WO2011010879A3 - Method for fabricating an array substrate for a liquid crystal display device - Google Patents

Method for fabricating an array substrate for a liquid crystal display device Download PDF

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Publication number
WO2011010879A3
WO2011010879A3 PCT/KR2010/004815 KR2010004815W WO2011010879A3 WO 2011010879 A3 WO2011010879 A3 WO 2011010879A3 KR 2010004815 W KR2010004815 W KR 2010004815W WO 2011010879 A3 WO2011010879 A3 WO 2011010879A3
Authority
WO
WIPO (PCT)
Prior art keywords
fabricating
liquid crystal
display device
crystal display
array substrate
Prior art date
Application number
PCT/KR2010/004815
Other languages
French (fr)
Korean (ko)
Other versions
WO2011010879A2 (en
Inventor
최용석
이석
윤영진
이현규
이우람
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090067530A external-priority patent/KR101608088B1/en
Priority claimed from KR1020090067531A external-priority patent/KR101608089B1/en
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN201080033378.1A priority Critical patent/CN102472938B/en
Publication of WO2011010879A2 publication Critical patent/WO2011010879A2/en
Publication of WO2011010879A3 publication Critical patent/WO2011010879A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)

Abstract

The present invention relates to a method for fabricating an array substrate for a liquid crystal display device, using an etchant composition for a copper-based metal film, wherein the etchant composition comprises, based on the total weight of the etchant composition: a) 2 to 30 wt % of hydrogen peroxide (H2O2); b) 0.1 to 5 wt % of nitric acid (HNO3); c) 0.01 to 1.0 wt % of a fluorine compound; d) 0.1 to 5 wt % of an azole compound; e) 0.1 to 8.0 wt % of an imidazole compound; and f) the remainder being water.
PCT/KR2010/004815 2009-07-23 2010-07-22 Method for fabricating an array substrate for a liquid crystal display device WO2011010879A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080033378.1A CN102472938B (en) 2009-07-23 2010-07-22 The manufacture method of array substrate for liquid crystal display device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090067530A KR101608088B1 (en) 2009-07-23 2009-07-23 Method for fabricating array substrate for a liquid crystal display device
KR1020090067531A KR101608089B1 (en) 2009-07-23 2009-07-23 Method for fabricating array substrate for a liquid crystal display device
KR10-2009-0067530 2009-07-23
KR10-2009-0067531 2009-07-23

Publications (2)

Publication Number Publication Date
WO2011010879A2 WO2011010879A2 (en) 2011-01-27
WO2011010879A3 true WO2011010879A3 (en) 2011-04-21

Family

ID=43499550

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004815 WO2011010879A2 (en) 2009-07-23 2010-07-22 Method for fabricating an array substrate for a liquid crystal display device

Country Status (3)

Country Link
CN (1) CN102472938B (en)
TW (1) TWI512832B (en)
WO (1) WO2011010879A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629591B (en) * 2012-02-28 2015-10-21 京东方科技集团股份有限公司 A kind of manufacture method of array base palte and array base palte, display
KR101400953B1 (en) * 2012-09-04 2014-07-01 주식회사 이엔에프테크놀로지 Etching composition for copper and molibdenum alloy
TWI640655B (en) * 2013-12-23 2018-11-11 韓商東友精細化工有限公司 Method of preparing array of thin film transistor and etchant composition for molybdenum-based metal film/metal oxide film
KR102323942B1 (en) * 2015-01-22 2021-11-09 동우 화인켐 주식회사 Etching solution composition for indium oxide layer and method for etching copper-based metal layer using the same
CN105986270B (en) * 2015-03-19 2019-08-16 东友精细化工有限公司 Etching agent composite, LCD (Liquid Crystal Display) array substrate production method and array substrate
KR102400343B1 (en) * 2016-07-19 2022-05-23 동우 화인켐 주식회사 Metal film etchant composition and manufacturing method of an array substrate for display device
KR20180060489A (en) 2016-11-29 2018-06-07 삼성전자주식회사 Etching composition and method for fabricating semiconductor device by using the same
KR20190027019A (en) * 2017-09-04 2019-03-14 삼성디스플레이 주식회사 Etchant and fabrication method of metal pattern and thin film transistor substrate using the same
CN114164003A (en) * 2021-12-06 2022-03-11 Tcl华星光电技术有限公司 Etchant composition for display panel and etching method of display panel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980026265A (en) * 1996-10-08 1998-07-15 김광호 Etch Liquid Composition for Semiconductor Wafer Regeneration
KR20050000682A (en) * 2003-06-24 2005-01-06 엘지.필립스 엘시디 주식회사 An etchant to etching a double layer with Cu(or Cu-alloy)
KR20050067934A (en) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 Method for forming metal line and method for manufacturing liquid crystal display device using the same
KR20070001530A (en) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 Etchant and method for fabricating of electrode and signal line using the one
KR20100123131A (en) * 2009-05-14 2010-11-24 삼성전자주식회사 Etchant and method of array substrate using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4497687A (en) * 1983-07-28 1985-02-05 Psi Star, Inc. Aqueous process for etching cooper and other metals
JP2781954B2 (en) * 1994-03-04 1998-07-30 メック株式会社 Copper and copper alloy surface treatment agent
KR200143085Y1 (en) * 1996-11-08 1999-06-01 김중형 Nut
KR100505328B1 (en) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 ETCHING SOLUTIONS AND METHOD TO REMOVE MOLYBDENUM RESIDUE FOR Cu MOLYBDENUM MULTILAYERS
KR101199533B1 (en) * 2005-06-22 2012-11-09 삼성디스플레이 주식회사 Echant and method for fabricating interconnection line and method for fabricating thin film transistor substrate using the same
JP2008133529A (en) * 2006-08-29 2008-06-12 Rohm & Haas Electronic Materials Llc Stripping method
KR101310310B1 (en) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 Etchant for thin film transistor-liquid crystal displays
KR101391074B1 (en) * 2007-08-07 2014-05-02 동우 화인켐 주식회사 Manufacturing method of array substrate for liquid crystal display

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980026265A (en) * 1996-10-08 1998-07-15 김광호 Etch Liquid Composition for Semiconductor Wafer Regeneration
KR20050000682A (en) * 2003-06-24 2005-01-06 엘지.필립스 엘시디 주식회사 An etchant to etching a double layer with Cu(or Cu-alloy)
KR20050067934A (en) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 Method for forming metal line and method for manufacturing liquid crystal display device using the same
KR20070001530A (en) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 Etchant and method for fabricating of electrode and signal line using the one
KR20100123131A (en) * 2009-05-14 2010-11-24 삼성전자주식회사 Etchant and method of array substrate using the same

Also Published As

Publication number Publication date
TWI512832B (en) 2015-12-11
CN102472938A (en) 2012-05-23
CN102472938B (en) 2016-03-30
TW201115650A (en) 2011-05-01
WO2011010879A2 (en) 2011-01-27

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