WO2011000687A1 - Structure de convertisseur à plusieurs étages pour l'alimentation en énergie électrique - Google Patents

Structure de convertisseur à plusieurs étages pour l'alimentation en énergie électrique Download PDF

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Publication number
WO2011000687A1
WO2011000687A1 PCT/EP2010/058362 EP2010058362W WO2011000687A1 WO 2011000687 A1 WO2011000687 A1 WO 2011000687A1 EP 2010058362 W EP2010058362 W EP 2010058362W WO 2011000687 A1 WO2011000687 A1 WO 2011000687A1
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WO
WIPO (PCT)
Prior art keywords
row
submodules
submodule
voltage
rows
Prior art date
Application number
PCT/EP2010/058362
Other languages
German (de)
English (en)
Inventor
Jörg DORN
Thomas KÜBEL
Thomas Westerweller
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2011000687A1 publication Critical patent/WO2011000687A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/112—Mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a converter for the conversion of an electrical variable such as voltage or current in the field of electric power transmission and distribution with a series circuit of bipolar submodules, each having a power semiconductor circuit and an energy storage, and with a support frame for the isolated holding the submodules, so in that the submodules are arranged side by side in at least two rows stacked one above the other, wherein a diagram is provided for the electrical connection of the submodules.
  • DE 101 03 031 describes a multi- stage converter which consists of a series connection of bipolar submodules.
  • Each submodule has an energy storage and a power semiconductor circuit, each consisting of two power semiconductors.
  • the two power semiconductors can be controlled such that either the voltage dropping across the energy store of the respective submodule or else a zero voltage can be generated at the two output terminals of the respective submodule.
  • the series connection of the submodules forms one of the
  • Converter valves of the inverter Each drop across the current Rich ⁇ terventilen voltage can be set stepwise by means of the submodules, the height of the voltage levels, the voltage dropped across the capacitor of a submodule voltage.
  • a converter In the area of energy transmission and power distribution, such a converter is designed for voltages of several hundred kilovolts. From the- For this reason, such a multi-stage inverter can therefore have several hundred of such submodules.
  • the support frame 1 has a support frame 2, shown only schematically, made of an insulating material.
  • the support frame 2 via support columns forming support 3.
  • the submodules 4 are arranged side by side in the support frame, with rows 5, 6 and 7 are formed, which are stacked one above the other.
  • the different rows 5, 6 and 7 are spaced apart from one another by the support beams 3, the bipolar submodules 4 being electrically connected to one another via a busbar 8.
  • the voltage dropped across a submodule is, for example, 1 kV.
  • a voltage of, for example, 200 kV is applied to the submodule 5i arranged at the top end in FIG. 1 in the top row 5, the voltage at the left submodule of the same row 524 has dropped to 176 kV. This simultaneously corresponds to the input voltage of the submodule 624.
  • the voltage at the submodule 6 1 is then 152 kV.
  • the distance, al ⁇ so the height of the support beam 3, is to be chosen so large that a sufficiently high dielectric strength between the superimposed rows 5 and 6 is given. It is assumed that a voltage difference of 48 kV.
  • the object of the invention is to provide a converter of the type mentioned, which is as compact and therefore inexpensive, at the same time a sufficient dielectric strength is provided.
  • the invention achieves this object by virtue of a submodule 524 arranged on the first outermost edge of a first row being connected to a submodule 6i of a second row 6 aligned above or below the first row and facing away from the first edge of the first row 5 second outermost edge of the second row 6 is arranged.
  • the submodules are Z-shaped strigient.
  • the outermost submodule of a row is therefore not connected, as in the prior art, to the first submodule of the same side of the second row lying vertically above or below the first row.
  • the submodule arranged in a row on the left-hand side for example, is connected to the submodule of the underlying row on the right-hand side, the two rows, in which the submodules connected to one another are arranged, extending perpendicularly one above the other, ie being aligned with one another. In this way, the falling voltage between the rows is reduced.
  • the holding frame can therefore be made more compact. This also has an advantageous effect on the height of the entire system.
  • the sub-modules are held in the support ⁇ scaffolding course isolated.
  • the each other Shunted submodules form a phase module which can be connected to only one phase of an AC voltage network.
  • corresponding submodules are provided with R-shaped interconnection.
  • the number of submodules of a plane is greater than 24.
  • the number of planes is advantageously greater than 2.
  • the rows of side by side angeord ⁇ Neten submodules are spaced apart by electrically insulating support beams.
  • Electric support beams are usually provided with ribs, so that an increased Kriechfestig ⁇ speed is provided. In this way, the withstand voltage between the rows is further increased.
  • FIG. 1 shows a phase module of an inverter according to FIG.
  • FIG. 2 shows an exemplary embodiment of a phase module of the converter 9 according to the invention, which has a support frame 2 made of insulating material.
  • the support frame 2 again has support columns 3 serving as support columns, which separate rows 5, 6 and 7 from side by side arranged bipolar submodules 4.
  • each submodule has an energy store, such as a capacitor, as well as a power semiconductor circuit connected to the capacitor, so that either the voltage drop across the capacitor is applied to the capacitor
  • FIG. 2 shows, as in FIG. 1, only one phase module of an inverter 1, which, however, consists of a total of three phase modules which, for example, are arranged behind the phase module shown in the figures and thus concealed.
  • the Phasenmo ⁇ modules are constructed identically and each have a AC voltage connection for a phase of the connected AC voltage network.
  • each Pha ⁇ senmodul has two differently polarized DC voltage connections.
  • the electrical connection of the vertically superposed rows of a phase module is shown.
  • the input voltage at the submodule 5i is 200 kV.
  • the output ⁇ voltage of the submodule 524 is then 176 kV.
  • submodule 524 is connected to submodule 61.
  • a submodule arranged at the first end of a first row 5 is connected to the submodule of the vertically lower second row of a second row.
  • Between the rows 5 and 6 or 6 and 7 respectively only a voltage difference of 24 kV maxi ⁇ times drops.

Abstract

L'invention concerne un convertisseur (9), destiné à convertir une grandeur électrique telle que la tension ou le courant dans le domaine du transport et de la distribution de l'énergie électrique, qui présente un montage en série de sous-modules bipolaires (4), qui possèdent chacun un circuit semi-conducteur de puissance et un accumulateur d'énergie, et une structure porteuse (2) destinée à supporter les sous-modules de manière qu'ils soient isolés et juxtaposés en au moins deux rangées superposées (5, 6, 7). Il est prévu un rail (8) de liaison électrique entre les sous-modules (4). Afin de fournir un convertisseur aussi compact et aussi économique que possible tout en assurant une résistance suffisante à la tension, il est proposé qu'un sous-module (524) disposé sur le bord extérieur d'une première rangée (5) soit relié à un sous-module (61) de la deuxième rangée disposée au-dessus ou au-dessous, ce dernier étant disposé sur un deuxième bord extérieur de la deuxième rangée (6) opposé au premier bord de la première rangée (5).
PCT/EP2010/058362 2009-06-30 2010-06-15 Structure de convertisseur à plusieurs étages pour l'alimentation en énergie électrique WO2011000687A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009031574A DE102009031574A1 (de) 2009-06-30 2009-06-30 Aufbau eines mehrstufigen Umrichters der Elektroenergieversorgung
DE102009031574.8 2009-06-30

Publications (1)

Publication Number Publication Date
WO2011000687A1 true WO2011000687A1 (fr) 2011-01-06

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PCT/EP2010/058362 WO2011000687A1 (fr) 2009-06-30 2010-06-15 Structure de convertisseur à plusieurs étages pour l'alimentation en énergie électrique

Country Status (2)

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DE (1) DE102009031574A1 (fr)
WO (1) WO2011000687A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021031730A1 (fr) * 2019-08-16 2021-02-25 南京南瑞继保工程技术有限公司 Couche de soupape d'une soupape de convertisseur et soupape de convertisseur

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10389268B2 (en) * 2015-04-06 2019-08-20 Mitsubishi Electric Corporation AC-DC power conversion device including helically cascaded unit cells
EP3439162B1 (fr) * 2016-03-28 2021-11-17 Mitsubishi Electric Corporation Dispositif de conversion de puissance
WO2019030859A1 (fr) * 2017-08-09 2019-02-14 三菱電機株式会社 Dispositif de conversion de puissance
CN108880201B (zh) * 2018-09-14 2023-12-22 西门子（上海）电气传动设备有限公司 高压变频器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2316327A1 (de) * 1973-04-02 1974-10-17 Hitachi Ltd Oel-thyristor-gleichrichter
US4090233A (en) * 1975-08-25 1978-05-16 Siemens Aktiengesellschaft Spatial arrangement of the valves of a three-pulse converter system
DE10103031A1 (de) * 2001-01-24 2002-07-25 Rainer Marquardt Stromrichterschaltungen mit verteilten Energiespeichern

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642275A (en) 1995-09-14 1997-06-24 Lockheed Martin Energy System, Inc. Multilevel cascade voltage source inverter with seperate DC sources
DE102005045957A1 (de) * 2005-09-26 2006-11-16 Siemens Ag Verfahren und Vorrichtung zur Übertragung von Signalen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2316327A1 (de) * 1973-04-02 1974-10-17 Hitachi Ltd Oel-thyristor-gleichrichter
US4090233A (en) * 1975-08-25 1978-05-16 Siemens Aktiengesellschaft Spatial arrangement of the valves of a three-pulse converter system
DE10103031A1 (de) * 2001-01-24 2002-07-25 Rainer Marquardt Stromrichterschaltungen mit verteilten Energiespeichern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021031730A1 (fr) * 2019-08-16 2021-02-25 南京南瑞继保工程技术有限公司 Couche de soupape d'une soupape de convertisseur et soupape de convertisseur

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