WO2011010236A1 - Reflective contact for a semiconductor light emitting device - Google Patents
Reflective contact for a semiconductor light emitting device Download PDFInfo
- Publication number
- WO2011010236A1 WO2011010236A1 PCT/IB2010/052894 IB2010052894W WO2011010236A1 WO 2011010236 A1 WO2011010236 A1 WO 2011010236A1 IB 2010052894 W IB2010052894 W IB 2010052894W WO 2011010236 A1 WO2011010236 A1 WO 2011010236A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type region
- light emitting
- reflective
- silver
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 46
- 229910052709 silver Inorganic materials 0.000 claims description 31
- 239000004332 silver Substances 0.000 claims description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000013508 migration Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 230000005012 migration Effects 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910017150 AlTi Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000009791 electrochemical migration reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- -1 Ill-nitride Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10734315.4A EP2457266B1 (en) | 2009-07-21 | 2010-06-24 | Semiconductor light emitting device with reflective contact and method of manufacturing the same |
KR1020127004369A KR101713187B1 (en) | 2009-07-21 | 2010-06-24 | Reflective contact for a semiconductor light emitting device |
KR1020177005769A KR20170026666A (en) | 2009-07-21 | 2010-06-24 | Reflective contact for a semiconductor light emitting device |
KR1020187013623A KR101991961B1 (en) | 2009-07-21 | 2010-06-24 | Reflective contact for a semiconductor light emitting device |
JP2012521124A JP2012533903A (en) | 2009-07-21 | 2010-06-24 | Reflective contacts for semiconductor light emitting devices |
CN201080032980.3A CN102473807B (en) | 2009-07-21 | 2010-06-24 | Semiconductor light emiting device and method for forming semiconductor light emiting device |
RU2012105987/28A RU2535636C2 (en) | 2009-07-21 | 2010-06-24 | Reflecting contact for semiconductor light-emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/506,632 | 2009-07-21 | ||
US12/506,632 US8076682B2 (en) | 2009-07-21 | 2009-07-21 | Contact for a semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011010236A1 true WO2011010236A1 (en) | 2011-01-27 |
Family
ID=42799753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2010/052894 WO2011010236A1 (en) | 2009-07-21 | 2010-06-24 | Reflective contact for a semiconductor light emitting device |
Country Status (8)
Country | Link |
---|---|
US (2) | US8076682B2 (en) |
EP (1) | EP2457266B1 (en) |
JP (1) | JP2012533903A (en) |
KR (3) | KR20170026666A (en) |
CN (1) | CN102473807B (en) |
RU (1) | RU2535636C2 (en) |
TW (2) | TWI583023B (en) |
WO (1) | WO2011010236A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2710005C1 (en) * | 2019-04-26 | 2019-12-23 | Акционерное общество "ОКБ-Планета" АО "ОКБ-Планета" | Method of mounting semiconductor chips in a housing |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011112000B4 (en) * | 2011-08-31 | 2023-11-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED chip |
CN102903817B (en) * | 2012-10-31 | 2015-04-22 | 安徽三安光电有限公司 | Light emitting device with reflecting electrode |
TWI497767B (en) * | 2013-03-08 | 2015-08-21 | Univ Southern Taiwan Sci & Tec | Electrode of group iii-v light emitting diode |
EP2876035A1 (en) | 2013-11-21 | 2015-05-27 | Reflex Marine Ltd | Device for transferring persons |
Citations (9)
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JPS5568655A (en) * | 1978-11-20 | 1980-05-23 | Fujitsu Ltd | Manufacturing method of wiring |
US4564997A (en) * | 1981-04-21 | 1986-01-21 | Nippon-Telegraph And Telephone Public Corporation | Semiconductor device and manufacturing process thereof |
EP1168460A2 (en) * | 2000-06-30 | 2002-01-02 | Kabushiki Kaisha Toshiba | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
US6946685B1 (en) | 2000-08-31 | 2005-09-20 | Lumileds Lighting U.S., Llc | Light emitting semiconductor method and device |
US20060060872A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High output group III nitride light emitting diodes |
US20060060874A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High efficiency group III nitride LED with lenticular surface |
US20060255358A1 (en) * | 2006-05-19 | 2006-11-16 | Shum Frank T | Electrode structures for LEDs with increased active area |
EP1793429A1 (en) * | 2005-12-01 | 2007-06-06 | Sony Corporation | Semiconductor light emitting device having a reflection layer comprising silver |
WO2009039820A1 (en) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Thin-film led having a mirror layer and method for the production thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1928034A3 (en) * | 1997-12-15 | 2008-06-18 | Philips Lumileds Lighting Company LLC | Light emitting device |
KR100558890B1 (en) * | 2001-07-12 | 2006-03-14 | 니치아 카가쿠 고교 가부시키가이샤 | Semiconductor device |
RU2286618C2 (en) * | 2002-07-16 | 2006-10-27 | Борис Анатольевич Матвеев | Semiconductor diode for ir spectral range |
US8318519B2 (en) * | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
WO2007049939A1 (en) * | 2005-10-29 | 2007-05-03 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
JP4946195B2 (en) * | 2006-06-19 | 2012-06-06 | サンケン電気株式会社 | Semiconductor light emitting device and manufacturing method thereof |
JP2008192782A (en) * | 2007-02-05 | 2008-08-21 | Toyota Central R&D Labs Inc | Electrode and iii nitride compound semiconductor light-emitting element using the electrode |
JP4367531B2 (en) * | 2007-06-06 | 2009-11-18 | ソニー株式会社 | Method for forming electrode structure in light emitting element, and method for forming laminated structure |
JP2009049267A (en) * | 2007-08-22 | 2009-03-05 | Toshiba Corp | Semiconductor light-emitting device and method of manufacturing the same |
JP5325506B2 (en) * | 2008-09-03 | 2013-10-23 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
-
2009
- 2009-07-21 US US12/506,632 patent/US8076682B2/en active Active
-
2010
- 2010-06-24 RU RU2012105987/28A patent/RU2535636C2/en active
- 2010-06-24 CN CN201080032980.3A patent/CN102473807B/en active Active
- 2010-06-24 EP EP10734315.4A patent/EP2457266B1/en active Active
- 2010-06-24 KR KR1020177005769A patent/KR20170026666A/en active Application Filing
- 2010-06-24 JP JP2012521124A patent/JP2012533903A/en active Pending
- 2010-06-24 KR KR1020127004369A patent/KR101713187B1/en active IP Right Grant
- 2010-06-24 WO PCT/IB2010/052894 patent/WO2011010236A1/en active Application Filing
- 2010-06-24 KR KR1020187013623A patent/KR101991961B1/en active IP Right Grant
- 2010-07-16 TW TW099123564A patent/TWI583023B/en active
- 2010-07-16 TW TW105135131A patent/TWI625870B/en active
-
2011
- 2011-11-03 US US13/288,062 patent/US8257989B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5568655A (en) * | 1978-11-20 | 1980-05-23 | Fujitsu Ltd | Manufacturing method of wiring |
US4564997A (en) * | 1981-04-21 | 1986-01-21 | Nippon-Telegraph And Telephone Public Corporation | Semiconductor device and manufacturing process thereof |
EP1168460A2 (en) * | 2000-06-30 | 2002-01-02 | Kabushiki Kaisha Toshiba | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
US6946685B1 (en) | 2000-08-31 | 2005-09-20 | Lumileds Lighting U.S., Llc | Light emitting semiconductor method and device |
US20060060872A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High output group III nitride light emitting diodes |
US20060060874A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High efficiency group III nitride LED with lenticular surface |
EP1793429A1 (en) * | 2005-12-01 | 2007-06-06 | Sony Corporation | Semiconductor light emitting device having a reflection layer comprising silver |
US20060255358A1 (en) * | 2006-05-19 | 2006-11-16 | Shum Frank T | Electrode structures for LEDs with increased active area |
WO2009039820A1 (en) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Thin-film led having a mirror layer and method for the production thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2710005C1 (en) * | 2019-04-26 | 2019-12-23 | Акционерное общество "ОКБ-Планета" АО "ОКБ-Планета" | Method of mounting semiconductor chips in a housing |
Also Published As
Publication number | Publication date |
---|---|
RU2535636C2 (en) | 2014-12-20 |
KR20170026666A (en) | 2017-03-08 |
KR101713187B1 (en) | 2017-03-07 |
KR20120049282A (en) | 2012-05-16 |
TWI583023B (en) | 2017-05-11 |
US8257989B2 (en) | 2012-09-04 |
US20110018015A1 (en) | 2011-01-27 |
TWI625870B (en) | 2018-06-01 |
TW201123541A (en) | 2011-07-01 |
CN102473807B (en) | 2015-05-20 |
KR101991961B1 (en) | 2019-06-25 |
JP2012533903A (en) | 2012-12-27 |
KR20180053435A (en) | 2018-05-21 |
EP2457266A1 (en) | 2012-05-30 |
US8076682B2 (en) | 2011-12-13 |
TW201707238A (en) | 2017-02-16 |
US20120045858A1 (en) | 2012-02-23 |
EP2457266B1 (en) | 2018-12-12 |
RU2012105987A (en) | 2013-08-27 |
CN102473807A (en) | 2012-05-23 |
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