WO2010151012A3 - Thermoelectric conversion device and method for manufacturing same - Google Patents

Thermoelectric conversion device and method for manufacturing same Download PDF

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Publication number
WO2010151012A3
WO2010151012A3 PCT/KR2010/003968 KR2010003968W WO2010151012A3 WO 2010151012 A3 WO2010151012 A3 WO 2010151012A3 KR 2010003968 W KR2010003968 W KR 2010003968W WO 2010151012 A3 WO2010151012 A3 WO 2010151012A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermoelectric conversion
conversion layer
conversion device
semiconductor
type
Prior art date
Application number
PCT/KR2010/003968
Other languages
French (fr)
Korean (ko)
Other versions
WO2010151012A2 (en
Inventor
마사유키 아베
Original Assignee
(주)아이뷰테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)아이뷰테크 filed Critical (주)아이뷰테크
Publication of WO2010151012A2 publication Critical patent/WO2010151012A2/en
Publication of WO2010151012A3 publication Critical patent/WO2010151012A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions

Abstract

The present invention relates to a thermoelectric conversion device and to a method for manufacturing same. The thermoelectric conversion device comprises: a semiconductor having a heterostructure consisting of hetero semiconductors; at least one of a p-type thermoelectric conversion layer formed by a p-type semiconductor of said semiconductor with the heterostructure and an n-type thermoelectric conversion layer formed by an n-type semiconductor of said semiconductor with the heterostructure; and electrodes installed at both ends of said at least one of the p-type thermoelectric conversion layer and the n-type thermoelectric conversion layer to draw thermoelectromotive force. An electrically insulating layer is formed between the p-type thermoelectric conversion layer and the n-type thermoelectric conversion layer to form an electrically separated structure. A heat-absorbing conductor is arranged in the area in which the electrically insulating layer, the electrodes, and the thermoelectric conversion layer are perpendicularly (vertically) overlapped, to provide the thermoelectric conversion device with high sensitivity and high detecting performance, and to achieve a high integration thermoelectric conversion device.
PCT/KR2010/003968 2009-06-24 2010-06-18 Thermoelectric conversion device and method for manufacturing same WO2010151012A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090056666 2009-06-24
KR10-2009-0056666 2009-06-24

Publications (2)

Publication Number Publication Date
WO2010151012A2 WO2010151012A2 (en) 2010-12-29
WO2010151012A3 true WO2010151012A3 (en) 2011-04-21

Family

ID=43387015

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/003968 WO2010151012A2 (en) 2009-06-24 2010-06-18 Thermoelectric conversion device and method for manufacturing same

Country Status (2)

Country Link
KR (1) KR20100138774A (en)
WO (1) WO2010151012A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4516625B1 (en) * 2009-08-11 2010-08-04 正幸 安部 Electronic equipment
US10593826B2 (en) * 2018-03-28 2020-03-17 Cambridge Gan Devices Limited Infra-red devices
US11067422B2 (en) 2018-03-28 2021-07-20 Cambridge Gan Devices Limited Thermal fluid flow sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436467A (en) * 1994-01-24 1995-07-25 Elsner; Norbert B. Superlattice quantum well thermoelectric material
JPH1032354A (en) * 1996-07-16 1998-02-03 Honda Motor Co Ltd Thermoelectric material
JP2000244023A (en) * 1999-02-18 2000-09-08 Kansai Research Institute Thermoelectric transfer device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436467A (en) * 1994-01-24 1995-07-25 Elsner; Norbert B. Superlattice quantum well thermoelectric material
JPH1032354A (en) * 1996-07-16 1998-02-03 Honda Motor Co Ltd Thermoelectric material
JP2000244023A (en) * 1999-02-18 2000-09-08 Kansai Research Institute Thermoelectric transfer device

Also Published As

Publication number Publication date
WO2010151012A2 (en) 2010-12-29
KR20100138774A (en) 2010-12-31

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