板脱着ロボット17は、処理後基板をキャリア21から取り外し、処理後基板を基板収容カセット19に搬送する。
 全ての処理後基板をキャリアから取り外す工程が完了した後、処理後基板が搭載されている基板収容カセット19は、次工程が行なわれる場所(装置)に移動し、成膜装置10における成膜処理が終了する。
Subsequently, after the carrier 21 on which the substrate before processing is moved moves into the film forming chamber 11, the carrier 21 on which the substrate after processing is mounted is returned to the position of the moving rail 37 by the moving mechanism. After the shutter 25 is closed, the shutter 36 is opened, and the carrier 21 on which the processed substrate is mounted is moved to the substrate removal chamber 15.
In the substrate removal chamber 15, the substrate removal robot 17 removes the processed substrate from the carrier 21 and transports the processed substrate to the substrate storage cassette 19.
After the process of removing all the processed substrates from the carrier is completed, the substrate storage cassette 19 on which the processed substrates are mounted is moved to a place (apparatus) where the next process is performed, and the film forming process in the film forming apparatus 10 is performed. Ends.
(電極ユニットのメンテナンス作業)
 次に、図3及び図4に基づいて、成膜装置10における電極ユニット31のメンテナンス作業の手順について説明する。
 この説明においては、1つの成膜室11に取り付けられている3基の電極ユニット31のうち、1基の電極ユニット31のメンテナンス作業の手順について説明し、他の電極ユニット31のメンテナンス作業の説明を省略する。他の電極ユニット31のメンテナンス作業は、以下に説明する手順で行われる。
(Electrode unit maintenance work)
Next, a procedure for maintenance work of the electrode unit 31 in the film forming apparatus 10 will be described with reference to FIGS.
In this description, the procedure of maintenance work for one electrode unit 31 among the three electrode units 31 attached to one film forming chamber 11 will be described, and the maintenance work for other electrode units 31 will be described. Is omitted. Maintenance work of the other electrode unit 31 is performed according to the procedure described below.
 図3及び図4に示すように、成膜室11内に取り付けられている電極ユニット31のカソードユニット68又はアノード67に膜が形成されたり、反応副生成物(パウダー)が付着したりすると、カソードユニット68又はアノード67の清掃又は交換等のメンテナンス作業を行う。
 メンテナンス作業を行うには、まず、電極ユニット31を引き出し方向(図3及び図4における矢印方向)に移動させる。
 このとき、電極ユニット31が連結部47を介して着脱用レール41の吊部43に支持されているので、この吊部43と台車60とを併用しながら着脱用レール41に沿って電極ユニット31を成膜室11から引き出す。
As shown in FIGS. 3 and 4, when a film is formed on the cathode unit 68 or the anode 67 of the electrode unit 31 attached in the film forming chamber 11 or a reaction by-product (powder) is attached, Maintenance work such as cleaning or replacement of the cathode unit 68 or the anode 67 is performed.
To perform the maintenance work, first, the electrode unit 31 is moved in the pulling direction (the arrow direction in FIGS. 3 and 4).
At this time, since the electrode unit 31 is supported by the hanging portion 43 of the attachment / detachment rail 41 via the connecting portion 47, the electrode unit 31 is moved along the attachment / detachment rail 41 while using the suspension portion 43 and the carriage 60 together. Is extracted from the film forming chamber 11.
 着脱用レール41の長さL1は、電極ユニット31を成膜室11から完全に引き出すことが可能な長さに設定されているので、カソードユニット68又はアノード67が成膜室11の外部に露出する。
 このため、アノード67をカソードユニット68に対して略90°開くことができる(図5参照)。成膜室11から分離された単体の電極ユニット31は、外気に曝された状態のまま、電極ユニット31の温度がメンテナンス作業が可能な温度に達するまで放置される。
 電極ユニット31が所望の温度まで下がると、アノード67を開き、互いに対向しているアノード67の面とカソードユニット68の面とを露出させる。
The length L1 of the detachable rail 41 is set to a length that allows the electrode unit 31 to be completely pulled out from the film forming chamber 11, so that the cathode unit 68 or the anode 67 is exposed to the outside of the film forming chamber 11. To do.
Therefore, the anode 67 can be opened by about 90 ° with respect to the cathode unit 68 (see FIG. 5). The single electrode unit 31 separated from the film forming chamber 11 is left in the state exposed to the outside air until the temperature of the electrode unit 31 reaches a temperature at which maintenance work can be performed.
When the electrode unit 31 is lowered to a desired temperature, the anode 67 is opened, and the surface of the anode 67 and the surface of the cathode unit 68 facing each other are exposed.
 ここで、成膜工程においては、マスク78と、カソードユニット68のシャワープレート75と、基板Wとにより成膜空間81が形成されている。即ち、アノード67に対向するカソードユニット68の面(シャワープレート75)又はカソードユニット68に対向するアノード67の面67A(図7参照)に膜が形成されたり、反応副生成物(パウダー)が付着している場合が多い。また、マスク78及びガス流路Rにおいても、膜又は反応副生成物(パウダー)が付着する。このため、アノード67を開くことで、各面を清掃する作業、シャワープレート75又はマスク78の交換作業等が容易に行える。そして、電極ユニット31の各部の清掃、または交換が終了すると、メンテナンス作業が終了する。 Here, in the film forming process, a film forming space 81 is formed by the mask 78, the shower plate 75 of the cathode unit 68, and the substrate W. That is, a film is formed on the surface of the cathode unit 68 facing the anode 67 (shower plate 75) or the surface 67A of the anode 67 facing the cathode unit 68 (see FIG. 7), or reaction by-products (powder) are adhered. There are many cases. Further, also in the mask 78 and the gas flow path R, a film or a reaction byproduct (powder) adheres. For this reason, by opening the anode 67, the operation of cleaning each surface, the replacement operation of the shower plate 75 or the mask 78, and the like can be easily performed. When the cleaning or replacement of each part of the electrode unit 31 is finished, the maintenance work is finished.
 また、電極ユニット31に設置されている排気ダクト79も上記のメンテナンス作業において同時に成膜室11から引き抜くことができる。
 このため、排気ダクト79に付着・堆積した反応副生成物(パウダー)も、容易にメンテナンス(クリーニング)することができる。1基の電極ユニット31のメンテナンス作業が終了した後、この電極ユニット31を再び成膜室11の開口部26に装着する。そして、別の電極ユニット31を成膜室11から引き出し、上記のようにメンテナンス作業が行われる。
 このように複数の電極ユニット31を順番に成膜室11から引き出すことにより、隣り合う電極ユニット31のアノード67が互いに干渉してしまうことを防ぐことができる。
Further, the exhaust duct 79 installed in the electrode unit 31 can also be pulled out from the film forming chamber 11 at the same time as the maintenance work.
For this reason, the reaction by-product (powder) adhering / depositing on the exhaust duct 79 can also be easily maintained (cleaned). After the maintenance work for one electrode unit 31 is completed, this electrode unit 31 is mounted again in the opening 26 of the film forming chamber 11. Then, another electrode unit 31 is pulled out from the film forming chamber 11, and the maintenance work is performed as described above.
Thus, by pulling out the plurality of electrode units 31 from the film forming chamber 11 in order, it is possible to prevent the anodes 67 of the adjacent electrode units 31 from interfering with each other.
 従って、上述の実施形態によれば、カソードユニット68とアノード67とを有する電極ユニット31を成膜室11から容易に分離させることができる。このため、電極ユニット31単体でメンテナンス作業を行うことができ、作業スペースを大きく確保することが可能になる。従って、メンテナンス作業に生じる作業負担を軽減することが可能になる。また、成膜室11の上面22に着脱用レール41が設けられ、着脱用レール41に吊部43及び連結部47を介して電極ユニット31が懸架されている。このため、例えば、成膜装置10の設置床面に凹凸がある場合であっても、電極ユニット31は着脱用レール41によってガイドされ、成膜室11から電極ユニット31を容易に引き出すことができる。従って、メンテナンス作業に生じる作業負担を軽減することが可能になる。 Therefore, according to the above-described embodiment, the electrode unit 31 having the cathode unit 68 and the anode 67 can be easily separated from the film forming chamber 11. For this reason, it is possible to perform maintenance work with the electrode unit 31 alone, and to secure a large work space. Therefore, it is possible to reduce the work load generated in the maintenance work. In addition, a detachable rail 41 is provided on the upper surface 22 of the film forming chamber 11, and the electrode unit 31 is suspended from the detachable rail 41 via a hanging portion 43 and a connecting portion 47. For this reason, for example, even when the installation floor surface of the film forming apparatus 10 is uneven, the electrode unit 31 is guided by the detachable rail 41, and the electrode unit 31 can be easily pulled out from the film forming chamber 11. . Therefore, it is possible to reduce the work load generated in the maintenance work.
 更に、成膜室11から引き出された電極ユニット31を着脱用レール41に沿って移動させるだけで電極ユニット31を容易に再装着することができる。このため、成膜室11から電極ユニット31が引き出される前における電極ユニット31の位置と、電極ユニット31を引き出した後に成膜室11に電極ユニット31が装着される位置が一致する再現性を高めることができると共に、電極ユニット31の位置決め作業を高い精度で行うことができる。
 そして、電極ユニット31の底板部62には、鉛直方向に沿って立ち上がる側板部63が設けられており、この側板部63が成膜室11の壁面の一部を構成している。このため、電極ユニット31の一部を成膜室11の一部とを兼ねることができ、成膜装置の構造が複雑化することを防止できると共に、部品点数を減少させることが可能になる。
Furthermore, the electrode unit 31 can be easily mounted again only by moving the electrode unit 31 drawn out from the film forming chamber 11 along the attachment / detachment rail 41. Therefore, the reproducibility that the position of the electrode unit 31 before the electrode unit 31 is pulled out from the film forming chamber 11 and the position where the electrode unit 31 is mounted in the film forming chamber 11 after the electrode unit 31 is pulled out is improved. In addition, the positioning operation of the electrode unit 31 can be performed with high accuracy.
The bottom plate portion 62 of the electrode unit 31 is provided with a side plate portion 63 that rises in the vertical direction, and this side plate portion 63 constitutes a part of the wall surface of the film forming chamber 11. For this reason, a part of the electrode unit 31 can also serve as a part of the film forming chamber 11, so that the structure of the film forming apparatus can be prevented from becoming complicated and the number of parts can be reduced.
 また、各着脱用レール41上にケーブルベア44が配置され、このケーブルベア44内にはケーブルKが収納されている。また、電極ユニット31には、ケーブルKの一端が接続されている。このため、電極ユニット31にケーブルKが接続された状態で成膜室11から電極ユニット31を取り外す作業と成膜室11に電極ユニット31を取り付ける作業とを行うことができる(着脱作業)。このため、メンテナンス作業に生じる作業負担をより軽減することが可能になる。
 更に、各着脱用レール41上にケーブルベア44が敷設されているので、カソードユニット68に成膜ガスを供給する配管としてフレキシブル配管を採用した場合、このフレキシブル配管をガイドプレート48に沿って配置し、ケーブルベア44内にこのフレキシブル配管を収納することも可能になる。このため、更にメンテナンス作業に生じる作業負担を軽減することができる。
A cable bearer 44 is disposed on each of the attachment / detachment rails 41, and a cable K is accommodated in the cable bearer 44. In addition, one end of a cable K is connected to the electrode unit 31. For this reason, the operation of removing the electrode unit 31 from the film forming chamber 11 and the operation of attaching the electrode unit 31 to the film forming chamber 11 can be performed with the cable K connected to the electrode unit 31 (detachment operation). For this reason, it becomes possible to further reduce the work load generated in the maintenance work.
Further, since the cable bearer 44 is laid on each of the attachment / detachment rails 41, when a flexible pipe is adopted as a pipe for supplying the film forming gas to the cathode unit 68, the flexible pipe is arranged along the guide plate 48. The flexible piping can be stored in the cable bear 44. For this reason, the work load which arises in a maintenance work can be further reduced.
 また、例えば、着脱用レール41の先端に立設されているレール支持部材42の支持部42Bにマッチングボックス72(図3に2点鎖線で示す)を設け、このマッチングボックス72を3基の電極ユニット31において共通で使用される構成が採用されてもよい。このため、部品点数を減少させることができ、成膜装置10の製造コストを低減することができる。 Further, for example, a matching box 72 (indicated by a two-dot chain line in FIG. 3) is provided on the support portion 42B of the rail support member 42 erected at the tip of the detachable rail 41, and the matching box 72 is provided with three electrodes. A configuration commonly used in the unit 31 may be adopted. For this reason, the number of parts can be reduced, and the manufacturing cost of the film forming apparatus 10 can be reduced.
 更に、着脱用レール41の長さL1が電極ユニット31を成膜室11から完全に引き出すことが可能な長さに設定されているので、即ち、長さL1は、電極ユニット31を成膜室11の外部に露出するように電極ユニット11が移動する距離に応じて決定されている。このため、カソードユニット68又はアノード67を成膜室11の外部に完全に露出させることができる。このように、単体の電極ユニット31をメンテナンスための作業スペースを確実に確保することができる。 Furthermore, since the length L1 of the detachable rail 41 is set to a length that allows the electrode unit 31 to be completely pulled out from the film forming chamber 11, that is, the length L1 is the length of the electrode unit 31 in the film forming chamber. 11 is determined according to the distance that the electrode unit 11 moves so as to be exposed to the outside. For this reason, the cathode unit 68 or the anode 67 can be completely exposed to the outside of the film forming chamber 11. Thus, a work space for maintaining the single electrode unit 31 can be ensured.
 また、電極ユニット31には台車60が設けられており、電極ユニット31は、床面上を移動することができる。そして、成膜室11から電極ユニット31を着脱させる際、着脱用レール41の吊部43と台車60とを併用しながら着脱用レール41に沿って電極ユニット31を着脱させることができる。このため、電極ユニットの重量の増加に伴う着脱用レール41の損傷を防止することができる。また、着脱用レール41の剛性を必要以上に高める必要がなく、着脱用レールの大型化を防止することができる。 Further, the electrode unit 31 is provided with a carriage 60, and the electrode unit 31 can move on the floor surface. And when attaching / detaching the electrode unit 31 from the film forming chamber 11, the electrode unit 31 can be attached / detached along the attaching / detaching rail 41 while using the hanging portion 43 of the attaching / detaching rail 41 and the carriage 60 together. For this reason, it is possible to prevent the attachment / detachment rail 41 from being damaged due to an increase in the weight of the electrode unit. Moreover, it is not necessary to increase the rigidity of the detachable rail 41 more than necessary, and the detachable rail can be prevented from being enlarged.
 なお、本発明の技術範囲は、上記実施形態に限定されることなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
 例えば、上記実施形態においては、電極ユニット31が懸架される着脱用レール41として、I形鋼を用いた場合について説明したが、本発明は、この材料又は構造を限定しない。着脱用レール41としては、電極ユニット31が懸架できる構造が採用される。
 更に、上述の実施形態においては、着脱用レール41の先端を支持するレール支持部材42が、渡り部42Aと、渡り部42Aの両端を支持する支持部42B,42Bとによって構成された場合について説明した。
 しかしながら、本発明は、この構造を限定しておらず、着脱用レール41を支持可能な構造であれば、他の構造が採用されてもよい。
The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the said embodiment, although the case where I-shaped steel was used as the rail 41 for attachment / detachment on which the electrode unit 31 is suspended was demonstrated, this invention does not limit this material or structure. As the detachable rail 41, a structure in which the electrode unit 31 can be suspended is employed.
Furthermore, in the above-mentioned embodiment, the case where the rail support member 42 that supports the tip of the mounting / dismounting rail 41 is configured by the crossover portion 42A and the support portions 42B and 42B that support both ends of the crossover portion 42A will be described. did.
However, the present invention is not limited to this structure, and other structures may be adopted as long as the structure can support the detachable rail 41.
 本発明は、薄膜太陽電池の製造に用いられる成膜装置に適用可能である。 The present invention can be applied to a film forming apparatus used for manufacturing a thin film solar cell.
 10…成膜装置 11…成膜室 22…上部 31…電極ユニット 41…着脱用レール 42…レール支持部材 43…吊部 44…ケーブルベア 46…支持部 60…台車 63…側板部 67…アノード 68…カソードユニット 75…シャワープレート(カソード) 81…成膜空間 W…基板。 DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus 11 ... Film-forming chamber 22 ... Upper part 31 ... Electrode unit 41 ... Detachable rail 42 ... Rail support member 43 ... Suspension part 44 ... Cable bearer 46 ... Support part 60 ... Cart 63 ... Side plate part 67 ... Anode 68 ... Cathode unit 75 ... Shower plate (cathode) 81 ... Deposition space W ... Substrate.

Claims (5)

  1.  成膜装置であって、
     重力方向において上部を有し、基板の被成膜面が重力方向と並行となるように前記基板が配置される成膜室と、
     電圧が印加される平板状のカソードと、前記カソードに離間して対向配置されたアノードとを有し、前記成膜室に着脱可能に設けられた電極ユニットと、
     前記成膜室の前記上部に設けられ、前記成膜室から前記電極ユニットが引き出される方向に沿って設けられ、前記電極ユニットをガイドする着脱用レールと、
     を含むことを特徴とする成膜装置。
    A film forming apparatus,
    A film forming chamber having an upper part in the direction of gravity and in which the substrate is disposed so that a film forming surface of the substrate is parallel to the direction of gravity;
    An electrode unit having a flat cathode to which a voltage is applied and an anode disposed opposite to the cathode so as to be detachably provided in the film formation chamber;
    A detachable rail provided in the upper part of the film forming chamber, provided along a direction in which the electrode unit is pulled out from the film forming chamber, and guiding the electrode unit;
    A film forming apparatus comprising:
  2.  請求項1に記載の成膜装置であって、
     前記電極ユニットは、
     前記成膜室の一つの面を構成し、前記カソード及び前記アノードが前記電極ユニットに取り付けられた状態で前記成膜室から分離可能である側板部を有する
     ことを特徴とする成膜装置。
    The film forming apparatus according to claim 1,
    The electrode unit is
    A film forming apparatus comprising a side plate portion that constitutes one surface of the film forming chamber and is separable from the film forming chamber in a state where the cathode and the anode are attached to the electrode unit.
  3.  請求項1又は請求項2に記載の成膜装置であって、
     前記着脱用レール上に配置され、前記電極ユニットに接続されるケーブルが配置されているケーブルベアを含む
     ことを特徴とする成膜装置。
    The film forming apparatus according to claim 1 or 2,
    A film forming apparatus comprising: a cable bear disposed on the detachable rail and disposed with a cable connected to the electrode unit.
  4.  請求項1又は請求項2に記載の成膜装置であって、
     前記着脱用レールの長さは、少なくとも前記カソード及び前記アノードの全体を前記成膜室の外部に露出するように前記電極ユニットが移動する距離に応じて決定されている
     ことを特徴とする成膜装置。
    The film forming apparatus according to claim 1 or 2,
    The length of the detachable rail is determined according to the distance that the electrode unit moves so that at least the whole of the cathode and the anode are exposed to the outside of the film forming chamber. apparatus.
  5.  請求項1又は請求項2に記載の成膜装置であって、
     前記電極ユニットは、台車を有する
     ことを特徴とする成膜装置。
    The film forming apparatus according to claim 1 or 2,
    The electrode unit includes a carriage.
PCT/JP2010/062687 2009-07-31 2010-07-28 Film-forming apparatus WO2011013697A1 (en)

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US11199787B2 (en) 2020-03-18 2021-12-14 Xerox Corporation Fluorescent metallic toners and related methods
US11209741B2 (en) 2020-03-18 2021-12-28 Xerox Corporation Fluorescent green toners with enhanced brightness

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Publication number Priority date Publication date Assignee Title
US11199787B2 (en) 2020-03-18 2021-12-14 Xerox Corporation Fluorescent metallic toners and related methods
US11209741B2 (en) 2020-03-18 2021-12-28 Xerox Corporation Fluorescent green toners with enhanced brightness

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