WO2010150135A2 - Method for treating a semiconductor wafer - Google Patents
Method for treating a semiconductor wafer Download PDFInfo
- Publication number
- WO2010150135A2 WO2010150135A2 PCT/IB2010/052649 IB2010052649W WO2010150135A2 WO 2010150135 A2 WO2010150135 A2 WO 2010150135A2 IB 2010052649 W IB2010052649 W IB 2010052649W WO 2010150135 A2 WO2010150135 A2 WO 2010150135A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- oxide
- layer
- hafnium
- zirconium
- oxy nitride
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 37
- -1 Pr2O3 Inorganic materials 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910000311 lanthanide oxide Inorganic materials 0.000 claims abstract description 17
- 239000007864 aqueous solution Substances 0.000 claims abstract description 11
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910000421 cerium(III) oxide Inorganic materials 0.000 claims abstract 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 20
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 15
- 239000001569 carbon dioxide Substances 0.000 claims description 14
- 229910052735 hafnium Inorganic materials 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 229910006501 ZrSiO Inorganic materials 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
- 229910006252 ZrON Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910007875 ZrAlO Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 235000008790 seltzer Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Definitions
- the invention refers to a method for treating a semiconductor wafer.
- FIG. 1 shows schematic cross-sectional view of a high-k metal gate stack 1 before a method according to an embodiment of the invention is applied.
- a number of layers are deposited in this order:
- an interfacial layer ((silicon oxide or silicon oxynitride)) can be optionally deposited at a thickness of up to 1 nm.
- an interfacial layer ((silicon oxide or silicon oxynitride)) can be optionally deposited at a thickness of up to 1 nm.
- other materials with a dielectric constant k of greater than 10 k>10 can be deposited. Suitable materials are e.g. hafnium silicates, zirconium oxides, hafnium silicon oxy nitrides, zirconium silicates, hafnium aluminates, zirconium aluminates, or combinations thereof.
- lanthanum oxide 30 other cap layer materials can be used such as a lanthanide oxide (such as dysprosium oxide).
- titanium nitride as a metal layer
- tantalum-based materials or other materials can be used.
- polycrystalline silicon other silicon layers can be used such as amorphous silicon.
- silicon nitride as a hard mask silicon oxide can be used.
- a photolithography step is carried out to expose the stack where the stack layers shall be removed in order to expose the bulk silicon.
- the to-be-removed areas are treated with a plasma process wherein boron chloride and argon are supplied to the plasma chamber.
- the silicon nitride layer 60, the polycrystalline silicon layer 50 and the titanium nitride layer 40 are generally removed.
- the lanthanum oxide layer 30 and the high-k layer 20 are modified by the plasma treatment so that modified lanthanum oxide 25 and modified high-k material 35 is generated (see Fig. 1). During the plasma treatment residues are generated.
- the carbon-rich residues 75 (deriving from photo resist) remain on top of the hard mask 60.
- Sidewall residues remain on the sidewall of the etched stack, which are basically metal-enriched residues 45 adhering on the sidewall and silicon-enriched residues 55 adhering on the metal-enriched residues.
- the invention solves the problems by providing a method for treating semiconductor wafer comprising:
- the lanthanum oxide or lanthanide oxide layer is opened in order to expose the underlying material (e.g. a high-k material).
- Such specific areas may be areas where no mask (e.g. photo resist or hard mask) is present.
- Carbonated water also known as soda water
- Al- ternatively carbon dioxide can be added to a water line (preferably DI-water line) at a certain pressure.
- the higher the carbon dioxide partial pressure of the pressurized gas the higher the analytical concentration of the carbon dioxide in the solution will be.
- the analytical concentration of carbon dioxide will be the sum of dissolved carbon dioxide free (dispersed, non-dissolved) carbon dioxide, carbonic acid and hydrogen carbonate.
- This technique utilizing a carbonated water provides the advantage that it is highly selective towards the underlying material even if the underlying material has similar chemical properties.
- This method provides selective etching of lanthanum oxide or lanthanide oxide not only against high-k materials but also against other materials such as TaN and TiN.
- carbonated water is easy to mix, environmentally friendly, and harmless.
- the carbonated water is generated by mixing water with a resistivity (specific electrical resistance) of less than 100 kOhm meter.
- the etch rate is even higher without significantly reducing the selectivity.
- a method wherein the lanthanum oxide or the lanthanide oxide has been deposited on a layer comprising a material (high-k material different from the etched material) selected from a group consisting of hafnium oxide, zirconium oxide, hafnium silicate (HfSiO x ), hafnium aluminate (HfAlO x), hafnium silicon oxy nitride (HfSiON), hafnium aluminium oxy nitride (HfAlON), zirconium silicate (ZrSiO), ZrAlO, zirconium silicon oxy nitride (ZrSiON), zirconium aluminium oxy nitride (ZrAlON), alumina (Al 2 O 3 ), hafnium oxy nitride (HfON), and zirconium oxy nitride (ZrON).
- a material high-k material different from the etched material
- the analytical concentration of carbon dioxide in the aqueous solution is at least 0.1 g/1.
- the pH value of the solution is selected lower than 5.5 more preferably lower than 5, which improves selectivity and etch rate.
- a preferred range for pH- value is between 3.5 and 4.5.
- carbon dioxide is added to water (preferably DI-water with a resistivity of more than 100 kOhm meter) at a partial pressure of at least 1.2 bar (at least 0.2 bar gauge).
- water preferably DI-water with a resistivity of more than 100 kOhm meter
- Fig. 1 shows schematic cross-sectional view of a high-k metal gate stack before a method according to an embodiment of the invention is applied.
- Fig. 2 shows schematic cross-sectional view of a high-k metal gate stack after a method according to an embodiment of the invention has been applied.
- modified layers modified cap-layer 35, modified high-k layer
- stack structure is cleaned from all residues as shown in Fig. 2.
- this invention is described by example of a high-k metal gate nMOS stack it shall be understood that this invention can be used whenever lanthanum oxide and/or a lanthanide oxide shall be etched and/or removed.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201080027554.0A CN102460662B (en) | 2009-06-25 | 2010-06-14 | Method for treating a semiconductor wafer |
SG2011085057A SG176144A1 (en) | 2009-06-25 | 2010-06-14 | Method for treating a semiconductor wafer |
US13/380,294 US8669189B2 (en) | 2009-06-25 | 2010-06-14 | Method for treating a semiconductor wafer |
EP10791716A EP2446465A4 (en) | 2009-06-25 | 2010-06-14 | Method for treating a semiconductor wafer |
JP2012516899A JP2012531735A (en) | 2009-06-25 | 2010-06-14 | Method for processing a semiconductor wafer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT9882009 | 2009-06-25 | ||
ATA988/2009 | 2009-06-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010150135A2 true WO2010150135A2 (en) | 2010-12-29 |
WO2010150135A3 WO2010150135A3 (en) | 2011-05-12 |
Family
ID=43386966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2010/052649 WO2010150135A2 (en) | 2009-06-25 | 2010-06-14 | Method for treating a semiconductor wafer |
Country Status (8)
Country | Link |
---|---|
US (1) | US8669189B2 (en) |
EP (1) | EP2446465A4 (en) |
JP (1) | JP2012531735A (en) |
KR (1) | KR101582709B1 (en) |
CN (1) | CN102460662B (en) |
SG (1) | SG176144A1 (en) |
TW (1) | TWI402907B (en) |
WO (1) | WO2010150135A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8445345B2 (en) * | 2011-09-08 | 2013-05-21 | International Business Machines Corporation | CMOS structure having multiple threshold voltage devices |
SG11201508702TA (en) * | 2013-04-30 | 2015-11-27 | Organo Corp | Cleaning method for exposed copper substrate and cleaning system |
CN113078209B (en) * | 2021-03-24 | 2022-06-21 | 长鑫存储技术有限公司 | Semiconductor structure, manufacturing method thereof and peripheral circuit |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7044143B2 (en) * | 1999-05-14 | 2006-05-16 | Micell Technologies, Inc. | Detergent injection systems and methods for carbon dioxide microelectronic substrate processing systems |
US6958123B2 (en) * | 2001-06-15 | 2005-10-25 | Reflectivity, Inc | Method for removing a sacrificial material with a compressed fluid |
WO2003104900A2 (en) * | 2002-06-07 | 2003-12-18 | Mallinckrodt Baker Inc. | Microelectronic cleaning compositions containing oxidizers and organic solvents |
TWI282814B (en) * | 2002-09-13 | 2007-06-21 | Daikin Ind Ltd | Etchant and etching method |
DE10244862B4 (en) * | 2002-09-23 | 2006-09-14 | IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik | Method for producing an electronic component with a praseodymium oxide layer |
US6696327B1 (en) | 2003-03-18 | 2004-02-24 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric |
US20040188385A1 (en) * | 2003-03-26 | 2004-09-30 | Kenji Yamada | Etching agent composition for thin films having high permittivity and process for etching |
US7250114B2 (en) * | 2003-05-30 | 2007-07-31 | Lam Research Corporation | Methods of finishing quartz glass surfaces and components made by the methods |
KR100583957B1 (en) * | 2003-12-03 | 2006-05-26 | 삼성전자주식회사 | Method of forming a dual damascene metal interconnection employing a sacrificial metal oxide layer |
BRPI0418529A (en) * | 2004-02-11 | 2007-05-15 | Mallinckrodt Baker Inc | microelectronic cleaning compositions containing oxygenated halogen acids, salts and derivatives thereof |
US7820552B2 (en) * | 2007-03-13 | 2010-10-26 | International Business Machines Corporation | Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack |
US8349739B2 (en) * | 2008-08-29 | 2013-01-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conformal etch material and process |
US8183162B2 (en) * | 2008-09-12 | 2012-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a sacrificial layer |
US8163655B2 (en) * | 2008-09-15 | 2012-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a sacrificial sandwich structure |
CN101794071A (en) * | 2008-09-22 | 2010-08-04 | 台湾积体电路制造股份有限公司 | Method for making a semiconductor device |
-
2010
- 2010-06-14 US US13/380,294 patent/US8669189B2/en not_active Expired - Fee Related
- 2010-06-14 SG SG2011085057A patent/SG176144A1/en unknown
- 2010-06-14 EP EP10791716A patent/EP2446465A4/en not_active Withdrawn
- 2010-06-14 CN CN201080027554.0A patent/CN102460662B/en not_active Expired - Fee Related
- 2010-06-14 KR KR1020117030957A patent/KR101582709B1/en not_active IP Right Cessation
- 2010-06-14 JP JP2012516899A patent/JP2012531735A/en active Pending
- 2010-06-14 WO PCT/IB2010/052649 patent/WO2010150135A2/en active Application Filing
- 2010-06-25 TW TW099120841A patent/TWI402907B/en not_active IP Right Cessation
Non-Patent Citations (1)
Title |
---|
See references of EP2446465A4 * |
Also Published As
Publication number | Publication date |
---|---|
TW201118942A (en) | 2011-06-01 |
US20120108074A1 (en) | 2012-05-03 |
EP2446465A4 (en) | 2012-07-25 |
JP2012531735A (en) | 2012-12-10 |
EP2446465A2 (en) | 2012-05-02 |
KR101582709B1 (en) | 2016-01-05 |
CN102460662A (en) | 2012-05-16 |
WO2010150135A3 (en) | 2011-05-12 |
CN102460662B (en) | 2014-09-10 |
KR20120093065A (en) | 2012-08-22 |
SG176144A1 (en) | 2011-12-29 |
TWI402907B (en) | 2013-07-21 |
US8669189B2 (en) | 2014-03-11 |
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